CA2466979A1 - Stereometric superluminescent light emitting diodes (sleds) - Google Patents
Stereometric superluminescent light emitting diodes (sleds) Download PDFInfo
- Publication number
- CA2466979A1 CA2466979A1 CA 2466979 CA2466979A CA2466979A1 CA 2466979 A1 CA2466979 A1 CA 2466979A1 CA 2466979 CA2466979 CA 2466979 CA 2466979 A CA2466979 A CA 2466979A CA 2466979 A1 CA2466979 A1 CA 2466979A1
- Authority
- CA
- Canada
- Prior art keywords
- buled
- sled
- stereometric
- luminescence
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Abstract
Dans le domaine d'électronique se develope éxtrement vite la partie appel ée optoélectronique. Dans leurs éléments de base l'important partie occupe très bien connue déjà SLED(Super Light Emitted Diodes)( p. I). Il s'agit des éléments semi-conducteurs avec PN passage de InGaN (Indium Gallium Nitrite diodes) mis dans le corps hermétique. Si on applique courant dans la sens"droit" il donne l'émission des ondes quantiques qui l'oeil de l'homme accepte comme lumière par exemple blanche. Dans la présente invention il s'agit d'amélioration du fonctionnement de SLE D. Les SLED's connues jusqu'à maintenant ont une grande imperfection. C'est le ur diagramme de la diffusion (p. II) de la lumière. Elle occupe une partie peti te dans l'espace autour. La lumière se diffuse dans un petit angle stéréométrique surtout de front, devons SLED(max.45.degree.).Si on change l'angle de vue par rappor t de la direction frontale, l'intensité de la lumière diminue et presque disparu si on regard de coté. Dans cette nouvelle construction, cette imperfection est complètement éliminée. Cette nouvelle génération SLED propose la diffusion de la lumière avec la force égale dans 99% de l'espace autour. Le diagramme (p. IV) de la diffusion reçois la forme d'une sphère. Cette petite étoile super brillante reçoit un diagramme comple t et parfait.In the field of electronics, the so-called optoelectronic part is very quickly developed. In their basic elements the important part occupies very well known already SLED (Super Light Emitted Diodes) (P. I). These are the semiconductor elements with PN passage of InGaN (Indium Gallium Nitrite diodes) put in the hermetic body. If we apply current in the sense "right" it gives the emission of the quantum waves which the eye of the man accepts like light for example white. In the present invention it is a question of improving the operation of SLE D. The SLEDs known until now have a great imperfection. This is the diagram of the diffusion (page II) of light. It occupies a small part in the space around. The light diffuses in a small stereometric angle, especially in front, must SLED (max.45.degree.) If we change the angle of view in relation to the frontal direction, the intensity of the light decreases and almost disappeared if we look sideways. In this new construction, this imperfection is completely eliminated. This new generation SLED offers light scattering with equal strength in 99% of the space around. The diagram (page IV) of the diffusion receives the form of a sphere. This little super bright star receives a complete and perfect diagram.
Description
MÉMOIRE DESCRIPTIF
La présente invention ce rapport a totalité des éléments électroniques bien connues SLED (Super Lights Emitted Diodes)(p. II).
Jusqu'à maintenant l'industrie fabrique SLED's avec des différentes couleurs, différente intensité de l'émission, etc. . Leur diapason des températures durant utilisation est actuellement entre --40 °C et +85° C. Les SLED's se caractérisent premièrement avec leur diagramme de la diffusion(p. II) - la distribution de la lumière dans l'espace autour.
EIIe dépend des quelques facteurs, les plus importantes sont: la construction mécanique du corps, présence ou absence de lentille optique, propriétés optiques du matériel du corps ou de la lentille, etc.
Présentement toutes les SLED's produits ont un DEFAULT ESSENSIELLE : l'angle du vue ne se trouve que dans les 45° degré du volume entourant. Cette particularité
limite beaucoup Leur fonctionnalité vers l'espace entourant. Alors restant environs 31 S degrës l'espace NE SONT PAS couverts par la luminescence(p. II).
