CN100462831C - Stacked array semiconductor laser alignment micro array element - Google Patents

Stacked array semiconductor laser alignment micro array element Download PDF

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Publication number
CN100462831C
CN100462831C CNB2005100114925A CN200510011492A CN100462831C CN 100462831 C CN100462831 C CN 100462831C CN B2005100114925 A CNB2005100114925 A CN B2005100114925A CN 200510011492 A CN200510011492 A CN 200510011492A CN 100462831 C CN100462831 C CN 100462831C
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lens
error
array
interval
semiconductor laser
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CN1664687A (en
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邓启凌
杜春雷
周崇喜
董小春
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Institute of Optics and Electronics of CAS
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Institute of Optics and Electronics of CAS
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Abstract

The invention relates to a semi-conductor laser device for collimating micro-array elements, characterized in that when exists interval error, it can measure real interval error of each strip of lens one by one, design and make micro lens array with its center interval corresponding to the said interval error to make the center interval of micro lens equal to that of the laser device; when exists defocus error, it can measure defocus errors of each laser device with one based on, compute real operating focal length and relief depth; when exists both interval error and defocus error, it can simultaneously measure the real interval error and defocus error of each strip of lens, design and make micro lens array with its center interval corresponding to the said interval error to make the interval error of micro lens array equal to center interval of laser device and measure the real interval error and defocus error of each strip of lens.

Description

A kind of stacked array semiconductor laser alignment micro array element method for designing
Technical field
The present invention relates to a kind of novel surface array semiconductor laser collimation with little array element design method, belong to the micro-optic technical field.
Background technology
In fields such as materials processing, laser pump (ing)s, along with demand high-power, high brightness constantly increases, surface array semiconductor laser obtains application more and more widely.Generally stack is formed in 5 to 20 single laser device coupling encapsulation, can reach the output of several hectowatts and even last kilowatt power.But present packaging technology can be brought some errors to surface array semiconductor laser inevitably, as defocus error (optical axis direction, the luminous zone of each bar bar is not in same plane), interval error is (in the plane perpendicular to optical axis, each bar bar cycle is not waited), oblique bending error (on plane, not parallel between the bar bar) etc. perpendicular to optical axis.Simultaneously because the angle of divergence that semiconductor laser is fast, slow-axis direction exists 40 °～50 ° and 10 °～20 ° respectively, and there is serious astigmatism, brings great inconvenience for actual the use.Can adopt the post lens that it is collimated: light-emitting area is placed the focus place of post lens, and light is parallel outgoing after reflecting.Since the post lens array have miniaturization, integrated, easily advantage such as debug, lenticule is respectively to a bar bar collimation, a plurality of lens are integrated on the same substrate and form micro lens array, not only can be shaped with the method time processing of microfabrication but also be convenient to install and adjusting.Therefore, the micro lens array collimation technique is widely studied and adopts, yet this method can not solve the surface array semiconductor laser error problem effectively, and the collimation effect is a greater impact.For improving collimation efficient, reduce the influence of error ground, carried out studying many-sidedly, wherein more representational method is Decade Optical Systems, the simple lens collimation method of introducing in " Beam Shaping Laser Diode Array Output for Optical Pumping andIllumination " literary composition that the researchist of Inc delivers on IEEE in 2000: adopt sextuple adjusting bracket respectively lens accurately to be adjusted the location and used the ultraviolet glue fixed position, to reach best collimation effect, realize the collimation of whole stack one by one.This method can realize the best collimation effect of each bar bar, but the method complexity, needs a large amount of careful assembly works, cost height.
In the concentrated error of surface array semiconductor laser, defocus error and interval error generally arrive the hundreds of micron tens, can more conveniently measure.And the influence of bending error Stimulated Light device " smile " effect, generally within several microns, the influence of collimation effect is little.For these reasons, mainly consider defocus error and interval error, proposed the present invention.
Summary of the invention
Technology of the present invention is dealt with problems and is: the deficiency that overcomes existing simple lens collimation and micro lens array collimation technique, a kind of stacked array semiconductor laser alignment micro array element method for designing has been proposed, it can reach and reduce error effect effectively, collimate respond well, regulate simply convenient mounting and clamping simultaneously.
The technology of the present invention solution is: a kind of stacked array semiconductor laser alignment micro array element method for designing, its characteristics are: (1) microarray circuit elements design method when interval error is arranged is: the actual interval error of measuring every lens one by one, the Center Gap micro lens array corresponding with this interval error also made in design, makes the Center Gap of microlens array equal the Center Gap of laser instrument; Microarray circuit elements design method is when (2) defocus error being arranged: with one of them laser instrument is benchmark, measure the defocus error of each laser instrument, calculate each lenticular real work focal length and rise, there are following approximation relation in the focal length of refractive element and bore and rise: h ≈ D 2 8 ( n - 1 ) f , Wherein h is the lenticule rise, and D is the lenticule focal length, and n is a refractive index, and f is a focal length; (3) microarray circuit elements design method is when existing interval error has defocus error again: the actual interval sum of errors defocus error that realizes measuring every lens simultaneously, design is also made the Center Gap micro lens array corresponding with this interval error, make the Center Gap of microlens array equal the Center Gap of laser instrument and calculate each lenticular real work focal length and rise, according to the approximate formula between foregoing micro lens array rise, bore, the focal length h ≈ D 2 8 ( n - 1 ) f Calculate.
The present invention can also adopt mask mobile technology, gray-tone mask technology and photoetching hot-melt technology at photoresist or gelatin shaping surface designed microarray element, utilize lithographic technique, wet method transmissions technology again, reach that reproduction technology is produced on quartz, optical glass, light-sensitive emulsion material surface or by the diamond turning direct forming at optical material surface.
Lens in the above-mentioned micro lens array both can only be the bore differences or only be the focal length differences, also can be that bore and focal length are simultaneously inconsistent; When existing interval error has defocus error again, change the focal length of lens by the rise of regulating lens, when in above-mentioned (2) defocus error being arranged or in (3) according to the approximate formula between foregoing micro lens array rise, bore, the focal length h ≈ D 2 8 ( n - 1 ) f Calculate.
Lens in the described micro lens array both can have certain interval, also can be continuously every continuous arrangement.
Lens in the micro lens array both can be the one dimension lens, also can be two-dimensional lens.
The present invention's advantage compared with prior art: the existence of interval error, the optical axis that makes bar bar and corresponding collimation lens is not on same straight line; The existence of defocus error makes light-emitting area not at grade.The bore of traditional micro lens array element is identical with focal length, can not compensate it.The present invention carries out actual measurement to laser instrument at first according to the design of laser instrument light-emitting area and the angle of divergence and determine the design focal length and the bore of collimation lens, according to bar bar interval error, adjusts the Center Gap of micro lens array, makes it corresponding; According to the position of bar bar light-emitting area, determine the work focal length of each corresponding lens reality, and determine the lenticule rise according to real focal length; Actual fabrication goes out the error of the micro lens array of Center Gap, focal length variations with compensate for laser, can reduce parasitic light effectively like this, improves collimation effect and capacity usage ratio.
In a word, the present invention adopts the mode of " getting the right lensses for one's eyeglasses ", makes different Center Gap with the method for microfabrication, and the micro lens array of different rise shapes can compensate various errors preferably, meets the different needs, and can be widely used in fields such as micro-optic.
Description of drawings
Fig. 1 is the embodiment of the invention 1, and the surface array semiconductor laser light-emitting area planar structure synoptic diagram of interval error is arranged;
Fig. 2 is the embodiment of the invention 1, and the surface array semiconductor laser collimation micro lens array profile synoptic diagram of interval error is arranged;
Fig. 3 is the embodiment of the invention 1, and the surface array semiconductor laser collimation schematic diagram of interval error is arranged;
Fig. 4 is the embodiment of the invention 2, and the surface array semiconductor laser light-emitting area side view of defocus error is arranged;
Fig. 5 is the embodiment of the invention 2, the surface array semiconductor laser collimation of band defocus error micro lens array embossment profile test pattern;
Fig. 6 is the embodiment of the invention 2, the surface array semiconductor laser collimation schematic diagram of band defocus error;
Fig. 7 is the embodiment of the invention 3, and not only interband was every error but also with the surface array semiconductor laser light-emitting area of defocus error microphoto in kind;
Fig. 8 is the embodiment of the invention 3, and not only interband was every error but also with the surface array semiconductor laser collimation schematic diagram of defocus error;
Fig. 9 is the embodiment of the invention 3, adopt the present invention to not only interband every error but also with the surface array semiconductor laser collimation test findings of defocus error;
Figure 10 is the embodiment of the invention 3, the routine that not only interband is adopted every error but also with the surface array semiconductor laser collimation of defocus error uniformly-spaced, parfocal micro lens array embossment profile test pattern;
Figure 11 is the embodiment of the invention 3, adopt conventional uniformly-spaced, the parfocal micro lens array to not only interband every error but also with the surface array semiconductor laser collimation test findings of defocus error;
Figure 12 is the embodiment of the invention 4, and calibre-changeable is continuously every micro lens array embossment profile synoptic diagram.
Figure 13 is the embodiment of the invention 5, two-dimentional zoom micro lens array one dimension embossment profile synoptic diagram.
Embodiment
Embodiment 1 is for there being the surface array semiconductor laser collimation of interval error.As shown in Figure 1, surface array semiconductor laser is made up of the single laser device coupling encapsulation of 15 (bars) 20W, reaches 300 watts of power outputs, the design of every laser instrument a at interval should be 600 μ m, and wavelength is 808nm, but owing to there is the encapsulation error, therefore, the interval a of every laser instrument 1, a 2... a 15Inconsistent, i.e. a iUnequal.
The specific design method of present embodiment is: the actual interval a that measures every lens one by one i, design is also made the corresponding with it lenticule b of Center Gap 1Array as shown in Figure 2, makes lenticular Center Gap b iEqual the Center Gap a of laser instrument i, and be designed between lens at interval, the design data of 15 laser instruments is as shown in table 1.
Table 1
a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 a 9 a 10 a 11 a 12 a 13 a 14 a 15
550 610 630 650 560 570 640 530 660 570 670 550 630 570 620
b 1 b 2 b 3 b 4 b 5 b 6 b 7 b 8 b 9 b 10 b 11 b 12 b 13 b 14 b 15
550 610 630 650 560 570 640 530 660 570 670 550 630 570 620
Because the bore of lens, rise all do not change, only the relative position between lens changes, and adopts the photoetching hot melt, changes the mask perforate at interval, at the gelatin materials shaping surface, is produced on the light-sensitive emulsion material surface by the method for duplicating again.Present embodiment adopt variable spaced the micro lens array collimation scheme as shown in Figure 3, wherein 1 ' be laser instrument, 2 ' is the collimator lens array after designing.
Embodiment 2 is the surface array semiconductor laser collimation of band defocus error.Laser instrument is that the bar bar of 100 μ m * 1 μ m is formed by 5 light-emitting areas, 400 μ m at interval, and the angle of divergence is 35 ° * 8 °, wavelength is 1050nm.The bore of design collimation lens is 300 μ m, interval 400 μ m, and focal length is 536 μ m, face shape is a paraboloidal.Owing to exist bigger longitudinal error, the light-emitting area of each laser instrument is not in same plane, and the maximum defocus amount is 100 μ m.Laser instrument 3 with the centre is that the reference design method is: measure the defocus error of each laser instrument 1,2,3,4,5, the real work focal length and the relief depth that calculate each lens are as shown in table 2.
Lens 1 focal length is 436 μ m, is 1.453 with the refractive index of fused quartz, and the lens rise is: h ≈ D 2 8 ( n - 1 ) f = 300 2 8 ( 1.453 - 1 ) 436 = 57 μm , In like manner can calculate the rise of lens 2,3,4,5.
Table 2
Lens 1 Lens 2 Lens 3 Lens 4 Lens 5
Relative position deviation d i(μm) 100 50 0 58 90
Focal length (μ m) 436 486 536 478 446
Rise (μ m) 57 52 47 51.5 55
Utilize mask to move legal system and make the zoom micro lens array,, be delivered on the quartz substrate by lithographic technique again at the photoresist shaping surface, the embossment profile of quartz element as shown in Figure 5, the lens array rise has nothing in common with each other.The surface array semiconductor laser of present embodiment band defocus error collimates principle as shown in Figure 6, and wherein 1 ' is laser instrument, and 2 ' is the collimator lens array after the design.
Embodiment 3 is for there being the surface array semiconductor laser collimation of interval error and focus error simultaneously.Laser instrument is 30W by 5 power bar bar coupling encapsulation forms, 400 μ m at interval, the angle of divergence be 40 ° * 10 (.The laser instrument luminous zone as shown in Figure 7, the spacing of each bar bar is inconsistent, promptly a1, a2, a3, a4 are unequal, simultaneously, light-emitting area not on same straight line d1, d2, d3, d4 unequal.Adopt the micro lens array of changing distance, varifocal to collimate, principle as shown in Figure 8, wherein 1 ' be laser instrument, 2 ' is the collimator lens array after designing.Method for designing according to embodiment 1 and embodiment 2 changes lenticular interval and relief depth simultaneously, adopts the gray scale mask method at the photoresist shaping surface, transmits fabrication techniques to the optical glass material surface by wet method again.Light beam is behind collimation, and apart from the hot spot at light-emitting area 125mm place as shown in Figure 9, half-angle overall with area is 4.7mm.According to collimating angle of divergence computing formula:
2 θ = arctg d 2 - d 1 l
Wherein, d 1, d 2Be respectively the spot size at diverse location place, l is a spacing.Because of this laser instrument light-emitting area is 1.6mm, the angle of divergence is 25mard as calculated.
For verifying the actual effect of this method, Jiao such as contrast employing, uniformly-spaced lens are to the identity element test that collimates, and the lens-array bore is 300, and (m, focal length are 400, and (m, the embossment profile diagram as shown in figure 10.In the real system behind collimation apart from the hot spot at light-emitting area 125mm place as shown in figure 11, half-angle overall with area is 6.6mm, the collimation back angle of divergence is 40mard as calculated, simultaneously, the edge also has a lot of heterochromatic lights, the collimation effect is than the obvious reduction of this method.
Embodiment 4 is semiconductor laser collimations of 5 bar bars, and the bar bar is spaced apart 600 (m.Because the influence of interval error is more serious, adopt the method for diamond cutting to make the calibre-changeable micro lens array, aperture of lens is identical at interval with the bar bar, and does not have between lens to arrange continuously at interval, and as shown in figure 12, design data is as shown in table 3.
Table 3
ai a1 a2 a3 a4 a5
Bore ((m) 600 650 620 550 600
bi b1 b2 b3 b4 b5
Bore ((m) 600 650 620 550 600
Embodiment 5 is two-dimentional micro lens arrays, is used for light beam and focuses on.Design objective is: the array number be 10 (10, wavelength 0.78 (m, bore 500 (m, focal length 2.3mm.Because system's specific demand, the focal length of lens that wherein has need be done an amount of adjustment, realizes by the relief depth that changes the array element.Adopt the gray scale mask method, on photoresist, be shaped, and be delivered on the quartz substrate, as shown in figure 13 by lithographic technique.

