CN101278454B - Abrupt metal-insulator transition device, circuit and electrical and/or electronic system - Google Patents

Abrupt metal-insulator transition device, circuit and electrical and/or electronic system Download PDF

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Publication number
CN101278454B
CN101278454B CN2006800363846A CN200680036384A CN101278454B CN 101278454 B CN101278454 B CN 101278454B CN 2006800363846 A CN2006800363846 A CN 2006800363846A CN 200680036384 A CN200680036384 A CN 200680036384A CN 101278454 B CN101278454 B CN 101278454B
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insulator transition
abrupt metal
insulator
abrupt
transition device
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CN101278454A (en
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金铉卓
姜光镛
金俸准
李镕旭
尹善真
蔡秉圭
金敬玉
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Electronics and Telecommunications Research Institute ETRI
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Electronics and Telecommunications Research Institute ETRI
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H10N99/03—Devices using Mott metal-insulator transition, e.g. field effect transistors

Abstract

Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.

Description

Abrupt metal-insulator transition device, circuit and electric and/or electronic system
Technical field
The present invention relates to a kind of electronic installation and the circuit of protecting electric and/or electronic system, relate more specifically to the circuit of the high-voltage noise that a kind of abrupt metal-insulator transition (MIT) installs, the elimination of use MIT device is applied to electric and/or electronic system by holding wire or power transmission line and the electric and/or electronic system that comprises this circuit.
Background technology
The noise that influences electric and/or electronic component is by the power transmission line of giving electric and/or electronic system transferring electric power and the holding wire inflow that receives, exports the signal of telecommunication from electric and/or electronic system.Correspondingly, electric and/or electronic system protective circuit is installed between power transmission line and the internal electronic element or between holding wire and internal electronic element.Electric and/or the electronic system protective circuit is extremely important, nearly all electronic product that comprises electronic component all needs it.
As an example of electric and/or electronic component, the 800KV-SF that in transformer station, uses 6Gas-insulated switchgear device (gas insulating switch gear) is a kind of electric power transit predetermined fraction or its end when electricity taking place leaking or the high-voltage switch gear that stops electric power to transport when the super-high-current that is caused by unexpected unexpected periphery flows in electric and/or electronic system.SF 6Gas is a kind of insulating gas, and its electric medium constant is at least than the big twice of electric medium constant of air.
When switch since contingency and conducting or by the time, may in electric and/or electronic system, flow greater than the peak current that transports voltage.At this moment, but insulating gas or hardening synthetic resin are destroyed, and the temperature of switch rises, and causes the blast of switch.In addition, if transformer station is hit by thunder and lightning, high-voltage line and switch may break.If these situations take place, electric power transports time-out, causes enormous economic loss.Therefore, the manufactured high-voltage switch gear of monitoring of insulator damage monitoring system.
Insulator damage be because, when the high-voltage noise signal of voltage greater than rated voltage, when especially super-high voltage noise signal is applied in, electric current is concentrated by the impurity that is included in the insulating material, causes the interruption of even streaming current and by the damage of the insulating material due to the rising of insulating material temperature.Therefore, in order to prevent insulator damage, voltage should be by bypass greater than the super-high voltage noise signal of rated voltage.
High-voltage noise is generally eliminated by rheostat, and this rheostat is a semiconductor resistor.The ceramic varistor that forms with zinc oxide is used to the bypass super-high voltage noise.Yet,, when reducing the size of ceramic varistor, have restriction because ceramic varistor should have big internal resistance.In addition, ceramic varistor can not be eliminated super-high voltage noise fully because of internal resistance, can only relatively reduce the amplitude of noise according to the amplitude of internal resistance.Yet ceramic varistor is unique scheme of eliminating high-voltage noise at present.
For instance, U.S. Patent No. 5,912,611 and 6,594,133 disclose the surge lightning arrester (serge arrester) that a kind of ceramic varistor that is similar to above-mentioned ceramic varistor by use suppresses surge voltage (serge voltage).Yet the surge lightning arrester can not be eliminated the superhigh pressure that is higher than 800KV.
Summary of the invention
The invention provides a kind of abrupt metal-insulator transition (MIT) device, be used for the bypass super-high voltage noise with protect electric and/or electronic system for example high-voltage switch gear avoid superhigh pressure; Use the high-voltage noise of sudden change MIT device bypass super-high voltage noise to eliminate circuit; And the electric and/or electronic system that comprises high-voltage noise elimination circuit.
Description of drawings
Fig. 1 is the sectional view that is used for stacked sudden change MIT device of the present invention;
Fig. 2 A is the sectional view that is used for planar-type abrupt MIT device of the present invention;
Fig. 2 B is the plane graph of the planar-type abrupt MIT device among Fig. 2 A;
Fig. 3 is the sectional view of dual-surface stacking type sudden change MIT device according to an embodiment of the invention;
Fig. 4 is the sectional view of two-sided planar type sudden change MIT device according to another embodiment of the invention;
Fig. 5 is the sectional view of the single face sudden change MIT device that comprises a plurality of planar abrupt MIT membrane structures according to another embodiment of the invention;
Fig. 6 is the sectional view of the double-sided abrupt MIT device that comprises a plurality of planar abrupt MIT membrane structures according to another embodiment of the invention;
Fig. 7 is the circuit diagram that the high-voltage noise that comprises sudden change MIT device chain is eliminated circuit that comprises according to another embodiment of the invention;
Fig. 8 is the circuit diagram that high-voltage noise is eliminated circuit that comprises according to another embodiment of the invention, and this high-voltage noise is eliminated circuit and comprised sudden change MIT device chain and at least one the different sudden change MIT device chain that is parallel-connected to aforementioned sudden change MIT device chain;
Fig. 9 is the circuit diagram that high-voltage noise is eliminated circuit that comprises according to another embodiment of the invention, and this high-voltage noise is eliminated circuit and comprised sudden change MIT device chain; With
Figure 10 A illustrates the high-voltage noise that is included in according to the present invention to 10E and eliminates the deboost of each the sudden change MIT device in the circuit and the total deboost of sudden change MIT device of connecting mutually.
