CA2137928C - A method of treating a semiconductor wafer - Google Patents

A method of treating a semiconductor wafer Download PDF

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CA2137928C
CA2137928C CA002137928A CA2137928A CA2137928C CA 2137928 C CA2137928 C CA 2137928C CA 002137928 A CA002137928 A CA 002137928A CA 2137928 A CA2137928 A CA 2137928A CA 2137928 C CA2137928 C CA 2137928C
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layer
wafer
vapour
compound
silicon
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CA2137928A1 (en
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Christopher David Dobson
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Aviza Europe Ltd
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Aviza Europe Ltd
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Priority claimed from GB929214243A external-priority patent/GB9214243D0/en
Priority claimed from GB929221519A external-priority patent/GB9221519D0/en
Priority claimed from GB929221520A external-priority patent/GB9221520D0/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Polymerisation Methods In General (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

This invention relates to a method of treating a semicon-ductor wafer and in particular, but not exclusively, to planarisa-tion. The method consists of depositing a liquid short-chain po-lymer formed from a silicon containing gas or vapour. Subse-quently water and OH are removed and the layer is stabilised.

Description

WO 94/Oi88~ PCT/GB93/01368 A method of treatin a semi-conductor wafer This invention relates to a method for treating a semi-conductor wafer and in particular, but not exclusively, to what is known as planarisation.
It is common practice in the semi-conductor industry to lay down layers of insulating material between conducting layers in order to prevent short circuits . If a layer of insulating material is simply deposited in the normal way undulations begin to build up as the layers pass over the metallic conductors which they are designed to insulate.
various techniques have been developed to try to overcome this problem by filling the trenches or valleys between the conductors to a height above the top of the conductors so that after treatment a generally planar layer exists on the top of the waf er . One example of such a technique is to spin on layers of polyimide to smooth out the surfaces.
However, in practice, narrow trenches tend to be incompletely filled whilst wide valleys are not fully levelled. As the 2-D dimensions of devices are reduced, these problems are accentuated.
From one aspect the invention consists in a method of treating a semi-conductor wafer comprising, depositing a liquid short-chain polymer havi~': the general formula Six (OH) Y or Six Hy (OH) z on the wafer to form a generally planar layer.
The reference to the polymer being liquid is simply intended to indicate that it is neither gaseous nor WO 94/01885 PC'f/GB93/01368 ~.3~ 9~~
solidified at the moment of deposition..
From one aspect the invention consists in a method of treating a semi-conductor wafer in a chamber including, introducing into the chamber a silicon-corr~aining gas or vapour and a compound, containing peroxide bonding, in vapour form, reacting the silicon-containing gas or vapour with the compound to form a short:-chain polymers and condensing the polymer on the wafer to form a generally planar layer.
to The silicon-containing gas or vapour may be inorganic and preferably is silane or a higher silane, which may be introduced into the chamber with an inert carrier gas, for example nitrogen. The compound m.ay be, for example, hydrogen peroxide or ethandiol.
The method may further comprise removing water and/or OH from the layer. For example the layer may be exposed to a reduced pressure and/or exposed to a low power density plasma, Which may heat the layer to X40° to 120°C.
The method may further comprise forming or depositing an under layer prior to the deposition of the polymer. This under layer may be silicon dioxide and may have a thickness of between 1000 and 3000. It may for example be 2000 thick. The under layer may conveniently be deposited by plasma enhanced chemically vapour deposition. Either the under layer and/or the wafer may be pre-treated by, for example a plasma, to removing contaminants. In that case may be pretreated with a plasma, for example using oxygen as a reactive gas.

