CN100416797C - Symmetric inductive component - Google Patents
Symmetric inductive component Download PDFInfo
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- CN100416797C CN100416797C CNB2006101388471A CN200610138847A CN100416797C CN 100416797 C CN100416797 C CN 100416797C CN B2006101388471 A CNB2006101388471 A CN B2006101388471A CN 200610138847 A CN200610138847 A CN 200610138847A CN 100416797 C CN100416797 C CN 100416797C
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Abstract
The symmetry inductance element includes first and second parts of wire windings symmetrical each other, and joint coupling part. Each part of wire winding includes first, second, third, and fourth lead wire layers in semicycle type arranged in concentricity. Each lead wire layer in semicycle type possesses first and second ends. The joint coupling part includes first and second paired connection layers, and hereinto one pair is up cross connection layer, the other is low cross connection layer. Through the first paired connection layer, second ends of first and fourth lead wire layers in semicycle type in first part of wire winding are connected to second ends of second and third lead wire layers in semicycle type in second part. Through the second paired connection layer, second ends of first and fourth lead wire layers in semicycle type in second part of wire winding are connected to second ends of second and third lead wire layers in semicycle type in first part of wire winding.
Description
Technical field
The present invention relates to a kind of semiconductor device, particularly relate to a kind of symmetrical inductance element and be applicable to differential-type (differential) operation.
Background technology
Many numerals and analog component and circuit successfully apply to semiconductor integrated circuit.Above-mentioned parts comprise passive component, for example resistance, electric capacity or inductance etc.Typical semiconductor integrated circuit comprises silicon base.The above dielectric layer of one deck is arranged in the substrate, and the above metal level of one deck is arranged in the dielectric layer.These metal levels can form the chip built-in parts by existing semiconductor process techniques, for example chip built-in inductance element (on-chip inductor).
Traditionally, the chip built-in inductance is formed in the substrate and applies to radio frequency band (radio frequencyband) integrated circuit (IC) design.Please refer to Fig. 1, it shows existing two circle symmetric form inductance element floor map.This inductance element is formed in the insulating barrier 110 of substrate 100 tops, comprising: be symmetricly set on first and second winding sections in the insulating barrier 110 of dotted line 2 both sides.First winding section comprises the first and second half-turn type conductor layers 101,103, and second winding section comprises the third and fourth half-turn type conductor layer 102,104.The second half-turn type conductor layer, the 103 parallel first half-turn type conductor layers 101 also are positioned at its outside.The 4th half-turn type conductor layer 104 parallel the 3rd half-turn type conductor layers 102 also are positioned at its outside.Each half-turn type conductor layer has first and second ends 10 and 20, and wherein first end 10 of the first half-turn type conductor layer 101 extends and be connected to first end 10 of the 3rd half-turn type conductor layer 102.
In order to keep the inductance element geometrical symmetry, second end 20 of the second half-turn type conductor layer 103 is electrically connected with second end 20 of the 3rd half-turn type conductor layer 102 by cross-over connection (underpass) layer down 111.In addition, second end 20 of the 4th half-turn type conductor layer 104 is electrically connected with second end 20 of the first half-turn type conductor layer (underpass) 101 by last cross-over connection (cross) layer 113.The second and the 4th half-turn type conductor layer 103 and 104 first end 10 have the portion of extending laterally 30 and 40, in order to as the I/O end.
For the quality factor (Q value) of further improving inductance element, the someone proposes to increase the live width of each half-turn type conductor layer, as shown in Figure 2.In Fig. 2, just with Fig. 1 figure number components identical, the relevant narration of this element can be consulted leading portion.
Recently, increasing wireless telecommunications design uses differential circuit reducing common mode (commonmode) noise, and the inductance that applies to above-mentioned differential circuit is required to be symmetrical expression and prevents that common-mode noise from producing.In the inductance element of Fig. 1 and 2, to compare with last cross-over connection layer 113, following cross-over connection layer 111 is near substrate 100.Therefore, by the second and the 3rd half-turn type conductor layer 102 and 103 and following first coil (primary coil) that constituted of cross-over connection layer 111, its with substrate 100 between parasitic capacitance greater than by the first and the 4th half-turn type conductor layer 101 and 104 and on second coil (secondarycoil) that constituted of cross-over connection layer 113 and the parasitic capacitance between the substrate 100.Moreover because the thickness of cross-over connection layer 111 is less than last cross-over connection layer 113 down, therefore the conductor losses of first coil is also greater than second coil.Thus, in differential operation, above-mentioned symmetrical inductance element also can't effectively reduce common-mode noise.
