CN100401547C - Electric device with phase change material and metod of manufacturing the same - Google Patents
Electric device with phase change material and metod of manufacturing the same Download PDFInfo
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- CN100401547C CN100401547C CNB2003801064975A CN200380106497A CN100401547C CN 100401547 C CN100401547 C CN 100401547C CN B2003801064975 A CNB2003801064975 A CN B2003801064975A CN 200380106497 A CN200380106497 A CN 200380106497A CN 100401547 C CN100401547 C CN 100401547C
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- 239000012782 phase change material Substances 0.000 title claims description 123
- 238000004519 manufacturing process Methods 0.000 title description 6
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- 239000000463 material Substances 0.000 abstract description 30
- 239000004020 conductor Substances 0.000 description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
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- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
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- 229910052757 nitrogen Inorganic materials 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- -1 and in known device Substances 0.000 description 2
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- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
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Abstract
The present invention relates to an electronic device (100), which comprises: a body (102) that contains a resistor (107) that contains a phase-changing material that can change between a first phase and a second phase. When the phase-changing material is arranged in the first phase, the resistor (107) has a first resistance; and when the phase-changing material is arranged in the second phase, the resistor (107) has a second resistance. The phase-changing material constitutes a conductive path between a first contact area and a second contact area; the cross section of the conductive path is smaller than the first contact area and the second contact area. The body (102) also has a heating element 106 that can conduct current, so as to change from the first phase to the second phase. The heating element (106) can be preferentially arranged in parallel with the resistor (107).
Description
Technical field
The present invention relates to have the electronic device of the body that comprises resistor, resistor comprises the phase-change material that can change between first phase place and second phase place, and resistor has first resistance when phase-change material is in first phase place, and resistor has second resistance that is different from first resistance when phase-change material is in second phase place.
The invention still further relates to the method for making this electronic device.
Background technology
US-5,933,365 disclose a kind of electronic device embodiment with the resistor that comprises phase-change material, phase-change material can be in first phase place, crystalline phase for example, with second phase place, amorphous phase for example, the resistor with the phase-change material that is in first phase place has different resistance values with the resistor with the phase-change material that is in second phase place.First phase place and/or second phase place can be the crystalline solid of the noncrystal of part and part.Part in this paper back, term " crystalline solid " and " noncrystal " are respectively applied for the address crystalline phase or are mainly crystalline phase and amorphous phase or be mainly amorphous phase.
Resistor is connected to first conductor and second conductor electronically, so that measured resistance value.Resistor, first conductor and second conductor can conduction currents, and this electric current changes phase-change material through adding heat energy between first phase place and second phase place.Can believe, for from having the phase place of relative good electrical conductivity, such as crystalline phase or be mainly crystalline phase, to phase place with relatively poor relatively conductivity, such as amorphous phase or be mainly the conversion of amorphous phase, melt phase-change material by enough strong current flow heats.Finish heating when cutting off electric current, phase-change material then cools off and presents more non-crystal order.
When the conversion that causes from phase place with low relatively conductance to the phase place with high relatively conductance, heating initially is subjected to the counteracting of poor conductivity, and this has limited the electric current by the phase-change material conduction.Can believe, by using sufficiently high voltage at the resistor two ends, promptly be higher than the voltage of so-called threshold voltage, just may cause the electrical breakdown in phase-change material partly, this causes high local current densities.Therefore, the temperature that corresponding heating enough is used to increase phase-change material can be carried out the conversion from the amorphous phase to the crystalline phase thus on its crystallized temperature.
Known electronic device is that electricity can be write and erasable memory cell, and it has carried information encrypted in resistance value.For example when resistance was relatively low, the memory cell assignment was " 0 ", and when resistance was higher relatively, assignment was " 1 ".This resistance can be measured by apply voltage and the corresponding electric current of measurement at the resistor two ends easily.Above-mentioned write and wipe memory element to the conversion of second phase place by causing from first phase place.
The shortcoming of known electronic device is, when repeating to switch between first phase place and second phase place, electronic device is worsened, i.e. in the life-span of electronic device, also be life cycle or be called persistence to be restricted.
Summary of the invention
An object of the present invention is to provide the good relatively persistent electronic device that has as the introductory song description.
Limit the present invention by independent claims.Dependent claims limits preferred embodiment.
According to the present invention, achieve this end and be that phase-change material constitutes the conductive path between first contact area and second contact area, the cross section of conductive path is less than first contact area and second contact area.Here, " contact area " defined phase-change material and connected area such as the electric conductor of first conductor and second conductor electronically, and electric conductor is made up of the material that is different from phase-change material, and in known device, phase-change material is arranged in an aperture.The cross section of contact area and conductive path all equals the cross section in aperture, and promptly contact area equals the cross section of conductive path.In known device, phase transformation appears in the volume of a phase-change material, and it comprises this contact area.At interface, promptly at this contact area place, the phase transformation of repetition and corresponding high current density cause material degradation, especially atomic time such as the relative activity of Te have caused the deterioration of electronic device when phase-change material comprises.In electronic device according to the present invention, the minimum cross-section of conductive path also is positioned at the inboard of phase-change material well, and unequal with contact area, and this is identical with known electronic device.Therefore, the current density of phase-change material inboard is the highest, and therefore joule heating is more effective in the phase-change material inboard.This has reduced the interaction between the other materials at first contact area of phase-change material and interface-promptly and/or the second contact area place, thereby causes the persistence improved.
In one embodiment, conductive path has the phase-change material of a volume of part formation of described cross section, this volume has greater than the resistance that electrically contacts resistance on first contact area and/or second contact area, is in first phase place or second phase-independent with phase-change material.In such electronic device, joule heating on first contact area and/or second contact area is all heated less than the joule of the high volume inboard of current density in the phase-change material, this has further reduced the interaction between the other materials at phase-change material and first contact area and/or the second contact area place, thereby causes the persistence improved.Additional advantage is that electric energy is dissipated, and has promptly mainly converted heat in the position that phase transformation occurs.Cause the desired total electric energy of phase transition by being reduced in the dissipation of the position that phase transformation do not occur, having reduced.
Preferably, the resistance of described volume is in first phase place or second phase-independent greater than the resistance that electrically contacts in first contact area and second contact area with phase-change material.In this case, suppose that phase transformation appears at this volume, this volume is positioned at the inboard of phase-change material.
Preferably, at the contact resistance of first contact area and second contact area less than 10
-7Vcm
2/ A is because first contact area is relative with the dissipation of second contact area less in this case.
In one embodiment, electronic device also comprise can conduction current to heat the heating element that promotes phase transition by joule.When causing phase transition, heat by this heating element and can more effectively utilize electric energy.If heating element and resistor are arranged in parallel, will be favourable.Electronic device with the heating element that is arranged in parallel with resistor is described in european patent application " electronic device with phase-change material and parallel heater " by same applicant, and the submission date of this application is identical with the application.Its integral body is quoted at this as a reference.In this case, further increased the persistence of electronic device, because handover operation no longer need be by greater than the caused electrical breakdown of threshold voltage according.In electronic device, even the joule heating of being undertaken by heating element also is effectively when phase-change material is in amorphous phase, because heating element and resistor are arranged in parallel according to present embodiment.When phase-change material is in amorphous phase, be applied to voltage on the resistor and cause electric current to the small part heating element of flowing through, cause effective heating of phase-change material thus and do not need electrical breakdown.Heating has promoted phase transformation like this, has improved the persistence of electronic device thus.
In one embodiment, heating element has heater element resistance RH, and it is less than first resistance and second resistance, promptly especially less than the resistance R of the resistor with the phase-change material that is in amorphous phase
R, AAs a result, when phase-change material is in non-crystal state, the electric current heating element of mainly flowing through.If heater element resistance R
HBe ten factor or compare resistance R
R, ALittler, will be very favourable.When causing that phase transition is by through the Current Control of electronic device the time, sets up: heater element resistance R below
HWith respect to resistance R
R, AMore little, the electric current of the heating element of flowing through and corresponding joule heat high more.When causing that phase transition is a voltage control by the resistor two ends, parallel heating element has can use the more advantage of low-voltage.Heater element resistance R
HWith respect to resistance R
R, AMore little, the voltage that heating element and resistance two ends require is also more little.Under lower voltage, cause that desired joule of heating of phase transformation just reaches through heating element by higher electric current.This has special advantage when electronic device is integrated in the relatively low advanced person's of voltage the IC process.Simultaneously, reduced electric current, thereby reduced the electromigration in the phase-change material, thereby caused the persistence improved through phase-change material.
Among the embodiment that describes in the paragraph, caused phase transition and the not electrical breakdown on phase-change material in front.Especially for the former phase-change material that gives that comprises such as the relative activity of Te, repeat switched phase change material by electrical breakdown and worsened electronic device.Therefore, the electronic device of having avoided electrical breakdown according to this embodiment of the invention has the persistence of improvement.
Be that electrical breakdown is a statistic processes with another shortcoming of coming handoff association by electrical breakdown.Therefore, the value of puncture voltage also is a statistical parameter, and this parameter may depend on temperature and switch the time in past from the last time.In order to guarantee reliable switching, the voltage on average threshold voltage must be applied in the known electronic device.But the voltage that can use for cmos device reduces along with the reduction of COMS size of devices.Therefore, from now on should be on relatively low voltage loading or unloading operation reliably.In electronic device according to this embodiment of the invention, do not require that electrical breakdown and the voltage below threshold voltage enough are used to cause phase transition.
Heater element resistance R
HPreferred more lower limit is greater than 0.3 times of minimum value in first resistance and second resistance, promptly greater than the resistance R of the resistor with the phase-change material that is in crystalline phase
R, C0.3 times.The electronic device that satisfies this condition have can the reliable measurements resistance variations advantage.