21~792~ .
WO 94/01885 ' PCf/GB93/01368 .i Similarly the surface of the deposited polymer layer may be treated in a plasma using a reactive oxygen gas in order to enhance chain lengthening and cross-linking within the polymer. This gas could be, for example, oxygen, nitrogen or hydrogen peroxide vapour and other gases may be appropriate. The plasma has a heating effect wich enhances crosslinking, but there may also be a radiation effect from the various gases. This ehain linking may alternatively be catalysed by exposing the polymer layer to W light, x-rays or ion bombardment. However, in many applications acceleration of chain linking may not be desirable; instead it may be desirable for the polymer molecule particles to settle before significant chain linking occurs.
The method may further comprise depositing or fonaing a capping layer on the surface of the deposited layer. This capping layer may be silicon dioxide. The capping layer is deposited after a proportion of the condensation reactions have occured and water has been removed from the layer.
The method may further comprise heating the polymer layer and this heating preferably takes place after capping.
The polymer layer may be heated to between 180-220°C for between 50-70 minutes. For example it may be heated to 220°C for 6D minutes. The layer may subsequently be allowed to cool to an ambient temperature and then reheated to 430 470°C for 30-50 minutes. For example the second heating may last 40 minutes at 450°C. Indeed this second heating may suffice and may be achieved using a furnace, heat lamps, a hotplate or plasma heating.

.3'~ 938 In one preferred arrangement the polymer layer may be heated to between 200-450°C, prior to capping, in order that the cap can be deposited at elevated temperatures. Although the capping layer could be deposited in one or more steps e.g. a 'cold' capping layer deposited at the temperature of the planarising layer followed by a hot capping layer; the polymer layer having first been heated to 200-450°C as described above.
The density of the hydrogen peroxide may be in the range .of 1.20-1.35 gms/cc and a density of 1.25 gms/cc may be particularly preferred. The hydrogen' peroxide is preferably at 50% concentration when introduced into the chamber.
The ambient temperature within the chamber may be within the range of o-80°C during the deposition of the polymer layer, but the wafer platten is preferably at 0°C or at the dew point of the polymer when in vapour form. Low pressure is also desirable but requires low temperatures (eg 400mT, -10°C).
In order to avoid heating the platten, the wafer is preferably lifted from the platten for each processing step which involves heating.
The method can be used to achieve planarisation or gap filling. In the latter case the ambient chamber temperature may conveniently be even higher.
The invention also includes wafers treated by any of the methods set out above and semi-conductor devices including polymer layers formed by the method above.

~'O 94/01885 ~ PC°T/GB93/01368 The invention may be performed in various ways and a specif is embodiment will now be described, by way of example, with reference to the following drawings, in which;
Figure 1 is a schematic view for apparatus for 5 performing the treatment method;
Figures 2A and 2B are hugely magnified photographs of cross-sections of a wafer treated by the method; and Figures 3A to E illustrate schematically the steps of the process.
Apparatus for treating semi-conductor wafers is schematically illustrated at l0 in Figure 1. It will be understood that only the features which are particularly required for the understanding of the invention are described and illustrated. The general construction of such apparatus is well known in the art.
Thus, the apparatus 10 includes a chamber 11 having a duplex shower head 12 and a wafer support 13. The shower head 12 is connected to RF source 14 to form one electrode, whilst the support 13 is earthed and forms another electrode. Alternatively the R.F. source 14 could be connected to the support 13 and the shower head 12 earthed.
The shower head 12 is connected by respective pipes 15 and 16 to a source of SiH4 in N2 or other inert carrier and a source 16 of H2~2. The carrier gas is conveniently used for ease of operation of the equipment; it is believed that the process could be performed without it.
The source 16 comprises a reservoir 17 of H202, an outlet pipe 18, a pump 19 and a flash heater 20 for WO 94/01885 PCT/GB93/01368'~~~

