CN102522291B - Plasma display panel and production method thereof - Google Patents
Plasma display panel and production method thereof Download PDFInfo
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- CN102522291B CN102522291B CN201110457864.2A CN201110457864A CN102522291B CN 102522291 B CN102522291 B CN 102522291B CN 201110457864 A CN201110457864 A CN 201110457864A CN 102522291 B CN102522291 B CN 102522291B
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Abstract
The invention provides a plasma display panel and a production method thereof. The plasma display panel comprises a first substrate, a second substrate, an addressing electrode, a first dielectric insulating layer, a bus electrode, a second dielectric insulating layer and a barrier. The first substrate and the second substrate are in opposite and hermetically connected together, the addressing electrode is arranged on one side, facing the first substrate, of the second substrate, the first dielectric insulating layer covers the addressing electrode, the bus electrode is arranged on one side, facing the first substrate, of the first dielectric insulating layer, the second dielectric insulating layer covers the bus electrode, and the barrier is arranged on one side, facing the first substrate, of the second dielectric insulating layer and covered by the first substrate. The plasma display panel needs no production of transparent electrodes and shading electrode structures, and is simple in structure and production method as compared with the plasma display panels in the prior art.
Description
Technical field
The present invention relates to plasma display technology field, in particular to a kind of plasma panel and preparation method thereof.
Background technology
General AC gas discharge display screen adopts surface discharge type structure.As accompanying drawing 1, show the structural representation of a kind of alternating current gas discharge plasma display screen of the prior art, the infrabasal plate 7 ' that this display screen comprises upper substrate 1 ' and seals with it.Upper substrate 1 ' is provided with the secret note 12 ' of transparency electrode (ITO) 2 ' and bus electrode 3 ' and increase contrast; transparency electrode 2 ' and bus electrode 3 ' form sparking electrode; one deck dielectric layer 4 ' is all covered, in dielectric layer 4 ' upper covering one deck medium protective layer 5 ' at upper substrate 1 ' and the surface being positioned at the sparking electrode on upper substrate 1 '.Infrabasal plate 7 ' comprises disposed thereon and vertical with sparking electrode addressing electrode 8 ', cover the dielectric layer 6 ' of addressing electrode 8 ', and it is upper and have the barrier 9 ' of certain altitude to be positioned at dielectric layer 6 ', discharge space separates by barrier 9 ', define the fluorescent material groove 10 ' parallel with addressing electrode 8 ', be coated with phosphor powder layer 11 ' in the bottom of fluorescent material groove 10 '.Be filled with the inert mixed gas such as Ne, Ar, Xe after upper substrate 1 ' and infrabasal plate 7 ' being sealed with glass powder with low melting point, energising afterwards makes electrode discharge.
Summary of the invention
The present invention aims to provide simple plasma panel of a kind of structure and preparation method thereof.
To achieve these goals, according to an aspect of the present invention, provide a kind of plasma panel, comprising: first substrate; Second substrate, relatively arranges with first substrate and seals; Addressing electrode, is arranged on the side of second substrate towards first substrate; First medium insulating barrier, covers on the addressing electrode; Bus electrode, is arranged on the side of first medium insulating barrier towards first substrate; Second medium insulating barrier, covers on bus electrode; And barrier, be arranged on the side of second medium insulating barrier towards first substrate, and covered by first substrate.
Further, addressing electrode and barrier be arranged in parallel, and bus electrode is vertical with addressing electrode to be arranged.
Further, be also provided with protective film on the surface of barrier, be provided with phosphor powder layer in the bottom of protective film.
According to a further aspect in the invention, provide a kind of manufacture method of plasma panel, comprise the following steps: make first substrate; Make second substrate, make addressing electrode on the surface of second substrate side; First medium insulating barrier is formed in addressing electrode surfaces coating; Bus electrode is made on the surface of first medium insulating barrier; Second medium insulating barrier is formed in bus electrode surface-coated; Barrier is made on the surface of second medium insulating barrier; And first substrate is covered on barrier, and seal with second substrate.
Further, after the step making barrier, further comprising the steps of: to form protective film on the surface of barrier.
Further, forming thickness by evaporation is the protective film of 800nm, and the material of protective film is magnesium oxide.
