CA2225930A1 - Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy - Google Patents

Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy

Info

Publication number
CA2225930A1
CA2225930A1 CA002225930A CA2225930A CA2225930A1 CA 2225930 A1 CA2225930 A1 CA 2225930A1 CA 002225930 A CA002225930 A CA 002225930A CA 2225930 A CA2225930 A CA 2225930A CA 2225930 A1 CA2225930 A1 CA 2225930A1
Authority
CA
Canada
Prior art keywords
integrated circuit
optoelectronic integrated
selective epitaxy
monolithic optoelectronic
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002225930A
Other languages
French (fr)
Other versions
CA2225930C (en
Inventor
Abhay M. Joshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Discovery Semiconductors Inc
Original Assignee
Discovery Semiconductors, Inc.
Abhay M. Joshi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Discovery Semiconductors, Inc., Abhay M. Joshi filed Critical Discovery Semiconductors, Inc.
Publication of CA2225930A1 publication Critical patent/CA2225930A1/en
Application granted granted Critical
Publication of CA2225930C publication Critical patent/CA2225930C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration

Abstract

A monolithic Optoelectronic Integrated Circuit including a photodiode and a CMOS readout circuit is described in which the diode is formed by compositionally graded layers of In x Ga1-x As selectively epitaxially grown between a substrate of Si and an absorption layer of In x Ga1-x As, the areas of said layers being less than 500 µm2 and wherein a readout circuit on said substrate is coupled to said diode.
CA002225930A 1995-07-18 1996-06-26 Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy Expired - Fee Related CA2225930C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/503,726 1995-07-18
US08/503,726 US5621227A (en) 1995-07-18 1995-07-18 Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy
PCT/US1996/010916 WO1997004493A1 (en) 1995-07-18 1996-06-26 Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy

Publications (2)

Publication Number Publication Date
CA2225930A1 true CA2225930A1 (en) 1997-02-06
CA2225930C CA2225930C (en) 2001-03-27

Family

ID=24003266

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002225930A Expired - Fee Related CA2225930C (en) 1995-07-18 1996-06-26 Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy

Country Status (6)

Country Link
US (1) US5621227A (en)
EP (1) EP0839391A4 (en)
JP (1) JP2993741B2 (en)
AU (1) AU6290896A (en)
CA (1) CA2225930C (en)
WO (1) WO1997004493A1 (en)

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6005263A (en) * 1995-03-27 1999-12-21 Kabushiki Kaisha Toshiba Light emitter with lowered heterojunction interface barrier
US5682455A (en) * 1996-02-29 1997-10-28 Northern Telecom Limited Semiconductor optical waveguide
US5877519A (en) * 1997-03-26 1999-03-02 Picolight Incoporated Extended wavelength opto-electronic devices
US5804869A (en) * 1997-03-31 1998-09-08 Motorola, Inc. Clamp disposed at edge of a dielectric structure in a semiconductor device and method of forming same
ATE316323T1 (en) * 1997-10-27 2006-02-15 Discovery Semiconductors Inc MICROSATELLITES WITH INTEGRATED CIRCUITS
US6326654B1 (en) * 1999-02-05 2001-12-04 The United States Of America As Represented By The Secretary Of The Air Force Hybrid ultraviolet detector
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6653706B1 (en) * 2000-05-08 2003-11-25 The Board Of Trustees Of The Leland Stanford Junior University Low temperature grown optical detector
US6406929B1 (en) * 2000-06-21 2002-06-18 University Of Vermont And State Agricultural College Structure and method for abrupt PN junction diode formed using chemical vapor deposition processing
US6580139B1 (en) 2000-07-20 2003-06-17 Emcore Corporation Monolithically integrated sensing device and method of manufacture
GB2367945B (en) * 2000-08-16 2004-10-20 Secr Defence Photodetector circuit
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6589335B2 (en) * 2001-02-08 2003-07-08 Amberwave Systems Corporation Relaxed InxGa1-xAs layers integrated with Si
US6594293B1 (en) 2001-02-08 2003-07-15 Amberwave Systems Corporation Relaxed InxGa1-xAs layers integrated with Si
AU2002241984A1 (en) * 2001-02-08 2002-08-19 Amberwave Systems Corporation Relaxed inxga1-xas layers integrated with si
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6646293B2 (en) * 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US7019332B2 (en) * 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
GB0216069D0 (en) 2002-07-11 2002-08-21 Qinetiq Ltd Photodetector circuits
GB2411520A (en) * 2004-02-25 2005-08-31 Agilent Technologies Inc Method of forming laser mesa by reactive ion etching followed by in situ etching in regrowth reactor
US8963169B2 (en) 2004-07-28 2015-02-24 Quantum Semiconductor Llc CMOS pixels comprising epitaxial layers for light-sensing and light emission
US7329465B2 (en) * 2004-10-29 2008-02-12 3M Innovative Properties Company Optical films incorporating cyclic olefin copolymers
WO2006125040A2 (en) * 2005-05-17 2006-11-23 Amberwave Systems Corporation Lattice-mismatched semiconductor structures with reduced dislocation defect densities related methods for device fabrication
US20070267722A1 (en) * 2006-05-17 2007-11-22 Amberwave Systems Corporation Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
WO2007014294A2 (en) * 2005-07-26 2007-02-01 Amberwave Systems Corporation Solutions integrated circuit integration of alternative active area materials
US20070054467A1 (en) * 2005-09-07 2007-03-08 Amberwave Systems Corporation Methods for integrating lattice-mismatched semiconductor structure on insulators
US7638842B2 (en) * 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
WO2007112066A2 (en) * 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
US20080070355A1 (en) * 2006-09-18 2008-03-20 Amberwave Systems Corporation Aspect ratio trapping for mixed signal applications
US7799592B2 (en) * 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
GB2443677B (en) * 2006-11-07 2011-06-08 Filtronic Compound Semiconductors Ltd A capacitor
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
DE112008002387B4 (en) 2007-09-07 2022-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Structure of a multijunction solar cell, method of forming a photonic device, photovoltaic multijunction cell and photovoltaic multijunction cell device,
US8611756B1 (en) * 2008-04-16 2013-12-17 Cirrex Systems, Llc Highly integrated system and method for optical communication
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
WO2010033813A2 (en) 2008-09-19 2010-03-25 Amberwave System Corporation Formation of devices by epitaxial layer overgrowth
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
US8816391B2 (en) * 2009-04-01 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain engineering of devices with high-mobility channels
CN101853882B (en) 2009-04-01 2016-03-23 台湾积体电路制造股份有限公司 There is the high-mobility multiple-gate transistor of the switch current ratio of improvement
CN102379046B (en) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 Devices formed from a non-polar plane of a crystalline material and method of making the same
US8455860B2 (en) 2009-04-30 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing source/drain resistance of III-V based transistors
US9768305B2 (en) 2009-05-29 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Gradient ternary or quaternary multiple-gate transistor
US8617976B2 (en) 2009-06-01 2013-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain re-growth for manufacturing III-V based transistors
WO2010140373A1 (en) * 2009-06-05 2010-12-09 住友化学株式会社 Sensor, semiconductor substrate, and method for manufacturing semiconductor substrate
SG169922A1 (en) * 2009-09-24 2011-04-29 Taiwan Semiconductor Mfg Improved semiconductor sensor structures with reduced dislocation defect densities and related methods for the same
US8455929B2 (en) 2010-06-30 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of III-V based devices on semiconductor substrates
US9693714B2 (en) 2012-02-10 2017-07-04 Senseonics, Incorporated Digital ASIC sensor platform
EP3224866B8 (en) * 2014-11-24 2019-02-27 Artilux Inc. Monolithic integration techniques for fabricating photodetectors with transistors on same substrate
US9508550B2 (en) * 2015-04-28 2016-11-29 International Business Machines Corporation Preparation of low defect density of III-V on Si for device fabrication
WO2016181391A1 (en) * 2015-05-11 2016-11-17 Technion Research & Development Foundation Limited Image sensor and method of fabricating the same
TW202029708A (en) 2019-01-16 2020-08-01 美商萊特美特股份有限公司 Optical differential low-noise receivers and related methods
FR3095279B1 (en) * 2019-04-18 2021-05-21 Commissariat Energie Atomique REFLECTOR DEVICE
JP2022543366A (en) 2019-07-29 2022-10-12 ライトマター インコーポレイテッド Systems and methods for analog computing using linear photonic processors
CN115023909A (en) 2019-11-22 2022-09-06 光物质公司 Linear optical processor and related method
TW202220401A (en) 2020-07-24 2022-05-16 美商萊特美特股份有限公司 Systems and methods for utilizing photonic degrees of freedom in a photonic processor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61104658A (en) * 1984-10-29 1986-05-22 Hitachi Ltd Array of semiconductor solid-state image pickup element
CA1301897C (en) * 1988-02-29 1992-05-26 Goro Sasaki Method for producing an opto-electronic integrated circuit
JP2817995B2 (en) * 1990-03-15 1998-10-30 富士通株式会社 III-V compound semiconductor heterostructure substrate and III-V compound heterostructure semiconductor device
KR950000522B1 (en) * 1991-11-25 1995-01-24 재단법인 한국전자통신연구소 Photo electro integrated device and manufacturing method thereof
US5387796A (en) * 1993-05-26 1995-02-07 Epitaxx, Inc. Low leakage current photodetector arrays

Also Published As

Publication number Publication date
JPH10511815A (en) 1998-11-10
EP0839391A1 (en) 1998-05-06
JP2993741B2 (en) 1999-12-27
EP0839391A4 (en) 1999-03-17
CA2225930C (en) 2001-03-27
US5621227A (en) 1997-04-15
AU6290896A (en) 1997-02-18
WO1997004493A1 (en) 1997-02-06

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