Autrement dit c'est la plus grande majorité de l'espace qui n'est pas couverte!
Pour des cas nombreux de la pratique c'est inacceptable, parce qu'on n'est peut pas recevoir la luminescence electro-magnetique dans 99% de l'espace entourant.
Avec cette NOUVELLE GENER.ATION SLED's ce problème est éliminé. On reçoit la luminescence (p. TV) dans tout l'espace autour. Voilà comment on fait ça:
Comme l'élément de base de la nouvelle construction arrive une support micro sphérique (6,p.III). Elle a pour fonction de supporter le passages) PIN.
Le passages) PIN peut se trouver soit sur la surface et/ou dans la profondeur de la micro sphère, sans être limité de la façon de la disposition. De cette façon on reçoit la diffusion de la luminescence selon toutes les directions possibles de l'espace autour.
Le vecteur de la luminescence se dirige dans la direction de chaque radius sphérique imaginaire possible(p. IV).Il faut examiner la possibilité d'une micro-sphère faite d'un des matériaux semi-conducteurs. II a une possibilité de disposer une couche(7) entre la micro sphère (6 ) et la lentille sphérique ( 8,p.III), qui peut change certains caractéristiques de la luminescence, par exemple le couleur.
Bien sûr on peut examiner la disposition du passages) PIN des façons les plus différentes par rapport du centre et des radius de la sphère, sans être limité.
Cette nouvelle fonction surmonte les difficultés qu'on a avec le diagramme étroit au SLED's conventionnels(p. Il~.
On attache des conducteurs micro(9,p.III) vers les partis P et N de façon appropriée pour l'alimentation avec du courant électrique, comme ça se fait habituellement chez SLED conventionnel. Ils se connectent avec les connecteurs (10) pour l'anode et la cathode.
Sur les dessins est montré une construction micro-sphérique du noyau comme exemple, attendu qu'il peut être autxe figure stéréométrique sans ètre limité. Ici c'est un exemple pour la disposition des conducteurs(9) et les connecteurs(10). Bien sur qu'elles peuvent être modifiées au besoin de la technologie et/ou le marché, sans être limité.
La micro sphère(6) peut être faite de saphir artificiel ou de verre/céramique ou DESCRIPTIVE MEMORY
The present invention this report has all the electronic elements well known SLEDs (Super Lights Emitted Diodes) (page II).
So far the industry manufactures SLED's with different colors, different intensity of emission, etc. . Their tuning fork of the temperatures during use is currently between -40 ° C and + 85 ° C. The SLEDs are characterize first with their diffusion diagram (p.2) - the distribution of light in space around.
It depends on the few factors, the most important are: construction body mechanics, presence or absence of optical lens, properties optical body or lens material, etc.
Currently all SLED's products have an ESSENTIAL DEFAULT: the angle The view is only in the 45 ° degree of the surrounding volume. This feature greatly limits their functionality to the surrounding space. So staying surroundings Space is NOT covered by luminescence (page II).
In other words, it is the greater majority of space that is not Covered!
For many cases of practice this is unacceptable, because we are not can not receive electro-magnetic luminescence in 99% of space surrounding.
With this NEW GENER.ATION SLED's this problem is eliminated. We receives luminescence (TV) throughout the space around it. That's how we Do it:
As the basic element of the new construction arrives a support spherical microphone (6, p.III). Its function is to support the passages) PIN.
The passages) PIN can be either on the surface and / or in the depth of the micro sphere, without being limited in the way of the layout. Of this way on receives the scattering of luminescence in all possible directions from space around.
The luminescence vector moves in the direction of each radius spherical imaginary possible (page IV) .It must be examined the possibility of a micro-sphere done of a semiconductor material. It has a possibility of having a layer (7) between the micro sphere (6) and the spherical lens (8, p.III), which can changes some characteristics of luminescence, eg color.
Of course we can examine the layout of the passages) PIN of the most different from the center and radius of the sphere, without being limit.
This new function overcomes the difficulties we have with the diagram narrow to conventional SLEDs (p.
Micro conductors (9, p.III) are attached to the parties P and N of appropriate way for the power supply with electric current, as it is made usually at conventional SLED. They connect with the connectors (10) for the anode and the cathode.
On the drawings is shown a micro-spherical construction of the nucleus as example, whereas it can be autxe stereometric figure without being limited. Right here It's an example for the arrangement of the conductors (9) and the connectors (10). Of course they can be modified as needed by the technology and / or the market, without being limit.
The micro sphere (6) can be made of artificial sapphire or glass / ceramic or
2 des autres matériaux différents en accord avec la technologie et selon la fonction du nouveau SLED qu'on va appeler dorénavant BULEDTM.
Présentement existent des chaînes complètement automatisées pour la production des SLED's. Ils existent plusieurs technologies de disposer des couches semi-conductrices sur des supportes. Par exemple l'épitaxie.
Si l'épitaxie ou LPE ( Liquide Phase Épitaxie ) le permettent la disposition du passages) PIN sur (ou dans) la sphère peut être faite avec. On peut étudier la possibilité de disposé les PIN passages) avec la nouvelle technologie "nanocrystals"
qui peut contrôler l'épaisseur des couches (2nm - 300nm) ou les autres technologies sans être limité pour arriver à la fonction exigée.
On ne se limite pas par rapport aux manières de la disposition des couches semi-conducteurs sur les surfaces et/ou dans la profondeur des différentes supportes stéréométriques, qui peuvent contenir ou non les éléments In, Ga, N, leurs alliages ou les autres éléments et matériaux utilisées. On peut ajouter des différents éléments, alliages et matériaux pour le but de modifier les caractéristiques de la luminescence sortante. Ici, le but de cette invention est de recevoir la surface stëréométrique lumineuse dispersant la luminescence partout dans l'espace entourant. I,e vrai but est d'envoie le bulb d'Edison (avec le wolfram brûlé) dans le musée.
Ce support micro sphérique (6) avec le passages) P/N se dispose dans une lentille optique sphérique (B,p.III) pour augmentation de I' effet de la luminescence. La fonction de cette lentille sphérique est pareille aux SLED fabriquées jusqu'à
maintenant.
Cette nouvelle BULEDTM se caractérise avec toute les avantages bien connus des SLED's:
-propagation de la luminescence partout!
-une vie énormément longue, le temps de fonctionnement sans refuse est plus de heures (si on respecte les valeurs limitées admissibles des courants et de la tentions).
-la puissance lumineuse grande dans le volume petit.
-effectivité économique.
-la plus vaste région d'utilisation: l'industrie militaire, aérospatiale, aéronautique, automobile, pour les signaux du trafic, la limitation de la vitesse, la lumière dans les rues, éclairage des sorties, dans les tunnels, dans le métro, a la maison, l'industrie de divertissements( loteries vidéo, casinos, etc.), les panneaux informatisés pour hockey et le soccer, dans le cinéma, théâtre, Disney lands, décorations Noël, dans le domaine de la médecine, tourisme, commerce, avertissements le loisir, etc. 2 other different materials in accordance with the technology and according to the function of new SLED that will be called BULEDTM.
Currently there are fully automated chains for the production of SLEDs. Several technologies exist to dispose of layers semiconductors on supports. For example epitaxy.
If epitaxy or LPE (Liquid Phase Epitaxy) permit of passages) PIN on (or in) the sphere can be made with. We can study the possibility of arranging PIN passages) with new technology "Nanocrystals"
who can control the thickness of the layers (2nm - 300nm) or the others technology without being limited to the required function.
We do not limit ourselves to the ways of layering semi-conductors on the surfaces and / or in the depth of different borne stereometers, which may or may not contain the In, Ga, N elements, their alloys or other elements and materials used. We can add different items alloys and materials for the purpose of modifying the characteristics of the luminescence outgoing. Here, the purpose of this invention is to receive the surface stereometrical luminous scattering luminescence throughout the surrounding space. I, e true goal is send the Edison bulb (with burnt wolfram) in the museum.
This micro spherical support (6) with the passages) P / N disposes in a spherical optical lens (B, p.III) for increasing the effect of luminescence. The function of this spherical lens is similar to SLEDs manufactured up to now.
This new BULEDTM is characterized with all the well-known benefits SLED's:
-propagation of luminescence everywhere!
-an enormously long life, the operating time without refusal is more than hours (in accordance with the allowable limit values of currents and trying).
-light great power in the small volume.
-economic efficiency.
-the largest area of use: the military, aerospace, aerospace, for traffic signals, the limitation of speed, the light in the streets, lighting exits, in tunnels, in the subway, at home, the industry entertainment (video lotteries, casinos, etc.), computerized signs for hockey and soccer, in the cinema, theater, Disney lands, Christmas decorations, in the domain of medicine, tourism, commerce, warnings, leisure, etc.
3 3
Claims (9)
BULED.TM. basé sur le processus physique électroluminescence injection. 1. A stereometric SLED electronic element, which from now on will be called BULED.TM. Based on the physical process electroluminescence injection.
C'est à
dire selon tout le vectoriel possible ayant la même direction avec des radius sphériques imaginaires de la micro sphère pris comme exemple, sans être limité (p. IV ). Ici, on donne comme un exemple un BULED.TM. avec le noyau sphérique(6), comme il est montré sur les dessins ( p. III ). Il n'y a aucun restriction sur la façon de la disposition des PIN passage(s) sur la surface stéréométrique et/ou dans la profondeur de la micro sphère. La seule exigence est de recevoir l'effet lumineux dans 99% de l'espace entourant le BULED.TM.. 4. PIN passage (s), which are arranged on the surface and / or depth of the core (6) defined in claim 3 and execute the physical process electroluminescence injection, giving the light radiation in the 99% of the surrounding volume.
It is at say according to all the possible vector having the same direction with radius spherical imaginary of the micro sphere taken as an example, without being limited (page IV). Here we give as a example a BULED.TM. with the spherical core (6), as shown in the drawings ( p. III). he does not have no restriction on how to layout the PIN passage (s) on the area stereometrical and / or in the depth of the micro sphere. The only requirement is to receive the effect luminous in 99% of the space surrounding the BULED.TM ..
Il n'y a aucune restriction sur les questions des matériaux, de l'épaisseur( le moins possible pour le courant approprier), leur longueur, la forme, la façon de la micro soudure avec laquelle ils sont connectés. Ces questions sont résolues selon la technologie automatisée appliquée(s'il est nécessaire il est possible de corriger certains éléments de la technologie pour recevoir la fonction exigée du BULED.TM.), sans être limité. 5. Conductors (9) that are connected to the defined P / N passage (s) in claim 4 who have the task of providing food with electricity (current electric with the appropriate voltage) the P / N passage (s) mentioned above.
There is no restriction on the issues of materials, thickness ( the least possible for the proper current), their length, shape, how to micro solder with which they are connected to. These questions are resolved by technology automated applied (if necessary it is possible to correct certain elements of the technology to receive the required function of the BULED.TM.), without being limited.
. 6. Connectors (10) for the anode and micro cathode welded with the conductors (9), defined in claim 5, which function exactly the same as in the SLEDs previous generations: to feed with the electricity of the BULED .TM ..
.
avec différentes proportions des éléments établis sans être limité, par exemple dans le cas de la micro- sphère(6), elle peut avoir des diamètres différentes dans chaque cas séparé. On peut le fabriquer avec des différentes caractéristiques de la luminescence sortant, comme par exemple la couleur, etc., sans être limité. Il peut être fabriqué
par connexion de plus d'un BULED.TM. des façons des plus différents possibles, sans être limité. Cette structure peut consister en BULED.TM. des sortes différentes. Il est possible de fabriqué BULED.TM. qui contient plus d'un support stéréométrique(6) dans une lentille sphérique. 9.The new BULED.TM., Defined in claims (1-8) can be made with different proportions of the elements established without being limited by example in the case of the microsphere (6), it can have different diameters in each case separate. It can be manufactured with different characteristics of the luminescence outgoing, such as color, etc., without being limited. It can be manufactured by connection more than one BULED.TM. different ways, without being limit. This structure may consist of BULED.TM. different kinds. It is possible of manufactured BULED.TM. which contains more than one stereometric support (6) in a lens spherical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA 2466979 CA2466979A1 (en) | 2004-05-18 | 2004-05-18 | Stereometric superluminescent light emitting diodes (sleds) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA 2466979 CA2466979A1 (en) | 2004-05-18 | 2004-05-18 | Stereometric superluminescent light emitting diodes (sleds) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2466979A1 true CA2466979A1 (en) | 2005-11-18 |
Family
ID=35452143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2466979 Abandoned CA2466979A1 (en) | 2004-05-18 | 2004-05-18 | Stereometric superluminescent light emitting diodes (sleds) |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2466979A1 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008019041A3 (en) * | 2006-08-03 | 2008-10-30 | Intematix Corp | Led lighting arrangement including light emitting phosphor |
| CN101513120A (en) * | 2006-08-03 | 2009-08-19 | 英特曼帝克司公司 | LED lighting arrangement including light emitting phosphor |
| US8604678B2 (en) | 2010-10-05 | 2013-12-10 | Intematix Corporation | Wavelength conversion component with a diffusing layer |
| US8610341B2 (en) | 2010-10-05 | 2013-12-17 | Intematix Corporation | Wavelength conversion component |
| US8610340B2 (en) | 2010-10-05 | 2013-12-17 | Intematix Corporation | Solid-state light emitting devices and signage with photoluminescence wavelength conversion |
| US8614539B2 (en) | 2010-10-05 | 2013-12-24 | Intematix Corporation | Wavelength conversion component with scattering particles |
| US8957585B2 (en) | 2010-10-05 | 2015-02-17 | Intermatix Corporation | Solid-state light emitting devices with photoluminescence wavelength conversion |
| US9512970B2 (en) | 2013-03-15 | 2016-12-06 | Intematix Corporation | Photoluminescence wavelength conversion components |
| US9546765B2 (en) | 2010-10-05 | 2017-01-17 | Intematix Corporation | Diffuser component having scattering particles |
| US10557594B2 (en) | 2012-12-28 | 2020-02-11 | Intematix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
-
2004
- 2004-05-18 CA CA 2466979 patent/CA2466979A1/en not_active Abandoned
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008019041A3 (en) * | 2006-08-03 | 2008-10-30 | Intematix Corp | Led lighting arrangement including light emitting phosphor |
| CN101513120A (en) * | 2006-08-03 | 2009-08-19 | 英特曼帝克司公司 | LED lighting arrangement including light emitting phosphor |
| US8067884B2 (en) | 2006-08-03 | 2011-11-29 | Intematrix Corporation | LED lighting arrangement including a substantially spherical optical component having a surface partially coated with a light emitting phosphor |
| US9595644B2 (en) | 2006-08-03 | 2017-03-14 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
| US9045688B2 (en) | 2006-08-03 | 2015-06-02 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
| US8614539B2 (en) | 2010-10-05 | 2013-12-24 | Intematix Corporation | Wavelength conversion component with scattering particles |
| US8610340B2 (en) | 2010-10-05 | 2013-12-17 | Intematix Corporation | Solid-state light emitting devices and signage with photoluminescence wavelength conversion |
| US8957585B2 (en) | 2010-10-05 | 2015-02-17 | Intermatix Corporation | Solid-state light emitting devices with photoluminescence wavelength conversion |
| US8610341B2 (en) | 2010-10-05 | 2013-12-17 | Intematix Corporation | Wavelength conversion component |
| US9546765B2 (en) | 2010-10-05 | 2017-01-17 | Intematix Corporation | Diffuser component having scattering particles |
| US8604678B2 (en) | 2010-10-05 | 2013-12-10 | Intematix Corporation | Wavelength conversion component with a diffusing layer |
| US10557594B2 (en) | 2012-12-28 | 2020-02-11 | Intematix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
| US9512970B2 (en) | 2013-03-15 | 2016-12-06 | Intematix Corporation | Photoluminescence wavelength conversion components |
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