CA2087533A1 - Three Terminal Non-Inverting Transistor Switch - Google Patents

Three Terminal Non-Inverting Transistor Switch

Info

Publication number
CA2087533A1
CA2087533A1 CA 2087533 CA2087533A CA2087533A1 CA 2087533 A1 CA2087533 A1 CA 2087533A1 CA 2087533 CA2087533 CA 2087533 CA 2087533 A CA2087533 A CA 2087533A CA 2087533 A1 CA2087533 A1 CA 2087533A1
Authority
CA
Canada
Prior art keywords
electrode
terminal
source electrode
coupled
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA 2087533
Other languages
French (fr)
Other versions
CA2087533C (en
Inventor
James S. Congdon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2087533A1 publication Critical patent/CA2087533A1/en
Application granted granted Critical
Publication of CA2087533C publication Critical patent/CA2087533C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Abstract

A three terminal non-inverting transistor switch includes in one embodiment (11) a first terminal (13), a second terminal (15) and a third terminal (17), a depletion mode field effect transistor (FET) (19) having a drain electrode (23) and a source electrode (25) that define a current path in the transistor (19) and are connected to the third terminal (17) and second terminal (15), respectively, and a gate electrode (27) for controlling the current flow in the transistor current path. A negative voltage converter (21) having an input electrode (29), an output electrode (31) and a return electrode (33) has its output electrode (31) coupled to the gate electrode (27) in the FET (19), its return electrode (33) being coupled to the source electrode (25) and its input electrode (29) coupled to the first terminal (13). In operation the current flow between the drain electrode (23) and the source electrode (25) will be high when a low signal is applied to the input electrode (29) with respect to the source electrode (25) and will be lower when a higher signal is applied to the input electrode (29) with respect to the source electrode (25).
CA002087533A 1990-08-03 1991-08-01 Three terminal non-inverting transistor switch Expired - Lifetime CA2087533C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/562,215 US5134323A (en) 1990-08-03 1990-08-03 Three terminal noninverting transistor switch
US562,215 1990-08-03

Publications (2)

Publication Number Publication Date
CA2087533A1 true CA2087533A1 (en) 1992-02-04
CA2087533C CA2087533C (en) 1998-08-04

Family

ID=24245303

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002087533A Expired - Lifetime CA2087533C (en) 1990-08-03 1991-08-01 Three terminal non-inverting transistor switch

Country Status (7)

Country Link
US (1) US5134323A (en)
EP (1) EP0541700B1 (en)
JP (1) JP2839206B2 (en)
AT (1) ATE166193T1 (en)
CA (1) CA2087533C (en)
DE (1) DE69129411T2 (en)
WO (1) WO1992002985A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07175535A (en) * 1993-12-16 1995-07-14 Nec Corp Power circuit for fet amplifier
DE4412274C1 (en) * 1994-04-09 1995-05-04 Telefunken Microelectron Switch with a first switch element constructed as bipolar transistor
US5862887A (en) * 1996-11-07 1999-01-26 Otis Elevator Company High performance linear induction motor door operator
US6259292B1 (en) 1999-04-21 2001-07-10 James S. Congdon Three-terminal inverting hysteretic transistor switch
US6639777B1 (en) 2000-10-31 2003-10-28 James S. Congdon Electronic timer switch
CA2435334C (en) 2001-01-19 2009-03-24 James S. Congdon Three terminal noninverting transistor switch
US7170335B2 (en) * 2004-03-08 2007-01-30 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Driver circuit for driving a light source of an optical pointing device
WO2012153473A1 (en) * 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP3855624A1 (en) * 2020-01-22 2021-07-28 Infineon Technologies AG Overvoltage protection circuit and device

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767942A (en) * 1971-03-10 1973-10-23 Multiplex Communicat Inc Solid state relay
US4117353A (en) * 1976-12-23 1978-09-26 General Electric Company Controlled current sink
US4128775A (en) * 1977-06-22 1978-12-05 National Semiconductor Corporation Voltage translator for interfacing TTL and CMOS circuits
US4224535A (en) * 1978-08-08 1980-09-23 General Electric Company Efficient base drive circuit for high current transistors
JPS5931155B2 (en) * 1979-10-11 1984-07-31 インターナシヨナルビジネス マシーンズ コーポレーシヨン sense amplifier circuit
US4346310A (en) * 1980-05-09 1982-08-24 Motorola, Inc. Voltage booster circuit
JPS5713817A (en) * 1980-06-27 1982-01-23 Morita Mfg Co Ltd Gate driving circuit of electrostatic inductive transistor
US4586004A (en) * 1983-06-27 1986-04-29 Saber Technology Corp. Logic and amplifier cells
KR900008276B1 (en) * 1985-02-08 1990-11-10 가부시끼가이샤 도시바 Protection circuit for an insulated gate bipolar transistor utilizing a two-step turn off
JPS62114539U (en) * 1986-01-09 1987-07-21
US4804866A (en) * 1986-03-24 1989-02-14 Matsushita Electric Works, Ltd. Solid state relay
DE3621396A1 (en) * 1986-06-26 1988-01-14 Bosch Gmbh Robert TRANSISTOR ARRANGEMENT WITH A POWER AMPLIFIER TRANSISTOR
US4839537A (en) * 1986-11-29 1989-06-13 Kabushiki Kaisha Toshiba BicMO logic circuit
JPS63193720A (en) * 1987-02-06 1988-08-11 Toshiba Corp Logic circuit
US4728817A (en) * 1987-02-09 1988-03-01 Westinghouse Electric Corp. Power transistor drive circuit
DE3725390A1 (en) * 1987-07-31 1989-02-09 Wickmann Werke Gmbh Switching protection device
NL8800509A (en) * 1988-02-29 1989-09-18 Philips Nv TWO-DIMENSIONAL LASER ARRAY.
KR910005794B1 (en) * 1988-06-09 1991-08-03 삼성전자 주식회사 Semiconductor time-delay element
JPH073944B2 (en) * 1988-09-16 1995-01-18 富士電機株式会社 Method for driving insulated gate semiconductor device
US4949213A (en) * 1988-11-16 1990-08-14 Fuji Electric Co., Ltd. Drive circuit for use with voltage-drive semiconductor device
US4922129A (en) * 1989-01-26 1990-05-01 National Semiconductor Corporation Feed forward darlington circuit with reduced NPN reverse beta sensitivity
GB2228639B (en) * 1989-02-17 1992-07-15 Motorola Semiconducteurs Protected darlington transistor arrangement
US4999518A (en) * 1989-12-08 1991-03-12 International Business Machines Corp. MOS switching circuit having gate enhanced lateral bipolar transistor
US5079447A (en) * 1990-03-20 1992-01-07 Integrated Device Technology BiCMOS gates with improved driver stages

Also Published As

Publication number Publication date
WO1992002985A1 (en) 1992-02-20
EP0541700B1 (en) 1998-05-13
EP0541700A1 (en) 1993-05-19
JP2839206B2 (en) 1998-12-16
CA2087533C (en) 1998-08-04
EP0541700A4 (en) 1994-07-27
JPH06500210A (en) 1994-01-06
DE69129411D1 (en) 1998-06-18
DE69129411T2 (en) 1998-12-24
ATE166193T1 (en) 1998-05-15
US5134323A (en) 1992-07-28

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Legal Events

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EEER Examination request
MKEX Expiry