CN101354922B - Voltage supply circuit and flash memory device including the same, and method of supplying operating voltage - Google Patents
Voltage supply circuit and flash memory device including the same, and method of supplying operating voltage Download PDFInfo
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- CN101354922B CN101354922B CN2007103023414A CN200710302341A CN101354922B CN 101354922 B CN101354922 B CN 101354922B CN 2007103023414 A CN2007103023414 A CN 2007103023414A CN 200710302341 A CN200710302341 A CN 200710302341A CN 101354922 B CN101354922 B CN 101354922B
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- memory device
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory
Abstract
A voltage supply circuit includes a voltage generator and a controller. The voltage generator is configured to pump an externally input voltage and store the pumped external voltage as a first voltage having a set voltage level, before power-up begins, or pump the external voltage, add the pumped voltage to the stored voltage, and output the added voltage as an operating voltage. The controller is configured to output a first control signal to drive the voltage generator or stop operation of the voltage generator, according to an operating state.
Description
The cross reference of related application
The application requires the korean patent application No.10-2007-74544 that submits on July 25th, 2007 and the right of priority of the korean patent application No.10-2007-105624 that submits on October 19th, 2007, and the full content of these applications is incorporated herein by reference.
Technical field
The present invention relates to the voltage supply circuit of flash memory device, more specifically, relate to the voltage supply circuit that when applying power supply, carries out boost operations (pumping operation), comprise the flash memory device of this voltage supply circuit, and the method that operating voltage is provided.
Background technology
Can carry out the semiconductor memory apparatus that electricity is wiped and programmed, especially in the flash memory device, F-N (Fowler-Nordheim) tunnelling method and thermoelectron method for implanting are used to wipe the erase operation that is stored in the data in the storage unit and with the programming operation of data storage in storage unit.
For programming data in the storage unit, use the thermoelectron method for implanting.In the thermoelectron method for implanting, the electronics of channel region that is adjacent to the drain region of storage unit is injected into the floating boom of storage unit.The high voltage that is used to programme is applied to the control gate of storage unit.The common scope of high voltage that is used for the operation of flash memory device is 15V to 20V.Substantially, the flash memory device that is operated in low supply voltage is included in and produces high-tension voltage supply circuit in the chip that comprises this flash memory device.Voltage supply circuit is configured to be high voltage by using booster circuit will import the low-voltage rising usually.
Figure 1A is the process flow diagram of operation that the conventional voltage supply circuit that is used to provide program voltage is shown.
With reference to Figure 1A, even provide external voltage to flash memory device, the voltage supply circuit that is provided for voltage that flash memory device is programmed can not provide enough voltage to drive this flash memory device.Therefore, certain power on point (PUP) before arriving, can not carry out any operation.For this reason, before arriving PUP, external voltage can not be used as the builtin voltage of flash memory device.
If reach PUP in step 101, then external voltage is imported into flash memory device, this flash memory device executable operations initialization.Because voltage supply circuit does not start boost operations, therefore in step S103, output voltage V a has identical level with external voltage VDD.
In step S105, be imported into flash memory device if be used for the order of programming operation, and activation command is imported into voltage supply circuit thus, then in step S107, voltage supply circuit starts boost operations with boosted output voltages Va.If output voltage V a boosts by this kind and is enhanced, and output voltage reaches desired destination voltage in step S109, then finishes boost operations.
Voltage supply circuit uses the working current of flash memory device to obtain the output voltage V a of expectation.Like this, boost operations utilizes most of working current of flash memory device to carry out.When external voltage VDD was applied to flash memory device, the starting point that powers on was as described below.
Figure 1B is the view that the work relationship between external voltage and the conventional voltage supply circuit is shown.
With reference to Figure 1B, (for example, PUP), then flash memory device is initialised if external voltage arrives certain level.At this moment, in the A district, voltage supply circuit is not carried out any boost operations.If the input activation command, then voltage supply circuit uses the internal work electric current to carry out the boost operations of the target voltage from external voltage (VDD) level to expectation, thereby output voltage V a is provided.
In other words, before arriving idle condition or PUP, voltage supply circuit is not carried out the boost in voltage operation, but behind the input activation command, ability trigger voltage boost operations.Therefore, consumed most of working current of flash memory device.
