CN101790781A - 集成电路管芯的封装方法 - Google Patents

集成电路管芯的封装方法 Download PDF

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CN101790781A
CN101790781A CN200880104603A CN200880104603A CN101790781A CN 101790781 A CN101790781 A CN 101790781A CN 200880104603 A CN200880104603 A CN 200880104603A CN 200880104603 A CN200880104603 A CN 200880104603A CN 101790781 A CN101790781 A CN 101790781A
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CN101790781B (zh
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W·H·莱特尔
O·R·费伊
许建文
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NXP USA Inc
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Abstract

一种在封装期间保持集成电路管芯(38)的结构(40)，所述结构包括支撑衬底(42)、附接到所述衬底(42)的释放膜(44)、以及膨胀剂(60)。一种封装管芯(38)的方法(34)包括将管芯(38)放置在衬底(42)上，其中管芯的活性表面(52)和接合焊盘(54)与膜(44)接触。在膜(44)的粘合涂层(50)上施加膨胀剂(60)。膨胀剂(60)导致粘合涂层(50)膨胀成与接合焊盘(54)接触和/或形成围绕IC(38)的粘合涂层(50)的嵌条(64)。将管芯(38)包装在模制材料(72)中并从衬底(42)释放作为管芯(38)的面板(74)。粘合涂层(50)围绕接合焊盘(54)的膨胀防止了模制材料(72)渗漏到接合焊盘(54)上。

Description

集成电路管芯的封装方法
技术领域
本发明一般涉及集成电路管芯封装。更具体地，本发明涉及一种防止在集成电路管芯的先芯片封装期间的接合焊盘的污染的方法。
背景技术
集成电路封装是在提供小的高性能半导体器件的工艺中的关键步骤。由此，它对从计算机到蜂窝电话再到嵌入式处理器的终端用户装置的外观和功能具有显著影响。如同在大多数电子装置中那样，趋势是使得半导体器件更小、更强大且成本更低。集成电路(IC)封装已发展经过了多种类型的封装技术，包括例如系统级封装、封装上的封装、先芯片封装等。这些封装技术在高集成度、更多功能、空间和重量节省、以及相当的成本节省方面提供优点。
系统级封装是一种允许若干集成电路放置在一个封装中的技术，在小区域内提供了整套电子装置。封装上的封装将一个封装放置在另一个封装的顶部，来实现更大的集成复杂度和互连密度。系统级封装和封装上的封装技术通常使用引线接合来连接IC管芯和封装。不幸的是，尽管引线接合是有用的封装技术，但是引线占用了有价值的板空间。因而，已开发了倒装芯片技术来消除引线接合。在倒装芯片工艺中，使用球栅阵列或其它导电凸块将IC管芯面朝下连接到板或衬底上。这种技术消除了引线接合，增加了速度且减小了尺寸。
已开发了先芯片封装来解决引线接合和某些球栅阵列技术的局限。一种先芯片封装技术需要将一个或更多IC管芯面朝下安装到可释放的粘合剂，然后将它们包装以形成围绕管芯的伸出面。将所产生的阵列结构从衬底释放，并在IC管芯和伸出面上构建互连电路。作为电路板的处理的整体的一部分，将互连形成到IC管芯，从而消除了引线接合、带自动接合(TAB)或焊料凸块的需求。
图1示出进行现有技术的先芯片封装工艺的IC管芯20的侧视图。在先芯片封装中，通常用模制材料(molding material)来包装由IC管芯20代表的裸IC管芯以在其上构建互连电路之前形成保护性封装。IC管芯20的包装保护其免受可能使其退化的条件的影响，并允许IC管芯20被运输、处置和与其它部件容易地配置。包装还可以使IC管芯20的表面延伸，创建用于IC管芯20上的电路的再分配的平台。这有效地使得芯片布图更大，从而可以将其接合到间距较粗(coarse pitch)的电路板。包装需要将IC管芯20按其活性表面24面朝下的方式附接到粘合剂26上并固定就位。管芯20的活性表面24指的是IC管芯20具有接合焊盘28的一侧。IC管芯20被放置在模具中，用模制材料22(例如填充环氧树脂)包装，然后使模制材料22固化。
不幸的是，粘合剂26的表面30的变化以及机械放置有时会在IC管芯20下留有间隙。这些间隙可以导致IC管芯20下的模制材料22的泄漏，这里称为树脂渗漏。于是该模制材料22可以不期望地涂布接合焊盘28。在固化工艺期间，模制材料22永久附接到接合焊盘28，导致开路并使得IC管芯无用。
已经尝试了多种手段来解决树脂渗漏问题。例如，一些现有技术使用围绕IC管芯的阱、槽或坝(dam)来放置树脂渗漏。另一些技术使用引线框架和模制物(mold feature)、以及高夹紧力来防止树脂渗漏到IC封装的露出的接合焊盘上。还有一些技术使用可以在后期去除的围绕IC管芯的外周的密封环或者覆盖接合焊盘的牺牲层。不幸的是，这些现有技术导致复杂性增加，且需要附加的设计和处理步骤，从而抬高了成本并引发了可靠性问题的可能性。因而，需要一种在进行先芯片封装时有效地防止IC管芯的接合焊盘不受树脂渗漏的影响的方法，该方法可以在既有的封装方法中容易地实施。
附图说明
通过参考在联系附图考虑的情况下的详细描述和权利要求，可以得出本发明的更为完整的理解，在附图中相似的附图标记指代相似条目，其中：
图1示出进行现有技术的先芯片封装工艺的集成电路(IC)管芯的侧视图；
图2示出根据本发明实施例的IC管芯封装工艺的流程图；
图3示出在根据图2的IC管芯封装工艺进行封装的开始阶段的多个IC管芯的一部分的侧视图；
图4示出进一步处理中的图3所示的IC管芯的一部分的侧视图；
图5示出进一步处理中的图4所示的IC管芯的一部分的侧视图；
图6示出进一步处理中的图5所示的IC管芯的一部分的侧视图；
图7示出进一步处理中的图6所示的IC管芯的一部分的侧视图；
图8示出进一步处理中的图7所示的IC管芯的一部分的侧视图；
图9示出由执行图2的IC管芯封装工艺所导致的IC管芯封装的侧视图。
具体实施方式
图2示出根据本发明实施例的集成电路(IC)管芯封装工艺34的流程图。IC管芯封装工艺34描述了一种先芯片封装方法，包括施加选定的溶剂来导致在模制材料的包装和固化期间用于将IC管芯保持到支撑衬底上的粘合剂涂层的膨胀(swelling)。粘合剂的膨胀填充了IC管芯下的间隙和/或围绕IC管芯的周边创建了膨胀的粘合剂的嵌条(fillet)，这防止了模制材料在IC管芯下渗漏。
IC管芯封装工艺34开始于任务36。在任务36，将IC管芯经由释放带(release tape)附接到支撑衬底。参照与任务36关联的图3，图3示出在根据IC封装工艺34的任务36的封装开始阶段的多个IC管芯38的一部分的侧视图。用于在其封装期间临时性保持IC管芯38的结构40通常包括支撑衬底42和附接到支撑衬底42的表面46的释放膜44。在一个实施例中，释放膜44包括层叠或者固定至表面46的聚酰亚胺衬层48。衬层48涂有硅酮聚合物粘合涂层50。在任务36，将单片化的(singulated)IC管芯38放置在支撑衬底42上，其中每个IC管芯38的活性表面52面朝下放置在粘合涂层50上。IC管芯38的活性表面52指的是每个IC管芯38的具有接合焊盘54的一侧。如图所示，粘合涂层50具有不均匀的表面56。不均匀的表面56可以导致接合焊盘54与粘合涂层50之间的间隙。
本发明联系单片化的或单个IC管芯38的封装来讨论。但是，本发明同样适用于多芯片模块的封装，每个模块包括可以执行各种功能的多个单片化的IC管芯。
返回参照图2，在任务36之后，执行任务58。在任务58，将膨胀剂喷到粘合涂层的表面上，并使得膨胀剂蒸发。参照与任务58联系的图4，图4示出进一步处理中的图3所示的IC管芯38的一部分的侧视图。结构40进一步包括膨胀剂60。在一个实施例中，在从传统的喷射设备的喷嘴62雾化喷射膨胀剂60时，膨胀剂60均匀地分布在粘合涂层50和IC管芯38上。
尽管在图4中喷嘴62看上去靠近IC管芯38和粘合涂层50，但是，喷嘴62与IC管芯38之间的距离可以从如同10密耳那样接近一直到远离IC管芯38约20英寸。更具体地，喷嘴62可以远离IC管芯38在4到10英寸之间。膨胀剂60从喷嘴62的喷压可以在0.5-80磅每英寸(psi)，更典型地在0.5-5psi之间。期望相对低的喷压以限制对粘合涂层50的表面56的形貌(即，形状和外貌)的任何喷射诱发的改变。也就是说，高的喷压可能通过例如点蚀(pitting)表面56而改变粘合涂层50的表面56的粗糙度。粘合涂层50的粗糙表面56可以不利地影响包装材料的表面(如下所述)，这进而为随后的包装的IC管芯38的处理造成了问题。
喷嘴62的移动路径可以是静态的，即从上的单喷。或者，喷嘴62的移动路径可以是环形移动或逐行移动，即逐个IC管芯38。应该注意，喷嘴62无需穿过IC管芯38的顶部移动，因为不必定需要喷IC管芯38的顶部。而仅需要喷粘合涂层50。因而，使用可编程喷射工具，喷嘴62可以替代地被放置在IC管芯38顶部下方的IC管芯38之间的间隙中。
喷射持续时间取决于喷嘴62的移动路径。例如，从上的单喷花费的时间的数量级在几秒钟。而逐行移动喷嘴62花费较长的持续时间，例如，对于直径为三百毫米的IC管芯38的面板而言达到十五分钟。如上所述，膨胀剂60以雾化喷射的方式来传输。对于雾化喷射，膨胀剂60的液滴尺寸不应该超过几微米。对于获得粘合涂层50的可再现且一致膨胀而言，膨胀剂60的该雾化喷射是理想的。
现在参照联系IC管芯封装工艺34(图2)的任务58的图5，图5示出进一步处理中的图4所示的IC管芯38的一部分的侧视图。响应于膨胀剂60的施加(图4)，使得粘合涂层50膨胀成与接合焊盘54接触并围绕靠近IC管芯38边缘的活性表面52。膨胀剂60可以膨胀成与接合焊盘54接触以填充接合焊盘54与粘合表面56之间可能存在的间隙。此外，或者替代地，可以围绕每个IC管芯38的周边形成膨胀的粘合涂层50的嵌条64。然后，从粘合表面56和IC管芯38蒸发去除任何剩余的膨胀剂60。
在一个实施例中，膨胀剂60是溶剂，即通常能够溶解固态、液态或气态溶质的液体。但是，溶剂式膨胀剂60的适当选择以及膨胀剂60的适当施加使得硅酮聚合物粘合涂层50在存在溶剂式膨胀剂60的情况下膨胀，而不是被膨胀剂60溶解。溶剂式膨胀剂60的适当选择需要选择具有适当溶解度参数、溶剂极性、沸点等的溶剂。理想地，溶剂式膨胀剂60导致粘合涂层50的适当膨胀量，并且导致粘合表面56的形貌的小变化(除了期望的膨胀之外)。此外，适当的膨胀剂60应该与释放膜44的硅酮聚合物粘合涂层50和衬层48化学反应小或者没有化学反应。
当考虑溶剂溶解度时，用作膨胀剂60的适当溶剂是不溶解粘合涂层50、并且也不会导致粘合涂层50的过量膨胀的溶剂。膨胀的粘合涂层50的嵌条64的高度66理想地在0.5微米-100微米之间，更特别地在2微米-10微米之间。高度66直接受膨胀剂60使粘合涂层50膨胀的特性影响。因此，粘合涂层50的过量膨胀可以导致嵌条64具有大于100微米的高度66。过高的嵌条64可以增加在随后的电介质构建工艺(在以下描述)期间得到空隙的几率。此外，粘合涂层50的过量膨胀可以改变粘合表面56的均匀性，这会改变包装的IC管芯38的形貌，同样导致在随后的电介质构建工艺期间的问题。
溶解度参数是表明特定溶剂的相对溶解能力行为的数值。液体和固体通过分子间力保持在一起。对于要产生的溶液，溶剂分子必须克服溶质中的分子间力并在溶质分子之间以及围绕溶质分子找到其路径。同时，溶剂分子本身彼此由溶质的分子彼此分离。该分子间力称为范德瓦耳斯力(van der waals force)。应用最为广泛的一种溶解度标度被称为希尔德布兰德(Hildebrand)溶解度参数，其反映溶剂的总范德瓦耳斯力。通过实验，希尔德布兰德溶解度参数为18.3(SI单位)的甲苯导致硅酮聚合物粘合涂层50的适当程度的膨胀，而不会显著地改变其形貌(除了期望的膨胀之外)。但是，希尔德布兰德溶解度参数为14.9(SI单位)的己烷导致粘合涂层的太多的膨胀。希尔德布兰德溶解度参数为19.7(SI单位)的丙酮不提供适当的粘合膨胀，相反溶解硅酮聚合物粘合涂层50。
还按照其极性选择膨胀剂60。溶剂可以粗略地划分为极性溶剂和非极性溶剂。溶剂的极性确定其能够溶解何种类型的化合物以及其与哪些其它溶剂或液体化合物可混合。作为经验法则，极性溶剂对极性化合物溶解得最好，而非极性溶剂对非极性化合物溶解得最好。该经验法则有时称为“相似相溶”。极性溶剂可以对硅酮聚合物粘合涂层50和下层的聚酰亚胺衬层48的接合产生吸引。该吸引可以导致粘合涂层50从衬层48分离。极性溶剂还可以导致粘合表面56的形貌的显著改变，这会导致在随后的电介质构建工艺期间的问题。因而，在一个实施例中，膨胀剂60是非极性溶剂(例如甲苯)以防止或限制膨胀剂60与硅酮聚合物粘合涂层50之间的化学反应。
溶剂的另一个重要特性是沸点。溶剂的沸点确定蒸发的速度。理想地，膨胀剂60快速蒸发以不在粘合涂层50上保留残余溶剂。所述残余溶剂会导致在施加包装或模制材料时的问题，如下所述。此外，由于溶剂膨胀剂60的分子重量和尺寸小，膨胀剂60置于粘合涂层50上的时间越长，膨胀剂60到涂层50中的穿透深度越大。这会导致高度66或嵌条64过大。因而，如果在室温下执行溶剂喷射和蒸发工艺，则溶剂膨胀剂60的沸点应该在50-150℃(摄氏度)的范围内以保证快速蒸发。作为实例，甲苯的沸点是110.6℃。应该理解，在低于环境的工艺温度或超过环境的工艺温度的条件下，可以选择具有低于或高于甲苯的沸点的不同溶剂膨胀剂60来获得适当的蒸发速率。
以上将甲苯作为在结合由聚酰亚胺衬层48和硅酮聚合物粘合涂层50构成的释放膜44使用时的适当溶剂膨胀剂60进行讨论。由于甲苯表现出适当的溶解度、其是非极性溶剂、且其沸点适合导致相对快的蒸发，因此其是适当的溶剂。但是，应该理解，尽管溶剂甲苯在此进行描述，但是本领域技术人员将会认识到可以采用导致粘合涂层50的适当程度的膨胀而不溶解它或者不改变涂层50的形貌的其它溶剂。
现在返回参照IC管芯封装工艺34(图2)，在任务58施加膨胀剂60(图4)及其随后蒸发之后，工艺34继续进行任务70。在任务70，用模制材料包装IC管芯38以形成IC管芯38的面板。参照与任务70相联系的图6，图6示出进一步处理中的图5所示的IC管芯38的一部分的侧视图。如进一步所示的，IC管芯38被包装在模制材料72中。一种示例性的模制材料72是填充硅石的环氧树脂模制混合物，但是可以采用其它已知以及即将出现的模制材料72。应该注意，粘合涂层50的嵌条64的存在以及粘合涂层50膨胀成与接合焊盘54接触防止了模制材料72对接合焊盘54的渗漏。一旦包装了IC管芯38，就形成了含多个IC管芯38的面板74。
返回参照图2，在任务70之后，执行任务76。在任务76，使面板74固化。作为实例，固化方式(cure profile)可以需要将面板74暴露于100℃的温度下达60分钟的持续时间，紧接着将面板74暴露于150℃的温度下达另一60分钟的持续时间。本领域技术人员会认识到可以替代地采用其它适合于特定模制材料的固化方式。
接着，执行任务78。在任务78，可以按照传统工艺将面板74背研磨至适当厚度。在替代实施例中，面板74可以被模制成适当厚度，如本领域技术人员所知的。
在任务78之后，在任务80，将面板74从支撑衬底42(图3)释放并可以按照传统工艺将粘合涂层50(图3)从接合焊盘54清除。参照联系任务80的图7，图7示出进一步处理中的图6所示的IC管芯38的一部分的侧视图。在去除支撑衬底42和粘合涂层50之后，在粘合涂层50的嵌条64以前所在的位置处的每个IC管芯38周边的周围留下空隙82。随后可以将IC管芯38的面板74附接到载体84用于进一步处理，如本领域技术人员所知的。
值得重复的是，将嵌条64控制在约0.5-100微米的范围内的高度66(图5)。结果，空隙82的相应高度将与嵌条64的高度66大致相同。如果嵌条64过高，则导致过深的空隙82，在随后的电介质沉积工艺期间会遇到问题。例如，在旋涂工艺期间，过深的空隙82会导致电介质的台阶或者其它表面非均匀特征。此外，过深的空隙82可以导致围绕IC管芯38的模制材料72的量不足以将IC管芯38保持就位。
返回参照图2，在任务80之后，执行任务88。在任务88，对IC管芯38的面板74进行处理以在每个IC管芯38的活性表面52的接合焊盘54之间布线出(route out)信号线、电源线和地线。参照图2和图8，图8示出进一步处理中的图7所示的IC管芯38的一部分的侧视图。可以使用标准硅制造设备进行布线。这些处理步骤可以包括通过电镀技术沉积铜金属化层。金属层一般由通常由旋涂的光可成像(photoimageable)电介质形成的绝缘层分隔，并使用批处理光刻进行图案化。在图8中将金属层与绝缘层的组合总体表示为代表层90。封装中金属层的数目决定于封装尺寸、平栅阵列或球栅阵列间距要求、输入/输出计数、电源和接地要求、以及布线设计规则。金属层将活性表面52上的接合焊盘54连接到在面板74的外表面94上放置的焊盘92。焊盘92于是可以设置有镍-金(NiAu)合金或用于平栅阵列(LGA)的焊料涂层或者用于球栅阵列(BGA)的焊球96。
返回参照图2的IC管芯封装工艺34，在任务88之后，执行任务98。在任务98，将面板74分离成单独的IC管芯封装。在任务98之后，退出IC管芯封装工艺34。
图9示出由执行图2的IC管芯封装工艺34所产生的IC管芯封装100的侧视图。此时，可以按照在准备将其结合到电子装置中的已知工艺来对IC管芯封装100进行处理。
此处描述的一个实施例包括一种封装集成电路(IC)管芯的方法。封装需要先芯片方法，其中围绕裸IC管芯构建封装。在IC管芯包装之前，将IC管芯活性侧朝下放置在粘合涂层上，该粘合涂层将IC管芯固定到支撑衬底上。然后，用非极性溶剂形式的膨胀剂来喷射粘合涂层。膨胀剂导致粘合涂层膨胀成与位于活性表面上的接合焊盘接触和/或形成围绕IC的粘合涂层的嵌条，从而使得在IC管芯包装期间使用的模制材料不渗漏到接合焊盘上。因此，用适当选择的溶剂使粘合涂层膨胀的工艺有效地保护了IC管芯的接合焊盘不会受在进行包装时泄漏的树脂(即模制材料)的影响。在IC芯片的面板化(panelization)期间利用传统的设备实现膨胀剂的简单且成本有效的施加以保护接合焊盘。因此，该方法可以在既有的封装方法中容易地实施。

Claims (20)

1.一种封装集成电路IC管芯的方法，所述IC管芯具有位于其活性表面上的接合焊盘，所述方法包括：
将释放膜附接到支撑衬底上，所述释放膜具有位于所述释放膜的与所述支撑衬底相反的一侧上的粘合涂层；
将所述IC管芯放置在所述支撑衬底上，其中所述活性表面与所述释放膜接触；
在所述粘合涂层上施加膨胀剂；
响应于所述膨胀剂的施加，使得所述粘合涂层膨胀成与所述接合焊盘接触；
将所述IC管芯包装在模制材料中；以及
从所述支撑衬底释放所述IC管芯。
2.如权利要求1所述的方法，还包括选择溶剂作为所述膨胀剂。
3.如权利要求2所述的方法，其中所述选择操作包括选择非极性溶剂作为所述溶剂。
