CN101208777B - Ion implanting methods - Google Patents
Ion implanting methods Download PDFInfo
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- CN101208777B CN101208777B CN2006800227358A CN200680022735A CN101208777B CN 101208777 B CN101208777 B CN 101208777B CN 2006800227358 A CN2006800227358 A CN 2006800227358A CN 200680022735 A CN200680022735 A CN 200680022735A CN 101208777 B CN101208777 B CN 101208777B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
Abstract
An ion implanting method includes forming a pair of spaced and adjacent features projecting outwardly from a substrate. At least outermost portions of the pair of spaced features are laterally pulled away from one another with a patterned photoresist layer received over the features and which has an opening therein received intermediate the pair of spaced features. While such spaced features are laterally pulled, a species is ion implanted into substrate material which is received lower than the pair of spaced features. After the ion implanting, the patterned photoresist layer is removed from the substrate. Other aspects and implementations are contemplated.
Description
Technical field
The present invention relates to ion implants.
Background technology
It is a kind of so as to material being incorporated into the method in the substrate that ion is implanted.High energy charge atom or molecule can be implanted in the outer surface region of substrate and/or substrate interior than the depths, this depends on the driving energy of giving described atom or molecule.In a kind of typical case used, ion was implanted and will be strengthened conductive dopant ion and be incorporated in Semiconductor substrate (for example crystalline silicon) surface and make it pass semiconductor substrate surface.By selecting suitable implantation species, implant dosage and implantation energy, the skilled worker can form required district in substrate.
Many ion embedding technologies will be implanted species from the direction of/quadrature vertical with the cardinal principle/global orientation of substrate and be driven into the substrate.Yet, in some cases, need to form at least in part and to be formed at the structure above the substrate or the implantation region of received beneath.In order to finish described operation, can depart from a certain angle with quadrature and carry out the ion implantation, below the structure/feature outstanding, admit the implantation region at least in part whereby from substrate.Yet the trend that semiconductor integrated circuit is made industry is to make feature become longer and more close.This can get rid of or reduce at least angled ion implantation method effectively can effectively provide the degree in the implantation region of received beneath.
Although motivation of the present invention is to solve the problem of above pointing out, it is in no way limited to this.The present invention only by as the appended claims restriction word for word described, and not to making an explanation property of specification or other restricted reference, and according to the principle of equivalent.
Summary of the invention
The present invention includes the different kinds of ions method for implantation.In one embodiment, a kind of ion implantation method comprises that formation is a pair of from outside outstanding interval of substrate and adjacent feature.Described outermost portion at least to spaced features laterally is pulled away from each other, and wherein admitting above described feature has patterning photoresist layer, and have in the described patterning photoresist layer be received in described to the opening in the middle of the spaced features., the species ion is implanted to be received to is lower than in the described backing material by in the horizontal tractive at this type of spaced features spaced features.After ion is implanted, from described substrate removal patterning photoresist layer.
In one embodiment, a kind of ion implantation method comprises that formation is a pair of from outside outstanding interval of substrate and adjacent feature.Determine first group of photoresist processing parameter, it will cause first lateral separation of described outermost portion to feature after forming patterning photoresist layer (wherein having the opening that is received in the middle of the described feature) above the feature.Use second group of photoresist processing parameter to come to form patterning photoresist layer above described feature, described second group of photoresist processing parameter causes second lateral separation of the outermost portion of described feature, and it is greater than described first lateral separation.In above patterning photoresist layer is positioned at feature, the species ion is implanted to be received to is lower than in the described backing material spaced features.After ion is implanted, from described substrate removal patterning photoresist layer.
In one embodiment, a kind of ion implantation method comprises that formation is from substrate outwards outstanding first, second and the 3rd feature.Described second feature is received in the middle of the described first and the 3rd feature.Inwardly towards the outermost portion at least of horizontal tractive first of second feature and the 3rd feature, wherein above first, second and the 3rd feature, admit patterning photoresist layer.Above second feature, all admit patterning photoresist layer, and described patterning photoresist layer bridge joint is between the first and the 3rd feature.Patterning photoresist layer laterally exposes the lateral wall of the first and the 3rd feature., the species ion is implanted in the backing material of and contiguous first feature and the 3rd feature laterally outside by in the horizontal tractive in the first and the 3rd feature, and described backing material is received to and is lower than the first and the 3rd feature in the first and the 3rd feature.After ion is implanted, from described substrate removal patterning photoresist layer.
Others of the present invention are also expected.
Description of drawings
Hereinafter the preferred embodiments of the present invention are described referring to the following drawings.
Fig. 1 is the diagram sectional view that is in the substrate fragment in the processing according to one aspect of the invention.
Fig. 2 is the view in Fig. 1 substrate fragment at treatment step shown in Figure 1 treatment step place subsequently.
Fig. 3 is the view in Fig. 2 substrate fragment at treatment step shown in Figure 2 treatment step place subsequently.
Fig. 4 is the view in Fig. 3 substrate fragment at treatment step shown in Figure 3 treatment step place subsequently.
Fig. 5 is the diagram sectional view that is in the alternate embodiment substrate fragment in the processing according to one aspect of the invention.
Fig. 6 is the vertical view of Fig. 5, and wherein Fig. 5 is that the line 5-5 that passes among Fig. 6 obtains.
Fig. 7 is the view in Fig. 5 substrate fragment at treatment step shown in Figure 5 treatment step place subsequently.
Fig. 8 is the view in Fig. 7 substrate fragment at treatment step shown in Figure 7 treatment step place subsequently.
Fig. 9 is the view in Fig. 8 substrate fragment at treatment step shown in Figure 8 treatment step place subsequently.
Embodiment
The first exemplary ion method for implantation of the each side according to the present invention is described referring to Fig. 1 to 4.Fig. 1 describes substrate fragment, and it is usually with reference number 10 indications.Described substrate fragment comprises substrate 12, and described substrate 12 has from its outwards outstanding series of features 13,14,15 and 16.Substrate 12 may comprise any material or combination of different materials, and in one embodiment, preferably comprises Semiconductor substrate.In the context of this document, term " Semiconductor substrate " or " semiconductive substrate " be defined as mean any structure that comprises semiconductive material, described semiconductive material includes but not limited to for example bulk semiconductive material of semiconductive wafer (form independent or that be the sub-assembly that comprises other material in the above) and semiconductive material layer (form independent or that be the sub-assembly that comprises other material).Term " substrate " refers to any supporting construction, includes but not limited to above-described semiconductive substrate.In addition, in the context of this document, term " layer " comprises singulative and plural form, unless indication is arranged in addition.In an exemplary embodiment, substrate 12 comprises bulk semiconductive material, for example the monocrystalline silicon of intrinsic doping.Alternate substrates expects also that certainly wherein covering Semiconductor substrate on the insulator is a kind of exemplary type.
For the purpose of continue discussing, focus on that feature 14 and 15 describes processing, it is a pair of from outwards outstanding intervals of substrate 12 and adjacent feature that described feature 14 and 15 can be considered in an exemplary embodiment.The processing that further describes herein is in conjunction with the common cross-section of at least one internal admission theme feature, and there is no need whole features of admitting with respect to above substrate 12.In the cross section of being described, described outermost portion to spaced features 14 and 15 can be considered and has lateral separation distance 25.In a preferred embodiment, described feature is had be at least 3.0 aspect ratio, and between it, have aspect ratio and be at least 3.0 interval (for example, the exemplary intervals of being described 31 in describing cross section).In addition, in a preferred embodiment, described feature is had be at least 4.0 aspect ratio, and between it, have aspect ratio and be at least 4.0 interval.
Referring to Fig. 2, described outermost portion to spaced features 14 and 15 laterally is pulled away from each other, wherein admitting above feature 14 and 15 has patterning photoresist layer 32, and wherein photoresist layer 32 has the opening 34 that is received in wherein described to spaced features 14 and 15 centres.In the context of this document, photoresist is any material that comprises light-sensitive compound, described light-sensitive compound makes described material can use solvent to carry out patterning or carry out other processing after photochemical energy exposure in response to being exposed to photochemical energy etc. and stand chemical reaction.Except photoresist, layer 32 also may comprise some materials/layer.In a preferred embodiment, patterning photoresist layer 32 comprises organic photoresist.