Claims (5)

1. stacked array semiconductor laser alignment micro array element method for designing, it is characterized in that: (1) is when having interval error, the method for designing of described stacked array semiconductor laser alignment micro array element is: the actual interval error of measuring every lens one by one, the Center Gap micro lens array corresponding with this interval error also made in design, makes the Center Gap of microlens array equal the Center Gap of laser instrument; When (2) defocus error being arranged, the method for designing of described stacked array semiconductor laser alignment micro array element is: with one of them laser instrument is benchmark, measure the defocus error of each laser instrument, calculate each lenticular real work focal length and rise, there are following approximation relation in focal length and bore and rise: h ≈ D 2 8 ( n - 1 ) f , Wherein h is the lenticule rise, and D is the lenticule focal length, and n is a refractive index, and f is a focal length; (3) when existing interval error has defocus error again, the method for designing of described stacked array semiconductor laser alignment micro array element is: the actual interval sum of errors defocus error that realizes measuring every lens simultaneously, design is also made the Center Gap micro lens array corresponding with this interval error, make the Center Gap of microlens array equal the Center Gap of laser instrument and calculate each lenticular real work focal length and rise, according to the approximate formula between foregoing micro lens array rise, bore, the focal length h ≈ D 2 8 ( n - 1 ) f Calculate.
2. stacked array semiconductor laser alignment micro array element method for designing according to claim 1 is characterized in that: the lens in the described micro lens array both can only be the bore differences or only be the focal length differences, also can be that bore and focal length are simultaneously inconsistent.
3. stacked array semiconductor laser alignment micro array element method for designing according to claim 1 is characterized in that: described when defocus error or when existing interval error has defocus error again, change the focal length of lens by the rise of regulating lens.
4. stacked array semiconductor laser alignment micro array element method for designing according to claim 1 is characterized in that: the lens in the described micro lens array both can have certain interval, also can be continuously every continuous arrangement.
5. stacked array semiconductor laser alignment micro array element method for designing according to claim 1 is characterized in that: the lens in the described micro lens array both can be the one dimension lens, also can be two-dimensional lens.
CNB2005100114925A 2005-03-29 2005-03-29 Stacked array semiconductor laser alignment micro array element Expired - Fee Related CN100462831C (en)

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CN1971395B (en) * 2006-12-13 2011-02-09 中国科学院光电技术研究所 A manufacturing method of optical limiter of photon crystal
DE102012108347A1 (en) 2012-09-07 2014-03-13 Limo Patentverwaltung Gmbh & Co. Kg Method and device for focusing laser light
CN111258079B (en) * 2020-02-18 2021-11-19 中国科学院光电技术研究所 Precise phase adjusting mechanism of laser retroreflector array and detection and adjustment method thereof
CN113820788A (en) * 2021-10-05 2021-12-21 桂林电子科技大学 Shaping method for linear emergent light field at optical fiber end of flow cytometer

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CN2643272Y (en) * 2003-09-10 2004-09-22 得信勇精密工业股份有限公司 Laser collimation correcting unit
CN1553244A (en) * 2003-05-29 2004-12-08 中国科学院光电技术研究所 Combing and adjusting method for beam collimation microlens array pair of semiconductor laser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5558666A (en) * 1994-01-14 1996-09-24 Coherent, Inc. Handpiece for producing highly collimated laser beam for dermatological procedures
JP2004085589A (en) * 2002-06-28 2004-03-18 Ricoh Opt Ind Co Ltd Module for light source and light source device
CN1553244A (en) * 2003-05-29 2004-12-08 中国科学院光电技术研究所 Combing and adjusting method for beam collimation microlens array pair of semiconductor laser
CN2643272Y (en) * 2003-09-10 2004-09-22 得信勇精密工业股份有限公司 Laser collimation correcting unit

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大功率半导体激光器阵列光束光纤耦合研究. 周崇喜，刘银辉，谢伟民，杜春雷.中国激光，第31卷第11期. 2004 *

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