CN102479765A - Packaging structure with semiconductor component - Google Patents
Packaging structure with semiconductor component Download PDFInfo
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- CN102479765A CN102479765A CN2010105715040A CN201010571504A CN102479765A CN 102479765 A CN102479765 A CN 102479765A CN 2010105715040 A CN2010105715040 A CN 2010105715040A CN 201010571504 A CN201010571504 A CN 201010571504A CN 102479765 A CN102479765 A CN 102479765A
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- sidewall
- conduction
- encapsulating structure
- insulating material
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Abstract
The invention discloses a packaging structure with a semiconductor component. The semiconductor component comprises a substrate body, a plurality of conductive columns and a plurality of metal gaskets. The conductive columns are arranged in through holes of the substrate body. The metal gaskets are electrically connected to the conductive columns, and at least one of the metal gaskets is provided with at least one arc-shaped side wall and at least one reference side wall, wherein the curvature of the arc-shaped side wall is different from that of the reference side wall. Therefore, the metal gaskets can be closer to ensure that the conductive columns can also be closer, and thus, more electrifying columns can be arranged in a limited space.
Description
Technical field
The present invention is about a kind of semiconductor subassembly and have the encapsulating structure of semiconductor subassembly, in detail, and about a kind of encapsulating structure that has the semiconductor subassembly of conduction column and have this semiconductor subassembly.
Background technology
Known semiconductor assembly (for example chip or intermediate plate (Interposer)) has several conduction columns (Via) and several metal gaskets (Metal Pad), and these metal gaskets are positioned at these conduction column tops, and electrically connect these conduction columns.Overlooking sight, the area of each metal gasket can be greater than each conduction column area, and the peripheral sidewall of these metal gaskets is circular.Therefore, it is too near that these metal gaskets also can't lean on, and causes the spacing of these conduction columns also can't dwindle effectively.
Summary of the invention
The present invention provides a kind of encapsulating structure with semiconductor subassembly.This encapsulating structure comprises semiconductor assembly, a chip and a primer.This semiconductor subassembly comprises a material main body, several conduction columns (Conductive Vias), an insulating material, one second protective layer and several metal gaskets (Metal Pad).This material main body has a first surface, a second surface and at least one perforation.These conduction columns are positioned at this at least one perforation.This insulating material is between the sidewall of these conduction columns and this at least one perforation.This second protective layer is positioned at this second surface, and has at least one opening, to appear these conduction columns.These metal gaskets are positioned at this at least one opening and are electrically connected to these conduction columns.These metal gaskets comprise at least one first metal gasket, and this first metal gasket has at least one first arcuation sidewall and at least one first with reference to sidewall, and wherein the curvature of this first arcuation sidewall is first different with reference to the curvature of sidewall with this.
This chip is positioned on this semiconductor subassembly, and this chip has several conductor assemblies, to electrically connect these metal gaskets.This primer is between this chip and this semiconductor subassembly, to coat these conductor assemblies.
By this, these metal gaskets can be more near, make these conduction columns can also be more near, thereby, in the confined space, can arrange more conduction column.
Description of drawings
Fig. 1 to Fig. 7 shows the sketch map of technology of the semiconductor subassembly of first embodiment of the invention;
Fig. 8 shows the cross-sectional schematic of the semiconductor subassembly of second embodiment of the invention;
Fig. 9 shows the cross-sectional schematic of the semiconductor subassembly of third embodiment of the invention;
Figure 10 shows the cross-sectional schematic of the semiconductor subassembly of fourth embodiment of the invention;
Figure 11 shows the schematic top plan view of the semiconductor subassembly of fourth embodiment of the invention;
Figure 12 shows the cross-sectional schematic of the semiconductor subassembly of fifth embodiment of the invention;
Figure 13 shows the schematic top plan view of the semiconductor subassembly of fifth embodiment of the invention;
Figure 14 shows the cross-sectional schematic of the semiconductor subassembly of sixth embodiment of the invention;
Figure 15 shows the schematic top plan view of the semiconductor subassembly of sixth embodiment of the invention;
Figure 16 shows the cross-sectional schematic of the semiconductor subassembly of seventh embodiment of the invention;
Figure 17 shows the schematic top plan view of the semiconductor subassembly of seventh embodiment of the invention;
Figure 18 shows the cross-sectional schematic of the semiconductor subassembly of eighth embodiment of the invention;
Figure 19 shows the schematic top plan view of the semiconductor subassembly of eighth embodiment of the invention;
Figure 20 shows the cross-sectional schematic of the semiconductor subassembly of nineth embodiment of the invention;
Figure 21 shows the schematic top plan view of the semiconductor subassembly of nineth embodiment of the invention;
Figure 22 shows the cross-sectional schematic of the semiconductor subassembly of tenth embodiment of the invention;
Figure 23 shows the schematic top plan view of the semiconductor subassembly of tenth embodiment of the invention; And
Figure 24 shows the generalized section of the encapsulating structure with semiconductor subassembly of eleventh embodiment of the invention.