When resistor and heating element are parallel when being connected, the all-in resistance R of these two elements
TBy R
T=R
R* R
H/ (R
R+ R
H) provide.The resistance R of resistor
RDepend on the phase place of phase-change material, and heater element resistance R
HBe independent of the phase place of phase-change material.At heater element resistance R
HMuch smaller than resistance R
R, ASituation under, have the all-in resistance R of the phase-change material that is in amorphous phase
T, ABe approximately equal to R
H
If zoom factor k is defined as R
H=k*R
R, C, have the all-in resistance R of the phase-change material that is in crystalline phase
T, CBe R
T, C=R
R, C* k/ (k+1).All-in resistance be changed to Δ R
T=R
R, A-R
T, C≈ R
H-R
T, C=(k-k/ (k+1)) * R
R, C=R
R, C* k
2/ (k+1).In this was approximate, the relative variation of all-in resistance was Δ R
T/ R
T, C=k.The relative variation of all-in resistance is more little, measures it reliably with regard to difficult more.Testing circuit that the more little common requirement of the relative variation of all-in resistance is more perfect and/or longer Measuring Time.The inventor confirmed 0.3 promptly 30% or more variation relatively can in the relatively short time, relatively easily measure.
Preferably, zoom factor k should be between 1 and 4, i.e. 1≤k≤4 because this moment all-in resistance the detection of changes delta RT be healthy and strong relatively, and meanwhile also effective relatively by the joule heating of heating element.
If heating element directly contacts with resistor, that is very favourable, because the joule heating of heating element is effective especially at this moment.Because identical reason directly contacts if heating element has less than the volume of first contact area with the cross section of second contact area with phase-change material, will be very favourable.
In one embodiment, heating element is made up of the heating element material, and the heating element material has component X
100-(t+s)Si
sY
t, wherein t and s represent to satisfy the atomic percent of t＜0.7 and s+t＞0.3, and X comprises one or more elements of selecting from Ti and Ta, and Y comprises one or more elements of selecting from C and N.Preferably, X does not have Ti basically, because Ta is little to the specific activity Ti of phase-change material.Preferably, s is less than or equal to 0.7, otherwise the conductance of parallel heater is less relatively, thereby requires relatively large parallel heater.When phase-change material comprised Ge, being blended in when s is less than or equal to 0.7 of Ge and Si reduced.If Y comprises N, further advantage will be arranged, the former existence of giving of nitrogen and stable polycrystal structure because the heating element material has usually, promptly when heating phase-change material, the degree of polycrystal structural change is less relatively.
In one embodiment, resistor constitutes memory element, body comprises memory cell array, each memory cell comprises corresponding memory element and corresponding selector, and the grid that comprises selection wire, each memory cell can visit via the corresponding selection wire that is connected to corresponding selector respectively.Selector can comprise bipolar transistor or diode, such as the pn diode.Such electronic device is random access storage device (RAM) device, and this device is suitable as nonvolatile memory device.
In this embodiment preferably changes, selector comprises having source area, the mos field effect transistor of drain region and gate regions (MOSFET), and the selection wire grid comprises N bar first selection wire, M bar second selection wire, N and M are integer, and output line, first district that the resistor handle of each memory component is selected from the source area and the drain region of the mos field effect transistor of correspondence is connected to output line electronically, second district of the corresponding mos field effect transistor of selecting from source area and drain region and not contacting with first district is connected to one of them of N bar first selection wire electronically, and gate regions is connected to one of them of M bar second selection wire electronically.In such storage component part, by the MOSFET selection memory element that allows higher relatively service speed and relatively low operating voltage.
Manufacturing comprises step according to the method for electronic device of the present invention: the first type surface that the electronic device of making in advance with phase-change material layers is provided, and the cross section of the conductive path in the layer between minimizing first contact area and second contact area, this cross section is less than first contact area and second contact area.In manufacture process be more easily, at first form phase-change material layers, and then change its shape, thereby reduce this cross section rather than directly form layer with needed little cross section by for example layer deposition.According to the present invention, reduce the step of cross section and can before phase-change material layers touches first contact area and/or second contact area, carry out.
In an embodiment of this method, first type surface has step profile, and the step that reduces cross section comprises the anisotropic etching step, is used for forming sidewall spacer along the step profile of at least a portion.So, cross section is the cross section of sidewall spacer and is determined by the height of the thickness of phase-change material layers and step profile.Can for example dielectric material layer obtain step profile by for example depositing, it forms pattern by for example photoetching technique subsequently.In this case, the height of step profile equals the thickness of dielectric material layer.Therefore, may obtain to have fully the phase-change material layers of the cross section of determining by the thickness of these two layers, promptly for example with can be irrelevant by the minimum dimension that photoetching technique obtains.The size of cross section is usually less than 20nm and multiply by 20nm.Preferably, they are lower than 10nm and multiply by 110nm.
Description of drawings
With reference to following accompanying drawing, will illustrate further and describe according to these and other aspects of electronic device of the present invention, wherein:
Fig. 1 is the top view at an embodiment of the electronic device of making the phase I,
Fig. 2 is the cross section of the electronic device of making in advance along the II-II line of Fig. 1,
Fig. 3 is the top view at the electronic device of making in advance of making second stage,
Fig. 4 is the cross section of the electronic device of making in advance along the IV-IV line of Fig. 3,
Fig. 5 is the top view at the electronic device of making in advance of making the phase III,
Fig. 6 is the cross section of the electronic device of making in advance along the VI-VI line of Fig. 5,
Fig. 7 and Fig. 8 are respectively the top views at other embodiment that make the five-stage and the electronic device in the 6th stage,
Fig. 9 is the curve chart as the crystallization rate of the function of Sb/Te ratio.Accompanying drawing is not made in proportion.
Embodiment
As shown in the different phase of the manufacturing among Fig. 1-8, electronic device 100 has the body 102 that comprises body substrate 101, and substrate 101 comprises the semiconductor silicon wafer that monocrystalline p type for example mixes.In body 102, resistor 107 is embedded in dielectric 123 and 126, for example in the silicon dioxide.Resistor 107 is made of the phase-change material that can change between first phase place and second phase place.Resistor 107 has first resistance when phase-change material is in first phase place, and resistor 107 has second resistance that is different from first resistance when phase-change material is in second phase place.
In one embodiment, phase-change material has composition Sb
1-cM
c, wherein c satisfies 0.05≤c≤0.61, and M is one or more elements of selecting from the group of Ge, In, Ag, Ga, Te, Zn and Sn.Be 03100583.8 at application number, attorney docket is the non-electronic device of having described the phase-change material with this composition in the disclosed european patent application that shifts to an earlier date of PHNL030259, the application has required the priority of this application and it has been incorporated herein by reference as a whole.Preferably, c satisfies 0.05≤c≤0.5.More preferably, c satisfies 0.10≤c≤0.5。Favourable phase-change material group has the element M of one or more Ge of being different from and Ga, and the total concentration of Ge and Ga is less than 25 atomic percentages and/or comprise that sum is less than the Ge and/or the Ga of 30 atomic percentages.Comprise that phase-change material more than the Ge of 20 atomic percentages and Ga and one or more elements of selecting from the In of total concentration 5 to 20 atomic percentages and Sn has relative higher crystallization rate and has the relative advantages of higher stability of amorphous phase simultaneously.
In one embodiment, phase-change material is formula S b
aTe
bX
100-(a+b)Composition, wherein the atomic percentage of 1≤a/b≤8 and 4≤100-(a+b)≤22 is satisfied in a, b and 100-(a+b) expression, and X is one or more elements of selecting from the group of Ge, In, Ag, Ga and Zn.Phase-change material can be Sb for example
72Te
20Ge
8
In another embodiment again, phase-change material is formula (Te
aGe
bSb
100-(a+b))
cTM
100-cComposition, wherein subscript is an atomic percentage, a is at 70 below the percentage, b is at 5 more than the percentage 50 below the percentage, c is between 90 to 99.99 percentages, and TM represents one or more transition metals.Replacedly, can omit this transition metal, and phase-change material is formula Te
aGe
bSb
100-(a+b)Composition, wherein subscript is an atomic percentage, a is at 70 below the percentage, b is at 5 more than the percentage 50 below the percentage, for example Ge
2Sb
2Te
5Other examples of phase-change material are Te
81Ge
15S
2As
2And Te
81Ge
15S
2Sb
2
Phase-change material can deposit by sputter, as paper " Phase-change media forhigh-numerical-aperture and blue-wavelength recording " by H.JBorg et al.Japanese Journal of Applied Physical, volume 40, pages 1592-1597, described in 2001.
In the embodiment shown in Fig. 1-8, selector 171 comprises mos field effect transistor (MOSFET), is nmos pass transistor more specifically.MOSFET has n type impure source district 172, n type doping drain electrode region 173 and gate regions 174.Source area 172 and drain region 173 can comprise the n type dopant material more than a part, such as light dope n-part and more heavily doped n+ part.N type impure source district 172 and drain region 173 are separated by channel region.By 174 controls of the gate regions that on channel region, forms from source area 172 flow through channel region to the drain region 173 electric current.Gate regions 174 preferably includes polysilicon layer.Gate regions 174 is separated by gate dielectric layer and channel region.
The grid of selection wire 120,121 comprises first selection wire 120 of N=3 bar and second selection wire 121 of M=3 bar, and output line.The resistor 107 of each memory element 170 will be connected to output line from first district that source area 172 and the drain region 173 of corresponding MOSFET are selected electronically.173 that select and second districts corresponding MOSFET that do not contact with first district are connected to one of them of N bar first selection wire 120 electronically from source area 172 and drain region.Gate regions 174 is connected to one of them of M bar second selection wire 121 electronically.In the embodiment shown in Fig. 2-9, first district is a source area 172, and second district is drain region 173.In another embodiment (not shown), first district is drain region 173, and second district is a source area 172.Selection wire 120,121 is connected respectively to line options device and row selector spare.These selectors of mentioning later do not illustrate.
In the process of making electronic device 100, at first for example utilize the IC standard technology to form the array of selector 171 and the grid of selection wire 120,121.At terminals of each selector 171, in the embodiment of Fig. 1-8, source area 172 is furnished with electric conductor 124, such as tungsten plug.Selector 171, selection wire 120,121 and electric conductor 124 are by dielectric substance 123 mutually insulateds and be embedded in the dielectric substance 123, for example in the silicon dioxide, make electric conductor 124 such exposure as illustrated in fig. 1 and 2.Preferably, comprise that the surface of electric conductor 124 of exposure is polished by chemico-mechanical polishing (CMP), to obtain the surface of smooth relatively and opposed flattened.
In follow-up step, this surface is furnished with the dielectric material layer 109 such as silicon nitride or carborundum.In layer 109, opening 108 forms by the mode of for example photoetching technique, makes part such exposure as shown in Figure 4 of electric conductor 124 and the dielectric 123 adjacent with electric conductor 124.The first type surface of the thus obtained electronic device of making in advance 100 has step profile.Subsequently, the first type surface of the thus obtained electronic device of making in advance 100, promptly layer 109 and opening 108 are furnished with phase-change material layers 107 as shown in Figure 4.Be generally 5-50nm, the thickness LT of preferred general layer 107 for 15nm has determined the width of the minimum cross-section of phase-change material, and this will be described below.In one embodiment, the layer 110 such as the electric conducting material of TiN is deposited on the layer 107.Layer 110 is used to reduce electric conductor 124 and is just carrying out resistance between layer 107 the part of phase transformation.In another unshowned embodiment, omit layer 110.
On layer 107, if any, on layer 110, form mask 111 and 112 by for example photoetching technique or e beam pattern gereration.The layer 107 of each cover part of mask 111 and layer 110 (if existence), the part that is capped has covered corresponding electric conductor 124.Other parts of mask 112 cover layers 107 and layer 110 (if existence), on it will after form other electric conductor 125.For each memory element, mask 111 and 112 distance apart is L, usually less than 300nm, and preferably 20 and 200nm between.When photoetching technique was used to form mask 111 and mask 112, minimum range L preferably was approximately equal to the obtainable minimum dimension of photoetching technique.Distance L is short more, causes that the required electric energy of phase transition between first and second phase places is also just more little.Distance L has been determined the length of phase-change material, and the cross section that this phase-change material has is less than the cross section of the phase-change material on electric conductor 124, and this will be described below.Phase-change material with cross section of minimizing is called as the volume of phase-change material.
If present, the part by utilizing of layer 110 not masked 111 and 112 covering for example comprises that the isotropism selection etching of HF solution removes.The result that this stage obtained of the process of manufacturing electronic device 100 as shown in Figure 4.Note, because isotropic etching the bottom etching takes place, referring to Figure 4 and 5.Then, the part utilization of layer 107 not masked 111 and 112 covering for example comprises that the active-ion-etch of C1 is by anisotropically etching.As a result, the sidewall spacer of being made up of phase-change material forms in the inboard of the opening 108 of not masked 111 and 112 positions that cover.This infers the cross section of the conductive path in the layer 107 between second contact area that has reduced first contact area that covered by mask 111 and covered by mask 112.This cross section is less than first contact area and second contact area.For each memory element 170, the sidewall spacer that is formed by layer 107 is connected to layer 107 and layer 110 (if existence) masked 111 and 112 those parts that cover during etching step electronically.Shown in the cross section of Fig. 6, the sidewall spacer that is formed by layer 107 has the width W of the thickness LT that is substantially equal to layer 107.In other words, first type surface has the step profile that is formed by layer 109, and the step that reduces cross section comprises isotropic etch step, is used for forming sidewall spacer along the step profile of at least a portion.
After removing mask 111 and 112, obtain at the electronic device of making in advance 100 shown in the top view of Fig. 5.Each memory cell of this electronic device 100 has phase-change material layers 107, comprises by the part of mask 111 definition and the part of mask 112 definition.These two parts connect by two sidewall spacers that formed by layer 107.
In one embodiment, this method also comprises step: the layer 106 by the heating element material comes the electronic device of making in advance 100 shown in the coverage diagram 5, and the heating element 106 that formation can conduction current is so that can be from first phase transition to second phase place.Layer 106 constitutes by having the heating element material that fusing point is higher than phase-change material.The fusing point of heating element material is preferably high 100 degrees centigrade than the fusing point of phase-change material at least, and is more preferably, high at least 250 degrees centigrade.Preferably, the heating element material does not react with phase-change material.Preferably, the resistivity of heating element material 0.1 to the scope of 10cm mV/A.When phase-change material is from Te
aGe
bSb
100-(a+b)Family in select the time, wherein subscript is an atomic percentage, a is at 70 below the percentage, b is at 5 more than the percentage 50 below the percentage, phase-change material has 1 to 4cm mV/A resistivity, the resistivity of for example 2cm mV/A, and heating element material preferably 0.5 and 20cm mV/A between.When phase-change material is from Sb
1-cM
cFamily select the time, wherein c satisfies 0.05≤c≤0.61, and M is one or more elements of selecting from the group of Ge, In, Ag, Ga, Te, Zn and Sn, phase-change material has general 0.2 to the resistivity of 0.8cmmV/A, and the resistivity of heating element material preferably 0.1 and 4cm mV/A between.
In one embodiment, the heating element material has component X
100-(t+s)Si
sY
t, wherein t and s represent to satisfy the atomic percent of t＜0.7 and s+t＞0.3, and X comprises one or more elements of selecting from Ti and Ta, and Y comprises one or more elements of selecting from C and N.Preferably, X does not have Ti basically, because Ta is little to the specific activity Ti of phase-change material.Preferably, s is less than or equal to 0.7, otherwise the conductance of parallel heater is less relatively, thereby requires relatively large parallel heater.When phase-change material comprised Ge, being blended in when s is less than or equal to 0.7 of Ge and Si reduced.If Y comprises N, further advantage will be arranged, because the heating element material has usually by the stable polycrystal structure of nitrogen-atoms, promptly when heating phase-change material, the degree of polycrystal structural change is very little.The example of this family of heating element material is TaSiN, Ta
20Si
40N
40, TiSiN or Ta
20Si
40C
40Replacedly, the heating element material can be by TiN, TaSi
2, TaN
x, TiAlN, TiC, the polycrystalline silicon that TiWC or p type mix is formed, wherein x satisfies 0.3＜x＜0.7.
After the layer 106 of heating element material is provided, form mask 111 ' and 112 ', they are similar to mask 111 and 112.Then, utilization for example comprises CF
4: CHF
3Plasma etching, layer 106 is by anisotropically etchings.Shown in the cross section of Fig. 6, form sidewall spacer by layer 106 in the mode of the sidewall spacer that is similar to cambium layer 107.The sidewall spacer that is formed by layer 106 has the width V of the thickness that is substantially equal to layer 106.
In an alternative embodiment, exchange layer 107 and layer 106 promptly provided layer 106 before the top that layer 107 is provided to layer 106.In another embodiment, layer 106 may comprise that by one for example the intermediate layer of silicon dioxide separates with layer 107.And in this embodiment, heating element 106 is parallel to resistor 107.With aforesaid embodiment contrast, in this embodiment, resistor 107 does not directly contact with heating element 106.
In an alternative embodiment, before forming mask 111 and 112, provide layer 107 and layer 106.Then, layer 107 and layer 106 are not all needed to form the additional step of mask 111 ' and 112 ' by anisotropic etching.
In one embodiment, the method for making electronic device 100 may further comprise the steps, and wherein provides to have out 129 mask 128, makes for each memory cell the exposure as shown in Figure 7 of one of two sidewall spacers that formed by layer 107.In subsequent step, this mask continues on for for example removing by etching the expose portion of layer 106 and layer 107.As a result, in each memory cell, these two parts connect by the only sidewall spacer that is formed by layer 107 now.Subsequently, remove mask 128.In another embodiment, omit mask 128, and each of layer 106 and layer 107 have two sidewall spacers.
The electronic device 100 of Zhi Zuoing is furnished with dielectric layer 126, for example silicon dioxide in advance.In one embodiment, the electronic device of making in advance shown in Figure 7 then is subjected to material removal process, such as chemico-mechanical polishing, also obtains the smooth surface favourable to subsequent treatment with the height that reduces the layer 106 and the sidewall spacer of layer 107.If layer 109 is made up of two layers of different materials, harder material relatively for example, the lower level of silicon nitride for example, and have for example layer of the relative softer material of silicon dioxide thereon, will be favourable.During material removal process, relatively harder layer is used as and stops layer, layer 107 a sidewall spacer of generation with height H of good definition, and height H is preferably 10 to 100nm.After this material removal process, obtain surface 199 as shown in Figure 7.Thus obtained, layer 107 that promptly have one or two sidewall spacer forms the resistor 170 of electronic devices 100.
Then, additional dielectric layer 126 ' is provided, create opening 132 as shown in Figure 8 therein, think the layer 106 (if existence), conductive layer 110 (if existence) of each memory cell expose portion or the layer 107 that covers by mask 112 in stage early.These openings 132 are furnished with another and are used for the electric conductor of resistor contact 170 electronically.After step in, this another electric conductor is connected to output line electronically.
Thus obtained electronic device 100 has body 102, and it has resistor 170.Resistor 170 is made of the phase-change material layers 107 that can change between first phase place and second phase place.Resistor 170 has first resistance when phase-change material is in first phase place, and resistor 170 has second resistance that is different from first resistance when phase-change material is in second phase place.Body 102 also has the heating element that is formed by layer 106.This heating element can conduction current, so that can be from first phase transition to second phase place.This heating element and resistor are arranged in parallel.
Phase-change material constitutes the conductive path between first contact area and second contact area.When omitting layer 110, first contact area is the area of electric conductor 124 contact phase-change material layers 107, and referring to Fig. 1 and 4, and second contact area provides the area to another electric conductor contact phase-change material layers 107 of opening 132, referring to Fig. 8.The cross section of the conductive path that is made of phase-change material layers is less than first contact area and second contact area.When layer 110 existed, first contact area and second contact area moved to the area of layer 107 effectively from layer 110 for electric current.Because the anisotropic etching of the isotropic etching of layer 110 and layer 107, layer 110 does not have the sidewall spacer of direct contact layer 107, but certain distance is arranged, referring to Figure 4 and 5.In this case, first contact area and second contact area be still on the border by the volume of sidewall spacer definition, and greater than the cross section of sidewall spacer.
Current density in the sidewall spacer inboard is higher than the current density of first contact area and second contact area, therefore will be in phase-change material on the sidewall spacer rather than the enterprising line phase conversion of the phase-change material on first contact area and/or second contact area.
In one embodiment, layer 110 is omitted, and the volume of phase-change material with cross section of minimizing has the length L of 50nm, the height H of 20nm and the width W of 15nm.Cross section equals 300nm therefore for H multiply by W
2Equal second contact area by first contact area of electric conductor 124 definition, equal 100nm and multiply by 100nm by opening 132 definition.Therefore, each of first contact area and second contact area has 10000nm
2Size, greater than 300nm
2Cross section.Phase-change material is Sb
72Te
20Ge
8The volume of resistor of cross section with minimizing has the resistance of 800Ohm, and when phase-change material is in amorphous phase, has the resistance greater than 100kOhm when phase-change material is in crystalline phase.Electric conductor 124 and another electric conductor are made up of tungsten.Each of contact resistance in first contact area and second contact area is 100Ohm.Therefore, each resistance of the contact resistance on first contact area and second contact area less than the volume of the phase-change material of cross section with minimizing.
When phase-change material was quick growth material with 1m/s or higher crystallization rate, electronic device 100 was especially favourable.Such phase-change material comprises that formula is Sb
1-cM
cComposition, wherein c satisfies 0.05≤c≤0.61, and M is one or more elements of selecting from the group of Ge, In, Ag, Ga, Te, Zn and Sn, comprises the situation of Te for M, this phase-change material has crystallization rate v
Rc, be approximately the linear function of speed Sb/M, referring to Fig. 9.For given t switching time that wants, it is influenced by the bandwidth of selector 171, adjusts the length L and the composition of phase-change material, so that make L/ (2t) ≈ v
RcHere, the factor 2 explanation is following true, and crystallization starts from having two external end of volume of phase-change material of the cross section of minimizing.
In an alternative embodiment of the method for making electronic device 100, omit layer 109.On the electronic device of making in advance 100 shown in Figure 1, directly provide phase-change material layers 107.Then, provide electron-sensitive protective layer.With electron beam pattern is write into this protective layer.Pattern has defined the volume of phase-change material at least.In one embodiment, electron beam also writes out the pattern that is defined by last embodiment by mask 111 and 112.In an alternative embodiment, form mask 111 and 112 in the mode that is similar to the foregoing description by photoetching process, and electron beam only is used to write out the pattern of volume of phase-change material that definition has the cross section of minimizing.Back one embodiment has the relative advantage of higher of throughput, because electron beam must only be used for the less relatively part of define pattern.Afterwards, form protection and further handle other electronic device in the mode that is similar to previous embodiment.
In sum, electronic device 100 has the body 102 that comprises resistor 107, and resistor 107 comprises the phase-change material that can change between first phase place and second phase place.Resistor 107 has first resistance when phase-change material is in first phase place, and resistor 107 has second resistance that is different from first resistance when phase-change material is in second phase place.Phase-change material constitutes the conductive path between first contact area and second contact area.The cross section of conductive path is less than first contact area and second contact area.Body 102 also can have can conduction current heating element 106 so that can be from first phase transition to second phase place.This heating element 106 is arranged in parallel with resistor 107.
Should be noted that the above embodiments explanations rather than restriction the present invention, and those skilled in the art can design many interchangeable embodiment and not need to depart from the scope of claims.In the claims, any reference marker of placing between bracket all can not be understood that to limit claim.Word " comprises " other elements do not got rid of except listed in the claims or the existence of step.Word before element " one " or " one " do not get rid of the existence of a plurality of such elements.
Claims (10)
1. electronic device (100) with the body (102) that comprises resistor (107), resistor (107) comprises the phase-change material that can change between first phase place and second phase place, resistor when phase-change material is in first phase place (107) has first resistance, and resistor when phase-change material is in second phase place (107) has second resistance that is different from first resistance, phase-change material constitutes the conductive path between first contact area and second contact area, the cross section of conductive path is less than first contact area and second contact area, also comprise can conduction current heating element (106), so that can be from first phase transition to second phase place, wherein, heating element (106) has the heater element resistance less than first resistance and second resistance.
2. electronic device as claimed in claim 1 (100), wherein, heating element (106) is arranged in parallel with resistor (107).
3. electronic device as claimed in claim 1 (100), wherein, conductive path has the phase-change material of a volume of part formation of described cross section, the resistance of this volume is in first phase place or second phase-independent greater than the resistance that electrically contacts on first contact area and/or second contact area with phase-change material.
4. as each described electronic device (100) among the claim 1-3, wherein, heater element resistance is greater than 0.3 times of the minimum value in first resistance and second resistance.
5. electronic device as claimed in claim 1 (100), wherein, heating element (106) directly contacts with resistor (107).
6. electronic device as claimed in claim 1 (100), wherein, resistor (107) constitutes memory element (170), and body (102) comprising:
Memory cell array, each memory cell comprise corresponding memory element (170) and corresponding selector (171) and
The grid of selection wire (120,121), each memory cell can visit via the corresponding selection wire that is connected to corresponding selector (171) (120,121) respectively.
7. electronic device as claimed in claim 6 (100), wherein:
Selector (171) comprises the mos field effect transistor of have source area (172), drain region (173) and gate regions (174), and
The grid of selection wire (120,121) comprises N bar first selection wire (120), M bar second selection wire (121), and an output line,
The resistor (107) of each memory component (170) is connected to output line electronically to first district of selecting from source area (172) and drain region (173) of the mos field effect transistor of correspondence, second district of the corresponding mos field effect transistor of selecting from source area (172) and drain region (173) and not contacting with first district is connected to one of them of N bar first selection wire (120) electronically, and gate regions (174) is connected to one of them of M bar second selection wire (121) electronically.
8. make the method for electronic device as claimed in claim 1 (100), comprise step:
The have phase-change material layers first type surface of the electronic device of making in advance (100) of (107) is provided, and
Reduce the cross section of the conductive path in the layer (107) between first contact area and second contact area, this cross section is less than first contact area and second contact area.
9. method as claimed in claim 8, wherein, first type surface has step profile, and the step that reduces cross section comprises the step of isotropic etching, is used for forming sidewall spacer along the step profile of at least a portion.
10. method as claimed in claim 8, wherein, conductive path has the phase-change material of a volume of part formation of described cross section, and the step of minimizing cross section comprises substep:
Provide electron-sensitive protective layer,
With electron beam pattern is write into this protective layer, this pattern has defined the volume of phase-change material at least, and
Form protection.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02080430 | 2002-12-19 | ||
| EP02080430.8 | 2002-12-19 | ||
| EP03100583.8 | 2003-03-07 | ||
| EP03103338.4 | 2003-09-10 |
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| Publication Number | Publication Date |
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| CN1726602A CN1726602A (en) | 2006-01-25 |
| CN100401547C true CN100401547C (en) | 2008-07-09 |
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ID=35925192
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003801071076A Expired - Fee Related CN100521277C (en) | 2002-12-19 | 2003-12-03 | Electric device comprising phase change material |
| CNB2003801064975A Expired - Fee Related CN100401547C (en) | 2002-12-19 | 2003-12-05 | Electric device with phase change material and metod of manufacturing the same |
| CNB2003801066260A Expired - Fee Related CN100533755C (en) | 2002-12-19 | 2003-12-05 | Electric device with phase change material and parallel heater |
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| CNB2003801071076A Expired - Fee Related CN100521277C (en) | 2002-12-19 | 2003-12-03 | Electric device comprising phase change material |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2003801066260A Expired - Fee Related CN100533755C (en) | 2002-12-19 | 2003-12-05 | Electric device with phase change material and parallel heater |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7800092B2 (en) * | 2006-08-15 | 2010-09-21 | Micron Technology, Inc. | Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using |
| CN100461485C (en) * | 2007-01-17 | 2009-02-11 | 中国科学院上海微系统与信息技术研究所 | Current-limiting device based on sulfur series compound phase-change material and method for making the same |
| EP2132797B1 (en) | 2007-03-30 | 2013-02-27 | Nxp B.V. | An electronic device, and a method of operating an electronic device |
| US8470635B2 (en) * | 2009-11-30 | 2013-06-25 | Micron Technology, Inc. | Keyhole-free sloped heater for phase change memory |
| CN101807665B (en) * | 2010-03-04 | 2012-07-25 | 同济大学 | Crystallization temperature-adjustable Ga30Sb70/Sb80Te20 nano composite multi-layer phase-change thin-film material |
| CN102544355B (en) * | 2010-12-09 | 2014-12-24 | 中国科学院上海微系统与信息技术研究所 | Phase-change storage material and preparation method thereof as well as storage device provided therewith and preparation method thereof |
| CN102227015B (en) * | 2011-05-24 | 2015-07-01 | 中国科学院上海微系统与信息技术研究所 | Phase transition storage material and preparation method thereof |
| CN102339951B (en) * | 2011-06-15 | 2016-01-20 | 中国科学院上海微系统与信息技术研究所 | A kind of DRAM phase-change memory cell and the phase transition storage for alternative DRAM |
| GB2515568B (en) * | 2013-06-28 | 2016-05-18 | Ibm | Resistive random-access memory cells |
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- 2003-12-03 CN CNB2003801071076A patent/CN100521277C/en not_active Expired - Fee Related
- 2003-12-05 CN CNB2003801064975A patent/CN100401547C/en not_active Expired - Fee Related
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| CN1064366A (en) * | 1991-01-18 | 1992-09-09 | 能源变换设备有限公司 | Electrically erasable phase change memory |
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Also Published As
| Publication number | Publication date |
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| CN100521277C (en) | 2009-07-29 |
| CN1726602A (en) | 2006-01-25 |
| CN1729575A (en) | 2006-02-01 |
| CN100533755C (en) | 2009-08-26 |
| CN1729583A (en) | 2006-02-01 |
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