Therefore, be necessary to seek new symmetrical inductive element design, with effective reduction common-mode noise.
Summary of the invention
In view of this, the invention provides a kind of symmetrical inductance element, comprising: insulating barrier, first and second winding section and couplings.Insulating barrier is arranged in the substrate.First and second winding sections are symmetrically set in insulating barrier, each winding section comprises the first, second, third and the 4th half-turn type conductor layer of concentric arrangement successively, and each half-turn type conductor layer has first end and second end, and wherein first end of the first of each winding section and the 3rd half-turn type conductor layer couples mutually, first end of the second half-turn type conductor layer of first and second winding sections couples mutually and first end of the 4th half-turn type conductor layer of first and second winding sections couples mutually.Couplings is arranged in the insulating barrier between first and second winding section, comprising: first pair and second pair of articulamentum, another is cross-over connection layer down to articulamentum to wherein a pair of articulamentum for last cross-over connection layer.First of first winding section is connected with second end of the 3rd half-turn type conductor layer with second of second winding section respectively by first pair of articulamentum with second end of the 4th half-turn type conductor layer, and first being connected with second end of the 3rd half-turn type conductor layer with second of first winding section respectively by second pair of articulamentum with the 4th half-turn type conductor layer of second winding section.
The present invention also provides a kind of symmetrical inductance element, it comprise be arranged on suprabasil insulating barrier, be arranged at least two groups first lead group in this insulating barrier, wherein each first lead group has two first leads; Be arranged at least two groups second lead group in this insulating barrier, wherein each second lead group has two second leads; The central area that is surrounded by this first lead group and this second lead group, and the first lead group and the second lead group are respectively with respect to this central area symmetric position; And at least one group of cross-over connection layer.Wherein, the cross-over connection layer is used to connect the first lead group and the second lead group in correspondence with each other, and every group of cross-over connection layer has the first cross-over connection layer and the second cross-over connection layer.In addition, each first lead group has two first leads, and each second lead group has two second leads.Further, at the odd number group first lead group and the second lead group of counting outward by the central area, first lead that is positioned at the inboard is electrically connected with second lead that is positioned at the outside by the first cross-over connection layer, and first lead outside being positioned at is electrically connected with second lead that is positioned at the inboard by the second cross-over connection layer.In addition at the even number set first lead group and the second lead group of counting outward by the central area, first lead that is positioned at the inboard is electrically connected with second lead that is positioned at the outside by the second cross-over connection layer, and first lead outside being positioned at is electrically connected with second lead that is positioned at the inboard by the first cross-over connection layer.
The present invention provides a kind of symmetrical inductance element again, and it comprises and is arranged on suprabasil insulating barrier, is arranged at least one first lead group in this insulating barrier, is arranged at least one second lead group and at least one group of cross-over connection layer in this insulating barrier.Wherein, this group cross-over connection layer is used to connect the first lead group and the second lead group in correspondence with each other, and every group of cross-over connection layer has the first cross-over connection layer and the second cross-over connection layer.Remove this, each first lead group has four first leads, and each second lead group has four second leads, wherein this first lead group and the axisymmetric setting of the second lead group.Further, two first leads that are arranged in the outside in the first lead group are electrically connected on the corresponding second lead group by two first cross-over connection layers and are positioned at two second inboard leads.In the first lead group, be arranged in two first inboard leads and be electrically connected on two second leads that the corresponding second lead group is positioned at the outside by two second cross-over connection layers.
Description of drawings
Fig. 1 is the floor map of showing existing two circle symmetric form inductance elements.
Fig. 2 is the floor map of showing existing two circle symmetric form inductance elements.
Fig. 3 is the floor map of showing according to two circle symmetric form inductance elements of the embodiment of the invention.
Fig. 4 shows the floor map of two circle symmetric form inductance elements according to another embodiment of the present invention.
The simple symbol explanation
In the part accompanying drawing of prior art
2～dotted line; 10～the first ends; 20～the second ends; 30,40～extend laterally portion; 100～substrate; 101～the first half-turn type conductor layers; 103～the second half-turn type conductor layers; 102～the 3rd half-turn type conductor layers; 104～the 4th half-turn type conductor layers; 110～insulating barrier; 111～following cross-over connection layer; 113～upward cross-over connection layers.
In the part accompanying drawing of the technology of the present invention
4～dotted line; 50～the first ends; 60～the second ends; 70,80～extend laterally portion; 300～substrate; 301,302,309,310～the first half-turn type conductor layers; 303,304,311,312～the second half-turn type conductor layers; 305,306,313,314～the 3rd half-turn type conductor layers; 307,308,315,316～the 4th half-turn type conductor layers; 410～insulating barrier; 320,322～the first pairs of articulamentums; 321,323～the second pairs of articulamentums; 324, the 326～three pair of articulamentum; 325, the 327～four pair of articulamentum; S～line-spacing; W～live width; 601～central area; 701,801～following articulamentum.
Embodiment
The floor map of the two circles symmetry inductance element of the embodiment of the invention is described below in conjunction with Fig. 3.The symmetry inductance element comprises: insulating barrier 410, first and second winding sections and couplings.Insulating barrier 410 is arranged in the substrate 300.
In addition, insulating barrier 410 can be individual layer low dielectric material layer or multilayered dielectric structure.In the present embodiment, insulating barrier 410 can comprise silicon oxide layer, silicon nitride layer or low dielectric material layer.
First winding section is arranged in the insulating barrier 410, and is positioned at first side of dotted line 4.First winding section comprises the first, second, third and the 4th half-turn type conductor layer 301,303,305 and 307 of concentric arrangement successively.Second winding section is arranged in the insulating barrier 410, and is positioned at second side of dotted line 4, and this second side is with respect to first side.Second winding section comprises the first, second, third and the 4th half-turn type conductor layer 302,304,306 and 308 of concentric arrangement successively.Second winding section is that symmetry axis is symmetrical in first winding section with dotted line 4.First and second winding sections can constitute and are roughly round, square type, hexagonal, eight limit types or polygonal external form.Herein, for simplifying accompanying drawing, illustrate as example with eight limit types.Moreover the material of first and second winding sections can be made of metal, for example: copper, aluminium or its alloy.
In certain embodiments, first, second, third of first winding section can have identical live width W and line-spacing S with 307 with the first, second, third and the 4th half-turn type conductor layer 302,304,306 and 308 of second winding section with the 4th half-turn type conductor layer 301,303,305.
Moreover each half-turn type conductor layer has first end 50 and second end 60.In the present embodiment, the first and the 3rd half-turn type conductor layer 301 of first winding section and 305 first end 50 couple mutually, and the first and the 3rd half-turn type conductor layer 302 of second winding section and 306 first end 50 couple mutually.For example, by following articulamentum 701 connecting the first and the 3rd half-turn type conductor layer 301 and 305 of first winding section, and the first and the 3rd half-turn type conductor layer 302 and 306 of second winding section also by another down articulamentum 801 to be connected to each other.
The first half-turn type conductor layer 301 and 302 of first and second winding sections has the portion of extending laterally 70 and 80, in order to input or output end as signal.Moreover first end 50 of the second half-turn type conductor layer 303 of first winding section extends to first end 50 of the second half-turn type conductor layer 304 of second winding section to couple mutually with it.First end 50 of the 4th half-turn type conductor layer 307 of first winding section extends to first end 50 of the 4th half-turn type conductor layer 308 of second winding section to couple mutually with it.
Couplings is arranged in the insulating barrier 410 between first and second winding section couplings is set.This couplings comprises first pair of articulamentum 320 and the 322 and second pairs of articulamentums 321 and 323, to connect second end 60 of first and second winding sections.
In an embodiment of the present invention, in order to keep the inductance element geometrical symmetry, the first pair of articulamentum 320 is connected second end 60 of the second half-turn type conductor layer 304 of second end 60 of the first half-turn type conductor layer 301 of first winding section and second winding section with 322.And, second end 60 of second end 60 of the 4th half-turn type conductor layer 307 of articulamentum 322 connections first winding section and the 3rd half-turn type conductor layer 306 of second winding section.Moreover the second pair of articulamentum 321 is connected second end 60 of the second half-turn type conductor layer 303 of second end 60 of the first half-turn type conductor layer 302 of second winding section and first winding section with 323.Second end 60 of second end 60 of the 4th half-turn type conductor layer 308 of articulamentum 323 connections second winding section and the 3rd half-turn type conductor layer 305 of first winding section.
Among first pair of articulamentum (320 and 322) and second pair of articulamentum (321 and 323), a pair of for last cross-over connection layer another to being following cross-over connection layer.In the present embodiment, the first pair of articulamentum 320 and 322 is last cross-over connection layer, and the second pair of articulamentum 321 and 323 is cross-over connection layer down.In other embodiments, the first pair of articulamentum 320 and 322 can be down the cross-over connection layer, and the second pair of articulamentum 321 and 323 is last cross-over connection layer.
In Fig. 3, the second and the 4th half-turn type conductor layer 304 and 308 of the first and the 3rd half-turn type conductor layer 301 of first winding section and 305 and second winding section can constitute first coil, and this first coil can have last cross-over connection layer and following cross-over connection layer with as electric connection layer.Remove this, the second and the 4th half-turn type conductor layer 303 and 307 of the first and the 3rd half-turn type conductor layer 302 of second winding section and 306 and first winding section can constitute second coil, and this second coil can have last cross-over connection layer and following cross-over connection layer with as electric connection layer.Just, the quantity of last cross-over connection layer and following cross-over connection layer is same as the quantity that goes up cross-over connection layer and following cross-over connection layer in second coil in first coil.
Therefore, the parasitic capacitance between first coil and the substrate 300 can be same as the parasitic capacitance between second coil and the substrate 300 substantially, and the conductor losses of first coil also is same as second coil substantially.In differential operation, can have identical substantially parasitic capacitance and conductor losses because of first coil and second coil according to symmetrical inductance element of the present invention, and effectively reduce common-mode noise.
Below in conjunction with Fig. 4 the symmetrical inductance element of other embodiment of the present invention is described, the parts that wherein are same as symmetrical inductance element among Fig. 3 use identical label and omit relevant explanation.In the present embodiment, symmetrical inductance element also comprises: the 3rd winding section, the 4th winding section and second couplings.The 3rd winding section is arranged in the insulating barrier 410 in the outside, first winding section, and parallel first winding section.The 3rd winding section comprises the first, second, third and the 4th half-turn type conductor layer 309,311,313 and 315 that is arranged in order.The 4th winding section is arranged in the insulating barrier 410 in the outside, second winding section, and parallel second winding section.Second winding section comprises the first, second, third and the 4th half-turn type conductor layer 310,312,314 and 316 that is arranged in order.Third and fourth winding section can constitute and is roughly round, square type, hexagonal, eight limit types or polygonal external form.Herein, for simplifying accompanying drawing, illustrate as example with eight limit types.Moreover the material of third and fourth winding section can be made of metal, for example: copper, aluminium or its alloy.
In the embodiment about Fig. 4, first, second, third of the 3rd winding section can have identical live width W and line-spacing S with 315 with the first, second, third and the 4th half-turn type conductor layer 310,312,314 and 316 of the 4th winding section with the 4th half-turn type conductor layer 309,311,313.
In the present embodiment, the first and the 3rd half-turn type conductor layer 309 of the 3rd winding section and 313 first end 50 couple mutually, and are coupled to the first lap type conductor layer 301 of first winding section.The first and the 3rd half-turn type conductor layer 310 of second winding section and 314 first end 50 couple mutually, and are coupled to the first lap type conductor layer 302 of second winding section.For example, by following articulamentum 701 connecting the first and the 3rd half-turn type conductor layer 309 and 313 of the 3rd winding section, and the first and the 3rd half-turn type conductor layer 310 and 314 of the 4th winding section also by another down articulamentum 801 to be connected to each other.
The first half-turn type conductor layer 309 and 310 of third and fourth winding section has the portion of extending laterally 70 and 80 respectively, in order to input or output end as signal.Moreover first end 50 of the second half-turn type conductor layer 311 of the 3rd winding section extends to first end 50 of the second half-turn type conductor layer 312 of the 4th winding section to couple mutually with it.First end 50 of the 4th half-turn type conductor layer 315 of the 3rd winding section extends to first end 50 of the 4th half-turn type conductor layer 316 of the 4th winding section to couple mutually with it.
In the insulating barrier 410 between the 3rd and the 4th winding section couplings is set, and this couplings comprises the 3rd pair of articulamentum 324 and 326, the 4th pair of articulamentum 325 and 327, to connect second end 60 of third and fourth winding section.Second end 60 of second end 60 of the first half-turn type conductor layer 309 of articulamentum 324 connections the 3rd winding section and the second half-turn type conductor layer 312 of the 4th winding section, and second end 60 of the 3rd half-turn type conductor layer 314 of second end 60 of the 4th half-turn type conductor layer 315 of articulamentum 326 connections the 3rd winding section and the 4th winding section.Moreover, second end 60 of second end 60 of the first half-turn type conductor layer 310 of articulamentum 325 connections the 4th winding section and the second half-turn type conductor layer 311 of the 3rd winding section, and second end 60 of the 3rd half-turn type conductor layer 313 of second end 60 of the 4th half-turn type conductor layer 316 of articulamentum 327 connections the 4th winding section and the 3rd winding section.
Among the 3rd pair of articulamentum (324 and 326) and the 4th pair of articulamentum (325 and 327), a pair of for last cross-over connection layer another to being following cross-over connection layer.In the present embodiment, see Fig. 4, the 3rd pair of articulamentum 324 and 326 is last cross-over connection layer, and the 4th pair of articulamentum 325 and 327 is cross-over connection layer down.In other embodiments, the 3rd pair of articulamentum 324 and 326 can be down the cross-over connection layer, and the 4th pair of articulamentum 325 and 327 is last cross-over connection layer.
In the embodiment about Fig. 4, the second and the 4th half-turn type conductor layer 304 of the first and the 3rd half-turn type conductor layer 301 of first winding section and the first and the 3rd half-turn type conductor layer 309 of the 305, the 3rd winding section and 313, second winding section and the second and the 4th half-turn type conductor layer 312 and 316 of the 308 and the 4th winding section can constitute first coil; And the second and the 4th half-turn type conductor layer 311 and 315 of the second and the 4th half-turn type conductor layer 303 of the first and the 3rd half-turn type conductor layer 310 of the first and the 3rd half-turn type conductor layer 302 of second winding section and the 306, the 4th winding section and 314, first winding section and the 307 and the 3rd winding section can constitute second coil.This first coil and second coil can have the last cross-over connection layer and the following cross-over connection layer of equal number.Therefore, in differential operation, this symmetrical inductance element can effectively reduce common-mode noise.
In an embodiment of the present invention, the connected mode of the following cross-over connection layer and first end or second end is, two ends of cross-over connection layer connect a hole (via) respectively, the conductor material is arranged in this hole, and (for example: metal species materials such as copper, aluminium or its alloy), and first end of an end of hole and conductor layer or second end are electrically connected.Remove this, the connected mode of following articulamentum (701 or 801) and first end is, first end of conductor layer connects a hole, has the conductor material (for example: metal species materials such as copper, aluminium or its alloy), and an end of hole and the electrical connection of following articulamentum in this hole.
The description of comprehensive above-mentioned embodiment about Fig. 3 and Fig. 4, we can be further elaborated the design of inductance element in the embodiments of the invention.
In Fig. 3 and Fig. 4, be can be considered central area 601 by institute's area surrounded such as conductor layers (or claiming lead) 307 and 308.By central area 601 outward, conductor layer 307,303,308,304,315,311,316 and 312 etc. can be considered the odd number lead, and conductor layer 305,301,306,302,313,309,314 and 310 etc. can be considered the even number lead.Each lead all has first end 50 and second end 60.And to central area 601 two leads ( lead 301 and 302 in Fig. 3, or the lead in Fig. 4 309 and 310) farthest, first end 50 of each lead connects extension 70 and extension 80 respectively.
Connected mode about first end 50 of lead has two classes.The one,, be to be electrically connected mutually at first end of the even number lead of dotted line 4 the same sides.The 2nd,, for the corresponding odd number lead of dotted line 4 both sides, first end of these leads is to be electrically connected mutually.
About first kind mode, for example, in Fig. 3, at the lead 301 and 305 of dotted line 4 one sides, it belongs to the even number lead, and by articulamentum 701 electrical connections down.At the lead 302 and 306 of dotted line 4 opposite sides, it also belongs to the even number lead, and by articulamentum 801 electrical connections down.In Fig. 4, at the lead 301,305,313 and 309 of dotted line 4 one sides, it belongs to the even number lead in addition, and by articulamentum 701 electrical connections down.At the lead 306,302,314 and 310 of dotted line 4 opposite sides, it also belongs to the even number lead, and by articulamentum 801 electrical connections down.It should be noted the following articulamentum at Fig. 4, its single articulamentum is to connect all even number leads, and perhaps it can be made of a plurality of articulamentum, and this articulamentum only is electrically connected adjacent two even number leads.
About the second class mode, for example, in Fig. 3 and Fig. 4, in the lead 307,303,315 of dotted line 4 one sides and 311 etc., it belongs to the odd number lead, and these leads are respectively with in electrical connections such as dotted line lead 308,304,316 4 opposite sides, in correspondence with each other and 312.
Connected mode about second end 60 of lead, if with two adjacent leads (for example: lead 307 and 305, lead 308 and 306, lead 303 and 301, lead 304 and 302) is a lead group, second end of the inboard wire of each lead group can be electrically connected to second end of the outboard wire of corresponding lead group, and this connection is by the cross-over connection layer.Just, be center and in correspondence with each other lead group needs two cross-over connection layers to be electrically connected mutually with dotted line 4.And that these two cross-over connection layers can be up and down is staggered.For example, in Fig. 3 and Fig. 4, one side of dotted line 4 has the 1st group of first lead group (lead 307 and 305) and the 2nd group of first lead group (lead 303 and 301), and the opposite side of dotted line 4 has the 1st group of second lead group (lead 308 and 306) and the 2nd group of second lead group ( lead 304 and 302).Between the 1st group of first lead group and the 1st group of second lead group two cross-over connection layers 322 and 323 are arranged, and between the 2nd group of first lead group and the 2nd group of second lead group two cross-over connection layers 320 and 321 are arranged.
In Fig. 3 and Fig. 4, the odd number group lead group of being counted outward by central area 601 can have the staggered up and down structure of identical cross-over connection layer, and this structure is different from the staggered up and down structure of cross-over connection layer of even number set lead group.For example, when the cross-over connection layer of the outboard wire 306 of inboard wire 307 that connects the 1st group of first lead group and the 1st group of second lead group is when being arranged on one deck with lead, the cross-over connection layer of the outboard wire 302 of the inboard wire 305 of the 2nd group of first lead group and the 2nd group of second lead group will place the below of conductor layer.At this moment, the cross-over connection layer that connects the inboard wire 308 of the outboard wire 305 of the 1st group of first lead group and the 1st group of second lead group is to place the conductor layer below, and the cross-over connection layer of the exafference line 304 of the outboard wire 301 of the 2nd group of first lead group and the 2nd group of second lead group is to be arranged at same one deck with lead.
About the connected mode of second end 60 of lead, four leads that also can be adjacent (for example: lead 307,305,303 and 301, lead 308,306,304 and 302) are that a lead group is set forth.
For example, in Fig. 3 and Fig. 4, lead 307,305,303 and 301 etc. constitutes the first lead group, and lead 308,306,304 and 302 etc. constitute the second lead group.The outboard wire 301 of the first lead group and 307 second end are electrically connected to the inboard wire 304 of the second lead group and 306 second end by the first cross-over connection layer (320 and 322).And second end of the inboard wire 303 of the first lead group and 305 also is electrically connected to the outboard wire 302 of the second lead group and 308 second end by the second cross-over connection layer (321 and 323).
Remove this, first cross-over connection layer (320 and 322) and the second cross-over connection layer (321 and 323) are staggered up and down.And this staggered up and down principle comprises:
(1) in first cross-over connection layer (320 and 322) and the second cross-over connection layer (321 and 323), cross-over connection layer meeting and the same one deck of conductor layer, and another cross-over connection layer can place the below of conductor layer.
(2) can be staggered up and down near two cross-over connection layers (322 and 323) of central area 601, and can be staggered up and down away from two cross-over connection layers (320 and 321) of central area 601.
