CA2454963A1 - Parallel, individually addressable probes for nanolithography - Google Patents
Parallel, individually addressable probes for nanolithography Download PDFInfo
- Publication number
- CA2454963A1 CA2454963A1 CA002454963A CA2454963A CA2454963A1 CA 2454963 A1 CA2454963 A1 CA 2454963A1 CA 002454963 A CA002454963 A CA 002454963A CA 2454963 A CA2454963 A CA 2454963A CA 2454963 A1 CA2454963 A1 CA 2454963A1
- Authority
- CA
- Canada
- Prior art keywords
- probe array
- nanolithography
- parallel
- individually addressable
- probe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000523 sample Substances 0.000 title abstract 7
- 238000005329 nanolithography Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N35/00—Automatic analysis not limited to methods or materials provided for in any single one of groups G01N1/00 - G01N33/00; Handling materials therefor
- G01N35/10—Devices for transferring samples or any liquids to, in, or from, the analysis apparatus, e.g. suction devices, injection devices
- G01N2035/1027—General features of the devices
- G01N2035/1034—Transferring microquantities of liquid
- G01N2035/1037—Using surface tension, e.g. pins or wires
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q80/00—Applications, other than SPM, of scanning-probe techniques
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
- Y10S977/857—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure including coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/86—Scanning probe structure
- Y10S977/874—Probe tip array
Abstract
A microfabricated probe array (32, 100) for nanolithography and process for designing and fabricating the probe array. The probe array (32, 100) consists of individual probes (35, 54, 72, 104) that can be moved independently using thermal bimetallic actuation or electrostatic actuation methods. The probe array (32, 100) can be used to produce traces of diffusively transferred chemicals (26) on a substrate (24) with sub-1 micrometer resolution, and can function as an arrayed scanning probe microscope for subsequent reading and variation of transferred patterns.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US30797601P | 2001-07-26 | 2001-07-26 | |
US60/307,976 | 2001-07-26 | ||
US10/008,719 | 2001-12-07 | ||
US10/008,719 US6642129B2 (en) | 2001-07-26 | 2001-12-07 | Parallel, individually addressable probes for nanolithography |
PCT/US2002/023626 WO2003036767A2 (en) | 2001-07-26 | 2002-07-26 | Parallel, individually addressable probes for nanolithography |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2454963A1 true CA2454963A1 (en) | 2003-05-01 |
CA2454963C CA2454963C (en) | 2009-09-15 |
Family
ID=26678522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002454963A Expired - Fee Related CA2454963C (en) | 2001-07-26 | 2002-07-26 | Parallel, individually addressable probes for nanolithography |
Country Status (11)
Country | Link |
---|---|
US (3) | US6642129B2 (en) |
EP (1) | EP1410436B1 (en) |
JP (2) | JP2005507175A (en) |
KR (1) | KR100961448B1 (en) |
CN (1) | CN1315169C (en) |
AT (1) | ATE412252T1 (en) |
AU (1) | AU2002360242B2 (en) |
CA (1) | CA2454963C (en) |
DE (1) | DE60229527D1 (en) |
ES (1) | ES2318060T3 (en) |
WO (1) | WO2003036767A2 (en) |
Families Citing this family (114)
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-
2001
- 2001-12-07 US US10/008,719 patent/US6642129B2/en not_active Expired - Fee Related
-
2002
- 2002-07-26 CN CNB028177150A patent/CN1315169C/en not_active Expired - Fee Related
- 2002-07-26 ES ES02795486T patent/ES2318060T3/en not_active Expired - Lifetime
- 2002-07-26 EP EP02795486A patent/EP1410436B1/en not_active Expired - Lifetime
- 2002-07-26 CA CA002454963A patent/CA2454963C/en not_active Expired - Fee Related
- 2002-07-26 AT AT02795486T patent/ATE412252T1/en not_active IP Right Cessation
- 2002-07-26 KR KR1020047001158A patent/KR100961448B1/en not_active IP Right Cessation
- 2002-07-26 JP JP2003539142A patent/JP2005507175A/en active Pending
- 2002-07-26 AU AU2002360242A patent/AU2002360242B2/en not_active Ceased
- 2002-07-26 DE DE60229527T patent/DE60229527D1/en not_active Expired - Lifetime
- 2002-07-26 WO PCT/US2002/023626 patent/WO2003036767A2/en active Application Filing
-
2003
- 2003-08-25 US US10/647,724 patent/US6867443B2/en not_active Expired - Fee Related
-
2005
- 2005-03-07 US US11/073,938 patent/US7402849B2/en not_active Expired - Fee Related
-
2009
- 2009-05-12 JP JP2009115268A patent/JP2009198513A/en not_active Ceased
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US7402849B2 (en) | 2008-07-22 |
DE60229527D1 (en) | 2008-12-04 |
CN1315169C (en) | 2007-05-09 |
JP2009198513A (en) | 2009-09-03 |
KR100961448B1 (en) | 2010-06-09 |
ATE412252T1 (en) | 2008-11-15 |
US20060082379A1 (en) | 2006-04-20 |
EP1410436A2 (en) | 2004-04-21 |
KR20040045418A (en) | 2004-06-01 |
WO2003036767A3 (en) | 2003-10-09 |
US6642129B2 (en) | 2003-11-04 |
CN1554119A (en) | 2004-12-08 |
AU2002360242B2 (en) | 2007-11-01 |
JP2005507175A (en) | 2005-03-10 |
US20030022470A1 (en) | 2003-01-30 |
ES2318060T3 (en) | 2009-05-01 |
CA2454963C (en) | 2009-09-15 |
US20040119490A1 (en) | 2004-06-24 |
WO2003036767A2 (en) | 2003-05-01 |
EP1410436B1 (en) | 2008-10-22 |
EP1410436A4 (en) | 2006-04-05 |
US6867443B2 (en) | 2005-03-15 |
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