CN101880880B - Hole punching device for carbon dioxide buffer silicon wafer - Google Patents
Hole punching device for carbon dioxide buffer silicon wafer Download PDFInfo
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- CN101880880B CN101880880B CN2009100835062A CN200910083506A CN101880880B CN 101880880 B CN101880880 B CN 101880880B CN 2009100835062 A CN2009100835062 A CN 2009100835062A CN 200910083506 A CN200910083506 A CN 200910083506A CN 101880880 B CN101880880 B CN 101880880B
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- silicon wafer
- chlorine trifluoride
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Abstract
The invention relates to a hole punching device for a carbon dioxide buffer silicon wafer, which comprises a carbon dioxide flow controller, a chlorine triflouride flow controller, a mixer, a reducing valve, a pressure gage, a vacuum pump, a vacuum chamber, a vacuum chamber pressure gage, a sprayer, a masking plate, a silicon water bracket, a vacuum chamber temperature control device, a backward stage pump and a tail gas treating device. The reducing valve, the vacuum pump, the vacuum chamber pressure gage, the vacuum chamber temperature control device, and the backward stage pump are respectively connected with the vacuum chamber. Carbon dioxide gas enters the mixer through the carbon dioxide flow controller and chlorine triflouride gas enters the mixer through the chlorine triflouride flow controller. Carbon dioxide gas and chlorine triflouride gas are mixed in the mixer and the mixed gas enters the vacuum chamber through the reducing valve and the sprayer in sequence and is masked and adjusted by means of beam convergence by the masking plate to punch holes on the silicon wafer on the silicon wafer bracket. The invention has the advantages of simple device, rapid etching speed, good smoothness of the lateral wall and great selection ratio and realizes hole punching for the silicon wafer.
Description
Technical field
The present invention relates to silicon chip erosion technical field in the semiconductor technology, relate in particular to a kind of hole punching device for carbon dioxide buffer silicon wafer.
Background technology
In the MEMS manufacturing process, the deep erosion processing of silicon is the technology of using always.Traditional dry etching technology is a plasma etching, such as RIE, and ICP.Corrasion realizes by chemistry and physical action.The plasma chemistry etching is isotropic, so the live width control ratio is relatively poor.Though physical etchings is anisotropic, etch rate is also very fast, selects ratio, and the element of being removed by bombardment is nonvolatile, deposits to silicon chip surface easily, causes particle contamination.In addition, the electric charge that is produced by inhomogeneous plasma can cause the inefficacy of susceptible device susceptor on the silicon chip.Plasma etching equipment price costliness, the etching selection ratio, the sidewall slickness is not high, brings device damage easily, is not suitable for semiconductor silicon etching of future generation.
Utilize chlorine trifluoride gas that silicon is lost processing deeply, under no plasma environment, realize.Poor by pilot-gas pressure and background pressure, gas flow, buffer reagent (carbonic acid gas) is regulated etch rate.This etching system etch rate is fast, can reach 40 μ m/min, and is faster than the etch rate of the dark silicon etching machine 25 μ m/min of Pegasus ionic reaction formula of STS company.To the etching selection ratio height of material, wherein the etching selection ratio to photoresist material and silicon can reach 2000: 1.Indented sidewall in the Bosch technology can not appear in sidewall slickness height.
Summary of the invention
(1) technical problem that will solve
Main purpose of the present invention is to provide a kind of hole punching device for carbon dioxide buffer silicon wafer, with realization silicon chip is punched.
(2) technical scheme
For achieving the above object, the invention provides a kind of hole punching device for carbon dioxide buffer silicon wafer, this device comprises CO2 flow controller 1, chlorine trifluoride flow director 2, mixing tank 3, reducing valve 4, tensimeter 5, vacuum pump 6, vacuum chamber 7, vacuum chamber pressure table 8, shower nozzle 9, masking plate 10, silicon chip frame 11, vacuum chamber temperature-control device 12, back level pump 13 and exhaust gas processing device 14, wherein: reducing valve 4, vacuum pump 6, vacuum chamber pressure table 8, vacuum chamber temperature-control device 12 and back level pump 13 are connected to vacuum chamber 7, carbon dioxide enters mixing tank 3 by CO2 flow controller 1, chlorine trifluoride gas enters mixing tank 3 by chlorine trifluoride flow director 2, carbon dioxide and chlorine trifluoride gas mix in mixing tank 3, mixed gas enters vacuum chamber 7 by reducing valve 4 and shower nozzle 9 successively, converge adjusting through sheltering of masking plate 10 then, the silicon chip on the silicon chip frame 11 is punched with line; Vacuum chamber 7 is controlled at temperature under the room temperature environment by vacuum chamber temperature-control device 12, and the intact tail gas of etching is extracted vacuum chamber 7 out by back level pump 13, and enters exhaust gas processing device 14 by back level pump 13.
In the such scheme, described chlorine trifluoride gas is as etching reaction gas, and described carbon dioxide is as buffer reagent.
In the such scheme, 6 pairs of vacuum chambers 7 of described vacuum pump vacuumize, and the pressure in the vacuum chamber 7 is maintained 10
-7Atm is by the pressure in the vacuum chamber pressure table 8 supervision vacuum chamber 7.
In the such scheme, described CO2 flow controller 1 one ends are connected in the steel cylinder of storage carbon dioxide, and an end is connected in mixing tank 3; Described chlorine trifluoride flow director 2 one ends are connected in the steel cylinder of storage chlorine trifluoride gas, and an end is connected in mixing tank 3.
In the such scheme, the mixed gas of described carbonic acid gas and chlorine trifluoride is reduced to 10Pa through reducing valve 4 decompression back pressure, and by tensimeter 5 indicator pressures, this moment, mixture pressure was 1000 with the background pressure ratio.
In the such scheme, the mixed gas of described carbonic acid gas and chlorine trifluoride converges adjusting from shower nozzle 9 ejections through sheltering with line of masking plate 10, gets on the silicon chip frame 11 fixed silicon chips, under the effect of the chemical corrosion of chlorine trifluoride gas, silicon chip is punched.
In the such scheme, described exhaust gas processing device 14 adopts calcium hydroxide or sodium bicarbonate that tail gas is absorbed processing.
(3) beneficial effect
This hole punching device for carbon dioxide buffer silicon wafer provided by the invention, equipment is simple, etch rate is fast, and the sidewall slickness is good, selects than big, overcome apparatus expensive in the traditional plasma etching, the etching selection ratio easily brings the shortcoming of damage to device, has realized silicon chip is punched, improve the exploitation and the development of etching system, can promote the development of the dark silicon etching process of semi-conductor greatly.
Description of drawings
Fig. 1 is the structural representation of hole punching device for carbon dioxide buffer silicon wafer provided by the invention.
Fig. 2 is the structural representation of vacuum chamber in the hole punching device for carbon dioxide buffer silicon wafer provided by the invention.
Wherein: 1 is CO2 flow controller, and 2 is the chlorine trifluoride flow director, and 3 is mixing tank, 4 is reducing valve, and 5 is tensimeter, and 6 is vacuum pump, 7 is vacuum chamber, and 8 is vacuum chamber pressure table, and 9 is shower nozzle, 10 is masking plate, and 11 is the silicon chip frame, and 12 is the vacuum chamber temperature-control device, 13 is back level pump, and 14 is exhaust gas processing device, and 15 is masking layer (photoresist material), 16 is silicon chip, and 17 is chlorine trifluoride gas, and 18 is carbon dioxide and dry ice particle.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
This hole punching device for carbon dioxide buffer silicon wafer provided by the invention adopts chlorine trifluoride as etching reaction gas, and carbonic acid gas plays the dash adjustment effect.Chlorine trifluoride etching silicon chip is to carry out under the environment of no plasma body, and than traditional RIE, ICP etching, this etching system equipment is simple, and etch rate is faster, can beat inclined hole at any angle, and the steep property of sidewall and slickness improve greatly.Carbonic acid gas is regulated the gas circuit gas mixture ratio on the one hand as buffer reagent, improves security; Utilize carbonic acid gas when explosive decompression, to form the characteristics of dry ice easily on the other hand, silicon chip is carried out the physics auxiliary etch, regulate etch rate.
As shown in Figure 1, Fig. 1 is the structural representation of hole punching device for carbon dioxide buffer silicon wafer provided by the invention, this device comprises CO2 flow controller 1, chlorine trifluoride flow director 2, mixing tank 3, reducing valve 4, tensimeter 5, vacuum pump 6, vacuum chamber 7, vacuum chamber pressure table 8, shower nozzle 9, masking plate 10, silicon chip frame 11, vacuum chamber temperature-control device 12, back level pump 13 and exhaust gas processing device 14, wherein: reducing valve 4, vacuum pump 6, vacuum chamber pressure table 8, vacuum chamber temperature-control device 12 and back level pump 13 are connected to vacuum chamber 7, carbon dioxide enters mixing tank 3 by CO2 flow controller 1, chlorine trifluoride gas enters mixing tank 3 by chlorine trifluoride flow director 2, carbon dioxide and chlorine trifluoride gas mix in mixing tank 3, mixed gas enters vacuum chamber 7 by reducing valve 4 and shower nozzle 9 successively, converge adjusting through sheltering of masking plate 10 then, the silicon chip on the silicon chip frame 11 is punched with line; Vacuum chamber 7 is controlled at temperature under the room temperature environment by vacuum chamber temperature-control device 12, and the intact tail gas of etching is extracted vacuum chamber 7 out by back level pump 13, and enters exhaust gas processing device 14 by back level pump 13.
The present invention adopts chlorine trifluoride gas as etching reaction gas, adopts carbon dioxide as buffer reagent.6 pairs of vacuum chambers 7 of vacuum pump vacuumize, and the pressure in the vacuum chamber 7 is maintained 10
-7Atm is by the pressure in the vacuum chamber pressure table 8 supervision vacuum chamber 7.CO2 flow controller 1 one ends are connected in the steel cylinder of storage carbon dioxide, and an end is connected in mixing tank 3; Described chlorine trifluoride flow director 2 one ends are connected in the steel cylinder of storage chlorine trifluoride gas, and an end is connected in mixing tank 3.The mixed gas of carbonic acid gas and chlorine trifluoride is reduced to 10Pa through reducing valve 4 decompression back pressure, and by tensimeter 5 indicator pressures, this moment, mixture pressure was 1000 with the background pressure ratio.The mixed gas of carbonic acid gas and chlorine trifluoride converges adjusting from shower nozzle 9 ejection through sheltering with line of masking plate 10, gets on the silicon chip frame 11 fixed silicon chips, under the effect of the chemical corrosion of chlorine trifluoride gas, silicon chip is punched.Exhaust gas processing device 14 adopts calcium hydroxide or sodium bicarbonate that tail gas is absorbed processing.
Referring again to Fig. 1, the workflow of this device is as follows: at first vacuumize by 6 pairs of vacuum chambers 7 of vacuum pump, make cavity indoor pressure maintain 10
-7Atm is by tensimeter 8 monitor pressures.Open chlorine trifluoride and carbon dioxide steel cylinder,, regulate chlorine trifluoride and carbon dioxide flow and gas mixture ratio by chlorine trifluoride flow director 2 and CO2 flow controller 1.Pass through mixing tank 3, thorough mixing afterwards.Mixed chlorine trifluoride and carbonic acid gas are through reducing valve 4 decompressions, and mixture pressure is reduced to 10Pa, by tensimeter 5 indicator pressures.This moment, mixture pressure was 1000 with the background pressure ratio, when entering chamber through shower nozzle 9, enough big kinetic energy had been arranged.From the mixed gas of shower nozzle 9 ejections, converge adjusting through sheltering of masking plate 10 with line, get on the silicon chip frame 11 fixed silicon chips, under the effect of chlorine trifluoride chemical corrosion and carbonic acid gas physical etchings, the etching silicon chip.Silicon chip frame 11 can be adjusted angle, and the gas of glancing incidence is got on the silicon chip at certain inclination angle, realizes beating inclined hole to silicon chip.Whole vacuum chamber 7 by vacuum chamber temperature-control device 12 with temperature maintenance under room temperature environment.The intact tail gas of etching is extracted vacuum chamber 7 out by back level pump 13, absorbs through exhaust gas processing device 14.
With reference to Fig. 2, Fig. 2 is the structural representation of vacuum chamber in the hole punching device for carbon dioxide buffer silicon wafer provided by the invention, working process in the vacuum chamber is as follows: spray in the vacuum chamber by shower nozzle 9 through post-decompression chlorine trifluoride gas, because its pressure 10Pa and vacuum chamber internal pressure 10
-7The ratio of atm is 1000, and chlorine trifluoride has enough big kinetic energy to get to reaction with it on the silicon chip.Meanwhile, be gaseous phase through a carbonic acid gas part that reduces pressure, a part is a dry ice.Mixed gas at first passes through masking plate 10, and the effect of masking plate 10 is air-flows of having dispersed of sheltering from the shower nozzle ejection, and air-flow is converged.Behind masking plate, mixed gas is got on the silicon chip under photoresist material 15 is sheltered, to its etching.Under pure chlorine trifluoride gas 17 effects, can reach the etch rate of 40 μ m/min.By the adding of buffer reagent carbonic acid gas 18, can regulate etch rate, increase security (chlorine trifluoride is combustion-supporting explosive) simultaneously.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. hole punching device for carbon dioxide buffer silicon wafer, it is characterized in that, this device comprises CO2 flow controller (1), chlorine trifluoride flow director (2), mixing tank (3), reducing valve (4), tensimeter (5), vacuum pump (6), vacuum chamber (7), vacuum chamber pressure table (8), shower nozzle (9), masking plate (10), silicon chip frame (11), vacuum chamber temperature-control device (12), back level pump (13) and exhaust gas processing device (14), wherein: reducing valve (4), vacuum pump (6), vacuum chamber pressure table (8), vacuum chamber temperature-control device (12) and back level pump (13) are connected to vacuum chamber (7), carbon dioxide enters mixing tank (3) by CO2 flow controller (1), chlorine trifluoride gas enters mixing tank (3) by chlorine trifluoride flow director (2), carbon dioxide and chlorine trifluoride gas mix in mixing tank (3), mixed gas enters vacuum chamber (7) by reducing valve (4) and shower nozzle (9) successively, pass through sheltering of masking plate (10) then and converge adjusting, the silicon chip on the silicon chip frame (11) is punched with line; Vacuum chamber (7) is controlled at temperature under the room temperature environment by vacuum chamber temperature-control device (12), and the intact tail gas of etching is extracted vacuum chamber (7) out by back level pump (13), and enters exhaust gas processing device (14) by back level pump (13).
2. hole punching device for carbon dioxide buffer silicon wafer according to claim 1 is characterized in that, described chlorine trifluoride gas is as etching reaction gas, and described carbon dioxide is as buffer reagent.
3. hole punching device for carbon dioxide buffer silicon wafer according to claim 1 is characterized in that, described vacuum pump (6) vacuumizes vacuum chamber (7), and the pressure in the vacuum chamber (7) is maintained 10
-7Atm monitors the pressure that vacuum chamber (7) is interior by vacuum chamber pressure table (8).
4. hole punching device for carbon dioxide buffer silicon wafer according to claim 1 is characterized in that, described CO2 flow controller (1) one end is connected in the steel cylinder of storage carbon dioxide, and an end is connected in mixing tank (3); Described chlorine trifluoride flow director (2) one ends are connected in the steel cylinder of storage chlorine trifluoride gas, and an end is connected in mixing tank (3).
5. hole punching device for carbon dioxide buffer silicon wafer according to claim 1, it is characterized in that, the mixed gas of described carbonic acid gas and chlorine trifluoride is reduced to 10Pa through reducing valve (4) decompression back pressure, and by tensimeter (5) indicator pressure, this moment, mixture pressure was 1000 with the background pressure ratio.
6. hole punching device for carbon dioxide buffer silicon wafer according to claim 1, it is characterized in that, the mixed gas of described carbonic acid gas and chlorine trifluoride sprays from shower nozzle (9), converge adjusting through sheltering of masking plate (10) with line, getting to silicon chip frame (11) goes up on the fixed silicon chip, under the effect of the chemical corrosion of chlorine trifluoride gas, silicon chip is punched.
7. hole punching device for carbon dioxide buffer silicon wafer according to claim 1 is characterized in that, described exhaust gas processing device (14) adopts calcium hydroxide or sodium bicarbonate that tail gas is absorbed processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2009100835062A CN101880880B (en) | 2009-05-06 | 2009-05-06 | Hole punching device for carbon dioxide buffer silicon wafer |
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| CN2009100835062A CN101880880B (en) | 2009-05-06 | 2009-05-06 | Hole punching device for carbon dioxide buffer silicon wafer |
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| CN101880880B true CN101880880B (en) | 2011-07-27 |
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| DE20220316U1 (en) * | 2002-06-28 | 2003-11-06 | Bosch Gmbh Robert | Device for producing chlorine trifluoride for etching semiconductor substrates comprises a plasma reactor, plasma generating units for forming a plasma inside the reactor, and gas feeding for introducing gases into the reactor |
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2009
- 2009-05-06 CN CN2009100835062A patent/CN101880880B/en not_active Expired - Fee Related
Patent Citations (10)
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| US6089183A (en) * | 1992-06-22 | 2000-07-18 | Matsushita Electric Industrial Co., Ltd. | Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate |
| US6290864B1 (en) * | 1999-10-26 | 2001-09-18 | Reflectivity, Inc. | Fluoride gas etching of silicon with improved selectivity |
| DE20220316U1 (en) * | 2002-06-28 | 2003-11-06 | Bosch Gmbh Robert | Device for producing chlorine trifluoride for etching semiconductor substrates comprises a plasma reactor, plasma generating units for forming a plasma inside the reactor, and gas feeding for introducing gases into the reactor |
| CN1565046A (en) * | 2002-07-01 | 2005-01-12 | 财团法人地球环境产业技术研究机构 | CVD device with cleaning mechanism using fluorine gas and method of cleaning CVD device with fluorine gas |
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| CN1726302A (en) * | 2002-11-25 | 2006-01-25 | 应用材料有限公司 | Method of cleaning a coated process chamber component |
| CN101068614A (en) * | 2004-12-03 | 2007-11-07 | Mks仪器股份有限公司 | Methods and apparatus for downstream dissociation of gases |
| CN1993303A (en) * | 2005-05-24 | 2007-07-04 | 松下电器产业株式会社 | Dry etching method, method for forming fine structure, mold and method for producing same |
| WO2009010391A1 (en) * | 2007-07-19 | 2009-01-22 | Robert Bosch Gmbh | Method for etching a layer of a silicon semiconductor substrate |
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