It should be noted that in an embodiment of the present invention about the electric connection mode of conductor layer second end, its reason of not carrying out at the first end place is to avoid the problem by the inductance symmetry-violating that parasitic capacitance caused of substrate generation.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those of ordinary skill under any in the technical field; without departing from the spirit and scope of the present invention; when can doing to change and revise, thus protection scope of the present invention when with claims the person of being defined be as the criterion.
Claims (10)
1. symmetrical inductance element comprises:
Insulating barrier is arranged in the substrate;
First and second winding sections, be symmetrically set in this insulating barrier, each winding section comprises the first, second, third and the 4th half-turn type conductor layer of concentric arrangement successively, and each half-turn type conductor layer has first end and second end, wherein this first end of this of each winding section first and the 3rd half-turn type conductor layer couples mutually, this first end of this second half-turn type conductor layer of first and second winding sections couples mutually, and this first end of the 4th half-turn type conductor layer of first and second winding sections couples mutually; With
First couplings, be arranged on this first and this second winding section between this insulating barrier in, comprising:
First pair of articulamentum connects this second end of the 3rd half-turn type conductor layer of the 4th half-turn type conductor layer of this second end of this second half-turn type conductor layer of this first half-turn type conductor layer of this first winding section and this second winding section and this first winding section and second winding section respectively;
Second pair of articulamentum connects this second end of the 3rd half-turn type conductor layer of the 4th half-turn type conductor layer of this second end of this second half-turn type conductor layer of this first half-turn type conductor layer of this second winding section and this first winding section and this second winding section and first winding section respectively;
Wherein in this first couple and this second pair of articulamentum a pair of for last cross-over connection layer another to being cross-over connection layer down.
2. symmetrical inductance element as claimed in claim 1 also comprises:
Third and fourth winding section, be arranged in this insulating barrier in this outside, first and second winding sections, and parallel this first and second winding section of difference, each winding section comprises first of concentric arrangement successively, second, the third and fourth half-turn type conductor layer, and each half-turn type conductor layer has first end and second end, wherein this first end of this of each winding section first and the 3rd half-turn type conductor layer couples mutually, this first end of this second half-turn type conductor layer of third and fourth winding section couples mutually, and this first end of the 4th half-turn type conductor layer of third and fourth winding section couples mutually; With
Second couplings is arranged in this insulating barrier between the 3rd and the 4th winding section, comprising:
The 3rd pair of articulamentum connects this second end of the 3rd half-turn type conductor layer of the 4th half-turn type conductor layer of this second end of this second half-turn type conductor layer of this first half-turn type conductor layer of the 3rd winding section and the 4th winding section and the 3rd winding section and the 4th winding section respectively; With
The 4th pair of articulamentum connects this second end of the 3rd half-turn type conductor layer of the 4th half-turn type conductor layer of this second end of this second half-turn type conductor layer of this first half-turn type conductor layer of the 4th winding section and the 3rd winding section and the 4th winding section and the 3rd winding section respectively;
Wherein in the 3rd pair and the 4th pair of articulamentum a pair of for last cross-over connection layer another to being cross-over connection layer down.
3. symmetrical inductance element comprises:
Insulating barrier is arranged in the substrate;
At least two groups first lead group is arranged in this insulating barrier, and wherein each first lead group has two first leads (301,303; 305,307);
At least two groups second lead group is arranged in this insulating barrier, and wherein each second lead group has two second leads (302,304; 306,308);
The central area, it is surrounded by this first lead group and this second lead group, and this first lead group is symmetrical arranged with respect to this central area respectively with this second lead group; With
At least one group of cross-over connection layer is used to connect in correspondence with each other the first lead group and the second lead group, and wherein every group of cross-over connection layer has the first cross-over connection layer and the second cross-over connection layer;
Wherein, at the odd number group first lead group and the second lead group of counting outward by the central area, first lead (307) that is positioned at the inboard is electrically connected with second lead (306) that is positioned at the outside by the first cross-over connection layer, and first lead (305) outside being positioned at is electrically connected with second lead (308) that is positioned at the inboard by the second cross-over connection layer;
Wherein, at the even number set first lead group and the second lead group of counting outward by the central area, first lead (303) that is positioned at the inboard is electrically connected with second lead (302) that is positioned at the outside by the second cross-over connection layer, and first lead (301) outside being positioned at is electrically connected with second lead (304) that is positioned at the inboard by the first cross-over connection layer.
4. symmetrical inductance element as claimed in claim 3, first lead that wherein is arranged in the outside in the first lead group is electrically connected on first lead that the first adjacent lead group is positioned at the outside.
5. symmetrical inductance element as claimed in claim 3, second lead that wherein is arranged in the outside in the second lead group is electrically connected on second lead that the second adjacent lead group is positioned at the outside.
6. symmetrical inductance element as claimed in claim 3 wherein is arranged in the first inboard lead and is electrically connected on second lead that the corresponding second lead group is positioned at the inboard in the first lead group.
7. symmetrical inductance element comprises:
Insulating barrier is arranged in the substrate;
At least one first lead group is arranged in this insulating barrier, and wherein this first lead group has four first leads (301,303,305,307);
At least one second lead group is arranged in this insulating barrier, and wherein this second lead group has four second leads (302,304,306,308), and wherein this first lead group and this second lead group are provided with each other axisymmetrically; With
At least one group of cross-over connection layer is used to connect in correspondence with each other the first lead group and the second lead group, and wherein every group of cross-over connection layer has the first cross-over connection layer and the second cross-over connection layer;
Wherein, in this first lead group, be positioned at two first leads (301 in two outsides, 307) be electrically connected on two second leads (304 that are positioned at the inboard in this second lead group by two first cross-over connection layers, 306), and in this first lead group, be positioned at two first inboard leads (303,305) be electrically connected on two second leads (302,308) that are positioned at two outsides in this second lead group by two second cross-over connection layers.
8. symmetrical inductance element as claimed in claim 7 wherein, in each lead group, is to be electrically connected mutually by the interior even number lead of number outward.
9. symmetrical inductance element as claimed in claim 7 wherein, is electrically connected in the adjacent lead group by the interior even number lead of number outward by the interior even number lead of number outward in the lead group.
10. symmetrical inductance element as claimed in claim 7 wherein, is electrically connected in the corresponding second lead group by interior odd number second lead of number outward by interior odd number first lead of number outward in the first lead group.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101388471A CN100416797C (en) | 2006-09-19 | 2006-09-19 | Symmetric inductive component |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101388471A CN100416797C (en) | 2006-09-19 | 2006-09-19 | Symmetric inductive component |
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| Publication Number | Publication Date |
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| CN1937207A CN1937207A (en) | 2007-03-28 |
| CN100416797C true CN100416797C (en) | 2008-09-03 |
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| CNB2006101388471A Active CN100416797C (en) | 2006-09-19 | 2006-09-19 | Symmetric inductive component |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI691979B (en) * | 2019-10-24 | 2020-04-21 | 威鋒電子股份有限公司 | On-chip inductor structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0902443A2 (en) * | 1997-09-11 | 1999-03-17 | Siemens Aktiengesellschaft | Planar coupled coil arrangement |
| CN1241794A (en) * | 1998-07-06 | 2000-01-19 | Tdk株式会社 | Inductor device and process of production thereof |
| CN1649087A (en) * | 2004-01-29 | 2005-08-03 | 国际商业机器公司 | Method for forming inductor and semiconductor structure |
| US6972658B1 (en) * | 2003-11-10 | 2005-12-06 | Rf Micro Devices, Inc. | Differential inductor design for high self-resonance frequency |
-
2006
- 2006-09-19 CN CNB2006101388471A patent/CN100416797C/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0902443A2 (en) * | 1997-09-11 | 1999-03-17 | Siemens Aktiengesellschaft | Planar coupled coil arrangement |
| CN1241794A (en) * | 1998-07-06 | 2000-01-19 | Tdk株式会社 | Inductor device and process of production thereof |
| US6972658B1 (en) * | 2003-11-10 | 2005-12-06 | Rf Micro Devices, Inc. | Differential inductor design for high self-resonance frequency |
| CN1649087A (en) * | 2004-01-29 | 2005-08-03 | 国际商业机器公司 | Method for forming inductor and semiconductor structure |
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| CN1937207A (en) | 2007-03-28 |
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