Utilization can be from Shin-Etsu Chemical Co., Ltd (6-1, Ohtemachi 2-chome, Chiyoda-ku; Tokyo 100-0004, the SEPR701 photoresist layer that specified 3,150 dusts of Japan) buying are thick tries out the present invention with above-mentioned exemplary preferred embodiment.This type of photoresist stands lasting 90 seconds of the post-exposure bake that 115 ℃ pre-exposure baked continues 90 seconds and 110 ℃.The size of the opening 34 in the photoresist layer 32 is 0.5 micron to 5 microns wide and 0.1 micron long to 100 microns through specified being chosen as in the cross section of being described.This cause depart from 6 ° with substrate 12 quadratures and locate (wherein showing quadratures) with numeral 40 with described to each the horizontal tractive in the feature.
Preferably, the horizontal tractive of described each in example features 14 and 15 is for to depart from 1 ° to 10 ° with the substrate quadrature, thinks that wherein departing from 5 ° to 8 ° scope with the substrate quadrature is more preferably.In addition, in an exemplary preferred embodiment, above all, admit patterning photoresist layer 32 in described each in feature 14 and 15.In the one exemplary embodiment of being described, described each in feature 14 and 15 about 50% above admit described patterning photoresist layer.The present invention also be expected at certainly in the described feature each be less than 50% top and described feature each more than 50% above admit patterning photoresist layer.Fig. 2 describes the lateral separation 35 that horizontal tractive causes the outermost portion of feature 14 and 15, and described lateral separation 35 is greater than lateral separation 25.
Referring to Fig. 3, and wherein spaced features 14 and 15 laterally is pulled away from each other, suitable species ion is implanted in the material of substrate 12, described substrate 12 through be received to be lower than described to spaced features 14 and 15.This is depicted as and forms exemplary diffusion region 38.In an exemplary embodiment, implant species and comprise the conductive dopant of enhancing, for example be implanted as 1 * 10
11Species/cm
2To 1 * 10
15Species/cm
2The boron or the arsenic of exemplary dosage.This type of ion is implanted can be substantially and the substrate quadrature, implant whereby species and district be received to be lower than described to spaced features 14 and 15, but when implanting, be not thereunder at least yet.Therefore, " being lower than " this does not require in the context of this document and is implanted under the feature.Yet, alternatively and according to overcoming facilitate problem of the present invention for preferably, carry out ion and implant to depart from a certain angle (that is), and therefore also when implanting, enter in some backing material that is received under feature 14 and 15 to depart from 1 ° to 10 ° with quadrature with the substrate quadrature.For instance, Fig. 3 describes exemplary arrow, its from orthogonal direction 40 and substrate 12 at an angle, and in the diffusion region of wherein being described 38 at least some are received in feature 14 and 15 belows at least in part.Therefore, in one embodiment, laterally the described topmost portion at least to spaced features of tractive provides and makes it possible to admit the backing material of feature 14 and 15 that angled ion takes place with respect to the top than large space and implant, and no matter implant species whether be received in prominent features under.Angle ion implant degree (if not the words of quadrature) can have the equal angular that is produced by tractive of described outermost portion to feature, maybe can have the angle that is greater than or less than this tractive angle.
Referring to Fig. 4, after implanting, ion removed patterning photoresist layer 32 from substrate 12.This type of removes can be by any technology that has now or wait to develop.A kind of exemplary prior art is by the oxygen plasma ashing.Usually and preferably, remove the lateral separation degree that patterning photoresist layer 32 will the lateral separation degree when admitting patterning photoresist layer 32 up begins to reduce the outermost portion of feature 14 and 15.This type of reduction of lateral separation degree may only be a part, or also may preferably reach the degree before forming patterning photoresist layer.Fig. 4 describes exemplary processes, whereby the lateral separation 25 of Fig. 1 has been got back in lateral separation 35 reductions of Fig. 2.Certainly, each side of the present invention also expects and do not reduce the lateral separation degree, and the lateral separation degree is reduced to and certain different value of initial value before forming photoresist.
The horizontal tractive of the outermost portion at least of adjacent spaces feature or further feature can take place by any method disclosed herein or by the method for developing subsequently.The factor of finding to influence the horizontal tractive degree of spaced features comprises the height of resist composition and spaced features.For instance, higher feature tends to cause higher horizontal tractive degree.In addition, the resist composition that tends to stand when after deposition all are handled higher shrinkage degree is compared with the resist composition that represents less shrinkage and is tended to cause big horizontal tractive.In addition and no matter feature height and resist composition, reduce pre-exposure baked temperature and/or pre-exposure baked time to tend to increase, and increase the horizontal tractive degree of adjacent spaces feature whereby with post-shrinkage ratio.In any case similarly and, increase post-exposure bake temperature and/or in the time at least one and tend to maximum shrinkage, and maximize the horizontal tractive of the outermost portion of adjacent spaces feature whereby.In any case in addition and, thicker photoresist layer with cause resist layer than glimmer and compare and trend towards big laterally tractive.
In aspect another consideration of the present invention, describe in conjunction with Fig. 1 as mentioned by means of example for instance and only, a kind of ion implantation method comprises that formation is from outside outstanding a pair of interval of substrate and adjacent feature.Determine first group of photoresist processing parameter, it will cause first lateral separation of described outermost portion to feature after forming patterning photoresist layer (wherein having the opening that is received in the middle of the described feature) above the feature.For instance and only by means of example, can determine first group of photoresist processing parameter, the first identical lateral separation of lateral separation when it causes the category feature therewith of described outermost portion to spaced features initially to form, or certain first lateral separation of the lateral separation when causing being greater than or less than spaced features and initially forming.This first group of photoresist processing parameter may comprise one or more combinations of photoresist layer thickness, pre-exposure processing, post-exposure processing etc., for example as described above.
Determine that this first group of photoresist processing parameter may take place in the following manner: form the photoresist layer above the substrate of described feature having, and measure the horizontal tractive degree (if any) that the processing parameter that passes through to be utilized produces.Described substrate may not be the sort of substrate that takes place above it with reprocessing, perhaps can be this type of substrate.Perhaps, can needn't require what substrate top in office to form under the situation of photoresist actually, determine described first group of processing parameter by computer or other modeling.
After this, use second group of photoresist processing parameter to form patterning photoresist layer above described feature, described second group of photoresist processing parameter causes second lateral separation of the outermost portion of described feature, and it is greater than described first lateral separation.Only, describe this situation in conjunction with Fig. 2 by means of example.In one embodiment, second group of photoresist processing parameter comprises the thickness of patterning photoresist layer, and it is greater than the thickness in first group of photoresist processing parameter.In one embodiment, second group of photoresist processing parameter comprises in the time at least one of pre-exposure baked temperature and pre-exposure baked, and it is less than pre-exposure baked temperature in first group of photoresist processing parameter and pre-exposure baked time.In one embodiment, second group of photoresist processing parameter comprises in the time at least one of post-exposure bake temperature and post-exposure bake, and it is greater than post-exposure bake temperature in first group of photoresist processing parameter and post-exposure bake time.Any parameter in this type of photoresist processing parameter of stating by different way of described first group and second group also can make up certainly.
In above patterning photoresist layer is positioned at feature, the species ion be implanted to be received to be lower than in the described backing material spaced features, for instance as showed and above describe in conjunction with Fig. 3.
After ion is implanted, remove patterning photoresist layer from substrate, for example as Fig. 4 showed and above-described.Usually and preferably, this type of of patterning photoresist layer removes the lateral separation degree that the lateral separation degree when admitting patterning photoresist layer above described feature is begun to reduce described outermost portion to feature.The other aspect of exemplary preferred process describes in conjunction with of the present invention first as mentioned that embodiment and aspect describe.
Another exemplary ion method for implantation of the many aspects according to the present invention is described referring to Fig. 5 to 9.Fig. 5 and 6 describes to comprise the substrate fragment 49 of substrate 50.Substrate 50 comprises semiconductive active region district 54 and electric insulation isolated area 56 between two parties, and the described isolated area of electric insulation between two parties 56 for example comprises one or more in silicon dioxide and the silicon nitride.A plurality of features 58,60,62,64 and 66 are shown as from substrate 50 and form and outwards give prominence to.In the one exemplary embodiment of being described, described feature comprises field effect transistor gate piles up, and it for example has those identical exemplary constructions and the sign of describing embodiment with first.Equally, described feature can have identical size and shape, or different aspect size and at least one of shape.In an exemplary preferred embodiment, described feature has and is at least 3.0 aspect ratio, and in another embodiment, has to be at least 4.0 aspect ratio.The separating distance that is right after between the adjacent feature can be identical or different with the width of institute depicted features.For the purpose of discussing continuously, feature 60,62 and 64 can be considered and comprises from outwards outstanding first, second of substrate 50 and the 3rd feature, and wherein second feature 62 to be received in first feature 60 middle with the 3rd feature 64.In one embodiment, feature 62 comprises dummy gate electrode." dummy gate electrode " but but be the gate line that does not form the operation part of function circuit in the context of this document, and described gate line can be during circuit operation ground connection or otherwise remain the non-current potential of operating.This can provide during the circuit production in order to promote to make the gate line of consistent shape and the interval between gate line.
Referring to Fig. 7, inwardly towards the outermost portion at least of second feature, 62 horizontal tractive first features 60 and the 3rd feature 64, wherein admitting respectively above first, second and the 3rd feature 60,62 and 64 has patterning photoresist layer 70.Patterning photoresist layer 70 preferably has and describes the identical attribute of attribute that embodiment describes with respect to photoresist layer 32 in conjunction with first.In addition, preferably, can describe as mentioned and handle like that to give described horizontal tractive.In the cross section of being described, patterning photoresist layer 70 is received within all tops of second feature 62, and bridge joint is between first feature 60 and the 3rd feature 64.In addition, patterning photoresist layer 70 laterally exposes the lateral wall 67 of first feature 60 and the 3rd feature 64.Preferably, the horizontal tractive of the outermost portion of each in the first and the 3rd feature is for to depart from 1 ° to 10 ° with the substrate quadrature, and wherein narrower preferable range is for to depart from 5 ° to 8 ° with the substrate quadrature.Patterning photoresist layer 70 preferably be accepted in first feature 60 and the 3rd feature 64 less than whole tops, as shown in the figure.This patterning photoresist layer may be accepted in the first and the 3rd feature each about 50% top, the first and the 3rd feature each be less than 50% top or the first and the 3rd feature each more than 50% top.Only by means of example, Fig. 7 describes each about 40% top that patterning photoresist layer 70 is accepted in the first and the 3rd feature.
Referring to Fig. 8, and when the first and the 3rd feature is patterned photoresist layer 70 horizontal tractive, the species ion has been implanted in the backing material of first feature 60 and the 3rd feature 64 horizontal outside and contiguous first features 60 and the 3rd feature 64, and described backing material is received to and is lower than first feature 60 and the 3rd feature 64, and then forms illustrated implantation region 75.Can carry out this type of ion orthogonally with substrate and implant, common whereby described implantation region will comprise that considerably less (if any) is received in the part under the first and the 3rd feature at least when implanting.Perhaps and more preferably, as shown in the figure, carry out ion and implant to depart from a certain angle, and and then be implanted in the backing material that is received in the first and the 3rd feature below with the substrate quadrature.Angle ion implant degree (if not the words of quadrature) can have the equal angular by the tractive generation of the outermost portion of feature 60 and 64, maybe can have the angle that is greater than or less than this tractive angle.For instance, implant and all preferably combine first as mentioned to describe embodiment described with quadrature or to depart from a certain angle with quadrature.
Referring to Fig. 9 and after ion is implanted, from substrate removal patterning photoresist layer 70 (not shown).Describe embodiment as first, this type of of patterning photoresist layer removes usually and preferably reduces the lateral separation degree of the outermost portion of the first and the 3rd feature and second feature.This type of reduction of lateral separation degree may only be a part, or reaches the degree before forming patterning photoresist layer fully.It is preferably described above to handle other aspect.
Claims (26)
1. ion implantation method, it comprises:
Formation is from outside outstanding a pair of interval of substrate and adjacent feature;
The patterning photoresist layer of the outermost portion at least by being positioned at described a pair of interval and adjacent feature laterally be pulled away from action, the described patterning photoresist layer that utilization is received in the top of described interval and adjacent feature laterally is pulled away from the outermost portion at least of described a pair of interval and adjacent feature each other, has the opening that is received in the middle of described a pair of interval and the adjacent feature in the described patterning photoresist layer;
, the species ion is implanted to is received in the backing material that is lower than described a pair of interval and adjacent feature by in the horizontal tractive in described interval and adjacent feature; And
After described ion is implanted, from the described patterning photoresist of described substrate removal layer.
2. method according to claim 1, wherein said interval and adjacent feature have identical size and shape.
3. method according to claim 1, wherein said interval and adjacent feature are different aspect at least one of size and shape.
4. method according to claim 1, wherein said interval and adjacent feature comprise field effect transistor gate piles up, and described piling up comprises gate dielectric, conductive layer and insulator cap.
5. method according to claim 1, the horizontal tractive and the described substrate quadrature of the outermost portion of each depart from 1 ° to 10 ° in wherein said interval and the adjacent feature.
6. method according to claim 5, the horizontal tractive and the described substrate quadrature of the outermost portion of each depart from 5 ° to 8 ° in wherein said interval and the adjacent feature.
7. method according to claim 1, removing of wherein said patterning photoresist layer, the degree that makes the lateral separation degree of outermost portion of described a pair of interval and adjacent feature be had when being accepted in described a pair of interval and adjacent feature top when described patterning photoresist layer begins to reduce.
8. method according to claim 7, the lateral separation degree with the outermost portion of described interval and adjacent feature of removing of wherein said patterning photoresist layer are reduced to the lateral separation degree that forms before the described patterning photoresist layer.
9. method according to claim 1 is wherein carried out described ion and is implanted to depart from an angle with described substrate quadrature, and is implanted in the backing material that is received in described a pair of interval and adjacent feature below.
10. method according to claim 9, wherein said angle ion implant degree equal the angle that departs from quadrature of the outermost portion of the described a pair of interval that produced by described horizontal tractive and adjacent feature.
11. method according to claim 9, wherein said angle ion implant degree is greater than the angle that departs from quadrature of the outermost portion of described a pair of interval that is produced by described horizontal tractive and adjacent feature.
12. method according to claim 9, wherein said angle ion implant degree is less than the angle that departs from quadrature of the outermost portion of described a pair of interval that is produced by described horizontal tractive and adjacent feature.
13. method according to claim 1, wherein described patterning photoresist layer is received in described a pair of interval and adjacent feature each top less than whole parts.
14. method according to claim 13 wherein is received in described patterning photoresist layer 50% part of each top of described a pair of interval and adjacent feature.
15. method according to claim 13, wherein described patterning photoresist layer is received in described a pair of interval and adjacent feature each top be less than 50% part.
16. method according to claim 13, wherein described patterning photoresist layer is received in described a pair of interval and adjacent feature each top more than 50% part.
17. an ion implantation method, it comprises:
Formation is from outside outstanding a pair of interval of substrate and adjacent feature;
The patterning photoresist layer that utilization is received in described interval and adjacent feature top laterally is pulled away from the outermost portion at least of described a pair of interval and adjacent feature each other to become with described substrate quadrature and departs from 1 ° to 10 °, and have the opening that is received in the middle of described a pair of interval and the adjacent feature in the described patterning photoresist layer, described interval and adjacent feature have to be at least 3.0 aspect ratio and to have aspect ratio between it and are at least 3.0 interval;
In described interval and adjacent feature by in the horizontal tractive, with the species ion be implanted to be received to be lower than described at interval and in the backing material of adjacent feature; Carry out described ion and implant to depart from a certain angle, and be implanted in the backing material that is received in described a pair of interval and adjacent feature below with described substrate quadrature; And
After described ion is implanted, from the described patterning photoresist of described substrate removal layer; Described the removing of described patterning photoresist layer makes the degree that had of lateral separation degree when being accepted in described a pair of interval and adjacent feature top when described patterning photoresist layer of outermost portion of described a pair of interval and adjacent feature begin to reduce.
