CA2191355A1 - Force detecting sensor and method of making - Google Patents
Force detecting sensor and method of makingInfo
- Publication number
- CA2191355A1 CA2191355A1 CA002191355A CA2191355A CA2191355A1 CA 2191355 A1 CA2191355 A1 CA 2191355A1 CA 002191355 A CA002191355 A CA 002191355A CA 2191355 A CA2191355 A CA 2191355A CA 2191355 A1 CA2191355 A1 CA 2191355A1
- Authority
- CA
- Canada
- Prior art keywords
- electrode
- substrate
- insulating layer
- indium
- support layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/005—Measuring force or stress, in general by electrical means and not provided for in G01L1/06 - G01L1/22
Abstract
A force detecting microsensor comprises a single crystal Si substrate, a single crystal cone formed on the substrate and a resilient electrode mounted above the tip of the Si cone. The space between the tip of the Si cone and the resilient electrode is maintained in a vacuum environment and the distance between the tip and the resilient anode is in the order of a few atomic diameters. The tunneling effect of electrons occurs between the tip of the Si cone and the resilient electrode when a potential is applied to the resilient electrode and the Si cone tip.
The resilient electrode deflects as a result of the force acting on the microsensor.
The deflection of the resilient electrode alters the electrical characteristics between the resilient electrode and the Si cone tip. The changes in the electrical characteristics can be measured to determine the level of force acting on the microsensor. The process for making the microsensor according to the invention comprises the steps of forming an insulating layer and support layer on the substrate, forming a recess in the insulating layer and aperture in the support layer, depositing a single crystal Si cone on the substrate and fully enclosing the Si cone within the recess of the support layer and the insulating layer.
The resilient electrode deflects as a result of the force acting on the microsensor.
The deflection of the resilient electrode alters the electrical characteristics between the resilient electrode and the Si cone tip. The changes in the electrical characteristics can be measured to determine the level of force acting on the microsensor. The process for making the microsensor according to the invention comprises the steps of forming an insulating layer and support layer on the substrate, forming a recess in the insulating layer and aperture in the support layer, depositing a single crystal Si cone on the substrate and fully enclosing the Si cone within the recess of the support layer and the insulating layer.
Description
. --1--FORCE DETECTING SENSOR AND METHOD OF MAKING
B~.k~ound of the Invention Field of the Invention This invention relates to a force detecting sensors and method for 5 making such sensors and, more particularly, to cold-cathode microsensors.
Description of Related Art Force detecting sensors are an integral component of a wide variety of control systems such as accelerometers, pressure sensors, tactile sensors andvibration sensors. In many applications, such as an accelerometer for spacecraft10 navigational systems, minimi7ing the weight and size of the force detecting sensor is critical. In addition, force sensors are preferably relatively low cost items produced by cost effective processes.
Force sensors typically include a movable member which is deflected when a force, e.g., the force of acceleration, is applied to the movable member.15 An electrical circuit senses the amount of displacement or change of position of the movable member and generates an output signal indicative of the applied force.
Integrated circuit technology is used in the production of small scale, highly sensitive force sensors. A number of studies have been made in recent years in the field of cold-cathode solid state microsensors in which the movable member is used 20 as an electrode and variations in current flow or field strength between the movable member and fixed electrode are used as a measure of displacement of the movable member. The so-called electron tunneling effect may be used to detect very smalldisplacements.
Electron tunneling was first observed in the 1950s and since has been 25 incorporated into numerous solid state structures. Electron tunneling occurs when potential is applied between conducting electrodes separated by a few atomic diameters within a vacuum ellvilolllllent and increases with decreasing electrode separation. A vacuum tunnel junction is one of the most sensitive position-detection mech~ni~m~ available. For example, a decrease in electrode separation in a vacuum 30 tunnel junction of approximately 3 Angstroms produces a thousand-fold increase in electron tunnel current.
_ --2--In an article by Kenny et al. entitled "A Micro Machine Silicon Electron Tunneling Sensor", IEEE, April 1990, p. 192, the authors disclose a prototype position-detection mechanism employing the electron tunneling effect to detect displacement. One described arrangement incorporates an all-mimlm 5 mounting block to support a piezoelectric cantilever having a gold film electrode spaced apart from a gold, cold-cathode tunneling tip. This piezoelectric system is difficult and expensive to fabricate. In addition, the system is extremely sensitive to thermal drifts and hysteresis. Sensors having metal cathode emitters also sufferfrom the adsorption of work function raising impurities on the surface of the 10 emitter. In addition, thermal mi~m:~tch between the metal cathode and the substrate can lead to cathode failure.
Kenny et al. further disclose a micro-machined Si wafer tunnel sensor composed of single crystals of Si. A folded cantilever spring of Si is created in a single Si wafer by etching. A gold film is evaporated onto the spring to make 15 electrical contact to the tunneling electrode and a tunnel tip is formed by applying indium solder with an iron and then evaporating a gold film over it. According to the authors, the actual shape of the electrode in this structure is unimportant.A theoretical study for field emission emitter array diodes is discussed by Lee et al. in "A Theoretical Study on Field Emission Array For 20 Microsensors", IEEE Transactions on Electron Devices, Vol. 39, No. 2, p. 313,February 1992. The proposed structure disclosed in the theoretical study comprises a plurality of cone or wedge-shaped emitter arrays mounted below a single Si diaphragm.
What is not seen in the prior art of microsensors is a force detecting 25 sensor which is practical to m~mlfacture and not cost prohibitive, but which will supply the n~cess~ry sensiLiviLy required for use in accelerometers, microsensors and vibration sensors.
Summary of Invention The microsensor according to the invention comprises an electrically 30 conductive substrate, a resilient electrode spaced apart from the substrate and a single crystal stationary electrode in electrical contact with the substrate andcomprising an electrode tip extending toward the resilient electrode and spaced apart from the resilient electrode by a predetermined distance. In one embodiment of the invention, an in.cnl~ting layer is disposed between the substMte and the resilient electrode, and the stationary electrode is disposed in a recess of the insulating layer.
Electrical terminals, connected to the resilient electrode and the substrate, provide 5 connection to an electrical circuit whereby the force applied to the sensor can be measured on the basis of the change in electrical characteristics between the resilient electrode and the substrate due to changes in the predetermined distance resulting from deflection of the resilient electrode.
In a particular embodiment of the invention, the resilient electrode 10 comprises a cantilever arm disposed between the first inclll~ting layer and a second insulating layer. A second recess is formed in the second insulating layer above the cantilever arm permitting movement of the cantilever arm. An upper layer is formed on the second inclll~ting layer thereby fully enclosing the cantilever arm within the first and second recesses.
The microsensor according to the invention is formed by a process comprising the steps of forming a first layer of insulating material and a supporting layer on the substrate. The first layer of insulating material is disposed between the substrate and the supporting layer. An aperture is formed in the supporting layer, and a recess is formed in the incnl~ting material adjacent the aperture to expose a 20 portion of the substrate. A stream of semiconductor atoms is directed at the aperture in a direction substantially normal to the exposed portion of the substrate to epitaxially grow a single crystal semiconductor electrode on the substrate. In accordance with one aspect of the invention, the aperture closes in the process of forming the stationary electrode causing the stationary electrode to be formed in the 25 shape of a cone, thereby facilit~ting the flow of tunneling current between the electrodes. The process may be performed in a vacuum in the range of 10-1~ to 10-8 Torr, and the aperture is closed in the process to provide a vacuum environment for the electrodes. Furthermore, the process described above can be modified to create a cone having a diameter smaller than the diameter of the aperture. The insulating 30 layer and support layer are formed on the substrate as described above. In addition, the aperture and recess are formed in the support layer and insulating layer as described above. Thereafter, a stream of semiconductor atoms is directed at the aperture and the support layer at an acute angle with respect to the plane of the substrate, causing atoms to be deposited on the support layer and around the aperture thereby narrowing the aperture. After the diameter of the aperture has been narrowed sufficiently, the stream of atoms is directed at the substrate and the support layer at an angle substantially normal to the plane of the support layer and substrate thereby forming the cone and closing the aperture.
In one embodiment of the invention, the process of the invention is used to produce an array of individual sensors by forming a plurality of single crystal electrodes on the substrate and a corresponding plurality of resilient electrodes. The stationary electrodes of the array are connected in parallel, and the resilient electrodes are connected in parallel to form a multielectrode sensor. Such a sensor advantageously provides greater current variations with changes in applied force and provides re~llln(l~ncy which alleviates yield and device failure problems.