~'~3't 9~~
vaporising the Ii202.
In use the apparatus is arranged to deposit a short chain, inorganic polymer, which is initially a liquid, a between the interconnects on a semi-conductor chip to a produce planarisation either locally or globally, or for 'gap filling'. The polymer is formed.~by introducing into the chamber the silane and the hydrogen peroxide in vapour form and reacting them within the chamber spontaneously.
Once the resultant polymer is deposited on the wafer, it has been found that its viscosity is such that it fills both small and large geometries or gaps a,nd is generally self levelling. It is believed that efj:ectively there is a settlement process taking place as the polymerisation takes place. The more settlement which occurs prior to full polymerisation the less likelihood there is of cracking.
Very small dimensioned gaps can be filled and because of the fill layer properties these gaps can even, in certain circumstances, be re-entrant.
As has been mentioned, if left, the chains within the polymer will slowly extend and cross link. In some circumstances it may be desirable to accelerate this process by plasma treatment. This treatment produces W radiation and it is believed that it is this. radiation which is responsible for increasing the speed of chain extension and cross linking. Other forms of radiation treatment may therefore be equally applicable. A variety of gases may be n appropriate for use at this stage, for example any inert gas or hydrogen, nitrogen or oxygen containing gases.

WO 94/01885 _ 2 ~ 3 ~ ~ 2 8 PCT/GH93J01368 7 , For good quality films it is desirable to remove as much water and OH from the film at an early stage. This can be done by exposing the layer to a reduced pressure causing the layer to pump water out and the subsequently heating the layer to between say 40°C and 120°C. A pump 22 is provided for reducing chamber pressure.
However in order to solidify fully the polymer layer, it has been found that it is generally necessary to subject the layer to more intense heat treatment. In many instances it is~ necessary or desirable first to deposit a capping layer over the polymer. It is believed that this assists in providing mechanical stability for the polymer layer during cross linking. It may also help to control the rate at which the layer looses water during heating and so have a controlling affect on shrinkage and cracking.
A suitable capping layer would be silicon dioxide.
The heat treatment stage after the capping involves removing excess water from the layer which is a by-product of the cross-linking reaction. The bake also removes SiOH
bonds: The speed at which the water is removed may be important and several ways of removing water have been successful. One suitable sequence comprises baking the layer for 60 minutes at 200°C, cooling it to ambient temperature and then rebaking it for 40 minutes at 450°C.
Microwave heating has also been successful. A simple bake at 450° will often also suff ice, or the bakes may be replaced by the following steps:
1. 2000 .~ 'cold' cap deposited at between 20-40°C.

dVC~ 94!01885 ~ , PCT/GB93/01368 2,~3't 9~8 2. Plasma heat treatment in N20 which raises the temperature to 300-400°C.
3. 4000-6000 'hot' cap is deposited.
Alternatively, in some cases, a singvg stage 'hot cap' deposited at 300-400°C will suffice.
It has been found that the adhesion of the polymer layer to the underlying substrate material can be enhanced by depositing an under layer, for example of silicon dioxide. Typically this should be of the order of 2000.
thickness and it may be laid down by plasma-enhanced chemical vapour deposition>
Examples of actual deposited layers are illustrated in the photographs of Figures 2A and 2B. It will be seen that the upper surface of the layers 21 are generally planar despite the huge magnification involved.
Although SiH4 has proved to be particularly successful, it is believed that the method will be applicable with most silicon-containing gases or vapours. It has been found that to some extent a suitable polymer can be obtained with any concentration or density of H202, but a density range 1.20-1.35 gms/cc has been particularly successful. The most preferred H202 density is 1.25 gms/cc. An H202 concentration of 50% is very effective but it is believed that the preferred concentration may vary depending on whether the object is to achieve planarisation or gap filling. It is preferred that more H202 is supplied than SiH4 and it is particulary preferred that the H202:SiH4 ratio is of the order of 3:1.

213 °~ 9 ~ 8 p~1G1393101368 WC) 94/a1885 In the event that the wafer needs to be removed from the chamber between processing stages, it may be desirable to pre-treat the exposed surface, when the wafer is placed back in the chamber, in order to remove any organics or other contaminants from the exposed surface.
Figures 3A to E illustrate the preferred processing seguence schematically and indicate the probable chemistry.
It may be advantageous to wash the chamber with H202 between at least same of the processing stages.
As it is desirable to keep the platten or support 13 at around 0 ° C , the wafer may be lifted above the support 13 f or each heating process so that the heat of the wafer is not significantly transmitted to the support 13. This can be achieved by arranging an intermediate position 23 for a wafer loading device 21.

Claims (25)

THE EMBODIMENTS OF THE INVENTION IN WHICH AN EXCLUSIVE
PROPERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. A method of treating a semi-conductor wafer, said method steps consisting essentially of:
positioning the wafer in a chamber;
introducing into the chamber silicon-containing gas or vapour and a compound, containing peroxide bonding, in vapour forms and spontaneously reacting the silicon-containing gas or vapour with the compound to form a short-chain polymer on the wafer to form a generally planar layer
2. A method as claimed in claim 1, wherein the silicon-containing gas or vapour is a silane or higher silane.
3. A method as claimed in claim 1, wherein the compound is hydrogen peroxide or ethandiol.
4. A method as claimed in claim 1, further comprising removing water and/or OH from the layer.
5. A method as claimed in claim 4, wherein the water and/or OH removing step includes exposing the layer to a reduced pressure.
6. A method as claimed in claim 5, wherein the layer is exposed to reduce pressure for between 1.5 and 2.5 minutes.
7. A method as claimed in claim 4, wherein a water and/or OH removing step includes exposing the layer to a low power density plasma.
8. A method as claimed in claim 7, wherein the plasma heats the layer to between 40À to 120ÀC.
9. A method a.s claimed in claim 1, further comprising forming or depositing an under layer prior to the deposition of the polymer layer.
10. A method as claimed in claim 9, wherein the under layer is deposited by chemical vapor deposition.
11. A method as claimed in claim 10, wherein the wafer is preheated prior to the under layer deposition.
12. A method as claimed in claim 4, further comprising depositing a capping layer on the polymer layer after substantially all the water and/or OH has been removed from the polymer layer.
13. A method as claimed in claim 12, wherein the capping layer is SiO2.
14. A method as claimed in claim 12, including heat treating the wafer after the capping layer has been deposited.
15. A method as claimed in claim 1, wherein the wafer is located on a platen maintained at or below the dew point of the silicon-containing vapour.
16. A method as claimed in claim 15, wherein the wafer is lifted from platen for any processing step involving or causing heating of the wafer.
17. A method as claimed in claim 16, wherein the lifted position lies between the platen and a wafer load/unloaded position.
18. A method as claimed in claim 1, wherein the compound is hydrogen peroxide of between 45% and 55% concentration.
19. A method as claimed in claim 18, wherein the concentration of the hydrogen peroxide is 50%.
20. A method as claimed in claim 1, wherein the silicon-containing gas or vapour and the compound are reacted in a chemical vapour deposition process.
21. A method as claimed in claim 20, wherein the reaction takes place between electrodes and wherein the silicon-containing gas or vapour and the compound are kept apart until they are introduced between the electrodes.
22. A method as claimed in claim 1, wherein the gas is SiH4 and the compound is H2O2 and there is more H2O2 than SiH4.
23. A method as claimed in claim 22, wherein the H2O2: SiH4 ratio is of the order of 3:1.
24. A method as claimed in claim 1, wherein the chamber is washed through with the compound between at least two processing steps.
25. A method of treating a semi-conductor wafer, said method steps consisting essentially of:
positioning the wafer in a chamber introducing into the chamber silicon-containing gas or vapour and a compound containing peroxide bonding, in vapour form, which gas or vapour and compound are capable of reacting spontaneously to form a short-chain polymers and reacting the silicon-containing gas or vapour with the compound to form the short-chain polymer on the wafer to form a generally planar layer.
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GB929214243A GB9214243D0 (en) 1992-07-04 1992-07-04 A method of treating a semi-conductor wafer
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GB929221519A GB9221519D0 (en) 1992-10-14 1992-10-14 A method of treating a semi-conductor wafer
GB929221520A GB9221520D0 (en) 1992-10-14 1992-10-14 A method of treating a semiconductor wafer
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