18. an ion implantation method, it comprises:
Formation is from outside outstanding a pair of interval of substrate and adjacent feature;
Determine first group of photoresist processing parameter, formed above described interval and the adjacent feature have the patterning photoresist layer that is received in the opening in the middle of described interval and the adjacent feature after, described first group of photoresist processing parameter will cause first lateral separation of the outermost portion of described a pair of interval and adjacent feature;
Use second group of photoresist processing parameter above described interval and adjacent feature, to form described patterning photoresist layer, described second group of photoresist processing parameter causes second lateral separation of the outermost portion of described interval and adjacent feature, it is greater than described first lateral separation, described second lateral separation to small part be by, by second group of photoresist processing parameter at described interval and the described patterning photoresist layer that forms of the outermost portion at least of adjacent feature laterally be pulled away from action, caused;
In above the described patterning photoresist layer that is formed by described second group of photoresist processing parameter is positioned at described feature, the species ion is implanted to is received in the backing material that is lower than described a pair of interval and adjacent feature; And
After described ion is implanted, from the described patterning photoresist of described substrate removal layer.
19. method according to claim 18, wherein said second group of photoresist processing parameter comprises the thickness of described patterning photoresist layer, and it is greater than the thickness in described first group of photoresist processing parameter.
20. method according to claim 18, wherein said second group of photoresist processing parameter comprises in the time at least one of pre-exposure baked temperature and pre-exposure baked, and it is less than pre-exposure baked temperature and pre-exposure baked time in described first group of photoresist processing parameter.
21. method according to claim 18, removing of wherein said patterning photoresist layer, the degree that makes the lateral separation degree of outermost portion of described a pair of interval and adjacent feature be had when being accepted in described a pair of interval and adjacent feature top when described patterning photoresist layer begins to reduce.
22. method according to claim 18 is wherein carried out described ion and is implanted to depart from an angle with described substrate quadrature, and is implanted in the backing material that is received in described a pair of interval and adjacent feature below.
23. method according to claim 18, wherein said interval and adjacent feature have identical size and shape.
24. method according to claim 18, wherein said interval and adjacent feature are different aspect at least one of size and shape.
25. method according to claim 18, wherein said patterning photoresist layer be received in described a pair of interval and adjacent feature each top be less than whole parts.
26. an ion implantation method, it comprises:
Formation is from substrate outwards outstanding first, second and the 3rd feature; Described second feature is received in the middle of the described first and the 3rd feature;
By being positioned at described first and the action that laterally is pulled away from of the patterning photoresist layer of the outermost portion at least of third part, utilizing in the patterning photoresist course that is received in described first, second and the 3rd feature top outermost portion at least towards horizontal tractive of described second feature described first and the 3rd feature; Described patterning photoresist layer all is received in described second feature top and bridge joint between the described first and the 3rd feature; The lateral wall of horizontal exposure described first of described patterning photoresist layer and the 3rd feature;
When the described first and the 3rd feature is by horizontal tractive, the species ion is implanted in the backing material of and contiguous described first feature and the 3rd feature laterally outside, and described backing material is received to and is lower than the described first and the 3rd feature in the described first and the 3rd feature; And
After described ion is implanted, from the described patterning photoresist of described substrate removal layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/168,893 US7329618B2 (en) | 2005-06-28 | 2005-06-28 | Ion implanting methods |
| US11/168,893 | 2005-06-28 | ||
| PCT/US2006/020600 WO2007001712A1 (en) | 2005-06-28 | 2006-05-25 | Ion implanting methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101208777A CN101208777A (en) | 2008-06-25 |
| CN101208777B true CN101208777B (en) | 2011-02-16 |
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| CN2006800227358A Expired - Fee Related CN101208777B (en) | 2005-06-28 | 2006-05-25 | Ion implanting methods |
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| US (1) | US7329618B2 (en) |
| EP (1) | EP1897124B1 (en) |
| JP (1) | JP5093612B2 (en) |
| KR (1) | KR100976307B1 (en) |
| CN (1) | CN101208777B (en) |
| AT (1) | ATE479199T1 (en) |
| DE (1) | DE602006016442D1 (en) |
| TW (1) | TWI305936B (en) |
| WO (1) | WO2007001712A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5181710B2 (en) * | 2008-02-14 | 2013-04-10 | 住友電気工業株式会社 | Manufacturing method of semiconductor device |
| CN111211039B (en) * | 2019-01-18 | 2020-11-20 | 合肥晶合集成电路有限公司 | Method for forming trench isolation structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5155369A (en) * | 1990-09-28 | 1992-10-13 | Applied Materials, Inc. | Multiple angle implants for shallow implant |
| US6146929A (en) * | 1998-07-09 | 2000-11-14 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device using multiple steps continuously without exposing substrate to the atmosphere |
| US6200884B1 (en) * | 1999-07-31 | 2001-03-13 | Advanced Micro Devices, Inc. | Method for shaping photoresist mask to improve high aspect ratio ion implantation |
| CN1471724A (en) * | 2000-11-03 | 2004-01-28 | Lm��������绰��˾ | Integration of high voltage self-aligned MOS components |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS515935B2 (en) * | 1972-04-17 | 1976-02-24 | ||
| US4033797A (en) * | 1973-05-21 | 1977-07-05 | Hughes Aircraft Company | Method of manufacturing a complementary metal-insulation-semiconductor circuit |
| JPH05110111A (en) * | 1991-10-21 | 1993-04-30 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPH06151350A (en) * | 1992-11-13 | 1994-05-31 | Sony Corp | Manufacture of semiconductor device |
| US5376578A (en) * | 1993-12-17 | 1994-12-27 | International Business Machines Corporation | Method of fabricating a semiconductor device with raised diffusions and isolation |
| JPH0822965A (en) * | 1994-07-05 | 1996-01-23 | Kawasaki Steel Corp | Photoresist mask and forming method of impurity region of semiconductor device |
| JPH10229178A (en) * | 1997-02-13 | 1998-08-25 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| US6326300B1 (en) * | 1998-09-21 | 2001-12-04 | Taiwan Semiconductor Manufacturing Company | Dual damascene patterned conductor layer formation method |
| US6576405B1 (en) | 1999-07-01 | 2003-06-10 | Zilog, Inc. | High aspect ratio photolithographic method for high energy implantation |
| JP2001077360A (en) * | 1999-09-03 | 2001-03-23 | Matsushita Electronics Industry Corp | Method for manufacturing semiconductor device |
| US6420226B1 (en) * | 2001-12-12 | 2002-07-16 | Taiwan Semiconductor Manufacturing Company | Method of defining a buried stack capacitor structure for a one transistor RAM cell |
-
2005
- 2005-06-28 US US11/168,893 patent/US7329618B2/en active Active
-
2006
- 2006-05-25 JP JP2008519309A patent/JP5093612B2/en not_active Expired - Fee Related
- 2006-05-25 KR KR1020087000857A patent/KR100976307B1/en not_active IP Right Cessation
- 2006-05-25 AT AT06771392T patent/ATE479199T1/en not_active IP Right Cessation
- 2006-05-25 WO PCT/US2006/020600 patent/WO2007001712A1/en active Search and Examination
- 2006-05-25 DE DE602006016442T patent/DE602006016442D1/en active Active
- 2006-05-25 CN CN2006800227358A patent/CN101208777B/en not_active Expired - Fee Related
- 2006-05-25 EP EP06771392A patent/EP1897124B1/en not_active Not-in-force
- 2006-06-09 TW TW095120643A patent/TWI305936B/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5155369A (en) * | 1990-09-28 | 1992-10-13 | Applied Materials, Inc. | Multiple angle implants for shallow implant |
| US6146929A (en) * | 1998-07-09 | 2000-11-14 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device using multiple steps continuously without exposing substrate to the atmosphere |
| US6200884B1 (en) * | 1999-07-31 | 2001-03-13 | Advanced Micro Devices, Inc. | Method for shaping photoresist mask to improve high aspect ratio ion implantation |
| CN1471724A (en) * | 2000-11-03 | 2004-01-28 | Lm��������绰��˾ | Integration of high voltage self-aligned MOS components |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1897124A1 (en) | 2008-03-12 |
| JP5093612B2 (en) | 2012-12-12 |
| KR100976307B1 (en) | 2010-08-16 |
| WO2007001712A1 (en) | 2007-01-04 |
| TWI305936B (en) | 2009-02-01 |
| DE602006016442D1 (en) | 2010-10-07 |
| US7329618B2 (en) | 2008-02-12 |
| ATE479199T1 (en) | 2010-09-15 |
| JP2009510715A (en) | 2009-03-12 |
| EP1897124B1 (en) | 2010-08-25 |
| KR20080016738A (en) | 2008-02-21 |
| CN101208777A (en) | 2008-06-25 |
| US20060292838A1 (en) | 2006-12-28 |
| TW200703477A (en) | 2007-01-16 |
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