Embodiment
According to an aspect of the present invention, provide a kind of abrupt metal-insulator transition (MIT) device, comprising: substrate, the first sudden change MIT structure and the second sudden change MIT structure.The first and second sudden change MIT structures are formed at respectively on the upper and lower surface of substrate.
Each this first and second sudden change MIT structures have the characteristic of insulator when being lower than predetermined deboost, have the characteristic of metal when being equal to or higher than this deboost.
Each this first and second sudden change MIT structure comprises sudden change MIT film and the two-layer at least electrode film that contacts this sudden change MIT film.
At least a material that sudden change MIT film can be selected from following group forms: the inorganic semiconductor that has added low-concentration holes, added the inorganic insulator of low-concentration holes, added the organic semiconductor of low-concentration holes, added the organic insulator of low-concentration holes, added the semiconductor of low-concentration holes, added the oxide semiconductor of low-concentration holes, and the oxide-insulator that has added low-concentration holes, wherein above-mentioned material all comprises oxygen, carbon, semiconductor element (as III-V family and II+-VI family), transition metal, at least a in rare earth element and the lanthanide series.
Sudden change MIT film can be formed by at least a material that is selected from following group: W, Mo, W/Au, Mo/Au, Cr/Au, Ti/W, Ti/Al/N, Ni/Cr, Al/Au, Pt, Cr/Mo/Au, YB 2Cu 3O 7-d, Ni/Au, Ni/Mo, Ni/Mo/Au, Ni/Mo/Ag, Ni/Mo/Al, Ni/W, Ni/W/Au, Ni/W/Ag and Ni/W/Al.
According to another aspect of the present invention, provide a kind of high-voltage noise to eliminate circuit, it comprises the sudden change MIT device chain that is parallel-connected to electric and/or electronic system to be protected, and wherein this sudden change MIT device chain comprises at least two sudden change MIT devices of series connection mutually.
Electric and/or electronic system can be the high-voltage switch gear that stops high pressure.Sudden change MIT device chain has the corresponding total deboost of deboost sum with sudden change MIT device.When the voltage that is equal to or greater than total deboost was applied in, each sudden change MIT device changed metallic character into from the insulator characteristic, and the transformation of sudden change MIT device takes place simultaneously.High-voltage noise is eliminated circuit and be may further include at least one the sudden change MIT device chain that is parallel-connected to the sudden change MIT device chain that has comprised.
According to a further aspect in the invention; improve a kind of high-voltage noise and eliminate circuit; it comprises the sudden change MIT device chain that is parallel-connected to electric and/or electronic system to be protected, comprises substrate and by at least two the sudden change MIT device chains that sudden change MIT structure obtains that are connected in series.
Sudden change MIT device chain can comprise: the first sudden change MIT device chain that is formed at least two sudden change MIT structures that comprise mutual series connection of upper surface of base plate; And the second sudden change MIT device chain that is formed at least two sudden change MIT structures that comprise mutual series connection of base lower surface.The first and second sudden change MIT device chains can be connected in parallel mutually by the contact wire in parallel that penetrates substrate.
According to a further aspect in the invention, provide a kind of electric and/or electronic system, comprising: electric and/or electronic system to be protected; And the high-voltage noise elimination circuit that comprises the sudden change MIT device chain that is parallel-connected to electric and/or electronic system, this sudden change MIT device chain obtains by at least two the sudden change MIT devices that are connected in series mutually.
High-voltage noise is eliminated circuit and be may further include at least one the sudden change MIT device chain that is parallel-connected to the sudden change MIT device chain that has comprised.
Referring now to accompanying drawing the present invention is described more fully, one exemplary embodiment of the present invention shown in the drawings.Yet, invention can be by many multi-form enforcements, can not be construed as limited to herein the embodiment that proposes, more properly, these embodiment are used for making that disclosure of the present invention is more deep and concrete and more fully pass on thought of the present invention to those skilled in the art.In the accompanying drawings, for clear and exaggerated the thickness in layer and zone.For the ease of understanding, use identical reference number to represent similar elements in the accompanying drawing.
The present invention proposes a kind of new medium and eliminate circuit by the static that uses this new medium to eliminate to come from electric and/or electronic system or the high-voltage noise of high voltagehigh frequency noise, the electrology characteristic of this new medium is according to the voltage levvl sudden change of received signal.This new medium is called metal-insulator transition (MIT) device.
The sudden change MIT device that uses among the present invention comprises sudden change MIT film (hereinafter being called thin film) and first electrode film and second electrode film that are used for contacting this thin film.According to the position of the thin film and first and second electrode films, this sudden change MIT device can have and pile up (or vertical) structure or planarized structure.
Fig. 1 is used for the sectional view with sudden change MIT device of stacked structure of the present invention.With reference to figure 1, the sudden change MIT device with stacked structure comprises: substrate 100; Be formed on the resilient coating 200 on the substrate 100; And be formed on first electrode film 410, thin film 300 and second electrode film 420 on the resilient coating 200 successively.
Lattice mismatch between the resilient coating 200 buffering substrates 100 and first electrode film 410.When the lattice mismatch between the substrate 100 and first electrode film 410 was very little, first electrode film 410 can not wanted resilient coating 200 and is formed directly on the substrate 100.Resilient coating 200 can comprise SiO 2Or Si 3N 4Film.
Each of first and second electrode films 410,420 of formation electrode film 400 is by W, Mo, W/Au, Mo/Au, Cr/Au, Ti/W, Ti/Al/N, Ni/Cr, Al/Au, Pt, Cr/Mo/Au, YB 2Cu 3O 7-d, and Ni/Mo/Au at least a material form.Substrate 100 is by being selected from Si, SiO 2, GaAs, Al 2O 3, plastics, glass, V 2O 5, PrBa 2Cu 3O 7, YBa 2Cu 3O 7, MgO, SrTiO 3, the SrTiO that mixes of Nb 3And at least a material in the group of silicon-on-insulator (SOI) composition forms.
Fig. 2 A is used for the vertical cross-section diagram with sudden change MIT device of planarized structure of the present invention.With reference to figure 2A, the sudden change MIT device with planarized structure comprises: substrate 100; Be formed on the resilient coating 200 on the substrate 100; Be formed on the thin film 300a on the part upper surface of resilient coating 200; Thereby and be formed on the exposed portions serve of resilient coating 200 and cover the side of thin film 300a and the first electrode film 410a and the second electrode film 420a that the part upper surface faces one another.In other words, the first and second electrode film 410a and 420a are spaced from each other by the thin film 300a that is formed between them.
Lattice mismatch between resilient coating 200 buffering thin film 300a and the substrate 100.When the lattice mismatch between substrate 100 and the thin film 300a was very little, thin film 300a can not want resilient coating 200 and is formed directly on the substrate 100.
Certainly, resilient coating 200, the first and second electrode film 410a and 420a and substrate 100 can be formed by the material that is used to form resilient coating 200, the first and second electrode film 410a and 420a and substrate 100 among Fig. 1 respectively.The first and second electrode film 410a and 420a constitute electrode film 400a.
The conductivity of thin film 300 and 300a is because sudden change MIT and at specific voltage jump.Yet though sudden change MIT takes place, the structure of thin film 300 and 300a does not change.
Thin film 300 and 300a can obtain by suitably adding low-concentration holes to insulator.Adding low-concentration holes cause the suddenling change mechanism of MIT to insulator discloses in some articles, as New J.Phys.6 (2004) 52, http//xxx.lanl.gov/abs/cond-mat/0411328 and Appl.Phys.Lett.86 (2005) 242101, and U.S. Patent No. 6,624,463.
At least a material that each of the thin film 300 of MIT and 300a can be selected from following group forms to cause sudden change MIT device in Fig. 1 and Fig. 2 A to be undergone mutation: the p type inorganic semiconductor that has added low-concentration holes, added the p type inorganic insulator of low-concentration holes, added the p type organic semiconductor of low-concentration holes, added the p type organic insulator of low-concentration holes, added the p N-type semiconductor N of low-concentration holes, added the p type oxide semiconductor of low-concentration holes, and the p type oxide-insulator that has added low-concentration holes.Every kind of above-mentioned material comprises at least a in oxygen, carbon, semiconductor element (as III-V family and II-VI family), transition metal, rare earth element and the lanthanide series.Thin film 300 and 300a also can be formed by the n N-type semiconductor N-insulator with very big resistance.
The electrology characteristic of sudden change MIT device is that the voltage of metallic alloy is defined as deboost from insulator transition.Deboost can change according to the structure or the material of the parts of sudden change MIT device.
Fig. 2 B is the plane graph of the planar-type abrupt MIT device among Fig. 2 A.Resilient coating 200, thin film 300a and first and second electrode film 410a and the 420a have been shown among Fig. 2 B.The deboost of planar-type abrupt MIT device can change according to the structure or the material of the parts of sudden change MIT device, for example, change according to each the variation of width w between electrode film 410a and the 420a apart from the variation of d or electrode film 410a and 420a.
Fig. 3 is the sectional view of dual-surface stacking type sudden change MIT device according to an embodiment of the invention.With reference to figure 3, dual-surface stacking type sudden change MIT device comprises substrate 100, is respectively formed at substrate 100 upper and lower lip-deep upper and lower resilient coating 200a and 200b, is formed on the sudden change of first on resilient coating 200a MIT structure 500 and is formed on the sudden change of second on bottom breaker 200b MIT structure 500a.The first sudden change MIT structure 500 comprises first electrode film 430, thin film 300b and second electrode film 440 that is formed on the resilient coating 200a upper surface.The second sudden change MIT structure 500a comprises the first electrode film 430a, thin film 300c and the second electrode film 440a that is formed on the bottom breaker 200b lower surface.
Certainly, the material mentioned in can the description by Fig. 1 of substrate 100, electrode film 400b and 400c and thin film 300b and 300c forms.When substrate 100 when the lattice mismatch of each electrode film 430 and 430a is very little, resilient coating 200a and 200b can omit.
In the embodiments of figure 3, the first and second sudden change MIT structures 500 and 500a are formed on the upper and lower surface of single substrate 100, form two sudden change MIT devices thus.These two sudden change MIT devices can be by being formed on the mutual parallel connection of conduction contact wire in the substrate 100 or being connected in series.To this connection be described in the back with reference to figure 5 and subsequent figure.
Fig. 4 is the sectional view of two-sided planar type sudden change MIT device according to another embodiment of the invention.With reference to figure 4, two-sided planar type sudden change MIT device comprises substrate 100, be respectively formed at upper surface and the upper and lower resilient coating 200a on the lower surface and the 200b of substrate 100, be formed on the first sudden change MIT structure 600 on the upper surface of resilient coating 200a and be formed on the MIT structure 600a that suddenlys change of second on the lower surface of bottom breaker 200a.
Thereby the first sudden change MIT structure 600 comprises the thin film 300d on the part upper surface that is formed on resilient coating 200a and is formed on the exposed portions serve of resilient coating 200a and covers the side of thin film 300d and first electrode film 450 and second electrode film 460 that the part upper surface faces one another.First electrode film 450 and second electrode film 460 are spaced from each other by the thin film 300d that is formed between them.
Thereby the second sudden change MIT structure 600a comprises the thin film 300e on the part lower surface that is formed on bottom breaker 200b and is formed on the exposed portions serve of bottom breaker 200b and covers side and the opposed facing first electrode film 450a of part upper surface and the second electrode film 460a of thin film 300e.The first electrode film 450a and the second electrode film 460a are spaced from each other by the thin film 300e that is formed between them.
Certainly, the material mentioned in can the description by Fig. 1 of substrate 100, electrode film 400d and 400e and thin film 300d and 300e forms. Resilient coating 200a and 200b can omit.As with reference to figure 3 mentioned above, the first and second MIT structures 600,600a are can be by the conduction contact wire in parallel mutually or be connected in series.
Fig. 5 is the sectional view of the single face sudden change MIT device that comprises a plurality of planar abrupt MIT membrane structures according to another embodiment of the invention.With reference to figure 5, single face stacked sudden change MIT device comprises substrate 1000, be formed on resilient coating 1200 and a plurality of sudden change MIT structure on the upper surface of substrate 1000.Thereby each sudden change MIT structure comprise the thin film 1300 on the part upper surface that is formed on resilient coating 1200 and be formed on the exposed portions serve of thin film 1300 and cover the side of thin film 1300 and the part upper surface on first electrode film 1410 and second electrode film 1420 that face one another.First electrode film 1410 and second electrode film 1420 constitute electrode film 1400.
In the embodiment of Fig. 5, single face stacked sudden change MIT device comprises a plurality of sudden change MIT structures, and these a plurality of sudden change MIT structures are formed on the substrate 1000, and is spaced-apart and interconnect by conducting electricity contact wire 1500.This sudden change MIT structure that is connected in series by series connection conduction contact wire 1500 mutual electricity constitutes sudden change MIT device chain 1600.In other words, when voltage was applied to first electrode film 1410 that is positioned at sudden change MIT device chain 1600 leftmost sudden change MIT structures and is positioned at second electrode film 1420 of sudden change MIT device chain 1600 rightmost sudden change MIT structures, all sudden change MIT structures were connected in series mutually.
In the embodiment of Fig. 5, being connected in series between the sudden change MIT structure can realize easily by the series connection conduction contact wire 1500 that is formed on the resilient coating 1200.One dimension on substrate 1000 forms although Fig. 5 shows sudden change MIT structure, and sudden change MIT structure also can two dimension form on substrate 1000, and in parallel mutually or be connected in series by suitable contact wire.Sudden change MIT structure is to form simultaneously.
Certainly, the material mentioned in can the description by Fig. 1 of substrate 100, electrode film 1400 and thin film 1300 forms.Certainly, resilient coating 1200 can omit.Although use planar abrupt MIT structure among the embodiment of Fig. 5, but also can adopt stacked abrupt MIT structure.Because the electrology characteristic that produces that is connected in series between sudden change MIT device or the sudden change MIT structure will be described in the back in more detail with reference to figure 10A-10E.
Fig. 6 is the sectional view of the double-sided abrupt MIT device that comprises a plurality of planar abrupt MIT structures according to another embodiment of the invention.Double-sided abrupt MIT device among Fig. 6 is similar to the single face sudden change MIT device among Fig. 5, except a plurality of MIT structures are formed on the lower surface of substrate 2000.In other words, double-sided abrupt MIT device among Fig. 6 comprises the first sudden change MIT device chain 2700 that is made of a plurality of planar abrupt MIT structures that are formed on the substrate 2000 and be connected in series mutually, and the second sudden change MIT device chain 2700a that is made of a plurality of planar abrupt MIT structures that are formed on substrate 2000 times and be connected in series mutually.The planar abrupt MIT structure that is formed on the upper surface of resilient coating 2200a is connected in series mutually by series connection contact wire 2500.The planar abrupt MIT structure that is formed on the lower surface of bottom breaker 2200b is connected in series mutually by series connection contact wire 2500a.
In the embodiment of Fig. 6, first, second sudden change MIT device chain 2700,2700a are connected in parallel mutually by the conduction that penetrates substrate 2000 and resilient coating 2200a, 2200b contact wire 2600,2650 in parallel.In other words, being connected in parallel between first, second sudden change MIT device chain 2700, the 2700a is to realize by voltage being applied to first electrode film 2410 or the 2410a that are positioned at the first or second sudden change MIT device chain 2700 or the leftmost sudden change of 2700a MIT structure.Contact wire 2600 in parallel and one of 2650 can omit.If contact wire 2600 in parallel omits.Upper and lower sudden change MIT structure can be by voltage being applied to upper and lower sudden change MIT structure first electrode film 2410 and 2410a and being connected in series mutually.
When sudden change MIT device needs in parallel mutually and is connected in series, connect and be connected in parallel can by as among the embodiment of Fig. 6 on the upper and lower surface of substrate 2000 a plurality of sudden change MIT structures of formation, connect contact wire 2500 and 2500a and contact wire in parallel 2600 and 2650 realize easily.Alternatively, the series connection between the sudden change MIT structure and be connected in parallel can by in the embodiment of Fig. 5 as mentioned above on the upper and lower surface of substrate 2000 two dimension form sudden change MIT structure and realize.
The upper and lower lip-deep sudden change MIT structure of substrate 2000 can form simultaneously.Certainly, the material mentioned in can the description by Fig. 1 of substrate 2000, electrode film 2400 and 2400a and thin film 2300 and 2300a forms.Certainly, resilient coating 2200a and 2200b can omit.
Although what use among the embodiment of Fig. 6 is planar abrupt MIT structure, but also can adopt stacked abrupt MIT structure.Alternatively, dissimilar sudden change MIT structures can be formed on the upper and lower surface of substrate 2000.For example, the first sudden change MIT device chain 2700 that is positioned on the upper surface of substrate 2000 can be made up of planar abrupt MIT structure, and is positioned at the MIT device chain 2700a that suddenlys change of second on the lower surface of substrate 2000 and can be made up of stacked abrupt MIT structure.
To go through the electric and/or electronic system that high-voltage noise is eliminated circuit and comprised high-voltage noise elimination circuit now, this high-voltage noise elimination circuit uses sudden change MIT device to protect electric and/or electronic system exempts from high-voltage noise.
Fig. 7 is the circuit diagram that high-voltage noise is eliminated circuit 3000 that comprises according to an embodiment of the invention, and this high-voltage noise is eliminated circuit 3000 and comprised sudden change MIT device chain.With reference to figure 7, high-voltage noise is eliminated circuit 3000 and is parallel-connected to equivalent resistance Z L, and comprise the sudden change MIT device chain MIT CHAIN that is connected in series mutually and obtains by the MIT device MIT1 to MITn that will suddenly change.
Equivalent resistance Z LRepresent electric and/or electronic system to be protected.Electric and/or electronic system Z LCan be any electric and/or electronic system, as long as it needs the protected high-voltage noise that exempts from, for example, various electronic installations, electric component, electronic system or high-pressure electronic system.Particularly, electric and/or electronic system Z LBeing preferably needs the protected electric and/or electronic system that exempts from super-high voltage noise, for example, and high-tension bus-bar, high-pressure electronic parts, home interrupter switches (being fuse box) and high-voltage switch gear.Generally speaking, electric and/or electronic system Z LAbout 50 Ω of real impedance.In some cases, electric and/or electronic system Z LReal impedance can be greater than 50 Ω.If electric and/or electronic system Z LBe high-voltage switch gear, it can carry out insulation.
Although sudden change MIT device chain MIT CHAIN can realize by forming sudden change MIT device MIT1 to MITn earlier separately and subsequently it being connected in series mutually, but sudden change MIT device chain MITCHAIN also can realize by form a plurality of sudden change MIT structures on substrate as the embodiment of Fig. 5 and 6.For the total impedance that reduces sudden change MIT device chain MIT CHAIN and protect each sudden change MIT device, at least one extra sudden change MIT device can be parallel-connected to the sudden change MIT device that has comprised.
In the embodiment of Fig. 7, be equal to or greater than with the corresponding high-voltage noise of total deboost of the deboost summation of the MIT device that suddenlys change and adopt the sudden change MIT device of connecting to eliminate.In other words, be applied to for example electric and/or electronic system Z of high-voltage switch gear by power transmission line or high-voltage line L1 when the high-voltage noise that is equal to or greater than predetermined voltage LThe time, the most of electric current that is produced by this high pressure passes through sudden change MIT device by bypass, protects electric thus and/or electronic system Z L
Although the deboost of each sudden change MIT device is low, total the deboost of sudden change MIT device is because being connected in series and can raising between the sudden change MIT device.Therefore, set the deboost that requires, can make electric and/or electronic system Z LExempt from the voltage disturbance that is equal to or higher than this deboost.To describe in more detail in the back with reference to figure 10A-10E by the electrology characteristic that being connected in parallel of sudden change MIT device produces.
Fig. 8 is the circuit diagram that high-voltage noise is eliminated circuit 4000 that comprises according to another embodiment of the invention, and this high-voltage noise is eliminated circuit 4000 and comprised a plurality of sudden change MIT device chains, that is, and and MITCHAIN to a n MIT CHAIN's.With reference to figure 8, high-voltage noise is eliminated circuit 4000 and is parallel-connected to electric and/or electronic system Z L, and comprise the first sudden change MIT device chain MIT CHAIN and the MIT device chain MIT CHAIN (that is second to the n MIT device chain MIT CHAIN) of another sudden change at least that is connected to the first sudden change MIT device chain.Each sudden change MIT device chain can be realized by a plurality of sudden change MIT devices that are connected in series mutually as the embodiment of Fig. 7.For instance, the first sudden change MIT device chain MIT CHAIN forms by n the sudden change MIT device of the MIT1 to MITn that is connected in series.
In the embodiment of Fig. 8, can be parallel-connected to the first sudden change MIT device chain by the sudden change MIT device chain that at least one is extra and prevent that overcurrent from flowing to the first sudden change MIT device chain.Although each sudden change MIT device chain can be realized by forming sudden change MIT device MIT1 to MITn earlier separately and subsequently they being connected in series mutually, realize but also can form a plurality of sudden change MIT structures as the embodiment of Fig. 5 and 6 on substrate.
Being connected in parallel between the sudden change MIT device chain can realize by be connected in parallel on two surfaces of substrate 2000 as the embodiment of Fig. 6 the first and second sudden change MIT device chains 2700 and 2700a.Sudden change MIT device chain more than 3 if desired, can by on two surfaces of substrate, form two dimension sudden change MIT structure and with these sudden changes MIT structure suitably electrical interconnection realize.
Fig. 9 is the circuit diagram that high-voltage noise is eliminated circuit 5000 that comprises according to another embodiment of the invention, and this high-voltage noise is eliminated circuit 5000 and comprised sudden change MIT device chain.With reference to figure 9, high-voltage noise is eliminated circuit 5000 and is parallel-connected to electric and/or electronic system Z L, and comprise the first sudden change MIT device chain that obtains by the sudden change MIT device MIT1 to MITn that is connected in series.High-voltage noise is eliminated circuit 5000 and is similar to high-voltage noise elimination circuit 3000, is used for protection sudden change MIT device MIT1 to MITn except sudden change MIT device MIT1 to MITn comprises protective resistance R1 to Rn.Protective resistance R1 to Rn is connected in series to sudden change MIT device MIT1 to MITn; and total deboost can be reduced to the voltage of requirement, and protection sudden change MIT device MIT1 to MITn exempts from by the little limiting resistance of sudden change MIT device MIT1 to MITn or applies may damaging that excessive voltage causes.
For instance, when needing protection electric and/or electronic system Z LWhen exempting from voltage and being equal to or greater than the high-voltage noise of 10kV and not having protective resistance, total deboost of the deboost sum of sudden change MIT device MIT1 to MITn is necessary for 10kV.On the other hand, when having protective resistance, the voltage that applies is distributed on the protective resistance, and also it doesn't matter so total deboost is lower than 10kV.Therefore, the number of required sudden change MIT device can reduce.
Figure 10 A is the curve chart that experimental result of the present invention is shown to 10E, that is, be included in according to high-voltage noise of the present invention and eliminate the electrology characteristic that the sudden change MIT device in the circuit is connected in series and produces.From experiment of the present invention as can be seen, how the total deboost that obtains that is connected in series by sudden change MIT device changes.The sudden change MIT device that uses in the experiment is the planar-type abrupt MIT device of Fig. 2 A and 2B.
Figure 10 A illustrates the deboost of sudden change MIT device 1, and wherein distance ' the d ' between the first and second electrode film 410a and the 420a is 20 μ m, and width ' w ' of the first and second electrode film 410a and 420a is 40 μ m, at Al 2O 3Thin film 300a on the substrate 100 is by vanadium oxide VO 2Form.Sudden change MIT device 1 has experienced by the sudden change of insulator to metal, shown in reference letter A at 17.6V.In other words, when the voltage of about 17.6V was applied between first, second electrode film 410a, the 420a, the electric current of generation increased suddenly, i.e. A.Therefore, the deboost of sudden change MIT device 1 is 17.6V.
Figure 10 B illustrates the deboost of sudden change MIT device 2, wherein distance ' the d ' between first, second electrode film 410a, the 420a is 20 μ m, width ' w ' of first, second electrode film 410a, 420a is 50 μ m, and thin film 300a and substrate 100 are respectively by VO 2And Al 2O 3Form, as sudden change MIT device 1.Sudden change MIT device 2 experiences by the sudden change of insulator to metal, shown in reference letter B at 16V.Therefore, the deboost of sudden change MIT device 2 is 16V.Because the width ' w ' of sudden change MIT device 2 is greater than the width ' w ' of sudden change MIT device 1, the electric field that forms in the sudden change MIT device 2 is big, can predict that therefore the deboost of sudden change MIT device 2 is lower than the deboost of sudden change MIT device 1.
Figure 10 C illustrates the deboost of sudden change MIT device 3, wherein distance ' the d ' between first, second electrode film 410a, the 420a is 20 μ m, width ' w ' of first, second electrode film 410a, 420a is 100 μ m, and thin film 300a and substrate 100 are respectively by VO 2And Al 2O 3Form, as sudden change MIT device 1.Sudden change MIT device 3 experiences by the sudden change of insulator to metal, shown in reference letter C at 15V.Therefore, the deboost of sudden change MIT device 3 is 15V.
Figure 10 D illustrates the deboost of sudden change MIT device 4, wherein distance ' the d ' between first, second electrode film 410a, the 420a is 5 μ m, width ' w ' of first, second electrode film 410a, 420a is 100 μ m, and thin film 300a and substrate 100 are respectively by VO 2And Al 2O 3Form, as sudden change MIT device 1.Sudden change MIT device 4 experiences by the sudden change of insulator to metal, shown in reference letter D at 7.5V.Therefore, the deboost of sudden change MIT device 4 is 7.5V.
From Figure 10 A to 10D as can be seen deboost along with the distance ' d ' first, second electrode film 410a, the 420a significantly changes.This means that deboost depends on the top of the thin film 300a between first, second electrode film 410a, the 420a rather than the bottom of the thin film 300a between first, second electrode film 410a, 420a to a great extent.
Figure 10 E illustrates the sudden change MIT device 1,2,3 that is connected in series mutually and total deboost of 4.In other words, measure the total deboost of the sudden change MIT device 1,2,3 be connected in series and 4 rather than the deboost of each sudden change MIT device 1,2,3 and 4.1,2,3 and 4 groups in the sudden change MIT device that is connected in series mutually in the 53V experience by the sudden change of insulator, shown in reference letter E to metal.Therefore, total deboost of 1,2,3 and 4 groups in sudden change MIT device is about 53V.Total deboost approximates the deboost sum of sudden change MIT device 1,2,3 and 4, that is, and and 56.1V.The electric field influence that measure error, adjacent abrupt MIT device produce etc. all can be thought error component.
The sudden change MIT device 1,2,3 that is connected in series and total deboost of 4 equal the to suddenly change phenomenon of deboost sum of MIT device 1,2,3 and 4 can be explained as follows.In other words, when the voltage that applies during less than total deboost, each sudden change MIT device is as high-resistance resistor, and the voltage that applies is according to depending on that the voltage regularity of distribution that is connected in series between the resistor is distributed to sudden change MIT device 1,2,3 and 4.The voltage that distributes is lower than the deboost of each MIT device 1,2,3 and 4.On the other hand, when the voltage that applies was equal to or greater than total deboost, the voltage that applies was distributed to sudden change MIT device 1,2,3 and 4.The voltage that distributes equals or about the deboost of each MIT device 1,2,3 and 4.Therefore, all become MIT device 1,2,3 and 4 experience MIT.
Even by having experimental results show that when the deboost of a sudden change MIT device hangs down, high-voltage noise also can be by the sudden change MIT device and effective elimination of the low restriction voltage of having of the suitable number that is connected in series.For instance, if the high-voltage noise of 2kV need be eliminated from the high-voltage line of 1kV, voltage is equal to or higher than the high-voltage noise of 2kV and can eliminates by the sudden change MTI device that 7 or 8 deboosts that are connected in series are 200V.Therefore, rated voltage or rated signal can be transmitted with being stabilized.
If electric and/or electronic system is damaged more than predetermined voltage; be lower than predetermined voltage rather than make total deboost of sudden change MIT device equal predetermined voltage by the total deboost that makes sudden change MIT device, then can protect this electric and/or electronic system safely.This also is a reason of not using 10 sudden change MIT devices why in the above in the example.
From above-described experiment as can be seen, can have the sudden change MIT device of low restriction voltage by being connected in series and MIT takes place when superhigh pressure, and not need to form sudden change MIT device with deboost consistent with superhigh pressure.This advantage can overcome the problem that can't make the wide thin film that can make sudden change MIT confront super-high voltage noise.
Industrial usability
Therefore, be applicable to that each high-voltage noise elimination circuit electric and/or electronic system can fully be connected to each other to design by structure and material and the MIT device that will suddenly change of regulating suitably sudden change MIT device.
Comprising a plurality of sudden change MIT devices on the single substrate according to sudden change according to the present invention MIT device, is favourable from forming suddenly change series connection between the MIT device and the angle of the technology that is connected in parallel of a plurality of sudden change MIT devices and these therefore.
In addition, eliminate circuit according to high-voltage noise of the present invention and use the sudden change MIT device that is connected in series, therefore effectively eliminate high-voltage noise far above the deboost of each sudden change MIT device.The sudden change MIT device that is connected in series can be realized easily by a plurality of sudden change MIT structures and contact wire that use is formed on the single substrate.
High-voltage noise is eliminated circuit can be effectively applied to electric and/or electronic system to be protected; for example, supply of electric power, rectified current subassembly and other Electrical and Electronic parts and the system of high-tension bus-bar, high-tension electricity assembly, home interrupter switches (being fuse box), high-voltage switch gear, relay, buzzer, electronic unit, electronic system.
Though at length illustrate and described the present invention with reference to one exemplary embodiment of the present invention, it should be appreciated by those skilled in the art, can in not breaking away from disclosed spirit of the present invention of claim and category, carry out the variation of various forms and details.

Claims (34)

1. abrupt metal-insulator transition device comprises:
Substrate; And
Be respectively formed at the upper and lower lip-deep first abrupt metal-insulator transition structure and the second abrupt metal-insulator transition structure of described substrate, wherein each described first and second abrupt metal-insulator transition structure has the insulator characteristic when being lower than predetermined deboost, and has metallic character when being equal to or higher than described deboost.
2. abrupt metal-insulator transition device according to claim 1, wherein each described first and second abrupt metal-insulator transition structure comprises:
The abrupt metal-insulator transition film; With
Contact the two-layer at least electrode film of described abrupt metal-insulator transition film.
3. abrupt metal-insulator transition device according to claim 2, wherein said abrupt metal-insulator transition film is formed by at least a material that is selected from following group: added low-concentration holes inorganic semiconductor, added the inorganic insulator of low-concentration holes, the organic insulator that has added the organic semiconductor of low-concentration holes and added low-concentration holes, wherein every kind of above-mentioned material comprises oxygen, carbon, comprises at least a in semiconductor element, transition metal, rare earth element and the lanthanide series of III-V family and II-VI family.
4. abrupt metal-insulator transition device according to claim 2, wherein said abrupt metal-insulator transition film is formed by the semiconductor that has added low-concentration holes, and the wherein above-mentioned semi-conducting material that has added low-concentration holes comprises oxygen, carbon, comprise at least a in semiconductor element, transition metal, rare earth element and the lanthanide series of III-V family and II-VI family.
5. abrupt metal-insulator transition device according to claim 2, wherein said abrupt metal-insulator transition film is formed by at least a material that is selected from following group: the oxide-insulator that has added the oxide semiconductor of low-concentration holes and added low-concentration holes, wherein every kind of above-mentioned material comprises oxygen, carbon, comprises at least a in semiconductor element, transition metal, rare earth element and the lanthanide series of III-V family and II-VI family.
6. abrupt metal-insulator transition device according to claim 2, wherein said abrupt metal-insulator transition film is formed by n N-type semiconductor N-insulator.
7. abrupt metal-insulator transition device according to claim 2, wherein said abrupt metal-insulator transition film is formed by at least a material that is selected from following group: W, Mo, W/Au, Mo/Au, Cr/Au, Ti/W, Ti/Al/N, Ni/Cr, Al/Au, Pt, Cr/Mo/Au, YB 2Cu 3O 7-d, Ni/Au, Ni/Mo, Ni/Mo/Au, Ni/Mo/Ag, Ni/Mo/Al, Ni/W, Ni/W/Au, Ni/W/Ag and Ni/W/Al.
8. abrupt metal-insulator transition device according to claim 1, wherein:
The described first abrupt metal-insulator transition structure comprises:
Be formed on the abrupt metal-insulator transition film on the upper surface of described substrate;
Be formed on the exposed portions serve of upper surface of described substrate and cover a side of described abrupt metal-insulator transition film and first electrode film of the part of the upper surface of described abrupt metal-insulator transition film; With
Be formed on the residue exposed portions serve of upper surface of described substrate and cover another side of described abrupt metal-insulator transition film and the part of the upper surface of described abrupt metal-insulator transition film, thereby in the face of second electrode film of described first electrode film; And
The described second abrupt metal-insulator transition structure comprises:
Be formed on the abrupt metal-insulator transition film on the lower surface of described substrate;
Be formed on the exposed portions serve of lower surface of described substrate and cover a side of described abrupt metal-insulator transition film and first electrode film of the part of the lower surface of described abrupt metal-insulator transition film; With
Be formed on the residue exposed portions serve of lower surface of described substrate and cover another side of described abrupt metal-insulator transition film and the part of the lower surface of described abrupt metal-insulator transition film, thereby in the face of second electrode film of described first electrode film.
9. abrupt metal-insulator transition device according to claim 1, wherein:
The described first abrupt metal-insulator transition structure comprises:
Be formed on first electrode film on the upper surface of described substrate;
Be formed on the abrupt metal-insulator transition film on the upper surface of described first electrode film; With
Be formed on second electrode film on the upper surface of described abrupt metal-insulator transition film; And
The described second abrupt metal-insulator transition structure comprises:
Be formed on first electrode film on the lower surface of described substrate;
Be formed on the abrupt metal-insulator transition film on the lower surface of described first electrode film; With
Be formed on second electrode film on the lower surface of described abrupt metal-insulator transition film.
10. abrupt metal-insulator transition device according to claim 8, wherein said abrupt metal-insulator transition device comprises:
The first abrupt metal-insulator transition device chain that comprises a plurality of first abrupt metal-insulator transition structures on the upper surface that is formed on described substrate; With
The second abrupt metal-insulator transition device chain that comprises a plurality of second abrupt metal-insulator transition structures on the lower surface that is formed on described substrate.
11. abrupt metal-insulator transition device according to claim 10, the first abrupt metal-insulator transition structure of the wherein said first abrupt metal-insulator transition device chain is connected in series mutually by the series connection contact wire that is formed between them, and the second abrupt metal-insulator transition structure of the described second abrupt metal-insulator transition device chain is connected in series mutually by another series connection contact wire that is formed between them.
12. abrupt metal-insulator transition device according to claim 11, the wherein said first and second abrupt metal-insulator transition device chains are connected in parallel mutually by the contact wire in parallel that penetrates described substrate.
13. abrupt metal-insulator transition device according to claim 1, wherein said substrate is by being selected from Si, SiO 2, GaAs, Al 2O 3, plastics, glass, V 2O 5, PrBa 2Cu 3O 7, YBa 2Cu 3O 7, MgO, SrTiO 3, the SrTiO that Nb mixes 3, and the group that forms of silicon-on-insulator (SOI) at least a material form.
14. abrupt metal-insulator transition device according to claim 1 also comprises the upper and lower lip-deep resilient coating that is formed on substrate.
15. abrupt metal-insulator transition device according to claim 14, wherein each described resilient coating comprises SiO 2Film and Si 3N 4One of film.
16. an abrupt metal-insulator transition device comprises:
Substrate; And
Be included in the abrupt metal-insulator transition device chain of at least two abrupt metal-insulator transition structures separated from one another on the described substrate, wherein each described abrupt metal-insulator transition structure comprises abrupt metal-insulator transition film and the two-layer at least electrode film that contacts described abrupt metal-insulator transition film.
17. abrupt metal-insulator transition device according to claim 16, the abrupt metal-insulator transition structure of wherein said abrupt metal-insulator transition device chain is connected in series mutually by the series connection contact wire that is formed on described substrate between them.
18. a high-voltage noise that comprises the abrupt metal-insulator transition device chain that is parallel-connected to electric and/or electronic system to be protected is eliminated circuit; wherein said abrupt metal-insulator transition device chain comprises at least two abrupt metal-insulator transition devices that are connected in series mutually; and each described abrupt metal-insulator transition device has the insulator characteristic when being lower than predetermined deboost, have metallic character when being equal to or higher than described deboost.
19. high-voltage noise according to claim 18 is eliminated circuit, also comprises at least one the abrupt metal-insulator transition device chain that is parallel-connected to described abrupt metal-insulator transition device chain.
20. high-voltage noise according to claim 18 is eliminated circuit, also comprises at least one abrupt metal-insulator transition device that is parallel-connected to each described abrupt metal-insulator transition device.
21. high-voltage noise according to claim 18 is eliminated circuit, wherein each described abrupt metal-insulator transition device comprises the protective resistance that is used to protect each described abrupt metal-insulator transition device.
22. high-voltage noise according to claim 18 is eliminated circuit, wherein said abrupt metal-insulator transition device chain has and the corresponding total deboost of the deboost sum of described abrupt metal-insulator transition device, and the high-voltage noise that voltage is equal to or greater than described total deboost is eliminated.
23. a high-voltage noise that comprises the abrupt metal-insulator transition device that is parallel-connected to electric and/or electronic system to be protected is eliminated circuit, comprising: substrate and the abrupt metal-insulator transition device chain that obtains by at least two the abrupt metal-insulator transition structures that are connected in series.
24. high-voltage noise according to claim 23 is eliminated circuit, also comprises at least one the abrupt metal-insulator transition device chain that is parallel-connected to described abrupt metal-insulator transition device chain.
25. high-voltage noise according to claim 23 is eliminated circuit, wherein each described abrupt metal-insulator transition structure comprises:
The abrupt metal-insulator transition film; With
Contact the two-layer at least electrode film of described abrupt metal-insulator transition film.
26. high-voltage noise according to claim 23 is eliminated circuit, the abrupt metal-insulator transition structure of wherein said abrupt metal-insulator transition device chain is connected in series mutually by the series connection contact wire on the upper surface that is formed on described substrate.
27. high-voltage noise according to claim 23 is eliminated circuit, wherein said abrupt metal-insulator transition device chain comprises:
Be formed on the first abrupt metal-insulator transition device chain on the upper surface of described substrate, comprise at least two abrupt metal-insulator transition structures that are connected in series mutually; With
Be formed on the second abrupt metal-insulator transition device chain on the lower surface of described substrate, comprise at least two abrupt metal-insulator transition structures that are connected in series mutually.
28. high-voltage noise according to claim 27 is eliminated circuit, wherein:
The abrupt metal-insulator transition structure of the described first abrupt metal-insulator transition device chain is connected in series mutually by the series connection contact wire on the upper surface that is formed on described substrate; With
The abrupt metal-insulator transition structure of the described second abrupt metal-insulator transition device chain is connected in series mutually by another series connection contact wire on the lower surface that is formed on described substrate.
29. high-voltage noise according to claim 28 is eliminated circuit, the wherein said first and second abrupt metal-insulator transition device chains are connected in parallel mutually by the contact wire in parallel that penetrates described substrate.
30. an electric and/or electronic system comprises:
Electric and/or electronic system to be protected; With
The high-voltage noise that comprises the abrupt metal-insulator transition device chain that is parallel-connected to described electric and/or electronic system to be protected is eliminated circuit; described abrupt metal-insulator transition device chain obtains by at least two abrupt metal-insulator transition devices that are connected in series mutually; wherein each described abrupt metal-insulator transition device has the insulator characteristic when being lower than predetermined deboost, and has metallic character when being equal to or higher than described deboost.
31. electric and/or electronic system according to claim 30, wherein said high-voltage noise are eliminated circuit and are also comprised at least one the abrupt metal-insulator transition device chain that is parallel-connected to described abrupt metal-insulator transition device chain.
32. electric and/or electronic system according to claim 30, wherein each described abrupt metal-insulator transition device comprises the protective resistance that is used to protect each described abrupt metal-insulator transition device.
33. electric and/or electronic system according to claim 30, wherein said abrupt metal-insulator transition device chain has and the corresponding total deboost of the deboost sum of described abrupt metal-insulator transition device, and the high-voltage noise that voltage is equal to or greater than described total deboost is eliminated.
34. electric and/or electronic system according to claim 30, wherein said electric and/or electronic system are the high-voltage switch gears that stops high pressure.
CN2006800363846A 2005-07-29 2006-04-05 Abrupt metal-insulator transition device, circuit and electrical and/or electronic system Expired - Fee Related CN101278454B (en)

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