Brief Des~ ,lion of the Drawin~
The invention will now be described with reference to the drawings wherein:
FIG. 1 is a perspective view of a first embodiment of a microsensor according to the invention;
FIG. 2 is a partial sectional, perspective view of the microsensor as seen in FIG. 1;
FIG. 3 is a sectional view of a partially completed microsensor after a first step in the method of making a microsensor according to the invention, namely forming an in~ul~ting layer on the base member;
FIG. 4 is a sectional view of a partially completed microsensor after an intermediate step in the method of making a microsensor according to the invention, namely forming a support layer on the in~ul~ting layer and forming anaperture in the support layer and insulating layer;
FIG. 5 is a sectional view of a partially completed microsensor after a further step in the method of making a microsensor, namely forming a recess inthe in~ul~ting layer;
FIGS. 6 and 7 are sectional views of the a partially completed microsensor in a further step in the method of making a microsensor according tothe invention, namely depositing silicon or gallium arsenide on the base member 2~913S~
and support layer to create a cone on the base member and close the aperture in the support layer;
FIG. 8 is a selectional view of the first embodiment of the microsensor according to the invention;
FIG. 9 is a selectional view of a partially completed microsensor showing a step in the method of making a second embodiment of the microsensor according to the invention, namely depositing a second insulating layer on the membrane;
FIG. 10 is a selectional view of a second embodiment of the microsensor according to the invention having a cantilever arm anode;
FIG. 11 is a top view of the cantilever arm of the second embodiment of the microsensor according to the invention;
FIG. 12 is a partial sectional view of a microsensor showing a step in the method of making a third embodiment of the microsensor according to the invention, namely narrowing the aperture in the support layer prior to deposition of the Si cone;
FIG. 13 is a sectional view of a third embodiment of a microsensor according to the invention; and FIG. 14 is a plan view of a sensor array comprising a plurality of sensors.
Description of the Preferred Embodiment Referring now to the drawings, and to FIGS. 1 and 2 in particular, a microsensor 12 according to the invention comprises a conductive substrate 14 and a cone 16 formed on the substrate 14. A conductive top member 18 supported above the cone 16, forms the movable deflection member and serves as one of the electrodes of the tunnel sensor. An insulating layer 20 is formed on the substrate 14. A recess 22 is formed in the insulating layer 20 and the cone 16 is disposedwithin the recess 22. A support layer 24 is formed on the insulating layer 20 such that the support layer 24 is disposed between the insulating layer 20 and the top member 18. An aperture 26 is formed in the support layer 24 immediately adjacentthe tip of the cone 16. The support layer 24 is covered by the top member 18 andthe aperture 26 is substantially filled by a membrane 27.
The first embodiment of the microsensor 12 according to the invention is suitable for a use in detecting forces applied to the membrane such as acceleration, pressure and vibration.
The substrate 14 and cone 16 are preferably formed of conductive 5 material. This material may be an elemental semiconductor such as Si or a compound semiconductor such as GaAs, AlGaAs, GaP, InP, InSb, InGaAs, InAs, GaSb or AlSb. The microsensor may have an elemental semiconductor cone formed on an elemental semiconductor substrate (e.g. Si cone on Si substrate), acompound semiconductor cone formed on a compound semiconductor substrate (e.g.
10 GaAs cone on a GaAs substrate), or a compound semiconductor cone formed on a compound semiconductor layer which is in turn formed on a elemental semiconductor substrate (e.g. a GaAs cone formed on a GaAs conductive layer which is in turn formed on a Si substrate).
The plerell~d embodiment of the microsensor according to invention 15 comprises a Si cone formed on a Si substrate and the following description of the preferred embodiment shall be directed to this structure, it being understood that the above-described semiconductors may be substituted therefore.
The insulating layer 20 of the pl~felled embodiment is preferably SiO2. The support layer 24 is preferably formed of a poly-Si or Si3N4 and the top 20 layer 18 is preferably formed of poly-Si.
A constant voltage power source 30 has a positive terminal 32 conn~ctecl to the top member 18 and a negative terminal 34 connected via the substrate 14 to the cone 16. With this arrangement, the top member 18 is the anode and the cone 16 is the cathode of the sensor. The recess 22 is m~int~in~d at a 25 vacuum on the order of 10-6 Torr and the distance between the tip of the cone 16 and the membrane 27 of the top member 18 may be from 0.25 to 2.00 micrometers.
The potential required for tunneling depends on the distance between the cathodeand the anode, the shape of the cathode and the work function of the cathode material. The tunneling effect between the Si cathode cone 16 and the anode top 30 member 18, separated by a distance in the specified range, occurs when a potential in the range of 15 to 100 volts is supplied by the power source 30.
As a force is applied substantially normally to membrane 27, the membrane 27 is displaced such that the spacing between the membrane 27 and the 21~135~
cone 16 changes and the m~gnit~lde of the tunneling current changes as the membrane 27 moves relative to the cone 16. The change in electron current can bereadily detçcted by a known current sensor 36 providing an electrical output signal indicative of the applied force since the tunneling current varies with the change in 5 spacing in a known manner.
The process for m~nllf~cturing the first embodiment of the microsensor 12 shown in FIGS. 1 and 2 is seen in FIGS. 3-8. As shown in FIG. 3, the first step in the process for making a microsensor 12 according to the invention is forming the in~ ting layer 20 on one surface of the Si substrate 14. The 10 insulating layer 20, preferably SiO2, is thermally grown or deposited on the substrate 14 in a well-known fashion in an oxide environment. In the pler~ d embodiment, the oxide layer is in the range of 1.5 to 2.5 microns thick.
The next step in the process, as seen in FIG. 4, is depositing a polycrystalline film support layer 24 on the in~ ting layer 20 such that the 15 insulating layer 20 is disposed between the substrate and the support layer 24.
Preferably, the support layer 24 is a poly-Si film in the range of 0.8 to 1.5 microns thick and deposited on the insulating layer by a well-known chemical vapor deposition process.
Next, as shown in FIG. 5, the aperture 26 is formed in the support 20 layer 24 and the recess 22 is formed in the insulating layer 20. Preferably the aperture 26 is circular and is in the range of 0.5 to 2.5 microns in diameter. The aperture 26 is preferably formed by dry etching the polycrystalline support layer 24 to form well defined edges and the recess 22 is preferably formed in the oxide insulating layer 20 by wet etching. The recess 22 is preferably circular and has a 25 diameter W but could be any shape. The etching process exposes a portion of the surface of the substrate 14.
The next step in the method of making the microsensor 12 according to the invention is the growth of the Si cone 16 and the top member 18, as shown in FIGS. 6-8. The structure of the substrate 14, the insulating layer 20 and support 30 layer 24 mounted thereon is placed in a vacuum chamber with a background pressure in the range of 10-1~ to 10-8 Torr. The Si cone 16 is epitaxially grown on the substrate 14 using a known Molecular Beam Epitaxial (MBE) crystal growing process. The substrate 14 is preferably a single crystal highly n-doped Si substrate.
219i35~
A suitable substrate is a single crystal Si wafer having impurities in the range of 5 x 1019 to 7 x 102~ impulilies per cubic centimeter. Such substrates are commercially available and may be purchased from Wacker Siltronic Corp. of Portland, Oregon.
A well-known Si source 40 in the vacuum chamber emits a stream of Si atoms. The stream of atoms are directed at the aperture 26 substantially perpendicular to the plane of the substrate 14. The substrate is heated to a temperature in the range of 800-900~C and emitted Si atoms traveling through aperture 26 epitaxially grow a single crystal structure on the substrate 14. Fmittç~l atoms deposited on the polycrystalline support layer 24 will tend to grow a polycrystalline top member 18.
It is desirable to epitaxially grow an n-doped cone and doping of the cone is accomplished by introducing a suitable doping element, such as phosphorus into the emitter. This results in the introduction of phosphorus atoms into the stream of Si atoms being deposited on the substrate 14 and the support layer 24.The amount of phosphorus atoms present in the stream of Si atoms depends upon the vapor pressure of phosphorus within the emitter. Through this process, doping of the cone is done in situ. The doping can be con~llcte~l with any n-doping element.
As seen in FIG. 6, the diameter, b, of the base of the cone 16 is substantially equal to the diameter of the aperture 26. As the Si atoms are deposited on the support layer 24, the diameter of the aperture 26 decreases as seen in FIG.
7. Fewer atoms pass through the aperture and are deposited on the substrate 14 as the aperture 26 gets progressively smaller. This ever decreasing diameter of theaperture 26 results in an ever decreasing area of deposition within the recess 22 and forms a cone-shaped cathode 16. As the deposition of Si continues, the aperture will eventually close, thereby enclosing the cone 16 within the recess 22, as seen in FIG. 8. The cone growth process is conducted in a vacuum environment and the vacuum is m:~int~in~d within the recess 22 because the cone is sealed within therecess 22.
The important parameters which determine circular plate deflections and vibration modes of the membrane 27 surrounding the aperture 26 are the thickness, diameter, material properties, and boundary conditions. The deflection 219i3~5 .~ g and vibration motion of the thin circular membrane 27 is characterized by a mllltitude of circular and diametrical natural mode shapes at differing frequencies.
