CA2107174A1 - Epitaxial Magnesium Oxide as a Buffer Layer on (111) Tetrahedral Semiconductors - Google Patents

Epitaxial Magnesium Oxide as a Buffer Layer on (111) Tetrahedral Semiconductors

Info

Publication number
CA2107174A1
CA2107174A1 CA2107174A CA2107174A CA2107174A1 CA 2107174 A1 CA2107174 A1 CA 2107174A1 CA 2107174 A CA2107174 A CA 2107174A CA 2107174 A CA2107174 A CA 2107174A CA 2107174 A1 CA2107174 A1 CA 2107174A1
Authority
CA
Canada
Prior art keywords
layer
epitaxial
mgo
magnesium oxide
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2107174A
Other languages
French (fr)
Other versions
CA2107174C (en
Inventor
David K. Fork
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of CA2107174A1 publication Critical patent/CA2107174A1/en
Application granted granted Critical
Publication of CA2107174C publication Critical patent/CA2107174C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0576—Processes for depositing or forming superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/703—Microelectronic device with superconducting conduction line
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/873—Active solid-state device

Abstract

An article of manufacture having an epitaxial (111) magnesium oxide (MgO) layer, suitable for use as a buffer layer, on a (111) surface of a tetrahedral semiconductor substrate, and method for its manufacture is described.. The article may further include an epitaxial oxide overlayer on the (111) MgO layer. The overlayer may be a conducting, superconducting, and/or ferroelectric oxide layer.
The method of producing the epitaxial (111) magnesium oxide (MgO) layer on the (111) surface of a tetrahedral semiconductor substrate proceeds at low temperature. The method may further include steps for forming the epitaxial oxide layer on the (111) MgO layer. The methods include the steps of preparing the (111) surface of a tetrahedral semiconductor substrate for deposition and the low temperature depositing of an MgO layer on the prepared surface. Further steps may include the depositing of the oxide layer over the MgO layer.
CA002107174A 1992-12-02 1993-09-28 Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors Expired - Lifetime CA2107174C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/985,086 US5323023A (en) 1992-12-02 1992-12-02 Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors
US985086 1992-12-02

Publications (2)

Publication Number Publication Date
CA2107174A1 true CA2107174A1 (en) 1994-06-03
CA2107174C CA2107174C (en) 1998-07-28

Family

ID=25531187

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002107174A Expired - Lifetime CA2107174C (en) 1992-12-02 1993-09-28 Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors

Country Status (4)

Country Link
US (1) US5323023A (en)
EP (1) EP0600658A3 (en)
JP (1) JPH06216051A (en)
CA (1) CA2107174C (en)

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US5514484A (en) * 1992-11-05 1996-05-07 Fuji Xerox Co., Ltd. Oriented ferroelectric thin film
US5347157A (en) * 1992-12-17 1994-09-13 Eastman Kodak Company Multilayer structure having a (111)-oriented buffer layer
JPH06196648A (en) * 1992-12-25 1994-07-15 Fuji Xerox Co Ltd Oriented ferroelectric thin film device
EP0617439B1 (en) * 1993-03-25 2003-01-08 Matsushita Electric Industrial Co., Ltd. Thin film capacitor and method of manufacturing the same
JP2924574B2 (en) * 1993-05-31 1999-07-26 富士ゼロックス株式会社 Oriented ferroelectric thin film device
MXPA94009540A (en) * 1993-07-30 2005-04-29 Martin Marietta Energy Systems Process for growing a film epitaxially upon an oxide surface and structures formed with the process.
US5693140A (en) * 1993-07-30 1997-12-02 Lockheed Martin Energy Systems, Inc. Process for growing a film epitaxially upon a MgO surface
US5527766A (en) * 1993-12-13 1996-06-18 Superconductor Technologies, Inc. Method for epitaxial lift-off for oxide films utilizing superconductor release layers
US5576879A (en) * 1994-01-14 1996-11-19 Fuji Xerox Co., Ltd. Composite optical modulator
US5866238A (en) * 1994-05-05 1999-02-02 Minolta Co., Ltd. Ferroelectric thin film device and its process
US5654229A (en) * 1995-04-26 1997-08-05 Xerox Corporation Method for replicating periodic nonlinear coefficient patterning during and after growth of epitaxial ferroelectric oxide films
US6023082A (en) * 1996-08-05 2000-02-08 Lockheed Martin Energy Research Corporation Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material
US5830270A (en) * 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class
US6020216A (en) * 1996-08-30 2000-02-01 Texas Instruments Incorporated Thermal detector with stress-aligned thermally sensitive element and method
US6248394B1 (en) * 1998-08-14 2001-06-19 Agere Systems Guardian Corp. Process for fabricating device comprising lead zirconate titanate
US6605151B1 (en) 1999-11-29 2003-08-12 Northwestern University Oxide thin films and composites and related methods of deposition
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
AU2001276964A1 (en) * 2000-07-24 2002-02-05 Motorola, Inc. Integrated radiation emitting system and process for fabricating same
KR100370504B1 (en) * 2000-08-03 2003-01-30 한국화학연구원 Epitaxial growth of a high quality magnesium oxide film using a cubic silicon carbide buffer layer on a silicon (100) substrate
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US6806202B2 (en) 2002-12-03 2004-10-19 Motorola, Inc. Method of removing silicon oxide from a surface of a substrate
US6891284B2 (en) * 2003-04-18 2005-05-10 David A Tilley Electronic timer with photosensor
FR2921200B1 (en) * 2007-09-18 2009-12-18 Centre Nat Rech Scient EPITAXIC MONOLITHIC SEMICONDUCTOR HETEROSTRUCTURES AND PROCESS FOR THEIR MANUFACTURE
US8299351B2 (en) * 2009-02-24 2012-10-30 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Epitaxial growth of III-V compounds on (111) silicon for solar cells
US8685802B2 (en) * 2010-12-29 2014-04-01 Universityof North Texas Graphene formation on dielectrics and electronic devices formed therefrom
CN103265058B (en) * 2013-05-20 2014-10-29 复旦大学 Synthetic method of {111} crystal face preferred magnesium oxide material
WO2019173448A1 (en) * 2018-03-06 2019-09-12 Cornell University Epitaxial semiconductor/superconductor heterostructures

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JP2797186B2 (en) * 1988-05-06 1998-09-17 住友電気工業株式会社 Semiconductor substrate having superconductor layer
JPH04500198A (en) * 1988-08-19 1992-01-16 リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミネソタ Preparation of superconducting ceramic oxide using ozone
US4996187A (en) * 1988-10-17 1991-02-26 Allied-Signal Inc. Epitaxial Ba-Y-Cu-O superconductor film
US5032568A (en) * 1989-09-01 1991-07-16 Regents Of The University Of Minnesota Deposition of superconducting thick films by spray inductively coupled plasma method

Also Published As

Publication number Publication date
US5323023A (en) 1994-06-21
JPH06216051A (en) 1994-08-05
EP0600658A2 (en) 1994-06-08
CA2107174C (en) 1998-07-28
EP0600658A3 (en) 1995-01-04

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