Further, addressing electrode is made by photoetching process.
Further, first medium insulating barrier and second medium insulating barrier are all by the step formation applying slurry, drying and sinter.
Further, before by the step of first substrate and second substrate sealing-in, further comprising the steps of: in the elongate slots that barrier is formed, fill phosphor mixture, phosphor mixture is the mixture of fluorescent material and magnesia crystal.
Further, before by the step of first substrate and second substrate sealing-in, further comprising the steps of: to form sealing frame at the side direction edge of second substrate, by coating, dry and sintering formation sealing frame.
In the inventive solutions, plasma panel comprises: first substrate, second substrate, addressing electrode, first medium insulating barrier, bus electrode, second medium insulating barrier and barrier.Wherein, second substrate and first substrate sealing-in, addressing electrode, first medium insulating barrier, bus electrode, second medium insulating barrier and barrier are all arranged on second substrate, and particularly, addressing electrode is arranged on the side of second substrate towards first substrate; First medium insulating barrier covers on the addressing electrode; Bus electrode is arranged on the side of first medium insulating barrier towards first substrate; Second medium insulating barrier covers on bus electrode; Barrier is arranged on the side of second medium insulating barrier towards first substrate.
Plasma panel of the present invention without the need to preparing transparency electrode and shading electrode structure, simple compared with the plasma panel structure of prior art, the principle of luminosity of plasma panel of the present invention is as follows:
First in address period, in the unit needing luminescence, a weak discharge is carried out by addressing electrode and bus electrode, corresponding Wall charge is accumulated in corresponding discharge cell, then in sweep time, need bus electrode corresponding to luminous unit to discharge, the cumulative function of Wall charge before adding, electric field strength can produce energy level transition thus emissioning light by excited inert gas, vacuum-ultraviolet light excitated fluorescent powder, thus produce three primary colors visible ray.Compared with the luminescence unit of prior art, difference is that addressing and scanning discharge process all carry out at second substrate picture surface.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the structural representation of the plasma panel of prior art;
Fig. 2 shows the structural representation of the embodiment according to plasma panel of the present invention; And
Fig. 3 shows the schematic flow sheet of the embodiment of the manufacture method according to plasma panel of the present invention.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the present invention in detail in conjunction with the embodiments.
As shown in Figure 2, the plasma panel of the present embodiment comprises: first substrate 1, second substrate 2, addressing electrode 3, first medium insulating barrier 4, bus electrode 5, second medium insulating barrier 6 and barrier 7.Second substrate 2 and first substrate 1 are relatively arranged and seal; Addressing electrode 3 is arranged on the side of second substrate 2 towards first substrate 1; First medium insulating barrier 4 covers on addressing electrode 3; Bus electrode 5 is arranged on the side of first medium insulating barrier 4 towards first substrate 1; Second medium insulating barrier 6 covers on bus electrode 5; Barrier 7 is arranged on the side of second medium insulating barrier 6 towards first substrate 1, and is covered by first substrate 1.Addressing electrode 3 and barrier 7 be arranged in parallel, and bus electrode 5 is vertical with addressing electrode 3 to be arranged.
The plasma panel of the present embodiment without the need to preparing transparency electrode and shading electrode structure (being generally secret note), simple compared with the plasma panel structure of prior art, the principle of luminosity of the plasma panel of the present embodiment is as follows:
First in address period, in the unit needing luminescence, a weak discharge is carried out by addressing electrode 3 and bus electrode 5, corresponding Wall charge is accumulated in corresponding discharge cell, then in sweep time, need bus electrode 5 corresponding to luminous unit to discharge, the cumulative function of Wall charge before adding, electric field strength can produce energy level transition thus emissioning light by excited inert gas, vacuum-ultraviolet light excitated fluorescent powder, thus produce three primary colors visible ray.Compared with the luminescence unit of prior art, difference is that addressing and scanning discharge process all carry out at second substrate 2 picture surface.
It should be noted that, because the addressing of the present embodiment is all carried out at second substrate 2 picture surface with scanning discharge process, therefore in corresponding first and second layers of dielectric insulation layer thickness and prior art, first and second layers of dielectric insulation layer thickness will change to some extent, two layer medium also needs the sintering shrinkage ratio matched, simultaneously because discharge process occurs on second substrate surface, in order to improve the reflection of second medium insulating barrier 6 and barrier 7 pairs of visible rays, also protective film is provided with on the surface of barrier 7, preferred use magnesium oxide (MgO), phosphor powder layer is provided with in the bottom of protective film.Protective film carries out evaporation formation after the barrier 7 that completes, and improving addressing response speed accordingly, adding MgO microcrystal grain in fluorescent material to improve secondary electron yield.
As shown in Figure 3, the manufacture method of the plasma panel of the present embodiment, comprises the following steps:
S10: make first substrate 1.
S20: make second substrate 2.
S30: make addressing electrode 3 on the surface of second substrate 2 side.Preferably, addressing electrode 3 is made by photoetching process.
S40: form first medium insulating barrier 4 in addressing electrode 3 surface-coated.Preferably, first medium insulating barrier 4 can be formed by coating slurry, drying and the step sintered.
S50: make bus electrode 5 on the surface of first medium insulating barrier 4.
S60: form second medium insulating barrier 6 in bus electrode 5 surface-coated.Preferably, second medium insulating barrier 6 can be formed by coating slurry, drying and the step sintered.
S70: make barrier 7 on the surface of second medium insulating barrier 6.
S80: first substrate 1 is covered on barrier, and seal with second substrate 2.Preferably, form sealing frame at the side direction edge of second substrate 2, by coating, dry and sintering formation sealing frame, first substrate 1 and second substrate 2 carry out sealing-in by this sealing frame.
Preferably, after the step making barrier 7, further comprising the steps of: to form protective film on the surface of barrier 7.
Manufacture method according to claim 5, forming thickness by evaporation is the protective film of 800nm, and the material of protective film is magnesium oxide.Protective film can improve the reflection of second medium insulating barrier 6 and barrier 7 pairs of visible rays.
Preferably, before by the step of first substrate 1 and second substrate 2 sealing-in, further comprising the steps of: in the elongate slots that barrier 7 is formed, fill phosphor mixture, phosphor mixture is the mixture of fluorescent material and magnesia crystal.Improving addressing response speed to improve secondary electron yield, in fluorescent material, adding MgO microcrystal grain.
Make 50 cun of HD specifications according to the manufacture method of above-mentioned plasma panel of the present invention, resolution is the plasma panel of 1366*768, and concrete steps are as follows:
First make prebasal plate, choose the high ultra-thin glass of transmitance (thickness is at about 1 μm).
Make metacoxal plate again:
First at rear glass substrate photoetching process to make addressing ADD electrode pattern.---drying---exposes---development---sintering---formation addressing ADD electrode with the mask plate with electrode pattern to print addressing electrode Ag slurry on the glass substrate.Wherein addressing electrode will be put corresponding to the barrier slot that fluorescent material is housed.
After ADD electrode fabrication completes, make dielectric insulation layer.At ADD electrode surface coated media insulating barrier slurry,---dry, sintering---forms dielectric insulation layer.
Rear dielectric layer surface prints slurry required for bus electrode, and---drying---exposes---development---sintering---formation bus electrode with the mask plate with electrode pattern.
After bus electrode completes, make dielectric insulation layer.At bus electrode surface-coated dielectric insulation layer slurry,---dry, sintering---forms dielectric insulation layer.
Barrier figure is formed in dielectric insulation layer coating barrier size-drying-sintering-painting PR glue-line-drying-exposure-development-etching,
Form through evaporation protective film (MgO or other composite materials) layer that thickness is 800nm at barrier surface.
In barrier, fill fluorescent material-drying, wherein in fluorescent material, mix diaphragm microcrystal grain (MgO crystal).
Again sealing frame coating-drying-sintering is carried out to infrabasal plate, complete metacoxal plate and make.Wherein sealing frame materials'use is without the low glass powder material of Pb.
Again by involutory sealing-in exhaust, plasma panel structure fabrication completes.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a plasma panel, is characterized in that, comprising:
First substrate (1);
Second substrate (2), relatively arranges with described first substrate (1) and seals;
Addressing electrode (3), is arranged on the side of described second substrate (2) towards described first substrate (1);
First medium insulating barrier (4), covers on described addressing electrode (3);
Bus electrode (5), is arranged on the side of described first medium insulating barrier (4) towards described first substrate (1);
Second medium insulating barrier (6), covers on described bus electrode (5); And
Barrier (7), is arranged on the side of described second medium insulating barrier (6) towards described first substrate (1), and is covered by described first substrate (1).
2. plasma panel according to claim 1, it is characterized in that, described addressing electrode (3) and described barrier (7) be arranged in parallel, and described bus electrode (5) is vertical with described addressing electrode (3) to be arranged.
3. plasma panel according to claim 1, is characterized in that, is also provided with protective film, is provided with phosphor powder layer in the bottom of described protective film on the surface of described barrier (7).
4. a manufacture method for plasma panel, is characterized in that, comprises the following steps:
Make first substrate (1);
Make second substrate (2),
Addressing electrode (3) is made on the surface of described second substrate (2) side;
First medium insulating barrier (4) is formed in described addressing electrode (3) surface-coated;
Bus electrode (5) is made on the surface of described first medium insulating barrier (4);
Second medium insulating barrier (6) is formed in described bus electrode (5) surface-coated;
Barrier (7) is made on the surface of described second medium insulating barrier (6); And
Described first substrate (1) is covered on described barrier (7), and seals with described second substrate (2).
5. manufacture method according to claim 4, is characterized in that, after the step making barrier (7), further comprising the steps of:
Protective film is formed on the surface of described barrier (7).
6. manufacture method according to claim 5, is characterized in that, form by evaporation the described protective film that thickness is 800nm, the material of described protective film is magnesium oxide.
7. manufacture method according to claim 5, is characterized in that, makes described addressing electrode (3) by photoetching process.
8. manufacture method according to claim 5, is characterized in that, described first medium insulating barrier (4) and described second medium insulating barrier (6) are all by the step formation applying slurry, drying and sinter.
9. manufacture method according to claim 5, is characterized in that, before by the step of described first substrate (1) and described second substrate (2) sealing-in, further comprising the steps of:
In the elongate slots that described barrier (7) is formed, fill phosphor mixture, described phosphor mixture is the mixture of fluorescent material and magnesia crystal.
10. manufacture method according to claim 5, is characterized in that, before by the step of described first substrate (1) and described second substrate (2) sealing-in, further comprising the steps of:
Sealing frame is formed, by coating, the dry and described sealing frame of sintering formation at the side direction edge of described second substrate (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110457864.2A CN102522291B (en) | 2011-12-31 | 2011-12-31 | Plasma display panel and production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110457864.2A CN102522291B (en) | 2011-12-31 | 2011-12-31 | Plasma display panel and production method thereof |
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| Publication Number | Publication Date |
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| CN102522291A CN102522291A (en) | 2012-06-27 |
| CN102522291B true CN102522291B (en) | 2015-04-01 |
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| CN201110457864.2A Expired - Fee Related CN102522291B (en) | 2011-12-31 | 2011-12-31 | Plasma display panel and production method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6501447B1 (en) * | 1999-03-16 | 2002-12-31 | Lg Electronics Inc. | Plasma display panel employing radio frequency and method of driving the same |
| CN1799115A (en) * | 2003-06-05 | 2006-07-05 | 松下电器产业株式会社 | Plasma display panel |
| CN1822291A (en) * | 2005-02-16 | 2006-08-23 | 三星Sdi株式会社 | Plasma display panel and method for forming the same |
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2011
- 2011-12-31 CN CN201110457864.2A patent/CN102522291B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6501447B1 (en) * | 1999-03-16 | 2002-12-31 | Lg Electronics Inc. | Plasma display panel employing radio frequency and method of driving the same |
| CN1799115A (en) * | 2003-06-05 | 2006-07-05 | 松下电器产业株式会社 | Plasma display panel |
| CN1822291A (en) * | 2005-02-16 | 2006-08-23 | 三星Sdi株式会社 | Plasma display panel and method for forming the same |
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| CN102522291A (en) | 2012-06-27 |
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