CN101268552B - 减少来自红外辐射的图像伪影的背面硅晶片设计 - Google Patents
减少来自红外辐射的图像伪影的背面硅晶片设计 Download PDFInfo
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- CN101268552B CN101268552B CN2006800348371A CN200680034837A CN101268552B CN 101268552 B CN101268552 B CN 101268552B CN 2006800348371 A CN2006800348371 A CN 2006800348371A CN 200680034837 A CN200680034837 A CN 200680034837A CN 101268552 B CN101268552 B CN 101268552B
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- Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/195,687 US7576361B2 (en) | 2005-08-03 | 2005-08-03 | Backside silicon wafer design reducing image artifacts from infrared radiation |
US11/195,687 | 2005-08-03 | ||
PCT/US2006/029299 WO2007019073A2 (en) | 2005-08-03 | 2006-07-27 | Backside silicon wafer design reducing image artifacts from infrared radiation |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101268552A CN101268552A (zh) | 2008-09-17 |
CN101268552B true CN101268552B (zh) | 2010-12-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800348371A Expired - Fee Related CN101268552B (zh) | 2005-08-03 | 2006-07-27 | 减少来自红外辐射的图像伪影的背面硅晶片设计 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7576361B2 (zh) |
EP (1) | EP1929527A2 (zh) |
JP (1) | JP2009503898A (zh) |
KR (1) | KR100983439B1 (zh) |
CN (1) | CN101268552B (zh) |
TW (1) | TWI324824B (zh) |
WO (1) | WO2007019073A2 (zh) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5010244B2 (ja) * | 2005-12-15 | 2012-08-29 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
DE102007057089B4 (de) * | 2006-12-22 | 2010-04-29 | Lg Display Co., Ltd. | Flüssigkristallanzeige mit Photosensor und Herstellungsverfahren derselben |
FR2914488B1 (fr) * | 2007-03-30 | 2010-08-27 | Soitec Silicon On Insulator | Substrat chauffage dope |
JP5301108B2 (ja) * | 2007-04-20 | 2013-09-25 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
JP2009032929A (ja) * | 2007-07-27 | 2009-02-12 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
US8257997B2 (en) * | 2007-10-17 | 2012-09-04 | Sifotonics Technologies (Usa) Inc. | Semiconductor photodetectors |
US20090127643A1 (en) * | 2007-11-19 | 2009-05-21 | Huo-Tieh Lu | Photodiode of an image sensor and fabricating method thereof |
US20090146234A1 (en) * | 2007-12-06 | 2009-06-11 | Micron Technology, Inc. | Microelectronic imaging units having an infrared-absorbing layer and associated systems and methods |
US8003425B2 (en) * | 2008-05-14 | 2011-08-23 | International Business Machines Corporation | Methods for forming anti-reflection structures for CMOS image sensors |
US7759755B2 (en) * | 2008-05-14 | 2010-07-20 | International Business Machines Corporation | Anti-reflection structures for CMOS image sensors |
US20100026824A1 (en) * | 2008-07-29 | 2010-02-04 | Shenlin Chen | Image sensor with reduced red light crosstalk |
JP5150566B2 (ja) * | 2009-06-22 | 2013-02-20 | 株式会社東芝 | 半導体装置およびカメラモジュール |
JP5482025B2 (ja) * | 2009-08-28 | 2014-04-23 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
US9911781B2 (en) * | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
JP5961332B2 (ja) | 2009-09-17 | 2016-08-02 | サイオニクス、エルエルシー | 感光撮像素子および関連方法 |
US20110068423A1 (en) * | 2009-09-18 | 2011-03-24 | International Business Machines Corporation | Photodetector with wavelength discrimination, and method for forming the same and design structure |
US8466000B2 (en) | 2011-04-14 | 2013-06-18 | United Microelectronics Corp. | Backside-illuminated image sensor and fabricating method thereof |
US20130010165A1 (en) | 2011-07-05 | 2013-01-10 | United Microelectronics Corp. | Optical micro structure, method for fabricating the same and applications thereof |
US9312292B2 (en) | 2011-10-26 | 2016-04-12 | United Microelectronics Corp. | Back side illumination image sensor and manufacturing method thereof |
US8318579B1 (en) | 2011-12-01 | 2012-11-27 | United Microelectronics Corp. | Method for fabricating semiconductor device |
US8815102B2 (en) | 2012-03-23 | 2014-08-26 | United Microelectronics Corporation | Method for fabricating patterned dichroic film |
US9401441B2 (en) | 2012-06-14 | 2016-07-26 | United Microelectronics Corporation | Back-illuminated image sensor with dishing depression surface |
US8779344B2 (en) | 2012-07-11 | 2014-07-15 | United Microelectronics Corp. | Image sensor including a deep trench isolation (DTI)that does not contact a connecting element physically |
US9111832B2 (en) * | 2012-10-29 | 2015-08-18 | Omnivision Technologies,Inc. | Infrared reflection/absorption layer for reducing ghost image of infrared reflection noise and image sensor using the same |
US8828779B2 (en) | 2012-11-01 | 2014-09-09 | United Microelectronics Corp. | Backside illumination (BSI) CMOS image sensor process |
US8779484B2 (en) | 2012-11-29 | 2014-07-15 | United Microelectronics Corp. | Image sensor and process thereof |
US9279923B2 (en) | 2013-03-26 | 2016-03-08 | United Microelectronics Corporation | Color filter layer and method of fabricating the same |
US9537040B2 (en) | 2013-05-09 | 2017-01-03 | United Microelectronics Corp. | Complementary metal-oxide-semiconductor image sensor and manufacturing method thereof |
US9129876B2 (en) | 2013-05-28 | 2015-09-08 | United Microelectronics Corp. | Image sensor and process thereof |
WO2014199583A1 (ja) * | 2013-06-10 | 2014-12-18 | パナソニックIpマネジメント株式会社 | 赤外線センサ |
US9054106B2 (en) | 2013-11-13 | 2015-06-09 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
US9841319B2 (en) | 2013-11-19 | 2017-12-12 | United Microelectronics Corp. | Light detecting device |
CN105428376A (zh) * | 2014-09-12 | 2016-03-23 | 芯视达系统公司 | 具有可见光及紫外光探测功能的单芯片影像传感器及其探测方法 |
JP2018133392A (ja) * | 2017-02-14 | 2018-08-23 | キヤノン株式会社 | 光電変換装置 |
CN108346674B (zh) * | 2018-01-30 | 2019-01-18 | 武汉新芯集成电路制造有限公司 | 半导体硅晶片的制备方法、硅晶片及图像传感器 |
US10608039B1 (en) * | 2018-10-02 | 2020-03-31 | Foveon, Inc. | Imaging arrays having focal plane phase detecting pixel sensors |
US10991746B2 (en) | 2018-10-29 | 2021-04-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | High performance image sensor |
US11022757B1 (en) * | 2019-11-26 | 2021-06-01 | Cisco Technology, Inc. | Using an anti-reflection coating with a grating coupler |
CN111223904B (zh) * | 2019-12-20 | 2023-04-18 | 京东方科技集团股份有限公司 | 显示面板及其制备方法、显示装置及其控制方法 |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3971065A (en) | 1975-03-05 | 1976-07-20 | Eastman Kodak Company | Color imaging array |
US4365259A (en) | 1978-11-21 | 1982-12-21 | Westinghouse Electric Corp. | Radiant energy sensor with reduced optical reflection and blooming |
US4697074A (en) | 1984-12-17 | 1987-09-29 | Sanyo Electric Co., Ltd. | Thermally improved photodetector having a roughened, recessed, raised or inclined light receiving surface |
US4789648A (en) | 1985-10-28 | 1988-12-06 | International Business Machines Corporation | Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias |
JPS63161667A (ja) | 1986-12-25 | 1988-07-05 | Nec Corp | 固体撮像素子 |
US4956313A (en) | 1987-08-17 | 1990-09-11 | International Business Machines Corporation | Via-filling and planarization technique |
JPH0294566A (ja) | 1988-09-30 | 1990-04-05 | Toshiba Corp | 固体撮像装置 |
US5244523A (en) | 1990-02-07 | 1993-09-14 | Tollini Dennis R | Bandage for replaceable dressing and method of fabrication thereof |
US5157876A (en) | 1990-04-10 | 1992-10-27 | Rockwell International Corporation | Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing |
US5137544A (en) | 1990-04-10 | 1992-08-11 | Rockwell International Corporation | Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing |
US5209816A (en) | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
US5225034A (en) | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
GB9301405D0 (en) | 1993-01-25 | 1993-03-17 | Philips Electronics Uk Ltd | An image sensor |
US5391258A (en) | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US5340370A (en) | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
US5471515A (en) | 1994-01-28 | 1995-11-28 | California Institute Of Technology | Active pixel sensor with intra-pixel charge transfer |
US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
WO1997039487A1 (en) * | 1996-04-12 | 1997-10-23 | Polaroid Corporation | High-definition television progressive-scan broadcast camera |
US5993686A (en) | 1996-06-06 | 1999-11-30 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
US6033596A (en) | 1996-09-24 | 2000-03-07 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US5783489A (en) | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US6039891A (en) | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
US5958288A (en) | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
US5954997A (en) | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
JP3828982B2 (ja) | 1997-04-14 | 2006-10-04 | 三菱電機株式会社 | 半導体受光素子 |
US6753584B1 (en) | 1997-08-21 | 2004-06-22 | Micron Technology, Inc. | Antireflective coating layer |
US6121143A (en) | 1997-09-19 | 2000-09-19 | 3M Innovative Properties Company | Abrasive articles comprising a fluorochemical agent for wafer surface modification |
US6063306A (en) | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
US6420691B1 (en) * | 1998-07-08 | 2002-07-16 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Charge-coupled device for low background observations |
US6444588B1 (en) | 1999-04-26 | 2002-09-03 | Micron Technology, Inc. | Anti-reflective coatings and methods regarding same |
US6175442B1 (en) * | 1999-05-25 | 2001-01-16 | Intel Corporation | Anti-reflection layer in spatial light modulators |
US6376868B1 (en) | 1999-06-15 | 2002-04-23 | Micron Technology, Inc. | Multi-layered gate for a CMOS imager |
US6333205B1 (en) | 1999-08-16 | 2001-12-25 | Micron Technology, Inc. | CMOS imager with selectively silicided gates |
AU2001233290A1 (en) | 2000-02-22 | 2001-09-03 | Brewer Science, Inc. | Organic polymeric antireflective coatings deposited by chemical vapor deposition |
JP2002026371A (ja) * | 2000-07-10 | 2002-01-25 | Sharp Corp | フォトダイオードおよび受光素子内蔵型集積回路 |
JP4489319B2 (ja) | 2001-04-26 | 2010-06-23 | 富士通マイクロエレクトロニクス株式会社 | 固体撮像装置 |
TW576859B (en) | 2001-05-11 | 2004-02-21 | Shipley Co Llc | Antireflective coating compositions |
US6713404B2 (en) | 2002-03-05 | 2004-03-30 | Micron Technology, Inc. | Methods of forming semiconductor constructions |
US6783900B2 (en) | 2002-05-13 | 2004-08-31 | Micron Technology, Inc. | Color filter imaging array and method of formation |
JP4313990B2 (ja) | 2002-07-02 | 2009-08-12 | シャープ株式会社 | 固体撮像装置 |
US6972827B2 (en) * | 2003-12-19 | 2005-12-06 | Eastman Kodak Company | Transflective film and display |
-
2005
- 2005-08-03 US US11/195,687 patent/US7576361B2/en active Active
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2006
- 2006-07-27 EP EP06788721A patent/EP1929527A2/en not_active Withdrawn
- 2006-07-27 KR KR1020087005293A patent/KR100983439B1/ko active IP Right Grant
- 2006-07-27 WO PCT/US2006/029299 patent/WO2007019073A2/en active Application Filing
- 2006-07-27 JP JP2008525044A patent/JP2009503898A/ja not_active Withdrawn
- 2006-07-27 CN CN2006800348371A patent/CN101268552B/zh not_active Expired - Fee Related
- 2006-08-03 TW TW095128433A patent/TWI324824B/zh active
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US20070031988A1 (en) | 2007-02-08 |
US7576361B2 (en) | 2009-08-18 |
KR20080032004A (ko) | 2008-04-11 |
WO2007019073A3 (en) | 2008-01-03 |
TWI324824B (en) | 2010-05-11 |
JP2009503898A (ja) | 2009-01-29 |
EP1929527A2 (en) | 2008-06-11 |
WO2007019073A2 (en) | 2007-02-15 |
KR100983439B1 (ko) | 2010-09-24 |
CN101268552A (zh) | 2008-09-17 |
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