The combination of various mode shapes will influence the membrane-to-tip tunnelgap in response to acceleration. This multi-mode response can be simplified by 5 depositing a circular mass 28 (FIG. 1) on top of the plate centered over the tip.
Under acceleration, this mass causes a radially symmetric loading of the plate which helps elimin~te ullw~llL~d modes. The deposition of the circular mass 28 can be done using standard integrated chip technology.
A second embodiment of the microsensor according to the invention, 10 and the process for making the same is seen in FIGS. 9-11. As seen in FIG. 10, the second embodiment of the microsensor 112 comprises a conductive substrate 114, a cone 116 formed on the substrate 114 and a cantilever arm 118 supported above the cone 116. In this embodiment, the cantilever arm 118 comprises one electrode and the cone 116 via the substrate 114 comprises the other electrode of the 15 microsensor. This sensor has primary application as an accelerometer in whichacceleration can be determined from deflection of the cantilever arm 118 relative to the cone 116.
Referring to FIG. 9, a first insulating layer 120 is formed on the substrate 114 and a support layer 122 is formed on the first in~ ting layer 120 by 20 the same process described earlier in the first embodiment. Similarly, the cone 116 is formed on the substrate 114 and an upper layer 117 is formed on the support layer 122 by the previously described processes. After the upper layer 117 has been deposited, a second in~ ting layer 124 is formed on the upper layer in an oxide environment such that the upper layer 117 is disposed between the second 25 in~ ting layer 124 and the support layer 122. The substrate 114 and the cone 116 consist of single crystal Si and the upper layer 117 consists of polycrystalline Si.
The first and second insulating layers 120, 124, are preferably SiO2 which is formed by heating the microsensor in an oxide ellvholllllent in a well-known manner. Inthe preferred embodiment, the second insulating layer is approximately 3.0 to 5.0 30 microns thick.
Next, a second recess 128 is formed in the second insulating layer 124. The second recess 128 is formed by wet etching the second insulating layer 124 with HF. The wet etching process does not remove or damage any of the exposed upper layer 117. After the creation of the second recess 128, the upper layer 117 is subjected to a dry etching procedure to create the cantilever arm 118.
As seen in FIGS. 9 and 10, the cantilever arm 118 extends into the opening created by the first recess 126 and second recess 128. The cantilever arm 118 is suspended above the Si cone 116.
After the formulation of the cantilever arm 118, the top member 130 is formed on the microsensor 112. Preferably, the top member 130 comprises a glass plate secured to the second in~ ting layer 124. The top member 130 is mounted on the microsensor 112 in a vacuum environment of approximately 10-6 Torr. Finally, the substrate 14 is electrically connected to the negative terminal 134 of a power source 132 and the cantilever arm 118 is electrically connected to the positive terminal 136 of the power source 132. With this arrangement, the cantilever arm 118 is the anode and the cone 16 comprises the cathode. In light of the vacuum environment in the recesses 126, 128 and the spacing in the range of 0.25 to 2.0 micrometers between the cathode cone 116 and the anode cantilever arm 118, a tunneling effect of electrons results when a potential in the range of 15 to 100 volts is supplied by the power source 132.
The tunneling current between the cathode cone 116 and the anode cantilevered arm 118 will vary as a result of a change in the spacing between the cone 116 and the cantilever arm 118. The cantilever arm 118 flexes as a result of the force applied substantially normal to the cantilever arm 118 and the currentchanges as a result of the change in spacing between the anode and the cathode.
These changes in current can be readily detected by the current sensor 138 in a known manner to provide an output signal indicative of the applied force.
The process for making the microsensor according to the invention can be modified to create cones of varying size in relation to the size of the aperture. As seen in FIG. 6, the diameter b of the base of the cone 16 of the first embodiment is substantially equal to the diameter of the aperture 26 in the support layer 24. A method for making a cone having a diameter b smaller than the diameter of the aperture is described with reference to FIGS. 12 and 13. A thirdembodiment of a microsensor according to the invention and having a relatively smaller cone is shown in FIG. 13.
As in the first embodiment, the process for making the third embodiment of the microsensor 212 comprises the steps of forming a first insulating layer 216 on the substrate 214 and then forming a support layer 222 on the insulating layer 216 such that the insulating layer 216 is disposed between the 5 support layer 222 and the substrate 214. Next, an aperture 226 having a diameter d is formed in the support layer 222 and the insulating layer 216, as previously described for the first embodiment. Next, the recess 218 is formed in the first insulating layer 216 pursuant to the previously described wet etching process.
A stream of Si atoms are directed at the support layer 222 and the 10 aperture 226 from a non-aligned emitter 240 as depicted in FIG. 12. The grazing incidence between the plane of the support layer 222 and the direction of the emitter 240 is an acute angle which permits deposition of the Si atoms on the support layer and surrounding the aperture 226, but prevents deposition within the area of thecone in the recess 218. In the preferred embodiment, this angle is approximately 15 15 degrees. As the stream of Si atoms are directed at the support layer 222 and the aperture 226, the microsensor 212 is rotated relative to the emitter 240.
Alternatively, the emitter 240 could be rotated relative to the microsensor 212. In this particular orientation of the emitter 240, the Si atoms are deposited on the support layer 222 and the aperture 226. However, no appreciable amounts of Si 20 atoms are deposited on the substrate 214. With the deposition on the support layer 222, the diameter d of the aperture is decreased. Next, a stream of Si atoms aredirected at the substrate 214, support layer 222 and aperture 226 at a directionsubstantially normal to the substrate 214 as depicted in FIG. 13. As described earlier, this results in the epitaxial growth of a cone 220 immediately below the 25 aperture 226 and the deposition of the membrane 230. However, because the diameter of the aperture 226 has been decreased, the diameter b of the cone 220 is substantially equal to the reduced diameter of the aperture 226. Through the narrowing of the aperture prior to growth of the cone, a greater spacing between the membrane 230 and the tip of the cone 220 is achieved without reduction of the 30 diameter of the membrane 230.
As stated earlier, the potential requirement for the tunneling of electrons between the tip of the cathode cone and the anode is dependent upon the shape of the cathode cone. A cone with a sharp tip will result in a lower required potential than a dull tip. The Si cone of the microsensor according to the invention can be sharpened after deposition of the cone to create a more responsive microsensor suitable for operation at a lower anode voltage. The sharpening process begins after the deposition of the cone 16 and the top member 18.
Referring to FIG. 7, once the cone 16 has been deposited, the top member 18 can be removed by wet etching. This exposes the cone 16. Next, the microsensor 12 isthermally heated and subjected to an oxide environment in a well-known manner.
Si02 forms on the entire surface of the cone 16. After the formation of an initial layer of Si02, oxygen continues to move through the oxide layer to react with the Si to create Si02. The oxygen moves inwardly through the Si02 layer at a slower rate at the tip of the cone because of the inherent stresses within the structure of the Si atoms at the tip. Therefore, the thickness of the oxide layer adjacent the base and along the sides of the cone 16 will be thicker than at the tip. Finally, the oxide is removed by a wet etching process resulting in a cone having a sharp tip. In practice, tips having a radius of 10 Angstroms can be obtained utili7.ing the sharpening process.
After the tip has been sharpened, the top member 18 must be reapplied to the support layer 24. The top member 18 is applied by directing a stream of Si atoms at the support layer 24 and the aperture 26 at an acute angleresulting in deposition of Si atoms only on the support layer 24, in the manner described earlier with reference to FIG. 11. The microsensor is rotated relative to the emitter 40 during the deposition to obtain a uniform layer of Si which fullyencloses the cone within the recess 22. Once again, this evaporation process is conducted in a vacuum environment resulting in a vacuum within recess 22.
FIG. 14 shows a sensor array 300 a plurality which may be produced using the processes described herein as a single device having a plurality of individual sensors 301. Each of the sensors may be a sensor of the type as shownfor example in FIGS. 1, 2 and 10. The array may be made to various sizes with several hundred or several thousand individual sensors. Depending on the actual size of each of the sensors, several thousand of the sensors may be formed in a single array which measures less than 1 square centimeter. The entire array is formed in one process, the stationary cone electrodes are all formed on a commonsubstrate and the flexible membrane electrodes are all formed in a layer of 2 1 9 1 3$5 semiconductor material. Consequently, the membranes and the cones of the plurality of individual sensors are effectively connected in parallel. A single output conductor 305 is cormected to the top layer forming the membranes and a single output conductor 306 is connected to the common substrate. The multiple sensor S array provides a greater sensor output current and small variations in the applied force, e.g. an acceleration force, are more readily detectable. Furthermore, themultiple sensor array provides a redlln~n~y which reduces the sensitivity to yield and failure problems.
While particular embodiments of the invention have been shown, it 10 will be understood, of course, that the invention is not limited thereto since modifications may be made by those skilled in the art, particularly in light of the foregoing teachings. Reasonable variation and modification are possible within the scope of the foregoing disclosure of the invention without departing from the spirit of the invention.
B~.k~ound of the Invention Field of the Invention This invention relates to a force detecting sensors and method for 5 making such sensors and, more particularly, to cold-cathode microsensors.
Description of Related Art Force detecting sensors are an integral component of a wide variety of control systems such as accelerometers, pressure sensors, tactile sensors andvibration sensors. In many applications, such as an accelerometer for spacecraft10 navigational systems, minimi7ing the weight and size of the force detecting sensor is critical. In addition, force sensors are preferably relatively low cost items produced by cost effective processes.
Force sensors typically include a movable member which is deflected when a force, e.g., the force of acceleration, is applied to the movable member.15 An electrical circuit senses the amount of displacement or change of position of the movable member and generates an output signal indicative of the applied force.
Integrated circuit technology is used in the production of small scale, highly sensitive force sensors. A number of studies have been made in recent years in the field of cold-cathode solid state microsensors in which the movable member is used 20 as an electrode and variations in current flow or field strength between the movable member and fixed electrode are used as a measure of displacement of the movable member. The so-called electron tunneling effect may be used to detect very smalldisplacements.
Electron tunneling was first observed in the 1950s and since has been 25 incorporated into numerous solid state structures. Electron tunneling occurs when potential is applied between conducting electrodes separated by a few atomic diameters within a vacuum ellvilolllllent and increases with decreasing electrode separation. A vacuum tunnel junction is one of the most sensitive position-detection mech~ni~m~ available. For example, a decrease in electrode separation in a vacuum 30 tunnel junction of approximately 3 Angstroms produces a thousand-fold increase in electron tunnel current.
_ --2--In an article by Kenny et al. entitled "A Micro Machine Silicon Electron Tunneling Sensor", IEEE, April 1990, p. 192, the authors disclose a prototype position-detection mechanism employing the electron tunneling effect to detect displacement. One described arrangement incorporates an all-mimlm 5 mounting block to support a piezoelectric cantilever having a gold film electrode spaced apart from a gold, cold-cathode tunneling tip. This piezoelectric system is difficult and expensive to fabricate. In addition, the system is extremely sensitive to thermal drifts and hysteresis. Sensors having metal cathode emitters also sufferfrom the adsorption of work function raising impurities on the surface of the 10 emitter. In addition, thermal mi~m:~tch between the metal cathode and the substrate can lead to cathode failure.
Kenny et al. further disclose a micro-machined Si wafer tunnel sensor composed of single crystals of Si. A folded cantilever spring of Si is created in a single Si wafer by etching. A gold film is evaporated onto the spring to make 15 electrical contact to the tunneling electrode and a tunnel tip is formed by applying indium solder with an iron and then evaporating a gold film over it. According to the authors, the actual shape of the electrode in this structure is unimportant.A theoretical study for field emission emitter array diodes is discussed by Lee et al. in "A Theoretical Study on Field Emission Array For 20 Microsensors", IEEE Transactions on Electron Devices, Vol. 39, No. 2, p. 313,February 1992. The proposed structure disclosed in the theoretical study comprises a plurality of cone or wedge-shaped emitter arrays mounted below a single Si diaphragm.
What is not seen in the prior art of microsensors is a force detecting 25 sensor which is practical to m~mlfacture and not cost prohibitive, but which will supply the n~cess~ry sensiLiviLy required for use in accelerometers, microsensors and vibration sensors.
Summary of Invention The microsensor according to the invention comprises an electrically 30 conductive substrate, a resilient electrode spaced apart from the substrate and a single crystal stationary electrode in electrical contact with the substrate andcomprising an electrode tip extending toward the resilient electrode and spaced apart from the resilient electrode by a predetermined distance. In one embodiment of the invention, an in.cnl~ting layer is disposed between the substMte and the resilient electrode, and the stationary electrode is disposed in a recess of the insulating layer.
Electrical terminals, connected to the resilient electrode and the substrate, provide 5 connection to an electrical circuit whereby the force applied to the sensor can be measured on the basis of the change in electrical characteristics between the resilient electrode and the substrate due to changes in the predetermined distance resulting from deflection of the resilient electrode.
In a particular embodiment of the invention, the resilient electrode 10 comprises a cantilever arm disposed between the first inclll~ting layer and a second insulating layer. A second recess is formed in the second insulating layer above the cantilever arm permitting movement of the cantilever arm. An upper layer is formed on the second inclll~ting layer thereby fully enclosing the cantilever arm within the first and second recesses.
The microsensor according to the invention is formed by a process comprising the steps of forming a first layer of insulating material and a supporting layer on the substrate. The first layer of insulating material is disposed between the substrate and the supporting layer. An aperture is formed in the supporting layer, and a recess is formed in the incnl~ting material adjacent the aperture to expose a 20 portion of the substrate. A stream of semiconductor atoms is directed at the aperture in a direction substantially normal to the exposed portion of the substrate to epitaxially grow a single crystal semiconductor electrode on the substrate. In accordance with one aspect of the invention, the aperture closes in the process of forming the stationary electrode causing the stationary electrode to be formed in the 25 shape of a cone, thereby facilit~ting the flow of tunneling current between the electrodes. The process may be performed in a vacuum in the range of 10-1~ to 10-8 Torr, and the aperture is closed in the process to provide a vacuum environment for the electrodes. Furthermore, the process described above can be modified to create a cone having a diameter smaller than the diameter of the aperture. The insulating 30 layer and support layer are formed on the substrate as described above. In addition, the aperture and recess are formed in the support layer and insulating layer as described above. Thereafter, a stream of semiconductor atoms is directed at the aperture and the support layer at an acute angle with respect to the plane of the substrate, causing atoms to be deposited on the support layer and around the aperture thereby narrowing the aperture. After the diameter of the aperture has been narrowed sufficiently, the stream of atoms is directed at the substrate and the support layer at an angle substantially normal to the plane of the support layer and substrate thereby forming the cone and closing the aperture.
In one embodiment of the invention, the process of the invention is used to produce an array of individual sensors by forming a plurality of single crystal electrodes on the substrate and a corresponding plurality of resilient electrodes. The stationary electrodes of the array are connected in parallel, and the resilient electrodes are connected in parallel to form a multielectrode sensor. Such a sensor advantageously provides greater current variations with changes in applied force and provides re~llln(l~ncy which alleviates yield and device failure problems.
Brief Des~ ,lion of the Drawin~
The invention will now be described with reference to the drawings wherein:
FIG. 1 is a perspective view of a first embodiment of a microsensor according to the invention;
FIG. 2 is a partial sectional, perspective view of the microsensor as seen in FIG. 1;
FIG. 3 is a sectional view of a partially completed microsensor after a first step in the method of making a microsensor according to the invention, namely forming an in~ul~ting layer on the base member;
FIG. 4 is a sectional view of a partially completed microsensor after an intermediate step in the method of making a microsensor according to the invention, namely forming a support layer on the in~ul~ting layer and forming anaperture in the support layer and insulating layer;
FIG. 5 is a sectional view of a partially completed microsensor after a further step in the method of making a microsensor, namely forming a recess inthe in~ul~ting layer;
FIGS. 6 and 7 are sectional views of the a partially completed microsensor in a further step in the method of making a microsensor according tothe invention, namely depositing silicon or gallium arsenide on the base member 2~913S~
and support layer to create a cone on the base member and close the aperture in the support layer;
FIG. 8 is a selectional view of the first embodiment of the microsensor according to the invention;
FIG. 9 is a selectional view of a partially completed microsensor showing a step in the method of making a second embodiment of the microsensor according to the invention, namely depositing a second insulating layer on the membrane;
FIG. 10 is a selectional view of a second embodiment of the microsensor according to the invention having a cantilever arm anode;
FIG. 11 is a top view of the cantilever arm of the second embodiment of the microsensor according to the invention;
FIG. 12 is a partial sectional view of a microsensor showing a step in the method of making a third embodiment of the microsensor according to the invention, namely narrowing the aperture in the support layer prior to deposition of the Si cone;
FIG. 13 is a sectional view of a third embodiment of a microsensor according to the invention; and FIG. 14 is a plan view of a sensor array comprising a plurality of sensors.
Description of the Preferred Embodiment Referring now to the drawings, and to FIGS. 1 and 2 in particular, a microsensor 12 according to the invention comprises a conductive substrate 14 and a cone 16 formed on the substrate 14. A conductive top member 18 supported above the cone 16, forms the movable deflection member and serves as one of the electrodes of the tunnel sensor. An insulating layer 20 is formed on the substrate 14. A recess 22 is formed in the insulating layer 20 and the cone 16 is disposedwithin the recess 22. A support layer 24 is formed on the insulating layer 20 such that the support layer 24 is disposed between the insulating layer 20 and the top member 18. An aperture 26 is formed in the support layer 24 immediately adjacentthe tip of the cone 16. The support layer 24 is covered by the top member 18 andthe aperture 26 is substantially filled by a membrane 27.
