CN101355137B - Phase-changing storage device and manufacture method thereof - Google Patents
Phase-changing storage device and manufacture method thereof Download PDFInfo
- Publication number
- CN101355137B CN101355137B CN2007101369193A CN200710136919A CN101355137B CN 101355137 B CN101355137 B CN 101355137B CN 2007101369193 A CN2007101369193 A CN 2007101369193A CN 200710136919 A CN200710136919 A CN 200710136919A CN 101355137 B CN101355137 B CN 101355137B
- Authority
- CN
- China
- Prior art keywords
- phase
- cup
- layer
- storage device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention provides a phase transition storage device, comprising a substrate, an electrode layer, a phase transition storage structure. The electrode layer is formed on the substrate, the phase transition storage structure is formed on the electrode layer and is electrically connected to the electrode layer, wherein the phase transition storage structure comprises a cup-shaped heating electrode, an insulating layer, an electrode structure and a pair of double-layer clearance walls, wherein the cup-shaped heating electrode is arranged on the electrode layer; the insolating layer is arranged on the cup-shaped heating electrode along the first direction and partly covers on the cup-shaped heating electrode; the electrode structure is arranged on the cup-shaped heating electrode along the second direction, and partly covers on the insolating layer and the cup-shaped heating electrode; the pair of the double-layer clearance walls is arranged on a pair of side walls, and partly covers on the cup-shaped heating electrode; and the double-layer clearance walls comprise a clearance wall made of a phase transition material and a clearance wall made of an insolating material.
Description
Technical field
The present invention relates to a kind of phase-changing storage device, particularly relate to a kind of phase-changing storage device of high storage density.
Background technology
Phase transition storage (phase change memory; PCM) be important candidate's element of 64MB independent (stand-alone) nonvolatile memory of future generation, can how this component structure can produce best element electric heating characteristic will determine phase transition storage replace the important R&D direction that flash memory (flash memory) becomes main flow.Yet how can utilize identical memory semiconductor manufacturing technology to produce the higher nonvolatile memory of memory density is important developing direction.
Shown in Fig. 1 a, three-dimensional phase change memory apparatus (three-dimensional PCM, 3D-PCM) 212 that the patent of American I NTEL company (US 6,501,111) is the main body and is realized with cup type heating electrode (Cup-Shaped Bottom Electrode) 206.The phase-change material 207 and the contact area of bottom electrode have been dwindled into the contact area of glass width of type heating electrode 206 and phase-change material 207, to improve memory density.Yet above-mentioned cubic phase transition storage framework can run into bottleneck when unit memory area microminiaturization, be not suitable for the microspur resolution less than the optical semiconductor carving technology below the 0.1 μ m.Shown in Fig. 1 b; The patent of U.S. STM company (EP 1339111) utilizes the phase-change material plated film to insert in the alleged microchannels (minitrench) 58 of nano-scale contact hole 57 or STM company; Dwindle a phase-change material and glass contact area 58 of type heating electrode 22, to reach the demand that improves memory density.Yet having hole dimension hour fills out very much discontented bottommost or the problem that discontented slit (Seam) occurs filling out when sidewall film top, both sides engages occurs.
Therefore need a kind of phase-changing storage device, to meet the demand that improves memory density.
Summary of the invention
The present invention provides a kind of phase-changing storage device, comprising: substrate; Electrode layer is formed on the aforesaid substrate; Phase change memory structure is formed on the above-mentioned electrode layer, and is electrically connected to above-mentioned electrode layer, and wherein above-mentioned phase change memory structure comprises: cup-shaped heating electrode is arranged on the above-mentioned electrode layer; Insulating barrier is arranged on the above-mentioned cup-shaped heating electrode along first direction, and part covers above-mentioned cup-shaped heating electrode; Electrode structure is arranged on the above-mentioned cup-shaped heating electrode along second direction, and part covers above-mentioned insulating barrier and above-mentioned cup-shaped heating electrode; A pair of double-deck clearance wall is arranged on the pair of sidewalls of above-mentioned electrode structure, and partly covers above-mentioned cup-shaped heating electrode, and above-mentioned double-deck clearance wall comprises the phase-change material clearance wall and is arranged at the insulating material clearance wall on its sidewall.
The present invention provides a kind of manufacturing approach of phase-changing storage device, comprising: substrate is provided, has electrode layer on it; On above-mentioned electrode layer, form phase change memory structure, and be electrically connected to above-mentioned electrode layer, wherein form above-mentioned phase change memory structure and comprise: on above-mentioned electrode layer, form cup-shaped heating electrode; First direction forms insulating barrier in above-mentioned cup-shaped heating electrode upper edge, and part covers above-mentioned cup-shaped heating electrode; Second direction forms electrode structure in above-mentioned cup-shaped heating electrode upper edge, and part covers above-mentioned insulating barrier and above-mentioned cup-shaped heating electrode; On the pair of sidewalls of above-mentioned electrode structure, form a pair of double-deck clearance wall, and partly cover above-mentioned cup-shaped heating electrode, above-mentioned double-deck clearance wall comprises the phase-change material clearance wall and is arranged at the insulating material clearance wall on its sidewall.
The present invention provides a kind of phase-changing storage device, comprising: substrate; Electrode layer is formed on the aforesaid substrate; Dielectric layer is formed on the above-mentioned electrode layer; And phase change memory structure; Be formed in the above-mentioned dielectric layer; And be electrically connected to above-mentioned electrode layer, wherein above-mentioned phase change memory structure comprises: cup-shaped heating electrode is arranged in the cup type opening of above-mentioned dielectric layer; Wherein above-mentioned cup-shaped heating electrode comprises conductive layer, and above-mentioned conductive layer partly covers the sidewall of above-mentioned cup type opening; Electrode structure is arranged on the above-mentioned cup-shaped heating electrode, and part covers above-mentioned cup-shaped heating electrode; A pair of double-deck clearance wall is arranged on the pair of sidewalls of above-mentioned electrode structure, and partly covers above-mentioned cup-shaped heating electrode, and above-mentioned double-deck clearance wall comprises the phase-change material clearance wall and is arranged at the insulating material clearance wall on its sidewall.
The present invention provides a kind of manufacturing approach of phase-changing storage device, comprising: substrate is provided, has electrode layer on it; On this electrode layer, form dielectric layer; And in this dielectric layer, form phase change memory structure; And be electrically connected to this electrode layer; Wherein forming this phase change memory structure comprises: in the cup type opening of this dielectric layer, form cup-shaped heating electrode; Wherein this cup-shaped heating electrode comprises conductive layer, and this conductive layer partly covers the sidewall of this glass type opening; On this cup-shaped heating electrode, form electrode structure, and part covers this cup-shaped heating electrode; And on the pair of sidewalls of this electrode structure, form a pair of double-deck clearance wall, and this cup-shaped heating electrode of part covering, this bilayer clearance wall comprises the phase-change material clearance wall and is arranged at the insulating material clearance wall on its sidewall.
Description of drawings
Fig. 1 a, 1b are existing phase-changing storage device.
Fig. 2 a, 3a, 4a, 5a, 6a, 7a, 8a, 9a, 10a, 11a, 12a, 13a, 14a and 15a are the manufacturing process vertical view of the phase-changing storage device of first embodiment of the invention.
Figure 16 a, 17a, 18a, 19a, 20a, 21a, 22a, 23a, 24a, 25a, 26a and 27a are the manufacturing process vertical view of the phase-changing storage device of second embodiment of the invention.
Fig. 2 b, 3b, 4b, 5b, 6b, 7b, 8b, 9b, 10b, 11b, 12b, 13b, 14b and 15b are respectively along the manufacturing process profile of the A-A ' tangent line of Fig. 2 a, 3a, 4a, 5a, 6a, 7a, 8a, 9a, 10a, 11a, 12a, 13a, 14a and 15a.
Figure 16 b, 17b, 18b, 19b, 20b, 21b, 22b, 23b, 24b, 25b, 26b and 27b are respectively along the manufacturing process profile of the A-A ' tangent line of Figure 16 a, 17a, 18a, 19a, 20a, 21a, 22a, 23a, 24a, 25a, 26a and 27a.
Figure 10 c, 14c and 15c are the manufacturing process profile along the B-B ' tangent line of Figure 10 a, 14a and 15a.
Figure 19 c, 20c, 21c, 22c, 23c and 27c are respectively along the manufacturing process profile of the B-B ' tangent line of Figure 19 a, 20a, 21a, 22a, 23a and 27a.
Figure 15 d is the manufacturing process profile along the C-C ' tangent line of Figure 15 a.
The simple symbol explanation
100a, 100b～phase-changing storage device;
300～substrate;
302～electrode layer;
304～dielectric layer;
308～switch element;
310,310a～hard mask layer;
312,316,354～photoresist layer;
314,356～opening;
318～cup type opening;
320,320a, 320b, 320c, 320d～conductive layer;
322,322a, 322b, 322c, 322d～insulating barrier;
324,324a～cup-shaped heating electrode;
317～first direction;
319～second direction;
326,328,358～insulating barrier;
330～conductive layer;
332～laminated construction;
334～phase-change material layers;
334a～phase-change material clearance wall;
338～sidewall;
340～electrode structure;
350～insulation material layer;
352～insulating material clearance wall;
380～contact area;
400a, 400b～phase change memory structure;
D1～first distance;
D2～second distance;
D3～the 3rd distance;
H1, h2～highly.
Embodiment
Below utilize the manufacturing process profile, illustrate in greater detail the phase-changing storage device and the manufacturing approach thereof of the embodiment of the invention.Fig. 1 a, 1b are existing phase-changing storage device.Fig. 2 a, 3a, 4a, 5a, 6a, 7a, 8a, 9a, 10a, 11a, 12a, 13a, 14a and 15a are the manufacturing process vertical view of the phase-changing storage device of first embodiment of the invention.Figure 16 a, 17a, 18a, 19a, 20a, 21a, 22a, 23a, 24a, 25a, 26a and 27a are the manufacturing process vertical view of the phase-changing storage device of second embodiment of the invention.Fig. 2 b, 3b, 4b, 5b, 6b, 7b, 8b, 9b, 10b, 11b, 12b, 13b, 14b and 15b are respectively along the manufacturing process profile of the A-A ' tangent line of 2a, 3a, 4a, 5a, 6a, 7a, 8a, 9a, 10a, 11a, 12a, 13a, 14a and 15a.Figure 16 b, 17b, 18b, 19b, 20b, 21b, 22b, 23b, 24b, 25b, 26b and 27b are respectively along the manufacturing process profile of the A-A ' tangent line of Figure 16 a, 17a, 18a, 19a, 20a, 21a, 22a, 23a, 24a, 25a, 26a and 27a.Figure 10 c, 14c and 15c are the manufacturing process profile along the B-B ' tangent line of Figure 10 a, 14a and 15a.Figure 19 c, 20c, 21c, 22c, 23c and 27c are respectively along the manufacturing process profile of the B-B ' tangent line of Figure 19 a, 20a, 21a, 22a, 23a and 27a.Figure 15 d is the manufacturing process profile along the C-C ' tangent line of Figure 15 a.In various embodiments of the present invention, identical symbolic representation components identical.
First embodiment
Please refer to Fig. 2 a, it shows the manufacturing process vertical view of the phase-changing storage device of first embodiment of the invention; Please refer to Fig. 2 b, it shows the manufacturing process profile of the phase change memory apparatus of first embodiment of the invention.Substrate 300 is provided, and substrate 300 is a silicon substrate.In other embodiments; SiGe capable of using (SiGe), bulk semiconductor (bulk semiconductor), strain semiconductor (strained semiconductor), compound semiconductor (compound semiconductor), silicon-on-insulator (silicon on insulator, SOI) or other semiconductor substrates commonly used.Substrate 300 also can be comprise have transistor (transistor), diode (diode), two-carrier transistor (bipolar junction transistor, BJT), the substrate of resistance (resistor), electric capacity (capacitor), inductance electronic components such as (inductor).Then; For example physical vaporous deposition capable of using (physical vapor deposition; PVD), sputtering method (sputtering), Low Pressure Chemical Vapor Deposition (low pressure CVD; LPCVD) and the atomic layer chemical vapor deposition method (atomic layerCVD ALD) or electroless plating modes such as (electroless plating), forms electrode layer 302 (can be considered lower electrode layer 302) on substrate 300.Electrode layer 302 can comprise metal, alloy, metallic compound or semi-conducting material.Electrode layer 302 can comprise polysilicon (polysilicon), amorphous silicon (amorphoussilicon), metal nitride or metal silicide.Electrode layer 302 can comprise cobalt (cobalt, Co), tantalum (tantalum, Ta), nickel (nickel; Ni), titanium (titanium; Ti), (tungsten W), tungsten titanium (TiW) or other refractory metals and composition metal, also can comprise for example underlying metal such as aluminium or copper to tungsten.Electrode layer 302 can comprise simple layer or stack layer, for example the simple layer or the stack layer of aluminium (Al) layer, copper/tantalum nitride (Cu/TaN) lamination or other metals.
Then, above first electrode layer 302, form switch element 308.Switch element 308 is selectable (optional) element, and it can comprise diode structure or connecting line (Interconnect) structure.(chemical vapor deposition CVD) waits the thin film deposition mode, above first electrode layer 302, forms p type semiconductor material layer and n type semiconductor material layer successively in chemical vapour deposition (CVD) capable of using.Then, utilize photoetching and etching mode, remove this p type semiconductor material layer of part and this n type semiconductor material layer, above electrode layer 302, forming for example is the switch element 308 of diode structure.In other embodiments, the technology of inserting metal in contact hole capable of using (Contact Hole) or the interlayer hole (Via Hole) forms and for example to be the switch element 308 of connecting line structure.Switch element 308 can be polycrystalline semiconductor material combination layer or the amorphous semiconductor material combination layer that comprises polysilicon (polysilicon) for example or amorphous silicon (amorphous silicon); The semiconductor material layer that is preferably semiconductor material layer and the doped p type impurity of Doped n-type impurity piles up and forms to form p/n diode interface; Wherein n type impurity can comprise phosphorus (P) or arsenic (As), and p type impurity can comprise boron (B) or boron difluoride (BF2).In other embodiments, switch element 308 can comprise metal.
Then, (chemical vapor deposition CVD) waits the thin film deposition mode, above electrode layer 302 and switch element 308, forms dielectric layer 304 in chemical vapour deposition (CVD) capable of using.Dielectric layer 304 can comprise silica (SiO2), silicon nitride (Si3N4) or other dielectric materials.
Please refer to Fig. 3 a and 3b, it shows the formation of hard mask layer 310.The holomorphism precedent is as being the hard mask layer 310 of silicon nitride on dielectric layer 304, and its thickness is preferably 100nm between between the 50nm to 200nm.
As shown in Figs. 4a and 4b, utilize photoresist layer 312 to be covered on the hard mask layer 310, wherein one group of sidewall of the sidewall of photoresist layer 312 and switch element 308 is at a distance of first apart from d1.The thickness of photoresist layer 312 is preferably 500nm between between the 400nm to 600nm.Then, shown in Fig. 5 a and 5b, carry out the anisotropic etching step; Remove the hard mask layer 310 that is not covered by photoresist layer 312; Remove photoresist layer 312 then, to form a plurality of hard mask layer 310a, wherein one group of sidewall of the sidewall of hard mask layer 310a and switch element 308 is also at a distance of first apart from d1; And hard mask layer 310a spacing (spacing) does not each other have the restriction of actual size scope by microspur resolution (CDResolution) the ability control of photoetching technique.
Please refer to Fig. 6 a and 6b, photoetching process capable of using forms a plurality of photoresist layers 316 on hard mask layer 310a, and itself and this hard mask layer 310a is orthogonal.Photoresist layer 316 spacing does not each other have the restriction of actual size scope by microspur resolution (CD Resolution) the ability control of photoetching technique.Another group sidewall of the sidewall of photoresist layer 316 and switch element 308 is at a distance of second distance d2.In first embodiment of the invention, first can equal second distance d2 to form square cup-shaped contact hole apart from d1.First can be not equal to second distance d2 to form the rectangular cup contact hole apart from d1.D1 and d2 also tolerable are negative value to overlook area bigger than contact hole area with the expression switch element.
Then; Shown in Fig. 7 a and 7b, utilize hard mask layer 310a and photoresist layer 316 as the hard mask of etching, carry out the anisotropic etching step; Remove part dielectric layer 304; Up to exposing switch element 308, to form cup-shaped openings 318, its bottom overlay is aimed at (Overlay Alignment) in the top of switch element 308.In embodiments of the present invention, the etching selectivity of hard mask layer 310a and dielectric layer 304 is preferably more than 5.Shown in the vertical view of Fig. 7 a, cup-shaped openings 318 is square.The aperture or the spacing of the cup type opening 318 that is formed by aforesaid way can be determined by the critical size of hard mask layer 310a and photoresist layer 316; Can avoid in existing photoetching process; Only cause the shortcoming of corner slynessization (corner rounding), and can make glass aperture of type opening 318 or spacing be contracted to the limit (for example 65nm) of photoetching process with one photomask step definition cup type opening 318.The pore size of cup type opening 318 is relevant with the thickness of follow-up formation phase-change material clearance wall, and in first embodiment of the invention, the aperture of cup type opening 318 is preferably 480nm between between the 10nm to 500nm.
Please refer to Fig. 8 a and 8b; For example physical vaporous deposition capable of using (physical vapor deposition; PVD), sputtering method (sputtering), Low Pressure Chemical Vapor Deposition (low pressure CVD, LPCVD) with the atomic layer chemical vapor deposition method (atomic layer CVD, ALD) or electroless plating modes such as (electrolessplating); Compliance ground forms conductive layer 320 on the sidewall of the cup-shaped openings shown in Fig. 7 a and 7b 318, and covers switch element 308.Then, on conductive layer 320, form insulating barrier 322, and insert in the cup-shaped openings 318 shown in Fig. 7 a and 7b.Insulating barrier 322 can comprise silica, silicon nitride or its combination.Conductive layer 320 can comprise metal, alloy, metallic compound, semi-conducting material.Conductive layer 320 can comprise underlying metal or its alloy (for example aluminium or copper), refractory metal or its alloy (for example cobalt, tantalum, nickel, titanium, tungsten, tungsten titanium), transition metal nitride, refractory metal nitride (for example cobalt nitride, tantalum nitride, nickel oxide, titanium nitride, tungsten nitride), metal silicide (for example nitrogen cobalt silicide, nitrogen tantalum silicide, nitrogen nickle silicide, nitrogen titanium silicide, nitrogen tungsten silicide), metal silicide (for example cobalt silicide, tantalum silicide, nickle silicide, titanium silicide, tungsten silicide), polycrystalline or amorphous semiconductor material, phase-change material (for example gallium antimonide (GaSb), tellurium germanium (GeTe), Ge-Sb-Te alloy (Ge2Sb2Te5), silver-indium-antimony-tellurium alloy (Ag-In-Sb-Te)), conductive oxide material (for example yttrium barium copper oxide (YBCO), cuprous oxide (Cu2O), tin indium oxide (ITO)) or its combination, and its thickness is preferably between between the 1nm to 300nm.
Then, shown in Fig. 9 a and 9b, (chemical mechanicalpolishing, flatening process CMP) remove excessive conductive layer 320 and insulating barrier 322, to form cup type heating electrode 324 to carry out for example chemico-mechanical polishing.Cup type heating electrode 324 comprises conductive layer 320a and insulating barrier 322a.Cup type heating electrode 324 is electrically connected to electrode layer 302 through switch element 308.Shown in the vertical view of Fig. 9 a, the conductive layer 320a of first embodiment of the invention is a four directions annular (square ring).
Please refer to Figure 10 a, 10b and 10c, it shows the formation of insulating barrier 326.The holomorphism precedent is as being that the insulating barrier of silica, silicon nitride or its combination is on dielectric layer 304 and cup type heating electrode 324.Then, utilize the photoresist (figure does not show) of patterning to cover on the insulating barrier, define the formation position of insulating barrier 326; Carry out the anisotropic etching step again; Remove not by the photoresist dielectric layer covered, remove the photoresist of patterning then, to form insulating barrier 326.In first embodiment of the invention, the etching selectivity of insulating barrier 326 and dielectric layer 304 is preferably more than 1 and less than 1000.Among another embodiment; Insulating barrier 326 induction coupling argon plasma (inductively coupled plasma-Ar capable of using; Mode such as ICP-Ar); Behind the insulating barrier 326 that forms strip, carry out cleaning again, or only comprise the isotropic etch step of dry ecthing or wet etching, have circle (rounded) the edge insulating barrier 326 of (figure does not show) with formation.Insulating barrier 326 is formed on the dielectric layer 304 along first direction 317, and part is covered cover cup type heating electrode 324.In the present embodiment, insulating barrier 326 preferably only covers one of them of two edges that cover cup type heating electrode 324 is parallel to first direction 317, for example covers half area of cover cup type heating electrode 324, and its thickness is preferably 60nm.
Please refer to Figure 11 a and 11b, it shows the formation of laminated construction 332.Form insulating barrier and conductive layer successively on dielectric layer 304 and insulating barrier 326.Above-mentioned insulating barrier can comprise silica, silicon nitride or its combination.Above-mentioned conductive layer can comprise metal, alloy, metallic compound, semi-conducting material.Conductive layer can comprise underlying metal or its alloy (for example aluminium or copper); Refractory metal or its alloy (cobalt for example; Tantalum; Nickel; Titanium; Tungsten; The tungsten titanium); Transition metal nitride; Refractory metal nitride (cobalt nitride for example; Tantalum nitride; Nickel oxide; Titanium nitride; Tungsten nitride); Metal silicide (nitrogen cobalt silicide for example; The nitrogen tantalum silicide; The nitrogen nickle silicide; The nitrogen titanium silicide; The nitrogen tungsten silicide); Metal silicide (cobalt silicide for example; Tantalum silicide; Nickle silicide; Titanium silicide; Tungsten silicide); Polycrystalline or amorphous semiconductor material; Phase-change material (gallium antimonide (GaSb) for example; Tellurium germanium (GeTe); Ge-Sb-Te alloy (Ge2Sb2Te5); Silver-indium-antimony-tellurium alloy (Ag-In-Sb-Te)); Conductive oxide material (yttrium barium copper oxide (YBCO) for example; Cuprous oxide (Cu2O); Tin indium oxide (ITO)) or its combination.Above-mentioned conductive layer can be single layer structure, also can be the random order of aforementioned all material and the lamination layer structure that any repeat layer time number piles up.Then; Utilize the photoresist (figure does not show) of patterning to be covered on the conductive layer; Define the formation position of laminated construction 332, carry out the anisotropic etching step again, remove not by photoresist dielectric layer covered and conductive layer; Remove the photoresist of patterning then, to form laminated construction 332.Laminated construction 332 comprises insulating barrier 328 and conductive layer 330 (can be considered upper electrode layer 330), and it is formed on the dielectric layer 304 along second direction 319, and part is covered cover cup type heating electrode 324 and insulating barrier 326.In the present embodiment, first direction 317 is vertical in fact with second direction 319.Laminated construction 332 preferably only covers one of them of two edges that cover cup type heating electrode 324 is parallel to second direction 319, for example covers 1/4th areas of cover cup type heating electrode 324, and wherein the thickness of insulating barrier 328 and conductive layer 322 is preferably 100nm.
Please refer to Figure 12 a and 12b, it shows the formation of phase-change material layers 334.For example physical vaporous deposition capable of using (physical vapor deposition; PVD), hot vapour deposition method (thermal evaporation), pulsed laser deposition (pulsed laser deposition) or Metalorganic chemical vapor deposition method (metalorganic chemical vapor deposition; Mode such as MOCVD); Cover phase-change material layers 334 (phase change film, PC film) comprehensively.Phase-change material layers 334 can comprise binary, ternary or quaternary chalcogenide (chalcogenide), for example gallium antimonide (GaSb), tellurium germanium (GeTe), Ge-Sb-Te alloy (Ge-Sb-Te, GST), silver-indium-antimony-tellurium alloy (Ag-In-Sb-Te) or its combination.In the present embodiment, the thickness of phase-change material layers 334 is preferably between 10nm to 50nm, if want thick in 100nm because of the phase transition storage demand, then the aperture of the cup type opening 318 shown in Fig. 7 a and 7b must be strengthened again.
Then, shown in Figure 13 a and 13b, for example plasma enhanced chemical vapor deposition method capable of using (plasma enhanced chemical vapor deposition, PECVD), covering insulating material layer 350 on phase-change material layers 334.Insulation material layer 350 can comprise oxide or nitride, and its thickness is between between the 10nm to 50nm.
Then; Shown in Figure 14 a, 14b and 14c; Carry out the anisotropic etching step; Remove SI semi-insulation material layer 350, above the sidewall 338 of laminated construction 332, to form insulating material clearance wall 352, wherein the etching selectivity of phase-change material layers 334 and this insulation material layer 350 is greater than 1 and less than 1000.In another embodiment, the insulation material layer 350 that has on circle (rounded) the edge insulating barrier 326 of (figure does not show) removes after the anisotropic etching step naturally fully.
Then; Shown in Figure 15 a, 15b, 15c and 15d; Utilize insulation material layer clearance wall 352 as the hard mask of etching, carry out the anisotropic etching step, remove SI semi-insulation material clearance wall 352, be not insulated the phase-change material layers 334 that material clearance wall 352 covers and is formed at insulating barrier 326 sidewalls; With formation phase-change material clearance wall 334a, and formation has the electrode structure 340 of the double-deck clearance wall of insulation material layer clearance wall 352 and phase-change material clearance wall 334a.In another embodiment, the phase-change material layers 334 that has on circle (rounded) the edge insulating barrier 326 of (figure does not show) removes after the anisotropic etching step naturally fully.Electrode structure 340 comprises insulating barrier 328, conductive layer 322, insulating material clearance wall 352 and phase-change material clearance wall 334a, to form phase change memory structure 400a.And through above-mentioned technology, to accomplish the phase-changing storage device 100a of this first embodiment.The contact area 380 of phase-change material clearance wall 334a and cup-shaped heating electrode 324 wherein; Can be the area control of the film thickness intersection of phase-change material clearance wall 334a or conductive layer 320a; The area that the heating electrode that utilizes photoetching process to form than prior art produces is littler, controls more accurate.
Above-mentioned phase-changing storage device 100a, the phase-change material clearance wall 334a in the electrode structure 340 is insulated 352 coverings of material layer clearance wall.When forming phase-change material clearance wall 334a,, can protect surface unlikely damage when etching of phase-change material layers 334 at etching phase-change material layers 334 because insulating material clearance wall 352 is covered on the phase-change material layers 334.In the prior art; When the etching phase-change material layers; The etched edge of phase-change material layers has Metal Substrate polymer residues (metal-based polymerresidual), and etching gas can attack the surface of (attack) phase-change material layers, and causes surface damage; Can make the phase-change material layers after the etching can not produce phase transition phenomena when serious, the ammeter that influence phase transition storage shows.And the phase-changing storage device 100a of the embodiment of the invention; Metal Substrate polymer residues (metal-based polymer residual) that forms at phase-change material clearance wall 334a edge in the time of can be with etching and etch damage zone; Utilize insulating material clearance wall 352; Make with the contact area 380 of phase-change material clearance wall 334a and cup-shaped heating electrode 324 and draw back, can improve the characteristic of phase-changing storage device, improve the rate of finished products of technology.
In other embodiments, can be on phase change memory structure 400a dielectric layer (figure shows).Then, carry out for example being the flatening process of chemico-mechanical polishing (CMP), remove excessive dielectric layer, until the surface of the conductive layer that exposes electrode structure 340 330.Then, repeat processing step like Fig. 2 a, 2b to 15a～15d, a plurality of phase change memory structure 400a of vertical stacking, and being electrically connected to each other, forming the memory array of three-dimensional (3D), but the number of plies that phase change memory structure 400a piles up and indefinite.
The main element of the phase-changing storage device 100a of first embodiment of the invention comprises substrate 300; Electrode layer 302 is formed on the substrate 300; Phase change memory structure 400a is formed on the electrode layer 302, and is electrically connected to electrode layer 302.Phase change memory structure 400a comprises: cup-shaped heating electrode 324 is arranged on the electrode layer 302; Insulating barrier 326 is arranged on the cup-shaped heating electrode 324 along first direction 317, and part covers this cup-shaped heating electrode 324; Electrode structure 340 is arranged on the cup-shaped heating electrode 324 along second direction 319, and part covers insulating barrier 326 and cup-shaped heating electrode 324; A pair of double-deck clearance wall is arranged on the pair of sidewalls 338 of electrode structure 340, and partly covers cup-shaped heating electrode 324, and double-deck clearance wall comprises phase-change material clearance wall 334a and is arranged at the insulating material clearance wall 352 on its sidewall.
The phase-changing storage device 100a of first embodiment of the invention has the following advantages: the cup type opening process of (1) embodiment of the invention can make glass aperture of type opening or spacing be contracted to the limit of photoetching process.(2) phase-changing storage device of the embodiment of the invention has the outer double-deck clearance wall that the insulation material layer clearance wall forms that covers, and can protect surface unlikely damage when etching of phase-change material clearance wall.Simultaneously; Metal Substrate polymer residues that forms at phase-change material clearance wall edge during etching and etch damage zone; Insulating material clearance wall capable of using; Make with the contact area of phase-change material clearance wall and cup-shaped heating electrode and draw back, can improve the characteristic of phase-changing storage device, improve the rate of finished products of technology.(3) on unit storage unit (unit memorycell) area a plurality of bits (bits) are arranged, can realize multilevel-cell (multi-level cell, requirement MLC).(4) contact area of phase-change material clearance wall and cup-shaped heating electrode can be by a phase-change material clearance wall and glass area that the film thickness of type heating electrode an intersects control, to realize the minimized effect of contact area.
Second embodiment
Please refer to Figure 16 a and 16b, it shows the formation of cup-shaped openings 318 in the second embodiment of the invention, and wherein the same section shown in element and Fig. 2 a, 2b～6a, the 6b then can not done repeated description at this with reference to the relevant narration of front.Utilize hard mask layer 310a shown in Fig. 6 a, the 6b and photoresist layer 316 as the hard mask of etching, carry out the anisotropic etching step, remove part dielectric layer 304, up to exposing switch element 308.Then, the photoresist of for example photoresist capable of using ashing (photoresist asher) divests (PR stripping) technology, removes photoresist layer 316.Then, dry ecthing capable of using or wet etching mode remove hard mask layer 310a, and to form cup-shaped openings 318, its bottom overlay is aimed at (Overlay Alignment) in the top of switch element 308.In embodiments of the present invention, the etching selectivity of hard mask layer 310a and dielectric layer 304 is preferably more than 5.Shown in the vertical view of Figure 16 a, cup-shaped openings 318 is square.The aperture or the spacing of the cup type opening 318 that is formed by aforesaid way can be determined by the critical size of hard mask layer 310a and photoresist layer 316; Can avoid in existing photoetching process; Only cause the shortcoming of corner slynessization (cornerrounding), and can make glass aperture of type opening 318 or spacing be contracted to the limit (for example 65nm) of photoetching process with one photomask step definition cup type opening 318.The pore size of cup type opening 318 is relevant with the thickness of follow-up formation phase-change material clearance wall, and in embodiments of the present invention, the aperture of cup type opening 318 is preferably 480nm between between the 10nm to 500nm.
Please refer to Figure 17 a and 17b; For example physical vaporous deposition (physical vapordeposition capable of using; PVD), sputtering method (sputtering), Low Pressure Chemical Vapor Deposition (low pressure CVD; LPCVD) and atomic layer chemical vapor deposition method (atomic layer CVD; ALD) or electroless plating modes such as (electroless plating), compliance ground forms conductive layer 320b on dielectric layer 304, and is covered in the sidewall and the switch element 308 of the cup-shaped openings 318 shown in Figure 16 a and 16b.Then, on conductive layer 320b, form insulating barrier 322b, and insert in the cup-shaped openings 318 shown in Figure 16 a and 16b.In second embodiment of the invention, insulating barrier 322b can comprise silica or other oxides.Conductive layer 320b can comprise metal, alloy, metallic compound, semi-conducting material.Conductive layer 320b can comprise underlying metal or its alloy (for example aluminium or copper), refractory metal or its alloy (for example cobalt, tantalum, nickel, titanium, tungsten, tungsten titanium), transition metal nitride, refractory metal nitride (for example cobalt nitride, tantalum nitride, nickel oxide, titanium nitride, tungsten nitride), metal silicide (for example nitrogen cobalt silicide, nitrogen tantalum silicide, nitrogen nickle silicide, nitrogen titanium silicide, nitrogen tungsten silicide), metal silicide (for example cobalt silicide, tantalum silicide, nickle silicide, titanium silicide, tungsten silicide), polycrystalline or amorphous semiconductor material, ((for example gallium antimonide (GaSb), tellurium germanium (GeTe), Ge-Sb-Te alloy (Ge2Sb2Te5), silver-indium-antimony-tellurium alloy (Ag-In-Sb-Te)), conductive oxide material (for example yttrium barium copper oxide (YBCO), cuprous oxide (Cu2O), tin indium oxide (ITO)) or its combination, its thickness is preferably between between the 1nm to 300nm for phase-change material.
Please refer to Figure 18 a and 18b; Utilize the photoresist layer to be covered on the insulating barrier 322b, the same photomask of shared again formation photoresist layer 316, along second direction 319 displacements (offset) the 3rd apart from behind the d3; Again to photoresist layer exposure imaging, to form photoresist layer 354.In second embodiment of the invention, the 3rd apart from d3 between between the 120nm to 200nm, be preferably 140nm.Photoresist layer 354 only covers the part area of the cup-shaped openings 318 shown in Figure 16 a, preferably covers nearly 1/2nd areas of the cup-shaped openings 318 shown in Figure 16 a.
Then, please refer to Figure 19 a, 19b and 19c, utilize anisotropic etching modes such as for example dry ecthing, remove partial insulative layer 322b, to form insulating barrier 322c and opening 356.The height h1 of insulating barrier 322c in the opening 356 preferably is lower than conductive layer 320b.In second embodiment of the invention, the height h1 of insulating barrier 322c be preferably insulating barrier 322c and dielectric layer 304 difference in height h2 1/4th.
Then, utilize the wet etching mode, remove the conductive layer 320b that is not covered by photoresist layer 354, to form the conductive layer 320c shown in Figure 20 a, 20b and 20c, it is covered on the partial sidewall of cup type opening 318 shown in Figure 16 a and 16b.The photoresist of for example photoresist capable of using ashing then, (photoresist asher) divests (PR stripping) technology and removes photoresist layer 354.Shown in Figure 20 b, the conductive layer 320c that is arranged in opening 356 substantially with insulating barrier 322c copline.Shown in Figure 20 c, the conductive layer 320c that is arranged in opening 356 partly is removed.
Please refer to Figure 21 a, 21b and 21c, comprehensive formation insulating barrier 358, and insert in the opening 356.In second embodiment of the invention, insulating barrier 358 can comprise silica or other oxides.
Then, shown in Figure 22 a, 22b and 22c, carry out the flatening process of for example chemico-mechanical polishing (CMP), remove excessive conductive layer 320c, insulating barrier 322c and insulating barrier 358, up to exposing dielectric layer 304, to form cup type heating electrode 324a.Cup type heating electrode 324a comprises conductive layer 320d, insulating barrier 322d and insulating barrier 358b.Cup type heating electrode 324a is electrically connected to electrode layer 302 through switch element 308.Shown in the vertical view of Figure 22 a, the cup type heating electrode 324a of second embodiment of the invention is the U type.
Please refer to Figure 23 a, 23b and 23c, it shows the formation of laminated construction 332.Form insulating barrier and conductive layer successively on dielectric layer 304 and cup type heating electrode 324a.In second embodiment of the invention, above-mentioned insulating barrier comprises silicon nitride or other nitride.Above-mentioned conductive layer can comprise metal, alloy, metallic compound, semi-conducting material.Conductive layer can comprise underlying metal or its alloy (for example aluminium or copper); Refractory metal or its alloy (cobalt for example; Tantalum; Nickel; Titanium; Tungsten; The tungsten titanium); Transition metal nitride; Refractory metal nitride (cobalt nitride for example; Tantalum nitride; Nickel oxide; Titanium nitride; Tungsten nitride); Metal silicide (nitrogen cobalt silicide for example; The nitrogen tantalum silicide; The nitrogen nickle silicide; The nitrogen titanium silicide; The nitrogen tungsten silicide); Metal silicide (cobalt silicide for example; Tantalum silicide; Nickle silicide; Titanium silicide; Tungsten silicide); Polycrystalline or amorphous semiconductor material; Phase-change material (gallium antimonide (GaSb) for example; Tellurium germanium (GeTe); Ge-Sb-Te alloy (Ge2Sb2Te5); Silver-indium-antimony-tellurium alloy (Ag-In-Sb-Te)); Conductive oxide material (yttrium barium copper oxide (YBCO) for example; Cuprous oxide (Cu2O); Tin indium oxide (ITO)) or its combination.Above-mentioned conductive layer can be single layer structure, also can be the random order of aforementioned all material and the lamination layer structure that any repeat layer time number piles up.Then; Utilize the photoresist (figure does not show) of patterning to be covered on the conductive layer; Define the formation position of laminated construction 332, carry out the anisotropic etching step again, remove not by photoresist dielectric layer covered and conductive layer; Remove the photoresist of patterning then, to form laminated construction 332.Laminated construction 332 comprises insulating barrier 328 and conductive layer 330 (can be considered upper electrode layer 330), and it is formed on the dielectric layer 304 along second direction 319, and part is covered cover cup type heating electrode 324a.In second embodiment of the invention, first direction 317 is vertical in fact with second direction 319, and the etching selectivity of insulating barrier 328 and the insulating barrier 322d that is arranged in its following glass of type heating electrode 324a and 358 is preferably greater than 5 and less than 1000.Laminated construction 332 preferably only covers one of them of the two edges that are parallel to second direction 319 of cover cup type heating electrode 324a, for example is covered in glass 1/2nd areas of type heating electrode 324a, and wherein the thickness of insulating barrier 328 and conductive layer 322 is preferably 100nm.
Please refer to Figure 24 a and 24b, it shows the formation of phase-change material layers 334.For example physical vaporous deposition capable of using (physical vapor deposition; PVD), hot vapour deposition method (thermal evaporation), pulsed laser deposition (pulsed laser deposition) or Metalorganic chemical vapor deposition method (metalorganic chemical vapor deposition; Mode such as MOCVD); Cover phase-change material layers 334 (phase change film, PC film) comprehensively.Phase-change material layers 334 can comprise binary, ternary or quaternary chalcogenide (chalcogenide), for example gallium antimonide (GaSb), tellurium germanium (GeTe), Ge-Sb-Te alloy (Ge-Sb-Te, GST), silver-indium-antimony-tellurium alloy (Ag-In-Sb-Te) or its combination.In second embodiment of the invention, the thickness of phase-change material layers 334 is preferably between 10nm to 50nm, if want thick in 100nm because of the phase transition storage demand, then the aperture of the cup type opening 318 shown in Figure 16 a and 16b must be strengthened again.
Then, shown in Figure 25 a and 25b, for example plasma enhanced chemical vapor deposition method capable of using (plasma enhanced chemical vapor deposition, PECVD), covering insulating material layer 350 on phase-change material layers 334.Insulation material layer 350 can comprise oxide layer, and its thickness is between between the 10nm to 50nm.
Then; Shown in Figure 26 a and 26b, carry out the anisotropic etching step, remove SI semi-insulation material layer 350; Above the sidewall 338 of laminated construction 336, to form insulating material clearance wall 352, wherein the etching selectivity of phase-change material layers 334 and this insulation material layer 350 is greater than 1 and less than 1000.
Then; Shown in Figure 27 a, 27b and 27c; Utilize insulation material layer clearance wall 352 as the hard mask of etching, carry out the anisotropic etching step, remove SI semi-insulation material clearance wall 352 and be not insulated the phase-change material layers 334 that material clearance wall 352 covers; With formation phase-change material clearance wall 334a, and formation has the electrode structure 340 of the double-deck clearance wall of insulation material layer clearance wall 352 and phase-change material clearance wall 334a.Electrode structure 340 comprises insulating barrier 328, conductive layer 322, insulating material clearance wall 352 and phase-change material clearance wall 334a, to form phase change memory structure 400b.And through above-mentioned technology, to accomplish the phase-changing storage device 100b of second embodiment of the invention.The contact area 380 of phase-change material clearance wall 334a and cup-shaped heating electrode 324a wherein; Can be the area control of the film thickness intersection of phase-change material clearance wall 334a or conductive layer 320d; The area that the heating electrode that utilizes photoetching process to form than prior art produces is littler, controls more accurate.
Above-mentioned phase change memory apparatus 100b, the phase-change material clearance wall 334a in the electrode structure 340 is insulated 352 coverings of material layer clearance wall.When forming phase-change material clearance wall 334a,, can protect surface unlikely damage when etching of phase-change material layers 334 at etching phase-change material layers 334 because insulating material clearance wall 352 is covered on the phase-change material layers 334.In the prior art; When the etching phase-change material layers; The etched edge of phase-change material layers has Metal Substrate polymer residues (metal-based polymerresidual), and etching gas can attack the surface of (attack) phase-change material layers, and causes surface damage; Can make the phase-change material layers after the etching can not produce phase transition phenomena when serious, the ammeter that influence phase transition storage shows.And the phase-changing storage device 100b of second embodiment of the invention; Metal Substrate polymer residues (metal-based polymer residual) that forms in phase-change material clearance wall 334a edge in the time of can be with etching and etch damage zone; Utilize insulating material clearance wall 352; Make with the contact area 380 of phase-change material clearance wall 334a and cup-shaped heating electrode 324a and draw back, can improve the characteristic of phase-changing storage device, improve the rate of finished products of technology.
In other embodiments, can be on phase change memory structure 400b dielectric layer (figure shows).Then, carry out for example being the flatening process of chemico-mechanical polishing (CMP), remove excessive dielectric layer, until the surface of the conductive layer that exposes electrode structure 340 330.Then, repeat processing step like Figure 16 a, 16b to 27a～27c, a plurality of phase change memory structure 400b of vertical stacking, and being electrically connected to each other, forming the memory array of three-dimensional (3D), but the number of plies that phase change memory structure 400b piles up and indefinite.
The main element of the phase-changing storage device 100b of second embodiment of the invention comprises substrate 300; Electrode layer 302 is formed on the aforesaid substrate 300; Dielectric layer 304 is formed on the above-mentioned electrode layer 302; And phase change memory structure 400b; Be formed in the above-mentioned dielectric layer 304; And be electrically connected to above-mentioned electrode layer 302, wherein above-mentioned phase change memory structure comprises: cup-shaped heating electrode 324a is arranged in the cup type opening 318 of above-mentioned dielectric layer; Wherein above-mentioned cup-shaped heating electrode 324a comprises conductive layer 320d, and above-mentioned conductive layer 320d partly covers the sidewall of above-mentioned cup type opening 318; Electrode structure 340 is arranged on the above-mentioned cup-shaped heating electrode 324a, and part covers above-mentioned cup-shaped heating electrode 324a; A pair of double-deck clearance wall is arranged on the pair of sidewalls 338 of above-mentioned electrode structure 340, and partly covers above-mentioned cup-shaped heating electrode 324a, and above-mentioned double-deck clearance wall comprises phase-change material clearance wall 334a and is arranged at the insulating material clearance wall 352 on its sidewall.
Phase-changing storage device 100a and the 100b of the present invention first and second embodiment use the conductive layer of different mode cover part cup type heating electrodes.The phase-changing storage device 100a of first embodiment, with the conductive layer of the strip insulating barrier 326 cover part cup type heating electrodes that form along first direction 317, and the vertical view of the conductive layer of cup type heating electrode be four directions annular (square ring); And the phase-changing storage device 100b of second embodiment; The same photomask of shared formation photoresist layer 316 with the mode of photomask displacement (offset), removed partial insulative layer 322 and conductive layer 320 again before forming cup type heating electrode 324a; Insert insulating barrier 358 more above that; The conductive layer of cover part cup type heating electrode when accomplishing cup type heating electrode 324a, and can save photomask technology one, and the vertical view of the conductive layer of cup type heating electrode is the U type.
The phase-changing storage device 100b of second embodiment of the invention is except that the advantage of the phase-changing storage device 100a with first embodiment of the invention; Still have the following advantages: (1) is a shared photomask that forms cup type heating electrode during the conductive layer of cup type heating electrode in the cover part, reduce because of technology photomask number increase cause the manufacturing cost that rises.(2) when the insulating barrier of etching laminated construction, can all have etching selectivity, make etching end point be easier to detecting with the insulating barrier inside and outside its following glass of type heating electrode.(3) the insulating barrier edge that can avoid being used for cover part cup type heating electrode conductive layer is controlled not good because of etching condition, and results from the unexpected possibility that forms non-essential phase-change material clearance wall on the insulating barrier.(4) cup type heating electrode upper surface is to form laminated construction under the formation state, and when forming the phase-change material clearance wall after making, the phase-change material clearance wall can not stride across the surface with rolling topography (topography).Advantage is that laminated construction can approach and still can not break, and the phase-change material clearance wall is all the same at the edge of whole piece laminated construction, and electrical property is easy to be consistent.
Though the present invention discloses as above with embodiment; Yet it is not that any those skilled in the art is not breaking away from the spirit and scope of the present invention in order to qualification the present invention; When can making a little change and modification, so protection scope of the present invention is as the criterion with what accompanying claims defined.
Claims (28)
1. phase-changing storage device comprises:
Substrate;
Electrode layer is formed on this substrate;
Dielectric layer is formed on this electrode layer; And
Phase change memory structure is formed in this dielectric layer, and is electrically connected to this electrode layer, and wherein this phase change memory structure comprises:
Cup-shaped heating electrode is arranged in the cup type opening of this dielectric layer, and wherein this cup-shaped heating electrode comprises conductive layer, and this conductive layer partly covers the sidewall of this glass type opening, and wherein the vertical view of this conductive layer is a U-shaped;
Electrode structure is arranged on this cup-shaped heating electrode, and part covers this cup-shaped heating electrode;
A pair of double-deck clearance wall is arranged on the pair of sidewalls of this electrode structure, and this cup-shaped heating electrode of part covering, and this bilayer clearance wall comprises the phase-change material clearance wall and is arranged at the insulating material clearance wall on its sidewall.
2. phase-changing storage device as claimed in claim 1, wherein this cup-shaped heating electrode comprises:
Switch element;
Insulating barrier is arranged on this conductive layer, and inserts in this cup-shaped openings, and part covers this cup-shaped heating electrode.
3. phase-changing storage device as claimed in claim 2, wherein this switch element comprises diode structure or connecting line structure.
4. phase-changing storage device as claimed in claim 2, wherein this conductive layer comprises metal, alloy, metallic compound, semi-conducting material or its combination.
5. phase-changing storage device as claimed in claim 4, wherein this metal comprises aluminium, copper, cobalt, tantalum, nickel, titanium, tungsten or its combination.
6. phase-changing storage device as claimed in claim 4, wherein this alloy comprises aluminium alloy, copper alloy, cobalt alloy, tantalum alloy, nickel alloy, titanium alloy, tungsten alloy, tungsten titanium, gallium antimonide, tellurium germanium, Ge-Sb-Te alloy, silver-indium-antimony-tellurium alloy or its combination.
7. phase-changing storage device as claimed in claim 4, wherein this metallic compound comprises cobalt nitride, tantalum nitride, nickel oxide, titanium nitride, tungsten nitride, nitrogen cobalt silicide, nitrogen tantalum silicide, nitrogen nickle silicide, nitrogen titanium silicide, nitrogen tungsten silicide, cobalt silicide, tantalum silicide, nickle silicide, titanium silicide, tungsten silicide, yttrium barium copper oxide, cuprous oxide, indium tin oxide or its combination.
8. phase-changing storage device as claimed in claim 4, wherein this semi-conducting material comprises polycrystalline semiconductor material, amorphous semiconductor material or its combination.
9. phase-changing storage device as claimed in claim 1, wherein this electrode structure covers 1/2nd areas of this cup-shaped heating electrode.
10. phase-changing storage device as claimed in claim 1, wherein this electrode structure is a composite bed, it comprises insulating barrier and conductive layer.
11. phase-changing storage device as claimed in claim 10, wherein this conductive layer comprises metal, alloy, metallic compound, semi-conducting material or its combination.
12. phase-changing storage device as claimed in claim 11, wherein this metal comprises aluminium, copper, cobalt, tantalum, nickel, titanium, tungsten or its combination.
13. phase-changing storage device as claimed in claim 11, wherein this alloy comprises aluminium alloy, copper alloy, cobalt alloy, tantalum alloy, nickel alloy, titanium alloy, tungsten alloy, tungsten titanium, gallium antimonide, tellurium germanium, Ge-Sb-Te alloy, silver-indium-antimony-tellurium alloy or its combination.
14. phase-changing storage device as claimed in claim 11, wherein this metallic compound comprises cobalt nitride, tantalum nitride, nickel oxide, titanium nitride, tungsten nitride, nitrogen cobalt silicide, nitrogen tantalum silicide, nitrogen nickle silicide, nitrogen titanium silicide, nitrogen tungsten silicide, cobalt silicide, tantalum silicide, nickle silicide, titanium silicide, tungsten silicide, yttrium barium copper oxide, cuprous oxide, indium tin oxide or its combination.
15. phase-changing storage device as claimed in claim 11, wherein this semi-conducting material comprises polycrystalline semiconductor material or amorphous semiconductor material or its combination.
16. phase-changing storage device as claimed in claim 10, wherein this conductive layer is simple layer or stack layer.
17. phase-changing storage device as claimed in claim 1, wherein the etching selectivity of this phase-change material clearance wall and this insulating material clearance wall is greater than 1 and less than 1000.
18. phase-changing storage device as claimed in claim 1 also comprises:
Another phase change memory structure is stacked vertically on this phase change memory structure, and is electrically connected to each other.
19. the manufacturing approach of a phase-changing storage device comprises the following steps:
Substrate is provided, has electrode layer on it;
On this electrode layer, form dielectric layer; And
In this dielectric layer, form phase change memory structure, and be electrically connected to this electrode layer, wherein form this phase change memory structure and comprise:
In the cup type opening of this dielectric layer, form cup-shaped heating electrode, wherein this cup-shaped heating electrode comprises conductive layer, and this conductive layer partly is covered in the sidewall of this glass type opening, and wherein the vertical view of this conductive layer is a U-shaped;
On this cup-shaped heating electrode, form electrode structure, and part covers this cup-shaped heating electrode; And
On the pair of sidewalls of this electrode structure, form a pair of double-deck clearance wall, and this cup-shaped heating electrode of part covering, this bilayer clearance wall comprises the phase-change material clearance wall and is arranged at the insulating material clearance wall on its sidewall.
20. the manufacturing approach of phase-changing storage device as claimed in claim 19 also comprised before forming this cup-shaped heating electrode:
Form switch element on this electrode layer, and be electrically connected to this electrode layer; And
Above this electrode layer and this switch element, form dielectric layer, and cover this switch element.
21. the manufacturing approach of phase-changing storage device as claimed in claim 20, wherein this switch element comprises diode structure or connecting line structure.
22. the manufacturing approach of phase-changing storage device as claimed in claim 20 wherein forms this cup-shaped heating electrode and comprises:
On this dielectric layer, form a plurality of hard mask layers, wherein one of the sidewall of these a plurality of hard mask layers and this switch element group of sidewall is at a distance of first distance;
On these a plurality of hard mask layers, form a plurality of photoresist layers, it is vertical in fact with these a plurality of hard mask layers, and another group sidewall of these a plurality of photoresist layers and this switch element is at a distance of second distance;
Utilize these a plurality of hard mask layers and these a plurality of photoresist layers to be the hard mask of etching, remove this dielectric layer of part up to this switch element, to form cup-shaped openings;
In this cup-shaped openings, form conductive layer, wherein this conductive layer is cup-shaped;
On this conductive layer, insert insulating barrier, and insert in this cup-shaped openings; And
Carry out flatening process, remove this conductive layer of part and this insulating barrier, to form this cup-shaped heating electrode.
23. the manufacturing approach of phase-changing storage device as claimed in claim 22, wherein this first distance equals this second distance.
24. the manufacturing approach of phase-changing storage device as claimed in claim 22, wherein this first distance is not equal to this second distance.
25. the manufacturing approach of phase-changing storage device as claimed in claim 19 wherein forms this electrode structure and comprises:
On this cup-shaped heating electrode, form the laminated construction that comprises insulating barrier and conductive layer;
On this laminated construction, form phase-change material layers and insulation material layer successively;
Remove this insulation material layer of part, above the sidewall of this laminated construction, to form a pair of insulating material clearance wall; And
Utilize this to the insulation material layer clearance wall as the hard mask of etching, remove this phase-change material layers of part, on the sidewall of this laminated construction, to form a pair of phase-change material clearance wall, to form this electrode structure.
26. the manufacturing approach of phase-changing storage device as claimed in claim 22 wherein carries out also comprising before this flatening process:
Carry out photoetching and etch process, part removes this conductive layer and this insulating barrier that is arranged in this cup-shaped openings, to form another opening;
In this another opening, insert another insulating barrier, and be covered on this insulating barrier.
27. the manufacturing approach of phase-changing storage device as claimed in claim 26, the photomask that wherein forms this another opening is for forming the photomask of these a plurality of photoresist layers.
28. the manufacturing approach of phase-changing storage device as claimed in claim 19, wherein this electrode structure is covered in 1/2nd areas of this cup-shaped heating electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101369193A CN101355137B (en) | 2007-07-23 | 2007-07-23 | Phase-changing storage device and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101369193A CN101355137B (en) | 2007-07-23 | 2007-07-23 | Phase-changing storage device and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101355137A CN101355137A (en) | 2009-01-28 |
| CN101355137B true CN101355137B (en) | 2012-07-04 |
Family
ID=40307818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101369193A Active CN101355137B (en) | 2007-07-23 | 2007-07-23 | Phase-changing storage device and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101355137B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI426604B (en) * | 2008-06-03 | 2014-02-11 | Higgs Opl Capital Llc | Phase-change memory devices and methods for fabricating the same |
| US8193522B2 (en) * | 2009-04-09 | 2012-06-05 | Qualcomm Incorporated | Diamond type quad-resistor cells of PRAM |
| CN101997082B (en) * | 2009-08-24 | 2013-01-23 | 旺宏电子股份有限公司 | Self-convergence bottom electrode ring |
| US8198160B2 (en) * | 2010-04-19 | 2012-06-12 | Jun Liu | Vertical transistor phase change memory |
| CN102237488B (en) * | 2010-04-20 | 2013-12-04 | 中国科学院上海微系统与信息技术研究所 | Phase-change random access memory device unit and preparation method thereof |
| CN102122700B (en) * | 2011-01-06 | 2014-11-26 | 上海新储集成电路有限公司 | Double-track phase change memory and preparation method thereof |
| CN103531710B (en) * | 2013-10-22 | 2016-03-16 | 中国科学院上海微系统与信息技术研究所 | A kind of high-speed low-power-consumption phase change memory unit and preparation method thereof |
| CN107482118B (en) * | 2015-07-07 | 2020-04-03 | 江苏时代全芯存储科技股份有限公司 | Method for manufacturing phase change memory |
| KR102375588B1 (en) * | 2017-07-06 | 2022-03-16 | 삼성전자주식회사 | Semiconductor device and method for fabricating the same |
| CN111463345B (en) * | 2020-03-26 | 2022-09-23 | 中国科学院上海微系统与信息技术研究所 | Ta-Ge-Sb-Te phase-change material, preparation method thereof and phase-change memory unit |
| CN112420922B (en) * | 2020-11-20 | 2023-12-19 | 湖北大学 | Low-power consumption CBRAM device based on titanium-silver alloy and preparation method and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6501111B1 (en) * | 2000-06-30 | 2002-12-31 | Intel Corporation | Three-dimensional (3D) programmable device |
| CN1992326A (en) * | 2005-12-30 | 2007-07-04 | 财团法人工业技术研究院 | Semiconductor storage element, phase-change storage element and method for fabrication thereof |
-
2007
- 2007-07-23 CN CN2007101369193A patent/CN101355137B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6501111B1 (en) * | 2000-06-30 | 2002-12-31 | Intel Corporation | Three-dimensional (3D) programmable device |
| CN1992326A (en) * | 2005-12-30 | 2007-07-04 | 财团法人工业技术研究院 | Semiconductor storage element, phase-change storage element and method for fabrication thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101355137A (en) | 2009-01-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101355137B (en) | Phase-changing storage device and manufacture method thereof | |
| US7851253B2 (en) | Phase change memory device and fabricating method | |
| US7057923B2 (en) | Field emission phase change diode memory | |
| US7923286B2 (en) | Method of fabricating a phase-change memory | |
| US10164178B2 (en) | Methods for forming narrow vertical pillars and integrated circuit devices having the same | |
| US9023710B2 (en) | Semiconductor memory device and manufacturing method thereof | |
| US8188569B2 (en) | Phase change random access memory device with transistor, and method for fabricating a memory device | |
| US7989795B2 (en) | Phase change memory device and method for fabricating the same | |
| TW200847399A (en) | Phase change memory device and method of fabricating the same | |
| CN106058044A (en) | High density resistive random access memory (RRAM) | |
| US11043537B2 (en) | Three-dimensional phase change memory device including vertically constricted current paths and methods of manufacturing the same | |
| TWI686931B (en) | Three dimensional memory arrays and methods of forming the same | |
| TWI426604B (en) | Phase-change memory devices and methods for fabricating the same | |
| US11037992B2 (en) | Variable resistance memory device | |
| WO2017044166A1 (en) | Three-dimensional resistive random access memory containing self-aligned memory elements | |
| CN100573951C (en) | Phase change memory apparatus and manufacture method thereof | |
| CN101604728A (en) | Phase-change memorizer device and manufacture method thereof | |
| US10892410B2 (en) | Variable resistance memory devices and methods of manufacturing variable resistance memory devices | |
| CN113594201A (en) | Phase change memory and manufacturing method thereof | |
| CN113299684A (en) | Method for manufacturing memory address line | |
| CN108550696B (en) | Phase change memory | |
| KR101115512B1 (en) | a Phase change memory device and a manufacturing method thereof | |
| US20230189667A1 (en) | Multi-level programming of phase change memory device | |
| CN101330092A (en) | Phase-changing storage device and manufacture method thereof | |
| CN114649366A (en) | Manufacturing method of three-dimensional memory and three-dimensional memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: MAODE SCIENCE AND TECHNOLOGY CO LTD Free format text: FORMER OWNER: FINANCIAL GROUP LEGAL PERSON INDUSTRIAL TECHNOLOGY INST. Effective date: 20100514 |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 000000 HSINCHU COUNTY, TAIWAN PROVINCE, CHINA TO: HSINCHU SCIENCE INDUSTRIAL PARK, TAIWAN PROVINCE, CHINA |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20100514 Address after: Hsinchu Science Industrial Park, Taiwan, China Applicant after: Maode Science and Technology Co., Ltd. Co-applicant after: Huabang Electronics Co., Ltd. Address before: 000000 Hsinchu County, Taiwan, China Applicant before: Industrial Technology Research Institute Co-applicant before: Powerchip Semiconductor Corp. Co-applicant before: Nanya Sci. & Tech. Co., Ltd. Co-applicant before: Maode Science and Technology Co., Ltd. Co-applicant before: Huabang Electronics Co., Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |