CA2107174A1 - Epitaxial Magnesium Oxide as a Buffer Layer on (111) Tetrahedral Semiconductors - Google Patents
Epitaxial Magnesium Oxide as a Buffer Layer on (111) Tetrahedral SemiconductorsInfo
- Publication number
- CA2107174A1 CA2107174A1 CA2107174A CA2107174A CA2107174A1 CA 2107174 A1 CA2107174 A1 CA 2107174A1 CA 2107174 A CA2107174 A CA 2107174A CA 2107174 A CA2107174 A CA 2107174A CA 2107174 A1 CA2107174 A1 CA 2107174A1
- Authority
- CA
- Canada
- Prior art keywords
- layer
- epitaxial
- mgo
- magnesium oxide
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming superconductor layers
- H10N60/0576—Processes for depositing or forming superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
- Y10S505/703—Microelectronic device with superconducting conduction line
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/873—Active solid-state device
Abstract
An article of manufacture having an epitaxial (111) magnesium oxide (MgO) layer, suitable for use as a buffer layer, on a (111) surface of a tetrahedral semiconductor substrate, and method for its manufacture is described.. The article may further include an epitaxial oxide overlayer on the (111) MgO layer. The overlayer may be a conducting, superconducting, and/or ferroelectric oxide layer.
The method of producing the epitaxial (111) magnesium oxide (MgO) layer on the (111) surface of a tetrahedral semiconductor substrate proceeds at low temperature. The method may further include steps for forming the epitaxial oxide layer on the (111) MgO layer. The methods include the steps of preparing the (111) surface of a tetrahedral semiconductor substrate for deposition and the low temperature depositing of an MgO layer on the prepared surface. Further steps may include the depositing of the oxide layer over the MgO layer.
The method of producing the epitaxial (111) magnesium oxide (MgO) layer on the (111) surface of a tetrahedral semiconductor substrate proceeds at low temperature. The method may further include steps for forming the epitaxial oxide layer on the (111) MgO layer. The methods include the steps of preparing the (111) surface of a tetrahedral semiconductor substrate for deposition and the low temperature depositing of an MgO layer on the prepared surface. Further steps may include the depositing of the oxide layer over the MgO layer.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/985,086 US5323023A (en) | 1992-12-02 | 1992-12-02 | Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors |
US985086 | 1992-12-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2107174A1 true CA2107174A1 (en) | 1994-06-03 |
CA2107174C CA2107174C (en) | 1998-07-28 |
Family
ID=25531187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002107174A Expired - Lifetime CA2107174C (en) | 1992-12-02 | 1993-09-28 | Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors |
Country Status (4)
Country | Link |
---|---|
US (1) | US5323023A (en) |
EP (1) | EP0600658A3 (en) |
JP (1) | JPH06216051A (en) |
CA (1) | CA2107174C (en) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5514484A (en) * | 1992-11-05 | 1996-05-07 | Fuji Xerox Co., Ltd. | Oriented ferroelectric thin film |
US5347157A (en) * | 1992-12-17 | 1994-09-13 | Eastman Kodak Company | Multilayer structure having a (111)-oriented buffer layer |
JPH06196648A (en) * | 1992-12-25 | 1994-07-15 | Fuji Xerox Co Ltd | Oriented ferroelectric thin film device |
EP0617439B1 (en) * | 1993-03-25 | 2003-01-08 | Matsushita Electric Industrial Co., Ltd. | Thin film capacitor and method of manufacturing the same |
JP2924574B2 (en) * | 1993-05-31 | 1999-07-26 | 富士ゼロックス株式会社 | Oriented ferroelectric thin film device |
MXPA94009540A (en) * | 1993-07-30 | 2005-04-29 | Martin Marietta Energy Systems | Process for growing a film epitaxially upon an oxide surface and structures formed with the process. |
US5693140A (en) * | 1993-07-30 | 1997-12-02 | Lockheed Martin Energy Systems, Inc. | Process for growing a film epitaxially upon a MgO surface |
US5527766A (en) * | 1993-12-13 | 1996-06-18 | Superconductor Technologies, Inc. | Method for epitaxial lift-off for oxide films utilizing superconductor release layers |
US5576879A (en) * | 1994-01-14 | 1996-11-19 | Fuji Xerox Co., Ltd. | Composite optical modulator |
US5866238A (en) * | 1994-05-05 | 1999-02-02 | Minolta Co., Ltd. | Ferroelectric thin film device and its process |
US5654229A (en) * | 1995-04-26 | 1997-08-05 | Xerox Corporation | Method for replicating periodic nonlinear coefficient patterning during and after growth of epitaxial ferroelectric oxide films |
US6023082A (en) * | 1996-08-05 | 2000-02-08 | Lockheed Martin Energy Research Corporation | Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material |
US5830270A (en) * | 1996-08-05 | 1998-11-03 | Lockheed Martin Energy Systems, Inc. | CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class |
US6020216A (en) * | 1996-08-30 | 2000-02-01 | Texas Instruments Incorporated | Thermal detector with stress-aligned thermally sensitive element and method |
US6248394B1 (en) * | 1998-08-14 | 2001-06-19 | Agere Systems Guardian Corp. | Process for fabricating device comprising lead zirconate titanate |
US6605151B1 (en) | 1999-11-29 | 2003-08-12 | Northwestern University | Oxide thin films and composites and related methods of deposition |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
AU2001276964A1 (en) * | 2000-07-24 | 2002-02-05 | Motorola, Inc. | Integrated radiation emitting system and process for fabricating same |
KR100370504B1 (en) * | 2000-08-03 | 2003-01-30 | 한국화학연구원 | Epitaxial growth of a high quality magnesium oxide film using a cubic silicon carbide buffer layer on a silicon (100) substrate |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
US6806202B2 (en) | 2002-12-03 | 2004-10-19 | Motorola, Inc. | Method of removing silicon oxide from a surface of a substrate |
US6891284B2 (en) * | 2003-04-18 | 2005-05-10 | David A Tilley | Electronic timer with photosensor |
FR2921200B1 (en) * | 2007-09-18 | 2009-12-18 | Centre Nat Rech Scient | EPITAXIC MONOLITHIC SEMICONDUCTOR HETEROSTRUCTURES AND PROCESS FOR THEIR MANUFACTURE |
US8299351B2 (en) * | 2009-02-24 | 2012-10-30 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Epitaxial growth of III-V compounds on (111) silicon for solar cells |
US8685802B2 (en) * | 2010-12-29 | 2014-04-01 | Universityof North Texas | Graphene formation on dielectrics and electronic devices formed therefrom |
CN103265058B (en) * | 2013-05-20 | 2014-10-29 | 复旦大学 | Synthetic method of {111} crystal face preferred magnesium oxide material |
WO2019173448A1 (en) * | 2018-03-06 | 2019-09-12 | Cornell University | Epitaxial semiconductor/superconductor heterostructures |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4994433A (en) * | 1987-05-22 | 1991-02-19 | Massachusetts Institute Of Technology | Preparation of thin film superconducting oxides |
US4980339A (en) * | 1987-07-29 | 1990-12-25 | Matsushita Electric Industrial Co., Ltd. | Superconductor structure |
JPH0688858B2 (en) * | 1987-08-21 | 1994-11-09 | 松下電器産業株式会社 | Superconductor |
US5179070A (en) * | 1988-04-30 | 1993-01-12 | Sumitomo Electric Industries, Ltd. | Semiconductor substrate having a superconducting thin film with a buffer layer in between |
JP2797186B2 (en) * | 1988-05-06 | 1998-09-17 | 住友電気工業株式会社 | Semiconductor substrate having superconductor layer |
JPH04500198A (en) * | 1988-08-19 | 1992-01-16 | リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミネソタ | Preparation of superconducting ceramic oxide using ozone |
US4996187A (en) * | 1988-10-17 | 1991-02-26 | Allied-Signal Inc. | Epitaxial Ba-Y-Cu-O superconductor film |
US5032568A (en) * | 1989-09-01 | 1991-07-16 | Regents Of The University Of Minnesota | Deposition of superconducting thick films by spray inductively coupled plasma method |
-
1992
- 1992-12-02 US US07/985,086 patent/US5323023A/en not_active Expired - Lifetime
-
1993
- 1993-09-28 CA CA002107174A patent/CA2107174C/en not_active Expired - Lifetime
- 1993-11-23 EP EP93309338A patent/EP0600658A3/en not_active Withdrawn
- 1993-11-24 JP JP5292907A patent/JPH06216051A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US5323023A (en) | 1994-06-21 |
JPH06216051A (en) | 1994-08-05 |
EP0600658A2 (en) | 1994-06-08 |
CA2107174C (en) | 1998-07-28 |
EP0600658A3 (en) | 1995-01-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request |