The first embodiment of the microsensor 12 according to the invention is suitable for a use in detecting forces applied to the membrane such as acceleration, pressure and vibration.
The substrate 14 and cone 16 are preferably formed of conductive 5 material. This material may be an elemental semiconductor such as Si or a compound semiconductor such as GaAs, AlGaAs, GaP, InP, InSb, InGaAs, InAs, GaSb or AlSb. The microsensor may have an elemental semiconductor cone formed on an elemental semiconductor substrate (e.g. Si cone on Si substrate), acompound semiconductor cone formed on a compound semiconductor substrate (e.g.
10 GaAs cone on a GaAs substrate), or a compound semiconductor cone formed on a compound semiconductor layer which is in turn formed on a elemental semiconductor substrate (e.g. a GaAs cone formed on a GaAs conductive layer which is in turn formed on a Si substrate).
The plerell~d embodiment of the microsensor according to invention 15 comprises a Si cone formed on a Si substrate and the following description of the preferred embodiment shall be directed to this structure, it being understood that the above-described semiconductors may be substituted therefore.
The insulating layer 20 of the pl~felled embodiment is preferably SiO2. The support layer 24 is preferably formed of a poly-Si or Si3N4 and the top 20 layer 18 is preferably formed of poly-Si.
A constant voltage power source 30 has a positive terminal 32 conn~ctecl to the top member 18 and a negative terminal 34 connected via the substrate 14 to the cone 16. With this arrangement, the top member 18 is the anode and the cone 16 is the cathode of the sensor. The recess 22 is m~int~in~d at a 25 vacuum on the order of 10-6 Torr and the distance between the tip of the cone 16 and the membrane 27 of the top member 18 may be from 0.25 to 2.00 micrometers.
The potential required for tunneling depends on the distance between the cathodeand the anode, the shape of the cathode and the work function of the cathode material. The tunneling effect between the Si cathode cone 16 and the anode top 30 member 18, separated by a distance in the specified range, occurs when a potential in the range of 15 to 100 volts is supplied by the power source 30.
As a force is applied substantially normally to membrane 27, the membrane 27 is displaced such that the spacing between the membrane 27 and the 21~135~
cone 16 changes and the m~gnit~lde of the tunneling current changes as the membrane 27 moves relative to the cone 16. The change in electron current can bereadily detçcted by a known current sensor 36 providing an electrical output signal indicative of the applied force since the tunneling current varies with the change in 5 spacing in a known manner.
The process for m~nllf~cturing the first embodiment of the microsensor 12 shown in FIGS. 1 and 2 is seen in FIGS. 3-8. As shown in FIG. 3, the first step in the process for making a microsensor 12 according to the invention is forming the in~ ting layer 20 on one surface of the Si substrate 14. The 10 insulating layer 20, preferably SiO2, is thermally grown or deposited on the substrate 14 in a well-known fashion in an oxide environment. In the pler~ d embodiment, the oxide layer is in the range of 1.5 to 2.5 microns thick.
The next step in the process, as seen in FIG. 4, is depositing a polycrystalline film support layer 24 on the in~ ting layer 20 such that the 15 insulating layer 20 is disposed between the substrate and the support layer 24.
Preferably, the support layer 24 is a poly-Si film in the range of 0.8 to 1.5 microns thick and deposited on the insulating layer by a well-known chemical vapor deposition process.
Next, as shown in FIG. 5, the aperture 26 is formed in the support 20 layer 24 and the recess 22 is formed in the insulating layer 20. Preferably the aperture 26 is circular and is in the range of 0.5 to 2.5 microns in diameter. The aperture 26 is preferably formed by dry etching the polycrystalline support layer 24 to form well defined edges and the recess 22 is preferably formed in the oxide insulating layer 20 by wet etching. The recess 22 is preferably circular and has a 25 diameter W but could be any shape. The etching process exposes a portion of the surface of the substrate 14.
The next step in the method of making the microsensor 12 according to the invention is the growth of the Si cone 16 and the top member 18, as shown in FIGS. 6-8. The structure of the substrate 14, the insulating layer 20 and support 30 layer 24 mounted thereon is placed in a vacuum chamber with a background pressure in the range of 10-1~ to 10-8 Torr. The Si cone 16 is epitaxially grown on the substrate 14 using a known Molecular Beam Epitaxial (MBE) crystal growing process. The substrate 14 is preferably a single crystal highly n-doped Si substrate.
219i35~
A suitable substrate is a single crystal Si wafer having impurities in the range of 5 x 1019 to 7 x 102~ impulilies per cubic centimeter. Such substrates are commercially available and may be purchased from Wacker Siltronic Corp. of Portland, Oregon.
A well-known Si source 40 in the vacuum chamber emits a stream of Si atoms. The stream of atoms are directed at the aperture 26 substantially perpendicular to the plane of the substrate 14. The substrate is heated to a temperature in the range of 800-900~C and emitted Si atoms traveling through aperture 26 epitaxially grow a single crystal structure on the substrate 14. Fmittç~l atoms deposited on the polycrystalline support layer 24 will tend to grow a polycrystalline top member 18.
It is desirable to epitaxially grow an n-doped cone and doping of the cone is accomplished by introducing a suitable doping element, such as phosphorus into the emitter. This results in the introduction of phosphorus atoms into the stream of Si atoms being deposited on the substrate 14 and the support layer 24.The amount of phosphorus atoms present in the stream of Si atoms depends upon the vapor pressure of phosphorus within the emitter. Through this process, doping of the cone is done in situ. The doping can be con~llcte~l with any n-doping element.
As seen in FIG. 6, the diameter, b, of the base of the cone 16 is substantially equal to the diameter of the aperture 26. As the Si atoms are deposited on the support layer 24, the diameter of the aperture 26 decreases as seen in FIG.
7. Fewer atoms pass through the aperture and are deposited on the substrate 14 as the aperture 26 gets progressively smaller. This ever decreasing diameter of theaperture 26 results in an ever decreasing area of deposition within the recess 22 and forms a cone-shaped cathode 16. As the deposition of Si continues, the aperture will eventually close, thereby enclosing the cone 16 within the recess 22, as seen in FIG. 8. The cone growth process is conducted in a vacuum environment and the vacuum is m:~int~in~d within the recess 22 because the cone is sealed within therecess 22.
The important parameters which determine circular plate deflections and vibration modes of the membrane 27 surrounding the aperture 26 are the thickness, diameter, material properties, and boundary conditions. The deflection 219i3~5 .~ g and vibration motion of the thin circular membrane 27 is characterized by a mllltitude of circular and diametrical natural mode shapes at differing frequencies.
The combination of various mode shapes will influence the membrane-to-tip tunnelgap in response to acceleration. This multi-mode response can be simplified by 5 depositing a circular mass 28 (FIG. 1) on top of the plate centered over the tip.
Under acceleration, this mass causes a radially symmetric loading of the plate which helps elimin~te ullw~llL~d modes. The deposition of the circular mass 28 can be done using standard integrated chip technology.
A second embodiment of the microsensor according to the invention, 10 and the process for making the same is seen in FIGS. 9-11. As seen in FIG. 10, the second embodiment of the microsensor 112 comprises a conductive substrate 114, a cone 116 formed on the substrate 114 and a cantilever arm 118 supported above the cone 116. In this embodiment, the cantilever arm 118 comprises one electrode and the cone 116 via the substrate 114 comprises the other electrode of the 15 microsensor. This sensor has primary application as an accelerometer in whichacceleration can be determined from deflection of the cantilever arm 118 relative to the cone 116.
Referring to FIG. 9, a first insulating layer 120 is formed on the substrate 114 and a support layer 122 is formed on the first in~ ting layer 120 by 20 the same process described earlier in the first embodiment. Similarly, the cone 116 is formed on the substrate 114 and an upper layer 117 is formed on the support layer 122 by the previously described processes. After the upper layer 117 has been deposited, a second in~ ting layer 124 is formed on the upper layer in an oxide environment such that the upper layer 117 is disposed between the second 25 in~ ting layer 124 and the support layer 122. The substrate 114 and the cone 116 consist of single crystal Si and the upper layer 117 consists of polycrystalline Si.
The first and second insulating layers 120, 124, are preferably SiO2 which is formed by heating the microsensor in an oxide ellvholllllent in a well-known manner. Inthe preferred embodiment, the second insulating layer is approximately 3.0 to 5.0 30 microns thick.