Embodiment
Referring to figs. 1 to Fig. 7, the sketch map of the technology of the semiconductor subassembly of demonstration first embodiment of the invention.With reference to figure 1, a material main body 10 is provided.This material main body 10 comprises a first surface 101, a second surface 102 and several holes 103.In the present embodiment, this material main body 10 is a silicon substrate, and these holes 103 are blind hole, and is opened on this first surface 101.
With reference to figure 2, form an insulating material 11 (for example: pi (Polyimide, PI), epoxy resin (Epoxy), benzocyclobutene (Benzocyclobutene, BCB) etc. non-conductive macromolecule) on the sidewall of these holes 103, and make several central channels.Fill up an electric conducting material 12 (for example copper metal) afterwards again in these central channels.Afterwards, turn over turnback.
With reference to figure 3, removing partly with grinding and/or etching mode, this second surface 102 make these holes 103 become several perforations 104, and these electric conducting materials 12 becomes several conduction columns 13 with this material main body 10 of thinning.
With reference to figure 4, form one second protective layer (Passivation Layer) 14 in this second surface 102.This second protective layer 14 is non-conductive macromolecular material, for example: pi (Polyimide, PI), epoxy resin (Epoxy), benzocyclobutene (Benzocyclobutene, BCB) etc.In the present embodiment; This second protective layer 14 is a photosensitive macromolecular material; For example be that (Benzocyclobutene BCB), and utilizes rotary coating (SpinCoating) or spraying coating (Spray Coating) mode to form this second protective layer 14 to benzocyclobutene.
With reference to figure 5, carry out lithography process, forming at least one opening 141, and appear these conduction columns 13.The size of this opening 141 and position can be defined by employed light shield in the lithography process.
With reference to figure 6, form a metal level on this second protective layer 14 and in this opening 141, to contact these conduction columns 13.Afterwards, carry out etch process, forming several metal gaskets (Metal Pad) 19, and make the semiconductor subassembly 1 of first embodiment of the invention.These metal gaskets 19 do not connect each other mutually, and the size of these metal gaskets 19 and position can be defined by employed light shield in the etch process.Preferably, to overlook sight, the area of each metal gasket 19 can be greater than the area of each conduction column 13.
With reference to figure 7, show the schematic top plan view of the semiconductor subassembly of first embodiment of the invention.These metal gaskets 19 comprise one first metal gasket 16 and several original metal pads 15.The periphery of these original metal pads 15 is a cylindrical sidewalls 151.This first metal gasket 16 has one first arcuation sidewall 161 and one first with reference to sidewall 162, and wherein the curvature of this first arcuation sidewall 161 is first different with reference to the curvature of sidewall 162 with this.
With reference to figure 6 and 7, show the analysing and observe and schematic top plan view of semiconductor subassembly of first embodiment of the invention respectively.This semiconductor subassembly 1 comprises a material main body 10, several conduction columns 13, an insulating material 11, one second protective layer 14 and several metal gaskets 19.
This material main body 10 has a first surface 101, a second surface 102 and at least one perforation 104.In the present embodiment, this material main body 10 is a silicon substrate, and this at least one perforation 104 runs through this material main body 10.These conduction columns 13 are positioned at this at least one perforation 104.In the present embodiment, these conduction columns 13 are solid column.
This insulating material 11 is between the sidewall of these conduction columns 13 and this at least one perforation 104.This second protective layer 14 is positioned at this second surface 102, and has at least one opening 141, to appear these conduction columns 13.These metal gaskets 19 are positioned at this at least one opening 141, and contact and be electrically connected to these conduction columns 13.
In the present embodiment, this material main body 10 has several perforations 104, and each conduction column 13 is positioned at each perforation 104.This second protective layer 14 has several openings 141, and each opening 141 appears each conduction column 13.Each metal gasket 19 is positioned at each opening 141 and is electrically connected to each conduction column 13.These metal gaskets 19 extend on this second protective layer 14.
These metal gaskets 19 comprise one first metal gasket 16 and several original metal pads 15.The periphery of these original metal pads 15 is a cylindrical sidewalls 151.This first metal gasket 16 has at least one first arcuation sidewall 161 and at least one first with reference to sidewall 162, and wherein the curvature of this first arcuation sidewall 161 is first different with reference to the curvature of sidewall 162 with this.Therefore, these original metal pads 15 are a complete circle with what overlook sight, and this first metal gasket 16 is not a complete circle with what overlook sight.Preferably, this is first with reference to the curvature of sidewall 162 curvature less than this first arcuation sidewall 161.In the present embodiment, this first is a flat face with reference to sidewall 162, and its curvature is 0.Perhaps, this first also can be an arcuation with reference to sidewall 162, but its curvature is less than the curvature of this first arcuation sidewall 161.
This first metal gasket 16 has one first extension 163 and one second extension 164; This first extension 163 extends to this first arcuation sidewall 161; This second extension 164 extends to this first with reference to sidewall 162, and the length of this second extension 164 is less than the length of this first extension 163.
With reference to figure 8, show the cross-sectional schematic of the semiconductor subassembly of second embodiment of the invention.The semiconductor subassembly 1 (Fig. 6) of the semiconductor subassembly 2 of present embodiment and first embodiment is roughly the same, and wherein identical assembly is given identical numbering.Present embodiment and first embodiment different be in, the semiconductor subassembly 2 of present embodiment more comprises one first protective layer 28.This first protective layer 28 is identical with this second protective layer 14.This first protective layer 28 is positioned at this first surface 101, and has at least one opening 281, to appear these conduction columns 13.In the present embodiment, partly these metal gaskets 19 (for example metal gasket 29) more are positioned at the opening 281 of this first protective layer 28 and are electrically connected to these conduction columns 13.Be positioned at this first surface 101 these metal gaskets 29 structure and these metal gaskets 19 that are positioned at this second surface 102 symmetrical configuration and equate.
With reference to figure 9, show the cross-sectional schematic of the semiconductor subassembly of third embodiment of the invention.The semiconductor subassembly 1 (Fig. 6) of the semiconductor subassembly 3 of present embodiment and first embodiment is roughly the same, and wherein identical assembly is given identical numbering.Present embodiment and first embodiment different be in, the semiconductor subassembly 3 of present embodiment comprises that more a circuit layer 38 and several connect assembly 39.This circuit layer 38 is positioned at this first surface 101, and is electrically connected to these conduction columns 13.These connect assembly 39 and are positioned on this circuit layer 38.In the present embodiment, each connects assembly 39 and comprises a weld pad 391 and a projection 392.Be noted that and have a rerouting layer by this circuit layer 38 (Redistribution Layer RDL), and can redistribute the position that these connect assembly 39.
With reference to Figure 10 and 11, show the analysing and observe and schematic top plan view of semiconductor subassembly of fourth embodiment of the invention respectively.The semiconductor subassembly 1 (Fig. 6) of the semiconductor subassembly 4 of present embodiment and first embodiment is roughly the same, and wherein identical assembly is given identical numbering.Present embodiment and first embodiment different be in, these conduction columns 43 are the hollow ring column, and this semiconductor subassembly 4 more comprises insulating material 48 in.Should be positioned at these conduction columns 43 by interior insulating material 48.
With reference to Figure 12 and 13, show the analysing and observe and schematic top plan view of semiconductor subassembly of fifth embodiment of the invention respectively.This semiconductor subassembly 5 comprises a material main body 10, several conduction columns 13, an insulating material 11, one second protective layer 14 and several metal gaskets 19.
This material main body 10 has one first perforation 104a and one second perforation 104b.These conduction columns 13 comprise one first conduction column 13a and one second conduction column 13b.This first conduction column 13a is positioned at this first perforation 104a, and this second conduction column 13b is positioned at this second perforation 104b.This insulating material 11 comprises one first insulating material 11a and one second insulating material 11b.This first insulating material 11a is between the sidewall of this first conduction column 13a and this first perforation 104a, and this second insulating material 11b is between the sidewall of this second conduction column 13b and this second perforation 104b.This second protective layer 14 has one first opening 141a and one second opening 141b, and this first opening 141a appears this first conduction column 13a, and this second opening 141b appears this second conduction column 13b.
These metal gaskets 19 comprise one first metal gasket 16 and one second metal gasket 16b.This first metal gasket 16 is positioned at this first opening 141a and is electrically connected to this first conduction column 13a; This first metal gasket 16 has at least one first arcuation sidewall 161 and at least one first with reference to sidewall 162, and the curvature of this first arcuation sidewall 161 is first different with reference to the curvature of sidewall 162 with this.This second metal gasket 16b is positioned at this second opening 141b and is electrically connected to this second conduction column 13b; This second metal gasket 16b has at least one second arcuation sidewall 161b and at least one second with reference to sidewall 162b; The curvature of this second arcuation sidewall 161b is second different with reference to the curvature of sidewall 162b with this, and this first with reference to sidewall 162 in the face of this second with reference to sidewall 162b.
This first conduction column 13a has one first central shaft 18a, and this second conduction column 13b has one second central shaft 18b, and the distance definition of this first central shaft 18a and this second central shaft 18b is one the 3rd spacing P
3, the 3rd spacing P
3Less than this first spacing P
1(Fig. 6), simultaneously also less than this second spacing P
2(Fig. 6), thus this first conduction column 13a and this second conduction column 13b can be more near.
In the present embodiment, this first arcuation sidewall 161 defines one first radius r
1, this second arcuation sidewall 161b defines one second radius r
2, the 3rd spacing P
3Less than this first radius r
1And this second radius r
2Sum.That is:
P
3＜r
1+r
2
With reference to Figure 14 and 15, show the analysing and observe and schematic top plan view of semiconductor subassembly of sixth embodiment of the invention respectively.The semiconductor subassembly 6 of present embodiment and the semiconductor subassembly 5 of the 5th embodiment (Figure 12 and 13) are roughly the same, and wherein identical assembly is given identical numbering.Present embodiment and the 5th embodiment different are in, the structure of this first perforation 104a, this second perforation 104b, this first insulating material 11a and this second insulating material 11b.In the present embodiment, this first perforation 104a and this second perforation 104b are not cylindric, but have an arcuation sidewall and with reference to sidewall.Therefore, this first insulating material 11a has at least one first arcuation sidewall 111a and at least one first with reference to sidewall 112a, this first insulating material 11a first with reference to sidewall 112a to should first metal gasket 16 first with reference to sidewall 162.This second insulating material 11b has at least one second arcuation sidewall 111b and at least one second with reference to sidewall 112b, this second insulating material 11b second with reference to sidewall 112b to should the second metal gasket 16b second with reference to sidewall 162b.
The distance definition of this first central shaft 18a and this second central shaft 18b is one the 4th spacing P
4, the 4th spacing P
4Less than the 3rd spacing P
3(Figure 13), thus this first conduction column 13a and this second conduction column 13b can be more near.
With reference to Figure 16 and 17, show the analysing and observe and schematic top plan view of semiconductor subassembly of seventh embodiment of the invention respectively.The semiconductor subassembly 7 of present embodiment and the semiconductor subassembly 5 of the 5th embodiment (Figure 12 and 13) are roughly the same, and wherein identical assembly is given identical numbering.Present embodiment and the 5th embodiment different be in, this first conduction column 13a and this second conduction column 13b are positioned at same perforation 704.
With reference to Figure 18 and 19, show the analysing and observe and schematic top plan view of semiconductor subassembly of eighth embodiment of the invention respectively.The semiconductor subassembly 8 of present embodiment and the semiconductor subassembly 7 of the 7th embodiment (Figure 16 and 17) are roughly the same, and wherein identical assembly is given identical numbering.Present embodiment and the 7th embodiment different be in, in the 7th embodiment, each opening 141a of this second protective layer 14,141b appears each conduction column 13a, 13b.Yet in the present embodiment, the area of the opening 141c of this second protective layer 14 is greater than these at least two conduction column 13a, and the sectional area sum of 13b is to appear this at least two conduction column 13a, 13b.Preferably, the area of this opening 141c is slightly less than the area of this perforation 704.Therefore, these conduction columns 13a does not have this second protective layer 14 between the 13b.
With reference to Figure 20 and 21, show the analysing and observe and schematic top plan view of semiconductor subassembly of nineth embodiment of the invention respectively.The semiconductor subassembly 1 (Fig. 6) of the semiconductor subassembly 9 of present embodiment and first embodiment is roughly the same, and wherein identical assembly is given identical numbering.Present embodiment and first embodiment different be in, in the present embodiment, these metal gaskets 19 of part (being these metal gaskets 96) have several first arcuation sidewalls 961 and several first with reference to sidewall 962.Therefore these conduction columns 13 can be more near.By this, in the confined space, can arrange more conduction column 13.
With reference to Figure 22 and 23, show the analysing and observe and schematic top plan view of semiconductor subassembly of tenth embodiment of the invention respectively.The semiconductor subassembly 9 (Figure 21) of the semiconductor subassembly 9a of present embodiment and the 9th embodiment is roughly the same, and wherein identical assembly is given identical numbering.Present embodiment and the 9th embodiment different be in, in the present embodiment, these conduction columns 13 are positioned at same perforation 904, and the area of the opening 141d of this second protective layer 14 is greater than the sectional area sum of these a few conduction columns 13, to appear these conduction columns 13.Therefore, these metal gaskets 19 of part (being these metal gaskets 96) are positioned on these conduction columns 13 and this insulating material 11, and do not contact this second protective layer 14.
With reference to Figure 24, show the generalized section of the encapsulating structure with semiconductor subassembly of eleventh embodiment of the invention.This encapsulating structure 9b comprises semiconductor assembly 1, a chip 90 and a primer (Underfill) 92.In the present embodiment, this semiconductor subassembly 1 semiconductor subassembly 1 (Fig. 6) that is first embodiment of the invention.Yet, in other embodiments, the semiconductor subassembly of this semiconductor subassembly 1 replaceable one-tenth the present invention second to ten embodiment.This chip 90 is positioned on this semiconductor subassembly 1.This chip 90 has several conductor assemblies 91 (for example soldered ball), to contact and to electrically connect these metal gaskets 19.This primer 91 is between this chip 90 and this semiconductor subassembly 1, to coat and to protect these conductor assemblies 91.
Only the foregoing description is merely explanation principle of the present invention and effect thereof, but not in order to restriction the present invention.Therefore, practise the foregoing description being made amendment and changing and still do not take off spirit of the present invention in this technological personage.Interest field of the present invention should be listed like claims.
Claims (16)
1. encapsulating structure with semiconductor subassembly comprises:
The semiconductor assembly comprises:
One material main body has a first surface, a second surface and at least one perforation;
Several conduction columns are positioned at this at least one perforation;
One insulating material is between the sidewall of these conduction columns and this at least one perforation;
One second protective layer is positioned at this second surface, and has at least one opening, to appear these conduction columns; And
Several metal gaskets; Be positioned at this at least one opening and be electrically connected to these conduction columns; These metal gaskets comprise at least one first metal gasket; This first metal gasket has at least one first arcuation sidewall and at least one first with reference to sidewall, and wherein the curvature of this first arcuation sidewall is first different with reference to the curvature of sidewall with this;
One chip is positioned on this semiconductor subassembly, and this chip has several conductor assemblies, to electrically connect these metal gaskets; And
One primer is between this chip and this semiconductor subassembly, to coat these conductor assemblies.
2. encapsulating structure as claimed in claim 1, wherein this material main body is a silicon substrate.
3. encapsulating structure as claimed in claim 1, wherein these conduction columns are solid column.
4. encapsulating structure as claimed in claim 1, wherein this material main body has one first perforation and one second perforation, and these conduction columns comprise one first conduction column and one second conduction column; This first conduction column is positioned at this first perforation; This second conduction column is positioned at this second perforation, and this insulating material comprises one first insulating material and one second insulating material, and this first insulating material is between the sidewall of this first conduction column and this first perforation; This second insulating material is between the sidewall of this second conduction column and this second perforation; This second protective layer has one first opening and one second opening, and this first opening appears this first conduction column, and this second opening appears this second conduction column; These metal gaskets more comprise at least one second metal gasket; This first metal gasket is positioned at this first opening and is electrically connected to this first conduction column, and this second metal gasket is positioned at this second opening and is electrically connected to this second conduction column, and this second metal gasket has at least one second arcuation sidewall and at least one second with reference to sidewall; The curvature of this second arcuation sidewall is second different with reference to the curvature of sidewall with this, and this first reference side wall to this second with reference to sidewall.
5. encapsulating structure as claimed in claim 4; Wherein the distance definition between the central shaft of the central shaft of this first conduction column and this second conduction column is a spacing; This first arcuation sidewall defines one first radius; This second arcuation sidewall defines one second radius, and this spacing is less than this first radius and this second radius sum.
6. encapsulating structure as claimed in claim 4; Wherein this first insulating material has at least one first arcuation sidewall and at least one first with reference to sidewall; This first insulating material first with reference to corresponding this first metal gasket of sidewall first with reference to sidewall; This second insulating material has at least one second arcuation sidewall and at least one second with reference to sidewall, this second insulating material second with reference to corresponding this second metal gasket of sidewall second with reference to sidewall.
7. encapsulating structure as claimed in claim 1; Wherein this material main body has several perforations, and each conduction column is positioned at each perforation, and this second protective layer has several openings; Each opening appears each conduction column, and each metal gasket is positioned at each opening and is electrically connected to each conduction column.
8. encapsulating structure as claimed in claim 1, wherein these metal gaskets extend on this second protective layer.
9. encapsulating structure as claimed in claim 1, wherein at least two conduction columns are positioned at a perforation.
10. encapsulating structure as claimed in claim 9, wherein this second protective layer has several openings, and each opening appears each conduction column.
11. encapsulating structure as claimed in claim 9, wherein the area of the opening of this second protective layer is greater than the sectional area sum of these at least two conduction columns, to appear this at least two conduction columns.
12. like the encapsulating structure of claim 11, wherein these metal gaskets of part are positioned on this insulating material, and do not contact this second protective layer.
13. encapsulating structure as claimed in claim 1, wherein these metal gaskets of part have several this first arcuation sidewall and several this first with reference to sidewall.
14. encapsulating structure as claimed in claim 1, wherein this semiconductor subassembly more comprises:
One circuit layer is positioned at this first surface, and is electrically connected to these conduction columns; And
Several connect assembly, are positioned on this circuit layer.
15. encapsulating structure as claimed in claim 1, wherein this first is a flat face with reference to sidewall.
16. encapsulating structure as claimed in claim 1, wherein this semiconductor subassembly more comprises insulating material in, and these conduction columns are the hollow ring column, and insulating material is positioned at these conduction columns in this.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010571504.0A CN102479765B (en) | 2010-11-24 | 2010-11-24 | There is the encapsulating structure of semiconductor subassembly |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010571504.0A CN102479765B (en) | 2010-11-24 | 2010-11-24 | There is the encapsulating structure of semiconductor subassembly |
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| CN102479765A true CN102479765A (en) | 2012-05-30 |
| CN102479765B CN102479765B (en) | 2016-08-24 |
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| US20060138675A1 (en) * | 2003-10-14 | 2006-06-29 | Rinne Glenn A | Solder structures for out of plane connections |
| US7222420B2 (en) * | 2000-07-27 | 2007-05-29 | Fujitsu Limited | Method for making a front and back conductive substrate |
| US20090140436A1 (en) * | 2007-12-04 | 2009-06-04 | Advanced Semiconductor Engineering, Inc. | Method for forming a via in a substrate and substrate with a via |
| CN201466016U (en) * | 2009-03-31 | 2010-05-12 | 精材科技股份有限公司 | Semi-conductor device |
| CN101802990A (en) * | 2007-07-31 | 2010-08-11 | 泰塞拉公司 | Semiconductor packaging process using through silicon vias |
-
2010
- 2010-11-24 CN CN201010571504.0A patent/CN102479765B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7222420B2 (en) * | 2000-07-27 | 2007-05-29 | Fujitsu Limited | Method for making a front and back conductive substrate |
| US20060138675A1 (en) * | 2003-10-14 | 2006-06-29 | Rinne Glenn A | Solder structures for out of plane connections |
| CN101802990A (en) * | 2007-07-31 | 2010-08-11 | 泰塞拉公司 | Semiconductor packaging process using through silicon vias |
| US20090140436A1 (en) * | 2007-12-04 | 2009-06-04 | Advanced Semiconductor Engineering, Inc. | Method for forming a via in a substrate and substrate with a via |
| CN201466016U (en) * | 2009-03-31 | 2010-05-12 | 精材科技股份有限公司 | Semi-conductor device |
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