Summary of the invention
The present invention relates to voltage supply circuit and the flash memory device that comprises this circuit, and the method that operating voltage is provided, wherein be used for to voltage supply circuit that flash memory device provides operating voltage by before arriving PUP at it or when it is in idle condition, carry out the voltage that certain level is stored in the boost in voltage operation, carry out under the state of activation the required time of boost in voltage thereby be reduced in, and save current sinking.
In one embodiment, voltage supply circuit comprises voltage generator and controller.Voltage generator was configured to before the beginning that powers on, the outside voltage of importing raises, and the external voltage that storage raises is as first voltage with setting voltage level, or this external voltage that raises, the voltage that raises is added on the stored voltage, and the voltage after the output addition is as operating voltage.Controller is configured to export first control signal with the driving voltage generator or stop the operation of voltage generator according to duty.
In another embodiment, flash memory device comprises: memory cell array, this array comprise be connected respectively to a plurality of bit lines to a plurality of storage unit of a plurality of word lines; A plurality of caching of page circuit, it is right that it corresponds respectively to a plurality of bit lines, and be configured to program data in the storage unit or read the data that are stored in the storage unit; The voltage feeding unit, it is configured to the external voltage that raises, and the voltage that produce to raise is as initial voltage, and the voltage that produces of storage, or this initial voltage and producing of raising is used to programme or the operating voltage of read operation; And the Y decoder circuit, it is connected respectively to a plurality of caching of page circuit, and data I/O line, and is configured to programming data is sent to the caching of page circuit and exports the reading of data from the caching of page circuit that receives capable to data I/O.
In another embodiment, provide the method for the operating voltage of flash memory device to comprise: before powering on, to use external voltage boosted voltage level and produce first voltage, determine the work at present state, if the result who determines is that the work at present state is an idle condition, external voltage then raises, the voltage that raises is added on first voltage, and the voltage after the generation addition is as second voltage, if and the work at present state transitions is to state of activation, external voltage then raises, voltage after raising is added on second voltage, and produces and be used to the operating voltage of programming or reading.
Description of drawings
Figure 1A is the process flow diagram of operation that the conventional voltage supply circuit that program voltage is provided is shown;
Figure 1B is the view that the operative relationship between external voltage and the conventional voltage supply circuit is shown;
Fig. 2 A is the block diagram according to the flash memory device of the embodiment of the invention;
Fig. 2 B is the detailed diagram of the voltage supply circuit shown in Fig. 2 A;
Fig. 3 is the operational flowchart by the method for the execution of the flash memory device shown in Fig. 2 A; And
Fig. 4 is the view that illustrates according to the relation between the operation embodiment of the invention, voltage supply circuit and the external voltage.
Embodiment
Describe according to a particular embodiment of the invention with reference to the accompanying drawings.
Fig. 2 A is the block diagram according to the flash memory device of the embodiment of the invention.
With reference to figure 2A, comprise according to the flash memory device 200 of the embodiment of the invention: memory cell array 210, it comprises a plurality of storage unit that are used for data storage, this storage unit comprises word line and bit line; Caching of page unit 220, it is used for programming data into memory cell array 210 or reads the data that are stored in memory cell array 210; Y demoder 230 is used for selecting caching of page unit 220 according to Input Address; X demoder 240 is used for coming according to Input Address the word line of select storage unit array 210; Voltage feeding unit 250, it is used to produce the operating voltage of the operation that is used for flash memory device 200; And controller 260, it is used to export the control signal of the operation that is used for nand flash memory equipment 200.
Caching of page unit 220 comprises a plurality of caching of page circuit.It is right that each caching of page circuit is connected to the bit line of memory cell array 210, and be configured to carry out in the storage unit that programs data into connected bit line or from the operation of the storage unit reading of data of connected bit line.
Below voltage feeding unit 250 is described in detail.
Fig. 2 B is the detailed diagram of the voltage supply circuit shown in Fig. 2 A.
With reference to figure 2B, voltage feeding unit 250 comprises: voltage generator 251, be used in response to control signal rising operating voltage, and the voltage of output rising; Controller 255 is used for controlling according to the mode of operation of flash memory device 200 operation of voltage generator 251; Idle inspection unit 257 is used to check whether the working signal that is input to flash memory device 200 is in idle condition; Power on unit 258 is used to check whether external voltage is imported into flash memory device 200 and the beginning that powers on; And the first and second inverter IN1, IN2.
Be input to the operation command signal (Writing/Reading of flash memory device 200; W/R) be transfused to voltage generator 251, the described operation command signal rising operating voltage of these voltage generator 251 responses.In addition, voltage generator 251 also can irrespectively start boost operations with this operation command signal under the control of controller 255.
The booster circuit unit 252 of voltage generator 251 is in response to the control signal rising input voltage of operation command signal W/R or controller 255, and the generation high voltage.Voltage storage cell 253 is stored the initial voltage that is produced by booster circuit unit 252 under the control of controller 255.Voltage storage cell 253 can use capacitor to realize.
In addition, controller 255 operation response command signal W/R, control booster circuit unit 252 utilizes the initial voltage that is stored in the voltage storage cell to start boost operations, also controls the operating voltage Va of output unit 254 with output 252 outputs from the booster circuit unit.
The first inverter IN1 conversion operations command signal W/R, and with the conversion signal be input to idle inspection unit 257.When operation command signal W/R was not imported into controller, idle inspection unit 257 provided the idle signal of high level to controller 255.
The second inverter IN2 changes the electrifying startup signal, and the signal of conversion is input to power on unit 258.Before the beginning that powers on, power on unit 258 is to the control signal of controller 255 input high levels, and when powering on beginning, to the control signal of controller 255 input low levels.
When the control signal of idle inspection unit 257 or power on unit 258 input high levels, the initial voltage boost operations is carried out in controller 255 control booster circuit unit 252.
Describe the as above method of the voltage feeding unit 250 of structure of operation below in detail.
Fig. 3 is the operational flowchart of the performed method of the flash memory device shown in Fig. 2 A.
With reference to figure 3, before external voltage being input to flash memory device 200 and powering on beginning, the voltage rising is carried out in booster circuit unit 252 in step S301.
If flash memory device 200 is applied in external voltage, then power on unit 258 to the control signal of controller 255 input high levels up to reaching PUP.
The control signal of boost operations with the response high level carried out in controller 255 control booster circuit unit 252, and this control signal is by 258 inputs of power on unit.The voltage level that controller 255 may command raise is no more than the voltage level of setting.The voltage that raises is stored in the voltage storage cell 253.
In step S303, if reach PUP, the beginning that powers on, then power on unit 258 is to the control signal of controller 255 input low levels.In step S305, controller 255 stops the operation of booster circuit unit 252 with the low level control signal of response from power on unit 258.The voltage that has been produced by booster circuit unit 252 among the controller 255 controlled step S301 is stored in the voltage storage cell 253 it, stops the operation of voltage generator 251 simultaneously, makes in step S307 not output voltage of output unit 254.In certain embodiments, step S306 and S307 can carry out simultaneously, perhaps can change the order of these steps.
The point that power on unit 258 only begins from power on begins the control signal of output low level.Simultaneously, whether idle inspection unit 257 is imported into flash memory device 200 according to operation command signal and exports idle signal.
In other words, if operation command signal W/R is imported the idle signal of then idle inspection unit 257 output low levels with high level.But if operation command signal W/R is imported with low level, the idle signal of then idle inspection unit 257 input high levels is to controller 255.In step S309, controller 255 is determined flash memory device 200 current state of activation or the idle conditions of being in.
If the idle signal of idle inspection unit 257 input high levels, then controller 255 determines that flash memory device 200 is to be in idle condition and unactivated state, and in step S311, control booster circuit unit 252 trigger voltage boost operations.At this moment, booster circuit unit 252 can make voltage begin to raise from the voltage level that raises among step S301 and be stored in the voltage storage cell 253.
In addition, in step S313, the boosted circuit unit of voltage sensing unit 256 sensings of controller 255 252 raises and the voltage level of output, and whether the voltage level of determining institute's sensing reaches and preset initial voltage, and with result notification controller 255.
If the result who determines is that booster circuit unit 252 has brought the voltage up to predetermined initial voltage, stop boost operations at step S305 middle controller 255 so, with the store voltages that raises in voltage storage cell 253, and in step S307, also stop the operation of voltage generator 251, make not output voltage of output unit 254.
Because operational order is not imported into flash memory device 200, therefore repeating step S305 to S313 periodically when idle condition continues.
In addition, if operational order, for example program command or reading order are imported into flash memory device 200, and the operation command signal W/R of high level is imported into voltage generator 251 thus, then idle inspection unit 257 is to the idle signal of controller 255 input low levels, and notification controller 255 flash memory devices 200 are in enable mode.
The operation of controller 255 release voltage generators 251 (in step S307, this operation stops under enable mode) makes voltage generator 251 normal runnings in step S315.In the voltage generator 251 of normal running, in step S317, booster circuit unit 252 utilizes input voltage to carry out voltage and raises.The voltage that raises is stored in the voltage storage cell 253, is added to then on this voltage.In step S319, if reach operating voltage Va by booster circuit unit 252 voltage that raises and the voltage sum that is stored in the voltage storage cell 253, then output unit 254 is exported results.
According to the voltage feeding unit as above constructed according to the embodiment of the invention, if the voltage that is stored in the voltage storage cell 253 is set to 10V, because before the voltage feeding unit arrives state of activation, reached the voltage level of 10V, and the booster voltage of booster circuit unit 152 is combined subsequently, therefore can reach desired destination voltage soon.
Fig. 4 be the explanation according to the embodiment of the invention, at the operation of voltage supply circuit and the view of the relation between the external voltage.
As can be seen from Figure 4, if the input external voltage, then the boost in voltage operation is carried out in controller 255 control booster circuit unit 252 before the beginning that powers on, and stops the boost in voltage operation when arriving PUP.
Be elevated to the shared time of the target voltage that is used to operate with external voltage (VDD) level with low-voltage and compare, can be shortened the pressure rising time that is used to operate from the initial voltage set to target voltage, and stable operating voltage can be provided.
As mentioned above, according to voltage supply circuit and the flash memory device that comprises this circuit, and, before the beginning that powers on or before the idle condition end, operating voltage is elevated to the setting level, and stores this operating voltage according to the method that operating voltage is provided of the present invention.Thereby, can shorten bringing the voltage up to the required time of operational voltage level, and stable operating voltage can be provided.
Although carried out foregoing description, should understand those of ordinary skill in the art and under the situation of the spirit and scope that do not depart from the present invention and claims, can make changes and modifications the present invention with reference to specific embodiment.
Claims (24)
1. voltage supply circuit comprises:
Voltage generator, it is configured to:
Before the beginning that powers on, the voltage of the outside input that raises, and store the external voltage conduct that raises
First voltage, wherein said first voltage has the voltage level of setting, or
The voltage of the outside input of rising is added to the voltage that raises on the stored voltage, and the voltage after the output addition is as operating voltage; And
Controller, it is configured to export the operation of first control signal to drive described voltage generator or to stop this voltage generator, and wherein this controller is exported described first control signal according to duty or is stopped the operation of described voltage generator.
2. voltage supply circuit as claimed in claim 1 also comprises:
The power on unit, its be configured to according to this external voltage apply the inspection electrifying startup, and input power on signal is to described controller; And
The status checking unit, it is configured to carry out according to operation command signal the status checking of relevant idle condition or state of activation, and input state checks that signal is to described controller.
3. voltage supply circuit as claimed in claim 2, wherein said voltage generator comprises:
Voltage rising output unit is used for raising and exporting this external voltage; And
Voltage storage cell is used to store the voltage that is produced by described voltage rising output unit.
4. voltage supply circuit as claimed in claim 3, wherein said voltage rising output unit
Comprise and be used to raise the also booster circuit of the voltage of output rising of input voltage.
5. voltage supply circuit as claimed in claim 3, wherein said voltage storage cell comprises capacitor.
6. voltage supply circuit as claimed in claim 3, wherein said controller comprise and are used for the voltage sensing device that sensing is stored in the voltage level of described voltage storage cell.
7. voltage supply circuit as claimed in claim 3, wherein said controller is configured to control described voltage rising output unit to produce this first voltage before electrifying startup, and first store voltages that described controller also is configured to be produced is in described voltage storage cell.
8. voltage supply circuit as claimed in claim 3, wherein said controller is configured to control described voltage rising output unit and operates under idle condition, produce second voltage of a voltage level, and second store voltages that will produce is in described voltage storage cell, and the voltage level of described second voltage is identical with described first voltage or be higher than described first voltage.
9. voltage supply circuit as claimed in claim 8, the voltage level of wherein said second voltage is added to first voltage that is stored in the voltage storage cell by the voltage that will be raise by voltage rising output unit and produces under idle condition.
10. voltage supply circuit as claimed in claim 8, wherein said controller is controlled at the voltage that is raise by voltage rising output unit under the state of activation, it is added on the voltage that is stored in the voltage storage cell, and the voltage of control store in voltage storage cell, this voltage is output when making the level of this voltage in being stored in voltage storage cell reach operational voltage level.
11. a flash memory device comprises:
Memory cell array, it comprise be connected respectively to a plurality of bit lines to a plurality of storage unit of a plurality of word lines;
A plurality of caching of page circuit, it is right that it corresponds respectively to described a plurality of bit line, and this circuit is configured to program data in the described storage unit or reads the data that are stored in the described storage unit;
The voltage feeding unit, it is configured to:
Rising external voltage, the voltage that produces rising are as initial voltage, and the voltage of storage generation, or
The rising initial voltage, and produce and to be used to programme or the operating voltage of read operation; And
The Y decoder circuit, it is connected respectively to described a plurality of caching of page circuit, and data I/O line, described Y decoder circuit is configured to programming data is sent to described caching of page circuit, and the reading of data that will be received from described caching of page circuit outputs to described data I/O line.
12. flash memory device as claimed in claim 11, wherein said voltage feeding unit comprises:
Voltage generator, it is configured to:
Before the beginning that powers on, the voltage of the outside input that raises and the external voltage conduct that storage raises have first voltage of setting voltage level, or
The voltage of the outside input of rising is added to the voltage that raises on the stored voltage, and the voltage after the output addition is as operating voltage; And
Controller, it is configured to:
Export first control signal driving described voltage generator, or
Stop the operation of described voltage generator,
Wherein, described controller is exported described first control signal according to duty, or stops the operation of described voltage generator.
13. flash memory device as claimed in claim 12, wherein said voltage feeding unit comprises:
The power on unit, be used for according to this external voltage apply the inspection electrifying startup, and the power on signal is input to described controller; And
The status checking unit is used for carrying out according to operation command signal the status checking of relevant idle condition or state of activation, and the status checking signal is input to described controller.
14. flash memory device as claimed in claim 13, wherein said voltage generator comprises:
Voltage rising output unit is used for raising and the output external voltage; And
Voltage storage cell is used to store the voltage that is produced by described voltage rising output unit.
15. comprising, flash memory device as claimed in claim 14, wherein said voltage rising output unit be used to raise the also booster circuit of the voltage of output rising of input voltage.
16. flash memory device as claimed in claim 14, wherein said voltage storage cell comprises capacitor.
17. comprising, flash memory device as claimed in claim 14, wherein said controller be used for the voltage sensing device of level that sensing is stored in the voltage of described voltage storage cell.
18. flash memory device as claimed in claim 14, wherein said controller are controlled described voltage rising output unit producing described first voltage before electrifying startup, described controller with first store voltages that produced in described voltage storage cell.
19. flash memory device as claimed in claim 14, wherein said controller control voltage rising output unit is operated under idle condition, produce second voltage of a voltage level, and with second store voltages that produced in voltage storage cell, the voltage level of wherein said second voltage is identical with described first voltage or be higher than described first voltage.
20. flash memory device as claimed in claim 19, wherein said second voltage are added on first voltage that is stored in the voltage storage cell by the voltage that will be raise by voltage rising output unit under idle condition and produce.
21. flash memory device as claimed in claim 19, wherein said controller is controlled at the voltage that is raise by described voltage rising output unit under the state of activation, it is added on the voltage that is stored in the voltage storage cell, and the voltage of control store in voltage storage cell, this voltage is output when making the level of this voltage of storing in voltage storage cell arrive operational voltage level.
22. the method that the operating voltage of flash memory device is provided, described method comprises: used external voltage boosted voltage level before powering on, and produce first voltage;
If the work at present state of flash memory device is an idle condition, this external voltage that then raises is added to the voltage that raises on described first voltage, and the voltage after the generation addition is as second voltage; And
If the work at present state of described flash memory device is transferred to state of activation from idle condition, this external voltage that raises is added to the voltage that raises on this second voltage, and produces and be used to the operating voltage of programming or reading.
23. method as claimed in claim 22, wherein said first voltage or described second voltage are stored after producing.
24. method as claimed in claim 22, also comprise if the work at present state of described flash memory device is transferred to state of activation from idle condition after the beginning that powers on, described external voltage then raises, the voltage that raises is added on described first voltage, and the voltage after the generation addition is as the operating voltage that is used to programme or read.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20070074544 | 2007-07-25 | ||
| KR1020070074544 | 2007-07-25 | ||
| KR10-2007-0074544 | 2007-07-25 | ||
| KR1020070105624A KR100875012B1 (en) | 2007-07-25 | 2007-10-19 | Voltage offering circuit and flash memory device having the same and method of operating the same |
| KR10-2007-0105624 | 2007-10-19 | ||
| KR1020070105624 | 2007-10-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101354922A CN101354922A (en) | 2009-01-28 |
| CN101354922B true CN101354922B (en) | 2011-08-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2007103023414A Active CN101354922B (en) | 2007-07-25 | 2007-12-25 | Voltage supply circuit and flash memory device including the same, and method of supplying operating voltage |
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| KR (1) | KR100875012B1 (en) |
| CN (1) | CN101354922B (en) |
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| CN104040483B (en) * | 2011-12-27 | 2017-07-07 | 英特尔公司 | For the cold bootstrap of the optimization of nonvolatile memory |
| KR102084547B1 (en) * | 2013-01-18 | 2020-03-05 | 삼성전자주식회사 | Nonvolatile memory device, memory system having the same, external power controlling method thereof |
| CN105632553A (en) * | 2014-10-27 | 2016-06-01 | 北京兆易创新科技股份有限公司 | Flash memory and voltage feedback method and circuit used for flash memory |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1147314A (en) * | 1994-03-03 | 1997-04-09 | 罗姆有限公司 | Low voltage one transistor flash EEPROM cell using Fowler-Nordheim Programming and erase |
| US6351420B1 (en) * | 2000-02-07 | 2002-02-26 | Advanced Micro Devices, Inc. | Voltage boost level clamping circuit for a flash memory |
| US6535424B2 (en) * | 2001-07-25 | 2003-03-18 | Advanced Micro Devices, Inc. | Voltage boost circuit using supply voltage detection to compensate for supply voltage variations in read mode voltage |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100612569B1 (en) * | 2005-03-10 | 2006-08-11 | 주식회사 하이닉스반도체 | Flash memory device with improved pre-program function and method for controlling pre-program operation of the same |
| KR100648295B1 (en) | 2005-10-12 | 2006-11-23 | 삼성전자주식회사 | Flash memory device and voltage generating circuit for the same |
-
2007
- 2007-10-19 KR KR1020070105624A patent/KR100875012B1/en active IP Right Grant
- 2007-12-25 CN CN2007103023414A patent/CN101354922B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1147314A (en) * | 1994-03-03 | 1997-04-09 | 罗姆有限公司 | Low voltage one transistor flash EEPROM cell using Fowler-Nordheim Programming and erase |
| US6351420B1 (en) * | 2000-02-07 | 2002-02-26 | Advanced Micro Devices, Inc. | Voltage boost level clamping circuit for a flash memory |
| US6535424B2 (en) * | 2001-07-25 | 2003-03-18 | Advanced Micro Devices, Inc. | Voltage boost circuit using supply voltage detection to compensate for supply voltage variations in read mode voltage |
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| Publication number | Publication date |
|---|---|
| KR100875012B1 (en) | 2008-12-19 |
| CN101354922A (en) | 2009-01-28 |
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