Next, a second recess 128 is formed in the second insulating layer 124. The second recess 128 is formed by wet etching the second insulating layer 124 with HF. The wet etching process does not remove or damage any of the exposed upper layer 117. After the creation of the second recess 128, the upper layer 117 is subjected to a dry etching procedure to create the cantilever arm 118.
As seen in FIGS. 9 and 10, the cantilever arm 118 extends into the opening created by the first recess 126 and second recess 128. The cantilever arm 118 is suspended above the Si cone 116.
After the formulation of the cantilever arm 118, the top member 130 is formed on the microsensor 112. Preferably, the top member 130 comprises a glass plate secured to the second in~ ting layer 124. The top member 130 is mounted on the microsensor 112 in a vacuum environment of approximately 10-6 Torr. Finally, the substrate 14 is electrically connected to the negative terminal 134 of a power source 132 and the cantilever arm 118 is electrically connected to the positive terminal 136 of the power source 132. With this arrangement, the cantilever arm 118 is the anode and the cone 16 comprises the cathode. In light of the vacuum environment in the recesses 126, 128 and the spacing in the range of 0.25 to 2.0 micrometers between the cathode cone 116 and the anode cantilever arm 118, a tunneling effect of electrons results when a potential in the range of 15 to 100 volts is supplied by the power source 132.
The tunneling current between the cathode cone 116 and the anode cantilevered arm 118 will vary as a result of a change in the spacing between the cone 116 and the cantilever arm 118. The cantilever arm 118 flexes as a result of the force applied substantially normal to the cantilever arm 118 and the currentchanges as a result of the change in spacing between the anode and the cathode.
These changes in current can be readily detected by the current sensor 138 in a known manner to provide an output signal indicative of the applied force.
The process for making the microsensor according to the invention can be modified to create cones of varying size in relation to the size of the aperture. As seen in FIG. 6, the diameter b of the base of the cone 16 of the first embodiment is substantially equal to the diameter of the aperture 26 in the support layer 24. A method for making a cone having a diameter b smaller than the diameter of the aperture is described with reference to FIGS. 12 and 13. A thirdembodiment of a microsensor according to the invention and having a relatively smaller cone is shown in FIG. 13.
As in the first embodiment, the process for making the third embodiment of the microsensor 212 comprises the steps of forming a first insulating layer 216 on the substrate 214 and then forming a support layer 222 on the insulating layer 216 such that the insulating layer 216 is disposed between the 5 support layer 222 and the substrate 214. Next, an aperture 226 having a diameter d is formed in the support layer 222 and the insulating layer 216, as previously described for the first embodiment. Next, the recess 218 is formed in the first insulating layer 216 pursuant to the previously described wet etching process.
A stream of Si atoms are directed at the support layer 222 and the 10 aperture 226 from a non-aligned emitter 240 as depicted in FIG. 12. The grazing incidence between the plane of the support layer 222 and the direction of the emitter 240 is an acute angle which permits deposition of the Si atoms on the support layer and surrounding the aperture 226, but prevents deposition within the area of thecone in the recess 218. In the preferred embodiment, this angle is approximately 15 15 degrees. As the stream of Si atoms are directed at the support layer 222 and the aperture 226, the microsensor 212 is rotated relative to the emitter 240.
Alternatively, the emitter 240 could be rotated relative to the microsensor 212. In this particular orientation of the emitter 240, the Si atoms are deposited on the support layer 222 and the aperture 226. However, no appreciable amounts of Si 20 atoms are deposited on the substrate 214. With the deposition on the support layer 222, the diameter d of the aperture is decreased. Next, a stream of Si atoms aredirected at the substrate 214, support layer 222 and aperture 226 at a directionsubstantially normal to the substrate 214 as depicted in FIG. 13. As described earlier, this results in the epitaxial growth of a cone 220 immediately below the 25 aperture 226 and the deposition of the membrane 230. However, because the diameter of the aperture 226 has been decreased, the diameter b of the cone 220 is substantially equal to the reduced diameter of the aperture 226. Through the narrowing of the aperture prior to growth of the cone, a greater spacing between the membrane 230 and the tip of the cone 220 is achieved without reduction of the 30 diameter of the membrane 230.
As stated earlier, the potential requirement for the tunneling of electrons between the tip of the cathode cone and the anode is dependent upon the shape of the cathode cone. A cone with a sharp tip will result in a lower required potential than a dull tip. The Si cone of the microsensor according to the invention can be sharpened after deposition of the cone to create a more responsive microsensor suitable for operation at a lower anode voltage. The sharpening process begins after the deposition of the cone 16 and the top member 18.
Referring to FIG. 7, once the cone 16 has been deposited, the top member 18 can be removed by wet etching. This exposes the cone 16. Next, the microsensor 12 isthermally heated and subjected to an oxide environment in a well-known manner.
Si02 forms on the entire surface of the cone 16. After the formation of an initial layer of Si02, oxygen continues to move through the oxide layer to react with the Si to create Si02. The oxygen moves inwardly through the Si02 layer at a slower rate at the tip of the cone because of the inherent stresses within the structure of the Si atoms at the tip. Therefore, the thickness of the oxide layer adjacent the base and along the sides of the cone 16 will be thicker than at the tip. Finally, the oxide is removed by a wet etching process resulting in a cone having a sharp tip. In practice, tips having a radius of 10 Angstroms can be obtained utili7.ing the sharpening process.
After the tip has been sharpened, the top member 18 must be reapplied to the support layer 24. The top member 18 is applied by directing a stream of Si atoms at the support layer 24 and the aperture 26 at an acute angleresulting in deposition of Si atoms only on the support layer 24, in the manner described earlier with reference to FIG. 11. The microsensor is rotated relative to the emitter 40 during the deposition to obtain a uniform layer of Si which fullyencloses the cone within the recess 22. Once again, this evaporation process is conducted in a vacuum environment resulting in a vacuum within recess 22.
FIG. 14 shows a sensor array 300 a plurality which may be produced using the processes described herein as a single device having a plurality of individual sensors 301. Each of the sensors may be a sensor of the type as shownfor example in FIGS. 1, 2 and 10. The array may be made to various sizes with several hundred or several thousand individual sensors. Depending on the actual size of each of the sensors, several thousand of the sensors may be formed in a single array which measures less than 1 square centimeter. The entire array is formed in one process, the stationary cone electrodes are all formed on a commonsubstrate and the flexible membrane electrodes are all formed in a layer of 2 1 9 1 3$5 semiconductor material. Consequently, the membranes and the cones of the plurality of individual sensors are effectively connected in parallel. A single output conductor 305 is cormected to the top layer forming the membranes and a single output conductor 306 is connected to the common substrate. The multiple sensor S array provides a greater sensor output current and small variations in the applied force, e.g. an acceleration force, are more readily detectable. Furthermore, themultiple sensor array provides a redlln~n~y which reduces the sensitivity to yield and failure problems.
While particular embodiments of the invention have been shown, it 10 will be understood, of course, that the invention is not limited thereto since modifications may be made by those skilled in the art, particularly in light of the foregoing teachings. Reasonable variation and modification are possible within the scope of the foregoing disclosure of the invention without departing from the spirit of the invention.
Claims (35)
1. A sensor for detecting an externally applied force comprising:
an electrically conductive substrate having an upper surface;
a resilient electrode spaced apart from the upper surface of the substrate;
a single crystal semiconductor stationary electrode having a base in electrical contact with the upper surface of the substrate and a tip extending toward said resilient electrode, the tip being spaced apart from the resilient electrode by a predetermined space; and a first electrical terminal connected to the resilient electrode and a second electrical terminal connected to the substrate, the terminals beingconnectable to an electrical circuit;
whereby the resilient electrode is deflected with respect to the substrate and the stationary electrode in response to an external force applied to the sensor, the force being capable of measurement based on the change in electricalcharacteristics between the resilient electrode and the substrate due to changes in the predetermined space between the resilient electrode and the tip of the stationary electrode resulting from deflection of the resilient electrode.
an electrically conductive substrate having an upper surface;
a resilient electrode spaced apart from the upper surface of the substrate;
a single crystal semiconductor stationary electrode having a base in electrical contact with the upper surface of the substrate and a tip extending toward said resilient electrode, the tip being spaced apart from the resilient electrode by a predetermined space; and a first electrical terminal connected to the resilient electrode and a second electrical terminal connected to the substrate, the terminals beingconnectable to an electrical circuit;
whereby the resilient electrode is deflected with respect to the substrate and the stationary electrode in response to an external force applied to the sensor, the force being capable of measurement based on the change in electricalcharacteristics between the resilient electrode and the substrate due to changes in the predetermined space between the resilient electrode and the tip of the stationary electrode resulting from deflection of the resilient electrode.
2. A sensor according to claim 1 wherein the single crystal semiconductor stationary electrode comprises Si.
3. A sensor according to claim 1 further comprising a first insulating layer disposed between the substrate and the resilient electrode, said first insulating layer having a first recess formed therein, the single crystal semiconductor stationary electrode being disposed in said first recess.
4. A sensor according to claim 3 wherein the first insulating layer comprises SiO2.
5. A sensor according to claim 3 further comprising a support layer formed on the first insulating layer such that the first insulating layer is disposed between the support layer and the substrate, the support layer having an aperture formed therein and the resilient electrode being disposed in the aperture.
6. A sensor according to claim 5 wherein the sensor comprises a plurality of the resilient electrodes connected to the first terminal in parallel and a plurality of the stationary electrodes connected to the second terminal in parallel.
7. A sensor according to claim 1 wherein the support layer comprises a polycrystalline Si structure.
8. A sensor according to claim 1 wherein the resilient electrode comprises n-doped Si.
9. A sensor according to claim 1 wherein the single crystal stationary Si electrode comprises n-doped Si.
10. A sensor according to claim 9 wherein the substrate comprises n-doped Si.
11. A sensor according to claim 1 wherein the single crystal stationary semiconductor electrode is cone shaped.
12. A sensor according to claim 1 wherein the predetermined space between the tip of the stationary electrode and the resilient electrode is under a vacuum.
13. A sensor according to claim 1 wherein the resilient electrode comprises a cantilever arm having a first and second end, the second end being spaced from the stationary electrode tip by the predetermined space.
14. A sensor according to claim 13 further comprising:
a first insulating layer disposed between the substrate and the resilient electrode, said first insulating layer having a first recess formed therein, the single crystal semiconductor stationary electrode being disposed in said first recess; and a second insulating layer having a second recess formed therein and being formed on the second end of the cantilever arm such that the second end of the cantilever arm is disposed between the first insulating layer and the second insulating layer and such that the second recess is aligned with the first recess.
a first insulating layer disposed between the substrate and the resilient electrode, said first insulating layer having a first recess formed therein, the single crystal semiconductor stationary electrode being disposed in said first recess; and a second insulating layer having a second recess formed therein and being formed on the second end of the cantilever arm such that the second end of the cantilever arm is disposed between the first insulating layer and the second insulating layer and such that the second recess is aligned with the first recess.
15. A sensor according to claim 14 further comprising a top member mounted on the second insulating layer such that the second insulating layer is disposed between the top member and the first insulating layer.
16. A sensor according to claim 14 wherein the sensor comprises a plurality of the resilient electrodes connected to the first terminal in parallel and a plurality of the stationary electrodes connected to the second terminal in parallel.
17. A sensor according to claim 1 wherein the resilient electrode comprises an anode in the electrical circuit.
18. A sensor according to claim 1 wherein the single crystal semiconductor stationary electrode comprises a cathode in the electrical circuit.
19. A sensor according to claim 1 wherein the predetermined spacing between the resilient electrode and the stationary electrode is in the range of 0.25 to 2.0 micrometers.
20. A sensor according to claim 1 wherein the semiconductor is selected from the group consisting of silicon, gallium arsenide, gallium phosphide, aluminum gallium arsenide, gallium antimonide, aluminum antimonide, indium phosphide, indium gallium arsenide, indium arsenide and indium antimonide.
21. A sensor according to claim 1 wherein the single crystal semiconductor stationary electrode is selected from the group consisting of silicon, gallium arsenide, gallium phosphide, aluminum, gallium arsenide, gallium antimonide, aluminum antimonide, indium phosphide, indium gallium arsenide, indium arsenide and indium antimonide and the electrically conductive substrate is selected from the group consisting of silicon, gallium arsenide, gallium phosphide, aluminum gallium arsenide, gallium antimonide, aluminum antimonide, indium phosphide, indium gallium arsenide, indium arsenide and indium antimonide.
22. An array of sensors for detecting an externally applied force comprising:
an electrically conductive substrate having an upper surface;
an upper layer comprising plurality of resilient electrodes spaced apart from the upper surface of the substrate;
a plurality of single crystal semiconductor stationary electrodes, each single crystal semiconductor stationary electrode having a base in electrical contact with the upper surface of the substrate and a tip extending toward one of the resilient electrodes and spaced apart therefrom by a predetermined space;
and a first electrical terminal connected to the upper layer and a second electrical terminal connected to the substrate;
whereby the plurality of resilient electrodes are deflected with respect to the substrate and the plurality of stationary electrodes in response to an external force applied to the array of sensors, the force being capable of measurement based on the change in electrical characteristics between the resilient electrode and the substrate due to changes in the predetermined space between the plurality of resilient electrodes and the tips of the stationary electrodes resulting from deflection of the plurality of resilient electrodes.
an electrically conductive substrate having an upper surface;
an upper layer comprising plurality of resilient electrodes spaced apart from the upper surface of the substrate;
a plurality of single crystal semiconductor stationary electrodes, each single crystal semiconductor stationary electrode having a base in electrical contact with the upper surface of the substrate and a tip extending toward one of the resilient electrodes and spaced apart therefrom by a predetermined space;
and a first electrical terminal connected to the upper layer and a second electrical terminal connected to the substrate;
whereby the plurality of resilient electrodes are deflected with respect to the substrate and the plurality of stationary electrodes in response to an external force applied to the array of sensors, the force being capable of measurement based on the change in electrical characteristics between the resilient electrode and the substrate due to changes in the predetermined space between the plurality of resilient electrodes and the tips of the stationary electrodes resulting from deflection of the plurality of resilient electrodes.
23. A sensor according to claim 22 wherein the semiconductor is selected from the group consisting of silicon, gallium arsenide, gallium phosphide, aluminum gallium arsenide, gallium antimonide, aluminum antimonide, indium phosphide, indium gallium arsenide, indium arsenide and indium antimonide.
24. A sensor according to claim 22 wherein the single crystal semiconductor stationary electrode is selected from the group consisting of silicon, gallium arsenide, gallium phosphide, aluminum gallium arsenide, gallium antimonide, aluminum antimonide, indium phosphide, indium gallium arsenide, indium arsenide and indium antimonide and the electrically conductive substrate is selected from the group consisting of silicon, gallium arsenide, gallium phosphide, aluminum gallium arsenide, gallium antimonide, aluminum, antimonide, indium phosphide, indium gallium arsenide, indium arsenide and indium antimonide.
25. A process for the formation of an electrode comprising the steps of:
forming a first insulating layer on a single crystal semiconductor substrate;
forming a support layer on the first insulating layer such that the first insulating layer is disposed between the substrate and the support layer;
forming an aperture in the support layer and the first insulating layer to expose a portion of the substrate; and directing a stream of semiconductor atoms at the support layer aperture in a direction substantially normal to the exposed portion of the substrate to epitaxially grow a single crystal semiconductor electrode.
forming a first insulating layer on a single crystal semiconductor substrate;
forming a support layer on the first insulating layer such that the first insulating layer is disposed between the substrate and the support layer;
forming an aperture in the support layer and the first insulating layer to expose a portion of the substrate; and directing a stream of semiconductor atoms at the support layer aperture in a direction substantially normal to the exposed portion of the substrate to epitaxially grow a single crystal semiconductor electrode.
26. A process for the formation of an electrode according to claim 25 wherein the semiconductor is selected from the group consisting of silicon, gallium arsenide, gallium phosphide, aluminum gallium arsenide, gallium antimonide, aluminum antimonide, indium phosphide, indium gallium arsenide, indium arsenide and indium antimonide.
27. A process for the formation of an electrode according to claim 25 wherein the single crystal semiconductor electrode is grown in an environmenthaving a pressure in the range of 10-10 to 10-8 Torr.
28. A process for the formation of an electrode according to claim 25 further comprising the step of directing a stream of semiconductor atoms at the support layer in a direction substantially normal to the support layer to deposit a top member on the support layer, wherein the top member fully encloses the aperture of the support layer.
29. A process for the formation of an electrode according to claim 25 further comprising the step of introducing an n-doping element into the stream of semiconductor atoms to epitaxially grow an n-doped single crystal semiconductor electrode.
30. A process for the formation of an electrode according to claim 25 further comprising the steps of:
forming a top member on the support layer such that the support layer is disposed between the top member and first insulating layer;
forming a second insulating layer on the top member such that the top member is disposed between the second insulating layer and the support layer;
forming a recess in the second insulating layer; and removing a portion of the support layer and the top member to create a cantilever arm, the cantilever arm being supported adjacent the single crystal semiconductor electrode.
forming a top member on the support layer such that the support layer is disposed between the top member and first insulating layer;
forming a second insulating layer on the top member such that the top member is disposed between the second insulating layer and the support layer;
forming a recess in the second insulating layer; and removing a portion of the support layer and the top member to create a cantilever arm, the cantilever arm being supported adjacent the single crystal semiconductor electrode.
31. A process for the formation of an electrode according to claim 25 further comprising the step of directing a stream of semiconductor atoms at the support layer at an acute angle which permits deposition of the semiconductor atoms on the support layer and surrounding the aperture, but prevents deposition on the exposed portion of the substrate.
32. A sensor for detecting an external force acting upon the sensor made according to claim 25.
33. A sensor for detecting an external force acting upon the sensor made according to the following process:
forming a first insulating layer on a single crystal semiconductor substrate;
forming a support layer on the first insulating layer such that the first insulating layer is disposed between the substrate and the support layer.
forming an aperture in the support layer and the first insulating layer to expose a portion of the substrate; and directing a stream of semiconductor atoms at the support layer aperture in a direction substantially normal to the exposed portion of the substrate to epitaxially grow a single crystal semiconductor electrode.
forming a first insulating layer on a single crystal semiconductor substrate;
forming a support layer on the first insulating layer such that the first insulating layer is disposed between the substrate and the support layer.
forming an aperture in the support layer and the first insulating layer to expose a portion of the substrate; and directing a stream of semiconductor atoms at the support layer aperture in a direction substantially normal to the exposed portion of the substrate to epitaxially grow a single crystal semiconductor electrode.
34. A sensor according to claim 33 wherein the semiconductor is selected from the group consisting of silicon, gallium arsenide, gallium phosphide, aluminum gallium arsenide, gallium antimonide, aluminum antimonide, indium phosphide, indium gallium arsenide, indium arsenide and indium antimonide.
35. A sensor according to claim 33 further comprising the steps of:
forming a top member on the support layer such that the support layer is disposed between the top member and first insulating layer;
forming a second insulating layer on the top member such that the top member is disposed between the second insulating layer and the support layer;
forming a recess in the second insulating layer; and removing a portion of the support layer and the top member to create a cantilever arm, the cantilever arm being supported adjacent the single crystal semiconductor electrode.
forming a top member on the support layer such that the support layer is disposed between the top member and first insulating layer;
forming a second insulating layer on the top member such that the top member is disposed between the second insulating layer and the support layer;
forming a recess in the second insulating layer; and removing a portion of the support layer and the top member to create a cantilever arm, the cantilever arm being supported adjacent the single crystal semiconductor electrode.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/934,880 US5526703A (en) | 1992-08-21 | 1992-08-21 | Force detecting sensor and method of making |
| US08/259,395 US5424241A (en) | 1992-08-21 | 1994-06-14 | Method of making a force detecting sensor |
| CA002191355A CA2191355A1 (en) | 1992-08-21 | 1996-11-26 | Force detecting sensor and method of making |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/934,880 US5526703A (en) | 1992-08-21 | 1992-08-21 | Force detecting sensor and method of making |
| CA002191355A CA2191355A1 (en) | 1992-08-21 | 1996-11-26 | Force detecting sensor and method of making |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2191355A1 true CA2191355A1 (en) | 1998-05-26 |
Family
ID=25678860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002191355A Abandoned CA2191355A1 (en) | 1992-08-21 | 1996-11-26 | Force detecting sensor and method of making |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5526703A (en) |
| CA (1) | CA2191355A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6202495B1 (en) * | 1997-12-10 | 2001-03-20 | Northeastern University | Flow, tactile and orientation sensors using deformable microelectrical mechanical sensors |
| US6802811B1 (en) | 1999-09-17 | 2004-10-12 | Endoluminal Therapeutics, Inc. | Sensing, interrogating, storing, telemetering and responding medical implants |
| EP1267729A2 (en) | 2000-03-23 | 2003-01-02 | SciMed Life Systems, Inc. | Pressure sensor for therapeutic delivery device and method |
| US7082838B2 (en) * | 2000-08-31 | 2006-08-01 | Tdk Corporation | Extraordinary piezoconductance in inhomogeneous semiconductors |
| EP1429357A1 (en) * | 2002-12-09 | 2004-06-16 | IEE INTERNATIONAL ELECTRONICS & ENGINEERING S.A. | Foil-type switching element with multi-layered carrier foil |
| CN100356177C (en) * | 2003-12-25 | 2007-12-19 | 北京大学 | High precision tunnel type accelerometer and preparation method thereof |
| DE102004026307B4 (en) * | 2004-05-31 | 2016-02-11 | Novineon Healthcare Technology Partners Gmbh | Tactile instrument |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3789471A (en) * | 1970-02-06 | 1974-02-05 | Stanford Research Inst | Field emission cathode structures, devices utilizing such structures, and methods of producing such structures |
| US3755704A (en) * | 1970-02-06 | 1973-08-28 | Stanford Research Inst | Field emission cathode structures and devices utilizing such structures |
| US3665241A (en) * | 1970-07-13 | 1972-05-23 | Stanford Research Inst | Field ionizer and field emission cathode structures and methods of production |
| US4141405A (en) * | 1977-07-27 | 1979-02-27 | Sri International | Method of fabricating a funnel-shaped miniature electrode for use as a field ionization source |
| US4566023A (en) * | 1983-08-12 | 1986-01-21 | The Regents Of The University Of California | Squeezable electron tunnelling junction |
| US4638669A (en) * | 1985-05-07 | 1987-01-27 | Massachusetts Institute Of Technology | Quantum tunneling cantilever accelerometer |
| US4857799A (en) * | 1986-07-30 | 1989-08-15 | Sri International | Matrix-addressed flat panel display |
| US5015912A (en) * | 1986-07-30 | 1991-05-14 | Sri International | Matrix-addressed flat panel display |
| US5009111A (en) * | 1988-08-31 | 1991-04-23 | Quanscan, Inc. | Differential force balance apparatus |
| US5079958A (en) * | 1989-03-17 | 1992-01-14 | Olympus Optical Co., Ltd. | Sensor having a cantilever |
| DE3917611A1 (en) * | 1989-05-31 | 1990-12-06 | Deutsche Forsch Luft Raumfahrt | METHOD FOR CALIBRATING AN ACCELERATOR |
| US5064396A (en) * | 1990-01-29 | 1991-11-12 | Coloray Display Corporation | Method of manufacturing an electric field producing structure including a field emission cathode |
| US5089292A (en) * | 1990-07-20 | 1992-02-18 | Coloray Display Corporation | Field emission cathode array coated with electron work function reducing material, and method |
| US5163328A (en) * | 1990-08-06 | 1992-11-17 | Colin Electronics Co., Ltd. | Miniature pressure sensor and pressure sensor arrays |
| US5103682A (en) * | 1990-11-05 | 1992-04-14 | The United States Of America As Represented By The Secretary Of Commerce | Ultra-sensitive force detector employing servo-stabilized tunneling junction |
-
1992
- 1992-08-21 US US07/934,880 patent/US5526703A/en not_active Expired - Lifetime
-
1996
- 1996-11-26 CA CA002191355A patent/CA2191355A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US5526703A (en) | 1996-06-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5844251A (en) | High aspect ratio probes with self-aligned control electrodes | |
| US5994160A (en) | Process for manufacturing micromechanical components having a part made of diamond consisting of at least one tip, and micromechanical components comprising at least one diamond tip | |
| EP0974156B1 (en) | Microtip vacuum field emitter structures, arrays, and devices, and methods of fabrication | |
| US4783237A (en) | Solid state transducer and method of making same | |
| US4553436A (en) | Silicon accelerometer | |
| US5594171A (en) | Capacitance type acceleration sensor | |
| US6441716B1 (en) | Semiconductor piezoresistor | |
| CN100363743C (en) | Resonance tunnel through pressure resistance type micro acceleration meter | |
| US5549006A (en) | Temperature compensated silicon carbide pressure transducer and method for making the same | |
| US20090200163A1 (en) | Chemical Sensor | |
| US7082838B2 (en) | Extraordinary piezoconductance in inhomogeneous semiconductors | |
| US6627965B1 (en) | Micromechanical device with an epitaxial layer | |
| JPH0116030B2 (en) | ||
| US3492513A (en) | Mesa t-bar piezoresistor | |
| JPH05273053A (en) | Temperature sensor and manufacture of the same | |
| US10947107B2 (en) | Device and method of fabricating such a device | |
| US4204185A (en) | Integral transducer assemblies employing thin homogeneous diaphragms | |
| EP0810440B1 (en) | Optical semiconductor component and method of fabrication | |
| US5526703A (en) | Force detecting sensor and method of making | |
| US5679895A (en) | Diamond field emission acceleration sensor | |
| US7504658B2 (en) | Sensor elements with cantilevered bar structures made of semiconductors based on group III-nitride | |
| US5424241A (en) | Method of making a force detecting sensor | |
| US5911157A (en) | Tunnel effect sensor | |
| JPH08261853A (en) | Mechanical-quantity sensor element | |
| CN100437051C (en) | Tunnelling resonance microsound sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |