CA2597697C - Package design for producing white light with short-wavelength leds and down-conversion materials - Google Patents

Package design for producing white light with short-wavelength leds and down-conversion materials Download PDF

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CA2597697C
CA2597697C CA2597697A CA2597697A CA2597697C CA 2597697 C CA2597697 C CA 2597697C CA 2597697 A CA2597697 A CA 2597697A CA 2597697 A CA2597697 A CA 2597697A CA 2597697 C CA2597697 C CA 2597697C
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light
wavelength
short wavelength
quantum dot
broad bandwidth
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CA2597697A1 (en
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Nadarajah Narendran
Yimin Gu
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Rensselaer Polytechnic Institute
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Rensselaer Polytechnic Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
    • C09K11/592—Chalcogenides
    • C09K11/595—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
    • C09K11/641—Chalcogenides
    • C09K11/642—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7777—Phosphates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

A broad bandwidth light source including: a solid state light emitting device (102) that generates short wavelength light; and quantum dot material (104) and phosphor material (106) that are each irradiated by some of the short wavelength light. The short wavelength light has a spectrum with a first peak wavelength shorter than about 500nm. The quantum dot material (104) absorbs some of the short wavelength light and reemits it as long wavelength light having a spectrum with a second peak wavelength longer than about 600nm. The phosphor material (106) absorbs some of the short wavelength light and reemits it as mid wavelength light having a spectrum with a peak wavelength between the first and second peak wavelengths. The light source is configured such that some of each light (short, mid, and long wavelength) is emitted coincidently as a light having a chromaticity value near the blackbody locus and a color rendering index greater than 80.

Description

PACKAGE DESIGN FOR PRODUCING WHITE LIGHT WITH SHORT-WAVELENGTH LEDS AND
DOWN-CONVERSION MATERIALS
FIELD OF THE INVENTION
[0001] The present invention concerns solid-state white light emitting devices.
In particular, these devices and methods use a short wavelength light source with both phosphor and quantum dot down conversion materials.
BACKGROUND OF THE INVENTION
[0002] Solid state light emitting devices, inclUding solid state lamps having light emitting diodes (LED's) and resonant cavity LED's (RCLED's) are extremely useful, because they potentially offer lower fabrication costs and long term durability benefits over conventional incandescent and fluorescent lamps. Due to their long operation (bum) time and low power consumption, solid state light emitting devices frequently provide a functional cost benefit, even when their initial cost is greater than that of conventional lamps. Because large scale semiconductor manufacturing techniques may be used, many solid state lamps may be produced at extremely low cost.
[0003] In addition to applications such as indicator lights on home and consumer appliances, audiovisual equipment, telecommunication devices and automotive instrument markings, LED's have found considerable application in indoor and outdoor informational displays.
[0004] With the development of efficient LED's that emit blue or ultraviolet (UV) light, it became feasible to produce LED's that generate white light through phosphor conversion of a portion of the primary emission of the LED to longer wavelengths.
Conversion of primary emissions of the LED to longer wavelengths is commonly referred to as down-conversion of the primary emission. An unconverted portion of the primary emission combines with the light of longer wavelength to produce light that may appear white to a viewer. However, using only inorganic phosphors to down-convert short wavelength light, the types of spectra that may be produced efficiently are limited.

, , SUMMARY OF THE INVENTION
[00051 An exemplary embodiment of the present invention is a method of producing visible light having a chromaticity value near a blackbody locus and a color rendering index greater than about 80, the visible light produced using a short wavelength solid state light emitting device, a quantum dot material and a phosphor material spaced apart from the quantum dot material, the method comprising a) generating short wavelength light having a first spectrum with a first peak wavelength using the short wavelength solid state light emitting device, the first peak wavelength being shorter than about 500nm; b) irradiating the quantum dot material or the spaced apart phosphor material with at least a portion of the short wavelength light such that a first fraction of the short wavelength light is absorbed and reemitted by the quantum dot material or the spaced apart phosphor material as longer wavelength light having a second spectrum with a second peak wavelength, the second peak wavelength being longer than the first peak wavelength; c) irradiating another of the quantum dot material or the spaced apart phosphor material with at least another portion of the short wavelength light such that a second fraction of the short wavelength light is absorbed and reemitted by the other of the quantum dot material or the spaced apart phosphor material as light having a third spectrum with a third peak wavelength, the third peak wavelength being either between the first peak wavelength and the second peak wavelength or longer than the second peak wavelength; and d) emitting a third fraction of the short wavelength light and combining the third fraction of the short wavelength light with at least a portion of the second wavelength light, and at least a portion of the third wavelength light as the visible light.
[0006] Another exemplary embodiment of the present invention is a broad bandwidth light source comprising a short wavelength solid state light emitting device to generate short wavelength light having a first spectrum with a first peak wavelength, the first peak wavelength being shorter than about 500nnn; a quantum dot material and a phosphor material optically coupled to the short wavelength solid state light emitting device, the quantum dot material or the phosphor material to be irradiated by a first portion of the short wavelength light, the quantum dot material or the phosphor material adapted to absorb a first fraction of incident light having the first spectrum and to reemit the absorbed light as longer wavelength light having a second spectrum with a second peak wavelength, the second peak wavelength being longer than the first peak wavelength; and another of the quantum dot material or the phosphor material to be irradiated by a second portion of the short wavelength light, the other of the quantum dot material or the phosphor material adapted to absorb a second fraction of incident light having the first spectrum and to reemit the absorbed light as light having a third spectrum with a third peak wavelength, the third peak wavelength being either between the first peak wavelength and the second peak wavelength or longer than the second peak wavelength, wherein the short wavelength solid state light emitting device, the quantum dot material, and the phosphor material are configured such that a first amount of the short wavelength light, a second amount of the longer wavelength light, and a third amount of the third wavelength light are emitted substantially coincidently from the broad bandwidth light source as a visible light having a chromaticity value near a blackbody locus and a color rendering index greater than 80;
and further comprising an optical element optically coupled to the quantum dot material and the phosphor material for controlling back coupling of light from the quantum dot material and the phosphor material into the short wavelength solid state light emitting device.
[0007] A further exemplary embodiment of the present invention is a broad bandwidth light source for producing visible light having a chromaticity value near a blackbody locus and a color rendering index greater than about 80, the broad bandwidth light source comprising means for generating short wavelength light having a first spectrum with a first peak wavelength, the first peak wavelength being shorter than about 500nm; means for absorbing and reemitting a first fraction of the short wavelength light as longer wavelength light having a second spectrum with a second peak wavelength, the second peak wavelength being longer than the first peak wavelength; and means for absorbing and reemitting a second fraction of the short wavelength light as light having a third spectrum with a third peak wavelength, the third peak wavelength being either between the first peak wavelength and the second peak wavelength or longer than the second peak wavelength, wherein a third fraction of the short wavelength light, at least a portion of the longer wavelength light, and at least a portion of the light having the third spectrum are emitted as the visible light;
and further comprising an optical element optically coupled to the means for absorbing and reemitting the first fraction of the short wavelength light and to the means for absorbing and reemitting the second fraction of the short wavelength light for controlling back coupling of light from the means for absorbing and reemitting the first fraction of the short wavelength light and the means for absorbing and reemitting the second fraction of the short wavelength light into the means for generating short wavelength light.
[0007a] A further exemplary embodiment of the present invention is a broad bandwidth light source comprising a short wavelength solid state light emitting device to generate short wavelength light having a first spectrum with a first peak wavelength, the first peak wavelength being shorter than about 500nm; a quantum dot material - 3a -having a plurality of quantum dots and a phosphor material having a plurality of phosphor particles, the plurality of quantum dots and the plurality of phosphor particles being optically coupled to the short wavelength solid state light emitting device to be irradiated by a first portion of the short wavelength light and mixedly dispersed within a matrix material that is substantially transmisive to visible light, the mixedly dispersed plurality of quantum dots and plurality of phosphor materials adapted to absorb a first fraction of incident light having the first spectrum and reemit the absorbed light as mid wavelength light and long wavelength light, wherein the mid wavelength light and the long wavelength light combine with a second fraction of incident light that is transmitted through the mixedly dispersed plurality of quantum dots and plurality of phosphor particles to produce broad bandwidth light as a visible light as visible light;
and an optical element optically coupled to the mixedly dispersed plurality of quantum dots and plurality of phosphor particles for controlling back coupling of light from the mixedly dispersed plurality of quantum dots and plurality of phosphor particles into the short wavelength solid state light emitting device.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] The invention is best understood from the following detailed description when read in connection with the accompanying drawings. It is emphasized that, according to common practice, the various features of the drawings are not to scale.
