CN100559284C - A kind of method for automatic measurement of heterogeneous light of photo-etching machine - Google Patents
A kind of method for automatic measurement of heterogeneous light of photo-etching machine Download PDFInfo
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- CN100559284C CN100559284C CNB2008100328434A CN200810032843A CN100559284C CN 100559284 C CN100559284 C CN 100559284C CN B2008100328434 A CNB2008100328434 A CN B2008100328434A CN 200810032843 A CN200810032843 A CN 200810032843A CN 100559284 C CN100559284 C CN 100559284C
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Abstract
A kind of method for automatic measurement of heterogeneous light of photo-etching machine comprises the steps: that a plurality of mirror image focal planes are detected alignment mark to expose to silicon chip; The described mark that part has been exposed is introduced the parasitic light of setting dosage; Described mark to other is introduced the parasitic light for the treatment of dose; Silicon chip utilizes alignment system to read the aligned position of described mark after developing; Demarcate the corresponding relation of parasitic light and aligned position; Calculate the parasitic light of litho machine to be measured system.The present invention not only can shorten the test duration to parasitic light, and reduces test error.
Description
Technical field
The present invention relates to litho machine and make the field, relate in particular to a kind of method for automatic measurement of heterogeneous light of photo-etching machine.
Background technology
Litho machine is one of key equipment in integrated circuit production and the manufacture process, and the litho machine photoetching resolution is the key index of decision litho machine performance.As everyone knows, the scattered light in the optical system is the contrast that parasitic light will influence its imaging, thereby reduces the resolution of optical system.Along with reducing of lithographic feature size, the parasitic light in the litho machine optical system is more and more outstanding to the influence of photoetching quality, and the periodic in situ detection of parasitic light has become indispensable function in the advanced projection mask aligner.
People such as J.Kirk have proposed a kind of detection technique of projection lens of lithography machine parasitic light in 1999, its principle of work is exposed to special mask images for according to a fixed step size a series of exposure doses being set, thereby obtain exposure dose that non-photic zone on the silicon chip and photic zone photoresist are disposed just, both ratio is the parasitic light ratio of being asked, but this kind method measuring accuracy is limited, and required Measuring Time is longer.
Inventor Yao has proposed the method for determining litho machine optical system parasitic light by line thickness in the special graph of analyzing exposure and position, but this kind method needs multiexposure, multiple exposure equally and repeatedly measure and analyze, testing complex, and required time is longer.Two kinds of methods all need tester's intervention in test process, increased source of error, and are unfavorable for the robotization tested.
Summary of the invention
The present invention causes the test duration long for the test that solves heterogeneous light of photo-etching machine in the prior art needs tester's intervention, and the shortcoming that precision is not high provides a kind of method for automatic measurement of heterogeneous light of photo-etching machine.
A kind of automatic measurement system of heterogeneous light of photo-etching machine comprises, light source is used to produce projected light beam; Illuminator is used to adjust light distribution and the partial coherence factor that described light source sends light beam; Mask is positioned on the mask platform, is used for selecting the back to select a part to appear the light that described illuminator penetrates; Imaging optical system, the light exposure image that is used for described mask is appeared is at silicon chip; Alignment system, the position that is used to obtain alignment mark; Work stage is used to carry described silicon chip; Laser interferometer, the accurate location that is used to realize work stage.
A kind of method for automatic measurement of heterogeneous light of photo-etching machine comprises,
After step 4, the development, utilize the aligned position of all described alignment marks of off-axis alignment systematic survey;
In the wherein said step 1, its image space center of gravity of specific alignment mark changes with the size of parasitic light; Described specific alignment system is that the mirror image focal plane detects alignment system.
In the wherein said step 6, the position of focus mark can be asked average back utilizing corresponding relation to try to achieve parasitic light; After also can utilizing corresponding relation to try to achieve parasitic light earlier, average again.
The present invention is owing to adopt the litho machine alignment system to obtain the aligned position of special alignment mark under different parasitic lights are provided with, set up the relation between aligned position and parasitic light, thereby finally obtain litho machine optical system parasitic light, not only can realize the automatic test of parasitic light, reduce the test duration, increased measuring accuracy.
Description of drawings
Fig. 1 is a parasitic light measurement mechanism provided by the present invention;
Fig. 2 is among the embodiment, and the mirror image focal plane of use detects the alignment mark synoptic diagram;
Fig. 3 is among the embodiment, and the mirror image focal plane of exposure detects the distribution plan of alignment mark in silicon chip;
Fig. 4 is among the embodiment, the mirror image focal plane is detected alignment mark introduce the mask graph of determining the dosage parasitic light, and white is the light transmission part;
Fig. 5 is among the embodiment, the mirror image focal plane is detected alignment mark introduce the mask graph for the treatment of the examining system parasitic light, and black is the part that is in the light;
Fig. 6 is among the embodiment, and the mirror image focal plane detects alignment mark imaging line thickness to the influence of off-axis alignment system to its aligned position;
Fig. 7 is among the embodiment, and parasitic light detects the influence of alignment mark imaging line thickness to the mirror image focal plane;
Fig. 8 is among the embodiment, and parasitic light and mirror image focal plane detect the corresponding relation of alignment mark position.
Embodiment
The device that a kind of heterogeneous light of photo-etching machine method for automatic measurement of the present invention is adopted comprises that as shown in Figure 1 light source 1 (LS) is used to produce projected light beam; Illuminator 2 (IL) is used to adjust light distribution and the partial coherence factor that described light source 1 sends light beam; Mask 4 (R) is positioned on the mask platform 5 (RS), is used for selecting the back to select a part to appear the light that described illuminator 2 penetrates; Imaging optical system 3 (PL), the light exposure image that is used for described mask 4 is appeared is at silicon chip 8 (W); Alignment system 6 (AL), the position that is used to obtain alignment mark; Work stage 9 (WS) is used to carry described silicon chip 8; 7 (IF) laser interferometer, the accurate location that is used to realize work stage 9.
The concrete steps that the present invention measures heterogeneous light of photo-etching machine are as follows, comprise,
1, the deep ultraviolet laser that sends of light source shines through illuminator and is carved with as shown in Figure 2 that the mirror image focal plane detects alignment mark (FOCAL, Focus Calibration by means of Alignment) on the mask, after part light sees through mask, through imaging optical system, at 25mj/cm
2Exposure image is on the different piece of silicon chip, as shown in Figure 3 under the dosage;
2, will be as shown in Figure 4 mask graph, the mirror image focal plane that exposed in Fig. 3 of exposing respectively detects the 1-15 place, position of alignment mark, from the position 1 to the position 15 exposure doses from 0.05mj/cm
2Be incremented to 0.2mj/cm
2(exposure dose step-length 0.01mj/cm
2);
3, will be as shown in Figure 5 expose the respectively mirror image focal plane that exposed in Fig. 3 of mask graph detect the 16-20 place, position of alignment mark, exposure dose is 25mj/cm
2
4, utilize the off-axis alignment system to read the mirror image focal plane after the development and detect alignment mark position p1-p20;
5, utilize p1-p15 and corresponding exposure dose 0.05-0.2mj/cm
2Set up the corresponding relation of parasitic light and aligned position, as shown in Figure 8;
6, p16-p20 is averaged after, utilize resulting corresponding relation in the step 5 to try to achieve corresponding system's parasitic light, also can try to achieve the pairing parasitic light of P16～P20 respectively, average then.
The mirror image focal plane detects a kind of mark that alignment mark is ASML (Chinese mugwort department mole) board, its image quality to the off-axis alignment system as shown in Figure 6 to the influence of its aligned position, mark fine structure imaging line thickness is more little, then the skew of its aligned position is just big more; The existence of parasitic light can influence the width of described alignment mark fine structure imaging lines, and as shown in Figure 7, parasitic light is big more, and described alignment mark fine structure imaging line thickness is more little; So parasitic light is to the influence of described alignment mark position, as shown in Figure 8, parasitic light is big more, and the markers align offset is big more.
The present invention utilizes the photo-etching machine off-axis alignment system to obtain the aligned position of focus mark under different parasitic lights are provided with, and sets up the relation between aligned position and parasitic light, thereby finally obtains litho machine optical system parasitic light.This method has realized the automatic test of heterogeneous light of photo-etching machine, has reduced the test duration, has increased measuring accuracy.
Claims (2)
1, the automatic method of measuring of a kind of heterogeneous light of photo-etching machine is characterized in that, comprise,
Step 1, the image space center of gravity is exposed to the silicon chip diverse location with the alignment mark that the size of parasitic light changes, form n exposure field;
Step 2, for the described alignment mark in the formed n exposure field, choose m, it is exposed with parasitic light of setting dosage;
Step 3, n-m described alignment mark to being left expose with parasitic light to be measured to it;
After step 4, the development, utilize the aligned position of all described alignment marks of off-axis alignment systematic survey;
Step 5, utilize in the step 2 measurement result of exposure mark, set up the corresponding relation of parasitic light and described alignment mark position;
Step 6, according to the measurement result of exposure mark in the step 3, and the corresponding relation that obtains in the step 5 is tried to achieve system's parasitic light.
2, a kind of heterogeneous light of photo-etching machine method for automatic measurement shown in claim 1 is characterized in that, in the described step 6, the position of focus mark can be asked average back utilizing corresponding relation to try to achieve parasitic light; After also can utilizing corresponding relation to try to achieve parasitic light earlier, average again.
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| CNB2008100328434A CN100559284C (en) | 2008-01-21 | 2008-01-21 | A kind of method for automatic measurement of heterogeneous light of photo-etching machine |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101510058B (en) * | 2009-03-13 | 2011-10-12 | 上海微电子装备有限公司 | Method for measuring and correcting level error of work head position |
| CN103135368A (en) * | 2013-03-14 | 2013-06-05 | 中国科学院光电技术研究所 | Method and system for measuring stray light |
| CN105319858B (en) * | 2014-07-29 | 2018-03-02 | 上海微电子装备（集团）股份有限公司 | Illumination testing device and illumination uniformity, the method for testing of veiling glare |
| CN106814557B (en) * | 2015-11-30 | 2019-04-30 | 上海微电子装备（集团）股份有限公司 | A kind of pair of Barebone and alignment methods |
| CN106773555B (en) * | 2017-03-21 | 2019-03-26 | 上海华力微电子有限公司 | The method that compensation causes exposure error by projective lens scattering light guide |
| CN113701676B (en) * | 2021-08-02 | 2022-11-25 | 清华大学 | Stray light measuring device and method |
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| CN1641485A (en) * | 2004-01-16 | 2005-07-20 | 株式会社东芝 | Exposure system, test mask for flare testing, method for evaluating lithography process |
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| US4697075A (en) * | 1986-04-11 | 1987-09-29 | General Electric Company | X-ray imaging system calibration using projection means |
| CN1497355A (en) * | 2002-10-18 | 2004-05-19 | Asml荷兰有限公司 | Method for determining stray radiation, photoetching projection equipment |
| CN1641485A (en) * | 2004-01-16 | 2005-07-20 | 株式会社东芝 | Exposure system, test mask for flare testing, method for evaluating lithography process |
| CN1570585A (en) * | 2004-04-29 | 2005-01-26 | 上海微电子装备有限公司 | Field measurement method for aberration of imaging optical system |
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Address after: 201203 Zhangjiang High Tech Park, Shanghai, Zhang Dong Road, No. 1525 Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Zhangjiang High Tech Park, Shanghai, Zhang Dong Road, No. 1525 Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |