CN101151647A - 电压控制象素电路、显示系统及其驱动方法 - Google Patents
电压控制象素电路、显示系统及其驱动方法 Download PDFInfo
- Publication number
- CN101151647A CN101151647A CNA2006800099805A CN200680009980A CN101151647A CN 101151647 A CN101151647 A CN 101151647A CN A2006800099805 A CNA2006800099805 A CN A2006800099805A CN 200680009980 A CN200680009980 A CN 200680009980A CN 101151647 A CN101151647 A CN 101151647A
- Authority
- CN
- China
- Prior art keywords
- terminal
- transistor
- programming
- pixel circuit
- driving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3266—Details of drivers for scan electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0465—Improved aperture ratio, e.g. by size reduction of the pixel circuit, e.g. for improving the pixel density or the maximum displayable luminance or brightness
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0852—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
- G09G2300/0866—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes by means of changes in the pixel supply voltage
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/08—Details of timing specific for flat panels, other than clock recovery
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
Abstract
本发明提供了一种电压控制象素电路、具有所述电压控制象素电路的显示系统及其驱动方法。象素电路包括发光设备、连接到发光设备的驱动晶体管和可编程电路。可编程电路在象素电路的编程周期内调节象素电流。
Description
技术领域
本发明涉及一种发光设备显示器,并且尤其涉及一种用于发光设备显示器的驱动技术。
背景技术
由于比有源矩阵液晶显示器有优点,最近,具有非晶硅(a-Si)、多晶硅、有机的或其他驱动底板的有源矩阵有机发光二极管(AMOLED)显示器变得越来越具有吸引力。使用非晶硅底板的AMOLED显示器,例如,具有包括低温制备和低成本制备的优点,低温制备的优点扩大了不同基板的使用并且能够实现灵活显示,并且低成本制备的优点能够生产出具有宽观察视角的高分辨率显示器。
AMOLED显示器包括象素的行和列阵列,每个阵列具有有机发光二极管(OLED)和设置在行和列阵列中的底板电子元件(backplaneelectronics)。由于OLED是电流驱动设备,AMOLED的象素电路应该能够提供准确的和不变的驱动电流。
图1示出了美国专利号5748160所公开的象素电路。图1的象素电路包括OLED10、驱动薄膜晶体管(TFT)11、开关TFT13和储存电容14。驱动TFT11的漏极端连接到OLED10上。驱动TFT11的栅极端(gate terminal)通过开关TFT 13连接到列线12。当象素电路从列线12断开时,连接在驱动薄膜晶体管11的栅极端和地之间的储存电容14用于保持驱动薄膜晶体管11的栅极端的电压。通过OLED10的电流强烈地依赖于驱动TFT11的特性参数。由于驱动TFT11的特性参数,尤其偏压下的阈值电压,随着时间变化,并且这些变化对于不同的象素不同,感应图像失真(induced image distortion)会很大而不能接受。
美国专利号6229508公开了一种电压控制象素电路,其提供独立于驱动TFT的阈值电压的电流到OLED。在该象素中,驱动TFT的栅-源电压包括编程电压和驱动TFT的阈值电压。美国专利号6229508的缺点是象素电路需要额外的晶体管并且较复杂,其导致了显示器的增益减少、象素孔径减小和寿命减小。
另一个使得象素电路对驱动晶体管的阈值电压的变化更加不敏感的方法是使用电流控制象素电路,例如,在美国专利号6734636中公开的象素电路。在传统的电流控制象素电路中,驱动TFT的栅-源电压基于在下一个结构(next frame)中流过的电流自调节,因此,OLED电流比较少依赖于驱动TFT的电流-电压特性。电流控制象素电路的缺点是:由于大的线路容量,与低的控制电流水平有关的耗费(overhead)出现在列线充电时间。
发明内容
本发明的目的在于提供一种消除或者减轻现有系统的至少一个缺点的方法和系统。
根据本发明的一个方面,本发明提供了一种象素电路,其包括:具有第一电极和第二电极的发光设备;具有栅极端、第一端和第二端的驱动晶体管,驱动晶体管的第一端连接到发光设备的第一电极;具有第一和第二端的第一电容,第一电容的第一端连接到驱动晶体管的栅极端,第一电容器的第二端连接到驱动晶体管的第一端和发光设备的第一电极;具有栅极端、第一端和第二端的第一开关晶体管,第一开关晶体管的第一端连接到驱动晶体管的栅极端和第一电容器的第一端;和用于在象素电路的编程周期内本地调节象素电流的编程电路,该可编程电路具有可编程晶体管,可编程晶体管连接到发光设备的第一电极并且在象素电路的编程周期内偏置。
根据本发明的另一个方面,本发明提供了一种显示系统,其包括:包括多个象素电路的显示阵列,用于驱动显示阵列以建立编程周期和驱动周期的驱动系统;和用于控制驱动系统的控制器,每个象素电路包括具有第一电极和第二电极的发光设备;具有栅极端、第一端和第二端的驱动晶体管,驱动晶体管的第一端连接到发光设备的第一电极;具有第一和第二端的第一电容器,第一电容器的第一端连接到驱动晶体管的第一端,第一电容器的第二端连接到驱动晶体管的第一端和发光设备的第一电极;具有栅极端、第一端和第二端的第一开关晶体管,第一开关晶体管的第一端连接到驱动晶体管的栅极端和第一电容器的第一端;和用于在编程周期内本地调节象素电路的编程电路,编程电路具有可编程的晶体管,可编程的晶体管连接到发光设备的第一电极并且在编程周期内偏置。
根据本发明的另一个方面,本发明提供了一种驱动象素电路的方法,象素电路包括具有第一电极和第二电极的发光设备;具有栅极端、第一端和第二端的驱动晶体管,驱动晶体管的第一端连接到发光设备的第一电极;具有第一和第二端的第一电容器,第一电容器的第一端连接到驱动晶体管的栅极端,第一电容器的第二端连接到驱动晶体管的第一端和发光设备的第一电极;具有栅极端、第一端和第二端的第一开关晶体管,第一开关晶体管的第一端连接到驱动晶体管的栅极端和第一电容器的第一端;和具有可编程晶体管的可编程电路,可编程晶体管连接到发光设备的第一电极;该方法包括以下步骤:在象素电路的编程周期内,偏置可编程晶体管以本地调节象素电流;在象素电路的驱动周期内,使得可编程晶体管关闭。
根据本发明的另一方面,本发明提供了一种象素电路,其包含短期偏置条件,在该偏置条件下可编程TFT是稳定的。
根据本发明的另一方面,本发明提供了一种象素电路结构,其包括具有一个编程部分和一个驱动部分的两个分离的部分,其中可编程部分在一小部分时间框内承受压力并且调节象素电流,同时,驱动部分驱动OLED。
本发明的概述没有必要描述本发明的所有特征。通过下面结合附图对实施例的详细描述,本领域的技术人员将更容易理解本发明的其他方面和特征。
附图说明
通过下面的附图,本发明的这些和其他特性将变得更加清楚,在所述附图中都添加了附图标记,其中:
图1是常规2-TFT电压控制象素电路的图;
图2是本发明实施例的象素电路的图;
图3是用于驱动图2的象素电路的波形例子的时间图;
图4是具有图2的象素电路的显示系统的图;
图5是本发明的另一实施例的象素电路的图;
图6是用于驱动图5的象素电路的波形例子的时间图;
图7是具有图5的象素电路的显示系统的图;
图8是本发明的另一实施例的象素电路的图;
图9是用于驱动图8的象素电路的波形例子的时间图;
图10是本发明的另一实施例的象素电路的图;
图11是用于驱动图10的象素电路的波形例子的时间图;
图12是应用到图4和图7阵列的编程和驱动周期的例子的时间图;
图13是应用到图2和图3的驱动技术的仿真结果的图。
具体实施方式
利用具有有机发光二极管(OLED)和驱动薄膜晶体管(TFT)的象素描述本发明的实施例。OLED可以为NIP反向或者PIN非反向OLED。然而,象素还可以包括除了OLED外的任意发光设备,并且象素可以包括除了TFT外的任意驱动晶体管。需要注意,在说明书中,“象素电路”和“象素”可以互换使用。
本发明的实施例提供本地参考的电压控制象素电路,其中,稳定的偏压条件用于象素电路的一部分(可编程部分),并且在本地的象素电路编程周期中,编程电路被用于调整象素电流。
本发明的实施例提供用于驱动电压控制象素的技术以提供稳定的电流源到OLED。本发明的实施例提供一种用于驱动电压控制象素的列/行的技术以提供稳定的发光设备显示操作。
图2示出了本发明的实施例的本地参考的电压控制象素电路20。象素电路20包括OLED 22、存储电容24、驱动晶体管26、开关晶体管28和具有可编程晶体管30的可编程电路。选择线SEL[n]连接到开关晶体管28。信号线VDATA1连接到可编程晶体管30。信号线VDATA2连接到开关晶体管28。负电压线SEL[n+1]连接到可编程晶体管30。正电压线VDD连接到驱动晶体管26。
晶体管26、28和30是n-型TFT。然而,晶体管26、28和30可以为p-型晶体管。应用到象素电路20的驱动技术还可以应用到具有p-型晶体管的补充象素电路(complementary pixel circuit)。晶体管26、28和30可以利用非晶硅、纳米级/微米级晶体硅、多晶硅、有机半导体技术(例如,有机TFT)、NMOS/PMOS技术或者CMOS技术(例如,MOSFET)。多个象素电路20可以形成AMOLED显示器。
通过开关晶体管28,驱动晶体管26的栅极端连接到VDATA2。驱动晶体管26的漏极端连接到VDD。驱动晶体管26的源极端连接到OLED22的阳电极(在节点B1处)。OLED 22的阴极电极连接到通常的接地。
开关晶体管28的栅极端连接到SEL[n]。开关晶体管28的漏极端连接到VDATA2。开关晶体管28的源极端连接到驱动晶体管26的栅极端(在节点A1处)。
可编程晶体管(programming transistor)30的栅极端连接到VDATA1。可编程晶体管30的漏极端连接到OLED 22的阳极端(在节点B1处)。可编程晶体管30的源极端连接到SEL[n+1]。
储存电容24的一端连接到节点A1处的驱动晶体管26的栅极端和开关晶体管28的源极端。在节点B1处,存储电容24的另一端连接到驱动晶体管26的源极端、可编程晶体管30的漏极端和OLED 22的阳极端。
由于在偏置条件下,可编程晶体管30为稳定的本地参考晶体管(stable local reference transistor),并且在作为本地电流源的象素电路的编程周期中被用于调节象素电流。因此,尽管有驱动晶体管26和OLED 22的老化效应,象素电流仍变得稳定。需要注意的是,在说明书中,术语“可编程晶体管”和“本地参考晶体管”可以互换使用。
图3为应用到图2的象素电路20的波形例子的时间图。参考图2和图3,象素电路20的操作包括编程周期X11和驱动周期X12。
SEL[n+1]在第n行和第n+1行之间共享,并且在第n行和第n+1行的编程周期内作为两个不同的角色。在第n行的编程周期内,SEL[n+1]用于提供信号VSS。在第n+1行的编程周期内,SEL[n+1]用于提供第n+1行的地址信号。因此,在第n行的第二编程周期X12内,其还为第n+1行的第一编程周期X11,SEL[n+1]变成高压以调整第n+1行。
第一运行周期X11:SEL[n]是高的并且SEL[n+1]具有负电压VSS。VDATA2变成偏置电压VB,并且VDATA1具有编程电压Vp+VSS。
在X11内,在节点A1处的电压为VB。因此,在节点B1处的电压可以写为:
ΔVT=((W/L)T3/(W/L)T1)1/2VT3-VT1...(2)
VP=VDATA1-VSEL[n+1]...(3)
其中,VB1代表节点B1的电压,VT1代表驱动晶体管26的阈值电压,VT3代表可编程晶体管30的阈值电压,(W/L)T1是驱动晶体管26的纵横比,和(W/L)T3是可编程晶体管30的纵横比。
第二运行周期X12:因为下一个行编程周期,SEL[n]较低,SEL[n+1]较高。在驱动周期X12内,SEL[n+1]的电压改变。这是由于下面所描述的下一个行的编程周期,并且其不影响电流行的编程。
在X12内,节点B1处的电压变成VOLED,并且节点A1处的电压变成
其中,VOLED代表OLED22处的电压。
驱动晶体管26的栅-源电压VGS如下:
VGS=((W/L)T3/(W/L)T1)1/2VP+ΔVT...(5)
在该实施例中,可编程晶体管30仅仅在第一运行周期X11正偏置,并且在时间框的其他时间内不会正偏置。由于可编程晶体管30仅仅在一小部分时间内是开的,阈值电压VT3的变化是可以忽略的。因此,在运行周期X21内的驱动晶体管26的电流独立于其阈值电压和OLED特性的变化。
图4示出了具有图2的象素电路的显示系统。图4的VDD[j/2]和VDD[j/2+1]对应图2的VDD。图4的VDATA1[j]和VDATA[j+1]对应图2的VDATA1。VDATA2[j]和VDATA2[j+1]对应图2的VDATA2。图4的SEL[j]、SEL[j+1]、SEL[j+2]、SEL[j+3]对应图2的SEL[n]或者SEL[n+1]。
在图4中,6个象素电路被作为例子示出。图4的显示系统包括多于6个的象素电路。在图4中,作为例子示出了两个VDATA1线、两个VDATA2线、两个VDD线和四个SEL线。图4的显示系统可以包括多于两个的VDATA1线、多于两个的VDATA2线、多于两个的VDD线和多于四个的SEL线。
图4的显示阵列40为具有多个图2的象素电路20的AMOLED显示器。在阵列40中,象素电路20以行和列设置。VDATA1[i]和VDATA1[i+1]在显示器阵列40的普通列象素之间共享。VDATA2[i]和VDATA2[i+1]在显示器阵列40的普通列象素之间共享。SEL[j]、SEL[j+1]、SEL[j+2]、SEL[j+3]在显示阵列40内的普通行象素间共享。VDD[j/2]和VDD[j/2+1]在显示阵列40内的普通行象素间共享。为了节省面积并且增加孔径比,VDD[j/2](VDD[j/2+1])在两个连续的行之间共享。
驱动器42用于驱动VDATA1[j]、VDATA1[j+1],驱动器44用于驱动VDATA2[j]、VDATA2[j+1]。驱动器42和44中的一个包含显示数据,而另外一个不包含显示数据。根据线性接口的需要,驱动器42和44可以位于显示器的两边。
驱动器46用于驱动VDD[j/1]、VDD[j/2+1]和SEL[j]、SEL[j+1]、SEL[j+2]、SEL[j+3]。然而,VDD[j/1]、VDD[j/2+1]的驱动器可以独立于SEL[j]、SEL[j+1]、SEL[j+2]、SEL[j+3]的驱动器设置。控制器48控制驱动器42、44和46以驱动上面所描述的象素电路。
图5示出了本发明的另一个实施例的本地参考电压编程象素电路60。象素电路60包括OLED 62、存储电容64、驱动晶体管66、开关晶体管68和具有可编程晶体管70的可编程电路。选择线SEL[n]连接到开关晶体管68上。单线VDATA连接到可编程晶体管70。负电压线SEL[n+1]连接到可编程晶体管70。正电压线VDD连接到驱动晶体管66和开关晶体管68。VDD中的电压是可控制的。
晶体管66、68和70是n-型TFT。然而,晶体管66、68和70可以为p-型晶体管。应用到象素电路60的驱动技术还可应用到具有p-型晶体管的补充象素电路。晶体管66、68和70可以使用非晶硅、纳米级/微米级晶硅、多晶硅、有机半导体技术(例如,有机TFT)、NMOS/PMOS技术或者CMOS技术(例如,MOSFET)制备。多个象素电路60可以形成AMOLED显示器。
驱动晶体管66的栅极端通过开关晶体管68连接到VDD。驱动晶体管66的漏极端连接到VDD。驱动晶体管66的源极端连接到OLED 62(节点B2处)的阳极电极。OLED 62的阴极端连接到通常的接地。
存储电容64的一端连接到节点A2处的驱动晶体管66的栅极端和开关晶体管68的源极端。存储电容64的另一端连接到节点B2处的驱动晶体管66的源极端、可编程晶体管70的漏极端和OLED 62的阳极电极。
由于偏置条件,可编程晶体管70为稳定的本地参考晶体管,并且在编程周期内用于调节象素电流。因此,尽管有驱动晶体管66和OLED 62的老化效应,象素电流仍变得稳定。
图6示出了应用到图5的象素电路的波形例子的时间图。参考图5和图6,象素电路60的运行包括编程周期X21和驱动周期X22。
如上面所描述,SEL[n+1]在第n和n+1行共享,并且在第n和n+1行的编程周期内作为两个不同的角色。在第n行的编程周期内,SEL[n+1]用于提供VSS信号。在第n+1行的编程周期内,SEL[n+1]用于提供第n+1行的地址信号。因此,在第n行的第二编程周期X22,其还为n+1行的第一编程周期X21,SEL[n+1]变成高电压以调整(address)第n+1行。
第一运行周期X21:SEL[n]是高的并且SEL[n+1]具有负电压VSS。VDATA变成编程电压VP+VSS,并且VDD具有偏置电压VB。
在X21内,节点A2处的电压为VB。因此,节点B2处的电压可以写为:
ΔVT=((W/L)T3/(W/L)T1)1/2VT3-VT1...(7)
Vp=VDATA1-VSEL[n+1]...(8)
其中,VB2代表节点B2的电压,VT1代表驱动晶体管66的阈值电压,VT3代表可编程晶体管70的阈值电压,(W/L)T1为驱动晶体管66的纵横比,并且(W/L)T3为可编程晶体管70的纵横比。
第二运行周期X21:由于下一个行编程周期,SEL[n]是低的,SEL[n+1]是高的。在驱动周期X22内,SEL[n+1]的电压是可以改变的。这是由于下面所描述的下一个行的编程周期,不会影响电流行的编程。
在X22内,节点B2处的电压变成VOLED,并且节点A2处的电压变成:
驱动晶体管66的栅-源电压VGS如下:
VGS=((w/L)T3/(w/L)T1)1/2VP+VT1-VT3...(10)
在该实施例中,编程晶体管70仅仅在第一运行周期X21内正偏置,并且在时间框内的其他时间不会正偏置。由于编程晶体管70仅仅在小部分时间打开,阈值电压VT3的变化可以忽略。因此,在运行周期内的驱动晶体管66的电流独立于其阈值电压和OLED特性的变化。
图7示出了图5的具有象素电路60的显示系统。图7的VDD[j/2]和VDD[j/2+1]对应图5的VDD。图7的VDATA1[i]和VDATA1[i+1]对应图5的VDATA。图7的SEL[j]、SEL[j+1]、SEL[j+2]、SEL[j+3]对应图5的SEL[n]或者SEL[n+1]。
在图7中,作为例子示出了6个象素电路。图4的显示系统包括多于6个象素电路。在图7中,两个VDATA线、两个VDD线和四个SEL线作为例子示出。图7的显示系统包括多于两个的VDATA线、多于两个的VDD线和多于4个的SEL线。
图7的显示阵列80为具有多个图5的象素电路10的AMOLED显示器。象素电路以行和列设置。VDATA[i]和VDATA[i+1]在显示阵列80内的普通列象素间共享。SEL[j]、SEL[j+1]、SEL[j+2]、SEL[j+3]在显示阵列80内的普通行象素间共享。VDD[j/2]和VDD[j/2+1]在显示阵列80内的普通行象素之间共享。为了节省面积并且增加孔径比,VDD[j/2](VDD[j/2+1])在两个连续的行之间共享。
驱动器82被设置为驱动VDATA[j]、VDATA[j+1]。驱动器84设置为驱动VDD[j/1]、VDD[j/2+1]、SEL[j]、SEL[j+1]、SEL[j+2]、SEL[j+3]。然而,VDD[j/1]、VDD[j/2+1]驱动器可以独立于SEL[j]、SEL[j+1]、SEL[j+2]、SEL[j+3]的驱动器设置。控制器86控制驱动器82和84以驱动上面所描述的象素电路。
图8示出了本发明的另一个实施例的本地参考电压控制象素电路90。象素电路90包括OLED 92、存储电容94、驱动晶体管96、开关晶体管98和编程电路106。编程电路106包括编程晶体管100、开关晶体管102和存储电容104。
选择线SEL[n]连接到开关晶体管98。单线VDATA1连接到开关晶体管102。单线VDATA2连接到开关晶体管98。负电压线SEL[n+1]连接到编程晶体管100。正电压线VDD连接到驱动晶体管96。图4的阵列结构可以用于图8的象素电路90。
晶体管96、98、100和102为n-型TFT。然而,晶体管96、98、100和102可以为p-型晶体管。应用到象素电路90的驱动技术还可以应用到具有p-型晶体管的补充象素电路。晶体管96、98、100和102可以利用非晶硅、纳米级/微米级晶硅、多晶硅、有机半导体技术(例如,有机TFT)、NMOS/PMOS技术或者COMS技术(例如,MOSFET)。多个象素电路90可以形成AMOLED显示器。
驱动晶体管96的栅极端通过开关晶体管98连接到VDATA2。驱动晶体管96的漏极端连接到VDD。驱动晶体管96的源极端连接到OLED92(在节点B3处)的阳极电极。OLED 92的阴极电极连接到通常的接地。
开关晶体管98的栅极端连接到SEL[n]。开关晶体管98的漏极端连接到VDATA2。开关晶体管98的源极端连接到驱动晶体管96的栅极端(在节点A1处)。
可编程晶体管100的栅极端通过开关晶体管102连接到VDATA1。可编程晶体管100的漏极端连接到OLED 92的阳极端(在节点B3处)。可编程晶体管100的源极端连接到SEL[n+1]。
开关晶体管102的栅极端连接到SEL[n]。开关晶体管102的源极端连接到VDATA1。开关晶体管102的漏极端连接到可编程晶体管100的栅极端(在节点C3处)。
存储电容94的一端连接到节点A3处的驱动晶体管96的栅极端和开关晶体管98的源极端。存储电容94的另一端连接到节点B3处的驱动晶体管96的源极端、开关晶体管90的漏极端和OLED 92的阳极电极。
存储电容104的一端连接到节点C3处的可编程晶体管100的栅极端和开关晶体管102的漏极端。存储电容104的另一端连接到SEL[n+1]。
现在详细描述可编程电路106。象素电路90的运行包括编程周期和驱动周期。由于偏置条件,可编程晶体管100为稳定的本地参考晶体管并且在编程周期内用于调节象素电流。在可编程周期内,通过开关晶体管102,可编程电压被写进存储电容104,并且可编程晶体管100调节象素电流。在驱动周期内,复位电压被写进存储电容104并且因此关闭可编程晶体管100。因此,象素电流流过OLED 92。由于可编程晶体管100仅仅在可编程周期内开,其不会经受任何阈值变化。因此,由可编程晶体管100定义的象素电流变得稳定。
图9示出了应用于图8的象素电路90的波形例子的时间图。参考图8和图9,象素电路90的运行包括具有运行周期X31和X32的可编程周期和具有运行周期X33的驱动周期。
如上面的描述,SEL[n+1]在第n和n+1行间共享,并且在第n和n+1行的编程周期内执行两个不同的角色。在第n行的可编程周期内,SEL[n+1]用于提供信号VSS。在第n+1行的编程周期内,SEL[n+1]用于提供第n+1行的地址信号。因此,在第n行的第二可编程周期X32内,其还为第n+1行的第一可编程周期X31,SEL[n+1]变成高电压以调整n+1行。
第一运行周期X31:SEL[n]是高的并且SEL[n+1]具有负电压VSS。VDATA1变成可编程电压VP+VSS,并且VDATA 2具有偏置电压VB。
节点C3充电到VP+VSS。节点A3充电到偏置电压VB。作为结果,节点B3处的电压变成:
ΔVT=((W/L)T3/(W/L)T1)1/2VT3-VT1...(12)
其中,VB3代表节点B3的电压,VT1代表驱动晶体管96的阈值电压,并且VT3代表可编程晶体管100的阈值电压,(W/L)T1是驱动晶体管96的纵横比,和(W/L)T3为可编程晶体管100的纵横比。
驱动晶体管96的栅-源电压如下:
VGS=((W/L)T3/(W/L)T1)1/2VP+VT1-VT3...(13)
在X32和X33内VGS保持相同的值。
第二运行周期X32:SEL[n]变成中间电压,其中开关晶体管98关闭并且开关晶体管102开。VDATA1变成0。因此,可编程晶体管100关闭。
第三运行周期X33:由于上面所描述的下一个行编程周期,SEL[n]是低的,并且SEL[n+1]是高的。
在X33内,节点C3充电到复位电压。节点B3处的电压变成VOLED,其为象素电流对应的OLED电压。因此,节点A3处的电压变成
在该实施例中,可编程晶体管100仅仅在第一运行周期X31内正偏置,并且在时间框内的其他时间内不会正偏置。由于可编程晶体管100仅仅在一小部分时间内开,其阈值变化可以忽略。因此,在运行周期内的驱动晶体管96的电流独立于其阈值电压和OLED特性的变化。
图10示出了本发明的另一实施例的本地参考电压可编程象素电路110。象素电路110包括OLED112、存储电容114、驱动晶体管116、开关晶体管118和可编程电路126。可编程电路126包括开关晶体管120、可编程晶体管122和存储电容124。
选择线SEL[n]连接到开关晶体管118和122。信号线VDATA连接到开关晶体管122。负电压线SEL[n+1]连接到可编程晶体管120。正电压线VDD连接到晶体管116和118。VDD的电压可以改变。图7的阵列结构可以用于图10的象素电路110。
晶体管116、118、120和122为n-type TFT。然而,晶体管116、118、120和122可以为p-型晶体管。应用到象素电路110的可编程和驱动技术还可应用到具有p-型晶体管的补充象素电路。晶体管116、118、120和122可以利用非晶硅、纳米级/微米级晶硅、多晶硅、有机半导体技术(例如,有机TFT),NMOS/PMOS技术或者CMOS技术(例如,MOSFET)制备。多个象素电路110可以形成AMOLED显示器。
驱动晶体管116的栅极端通过开关晶体管118连接到VDD。驱动晶体管116的漏极端连接到VDD。驱动晶体管116的源极端连接到OLED112的阳极电极(在节点B4处)。OLED112的阴极电极连接到普通的地。
开关晶体管118的栅极端连接到SEL[n]。开关晶体管118的漏极端连接到VDD。开关晶体管118的源极端连接到驱动晶体管116的栅极端(在节点A4处)。
可编程晶体管120的栅极端通过开关晶体管122连接到VDATA。可编程晶体管120的漏极端连接到OLED112的阳极端(在节点B4处)。可编程晶体管120的源极端连接到SEL[n+1]。
开关晶体管122的栅极端连接到SEL[n]。开关晶体管122的源极端连接到VDATA。开关晶体管122的漏极端连接到可编程晶体管120的栅极端(在节点C4处)。
存储电容114的一端连接到节点A4处的驱动晶体管116的栅极端和开关晶体管118的源极端。存储电容114的另一端连接到节点B4处的驱动晶体管116的源极端、可编程晶体管120的漏极端和OLED112的阳极电极。
存储电容124的一端在节点C4处连接到可编程晶体管120的栅极端和开关晶体管122的漏极端。存储电容124的另一端连接到SEL[n+1]。
对可编程电路126进行详细描述。象素电路110的运行包括可编程周期和驱动周期。由于其偏置条件,可编程晶体管120为稳定的本地参考晶体管,并且在编程周期内用于调节象素电流。在编程周期内,可编程电压通过开关晶体管122被写入电容器124,并且可编程晶体管120调节象素电流。在驱动周期内,复位电压被写入电容器124并且关闭可编程晶体管120。因此,象素电流流过OLED112。由于可编程晶体管120仅仅在编程周期内开,其不会承受任何阈值变化。因此,象素电流变得稳定,所述象素电流通过可编程晶体管120限定。
图11示出了应用到图10的象素电路110的波形例子的时间图。参考图10和11,象素电路110的运行包括具有运行周期X41和X42的编程周期和具有运行周期X43的驱动周期。
如上面的描述,SEL[n+1]在第n和n+1行间共享,并且在第n和n+1行的编程周期内执行两个不同的角色。在第n行的编程周期内,SEL[n+1]用于提供信号VSS。在第n+1行的编程周期内,SEL[n+1]用于提供n+1行的地址信号。因此,在第n行的第二编程周期X42内,其还为n+1行的第一编程周期,SEL[n+1]变成高电压以调整第n+1行。
第一运行周期X41:SEL[n]是高的并且SEL[n+1]具有负电压VSS。VDATA变成可编程电压VP+VSS,并且VDD具有偏置电压VB。
节点C4充电到VP+VSS。节点A4充电到偏置电压VB。作为结果,节点B4的电压变成:
ΔVT=((W/L)T3/(W/L)T1)1/2VT3-VT1...(16)
其中,VB4代表节点B4的电压,VT1代表驱动晶体管116的阈值电压,并且VT3代表可编程晶体管120的阈值电压,(W/L)T1为驱动晶体管116的纵横比,并且(W/L)T3为可编程晶体管120的纵横比。
驱动晶体管116的栅-源电压VGS如下:
VGS=((W/L)T3/(W/LT1))1/2VP+VT1-VT3...(17)
在X42和X43内,VGS保持相同的值。
第二运行周期X42:SEL[n]变成中间电压,其中,开关晶体管118关闭,并且开关晶体管122打开。VDATA变成0。因此,可编程的晶体管120关闭。
第三运行周期X43:由于上面所描述的下一个行编程周期,SEL[n]是低的,并且SEL[n+1]是高的。
在X43内,节点C4充电到复位电压。在节点B4处的电压变成VOLED,VOLED对应象素电流的OLED电压。作为结果,节点A4处的电压变成:
在该实施例中,可编程晶体管120在第一运行周期X41内正偏置。在时间框的剩余时间,可编程晶体管120不会正偏置。由于可编程晶体管120仅仅在一小部分时间内开,其阈值变化可以忽略。因此,在运行周期内,驱动晶体管116的电流独立于其阈值电压和OLED特性的变化。
图12示出了图4和图7的驱动显示阵列的编程和驱动周期。在图13内,ROW(j)、ROW(j+1)和ROW(j+2)代表显示阵列的行。行的对某框的编程和驱动周期与下一个行的对相同框的编程和驱动周期重叠。每个编程和驱动周期为图3、6、8或10的编程和驱动周期。
图13示出了图2和图3的电路和波形的模拟结果。该结果示出了在驱动晶体管26中应得到2伏特的阈值变化的OLED电流的变化小于4%。
根据本发明的实施例,象素单元的特性变化(例如,驱动晶体管的阈值电压变化和在延长显示运行下的发光设备的衰减)通过存储电容内的电压和将其应用到驱动晶体管的栅极来补偿。因此,象素电路提供稳定的电流,该电流独立于在延长的显示运行下的驱动晶体管的阈值电压变化和OLED的衰减,其有效地改善了显示器运行的寿命。根据本发明的实施例,OLED的亮度稳定性可以通过电路补偿提高。
因为电路简单,和传统的象素电路相比,保证了高产量,低制造成本和高分辨率。而且,由于其快速的设置时间,驱动技术可以应用到大面积的显示。
而且,可编程电路(暂时的)与线路寄生电容分离,这点儿不象传统的电流可编程电路,其保证了快速编程。
所有在此所作的引用都作为参考。
本发明描述了一个或者多个实施例。然而,本领域技术人员可以理解,在不偏离本发明的权利要求所限定的范围,可以进行改变和修改。因此,权利要求书所限定的发明符合最宽的可能的解释以包括所有的这些修改和等同的结构和功能。
Claims (38)
1.一种象素电路,其包括:
具有第一电极和第二电极的发光设备;
具有栅极端、第一端和第二端的驱动晶体管,驱动晶体管的第一端连接到发光设备的第一电极;
具有第一和第二端的第一电容器,第一电容器的第一端连接到驱动晶体管的栅极端,第一电容器的第二端连接到驱动电容器的第一端和发光设备的第一电极;
具有栅极端、第一端和第二端的第一开关晶体管,第一开关晶体管的第一端连接到驱动晶体管的栅极端和第一电容器的第一端;和
在象素电路的编程周期内调节象素电流的编程电路,该编程电路具有可编程晶体管,可编程晶体管连接到发光设备的第一电极并且在象素电路的编程周期内偏置。
2.根据权利要求1所述的象素电路,其特征在于,提供给象素电路的电压被确定以使得在编程周期内可编程晶体管为开,在象素电路的驱动周期内可编程晶体管为关。
3.根据权利要求1所述的象素电路,其特征在于,可编程电路包括第二开关晶体管和第二电容器,第二开关晶体管具有栅极端、第一端和第二端,第二电容器具有第一端和第二端,可编程晶体管的栅极端连接到第二开关晶体管的第一端和第二电容器的第一端。
4.根据权利要求3所述的象素电路,其特征在于,提供给象素电路的电压被确定以使得在编程周期内,编程电压通过第二开关晶体管写入第二电容器,在象素电路驱动周期,复位电压被写进第二电容器以关闭可编程晶体管。
5.根据权利要求1-4的任一项所述的象素电路,其特征在于,发光设备包括有机发光二极管,并且晶体管的至少一个为n-型和p-型薄膜晶体管(TFT)。
6.一种显示系统,包括:
显示阵列,其包括多个象素电路;
驱动系统,用于驱动显示阵列以建立编程周期和驱动周期;和
控制器,用于控制驱动系统;
每个象素电路包括:
发光设备,其具有第一电极和第二电极;
驱动晶体管,其具有栅极端、第一端和第二端,驱动晶体管的第一端连接到发光设备的第一电极;
第一电容器,其具有第一和第二端,第一电容器的第一端连接到驱动晶体管的栅极端,第一电容器的第二端连接到驱动晶体管的第一端和发光设备的第一电极;
第一开关晶体管,其具有栅极端、第一端和第二端,第一开关晶体管的第一端连接到驱动晶体管的栅极端和第一电容器的第一端;和
可编程电路,用于在象素电路的编程周期内调节象素电流,编程电路具有可编程晶体管,可编程晶体管连接到发光设备的第一电极并且在象素电路的编程周期内偏置。
7.根据权利要求6所述的显示系统,其特征在于,驱动系统驱动连接到第一开关晶体管的栅极端的第一线、连接到第一开关晶体管的第二端的第二线、连接到编程晶体管的栅极端的第三线,和连接到编程晶体管的第二端的第四线。
8.根据权利要求7的显示系统,其特征在于,多个象素电路以行和列设置,第一线和第四线的每个在显示阵列的普通行象素电路间共享,第二线在显示阵列的普通列象素电路间共享,并且第三线在显示阵列的普通列象素电路间共享。
9.根据权利要求6所述的显示系统,其特征在于,驱动系统驱动连接到第一开关晶体管的栅极端的第一线、连接到第一开关晶体管的第二端和驱动晶体管的第二端的第二线、连接到编程晶体管的栅极端的第三线,和连接到编程晶体管的第二端的第四线。
10.根据权利要求9所述的显示系统,其特征在于,多个象素电流以行和列设置,第一线和第四线中的每个在显示阵列的普通行象素电路间共享,第二线在显示阵列的普通行象素电路间共享,并且第三线在显示阵列的普通列象素电路间共享。
11.根据权利要求6所述的显示系统,其特征在于,编程电路包括第二开关晶体管和第二电容器,第二开关晶体管具有栅极端、第一端和第二端,第二电容器具有第一端和第二端,可编程晶体管的栅极端连接到第二开关晶体管的第一端和第二电容器的第一端。
12.根据权利要求11所述的显示系统,其特征在于,驱动系统驱动连接到第一开关晶体管的栅极端和第二开关晶体管的栅极端的第一线、连接到第一开关晶体管的第二端的第二线、连接到第二开关晶体管的第二端的第三线,和连接到可编程晶体管的第二端和第二电容器的第二端的第四线。
13.根据权利要求12的显示系统,其特征在于,多个象素电路以行和列设置,第一线和第四线的每个在显示阵列的普通行象素电路间共享,第二线在显示阵列的普通列象素电路间共享,和第三线在显示阵列的普通列象素电路间共享。
14.根据权利要求11所述的显示系统,其特征在于,驱动系统驱动连接到第一开关晶体管的栅极端和第二开关晶体管的栅极端的第一线、连接到第一开关晶体管的第二端和驱动晶体管的第二端的第二线、连接到第二开关晶体管的第二端的第三线,和连接到编程晶体管的第二端和第二电容器的第二端的第四线。
15.根据权利要求14所述的显示系统,其特征在于,多个象素电路以行和列设置,第一线和第四线的每个在显示阵列的普通行象素电路间共享,第二线在显示阵列的普通行象素电路间共享,并且第三线在显示阵列的普通列象素电路间共享。
16.根据权利要求8所述的显示系统,其特征在于,在第n行的编程周期内,第四线用于提供预定的电压,在第n+1行的编程周期内,第四线用于提供第n+1行的地址信号。
17.根据权利要求13所述的显示系统,其特征在于,在第n行的编程周期内,第四线用于提供预定电压,在第n+1行的编程周期内,第四线用于提供第n+1行的地址信号。
18.根据权利要求10所述的显示系统,其特征在于,在第n行的编程周期内,第四线用于提供预定的电压,在第n+1行的编程周期内,第四线用于提供第n+1行的地址信号。
19.根据权利要求15所述的显示系统,其特征在于,在第n行的编程周期内,第四线用于提供预定电压,在第n+1行的编程周期内,第四线用于提供第n+1行的地址信号。
20.一种驱动象素电路的方法,象素电路包括具有第一电极和第二电极的发光设备;具有栅极端、第一端和第二端的驱动晶体管,驱动晶体管的第一端连接到发光设备的第一电极;具有第一和第二端的第一电容器,第一电容器的第一端连接到驱动晶体管的栅极端,第一电容器的第二端连接到驱动晶体管的第一端和发光设备的第一电极;具有栅极端、第一端和第二端的第一开关晶体管,第一开关晶体管的第一端连接到驱动晶体管的栅极端和第一电容器的第一端;和具有编程晶体管的编程电路,编程晶体管连接到发光设备的第一电极端;该方法包括以下步骤:
在象素电路的编程周期内,偏置编程晶体管以本地调节象素电流;
在象素电路的驱动周期内,使得编程晶体管关闭。
21.一种包含短期偏置条件的象素电路,其中,编程TFT为稳定的。
22.一种象素电路结构,包括具有一个编程部分和一个驱动部分的两个分离的部分,其中,编程部分在一小部分时间内承受压力并且调节象素电路,驱动部分驱动OLED。
23.根据权利要求21所述的象素电路,其特征在于,象素电路包括多个具有可编程的TFT的TFT,多个TFT为n-型和/或p-型TFT。
24.根据权利要求21所述的象素电路,其特征在于,象素电路被提供给NIP反向的或者PIN非反向的OLED。
25.根据权利要求22所述的象素电路结构,其特征在于,象素电路包括多个TFT,多个TFT为n-型和/或p-型TFT。
26.根据权利要求22所述的象素电路结构,其特征在于,OLED为NIP反向的或者PIN非反向的OLED。
27.根据权利要求1-4任一项所述的象素电路,其特征在于,可编程的晶体管为TFT,并且象素电路包含短期偏置条件,其中可编程的TFT为稳定的。
28.根据权利要求27所述的象素电路,其特征在于,可编程的TFT为n-型或p-型TFT。
29.根据权利要求27所述的象素电路,其特征在于,发光设备为OLED。
30.根据权利要求2 9所述的象素电路,其特征在于,OLED为NIP反向的或PIN非反向的OLED。
31.根据权利要求1-4任一项所述的象素电路,其特征在于,可编程的晶体管在一小部分时间框内承受压力,而驱动晶体管驱动发光设备。
32.根据权利要求6-19任一项所述的显示系统,其特征在于,可编程晶体管为TFT,并且象素电路包含短期偏置条件,其中可编程TFT为稳定的。
33.根据权利要求32所述的显示系统,其特征在于,可编程的TFT为n-型或p-型TFT。
34.根据权利要求32所述的显示系统,其特征在于,发光设备为OLED。
35.根据权利要求34所述的显示系统,其特征在于,OLED为NIP反向的或PIN非反向的OLED。
36.根据权利要求6-19任一项所述的显示系统,其特征在于,可编程的晶体管在一小部分时间框内承受压力,而驱动晶体管驱动发光设备。
37.根据权利要求21所述的象素电路,其特征在于,象素电路包括具有用于调节象素电路的可编程TFT的可编程部分和具有用于驱动OLED的驱动TFT的驱动部分。
38.根据权利要求22所述的象素电路,其特征在于,可编程部分包括可编程TFT、可编程TFT在一小部分时间内偏置,其中可编程TFT为稳定的。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002495726A CA2495726A1 (en) | 2005-01-28 | 2005-01-28 | Locally referenced voltage programmed pixel for amoled displays |
CA2,495,726 | 2005-01-28 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910246264.4A Division CN101826298B (zh) | 2005-01-28 | 2006-01-26 | 电压控制象素电路、显示系统及其驱动方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101151647A true CN101151647A (zh) | 2008-03-26 |
CN100583203C CN100583203C (zh) | 2010-01-20 |
Family
ID=36702756
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910246264.4A Active CN101826298B (zh) | 2005-01-28 | 2006-01-26 | 电压控制象素电路、显示系统及其驱动方法 |
CN200680009980A Active CN100583203C (zh) | 2005-01-28 | 2006-01-26 | 电压控制象素电路、显示系统及其驱动方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910246264.4A Active CN101826298B (zh) | 2005-01-28 | 2006-01-26 | 电压控制象素电路、显示系统及其驱动方法 |
Country Status (8)
Country | Link |
---|---|
US (5) | US8044893B2 (zh) |
EP (1) | EP1846909B1 (zh) |
JP (1) | JP2008529071A (zh) |
KR (1) | KR20070102577A (zh) |
CN (2) | CN101826298B (zh) |
CA (1) | CA2495726A1 (zh) |
TW (1) | TW200639791A (zh) |
WO (1) | WO2006079203A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107808629A (zh) * | 2016-09-08 | 2018-03-16 | 丰宜香港有限公司 | 像素电路 |
CN114882842A (zh) * | 2022-05-05 | 2022-08-09 | 云谷(固安)科技有限公司 | 显示驱动方法、装置、设备及存储介质 |
Families Citing this family (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7569849B2 (en) | 2001-02-16 | 2009-08-04 | Ignis Innovation Inc. | Pixel driver circuit and pixel circuit having the pixel driver circuit |
CA2419704A1 (en) | 2003-02-24 | 2004-08-24 | Ignis Innovation Inc. | Method of manufacturing a pixel with organic light-emitting diode |
CA2443206A1 (en) | 2003-09-23 | 2005-03-23 | Ignis Innovation Inc. | Amoled display backplanes - pixel driver circuits, array architecture, and external compensation |
CA2472671A1 (en) | 2004-06-29 | 2005-12-29 | Ignis Innovation Inc. | Voltage-programming scheme for current-driven amoled displays |
CA2490858A1 (en) | 2004-12-07 | 2006-06-07 | Ignis Innovation Inc. | Driving method for compensated voltage-programming of amoled displays |
CA2495726A1 (en) | 2005-01-28 | 2006-07-28 | Ignis Innovation Inc. | Locally referenced voltage programmed pixel for amoled displays |
KR20080032072A (ko) | 2005-06-08 | 2008-04-14 | 이그니스 이노베이션 인크. | 발광 디바이스 디스플레이 구동 방법 및 시스템 |
CN101283393B (zh) * | 2005-10-12 | 2013-12-18 | 皇家飞利浦电子股份有限公司 | 晶体管控制电路和控制方法、以及使用该电路的有源矩阵显示设备 |
US9269322B2 (en) | 2006-01-09 | 2016-02-23 | Ignis Innovation Inc. | Method and system for driving an active matrix display circuit |
US9489891B2 (en) | 2006-01-09 | 2016-11-08 | Ignis Innovation Inc. | Method and system for driving an active matrix display circuit |
WO2007079572A1 (en) | 2006-01-09 | 2007-07-19 | Ignis Innovation Inc. | Method and system for driving an active matrix display circuit |
TWI338874B (en) * | 2006-03-10 | 2011-03-11 | Au Optronics Corp | Light emitting diode display and driving pixel method thereof |
TW200746022A (en) | 2006-04-19 | 2007-12-16 | Ignis Innovation Inc | Stable driving scheme for active matrix displays |
TW200811812A (en) * | 2006-08-16 | 2008-03-01 | Tpo Displays Corp | System for displaying image and driving method for organic light-emitting element |
CN101460989B (zh) * | 2006-08-30 | 2011-04-27 | 夏普株式会社 | 显示装置 |
JP4245057B2 (ja) * | 2007-02-21 | 2009-03-25 | ソニー株式会社 | 表示装置及びその駆動方法と電子機器 |
KR100921506B1 (ko) | 2007-04-24 | 2009-10-13 | 한양대학교 산학협력단 | 표시 장치 및 그 구동 방법 |
TWI444967B (zh) * | 2007-06-15 | 2014-07-11 | Panasonic Corp | Image display device |
US8179343B2 (en) * | 2007-06-29 | 2012-05-15 | Canon Kabushiki Kaisha | Display apparatus and driving method of display apparatus |
US7852301B2 (en) * | 2007-10-12 | 2010-12-14 | Himax Technologies Limited | Pixel circuit |
KR101429711B1 (ko) | 2007-11-06 | 2014-08-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그것의 구동 방법 |
JP5186950B2 (ja) * | 2008-02-28 | 2013-04-24 | ソニー株式会社 | El表示パネル、電子機器及びel表示パネルの駆動方法 |
US8358258B1 (en) * | 2008-03-16 | 2013-01-22 | Nongqiang Fan | Active matrix display having pixel element with light-emitting element |
US8546876B2 (en) | 2008-03-20 | 2013-10-01 | Micron Technology, Inc. | Systems and devices including multi-transistor cells and methods of using, making, and operating the same |
US7969776B2 (en) * | 2008-04-03 | 2011-06-28 | Micron Technology, Inc. | Data cells with drivers and methods of making and operating the same |
CN102057418B (zh) | 2008-04-18 | 2014-11-12 | 伊格尼斯创新公司 | 用于发光器件显示器的系统和驱动方法 |
JP5141363B2 (ja) | 2008-05-03 | 2013-02-13 | ソニー株式会社 | 半導体デバイス、表示パネル及び電子機器 |
JP5183336B2 (ja) * | 2008-07-15 | 2013-04-17 | 富士フイルム株式会社 | 表示装置 |
CA2637343A1 (en) | 2008-07-29 | 2010-01-29 | Ignis Innovation Inc. | Improving the display source driver |
KR100952826B1 (ko) * | 2008-10-13 | 2010-04-15 | 삼성모바일디스플레이주식회사 | 화소 및 이를 이용한 유기전계발광 표시장치 |
US9370075B2 (en) | 2008-12-09 | 2016-06-14 | Ignis Innovation Inc. | System and method for fast compensation programming of pixels in a display |
WO2010100938A1 (ja) * | 2009-03-06 | 2010-09-10 | パナソニック株式会社 | 画像表示装置およびその駆動方法 |
JP2010237362A (ja) * | 2009-03-31 | 2010-10-21 | Sony Corp | パネル及びその制御方法、表示装置、並びに電子機器 |
WO2010137268A1 (ja) * | 2009-05-26 | 2010-12-02 | パナソニック株式会社 | 画像表示装置およびその駆動方法 |
US8633873B2 (en) | 2009-11-12 | 2014-01-21 | Ignis Innovation Inc. | Stable fast programming scheme for displays |
CA2687631A1 (en) | 2009-12-06 | 2011-06-06 | Ignis Innovation Inc | Low power driving scheme for display applications |
CA2696778A1 (en) | 2010-03-17 | 2011-09-17 | Ignis Innovation Inc. | Lifetime, uniformity, parameter extraction methods |
WO2012032562A1 (ja) * | 2010-09-06 | 2012-03-15 | パナソニック株式会社 | 表示装置およびその駆動方法 |
JP2012073367A (ja) * | 2010-09-28 | 2012-04-12 | Casio Comput Co Ltd | 発光駆動回路、発光装置及びその駆動制御方法、並びに電子機器 |
CN109272933A (zh) | 2011-05-17 | 2019-01-25 | 伊格尼斯创新公司 | 操作显示器的方法 |
US20140368491A1 (en) | 2013-03-08 | 2014-12-18 | Ignis Innovation Inc. | Pixel circuits for amoled displays |
US9886899B2 (en) | 2011-05-17 | 2018-02-06 | Ignis Innovation Inc. | Pixel Circuits for AMOLED displays |
US9351368B2 (en) | 2013-03-08 | 2016-05-24 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
US9606607B2 (en) | 2011-05-17 | 2017-03-28 | Ignis Innovation Inc. | Systems and methods for display systems with dynamic power control |
EP2945147B1 (en) | 2011-05-28 | 2018-08-01 | Ignis Innovation Inc. | Method for fast compensation programming of pixels in a display |
US9070775B2 (en) | 2011-08-03 | 2015-06-30 | Ignis Innovations Inc. | Thin film transistor |
US8901579B2 (en) | 2011-08-03 | 2014-12-02 | Ignis Innovation Inc. | Organic light emitting diode and method of manufacturing |
US10089924B2 (en) | 2011-11-29 | 2018-10-02 | Ignis Innovation Inc. | Structural and low-frequency non-uniformity compensation |
US9385169B2 (en) | 2011-11-29 | 2016-07-05 | Ignis Innovation Inc. | Multi-functional active matrix organic light-emitting diode display |
US9747834B2 (en) | 2012-05-11 | 2017-08-29 | Ignis Innovation Inc. | Pixel circuits including feedback capacitors and reset capacitors, and display systems therefore |
TWI462080B (zh) * | 2012-08-14 | 2014-11-21 | Au Optronics Corp | 主動式有機發光二極體電路及其操作方法 |
US9336717B2 (en) | 2012-12-11 | 2016-05-10 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
US9786223B2 (en) | 2012-12-11 | 2017-10-10 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
KR101992405B1 (ko) * | 2012-12-13 | 2019-06-25 | 삼성디스플레이 주식회사 | 화소 및 이를 이용한 유기전계발광 표시장치 |
CA2894717A1 (en) | 2015-06-19 | 2016-12-19 | Ignis Innovation Inc. | Optoelectronic device characterization in array with shared sense line |
US9721505B2 (en) | 2013-03-08 | 2017-08-01 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
WO2014140992A1 (en) | 2013-03-15 | 2014-09-18 | Ignis Innovation Inc. | Dynamic adjustment of touch resolutions on an amoled display |
KR102062875B1 (ko) * | 2013-09-10 | 2020-01-07 | 삼성디스플레이 주식회사 | 화소 및 이를 이용한 유기전계발광 표시장치 |
EP2860720A1 (en) * | 2013-10-10 | 2015-04-15 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Electro-optical unit for a picture element that can be programmed by electromagnetic radiation |
US9502653B2 (en) | 2013-12-25 | 2016-11-22 | Ignis Innovation Inc. | Electrode contacts |
JP6506961B2 (ja) * | 2013-12-27 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
KR20150080198A (ko) * | 2013-12-31 | 2015-07-09 | 엘지디스플레이 주식회사 | 유기 발광 다이오드 표시 장치 및 그의 구동 방법 |
US10997901B2 (en) | 2014-02-28 | 2021-05-04 | Ignis Innovation Inc. | Display system |
US10176752B2 (en) | 2014-03-24 | 2019-01-08 | Ignis Innovation Inc. | Integrated gate driver |
CA2872563A1 (en) | 2014-11-28 | 2016-05-28 | Ignis Innovation Inc. | High pixel density array architecture |
JP6618779B2 (ja) | 2014-11-28 | 2019-12-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CA2873476A1 (en) | 2014-12-08 | 2016-06-08 | Ignis Innovation Inc. | Smart-pixel display architecture |
CA2886862A1 (en) | 2015-04-01 | 2016-10-01 | Ignis Innovation Inc. | Adjusting display brightness for avoiding overheating and/or accelerated aging |
US10657895B2 (en) | 2015-07-24 | 2020-05-19 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
CA2898282A1 (en) | 2015-07-24 | 2017-01-24 | Ignis Innovation Inc. | Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays |
US10373554B2 (en) | 2015-07-24 | 2019-08-06 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
CA2908285A1 (en) | 2015-10-14 | 2017-04-14 | Ignis Innovation Inc. | Driver with multiple color pixel structure |
CA2909813A1 (en) | 2015-10-26 | 2017-04-26 | Ignis Innovation Inc | High ppi pattern orientation |
US10121430B2 (en) * | 2015-11-16 | 2018-11-06 | Apple Inc. | Displays with series-connected switching transistors |
US9961178B2 (en) * | 2016-03-24 | 2018-05-01 | Motorola Mobility Llc | Embedded active matrix organic light emitting diode (AMOLED) fingerprint sensor |
CN105719598A (zh) * | 2016-04-12 | 2016-06-29 | 云南北方奥雷德光电科技股份有限公司 | Amoled微型显示器内部集成程控负压产生器 |
DE102017222059A1 (de) | 2016-12-06 | 2018-06-07 | Ignis Innovation Inc. | Pixelschaltungen zur Minderung von Hysterese |
US10311789B2 (en) * | 2017-01-26 | 2019-06-04 | Aot Limited | Pixel circuits and pixel array |
CN106782340B (zh) * | 2017-03-16 | 2018-09-07 | 深圳市华星光电技术有限公司 | 一种像素驱动电路及oled显示装置 |
US10714018B2 (en) | 2017-05-17 | 2020-07-14 | Ignis Innovation Inc. | System and method for loading image correction data for displays |
US11025899B2 (en) | 2017-08-11 | 2021-06-01 | Ignis Innovation Inc. | Optical correction systems and methods for correcting non-uniformity of emissive display devices |
US10971078B2 (en) | 2018-02-12 | 2021-04-06 | Ignis Innovation Inc. | Pixel measurement through data line |
CN112313804A (zh) * | 2018-07-13 | 2021-02-02 | 奥林巴斯株式会社 | 摄像装置 |
TWI688933B (zh) | 2018-07-16 | 2020-03-21 | 友達光電股份有限公司 | 顯示裝置 |
CN109698227A (zh) * | 2019-03-01 | 2019-04-30 | 深圳市华星光电半导体显示技术有限公司 | 一种oled显示面板 |
CN110310603A (zh) * | 2019-07-09 | 2019-10-08 | 京东方科技集团股份有限公司 | 一种像素驱动电路及其驱动方法、显示面板、显示装置 |
CN112331150A (zh) * | 2020-11-05 | 2021-02-05 | Tcl华星光电技术有限公司 | 显示装置及发光面板 |
CN112419983B (zh) * | 2020-12-01 | 2022-08-02 | 重庆邮电大学 | 一种新型amoled像素驱动电路及驱动方法 |
Family Cites Families (369)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4354162A (en) | 1981-02-09 | 1982-10-12 | National Semiconductor Corporation | Wide dynamic range control amplifier with offset correction |
JPS61110198A (ja) | 1984-11-05 | 1986-05-28 | 株式会社東芝 | マトリクス形表示装置 |
JPS61161093A (ja) | 1985-01-09 | 1986-07-21 | Sony Corp | ダイナミツクユニフオミテイ補正装置 |
EP0269744B1 (en) | 1986-05-13 | 1994-12-14 | Sanyo Electric Co., Ltd | Circuit for driving an image display device |
JP2623087B2 (ja) | 1986-09-27 | 1997-06-25 | 潤一 西澤 | カラーディスプレー装置 |
US6323832B1 (en) | 1986-09-27 | 2001-11-27 | Junichi Nishizawa | Color display device |
US4975691A (en) | 1987-06-16 | 1990-12-04 | Interstate Electronics Corporation | Scan inversion symmetric drive |
US4963860A (en) | 1988-02-01 | 1990-10-16 | General Electric Company | Integrated matrix display circuitry |
US4996523A (en) | 1988-10-20 | 1991-02-26 | Eastman Kodak Company | Electroluminescent storage display with improved intensity driver circuits |
DE69012110T2 (de) | 1990-06-11 | 1995-03-30 | Ibm | Anzeigeeinrichtung. |
US5222082A (en) | 1991-02-28 | 1993-06-22 | Thomson Consumer Electronics, S.A. | Shift register useful as a select line scanner for liquid crystal display |
JP3163637B2 (ja) | 1991-03-19 | 2001-05-08 | 株式会社日立製作所 | 液晶表示装置の駆動方法 |
US5280280A (en) | 1991-05-24 | 1994-01-18 | Robert Hotto | DC integrating display driver employing pixel status memories |
US5589847A (en) | 1991-09-23 | 1996-12-31 | Xerox Corporation | Switched capacitor analog circuits using polysilicon thin film technology |
US5266515A (en) | 1992-03-02 | 1993-11-30 | Motorola, Inc. | Fabricating dual gate thin film transistors |
EP0693210A4 (en) | 1993-04-05 | 1996-11-20 | Cirrus Logic Inc | METHOD AND DEVICE FOR COMPENSATING FOR IMAGE SPLIT IN LIQUID CRYSTAL DISPLAYS |
JPH06347753A (ja) | 1993-04-30 | 1994-12-22 | Prime View Hk Ltd | アモルファス・シリコン薄膜トランジスタ装置の閾値電圧を回復するための方法と装置 |
JPH0799321A (ja) | 1993-05-27 | 1995-04-11 | Sony Corp | 薄膜半導体素子の製造方法および製造装置 |
US5712653A (en) | 1993-12-27 | 1998-01-27 | Sharp Kabushiki Kaisha | Image display scanning circuit with outputs from sequentially switched pulse signals |
US5714968A (en) | 1994-08-09 | 1998-02-03 | Nec Corporation | Current-dependent light-emitting element drive circuit for use in active matrix display device |
US5747928A (en) | 1994-10-07 | 1998-05-05 | Iowa State University Research Foundation, Inc. | Flexible panel display having thin film transistors driving polymer light-emitting diodes |
US5684365A (en) | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
US5498880A (en) | 1995-01-12 | 1996-03-12 | E. I. Du Pont De Nemours And Company | Image capture panel using a solid state device |
US5686935A (en) | 1995-03-06 | 1997-11-11 | Thomson Consumer Electronics, S.A. | Data line drivers with column initialization transistor |
US5619033A (en) | 1995-06-07 | 1997-04-08 | Xerox Corporation | Layered solid state photodiode sensor array |
US5748160A (en) | 1995-08-21 | 1998-05-05 | Mororola, Inc. | Active driven LED matrices |
JP3272209B2 (ja) | 1995-09-07 | 2002-04-08 | アルプス電気株式会社 | Lcd駆動回路 |
JPH0990405A (ja) | 1995-09-21 | 1997-04-04 | Sharp Corp | 薄膜トランジスタ |
US5790234A (en) | 1995-12-27 | 1998-08-04 | Canon Kabushiki Kaisha | Eyeball detection apparatus |
US5923794A (en) | 1996-02-06 | 1999-07-13 | Polaroid Corporation | Current-mediated active-pixel image sensing device with current reset |
JP3266177B2 (ja) | 1996-09-04 | 2002-03-18 | 住友電気工業株式会社 | 電流ミラー回路とそれを用いた基準電圧発生回路及び発光素子駆動回路 |
JP3027126B2 (ja) | 1996-11-26 | 2000-03-27 | 松下電器産業株式会社 | 液晶表示装置 |
US6046716A (en) | 1996-12-19 | 2000-04-04 | Colorado Microdisplay, Inc. | Display system having electrode modulation to alter a state of an electro-optic layer |
US5874803A (en) | 1997-09-09 | 1999-02-23 | The Trustees Of Princeton University | Light emitting device with stack of OLEDS and phosphor downconverter |
JPH10209854A (ja) | 1997-01-23 | 1998-08-07 | Mitsubishi Electric Corp | ボディ電圧制御型半導体集積回路 |
TW441136B (en) | 1997-01-28 | 2001-06-16 | Casio Computer Co Ltd | An electroluminescent display device and a driving method thereof |
US5917280A (en) | 1997-02-03 | 1999-06-29 | The Trustees Of Princeton University | Stacked organic light emitting devices |
EP0923067B1 (en) | 1997-03-12 | 2004-08-04 | Seiko Epson Corporation | Pixel circuit, display device and electronic equipment having current-driven light-emitting device |
JPH10254410A (ja) | 1997-03-12 | 1998-09-25 | Pioneer Electron Corp | 有機エレクトロルミネッセンス表示装置及びその駆動方法 |
US5903248A (en) | 1997-04-11 | 1999-05-11 | Spatialight, Inc. | Active matrix display having pixel driving circuits with integrated charge pumps |
US5952789A (en) * | 1997-04-14 | 1999-09-14 | Sarnoff Corporation | Active matrix organic light emitting diode (amoled) display pixel structure and data load/illuminate circuit therefor |
US5815303A (en) | 1997-06-26 | 1998-09-29 | Xerox Corporation | Fault tolerant projective display having redundant light modulators |
US6023259A (en) | 1997-07-11 | 2000-02-08 | Fed Corporation | OLED active matrix using a single transistor current mode pixel design |
KR100242244B1 (ko) | 1997-08-09 | 2000-02-01 | 구본준 | 스캐닝 회로 |
JP3580092B2 (ja) | 1997-08-21 | 2004-10-20 | セイコーエプソン株式会社 | アクティブマトリクス型表示装置 |
US20010043173A1 (en) | 1997-09-04 | 2001-11-22 | Ronald Roy Troutman | Field sequential gray in active matrix led display using complementary transistor pixel circuits |
US6300944B1 (en) | 1997-09-12 | 2001-10-09 | Micron Technology, Inc. | Alternative power for a portable computer via solar cells |
US6738035B1 (en) | 1997-09-22 | 2004-05-18 | Nongqiang Fan | Active matrix LCD based on diode switches and methods of improving display uniformity of same |
JP3767877B2 (ja) | 1997-09-29 | 2006-04-19 | 三菱化学株式会社 | アクティブマトリックス発光ダイオード画素構造およびその方法 |
US6909419B2 (en) | 1997-10-31 | 2005-06-21 | Kopin Corporation | Portable microdisplay system |
TW491954B (en) | 1997-11-10 | 2002-06-21 | Hitachi Device Eng | Liquid crystal display device |
JP3552500B2 (ja) | 1997-11-12 | 2004-08-11 | セイコーエプソン株式会社 | 論理振幅レベル変換回路,液晶装置及び電子機器 |
US6069365A (en) | 1997-11-25 | 2000-05-30 | Alan Y. Chow | Optical processor based imaging system |
JPH11231805A (ja) | 1998-02-10 | 1999-08-27 | Sanyo Electric Co Ltd | 表示装置 |
JPH11251059A (ja) | 1998-02-27 | 1999-09-17 | Sanyo Electric Co Ltd | カラー表示装置 |
US6259424B1 (en) | 1998-03-04 | 2001-07-10 | Victor Company Of Japan, Ltd. | Display matrix substrate, production method of the same and display matrix circuit |
US6097360A (en) | 1998-03-19 | 2000-08-01 | Holloman; Charles J | Analog driver for LED or similar display element |
JP3252897B2 (ja) | 1998-03-31 | 2002-02-04 | 日本電気株式会社 | 素子駆動装置および方法、画像表示装置 |
JP3702096B2 (ja) | 1998-06-08 | 2005-10-05 | 三洋電機株式会社 | 薄膜トランジスタ及び表示装置 |
CA2242720C (en) | 1998-07-09 | 2000-05-16 | Ibm Canada Limited-Ibm Canada Limitee | Programmable led driver |
JP2953465B1 (ja) | 1998-08-14 | 1999-09-27 | 日本電気株式会社 | 定電流駆動回路 |
US6316786B1 (en) | 1998-08-29 | 2001-11-13 | International Business Machines Corporation | Organic opto-electronic devices |
JP3644830B2 (ja) | 1998-09-01 | 2005-05-11 | パイオニア株式会社 | 有機エレクトロルミネッセンスパネルとその製造方法 |
JP3648999B2 (ja) | 1998-09-11 | 2005-05-18 | セイコーエプソン株式会社 | 液晶表示装置、電子機器および液晶層の電圧検出方法 |
US6166489A (en) | 1998-09-15 | 2000-12-26 | The Trustees Of Princeton University | Light emitting device using dual light emitting stacks to achieve full-color emission |
US6274887B1 (en) | 1998-11-02 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
US6617644B1 (en) | 1998-11-09 | 2003-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
US7141821B1 (en) | 1998-11-10 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an impurity gradient in the impurity regions and method of manufacture |