4.如权利要求2所述的方法，还包括从表现出在50-150℃的范围内的沸点温度的溶剂的组中选择所述溶剂。
5.如权利要求1所述的方法，还包括选择甲苯作为所述膨胀剂。
6.如权利要求1所述的方法，还包括选择具有由硅酮聚合物构成的所述粘合涂层的所述释放膜。
7.如权利要求1所述的方法，其中所述施加操作包括将所述膨胀剂均匀地分布到所述粘合涂层上。
8.如权利要求1所述的方法，其中所述施加操作包括将所述膨胀剂以雾化喷射的方式分布到所述粘合涂层上。
9.如权利要求1所述的方法，其中所述施加操作包括在0.5-5psi范围内的压力下将所述膨胀剂喷射到所述粘合涂层上。
10.如权利要求1所述的方法，其中所述使得所述粘合涂层膨胀的操作包括围绕所述IC管芯的周边形成所述粘合涂层的嵌条，所述嵌条表现出在约0.5-100微米范围内的高度。
11.如权利要求1所述的方法，还包括在所述粘合涂层围绕所述IC管芯的至少一个活性表面膨胀时防止所述模制材料流到所述IC管芯的所述接合焊盘上。
12.如权利要求1所述的方法，其中所述IC管芯是多个IC管芯中的一个，所述多个IC管芯中的每一个具有所述活性表面，并且所述方法还包括：
将所述多个IC管芯中的每一个放置在所述支撑衬底上，其中所述活性表面面向所述释放膜；
在所述释放膜的所述粘合涂层上施加所述膨胀剂；
响应于所述膨胀剂的施加，使得所述粘合涂层膨胀成与所述多个IC管芯中的所述每一个的所述活性表面上的所述接合焊盘接触；
在所述施加操作之后，同时将所述多个IC管芯包装在所述模制材料中；
在所述包装操作之后，从所述支撑衬底释放所述多个IC管芯作为面板；以及
分离所述面板的所述多个IC管芯以形成单独的IC封装。
13.一种在封装集成电路IC管芯期间临时保持至少一个IC管芯的结构，所述IC管芯具有位于其活性表面上的接合焊盘，所述结构包括：
支撑衬底；
释放膜，覆盖所述支撑衬底的表面，所述释放膜包括涂有硅酮聚合物粘合涂层的聚酰亚胺衬层，其中所述粘合涂层将所述至少一个IC管芯的所述活性表面临时保持在所述支撑衬底上的期望位置，并且响应于被配置为使得所述粘合涂层膨胀的溶剂的施加，所述粘合涂层膨胀至少包装所述IC管芯的所述活性表面的量，所述溶剂以雾化喷射的方式被均匀分布在所述粘合涂层上以导致所述粘合涂层膨胀成与所述接合焊盘接触并至少包装所述IC管芯的所述活性表面。
14.如权利要求13所述的结构，其中所述溶剂表现出在50-150℃的范围内的沸点温度。
15.如权利要求13所述的结构，其中所述溶剂是非极性溶剂。
16.如权利要求13所述的结构，其中所述溶剂包括甲苯。
17.一种封装集成电路IC管芯的方法，所述IC管芯具有位于其活性表面上的接合焊盘，所述方法包括：
将释放膜附接到支撑衬底上，所述释放膜具有位于所述释放膜的与所述支撑衬底相反的一侧上的粘合涂层；
将所述IC管芯放置在所述支撑衬底上，其中所述活性表面与所述释放膜接触；
通过将膨胀剂以雾化喷射的方式均匀地分布到所述粘合涂层上，在所述粘合涂层上施加所述膨胀剂；
响应于所述膨胀剂的施加，使得所述粘合涂层膨胀成与所述接合焊盘接触；
将所述IC管芯包装在模制材料中，其中在所述粘合涂层围绕所述IC管芯膨胀时，防止所述模制材料流到所述IC管芯的所述接合焊盘上；以及
在包装所述IC管芯之后，从所述支撑衬底释放所述IC管芯。
18.如权利要求17所述的方法，还包括：
采用具有由硅酮聚合物构成的所述粘合涂层的所述释放膜；以及
选择非极性溶剂作为所述膨胀剂。
19.如权利要求17所述的方法，还包括从表现出在50-150℃的范围内的沸点温度的溶剂的组中选择所述溶剂。
20.如权利要求17所述的方法，其中所述使得所述粘合涂层膨胀的操作包括围绕所述IC管芯的周边形成所述粘合涂层的嵌条，所述嵌条表现出在约0.5-100微米范围内的高度。
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