On the contrary, the dimensions of the various features are arbitrarily expanded or reduced for clarity. Included in the drawing are the following figures:
[0009] Figure 1 is a cut away side plan drawings illustrating an exemplary broad bandwidth light source according to an exemplary embodiment of the present invention;
[0010] Figure 2 is a graph illustrating exemplary spectra of a blue light emitting diode, a yellow/green phosphor material, and a red quantum dot (QD) material;
[0011] Figure 3A is a graph illustrating the spectrum of an exemplary broad bandwidth light source according to an exemplary embodiment of the present invention;
[0012] Figure 3B is a CIE-1931 diagram illustrating the color characteristics of an exemplary broad bandwidth light source according to an exemplary embodiment of the present invention;

[0013] Figure 4 is a cut away side plan drawing illustrating another exemplary broad bandwidth light source according to an exemplary embodiment of the present invention;
[0014] Figure 5 is a cut away side plan drawing illustrating a further exemplary broad bandwidth light source according to an exemplary embodiment of the present invention;
[0015] Figure 6 is a flowchart illustrating an exemplary method of producing visible light having a chromaticity value near a blackbody locus and a color rendering index greater than about 80 according to an exemplary embodiment of the present io invention;
[0016] Figures 7A and Mare schematic block diagrams illustrating exemplary methods of producing visible light using a short wavelength solid state light emitting device, a QD material, and a phosphor material according to an exemplary embodiment of the present invention; and [0017] Figure 7C is a schematic block diagram illustrating an exemplary method of producing visible light using a short wavelength solid state light emitting device and a combined QD/phosphor material according to an exemplary embodiment of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
[0018] Research into solid-state lighting aims not only to develop energy efficient light sources, but also light sources capable of emitting white light that mimics a sunlight spectrum. However, it has been difficult to achieve this type of spectrum efficiently using only inorganic phosphors to down-convert short wavelength light. For example, white LED's using a cerium doped yttrium aluminum garnet (YAG:Ce) phosphor with a gallium nitride (GaN) based blue LED have been produced. In these prior art light sources, a portion of the blue radiation emitted by the GaN
LED is down-converted to the green-yellow range by the phosphor. The combined light that results is perceived as white by the human visual system. However, this method has a drawback in that the light produced has a spectrum with a very high correlated color temperature (CCT) and may have poor color rendering properties, especially in the red region. For white LED's to be able to compete with traditional light sources, it is desirable for the spectral power distribution (SPD) to be improved.
[0019] Quantum dots (QD's) are nanometer size semiconductors that have the property of absorbing energy in one spectral range and emitting energy in another spectral range. One of the unique features of QD's that may make them interesting in solid-state lighting applications is that the absorption and emission spectra of a QD are related to the average physical size of the QD particle. Therefore, by controlling the diameters of the QD's in a material, theoretically, a material that may produce a tailored, continuous emission spectrum from a narrow bandwidth source may be achieved.
[0020] Cadmium selenide-based (CdSe) QD's can be tuned to emit radiation across the entire visible spectrum range (380nnn to 780 nm). Therefore, it is contemplated that CdSe-based QD's are a potential down-conversion material for use in white LED applications. Because the peak wavelength of the emission spectrum of QD's is proportional to their average diameters, it may be possible to combine QD's of different diameters to produce an almost continuous spectrum white light when excited by an ultraviolet or blue LED.
[0021] The inventors have tested solid state lighting devices in which red CdSe quantum dots (QD's) (620nm) have been layered around a blue GaN LED. These tests produced a light source with an output color that is purplish blue and a low luminous efficacy. These results are caused by the lack of output energy by these devices in the green-yellow spectral region.
[0022] For general illumination applications, it is almost always desirable to have a light source with a chromaticity near the blackbody locus. The chromaticity of these experimental solid state lighting devices may be improved by adding a certain amount of green QD's to the package. However, it has been found that green QD's have low quantum yields and high self-absorption ratios. Thus, adding green QD's to these experimental light sources may move the chromaticity value of the output light close to the blackbody locus, but the associated quantum yields and self-absorption ratios may greatly decrease package efficiency.
[0023] Exemplary embodiments of the present invention include devices and methods to produce white light that may mimic sunlight using light emitting diodes (LED's) and down-conversion materials. These exemplary embodiments use high efficiency red QD's and yellow-green phosphor as down-conversion materials.
Hence, the package luminous efficacy may be increased while maintaining the desired chromaticity value.
[0024] Figure 1 illustrates exemplary broad bandwidth light source according to an exemplary embodiment of the present invention. Exemplary broad bandwidth light source 100 includes: short wavelength solid state light emitting device 102 to generate short wavelength light; QD material 104; and phosphor material 106, all of which are mounted on optical mount 108. Optical mount 108 provides mechanical support and may also act as a heat sink to help dissipate heat generated by the short wavelength solid state light emitting device 102 and the down-conversion materials. Optical mount 108 may also have a reflective coating to increase emission of the visible light out of the top surface of exemplary broad bandwidth light source 100. It is noted that, although the positions of QD material 104 and phosphor material 106 shown in Figure 1 may be desirable, other configurations of these two material layers may be used in exemplary embodiments of the present invention. For example, the positions of QD material 104 and phosphor material 106 may be exchanged in the exemplary embodiment of Figure 1.
[0025] Exemplary broad bandwidth light source 100 addresses the lack of green-yellow light in the spectrum of the experimental solid state light source described above by creating a packaging concept that couples both red QD's and yellow-green phosphor as down-conversion materials with a solid state blue or UV light source. As shown in Figure 1, short wavelength solid state light emitting device 102 may be embedded within QD material 104 and phosphor material 106 may be layered on top the QD
material layer.
[0026] Figures 7A-C schematically illustrate operation of exemplary broad bandwidth light sources. For simplicity of illustration all photons (arrows) are shown propagating forward. One skilled in the art will understand, however, that down-converted photons may be radiated in all directions and the photons of short wavelength solid state light emitting device 102 may not be collimated as shown in Figures 7A-C. In Figures 7A-C, short wavelength photons are represented by arrows marked B, mid wavelength photons are represented by arrows marked G and long wavelength photons are represented by arrows marked R. In all three Figures, photons 700 represent the short wavelength photons generated by short wavelength solid state light emitting device 102.
[0027] In the exemplary embodiment of Figure 7A, photons 700 are incident on phosphor material 106 and some of them are absorbed by phosphor material 106 and reemitted as mid wavelength photons. Photons 702 include non-absorbed, short wavelength photons (B) that are transmitted through phosphor material 106 and emitted mid wavelength photons (G). Photons 702 are incident on QD material 104.
Some of remaining short wavelength photons and some of the mid wavelength photons are absorbed by QD material 104 and reemitted as long wavelength photons. The remaining short wavelength photons and the remaining mid wavelength photons (G) are transmitted through phosphor material 106 and combine with the emitted long wavelength photons (R) to produce broad bandwidth light 704.
[0028]
In the exemplary embodiment of Figure 7B, photons 700 are incident on QD material 104 and some of them are absorbed by QD material 104 and reemitted as long wavelength photons. The remaining short wavelength photons are transmitted through QD material 104. Photons 706 include non-absorbed, short wavelength photons (B) that are transmitted through QD material 104 and emitted long wavelength photons (R). Photons 706 are incident on phosphor material 106. Some of remaining short wavelength photons are absorbed by phosphor material 106 and reemitted as mid wavelength photons. The remaining short wavelength photons (B) and the long wavelength photons (R) are transmitted through phosphor material 106 and combine with the emitted mid wavelength photons (G) to produce broad bandwidth light 704.
[0029]
In the exemplary embodiment of Figure 7C, photons 700 are incident on combined QD/phosphor material 402 and some of them are absorbed by combined QD/phosphor material 402 and reemitted as mid wavelength photons and long wavelength photons. The remaining short wavelength photons (B) are transmitted through combined QD/phosphor material 402 and combine with the emitted mid wavelength photons (G) and the long wavelength photons (R) to produce broad bandwidth light 704.
[0030] Thus, in all three illustrated embodiments, part of the short wavelength light from short wavelength solid state light emitting device 102 is absorbed by both the QD's in QD maierial 104 and the phosphor in phosphor material 106 (or in combined QD/phosphor material 402), which absorb the short wavelength light and reemit (i.e. down-convert) it as red and green-yellow light, respectively.
Therefore, exemplary broad bandwidth light source 100 may produce an almost continuous spectrum of visible light. As a result, both the chromaticity value and luminous efficacy of exemplary broad bandwidth light source 100 may be improved.
[0031]
Other benefits of this broad bandwidth light source design may include:
increasing the color rendering index (CRI) of the output light; lowering the correlated color temperature (CCT) of the output light; and increasing the efficiency of the device.
[0032] Figure 2 illustrates spectral graph 200, which includes three spectra.
Spectrum 202 represents the spectrum of the short wavelength light generated by an exemplary short wavelength solid state light emitting device 102. Spectrum 204 represents the spectrum of the mid wavelength light emitted by an exemplary phosphor material 106. Spectrum 206 represents the spectrum of the long wavelength light emitted by an exemplary QD material 104. By properly configuring short wavelength solid state light emitting device 102, QD material 104, and phosphor material 106, the relative amounts of light from each of these spectra may be controlled to produce a visible light with desired optical properties such as chromaticity, CRI, and CCT.
Spectral graph 300 in Figure 3A illustrates exemplary combined spectrum 302 that may be produced in this manner.
[0033] By varying the relative contributions of spectrum 202, spectrum 204, and spectrum 206 to the visible light emitted by exemplary broad bandwidth light source 100, the chromaticity value of the emitted light may be changed. The chromaticity value of the emitted light may also be changed by choosing a short wavelength solid state light emitting device, a QD material, and/or a phosphor material that have different spectra than those shown in Figure 2. As noted above, a chromaticity near the black body locus has been found to be most natural to people and, thus, preferred for lighting designs. Figure 3B shows CIE-1931 diagram 304 on which spectrum locus 306, black body locus 308, and chromaticity value 310 of exemplary combined spectrum 302 shown in Figure 3A have been plotted. As may be seen in Figure 3B, chromaticity value 310 of exemplary combined spectrum 302 shown in Figure 3A
is very near to black body locus 308. Proper selection and configuration of short wavelength solid state light emitting device 102, QD material 104, and phosphor material 106 may allow the chromaticity value of the visible light emitted from broad bandwidth light source 100 to be desirably set within an area bounded by about .01 of the x chromaticity value and about .01 of the y chromaticity value of the blackbody locus on a CIE-1931 diagram.
[0034] CRI is a figure of merit, on a scale of 0 to 100, used by manufacturers of fluorescent, metal halide and other nonincandescent lighting equipment to describe the visual effect of the light on colored surfaces. Natural daylight and any light source approximating a blackbody source (see color temperature) are assigned a CRI of 100.
In a daylighting context, the CRI defines the spectral transmissive quality of glasses or other transparent materials. In this case, values of 95 or better are considered acceptable for allowing true color rendering. Typical cool white fluorescent lamps have a CRI of approximately 62. Fluorescent lamps having rare-earth phosphors have achieved CRI's of 80 and above. The CRI of a typical white LED based on a blue LED
and YAG phosphor is between 70 and 78. Proper selection and configuration of short wavelength solid state light emitting device 102, QD material 104, and phosphor material 106 may allow the CRI of the visible light emitted from broad bandwidth light source 100 to be desirably set to be greater than about 85 or even greater than about 90.
[0035] Short wavelength solid state light emitting device 102 generates short wavelength light that desirably has a peak wavelength shorter than about 500nm, for example between about 200nm and about 500nm.
[0036] The solid state light emitting device may be a light emitting diode (LED), a resonant cavity LED, or a diode laser. Examples of materials from which these devices may be formed include: InGaN; GaN; SiC; GaN on a SIC, and other semiconductor materials.
[0037] QD material 104 is optically coupled to short wavelength solid state light emitting device 102 so that it may be irradiated by a portion of the short wavelength light. In Figure 1, QD material 104 is shown to surround short wavelength solid state light emitting device 102. One skilled in the art will understand that this is not necessary, however, as long as QD material 104 is sufficiently irradiated with the short wavelength light. Providing space between QD material 104 and short wavelength solid state light emitting device 102 may be desirable to reduce optical coupling of short wavelength light emitted by QD material 104 into short wavelength solid state light emitting device 102. Such 'back coupling' of longer wavelength light may lead to undesirable heating of short wavelength solid state light emitting device 102.
[0038] QD material 104 is adapted to absorb a fraction of incident short wavelength light and to reennit the absorbed light as long wavelength light having a peak wavelength that is longer than about 600nm, for example between about 600nm and about 700nm. The full width half maximum (FWHW) of the spectrum of the long wavelength light emitted by QD material 104 may be less than about 50nm, although in some applications a broader spectrum of long wavelength light may be desirable. A
broader spectrum of long wavelength light may be particularly desirable if a component of infrared light is to be added to the visible. It is noted that a small contribution of infrared light to visible light has been found to have beneficial psychological and physical effects for some people.
[0039] QD material 104 includes a large number of QD's that are dispersed within a matrix material. This matrix material is desirably substantially transmissive to the visible light being produced by broad bandwidth light source 100. For example, the matrix material may include: UV curable clear resin; thermal curable sol-gel resin; UV
curable sol-gel resin; polycarbonate; polystyrene; polymethyl methacrylate (PMMA);
polyethylene; various epoxies; silicones; silica; or titania.
[0040] The QD's typically have a diameter in range of about 1.9nm to about 10.0nm, although this range is not limiting, and may be formed of any standard QD
material, such as CdSe, ZnS, PbSe, CdTe, PbTe, ZnSe, Si, or Ge, among others.
[0041] Phosphor material 106 is adapted to absorb a fraction of incident short wavelength light and to reemit the absorbed light as a mid wavelength light having a peak wavelength between the peak wavelength of the short wavelength light and the peak wavelength of the long wavelength light, often desirably between about 500nm and about 600nm. The full width half maximum of the spectrum of the mid wavelength light emitted by phosphor material 106 may be less than about 150nm, depending on the specific phosphor used.
[0042] Phosphor material 106 may includes a large number of phosphor particles that are dispersed within a matrix material. As with the matrix material of QD
material 104, this matrix material is desirably substantially transmissive to the visible light being produced by broad bandwidth light source 100 and may include, for example: UV curable clear resin; thermal curable sol-gel resin; UV curable sol-gel resin; polycarbonate; polystyrene; polymethyl methacrylate (PMMA);
polyethylene;
various epoxies; silicones; silica; or titania. Alternatively, phosphor material 106 may be a bulk phosphor material, possibly formed into a flat substrate as shown in Figure 1.
[0043] The phosphor particles or the bulk phosphor material may include at least one standard yellow or green phosphor, such as: ZnS:Cu-Al; ZnSiO4:Mn2+;
Sr3S105:Eu2+; BaMgA110017:Eu2+Mn2+; SrA104:Eu,Dy; (YGdCe)3A15012:Eu;
Sr4A114025:Eu;
(Ce, Tb)MgAl11019; or (La, Ce, Tb)PO4, YAG:Ce, or other phosphors.
[0044] Exemplary broad bandwidth light source 100 illustrated in Figure 1 is configured such that the short wavelength light with which phosphor material 106 is irradiated has first been transmitted through QD material 104 before it is incident on the phosphor material. Although it is contemplated that the positions of QD
material 104 and phosphor material 106 may be reversed, the configuration shown in Figure 1 may provide an advantage. As noted above, 'back coupling' of light into short wavelength solid state light emitting device 102 may lead to undesirable heating. If QD material 104 is adapted to absorb and reemit a fraction of the incident mid wavelength light as well as a fraction of the short wavelength light, the configuration shown in Figure 1 may desirably reduce the amount of mid wavelength light that is back coupled into short wavelength solid state light emitting device 102.
[0045] Figures 4 and 5 illustrate alternative exemplary broad bandwidth light sources 400 and 500, respectively. Each of these alternative exemplary broad bandwidth light sources includes a combined QD/phosphor material. This combined QD/phosphor material includes a plurality of QD's and a plurality of phosphor particles that are dispersed within a matrix material that is substantially transmissive to the visible light of the exemplary broad bandwidth light source. The QD's and the phosphor particles may be dispersed separately in specific regions of the matrix material, or they may be mixedly dispersed within the matrix material.
[0046] Figure 4 illustrates exemplary broad bandwidth light source 400 in which combined QD/phosphor material 402 is formed surrounding short wavelength solid state light emitting device 102. Figure 5 illustrates exemplary broad bandwidth light source 500 in which combined QD/phosphor material 502 is formed on the surface of optical element 504. Optical element 504 may desirably be a light guide that may help to reduce back coupling of mid and long wavelength light from combined QD/phosphor material 502 into short wavelength solid state light emitting device 102.
[0047] An exemplary broad bandwidth light source according to the exemplary embodiment of Figure 1 was formed using a GaN-based bare blue LED device as short wavelength solid state light emitting device 102. This blue LED was immersed in a layer of red QD's that had a peak emission wavelength of 630nm (QD material 104) and a YAG yellow/green phosphor layer (phosphor material 106) was placed in front of the LED and QD material. Measurements of this exemplary device show that the package luminous efficacy was 21Im/W, which is close to that of a corresponding commercially available white LED device which uses a phosphor only down conversion material (23Im/W). However, the exemplary broad bandwidth light source, which produced the exemplary data shown in Figures 3A and 3B, had a CRI of 90 with a chromaticity value close to the blackbody locus. Thus, the inventors were able to demonstrate an exemplary broad bandwidth light source according to an exemplary embodiment of the present invention that achieves superior color quality with a minimal reduction of luminous efficacy.
[0048] Figure 6 illustrates an exemplary method of producing visible light using a short wavelength solid state light emitting device, a QD material, and a phosphor material. The visible light produced by this exemplary method has a chromaticity value near the blackbody locus and a CRI greater than about 80. This method may desirably use any of the exemplary broad bandwidth light sources described above with reference to Figures 1, 4, or 5.
[0049] Short wavelength light is generated using the short wavelength solid state light emitting device, step 600. The short wavelength light has a first spectrum with a peak wavelength that is desirably shorter than about 500nm.
[0050] The QD material is irradiated with at least a portion of the short wavelength light such that a fraction of the short wavelength light is absorbed and reemitted by the QD material as long wavelength light, step 602. The long wavelength light has a second spectrum with a peak wavelength which is desirably longer than about 600nm.
[0051] The phosphor material is also irradiated with at least a portion of the short wavelength light such that a fraction of the short wavelength light is absorbed and reemitted by the phosphor material as mid wavelength light, step 604. The mid wavelength light has a third spectrum with a peak wavelength between the peak io wavelengths of the short wavelength light and the long wavelength light.
[0052] A remainder of the short wavelength light, at least a portion of the mid wavelength light, and at least a portion of the long wavelength light are emitted from the as exemplary broad bandwidth light source the visible light, step 606.
[0053]
Alternatively, the QD material may be irradiated with at least a portion of the mid wavelength light in addition to the short wavelength light. A
fraction of the mid wavelength light may be absorbed and reemitted by the QD material as additional long wavelength light, step 608.
[0054] Although the invention is illustrated and described herein with reference to specific embodiments, it is not intended to be limited to the details shown. Rather, various modifications may be made in the details within the scope and range of equivalents of the claims and without departing from the invention. In particular, one skilled in the art may understand that many features of the various specifically illustrated embodiments may be mixed to form additional exemplary broad bandwidth light sources and methods also embodied by the present invention.

Claims (37)

1. A method of producing visible light having a chromaticity value near a blackbody locus and a color rendering index greater than about 80, the visible light produced using a short wavelength solid state light emitting device, a quantum dot material and a phosphor material spaced apart from the quantum dot material, the method comprising:
a) generating short wavelength light having a first spectrum with a first peak wavelength using the short wavelength solid state light emitting device, the first peak wavelength being shorter than about 500nm;
b) irradiating the quantum dot material or the spaced apart phosphor material with at least a portion of the short wavelength light such that a first fraction of the short wavelength light is absorbed and reemitted by the quantum dot material or the spaced apart phosphor material as longer wavelength light having a second spectrum with a second peak wavelength, the second peak wavelength being longer than the first peak wavelength;
c) irradiating another of the quantum dot material or the spaced apart phosphor material with at least another portion of the short wavelength light such that a second fraction of the short wavelength light is absorbed and reemitted by the other of the quantum dot material or the spaced apart phosphor material as light having a third spectrum with a third peak wavelength, the third peak wavelength being either between the first peak wavelength and the second peak wavelength or longer than the second peak wavelength; and d) emitting a third fraction of the short wavelength light and combining the third fraction of the short wavelength light with at least a portion of the second wavelength light, and at least a portion of the third wavelength light as the visible light.
2. A method according to claim 1, wherein the chromaticity value of the visible light emitted in step (d) is within an area bounded by about .01 of an x chromaticity value and about .01 of a y chromaticity value of the blackbody locus on a CIE-1931 diagram.
3. A method according to claim 1 or 2, wherein the color rendering index of the visible light emitted in step (d) is greater than about 85.
4. A method according to any one of claims 1 to 3, wherein the color rendering index of the visible light emitted in step (d) is greater than about 90.
5. A method according to any one of claims 1 to 4, wherein the visible light emitted in step (d) has a correlated color temperature between about 1000K and about 16000K.
6. A method according to any one of claims 1 to 4, wherein the visible light emitted in step (d) has a correlated color temperature between about 3300K and about 3600K.
7. A method according to any one of claims 1 to 6, wherein the first peak wavelength of the short wavelength light generated in step (a) by the short wavelength solid state light emitting device is between about 200nm and about 500nm.
8. A method according to any one of claims 1 to 7, wherein the second peak wavelength of the long wavelength light emitted in step (b) by the quantum dot material is between about 600nm and about 700nm.
9. A method according to any one of claims 1 to 8, wherein a full width half maximum of the second spectrum of the long wavelength light generated in step (b) by the quantum dot material is less than about 50nm.
10. A method according to any one of claims 1 to 9, wherein step (b) further includes irradiating the quantum dot material with at least a portion of the mid wavelength light such that a fourth fraction of the mid wavelength light is absorbed and reemitted by the quantum dot material as additional long wavelength light.
11. A method according to any one of claims 1 to 10, wherein the third peak wavelength of the mid wavelength light emitted in step (c) by the phosphor material is between about 500nm and about 600nm.
12. A method according to any one of claims 1 to 11, wherein a full width half maximum of the third spectrum of the mid wavelength light generated in step (c) by the phosphor material is less than about 150nm.
13. A broad bandwidth light source comprising:
a short wavelength solid state light emitting device to generate short wavelength light having a first spectrum with a first peak wavelength, the first peak wavelength being shorter than about 500nm;
a quantum dot material and a phosphor material optically coupled to the short wavelength solid state light emitting device, the quantum dot material or the phosphor material to be irradiated by a first portion of the short wavelength light, the quantum dot material or the phosphor material adapted to absorb a first fraction of incident light having the first spectrum and to reemit the absorbed light as longer wavelength light having a second spectrum with a second peak wavelength, the second peak wavelength being longer than the first peak wavelength; and another of the quantum dot material or the phosphor material to be irradiated by a second portion of the short wavelength light, the other of the quantum dot material or the phosphor material adapted to absorb a second fraction of incident light having the first spectrum and to reemit the absorbed light as light having a third spectrum with a third peak wavelength, the third peak wavelength being either between the first peak wavelength and the second peak wavelength or longer than the second peak wavelength, wherein the short wavelength solid state light emitting device, the quantum dot material, and the phosphor material are configured such that a first amount of the short wavelength light, a second amount of the longer wavelength light, and a third amount of the third wavelength light are emitted substantially coincidently from the broad bandwidth light source as a visible light having a chromaticity value near a blackbody locus and a color rendering index greater than 80;
and further comprising an optical element optically coupled to the quantum dot material and the phosphor material for controlling back coupling of light from the quantum dot material and the phosphor material into the short wavelength solid state light emitting device.
14. A broad bandwidth light source according to claim 13, wherein the short wavelength solid state light emitting device is one of a short wavelength light emitting diode (LED), a short wavelength resonant cavity LED, or a short wavelength diode laser.
15. A broad bandwidth light source according to claim 13 or 14, wherein the first peak wavelength of the short wavelength light generated by the short wavelength solid state light emitting device is between about 200nm and about 500nm.
16. A broad bandwidth light source according to any one of claims 13 to 15, wherein a full width half maximum of the first spectrum of the short wavelength light generated by the short wavelength solid state light emitting device is less than about 50nm.
17. A broad bandwidth light source according to any one of claims 13 to 16, wherein the quantum dot material includes a plurality of quantum dots dispersed within a matrix material that is substantially transmissive to the visible light.
18. A broad bandwidth light source according to claim 17, wherein the plurality of quantum dots include at least one of CdSe quantum dots, ZnS
quantum dots, CdTe quantum dots, PbTe quantum dots, ZnSe quantum dots, Si quantum dots, Ge quantum dots, or PbSe quantum dots.
19. A broad bandwidth light source according to claim 17 or 18, wherein the matrix material includes at least one of UV curable clear resin, thermal curable sol-gel resin, UV curable sol-gel resin, polycarbonate, polystyrene, polymethyl methacrylate (PMMA), polyethylene, epoxies, silicones, silica, or titania.
20. A broad bandwidth light source according to any one of claims 13 to 19, wherein the second peak wavelength of the long wavelength light emitted by the quantum dot material is between about 600nm and about 700nm.
21. A broad bandwidth light source according to any one of claims 13 to 20, wherein a full width half maximum of the second spectrum of the long wavelength light generated by the quantum dot material is less than about 50nm.
22. A broad bandwidth light source according to any one of claims 13 to 21, wherein:
the quantum dot material or the phosphor material is further optically coupled to the other of the quantum dot material or the phosphor material to be irradiated by a portion of the longer wavelength light; and the other of the quantum dot material or the phosphor material is further adapted to absorb a third fraction of incident light having the first spectrum.
23. A broad bandwidth light source according to claim 22, wherein the quantum dot material is disposed within the broad bandwidth light source such that the second portion of the short wavelength light with which the phosphor material is irradiated is transmitted through the quantum dot material before being incident on the phosphor material.
24. A broad bandwidth light source according to any one of claims 13 to 16, wherein the phosphor material includes a plurality of phosphor particles dispersed within a matrix material that is substantially transmissive to the visible light.
25. A broad bandwidth light source according to claim 24, wherein the plurality of phosphor particles include at least one of ZnS:Cu-Al;
ZnSiO4:Mn2+;

Sr3SiO5:Eu2+; BaMgAl10O17:Eu2+Mn2+; SrAlO4:Eu,Dy; (YGdCe)3Al5O12:Eu; YAG:Ce;
Sr4Al14O25:Eu; (Ce, Tb)MgAl11O19; YAG:Ce; or (La, Ce, Tb)PO4.
26. A broad bandwidth light source according to claim 24 or 25, wherein the matrix material includes at least one of UV curable clear resin, thermal curable sol-gel resin, UV curable sol-gel resin, polycarbonate, polystyrene, polymethyl methacrylate (PMMA), polyethylene, epoxies, silicones, silica, or titania.
27. A broad bandwidth light source according to any one of claims 13 to 24, wherein the phosphor material includes at least one of bulk ZnS:Cu-Al; bulk ZnSiO4:Mn2+; bulk Sr3SiO5:Eu2+; bulk BaMgAl10O17:Eu2+Mn2+; bulk SrAlO4:Eu,Dy;
bulk (YGdCe)3Al5O12:Eu; bulk Sr4Al14O25:Eu; bulk (Ce, Tb)MgAl11O19; or bulk (La, Ce, Tb)PO4.
28. A broad bandwidth light source according to any one of claims 13 to 27, wherein the third peak wavelength of the longer wavelength light emitted by the phosphor material is between either about 500nm and about 600nm or about 600nm and 700nm.
29. A broad bandwidth light source according to any one of claims 13 to 28, wherein the short wavelength solid state light emitting device, the quantum dot material, and the phosphor material are configured such that the chromaticity value of the visible light emitted from the broad bandwidth light source is within an area bounded by about .01 of an x chromaticity value and about .01 of a y chromaticity value of the blackbody locus on a CIE-1931 diagram.
30. A broad bandwidth light source according to any one of claims 13 to 29, wherein the short wavelength solid state light emitting device, the quantum dot material, and the phosphor material are configured such that the color rendering index of the visible light emitted from the broad bandwidth light source is greater than about 85.
31. A broad bandwidth light source according to any one of claims 13 to 30, wherein the short wavelength solid state light emitting device, the quantum dot material, and the phosphor material are configured such that the color rendering index of the visible light emitted from the broad bandwidth light source is greater than about 90.
32. A broad bandwidth light source according to any one of claims 13 to 31, wherein the short wavelength solid state light emitting device, the quantum dot material, and the phosphor material are configured such that the color rendering index of the visible light emitted from the broad bandwidth light source has a correlated color temperature between about 1000K and about 16000K.
33. A broad bandwidth light source according to any one of claims 13 to 32, wherein the short wavelength solid state light emitting device, the quantum dot material, and the phosphor material are configured such that the color rendering index of the visible light emitted from the broad bandwidth light source has a correlated color temperature between about 3300K and about 3600K.
34. The broad bandwidth light source of any one of claims 13 to 33, wherein the phosphor material is separate from the quantum dot material.
35. The broad bandwidth light source of any one of claims 13 to 34, wherein the phosphor material is spaced apart from the quantum dot material.
36. A broad bandwidth light source for producing visible light having a chromaticity value near a blackbody locus and a color rendering index greater than about 80, the broad bandwidth light source comprising:
means for generating short wavelength light having a first spectrum with a first peak wavelength, the first peak wavelength being shorter than about 500nm;
means for absorbing and reemitting a first fraction of the short wavelength light as longer wavelength light having a second spectrum with a second peak wavelength, the second peak wavelength being longer than the first peak wavelength; and means for absorbing and reemitting a second fraction of the short wavelength light as light having a third spectrum with a third peak wavelength, the third peak wavelength being either between the first peak wavelength and the second peak wavelength or longer than the second peak wavelength, wherein a third fraction of the short wavelength light, at least a portion of the longer wavelength light, and at least a portion of the light having the third spectrum are emitted as the visible light;
and further comprising an optical element optically coupled to the means for absorbing and reemitting a first fraction of the short wavelength light and to the means for absorbing and reemitting a second fraction of the short wavelength light for controlling back coupling of light from the means for absorbing and reemitting a first fraction of the short wavelength light and the means for absorbing and reemitting a second fraction of the short wavelength light into the means for generating short wavelength light.
37. A broad bandwidth light source comprising:
a short wavelength solid state light emitting device to generate short wavelength light having a first spectrum with a first peak wavelength, the first peak wavelength being shorter than about 500nm;
a quantum dot material having a plurality of quantum dots and a phosphor material having a plurality of phosphor particles, the plurality of quantum dots and the plurality of phosphor particles being optically coupled to the short wavelength solid state light emitting device to be irradiated by a first portion of the short wavelength light and mixedly dispersed within a matrix material that is substantially transmisive to visible light, the mixedly dispersed plurality of quantum dots and plurality of phosphor materials adapted to absorb a first fraction of incident light having the first spectrum and reemit the absorbed light as mid wavelength light and long wavelength light, wherein the mid wavelength light and the long wavelength light combine with a second fraction of incident light that is transmitted through the mixedly dispersed plurality of quantum dots and plurality of phosphor particles to produce broad bandwidth light as a visible light as visible light; and an optical element optically coupled to the mixedly dispersed plurality of quantum dots and plurality of phosphor particles for controlling back coupling of light from the mixedly dispersed plurality of quantum dots and plurality of phosphor particles into the short wavelength solid state light emitting device.
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Families Citing this family (111)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7419839B2 (en) * 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US8718437B2 (en) 2006-03-07 2014-05-06 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
WO2007103310A2 (en) 2006-03-07 2007-09-13 Qd Vision, Inc. An article including semiconductor nanocrystals
KR101266130B1 (en) * 2005-06-23 2013-05-27 렌슬러 폴리테크닉 인스티튜트 Package design for producing white light with short-wavelength leds and down-conversion materials
BRPI0620397A2 (en) 2005-12-22 2011-11-16 Cree Led Lighting Solutions lighting device
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
JP2009524247A (en) * 2006-01-20 2009-06-25 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Shifting spectral content in solid-state light-emitting devices by spatially separating Lumiphor films
US9951438B2 (en) 2006-03-07 2018-04-24 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
US9874674B2 (en) 2006-03-07 2018-01-23 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
KR100764391B1 (en) * 2006-04-25 2007-10-05 삼성전기주식회사 Light emitting diode module
BRPI0718085A2 (en) * 2006-10-31 2013-11-05 Tir Technology Lp LIGHT SOURCE
US8836212B2 (en) 2007-01-11 2014-09-16 Qd Vision, Inc. Light emissive printed article printed with quantum dot ink
US20080198572A1 (en) 2007-02-21 2008-08-21 Medendorp Nicholas W LED lighting systems including luminescent layers on remote reflectors
JP5773646B2 (en) 2007-06-25 2015-09-02 キユーデイー・ビジヨン・インコーポレーテツド Compositions and methods comprising depositing nanomaterials
WO2009014707A2 (en) 2007-07-23 2009-01-29 Qd Vision, Inc. Quantum dot light enhancement substrate and lighting device including same
US8128249B2 (en) 2007-08-28 2012-03-06 Qd Vision, Inc. Apparatus for selectively backlighting a material
JP5044329B2 (en) * 2007-08-31 2012-10-10 株式会社東芝 Light emitting device
TWI397193B (en) * 2007-11-05 2013-05-21 Univ Nat Chunghsing Light emitting diode chip element with heat dissipation substrate and method for making the same
US8471283B2 (en) * 2008-02-25 2013-06-25 Kabushiki Kaisha Toshiba White LED lamp, backlight, light emitting device, display device and illumination device
US20090268461A1 (en) * 2008-04-28 2009-10-29 Deak David G Photon energy conversion structure
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
JP2011524064A (en) * 2008-05-06 2011-08-25 キユーデイー・ビジヨン・インコーポレーテツド Solid state lighting device containing quantum confined semiconductor nanoparticles
KR20110009702A (en) * 2008-05-13 2011-01-28 리써치 트라이앵글 인스티튜트 Porous and non-porous nanostructures and application thereof
KR100982991B1 (en) * 2008-09-03 2010-09-17 삼성엘이디 주식회사 Quantum dot-wavelength conversion device, preparing method of the same and light-emitting device comprising the same
DE102008050643B4 (en) 2008-10-07 2022-11-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung bulbs
US20100135009A1 (en) * 2008-10-15 2010-06-03 David Duncan Custom color led replacements for traditional lighting fixtures
US8220971B2 (en) 2008-11-21 2012-07-17 Xicato, Inc. Light emitting diode module with three part color matching
US8360617B2 (en) * 2008-11-25 2013-01-29 Samsung Electronics Co., Ltd. Lighting system including LED with glass-coated quantum-dots
US8227979B2 (en) * 2008-12-04 2012-07-24 Samsung Electronics Co., Ltd. Method of matching color in lighting applications
US8169135B2 (en) * 2008-12-17 2012-05-01 Lednovation, Inc. Semiconductor lighting device with wavelength conversion on back-transferred light path
KR101493708B1 (en) 2008-12-26 2015-02-16 삼성전자주식회사 White light emitting device
US7923741B1 (en) 2009-01-05 2011-04-12 Lednovation, Inc. Semiconductor lighting device with reflective remote wavelength conversion
BRPI1006558A2 (en) * 2009-04-06 2019-09-24 Koninl Philips Electronics Nv luminescent converter for a phosphor intensified light source and a phosphor intensified light source
EP2424814A4 (en) 2009-04-28 2016-06-01 Qd Vision Inc Optical materials, optical components, and methods
US8337030B2 (en) 2009-05-13 2012-12-25 Cree, Inc. Solid state lighting devices having remote luminescent material-containing element, and lighting methods
US8217567B2 (en) 2009-06-11 2012-07-10 Cree, Inc. Hot light emitting diode (LED) lighting systems
EP2465147B1 (en) 2009-08-14 2019-02-27 Samsung Electronics Co., Ltd. Lighting devices, an optical component for a lighting device, and methods
US8901845B2 (en) 2009-09-24 2014-12-02 Cree, Inc. Temperature responsive control for lighting apparatus including light emitting devices providing different chromaticities and related methods
US10264637B2 (en) 2009-09-24 2019-04-16 Cree, Inc. Solid state lighting apparatus with compensation bypass circuits and methods of operation thereof
US9713211B2 (en) 2009-09-24 2017-07-18 Cree, Inc. Solid state lighting apparatus with controllable bypass circuits and methods of operation thereof
US8602579B2 (en) * 2009-09-25 2013-12-10 Cree, Inc. Lighting devices including thermally conductive housings and related structures
US8777449B2 (en) 2009-09-25 2014-07-15 Cree, Inc. Lighting devices comprising solid state light emitters
US9068719B2 (en) * 2009-09-25 2015-06-30 Cree, Inc. Light engines for lighting devices
US9285103B2 (en) * 2009-09-25 2016-03-15 Cree, Inc. Light engines for lighting devices
CN102630288B (en) 2009-09-25 2015-09-09 科锐公司 There is the lighting apparatus of low dazzle and high brightness levels uniformity
JP2013508895A (en) 2009-10-17 2013-03-07 キユーデイー・ビジヨン・インコーポレーテツド Optical component, product including the same, and method for producing the same
US8466611B2 (en) 2009-12-14 2013-06-18 Cree, Inc. Lighting device with shaped remote phosphor
US20110164430A1 (en) * 2010-01-07 2011-07-07 Kenneth Li Illuminator using light emitting diode light recycling with collimation
US9631782B2 (en) 2010-02-04 2017-04-25 Xicato, Inc. LED-based rectangular illumination device
US8104908B2 (en) * 2010-03-04 2012-01-31 Xicato, Inc. Efficient LED-based illumination module with high color rendering index
DE102010028246A1 (en) * 2010-04-27 2011-10-27 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing an optoelectronic component
US8476836B2 (en) 2010-05-07 2013-07-02 Cree, Inc. AC driven solid state lighting apparatus with LED string including switched segments
US9689556B2 (en) 2010-05-27 2017-06-27 Merck Patent Gmbh Down conversion array comprising quantum dots
CN102376860A (en) 2010-08-05 2012-03-14 夏普株式会社 Light emitting apparatus and method for manufacturing thereof
JP2012036265A (en) * 2010-08-05 2012-02-23 Sharp Corp Illuminating device
WO2012024582A2 (en) 2010-08-20 2012-02-23 Research Triangle Institute, International Color-tunable lighting devices and methods for tunning color output of lighting devices
WO2012024591A1 (en) 2010-08-20 2012-02-23 Research Triangle Institute, International Photoluminescent nanofiber composites, methods for fabrication, and related lighting devices
WO2012024607A2 (en) 2010-08-20 2012-02-23 Research Triangle Institute, International Lighting devices utilizing optical waveguides and remote light converters, and related methods
US20120051045A1 (en) 2010-08-27 2012-03-01 Xicato, Inc. Led Based Illumination Module Color Matched To An Arbitrary Light Source
US10158057B2 (en) 2010-10-28 2018-12-18 Corning Incorporated LED lighting devices
US9648673B2 (en) 2010-11-05 2017-05-09 Cree, Inc. Lighting device with spatially segregated primary and secondary emitters
EP2655961A4 (en) * 2010-12-23 2014-09-03 Qd Vision Inc Quantum dot containing optical element
KR101710212B1 (en) * 2010-12-28 2017-02-24 엘지전자 주식회사 Optical device and light emitting diode package using the same, backlight apparatus
US20120154917A1 (en) * 2011-01-18 2012-06-21 Eric William Hearn Teather Color-shifting reflector
US8742654B2 (en) * 2011-02-25 2014-06-03 Cree, Inc. Solid state light emitting devices including nonhomogeneous luminophoric particle size layers
US9351375B2 (en) 2011-03-31 2016-05-24 Konica Minolta Laboratory U.S.A., Inc. Adaptive lighting system with low energy consumption
WO2012135744A2 (en) * 2011-04-01 2012-10-04 Kai Su White light-emitting device
US8957438B2 (en) 2011-04-07 2015-02-17 Cree, Inc. Methods of fabricating light emitting devices including multiple sequenced luminophoric layers
JP5105132B1 (en) 2011-06-02 2012-12-19 三菱化学株式会社 Semiconductor light emitting device, semiconductor light emitting system, and lighting fixture
US9839083B2 (en) 2011-06-03 2017-12-05 Cree, Inc. Solid state lighting apparatus and circuits including LED segments configured for targeted spectral power distribution and methods of operating the same
US8742671B2 (en) 2011-07-28 2014-06-03 Cree, Inc. Solid state lighting apparatus and methods using integrated driver circuitry
TWI505515B (en) * 2011-08-19 2015-10-21 Epistar Corp Lighting emitting device and manufacturing method thereof
KR101859653B1 (en) * 2011-08-30 2018-05-18 삼성전자주식회사 Light emitting unit and liquid display apparatus having the same
US20130062639A1 (en) * 2011-09-12 2013-03-14 SemiLEDs Optoelectronics Co., Ltd. Method for fabricating light emitting diode (led) devices having output with selected characteristics
JP2015506071A (en) * 2011-12-16 2015-02-26 コーニンクレッカ フィリップス エヌ ヴェ Optical apparatus provided with diffractive optical element
US8687882B2 (en) * 2011-12-23 2014-04-01 Blackberry Limited Apparatus, and associated method, for facilitating white balancing of an image
DE202012100357U1 (en) * 2012-02-02 2012-03-05 Flextronics Automotive Gmbh & Co.Kg Luminaire with translucent plastic element
JP2013201274A (en) * 2012-03-23 2013-10-03 Toshiba Lighting & Technology Corp Luminaire
EP2831933B1 (en) * 2012-03-30 2021-05-12 Lumileds LLC Optical cavity including a light emitting device and wavelength converting material
CN104303324B (en) 2012-04-05 2018-07-10 亮锐控股有限公司 Full spectrum light-emitting device
KR101907390B1 (en) 2012-04-23 2018-10-12 삼성전자주식회사 White light emitting device and display apparatus
US9929325B2 (en) 2012-06-05 2018-03-27 Samsung Electronics Co., Ltd. Lighting device including quantum dots
WO2014024138A1 (en) * 2012-08-10 2014-02-13 Koninklijke Philips N.V. A phosphor converted light emitting diode, a lamp and a luminaire
JP2016511556A (en) * 2013-03-14 2016-04-14 コーニング インコーポレイテッド LED lighting device
US9318649B2 (en) * 2013-09-25 2016-04-19 Phoseon Technology, Inc. Multi-wavelength LED curing lamp
KR20150092801A (en) 2014-02-05 2015-08-17 삼성디스플레이 주식회사 Light Emitting Diode Package and Method of manufacturing the same
KR20150106029A (en) 2014-03-10 2015-09-21 삼성디스플레이 주식회사 Backlight assembly and display apparatus having the same
KR20150115082A (en) * 2014-04-02 2015-10-14 삼성디스플레이 주식회사 Backlight unit and display divece having the same
DE102014107972B9 (en) * 2014-04-17 2022-07-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lighting device with a first phosphor and filter particles
US9660151B2 (en) * 2014-05-21 2017-05-23 Nichia Corporation Method for manufacturing light emitting device
JP6297932B2 (en) * 2014-06-11 2018-03-20 マクセル株式会社 Optical device
JP6428089B2 (en) 2014-09-24 2018-11-28 日亜化学工業株式会社 Light emitting device
US10490711B2 (en) * 2014-10-07 2019-11-26 Nichia Corporation Light emitting device
KR101629331B1 (en) * 2014-12-11 2016-06-10 엘지전자 주식회사 Display device and Cooking appliance having it
DE102015105486A1 (en) * 2015-04-10 2016-10-13 Osram Opto Semiconductors Gmbh Optoelectronic component and method for its production
JP6100831B2 (en) * 2015-05-26 2017-03-22 シャープ株式会社 Light emitting device and image display device
US9735323B2 (en) * 2015-06-30 2017-08-15 Nichia Corporation Light emitting device having a triple phosphor fluorescent member
US20170125650A1 (en) * 2015-11-02 2017-05-04 Nanoco Technologies Ltd. Display devices comprising green-emitting quantum dots and red KSF phosphor
CN105610514A (en) * 2015-12-31 2016-05-25 固安翌光科技有限公司 Visible light communication system of white-light OLED (Organic Light Emitting Diode) device based on quantum dots
CN105549262A (en) * 2016-02-03 2016-05-04 青岛海信电器股份有限公司 Backlight unit, backlight source module and liquid-crystal display device
CN105990504A (en) * 2016-07-06 2016-10-05 华南师范大学 White LED with quantum dots cured and packaged by UV adhesive as fluorescence conversion material, and preparation method and applications thereof
US9905735B1 (en) * 2017-03-31 2018-02-27 Cree, Inc. High brightness, low-cri semiconductor light emitting devices including narrow-spectrum luminescent materials
CN107123727B (en) * 2017-05-15 2018-03-27 华中科技大学 A kind of quantum spot white light LED of low operating temperature and preparation method thereof
CN106972092B (en) * 2017-05-15 2018-07-03 华中科技大学 A kind of quantum spot white light LED of high-luminous-efficiency and preparation method thereof
EP3639014A4 (en) * 2017-06-14 2020-12-30 Ubiqd Inc. Fiber-coupled broadband light source
JP6940764B2 (en) 2017-09-28 2021-09-29 日亜化学工業株式会社 Light emitting device
CN109708026B (en) * 2017-10-25 2021-12-31 苏州星烁纳米科技有限公司 Lighting lamp
JP7277477B2 (en) * 2017-12-18 2023-05-19 リテック－フェアメーゲンスフェアヴァルトゥングスゲゼルシャフト ミット ベシュレンクテル ハフツング light conversion material
WO2020043709A1 (en) * 2018-08-29 2020-03-05 Osa Opto Light Gmbh Wide-band emitter for electromagnetic radiation
TW202017209A (en) * 2018-10-22 2020-05-01 隆達電子股份有限公司 Light emitting diode package with enhanced quantum dot reliability

Family Cites Families (155)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3593055A (en) 1969-04-16 1971-07-13 Bell Telephone Labor Inc Electro-luminescent device
JPS5026433B1 (en) 1970-12-21 1975-09-01
JPS48102585A (en) 1972-04-04 1973-12-22
US3760237A (en) 1972-06-21 1973-09-18 Gen Electric Solid state lamp assembly having conical light director
US4729076A (en) 1984-11-15 1988-03-01 Tsuzawa Masami Signal light unit having heat dissipating function
DE3632743A1 (en) 1986-09-26 1988-03-31 Standard Elektrik Lorenz Ag Optical waveguide with a microlens at the end
US5187765A (en) 1991-07-23 1993-02-16 Fostec, Inc. Backlighted panel
US5208462A (en) 1991-12-19 1993-05-04 Allied-Signal Inc. Wide bandwidth solid state optical source
US5499138A (en) 1992-05-26 1996-03-12 Olympus Optical Co., Ltd. Image display apparatus
US5461547A (en) 1993-07-20 1995-10-24 Precision Lamp, Inc. Flat panel display lighting system
US5644193A (en) 1993-12-17 1997-07-01 Kabushiki Kaisha Toshiba Phosphor, cathode-ray tube, fluorescent lamp and radiation intensifying screen
JP2596709B2 (en) 1994-04-06 1997-04-02 都築 省吾 Illumination light source device using semiconductor laser element
US5477430A (en) 1995-03-14 1995-12-19 Delco Electronics Corporation Fluorescing keypad
KR0134353Y1 (en) 1995-10-09 1999-01-15 이항복 A traffic signal lamp
US6600175B1 (en) 1996-03-26 2003-07-29 Advanced Technology Materials, Inc. Solid state white light emitter and display using same
JP3773541B2 (en) 1996-06-26 2006-05-10 シーメンス アクチエンゲゼルシヤフト Semiconductor light emitting device having luminescence conversion element
DE19638667C2 (en) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mixed-color light-emitting semiconductor component with luminescence conversion element
US5777433A (en) 1996-07-11 1998-07-07 Hewlett-Packard Company High refractive index package material and a light emitting device encapsulated with such material
US6608332B2 (en) 1996-07-29 2003-08-19 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device and display
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
DE59814117D1 (en) 1997-03-03 2007-12-20 Philips Intellectual Property WHITE LUMINESCENCE DIODE
US6007209A (en) 1997-03-19 1999-12-28 Teledyne Industries, Inc. Light source for backlighting
US5813753A (en) 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
US5813752A (en) 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters
US6096496A (en) 1997-06-19 2000-08-01 Frankel; Robert D. Supports incorporating vertical cavity emitting lasers and tracking apparatus for use in combinatorial synthesis
US5847507A (en) 1997-07-14 1998-12-08 Hewlett-Packard Company Fluorescent dye added to epoxy of light emitting diode lens
US5962971A (en) 1997-08-29 1999-10-05 Chen; Hsing LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights
US6469322B1 (en) 1998-02-06 2002-10-22 General Electric Company Green emitting phosphor for use in UV light emitting diodes
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6580097B1 (en) 1998-02-06 2003-06-17 General Electric Company Light emitting device with phosphor composition
US6294800B1 (en) 1998-02-06 2001-09-25 General Electric Company Phosphors for white light generation from UV emitting diodes
US6068383A (en) 1998-03-02 2000-05-30 Robertson; Roger Phosphorous fluorescent light assembly excited by light emitting diodes
TW539143U (en) 1998-03-27 2003-06-21 Koninkl Philips Electronics Nv Backlight system and display device comprising such a system
US6501091B1 (en) * 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US5959316A (en) 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
US6793374B2 (en) 1998-09-17 2004-09-21 Simon H. A. Begemann LED lamp
US6429583B1 (en) 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
US6155699A (en) 1999-03-15 2000-12-05 Agilent Technologies, Inc. Efficient phosphor-conversion led structure
US6630691B1 (en) 1999-09-27 2003-10-07 Lumileds Lighting U.S., Llc Light emitting diode device comprising a luminescent substrate that performs phosphor conversion
EP1142033A1 (en) 1999-09-27 2001-10-10 LumiLeds Lighting U.S., LLC A light emitting diode device that produces white light by performing complete phosphor conversion
US6686691B1 (en) 1999-09-27 2004-02-03 Lumileds Lighting, U.S., Llc Tri-color, white light LED lamps
US6696703B2 (en) 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
US6491412B1 (en) 1999-09-30 2002-12-10 Everbrite, Inc. LED display
DE19952932C1 (en) 1999-11-03 2001-05-03 Osram Opto Semiconductors Gmbh LED white light source with broadband excitation
US20020176259A1 (en) 1999-11-18 2002-11-28 Ducharme Alfred D. Systems and methods for converting illumination
US6357889B1 (en) 1999-12-01 2002-03-19 General Electric Company Color tunable light source
US6513949B1 (en) 1999-12-02 2003-02-04 Koninklijke Philips Electronics N.V. LED/phosphor-LED hybrid lighting systems
US6350041B1 (en) 1999-12-03 2002-02-26 Cree Lighting Company High output radial dispersing lamp using a solid state light source
JP2001243807A (en) 2000-02-28 2001-09-07 Mitsubishi Electric Lighting Corp Led electric bulb
JP4527230B2 (en) 2000-02-28 2010-08-18 三菱電機照明株式会社 Surface-emitting LED light source
US6538371B1 (en) * 2000-03-27 2003-03-25 The General Electric Company White light illumination system with improved color output
US6867542B1 (en) 2000-03-29 2005-03-15 General Electric Company Floating chip photonic device and method of manufacture
US6483196B1 (en) 2000-04-03 2002-11-19 General Electric Company Flip chip led apparatus
US6653765B1 (en) 2000-04-17 2003-11-25 General Electric Company Uniform angular light distribution from LEDs
US6603258B1 (en) 2000-04-24 2003-08-05 Lumileds Lighting, U.S. Llc Light emitting diode device that emits white light
DE10026435A1 (en) 2000-05-29 2002-04-18 Osram Opto Semiconductors Gmbh Calcium-magnesium-chlorosilicate phosphor and its application in luminescence conversion LEDs
US6577073B2 (en) 2000-05-31 2003-06-10 Matsushita Electric Industrial Co., Ltd. Led lamp
US6580224B2 (en) 2000-06-05 2003-06-17 Kabushiki Kaisha Toshiba Backlight for color liquid crystal, color liquid crystal display device, and EL element for backlight of color liquid crystal device
US6452217B1 (en) 2000-06-30 2002-09-17 General Electric Company High power LED lamp structure using phase change cooling enhancements for LED lighting products
JP4635304B2 (en) 2000-07-12 2011-02-23 富士電機システムズ株式会社 Bidirectional superjunction semiconductor device and manufacturing method thereof
JP2004505172A (en) 2000-07-28 2004-02-19 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング Luminescence conversion based light emitting diodes and phosphors for wavelength conversion
US6747406B1 (en) 2000-08-07 2004-06-08 General Electric Company LED cross-linkable phospor coating
US6635363B1 (en) 2000-08-21 2003-10-21 General Electric Company Phosphor coating with self-adjusting distance from LED chip
US6635987B1 (en) 2000-09-26 2003-10-21 General Electric Company High power white LED lamp structure using unique phosphor application for LED lighting products
US6583550B2 (en) 2000-10-24 2003-06-24 Toyoda Gosei Co., Ltd. Fluorescent tube with light emitting diodes
TW474115B (en) * 2000-11-07 2002-01-21 Helix Technology Inc Manufacturing method of organic light emitting diode
US20020084745A1 (en) 2000-12-29 2002-07-04 Airma Optoelectronics Corporation Light emitting diode with light conversion by dielectric phosphor powder
US6703780B2 (en) * 2001-01-16 2004-03-09 General Electric Company Organic electroluminescent device with a ceramic output coupler and method of making the same
US20030203524A1 (en) * 2001-03-09 2003-10-30 Faramarz Farahi Process for packaging of light emitting devices using a spin-on-glass material
JP2002299694A (en) 2001-03-29 2002-10-11 Mitsubishi Electric Lighting Corp Led light-source device for illumination and illuminator
US6686676B2 (en) 2001-04-30 2004-02-03 General Electric Company UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same
US6616862B2 (en) 2001-05-21 2003-09-09 General Electric Company Yellow light-emitting halophosphate phosphors and light sources incorporating the same
JP2003110146A (en) * 2001-07-26 2003-04-11 Matsushita Electric Works Ltd Light-emitting device
DE10137042A1 (en) 2001-07-31 2003-02-20 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Planar light source based on LED
JP2003051622A (en) 2001-08-07 2003-02-21 Rohm Co Ltd White light emitting semiconductor device
EP1416219B1 (en) 2001-08-09 2016-06-22 Everlight Electronics Co., Ltd Led illuminator and card type led illuminating light source
US6926435B2 (en) 2001-08-23 2005-08-09 Wavien, Inc. Led illumination engine using a reflector
US6921920B2 (en) 2001-08-31 2005-07-26 Smith & Nephew, Inc. Solid-state light source
WO2003032407A1 (en) * 2001-10-01 2003-04-17 Matsushita Electric Industrial Co.,Ltd. Semiconductor light emitting element and light emitting device using this
JP3948650B2 (en) 2001-10-09 2007-07-25 アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド Light emitting diode and manufacturing method thereof
US7192161B1 (en) 2001-10-18 2007-03-20 Ilight Technologies, Inc. Fluorescent illumination device
US7153015B2 (en) 2001-12-31 2006-12-26 Innovations In Optics, Inc. Led white light optical system
US6796690B2 (en) 2002-03-14 2004-09-28 The Boeing Company LED light source
JP4172196B2 (en) * 2002-04-05 2008-10-29 豊田合成株式会社 Light emitting diode
JP3707688B2 (en) 2002-05-31 2005-10-19 スタンレー電気株式会社 Light emitting device and manufacturing method thereof
US6870311B2 (en) 2002-06-07 2005-03-22 Lumileds Lighting U.S., Llc Light-emitting devices utilizing nanoparticles
JP2004031843A (en) * 2002-06-28 2004-01-29 Kyocera Corp Light-emitting diode
JP4061479B2 (en) 2002-07-16 2008-03-19 三菱電機照明株式会社 LED light source device
JP2004055229A (en) 2002-07-17 2004-02-19 Mitsubishi Electric Lighting Corp Led lighting system and lighting equipment
JP4289027B2 (en) 2002-07-25 2009-07-01 豊田合成株式会社 Light emitting device
JP4197109B2 (en) * 2002-08-06 2008-12-17 静雄 藤田 Lighting device
US7139389B2 (en) * 2002-08-06 2006-11-21 Daniel Neal Duncan System and method for allocating contact resources to contact resource users
JP2004083653A (en) * 2002-08-23 2004-03-18 Sharp Corp Light emitting device, phosphor and method for producing the same
AU2003276867A1 (en) 2002-09-19 2004-04-08 Cree, Inc. Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor
DE10245933B4 (en) 2002-09-30 2013-10-10 Osram Opto Semiconductors Gmbh Device for generating a bundled luminous flux
CN1736111B (en) 2002-11-07 2010-10-06 索尼德国有限责任公司 Illumination arrangement for a projection system
TW569479B (en) 2002-12-20 2004-01-01 Ind Tech Res Inst White-light LED applying omnidirectional reflector
DE10261428B8 (en) 2002-12-30 2012-09-20 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component with multiple luminescence conversion elements
JP4397394B2 (en) 2003-01-24 2010-01-13 ディジタル・オプティクス・インターナショナル・コーポレイション High density lighting system
US7118438B2 (en) 2003-01-27 2006-10-10 3M Innovative Properties Company Methods of making phosphor based light sources having an interference reflector
US6936857B2 (en) 2003-02-18 2005-08-30 Gelcore, Llc White light LED device
KR20050113200A (en) 2003-02-26 2005-12-01 크리, 인코포레이티드 Composite white light source and method for fabricating
US7279832B2 (en) * 2003-04-01 2007-10-09 Innovalight, Inc. Phosphor materials and illumination devices made therefrom
CN101740560B (en) 2003-04-01 2012-11-21 夏普株式会社 Light-emitting apparatus, backlight apparatus, and display apparatus
JP4504662B2 (en) * 2003-04-09 2010-07-14 シチズン電子株式会社 LED lamp
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
US7040774B2 (en) 2003-05-23 2006-05-09 Goldeneye, Inc. Illumination systems utilizing multiple wavelength light recycling
JP2005019981A (en) * 2003-06-05 2005-01-20 Matsushita Electric Ind Co Ltd Fluorescent material, semiconductor light-emitting element and method of fabricating these
CN100511732C (en) 2003-06-18 2009-07-08 丰田合成株式会社 Light emitting device
JP2005013006A (en) * 2003-06-23 2005-01-20 Washi Kosan Co Ltd Complex food inhibiting energy metabolism of overnutrition
JP5456233B2 (en) * 2003-06-24 2014-03-26 ジーイー ライティング ソリューションズ エルエルシー Full spectrum phosphor mixture for white light generation by LED chip
US7075225B2 (en) 2003-06-27 2006-07-11 Tajul Arosh Baroky White light emitting device
US7462983B2 (en) 2003-06-27 2008-12-09 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. White light emitting device
US7009213B2 (en) 2003-07-31 2006-03-07 Lumileds Lighting U.S., Llc Light emitting devices with improved light extraction efficiency
US7195161B2 (en) * 2003-09-18 2007-03-27 The Directv Group, Inc. Smart card reader
US7052152B2 (en) 2003-10-03 2006-05-30 Philips Lumileds Lighting Company, Llc LCD backlight using two-dimensional array LEDs
JP4285198B2 (en) * 2003-10-28 2009-06-24 パナソニック電工株式会社 Light emitting device
JP2005136006A (en) * 2003-10-28 2005-05-26 Matsushita Electric Works Ltd Light-emitting device and producing device using it
US7144121B2 (en) 2003-11-14 2006-12-05 Light Prescriptions Innovators, Llc Dichroic beam combiner utilizing blue LED with green phosphor
DE602004028648D1 (en) 2003-11-25 2010-09-23 Panasonic Elec Works Co Ltd LIGHT-EMITTING COMPONENT WITH A LIGHT DIODE CHIP
JP2005159045A (en) * 2003-11-26 2005-06-16 Sumitomo Electric Ind Ltd Semiconductor light emitting element mounting member and light emitting diode using the same
US7403680B2 (en) 2003-12-02 2008-07-22 3M Innovative Properties Company Reflective light coupler
US20050116635A1 (en) 2003-12-02 2005-06-02 Walson James E. Multiple LED source and method for assembling same
US7318651B2 (en) * 2003-12-18 2008-01-15 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Flash module with quantum dot light conversion
US7102152B2 (en) 2004-10-14 2006-09-05 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Device and method for emitting output light using quantum dots and non-quantum fluorescent material
US7223005B2 (en) 2003-12-23 2007-05-29 Lamb David J Hybrid lightguide backlight
WO2005071039A1 (en) * 2004-01-26 2005-08-04 Kyocera Corporation Wavelength converter, light-emitting device, wavelength converter manufacturing method, and light-emitting device manufacturing method
US7080932B2 (en) 2004-01-26 2006-07-25 Philips Lumileds Lighting Company, Llc LED with an optical system to increase luminance by recycling emitted light
US7427146B2 (en) 2004-02-11 2008-09-23 3M Innovative Properties Company Light-collecting illumination system
JP2005228996A (en) * 2004-02-13 2005-08-25 Matsushita Electric Works Ltd Light-emitting device
US20050211991A1 (en) 2004-03-26 2005-09-29 Kyocera Corporation Light-emitting apparatus and illuminating apparatus
US7025464B2 (en) 2004-03-30 2006-04-11 Goldeneye, Inc. Projection display systems utilizing light emitting diodes and light recycling
JP4616577B2 (en) 2004-04-22 2011-01-19 株式会社日立製作所 Video display device
TWI242893B (en) 2004-05-07 2005-11-01 Lite On Technology Corp White light-emitting apparatus
US7997771B2 (en) 2004-06-01 2011-08-16 3M Innovative Properties Company LED array systems
US7048385B2 (en) 2004-06-16 2006-05-23 Goldeneye, Inc. Projection display systems utilizing color scrolling and light emitting diodes
CN100411207C (en) 2004-06-28 2008-08-13 京瓷株式会社 Light emitting device and lighting device
US7213958B2 (en) 2004-06-30 2007-05-08 3M Innovative Properties Company Phosphor based illumination system having light guide and an interference reflector
KR100638611B1 (en) 2004-08-12 2006-10-26 삼성전기주식회사 Light emitting diode having multiple lenses
GB2417824A (en) 2004-09-02 2006-03-08 Custom Interconnect Ltd LED light source
US7352006B2 (en) 2004-09-28 2008-04-01 Goldeneye, Inc. Light emitting diodes exhibiting both high reflectivity and high light extraction
US7370993B2 (en) 2004-09-28 2008-05-13 Goldeneye, Inc. Light recycling illumination systems having restricted angular output
US7352124B2 (en) 2004-09-28 2008-04-01 Goldeneye, Inc. Light recycling illumination systems utilizing light emitting diodes
US7144131B2 (en) 2004-09-29 2006-12-05 Advanced Optical Technologies, Llc Optical system using LED coupled with phosphor-doped reflective materials
US7265488B2 (en) * 2004-09-30 2007-09-04 Avago Technologies General Ip Pte. Ltd Light source with wavelength converting material
US20060097385A1 (en) 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
US8134292B2 (en) 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
US7220040B2 (en) 2004-11-12 2007-05-22 Harris Corporation LED light engine for backlighting a liquid crystal display
KR101139891B1 (en) 2005-01-31 2012-04-27 렌슬러 폴리테크닉 인스티튜트 Light emitting diode device having diffusedly reflective surface
EP1686630A3 (en) 2005-01-31 2009-03-04 Samsung Electronics Co., Ltd. Led device having diffuse reflective surface
US7405433B2 (en) 2005-02-22 2008-07-29 Avago Technologies Ecbu Ip Pte Ltd Semiconductor light emitting device
CN1684279A (en) 2005-02-25 2005-10-19 炬鑫科技股份有限公司 Light emitting element
JP2006253298A (en) 2005-03-09 2006-09-21 Toshiba Corp Semiconductor light emitting element and device therefor
KR101266130B1 (en) * 2005-06-23 2013-05-27 렌슬러 폴리테크닉 인스티튜트 Package design for producing white light with short-wavelength leds and down-conversion materials
US7942556B2 (en) 2007-06-18 2011-05-17 Xicato, Inc. Solid state illumination device

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