US7022556B1 (en) | 1998-11-11 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Exposure device, exposure method and method of manufacturing semiconductor device |
US6518594B1 (en) | 1998-11-16 | 2003-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor devices |
US6512271B1 (en) | 1998-11-16 | 2003-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6420758B1 (en) | 1998-11-17 | 2002-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an impurity region overlapping a gate electrode |
US6909114B1 (en) | 1998-11-17 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having LDD regions |
US6489952B1 (en) | 1998-11-17 | 2002-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type semiconductor display device |
US6501098B2 (en) | 1998-11-25 | 2002-12-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
US6365917B1 (en) | 1998-11-25 | 2002-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2000174282A (ja) | 1998-12-03 | 2000-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US7235810B1 (en) | 1998-12-03 | 2007-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US6420988B1 (en) | 1998-12-03 | 2002-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Digital analog converter and electronic device using the same |
KR20020006019A (ko) | 1998-12-14 | 2002-01-18 | 도날드 피. 게일 | 휴대용 마이크로디스플레이 시스템 |
US6524895B2 (en) | 1998-12-25 | 2003-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US6573195B1 (en) | 1999-01-26 | 2003-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device by performing a heat-treatment in a hydrogen atmosphere |
JP3686769B2 (ja) | 1999-01-29 | 2005-08-24 | 日本電気株式会社 | 有機el素子駆動装置と駆動方法 |
JP2000231346A (ja) | 1999-02-09 | 2000-08-22 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
US7697052B1 (en) | 1999-02-17 | 2010-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Electronic view finder utilizing an organic electroluminescence display |
US6576926B1 (en) | 1999-02-23 | 2003-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US6157583A (en) | 1999-03-02 | 2000-12-05 | Motorola, Inc. | Integrated circuit memory having a fuse detect circuit and method therefor |
US6306694B1 (en) | 1999-03-12 | 2001-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Process of fabricating a semiconductor device |
US6468638B2 (en) | 1999-03-16 | 2002-10-22 | Alien Technology Corporation | Web process interconnect in electronic assemblies |
US6531713B1 (en) | 1999-03-19 | 2003-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and manufacturing method thereof |
US7402467B1 (en) | 1999-03-26 | 2008-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US6399988B1 (en) | 1999-03-26 | 2002-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor having lightly doped regions |
US6861670B1 (en) | 1999-04-01 | 2005-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having multi-layer wiring |
US6878968B1 (en) | 1999-05-10 | 2005-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6690344B1 (en) | 1999-05-14 | 2004-02-10 | Ngk Insulators, Ltd. | Method and apparatus for driving device and display |
JP3289276B2 (ja) | 1999-05-27 | 2002-06-04 | 日本電気株式会社 | 半導体装置 |
KR100296113B1 (ko) | 1999-06-03 | 2001-07-12 | 구본준, 론 위라하디락사 | 전기발광소자 |
JP4337171B2 (ja) | 1999-06-14 | 2009-09-30 | ソニー株式会社 | 表示装置 |
JP4092857B2 (ja) | 1999-06-17 | 2008-05-28 | ソニー株式会社 | 画像表示装置 |
TW526455B (en) | 1999-07-14 | 2003-04-01 | Sony Corp | Current drive circuit and display comprising the same, pixel circuit, and drive method |
US7379039B2 (en) | 1999-07-14 | 2008-05-27 | Sony Corporation | Current drive circuit and display device using same pixel circuit, and drive method |
EP1129446A1 (en) | 1999-09-11 | 2001-09-05 | Koninklijke Philips Electronics N.V. | Active matrix electroluminescent display device |
US6641933B1 (en) | 1999-09-24 | 2003-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting EL display device |
KR20010080746A (ko) | 1999-10-12 | 2001-08-22 | 요트.게.아. 롤페즈 | Led 디스플레이 디바이스 |
US6587086B1 (en) | 1999-10-26 | 2003-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
US6392617B1 (en) * | 1999-10-27 | 2002-05-21 | Agilent Technologies, Inc. | Active matrix light emitting diode display |
US6384427B1 (en) | 1999-10-29 | 2002-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
US6573584B1 (en) | 1999-10-29 | 2003-06-03 | Kyocera Corporation | Thin film electronic device and circuit board mounting the same |
KR100685307B1 (ko) | 1999-11-05 | 2007-02-22 | 엘지.필립스 엘시디 주식회사 | 쉬프트 레지스터 |
JP2001147659A (ja) * | 1999-11-18 | 2001-05-29 | Sony Corp | 表示装置 |
JP4727029B2 (ja) | 1999-11-29 | 2011-07-20 | 株式会社半導体エネルギー研究所 | El表示装置、電気器具及びel表示装置用の半導体素子基板 |
TW587239B (en) | 1999-11-30 | 2004-05-11 | Semiconductor Energy Lab | Electric device |
TW511298B (en) | 1999-12-15 | 2002-11-21 | Semiconductor Energy Lab | EL display device |
US6307322B1 (en) | 1999-12-28 | 2001-10-23 | Sarnoff Corporation | Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage |
US6809710B2 (en) | 2000-01-21 | 2004-10-26 | Emagin Corporation | Gray scale pixel driver for electronic display and method of operation therefor |
US20030147017A1 (en) | 2000-02-15 | 2003-08-07 | Jean-Daniel Bonny | Display device with multiple row addressing |
US6780687B2 (en) | 2000-01-28 | 2004-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a heat absorbing layer |
US6856307B2 (en) | 2000-02-01 | 2005-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and method of driving the same |
US6559594B2 (en) | 2000-02-03 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP3523139B2 (ja) | 2000-02-07 | 2004-04-26 | 日本電気株式会社 | 可変利得回路 |
JP2001230664A (ja) | 2000-02-15 | 2001-08-24 | Mitsubishi Electric Corp | 半導体集積回路 |
US6414661B1 (en) | 2000-02-22 | 2002-07-02 | Sarnoff Corporation | Method and apparatus for calibrating display devices and automatically compensating for loss in their efficiency over time |
WO2001063310A1 (en) | 2000-02-23 | 2001-08-30 | Koninklijke Philips Electronics N.V. | Integrated circuit with test interface |
JP2001318627A (ja) | 2000-02-29 | 2001-11-16 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP3495311B2 (ja) | 2000-03-24 | 2004-02-09 | Necエレクトロニクス株式会社 | クロック制御回路 |
TW521226B (en) | 2000-03-27 | 2003-02-21 | Semiconductor Energy Lab | Electro-optical device |
TW484238B (en) | 2000-03-27 | 2002-04-21 | Semiconductor Energy Lab | Light emitting device and a method of manufacturing the same |
JP2001284592A (ja) | 2000-03-29 | 2001-10-12 | Sony Corp | 薄膜半導体装置及びその駆動方法 |
GB0008019D0 (en) | 2000-03-31 | 2000-05-17 | Koninkl Philips Electronics Nv | Display device having current-addressed pixels |
US6528950B2 (en) | 2000-04-06 | 2003-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and driving method |
US6706544B2 (en) | 2000-04-19 | 2004-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and fabricating method thereof |
US6611108B2 (en) | 2000-04-26 | 2003-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and driving method thereof |
US6583576B2 (en) | 2000-05-08 | 2003-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, and electric device using the same |
US6605993B2 (en) | 2000-05-16 | 2003-08-12 | Fujitsu Limited | Operational amplifier circuit |
TW493153B (en) | 2000-05-22 | 2002-07-01 | Koninkl Philips Electronics Nv | Display device |
EP1158483A3 (en) | 2000-05-24 | 2003-02-05 | Eastman Kodak Company | Solid-state display with reference pixel |
US20020030647A1 (en) | 2000-06-06 | 2002-03-14 | Michael Hack | Uniform active matrix oled displays |
JP2001356741A (ja) | 2000-06-14 | 2001-12-26 | Sanyo Electric Co Ltd | レベルシフタ及びそれを用いたアクティブマトリクス型表示装置 |
JP3723747B2 (ja) | 2000-06-16 | 2005-12-07 | 松下電器産業株式会社 | 表示装置およびその駆動方法 |
TW503565B (en) | 2000-06-22 | 2002-09-21 | Semiconductor Energy Lab | Display device |
US6738034B2 (en) | 2000-06-27 | 2004-05-18 | Hitachi, Ltd. | Picture image display device and method of driving the same |
JP3877049B2 (ja) | 2000-06-27 | 2007-02-07 | 株式会社日立製作所 | 画像表示装置及びその駆動方法 |
TW502854U (en) | 2000-07-20 | 2002-09-11 | Koninkl Philips Electronics Nv | Display device |
JP4123711B2 (ja) | 2000-07-24 | 2008-07-23 | セイコーエプソン株式会社 | 電気光学パネルの駆動方法、電気光学装置、および電子機器 |
US6760005B2 (en) | 2000-07-25 | 2004-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit of a display device |
JP4014831B2 (ja) | 2000-09-04 | 2007-11-28 | 株式会社半導体エネルギー研究所 | El表示装置及びその駆動方法 |
TW521249B (en) | 2000-09-05 | 2003-02-21 | Toshiba Corp | Display apparatus and its driving method |
US7315295B2 (en) | 2000-09-29 | 2008-01-01 | Seiko Epson Corporation | Driving method for electro-optical device, electro-optical device, and electronic apparatus |
JP3838063B2 (ja) | 2000-09-29 | 2006-10-25 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置の駆動方法 |
JP2002162934A (ja) | 2000-09-29 | 2002-06-07 | Eastman Kodak Co | 発光フィードバックのフラットパネルディスプレイ |
TW550530B (en) * | 2000-10-27 | 2003-09-01 | Semiconductor Energy Lab | Display device and method of driving the same |
JP3695308B2 (ja) | 2000-10-27 | 2005-09-14 | 日本電気株式会社 | アクティブマトリクス有機el表示装置及びその製造方法 |
JP3902938B2 (ja) | 2000-10-31 | 2007-04-11 | キヤノン株式会社 | 有機発光素子の製造方法及び有機発光表示体の製造方法、有機発光素子及び有機発光表示体 |
US6320325B1 (en) | 2000-11-06 | 2001-11-20 | Eastman Kodak Company | Emissive display with luminance feedback from a representative pixel |
JP3620490B2 (ja) | 2000-11-22 | 2005-02-16 | ソニー株式会社 | アクティブマトリクス型表示装置 |
JP2002268576A (ja) | 2000-12-05 | 2002-09-20 | Matsushita Electric Ind Co Ltd | 画像表示装置、画像表示装置の製造方法及び画像表示ドライバic |
TW518532B (en) | 2000-12-26 | 2003-01-21 | Hannstar Display Corp | Driving circuit of gate control line and method |
TW561445B (en) * | 2001-01-02 | 2003-11-11 | Chi Mei Optoelectronics Corp | OLED active driving system with current feedback |
US6580657B2 (en) | 2001-01-04 | 2003-06-17 | International Business Machines Corporation | Low-power organic light emitting diode pixel circuit |
JP3593982B2 (ja) | 2001-01-15 | 2004-11-24 | ソニー株式会社 | アクティブマトリクス型表示装置およびアクティブマトリクス型有機エレクトロルミネッセンス表示装置、並びにそれらの駆動方法 |
US6323631B1 (en) | 2001-01-18 | 2001-11-27 | Sunplus Technology Co., Ltd. | Constant current driver with auto-clamped pre-charge function |
JP2002215063A (ja) | 2001-01-19 | 2002-07-31 | Sony Corp | アクティブマトリクス型表示装置 |
JP3639830B2 (ja) | 2001-02-05 | 2005-04-20 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 液晶表示装置 |
US20040129933A1 (en) | 2001-02-16 | 2004-07-08 | Arokia Nathan | Pixel current driver for organic light emitting diode displays |
CA2507276C (en) | 2001-02-16 | 2006-08-22 | Ignis Innovation Inc. | Pixel current driver for organic light emitting diode displays |
US7248236B2 (en) | 2001-02-16 | 2007-07-24 | Ignis Innovation Inc. | Organic light emitting diode display having shield electrodes |
US7569849B2 (en) | 2001-02-16 | 2009-08-04 | Ignis Innovation Inc. | Pixel driver circuit and pixel circuit having the pixel driver circuit |
SG102681A1 (en) | 2001-02-19 | 2004-03-26 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
US6753654B2 (en) | 2001-02-21 | 2004-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic appliance |
JP4212815B2 (ja) | 2001-02-21 | 2009-01-21 | 株式会社半導体エネルギー研究所 | 発光装置 |
CN100428592C (zh) | 2001-03-05 | 2008-10-22 | 富士施乐株式会社 | 发光元件驱动装置和发光元件驱动系统 |
US6597203B2 (en) | 2001-03-14 | 2003-07-22 | Micron Technology, Inc. | CMOS gate array with vertical transistors |
JP2002278513A (ja) | 2001-03-19 | 2002-09-27 | Sharp Corp | 電気光学装置 |
US6661180B2 (en) | 2001-03-22 | 2003-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, driving method for the same and electronic apparatus |
JP3788916B2 (ja) | 2001-03-30 | 2006-06-21 | 株式会社日立製作所 | 発光型表示装置 |
US7136058B2 (en) | 2001-04-27 | 2006-11-14 | Kabushiki Kaisha Toshiba | Display apparatus, digital-to-analog conversion circuit and digital-to-analog conversion method |
US6594606B2 (en) | 2001-05-09 | 2003-07-15 | Clare Micronix Integrated Systems, Inc. | Matrix element voltage sensing for precharge |
US6963321B2 (en) | 2001-05-09 | 2005-11-08 | Clare Micronix Integrated Systems, Inc. | Method of providing pulse amplitude modulation for OLED display drivers |
JP2002351409A (ja) | 2001-05-23 | 2002-12-06 | Internatl Business Mach Corp <Ibm> | 液晶表示装置、液晶ディスプレイ駆動回路、液晶ディスプレイの駆動方法、およびプログラム |
US7012588B2 (en) | 2001-06-05 | 2006-03-14 | Eastman Kodak Company | Method for saving power in an organic electroluminescent display using white light emitting elements |
KR100437765B1 (ko) | 2001-06-15 | 2004-06-26 | 엘지전자 주식회사 | 고온용 기판을 이용한 박막트랜지스터 제조방법과 이를 이용한 표시장치의 제조방법 |
KR100593276B1 (ko) | 2001-06-22 | 2006-06-26 | 탑폴리 옵토일렉트로닉스 코포레이션 | 유기 발광 다이오드 픽셀 회로 구동 방법 및 구동기 |
KR100743103B1 (ko) | 2001-06-22 | 2007-07-27 | 엘지.필립스 엘시디 주식회사 | 일렉트로 루미네센스 패널 |
US6956547B2 (en) | 2001-06-30 | 2005-10-18 | Lg.Philips Lcd Co., Ltd. | Driving circuit and method of driving an organic electroluminescence device |
JP2003022035A (ja) | 2001-07-10 | 2003-01-24 | Sharp Corp | 有機elパネルおよびその製造方法 |
JP2003043994A (ja) | 2001-07-27 | 2003-02-14 | Canon Inc | アクティブマトリックス型ディスプレイ |
JP3800050B2 (ja) | 2001-08-09 | 2006-07-19 | 日本電気株式会社 | 表示装置の駆動回路 |
DE10140991C2 (de) | 2001-08-21 | 2003-08-21 | Osram Opto Semiconductors Gmbh | Organische Leuchtdiode mit Energieversorgung, Herstellungsverfahren dazu und Anwendungen |
CN100371962C (zh) | 2001-08-29 | 2008-02-27 | 株式会社半导体能源研究所 | 发光器件、发光器件驱动方法、以及电子设备 |
JP2003076331A (ja) | 2001-08-31 | 2003-03-14 | Seiko Epson Corp | 表示装置および電子機器 |
US7027015B2 (en) | 2001-08-31 | 2006-04-11 | Intel Corporation | Compensating organic light emitting device displays for color variations |
JP4197647B2 (ja) | 2001-09-21 | 2008-12-17 | 株式会社半導体エネルギー研究所 | 表示装置及び半導体装置 |
SG120889A1 (en) | 2001-09-28 | 2006-04-26 | Semiconductor Energy Lab | A light emitting device and electronic apparatus using the same |
SG120888A1 (en) | 2001-09-28 | 2006-04-26 | Semiconductor Energy Lab | A light emitting device and electronic apparatus using the same |
US20030071821A1 (en) | 2001-10-11 | 2003-04-17 | Sundahl Robert C. | Luminance compensation for emissive displays |
CN1139907C (zh) | 2001-10-12 | 2004-02-25 | 清华大学 | 一种有机电致发光显示器件灰度显示的驱动方法和驱动电路 |
US20030169219A1 (en) | 2001-10-19 | 2003-09-11 | Lechevalier Robert | System and method for exposure timing compensation for row resistance |
WO2003034383A2 (en) | 2001-10-19 | 2003-04-24 | Clare Micronix Integrated Systems, Inc. | Drive circuit for adaptive control of precharge current and method therefor |
WO2003034389A2 (en) | 2001-10-19 | 2003-04-24 | Clare Micronix Integrated Systems, Inc. | System and method for providing pulse amplitude modulation for oled display drivers |
US6861810B2 (en) | 2001-10-23 | 2005-03-01 | Fpd Systems | Organic electroluminescent display device driving method and apparatus |
KR100940342B1 (ko) * | 2001-11-13 | 2010-02-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 구동방법 |
TW518543B (en) | 2001-11-14 | 2003-01-21 | Ind Tech Res Inst | Integrated current driving framework of active matrix OLED |
JP4251801B2 (ja) | 2001-11-15 | 2009-04-08 | パナソニック株式会社 | El表示装置およびel表示装置の駆動方法 |
US7071932B2 (en) | 2001-11-20 | 2006-07-04 | Toppoly Optoelectronics Corporation | Data voltage current drive amoled pixel circuit |
JP4050503B2 (ja) | 2001-11-29 | 2008-02-20 | 株式会社日立製作所 | 表示装置 |
JP4009097B2 (ja) | 2001-12-07 | 2007-11-14 | 日立電線株式会社 | 発光装置及びその製造方法、ならびに発光装置の製造に用いるリードフレーム |
JP2003177709A (ja) | 2001-12-13 | 2003-06-27 | Seiko Epson Corp | 発光素子用の画素回路 |
JP3800404B2 (ja) | 2001-12-19 | 2006-07-26 | 株式会社日立製作所 | 画像表示装置 |
GB0130411D0 (en) | 2001-12-20 | 2002-02-06 | Koninkl Philips Electronics Nv | Active matrix electroluminescent display device |
CN1293421C (zh) | 2001-12-27 | 2007-01-03 | Lg.菲利浦Lcd株式会社 | 电致发光显示面板及用于操作它的方法 |
JP2003195810A (ja) | 2001-12-28 | 2003-07-09 | Casio Comput Co Ltd | 駆動回路、駆動装置及び光学要素の駆動方法 |
US7274363B2 (en) | 2001-12-28 | 2007-09-25 | Pioneer Corporation | Panel display driving device and driving method |
JP4029840B2 (ja) | 2002-01-17 | 2008-01-09 | 日本電気株式会社 | マトリックス型電流負荷駆動回路を備えた半導体装置とその駆動方法 |
TWI258317B (en) | 2002-01-25 | 2006-07-11 | Semiconductor Energy Lab | A display device and method for manufacturing thereof |
US20030140958A1 (en) | 2002-01-28 | 2003-07-31 | Cheng-Chieh Yang | Solar photoelectric module |
JP2003295825A (ja) | 2002-02-04 | 2003-10-15 | Sanyo Electric Co Ltd | 表示装置 |
US6720942B2 (en) | 2002-02-12 | 2004-04-13 | Eastman Kodak Company | Flat-panel light emitting pixel with luminance feedback |
JP2003308046A (ja) | 2002-02-18 | 2003-10-31 | Sanyo Electric Co Ltd | 表示装置 |
JP3613253B2 (ja) * | 2002-03-14 | 2005-01-26 | 日本電気株式会社 | 電流制御素子の駆動回路及び画像表示装置 |
WO2003075256A1 (fr) * | 2002-03-05 | 2003-09-12 | Nec Corporation | Affichage d'image et procede de commande |
TW594617B (en) | 2002-03-13 | 2004-06-21 | Sanyo Electric Co | Organic EL display panel and method for making the same |
AU2003252812A1 (en) | 2002-03-13 | 2003-09-22 | Koninklijke Philips Electronics N.V. | Two sided display device |
GB2386462A (en) | 2002-03-14 | 2003-09-17 | Cambridge Display Tech Ltd | Display driver circuits |
US6891227B2 (en) | 2002-03-20 | 2005-05-10 | International Business Machines Corporation | Self-aligned nanotube field effect transistor and method of fabricating same |
US6806497B2 (en) | 2002-03-29 | 2004-10-19 | Seiko Epson Corporation | Electronic device, method for driving the electronic device, electro-optical device, and electronic equipment |
JP4266682B2 (ja) | 2002-03-29 | 2009-05-20 | セイコーエプソン株式会社 | 電子装置、電子装置の駆動方法、電気光学装置及び電子機器 |
KR100488835B1 (ko) | 2002-04-04 | 2005-05-11 | 산요덴키가부시키가이샤 | 반도체 장치 및 표시 장치 |
US6911781B2 (en) | 2002-04-23 | 2005-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and production system of the same |
JP3637911B2 (ja) * | 2002-04-24 | 2005-04-13 | セイコーエプソン株式会社 | 電子装置、電子機器、および電子装置の駆動方法 |
DE10221301B4 (de) | 2002-05-14 | 2004-07-29 | Junghans Uhren Gmbh | Vorrichtung mit Solarzellenanordnung und Flüssigkristallanzeige |
US7474285B2 (en) | 2002-05-17 | 2009-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Display apparatus and driving method thereof |
JP3972359B2 (ja) * | 2002-06-07 | 2007-09-05 | カシオ計算機株式会社 | 表示装置 |
JP2004070293A (ja) | 2002-06-12 | 2004-03-04 | Seiko Epson Corp | 電子装置、電子装置の駆動方法及び電子機器 |
US20030230980A1 (en) * | 2002-06-18 | 2003-12-18 | Forrest Stephen R | Very low voltage, high efficiency phosphorescent oled in a p-i-n structure |
GB2389951A (en) | 2002-06-18 | 2003-12-24 | Cambridge Display Tech Ltd | Display driver circuits for active matrix OLED displays |
US7220997B2 (en) | 2002-06-21 | 2007-05-22 | Josuke Nakata | Light receiving or light emitting device and itsd production method |
JP3970110B2 (ja) | 2002-06-27 | 2007-09-05 | カシオ計算機株式会社 | 電流駆動装置及びその駆動方法並びに電流駆動装置を用いた表示装置 |
JP2004045488A (ja) | 2002-07-09 | 2004-02-12 | Casio Comput Co Ltd | 表示駆動装置及びその駆動制御方法 |
JP4115763B2 (ja) | 2002-07-10 | 2008-07-09 | パイオニア株式会社 | 表示装置及び表示方法 |
US20040150594A1 (en) | 2002-07-25 | 2004-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and drive method therefor |
TW569173B (en) | 2002-08-05 | 2004-01-01 | Etoms Electronics Corp | Driver for controlling display cycle of OLED and its method |
GB0219771D0 (en) | 2002-08-24 | 2002-10-02 | Koninkl Philips Electronics Nv | Manufacture of electronic devices comprising thin-film circuit elements |
TW558699B (en) | 2002-08-28 | 2003-10-21 | Au Optronics Corp | Driving circuit and method for light emitting device |
JP4194451B2 (ja) | 2002-09-02 | 2008-12-10 | キヤノン株式会社 | 駆動回路及び表示装置及び情報表示装置 |
US7385572B2 (en) | 2002-09-09 | 2008-06-10 | E.I Du Pont De Nemours And Company | Organic electronic device having improved homogeneity |
TW588468B (en) | 2002-09-19 | 2004-05-21 | Ind Tech Res Inst | Pixel structure of active matrix organic light-emitting diode |
JP4230746B2 (ja) | 2002-09-30 | 2009-02-25 | パイオニア株式会社 | 表示装置及び表示パネルの駆動方法 |
GB0223304D0 (en) | 2002-10-08 | 2002-11-13 | Koninkl Philips Electronics Nv | Electroluminescent display devices |
JP3832415B2 (ja) | 2002-10-11 | 2006-10-11 | ソニー株式会社 | アクティブマトリクス型表示装置 |
KR100460210B1 (ko) | 2002-10-29 | 2004-12-04 | 엘지.필립스 엘시디 주식회사 | 듀얼패널타입 유기전계발광 소자 및 그의 제조방법 |
KR100476368B1 (ko) | 2002-11-05 | 2005-03-17 | 엘지.필립스 엘시디 주식회사 | 유기 전계발광 표시패널의 데이터 구동 장치 및 방법 |
JP2004157467A (ja) | 2002-11-08 | 2004-06-03 | Tohoku Pioneer Corp | アクティブ型発光表示パネルの駆動方法および駆動装置 |
US6687266B1 (en) | 2002-11-08 | 2004-02-03 | Universal Display Corporation | Organic light emitting materials and devices |
JP3707484B2 (ja) | 2002-11-27 | 2005-10-19 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の駆動方法および電子機器 |
JP3873149B2 (ja) | 2002-12-11 | 2007-01-24 | 株式会社日立製作所 | 表示装置 |
JP2004191752A (ja) | 2002-12-12 | 2004-07-08 | Seiko Epson Corp | 電気光学装置、電気光学装置の駆動方法および電子機器 |
TWI228941B (en) | 2002-12-27 | 2005-03-01 | Au Optronics Corp | Active matrix organic light emitting diode display and fabricating method thereof |
JP4865986B2 (ja) | 2003-01-10 | 2012-02-01 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 有機el表示装置 |
US7079091B2 (en) | 2003-01-14 | 2006-07-18 | Eastman Kodak Company | Compensating for aging in OLED devices |
JP2004246320A (ja) | 2003-01-20 | 2004-09-02 | Sanyo Electric Co Ltd | アクティブマトリクス駆動型表示装置 |
KR100490622B1 (ko) | 2003-01-21 | 2005-05-17 | 삼성에스디아이 주식회사 | 유기 전계발광 표시장치 및 그 구동방법과 픽셀회로 |
US7161566B2 (en) | 2003-01-31 | 2007-01-09 | Eastman Kodak Company | OLED display with aging compensation |
JP4048969B2 (ja) | 2003-02-12 | 2008-02-20 | セイコーエプソン株式会社 | 電気光学装置の駆動方法及び電子機器 |
JP4378087B2 (ja) | 2003-02-19 | 2009-12-02 | 奇美電子股▲ふん▼有限公司 | 画像表示装置 |
CA2419704A1 (en) | 2003-02-24 | 2004-08-24 | Ignis Innovation Inc. | Method of manufacturing a pixel with organic light-emitting diode |
US7612749B2 (en) | 2003-03-04 | 2009-11-03 | Chi Mei Optoelectronics Corporation | Driving circuits for displays |
JP3925435B2 (ja) | 2003-03-05 | 2007-06-06 | カシオ計算機株式会社 | 発光駆動回路及び表示装置並びにその駆動制御方法 |
TWI224300B (en) | 2003-03-07 | 2004-11-21 | Au Optronics Corp | Data driver and related method used in a display device for saving space |
TWI228696B (en) | 2003-03-21 | 2005-03-01 | Ind Tech Res Inst | Pixel circuit for active matrix OLED and driving method |
KR100502912B1 (ko) * | 2003-04-01 | 2005-07-21 | 삼성에스디아이 주식회사 | 발광 표시 장치 및 그 표시 패널과 구동 방법 |
US7026597B2 (en) | 2003-04-09 | 2006-04-11 | Eastman Kodak Company | OLED display with integrated elongated photosensor |
JP3991003B2 (ja) | 2003-04-09 | 2007-10-17 | 松下電器産業株式会社 | 表示装置およびソース駆動回路 |
JP4530622B2 (ja) | 2003-04-10 | 2010-08-25 | Okiセミコンダクタ株式会社 | 表示パネルの駆動装置 |
US20060227085A1 (en) | 2003-04-25 | 2006-10-12 | Boldt Norton K Jr | Led illumination source/display with individual led brightness monitoring capability and calibration method |
US6771028B1 (en) | 2003-04-30 | 2004-08-03 | Eastman Kodak Company | Drive circuitry for four-color organic light-emitting device |
JPWO2004100118A1 (ja) | 2003-05-07 | 2006-07-13 | 東芝松下ディスプレイテクノロジー株式会社 | El表示装置およびその駆動方法 |
JP4484451B2 (ja) | 2003-05-16 | 2010-06-16 | 奇美電子股▲ふん▼有限公司 | 画像表示装置 |
JP3772889B2 (ja) * | 2003-05-19 | 2006-05-10 | セイコーエプソン株式会社 | 電気光学装置およびその駆動装置 |
JP4049018B2 (ja) * | 2003-05-19 | 2008-02-20 | ソニー株式会社 | 画素回路、表示装置、および画素回路の駆動方法 |
EP1814100A3 (en) | 2003-05-23 | 2008-03-05 | Barco, naamloze vennootschap. | Method for displaying images on a large-screen organic light-emitting diode display, and display used therefore |
US20040257352A1 (en) | 2003-06-18 | 2004-12-23 | Nuelight Corporation | Method and apparatus for controlling |
US7262753B2 (en) | 2003-08-07 | 2007-08-28 | Barco N.V. | Method and system for measuring and controlling an OLED display element for improved lifetime and light output |
JP2005057217A (ja) | 2003-08-07 | 2005-03-03 | Renesas Technology Corp | 半導体集積回路装置 |
JP4342870B2 (ja) | 2003-08-11 | 2009-10-14 | 株式会社 日立ディスプレイズ | 有機el表示装置 |
JP2005099715A (ja) | 2003-08-29 | 2005-04-14 | Seiko Epson Corp | 電子回路の駆動方法、電子回路、電子装置、電気光学装置、電子機器および電子装置の駆動方法 |
GB0320503D0 (en) | 2003-09-02 | 2003-10-01 | Koninkl Philips Electronics Nv | Active maxtrix display devices |
US8537081B2 (en) | 2003-09-17 | 2013-09-17 | Hitachi Displays, Ltd. | Display apparatus and display control method |
CA2443206A1 (en) | 2003-09-23 | 2005-03-23 | Ignis Innovation Inc. | Amoled display backplanes - pixel driver circuits, array architecture, and external compensation |
US7038392B2 (en) | 2003-09-26 | 2006-05-02 | International Business Machines Corporation | Active-matrix light emitting display and method for obtaining threshold voltage compensation for same |
US7310077B2 (en) | 2003-09-29 | 2007-12-18 | Michael Gillis Kane | Pixel circuit for an active matrix organic light-emitting diode display |
JP4895490B2 (ja) | 2003-09-30 | 2012-03-14 | 三洋電機株式会社 | 有機elパネル |
US7075316B2 (en) | 2003-10-02 | 2006-07-11 | Alps Electric Co., Ltd. | Capacitance detector circuit, capacitance detection method, and fingerprint sensor using the same |
TWI254898B (en) | 2003-10-02 | 2006-05-11 | Pioneer Corp | Display apparatus with active matrix display panel and method for driving same |
JP4589614B2 (ja) | 2003-10-28 | 2010-12-01 | 株式会社 日立ディスプレイズ | 画像表示装置 |
US6937215B2 (en) | 2003-11-03 | 2005-08-30 | Wintek Corporation | Pixel driving circuit of an organic light emitting diode display panel |
US6995519B2 (en) | 2003-11-25 | 2006-02-07 | Eastman Kodak Company | OLED display with aging compensation |
US7224332B2 (en) | 2003-11-25 | 2007-05-29 | Eastman Kodak Company | Method of aging compensation in an OLED display |
US7339636B2 (en) | 2003-12-02 | 2008-03-04 | Motorola, Inc. | Color display and solar cell device |
US20060264143A1 (en) | 2003-12-08 | 2006-11-23 | Ritdisplay Corporation | Fabricating method of an organic electroluminescent device having solar cells |
US7514762B2 (en) | 2003-12-15 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Active matrix pixel device with photo sensor |
KR100580554B1 (ko) | 2003-12-30 | 2006-05-16 | 엘지.필립스 엘시디 주식회사 | 일렉트로-루미네센스 표시장치 및 그 구동방법 |
JP4263153B2 (ja) | 2004-01-30 | 2009-05-13 | Necエレクトロニクス株式会社 | 表示装置、表示装置の駆動回路およびその駆動回路用半導体デバイス |
US7502000B2 (en) | 2004-02-12 | 2009-03-10 | Canon Kabushiki Kaisha | Drive circuit and image forming apparatus using the same |
US7173590B2 (en) | 2004-06-02 | 2007-02-06 | Sony Corporation | Pixel circuit, active matrix apparatus and display apparatus |
KR20050115346A (ko) | 2004-06-02 | 2005-12-07 | 삼성전자주식회사 | 표시 장치 및 그 구동 방법 |
JP2005345992A (ja) | 2004-06-07 | 2005-12-15 | Chi Mei Electronics Corp | 表示装置 |
US20060044227A1 (en) | 2004-06-18 | 2006-03-02 | Eastman Kodak Company | Selecting adjustment for OLED drive voltage |
CA2472671A1 (en) | 2004-06-29 | 2005-12-29 | Ignis Innovation Inc. | Voltage-programming scheme for current-driven amoled displays |
CA2567076C (en) | 2004-06-29 | 2008-10-21 | Ignis Innovation Inc. | Voltage-programming scheme for current-driven amoled displays |
US20060007249A1 (en) | 2004-06-29 | 2006-01-12 | Damoder Reddy | Method for operating and individually controlling the luminance of each pixel in an emissive active-matrix display device |
KR100578813B1 (ko) | 2004-06-29 | 2006-05-11 | 삼성에스디아이 주식회사 | 발광 표시 장치 및 그 구동 방법 |
US7317433B2 (en) | 2004-07-16 | 2008-01-08 | E.I. Du Pont De Nemours And Company | Circuit for driving an electronic component and method of operating an electronic device having the circuit |
US7868856B2 (en) | 2004-08-20 | 2011-01-11 | Koninklijke Philips Electronics N.V. | Data signal driver for light emitting display |
JP4622389B2 (ja) | 2004-08-30 | 2011-02-02 | ソニー株式会社 | 表示装置及びその駆動方法 |
US7589707B2 (en) * | 2004-09-24 | 2009-09-15 | Chen-Jean Chou | Active matrix light emitting device display pixel circuit and drive method |
JP4111185B2 (ja) | 2004-10-19 | 2008-07-02 | セイコーエプソン株式会社 | 電気光学装置、その駆動方法及び電子機器 |
EP1825455A4 (en) * | 2004-11-16 | 2009-05-06 | Ignis Innovation Inc | SYSTEM AND METHOD FOR SCREEN CONTROL WITH ACTIVE MATRIX ELECTROLUMINESCENT DEVICES |
JP4865999B2 (ja) | 2004-11-19 | 2012-02-01 | 株式会社日立製作所 | 電界効果トランジスタの作製方法 |
US7116058B2 (en) | 2004-11-30 | 2006-10-03 | Wintek Corporation | Method of improving the stability of active matrix OLED displays driven by amorphous silicon thin-film transistors |
EP2688058A3 (en) | 2004-12-15 | 2014-12-10 | Ignis Innovation Inc. | Method and system for programming, calibrating and driving a light emitting device display |
CA2590366C (en) | 2004-12-15 | 2008-09-09 | Ignis Innovation Inc. | Method and system for programming, calibrating and driving a light emitting device display |
CA2504571A1 (en) | 2005-04-12 | 2006-10-12 | Ignis Innovation Inc. | A fast method for compensation of non-uniformities in oled displays |
CA2495726A1 (en) | 2005-01-28 | 2006-07-28 | Ignis Innovation Inc. | Locally referenced voltage programmed pixel for amoled displays |
US7088051B1 (en) | 2005-04-08 | 2006-08-08 | Eastman Kodak Company | OLED display with control |
FR2884639A1 (fr) | 2005-04-14 | 2006-10-20 | Thomson Licensing Sa | Panneau d'affichage d'images a matrice active, dont les emetteurs sont alimentes par des generateurs de courant pilotables en tension |
JP2006302556A (ja) | 2005-04-18 | 2006-11-02 | Seiko Epson Corp | 半導体素子の製造方法、半導体素子、電子デバイスおよび電子機器 |
US20070008297A1 (en) | 2005-04-20 | 2007-01-11 | Bassetti Chester F | Method and apparatus for image based power control of drive circuitry of a display pixel |
TWI302281B (en) | 2005-05-23 | 2008-10-21 | Au Optronics Corp | Display unit, display array, display panel and display unit control method |
JP4996065B2 (ja) | 2005-06-15 | 2012-08-08 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 有機el表示装置の製造方法および有機el表示装置 |
KR101157979B1 (ko) | 2005-06-20 | 2012-06-25 | 엘지디스플레이 주식회사 | 유기발광다이오드 구동회로와 이를 이용한유기발광다이오드 표시장치 |
US20100079711A1 (en) | 2005-06-23 | 2010-04-01 | TPO Hong Holding Limited | Liquid crystal display device equipped with a photovoltaic conversion function |
US7649513B2 (en) | 2005-06-25 | 2010-01-19 | Lg Display Co., Ltd | Organic light emitting diode display |
GB0513384D0 (en) | 2005-06-30 | 2005-08-03 | Dry Ice Ltd | Cooling receptacle |
KR101169053B1 (ko) | 2005-06-30 | 2012-07-26 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 |
TWI281360B (en) | 2005-08-31 | 2007-05-11 | Univision Technology Inc | Full color organic electroluminescent display device and method for fabricating the same |
WO2007032361A1 (en) | 2005-09-15 | 2007-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
US20080055209A1 (en) | 2006-08-30 | 2008-03-06 | Eastman Kodak Company | Method and apparatus for uniformity and brightness correction in an amoled display |
WO2007060742A1 (ja) | 2005-11-28 | 2007-05-31 | Mitsubishi Denki Kabushiki Kaisha | 印刷マスク並びに太陽電池セル、フラットパネルディスプレイおよびチップコンデンサ |
WO2007079572A1 (en) | 2006-01-09 | 2007-07-19 | Ignis Innovation Inc. | Method and system for driving an active matrix display circuit |
DE202006005427U1 (de) | 2006-04-04 | 2006-06-08 | Emde, Thomas | Beleuchtungsvorrichtung |
JP5037858B2 (ja) | 2006-05-16 | 2012-10-03 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 表示装置 |
JP2007317384A (ja) | 2006-05-23 | 2007-12-06 | Canon Inc | 有機el表示装置、その製造方法、リペア方法及びリペア装置 |
KR101245218B1 (ko) | 2006-06-22 | 2013-03-19 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시소자 |
JP2008046377A (ja) | 2006-08-17 | 2008-02-28 | Sony Corp | 表示装置 |
JP4222426B2 (ja) | 2006-09-26 | 2009-02-12 | カシオ計算機株式会社 | 表示駆動装置及びその駆動方法、並びに、表示装置及びその駆動方法 |
US8094129B2 (en) | 2006-11-27 | 2012-01-10 | Microsoft Corporation | Touch sensing using shadow and reflective modes |
US7355574B1 (en) | 2007-01-24 | 2008-04-08 | Eastman Kodak Company | OLED display with aging and efficiency compensation |
CN101636856A (zh) | 2007-03-22 | 2010-01-27 | 日本先锋公司 | 有机电致发光器件、内含有机电致发光器件的显示装置和发电装置 |
JP2010532095A (ja) | 2007-06-28 | 2010-09-30 | スリーエム イノベイティブ プロパティズ カンパニー | 界面導電性クラスターを組み入れた薄膜トランジスタ |
US7859188B2 (en) | 2007-08-21 | 2010-12-28 | Global Oled Technology Llc | LED device having improved contrast |
JP5115180B2 (ja) | 2007-12-21 | 2013-01-09 | ソニー株式会社 | 自発光型表示装置およびその駆動方法 |
US8405585B2 (en) | 2008-01-04 | 2013-03-26 | Chimei Innolux Corporation | OLED display, information device, and method for displaying an image in OLED display |
EP2255355A1 (en) | 2008-02-11 | 2010-12-01 | QUALCOMM MEMS Technologies, Inc. | Method and apparatus for sensing, measurement or characterization of display elements integrated with the display drive scheme, and system and applications using the same |
KR100939211B1 (ko) | 2008-02-22 | 2010-01-28 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치와 그 구동방법 |
JP2009282158A (ja) | 2008-05-20 | 2009-12-03 | Samsung Electronics Co Ltd | 表示装置 |
JP2010044118A (ja) | 2008-08-08 | 2010-02-25 | Sony Corp | 表示装置およびその製造方法 |
JP5117326B2 (ja) | 2008-08-29 | 2013-01-16 | 富士フイルム株式会社 | カラー表示装置及びその製造方法 |
EP2159783A1 (en) | 2008-09-01 | 2010-03-03 | Barco N.V. | Method and system for compensating ageing effects in light emitting diode display devices |
US8368654B2 (en) | 2008-09-30 | 2013-02-05 | Apple Inc. | Integrated touch sensor and solar assembly |
KR20100043437A (ko) | 2008-10-20 | 2010-04-29 | 삼성전자주식회사 | 터치 스크린을 구비한 컴퓨팅 기기의 입력 판단 장치 및 방법 |
KR101582937B1 (ko) | 2008-12-02 | 2016-01-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101542398B1 (ko) | 2008-12-19 | 2015-08-13 | 삼성디스플레이 주식회사 | 유기 발광 장치 및 그 제조 방법 |
US20100237374A1 (en) | 2009-03-20 | 2010-09-23 | Electronics And Telecommunications Research Institute | Transparent Organic Light Emitting Diode Lighting Device |
KR101320655B1 (ko) | 2009-08-05 | 2013-10-23 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 |
KR101100947B1 (ko) | 2009-10-09 | 2011-12-29 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시장치 및 그의 구동방법 |
KR101182442B1 (ko) | 2010-01-27 | 2012-09-12 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 그의 제조 방법 |
KR101860934B1 (ko) | 2011-07-08 | 2018-05-25 | 삼성디스플레이 주식회사 | 표시 장치 및 그 구동 방법 |
US8901579B2 (en) | 2011-08-03 | 2014-12-02 | Ignis Innovation Inc. | Organic light emitting diode and method of manufacturing |
US9013472B2 (en) | 2011-11-08 | 2015-04-21 | Innolux Corporation | Stereophonic display devices |
-
2005
- 2005-01-28 CA CA002495726A patent/CA2495726A1/en not_active Abandoned
-
2006
- 2006-01-26 TW TW095103204A patent/TW200639791A/zh unknown
- 2006-01-26 JP JP2007552474A patent/JP2008529071A/ja active Pending
- 2006-01-26 KR KR1020077019592A patent/KR20070102577A/ko not_active Application Discontinuation
- 2006-01-26 CN CN200910246264.4A patent/CN101826298B/zh active Active
- 2006-01-26 EP EP06705080.7A patent/EP1846909B1/en active Active
- 2006-01-26 WO PCT/CA2006/000096 patent/WO2006079203A1/en active Application Filing
- 2006-01-26 CN CN200680009980A patent/CN100583203C/zh active Active
- 2006-01-27 US US11/341,332 patent/US8044893B2/en active Active
-
2011
- 2011-08-17 US US13/211,732 patent/US8497825B2/en active Active
-
2013
- 2013-07-03 US US13/934,652 patent/US8659518B2/en active Active
-
2014
- 2014-01-17 US US14/157,699 patent/US9373645B2/en active Active
-
2016
- 2016-05-23 US US15/161,525 patent/US9728135B2/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107808629A (zh) * | 2016-09-08 | 2018-03-16 | 丰宜香港有限公司 | 像素电路 |
CN107808629B (zh) * | 2016-09-08 | 2019-01-15 | 子悦光电(深圳)有限公司 | 像素电路 |
CN114882842A (zh) * | 2022-05-05 | 2022-08-09 | 云谷(固安)科技有限公司 | 显示驱动方法、装置、设备及存储介质 |
CN114882842B (zh) * | 2022-05-05 | 2024-01-19 | 云谷(固安)科技有限公司 | 显示驱动方法、装置、设备及存储介质 |
Also Published As
Publication number | Publication date |
---|---|
CN100583203C (zh) | 2010-01-20 |
EP1846909A4 (en) | 2009-12-02 |
US20140132581A1 (en) | 2014-05-15 |
TW200639791A (en) | 2006-11-16 |
EP1846909A1 (en) | 2007-10-24 |
US20130293522A1 (en) | 2013-11-07 |
CA2495726A1 (en) | 2006-07-28 |
WO2006079203A1 (en) | 2006-08-03 |
CN101826298A (zh) | 2010-09-08 |
US20120001888A1 (en) | 2012-01-05 |
US8497825B2 (en) | 2013-07-30 |
US9373645B2 (en) | 2016-06-21 |
US8044893B2 (en) | 2011-10-25 |
US20060187153A1 (en) | 2006-08-24 |
KR20070102577A (ko) | 2007-10-18 |
CN101826298B (zh) | 2014-12-31 |
JP2008529071A (ja) | 2008-07-31 |
US9728135B2 (en) | 2017-08-08 |
EP1846909B1 (en) | 2018-11-21 |
US20160267846A1 (en) | 2016-09-15 |
US8659518B2 (en) | 2014-02-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9728135B2 (en) | Voltage programmed pixel circuit, display system and driving method thereof | |
US9741292B2 (en) | Method and system for programming and driving active matrix light emitting device pixel having a controllable supply voltage | |
US10019941B2 (en) | Compensation technique for luminance degradation in electro-luminance devices | |
JP2008521033A (ja) | アクティブマトリクス型発光デバイス表示器のためのシステム及び駆動方法 | |
JP2011520139A (ja) | 発光デバイス・ディスプレイのためのシステムおよび駆動方法 | |
CN101111880B (zh) | 用于主动矩阵发光器件显示器的系统和驱动方法 | |
CA2531719C (en) | A voltage programmed pixel circuit, display system and driving method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |