CA2009247C - Multilayered intermetallic connection for semiconductor devices - Google Patents
Multilayered intermetallic connection for semiconductor devicesInfo
- Publication number
- CA2009247C CA2009247C CA002009247A CA2009347A CA2009247C CA 2009247 C CA2009247 C CA 2009247C CA 002009247 A CA002009247 A CA 002009247A CA 2009347 A CA2009347 A CA 2009347A CA 2009247 C CA2009247 C CA 2009247C
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- Prior art keywords
- layer
- copper
- aluminum
- deposited
- structure according
- Prior art date
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- Expired - Lifetime
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- 239000004065 semiconductor Substances 0.000 title claims description 8
- 239000010949 copper Substances 0.000 claims abstract description 55
- 229910052802 copper Inorganic materials 0.000 claims abstract description 51
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 238000005272 metallurgy Methods 0.000 claims abstract description 31
- 238000001465 metallisation Methods 0.000 claims abstract description 29
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- -1 IVA metals Chemical class 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 229910010039 TiAl3 Inorganic materials 0.000 claims 3
- 230000000737 periodic effect Effects 0.000 claims 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 150000003609 titanium compounds Chemical class 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract description 9
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 230000009972 noncorrosive effect Effects 0.000 abstract description 2
- 229910016570 AlCu Inorganic materials 0.000 abstract 1
- 229910000765 intermetallic Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 62
- 239000010408 film Substances 0.000 description 13
- 238000005260 corrosion Methods 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 12
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 11
- 239000000203 mixture Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910018182 Al—Cu Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910010038 TiAl Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 206010022998 Irritability Diseases 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 241000206607 Porphyra umbilicalis Species 0.000 description 1
- 241000593989 Scardinius erythrophthalmus Species 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009867 copper metallurgy Methods 0.000 description 1
- QUQFTIVBFKLPCL-UHFFFAOYSA-L copper;2-amino-3-[(2-amino-2-carboxylatoethyl)disulfanyl]propanoate Chemical compound [Cu+2].[O-]C(=O)C(N)CSSCC(N)C([O-])=O QUQFTIVBFKLPCL-UHFFFAOYSA-L 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R9/00—Supplementary fittings on vehicle exterior for carrying loads, e.g. luggage, sports gear or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R13/00—Elements for body-finishing, identifying, or decorating; Arrangements or adaptations for advertising purposes
- B60R13/01—Liners for load platforms or load compartments
Abstract
ABSTRACT A sputtered low copper concentration multilayered, device interconnect metallurgy structure is disclosed herein. The interconnect metallization structure comprises a sputtered aluminum-copper (< 2) weight percent copper conductor. In the preferred embodiment, the AlCu conductor has formed on one or both of its surfaces a layer of an intermetallic compound formed from a Group IVA metal and aluminum. The Group IVA metal is deposited by sputtering. Optionally, onto said top intermetallic layer is further deposited a non-reflective, non-corrosive, etch-stop, capping layer.
Description
; 20092~7 MUL?ILAYERED INTERMETALLIC CONMECTION FOR
SEMICONDUCTOR DEVICES
. .
sac~qround of the Invention Field of the Invention This invention relates to the device structure for the interconnection of semiconductor devices on a substrate and more particularly to a multilayered sputtered interconnect metallurgy structure which structure includes a low percent copper content aluminum/copper conductor.
:` :
Description of Related Art Thin narrow interconnections have been used for ;, some years for device interconnection purposes in the semiconductor integrated circuit industry. It is ! 15 predicted that performance of these devices in the ;~ future will be limited by the performance of the device interconnection at the submicron level. At the submicron level, various technical problems are known to occur. While aluminum has been the preferred interconnection metal, as device dimensions are scaled down and current density increases, pure aluminum has il been known to be susceptible to the problems of electromigration and hillock growth. To overcome the problems experienced with pure aluminum, aluminum has been alloyed with copper to form aluminum-copper.
However, high percentage aluminum-copper (> 2%) is known to be difficult to dry etch and corrodes easily.
, In an effort to improve on the use of aluminum-copper as the interconnection metallurgy, aluminum-copper has been taught to be layered with a refractory metal (i.e., U.S. Patent No. 4,017,890).
This patent teaches a method and resulting structure ! for forming narrow intermetallic stripes which carry " FI9-88-038 -l--' *;
.~ .
~' 2~9247 high currents on bodies such as semiconductors, integrated circuits, etc., wherein the conductive stripe includes aluminum or aluminum-copper with at least one transition metal. While the aluminum-copper and transition metal structure has been known to improve the electromigration problems associated with aluminum-copper, the problems of etching and corrosion, as well as, the complete elimination of hillocks have not been solved.
s 10 As known in the art, hillocks are known to result from the large differences between the thermal expansion coefficients of the metal interconnect lines and the substrate. To eliminate and minimi~e hillock ... .
formation, it has been known in the art to use a ~ 15 multilayered structure instead of a single layer of 'r the interconnect metallurgy. An effective reduction in hillock formation has been found to be achieved by using a multilayered structure of aluminum or aluminum intermetallic with a layer of refractory metal.
Wherefore, a typical interconnect metallurgy structure would comprise a layered structure of aluminum silicon compound onto which there has been deposited, a layer of refractory metal, such as, titanium (see article "Homogeneous and Layered Films of Aluminum/Silicon with Titanium For Multilevel Interconnects", 1988 IEEE, V-MIC Conference, June 25-26, 1985).
There have also been refinements to this layered i metal structure to provide a lower resistivity,hillock free, interconnect metallurgy. These refinements include the incorporation of a barrier ~, metal of, for example, titanium tungsten or titanium nitride under the aluminum silicon to prevent contact spiking and prevent the formation of ternary compounds in the aluminum silicon alloy (see article "Multilayerd Interconnections For VLSI" MRS Symposia ;~ Proceedings, Fall, 1987).
;~ In addition, in this area, there have also been :',`
:
~!, . . .
..
'- ' ' .
... .
~ ! .
2 ~ O 9 2 Y7 other proposed device interconnect structures to reduce resistivity and provide a more planar and defect free interconnect structure.
For example, IBM Technical Disclosure Bulletin, Vol. 21, No. 11, April, 1979, pp. 4527-4528, teaches the enhancement of the metallurgy for the interconnection due to sputtered deposition.
~, r~oreover, the feature of using a capping layer to improve perrormance has been proposed in IBM TDB Vol.
17, No. lA, 1984 and TDB Vol. 21, No. 2, July 1978.
However, no structure has been discovered which can satisfy all performance criteria providing a low resi~tance, hillock free, corrosion resistant, etchable, interconnection metallurgy structure.
It is, therefore, an object of the present !, invention to provide sputtered low weight percent copper (< 2~) content aluminum/copper conductor for device interconnection on a substrate with superior electromigration characteristics.
It is a still further object of the present inventiGn to develop a multilayered interconnect metallurgy structure that is hillock free, dry etchable and corrosion resistant.
;~
It is another object of the present invention to provide a multilayered interconnect metallurgy structure which has a low resistivity.
,.,., ~, Summarv of the Invention A sputtered low-copper concentration multilayered, device interconnect metallurgy structure i 30 is disclosed herein. The interconnect metallization ~` structure comprises a sputtered a~uminum-copper (~ 2) weight percent copper conductor. In the preferred embodiment, the conductor layer is formed with a top and bottom layer of an intermetallic, said intermetallic also being sputtered and being of a * Registered trade mark ....
,, . . .
.
~ :' 2~Q~247 thickness of approximately 700A. Onto said ; intermetallic layer is further deposited an etch stop, and non-corrosive, protective capping layer. ;~
.
Brief Description of the Drawinqs ' S FIG. l is a cross-sectional view of the preferred , embodiment of an interconnect metallurgy according to -~, the subject irvention.
,j FIGS. 2 through 8 are cross-sectional views of !'' the process for building the preferred interconnect ,~ 10 metallurgv of the subject invention in a step-by-step fashion.
FIG. 9 is a graph of the lifetime (hours) versus weight percent copper for interconnect metalluries of i the subject invention as compared to prior art ', 15 interconnect metallizations.
SEMICONDUCTOR DEVICES
. .
sac~qround of the Invention Field of the Invention This invention relates to the device structure for the interconnection of semiconductor devices on a substrate and more particularly to a multilayered sputtered interconnect metallurgy structure which structure includes a low percent copper content aluminum/copper conductor.
:` :
Description of Related Art Thin narrow interconnections have been used for ;, some years for device interconnection purposes in the semiconductor integrated circuit industry. It is ! 15 predicted that performance of these devices in the ;~ future will be limited by the performance of the device interconnection at the submicron level. At the submicron level, various technical problems are known to occur. While aluminum has been the preferred interconnection metal, as device dimensions are scaled down and current density increases, pure aluminum has il been known to be susceptible to the problems of electromigration and hillock growth. To overcome the problems experienced with pure aluminum, aluminum has been alloyed with copper to form aluminum-copper.
However, high percentage aluminum-copper (> 2%) is known to be difficult to dry etch and corrodes easily.
, In an effort to improve on the use of aluminum-copper as the interconnection metallurgy, aluminum-copper has been taught to be layered with a refractory metal (i.e., U.S. Patent No. 4,017,890).
This patent teaches a method and resulting structure ! for forming narrow intermetallic stripes which carry " FI9-88-038 -l--' *;
.~ .
~' 2~9247 high currents on bodies such as semiconductors, integrated circuits, etc., wherein the conductive stripe includes aluminum or aluminum-copper with at least one transition metal. While the aluminum-copper and transition metal structure has been known to improve the electromigration problems associated with aluminum-copper, the problems of etching and corrosion, as well as, the complete elimination of hillocks have not been solved.
s 10 As known in the art, hillocks are known to result from the large differences between the thermal expansion coefficients of the metal interconnect lines and the substrate. To eliminate and minimi~e hillock ... .
formation, it has been known in the art to use a ~ 15 multilayered structure instead of a single layer of 'r the interconnect metallurgy. An effective reduction in hillock formation has been found to be achieved by using a multilayered structure of aluminum or aluminum intermetallic with a layer of refractory metal.
Wherefore, a typical interconnect metallurgy structure would comprise a layered structure of aluminum silicon compound onto which there has been deposited, a layer of refractory metal, such as, titanium (see article "Homogeneous and Layered Films of Aluminum/Silicon with Titanium For Multilevel Interconnects", 1988 IEEE, V-MIC Conference, June 25-26, 1985).
There have also been refinements to this layered i metal structure to provide a lower resistivity,hillock free, interconnect metallurgy. These refinements include the incorporation of a barrier ~, metal of, for example, titanium tungsten or titanium nitride under the aluminum silicon to prevent contact spiking and prevent the formation of ternary compounds in the aluminum silicon alloy (see article "Multilayerd Interconnections For VLSI" MRS Symposia ;~ Proceedings, Fall, 1987).
;~ In addition, in this area, there have also been :',`
:
~!, . . .
..
'- ' ' .
... .
~ ! .
2 ~ O 9 2 Y7 other proposed device interconnect structures to reduce resistivity and provide a more planar and defect free interconnect structure.
For example, IBM Technical Disclosure Bulletin, Vol. 21, No. 11, April, 1979, pp. 4527-4528, teaches the enhancement of the metallurgy for the interconnection due to sputtered deposition.
~, r~oreover, the feature of using a capping layer to improve perrormance has been proposed in IBM TDB Vol.
17, No. lA, 1984 and TDB Vol. 21, No. 2, July 1978.
However, no structure has been discovered which can satisfy all performance criteria providing a low resi~tance, hillock free, corrosion resistant, etchable, interconnection metallurgy structure.
It is, therefore, an object of the present !, invention to provide sputtered low weight percent copper (< 2~) content aluminum/copper conductor for device interconnection on a substrate with superior electromigration characteristics.
It is a still further object of the present inventiGn to develop a multilayered interconnect metallurgy structure that is hillock free, dry etchable and corrosion resistant.
;~
It is another object of the present invention to provide a multilayered interconnect metallurgy structure which has a low resistivity.
,.,., ~, Summarv of the Invention A sputtered low-copper concentration multilayered, device interconnect metallurgy structure i 30 is disclosed herein. The interconnect metallization ~` structure comprises a sputtered a~uminum-copper (~ 2) weight percent copper conductor. In the preferred embodiment, the conductor layer is formed with a top and bottom layer of an intermetallic, said intermetallic also being sputtered and being of a * Registered trade mark ....
,, . . .
.
~ :' 2~Q~247 thickness of approximately 700A. Onto said ; intermetallic layer is further deposited an etch stop, and non-corrosive, protective capping layer. ;~
.
Brief Description of the Drawinqs ' S FIG. l is a cross-sectional view of the preferred , embodiment of an interconnect metallurgy according to -~, the subject irvention.
,j FIGS. 2 through 8 are cross-sectional views of !'' the process for building the preferred interconnect ,~ 10 metallurgv of the subject invention in a step-by-step fashion.
FIG. 9 is a graph of the lifetime (hours) versus weight percent copper for interconnect metalluries of i the subject invention as compared to prior art ', 15 interconnect metallizations.
3 FIG. l0 is a graph of the resistivity versus weight percent copper for various alternative embodiment metallurgies of the subject invention before and after anneal~
Description of the Preferred Embodiments FIG. l is a cross-sectional view of the preferred 3 embodiment of an interconnect metallurgy structure according to the subject invention. FIG. l represents the interconnect structure after being processed through final annealing.
Referring to FIG. l, the interconnect metallurgy is seen to comprise a four-layer structure over an '~ interplanar stud connection l0 surrounded by an ~ insulator 8 to make connection to a device substrate -~ 30 6. The four-layer structure consists of a bottom-l sputtered layer 13 of an intermetallic formed by the ;l! reaction between the conductor layer 14 and ', pre-annealed surface layer 12. The layer 13 is ~, '~ FI9-88-038 -4-,~ .
20~9247 typically 700~ thick and in a preferred embodiment would comprise TiA13. Onto said sputtered intermetallic layer 13 is a sputter-deposited, low percent (< 2) weight percent copper, aluminum-copper, conductor layer 14. After annealing , the layer 14 is typically 8,500A thick and consists of a composition of 99.5~ aluminum and 0.5~ copper (aluminum-.5% copper hereafterj. On layer 14 is a second intermetallic layer 15 of the same thickness and composition as the layer 13. A layer 18 of aluminum-.5% copper or pure aluminum of approximately 100A to 500A thick is then sputter deposited to cap the structure. While this completes the structure for a single interconnect layer according to the subject invention, it should be lS recognized by those skilled in the art that said -, layers can then be repeated in a multiple level ! sequence to complete the interconnect circuit for the devices.
Referring now to FIG. 2, FIG. 2 shows a planar ~ 20 insulator 8 and contact stud 10 ~Jith a Group IVA metal --~ layer 12 sputter deposited thereon. The layer 12 is deposited by the following process. After formation of the device contact metallization 10, the semiconductor wafer would be loaded into a sputtering tool which has been pumped to a low pressure. An in-,; situ sputter clean is then performed to remove any oxide from the contact metal 10 formation on the wafer at this time. This in-situ sputter clean typically is a mild sputter clean, run, for example, at about five minutes at low power (approximately 1,000 watt) in a ~ hiah-pressure argon ambient.
; Following the sputter cleaning, the first level of metallization 12 is then deposited. This first level metallization 12 is comprised of a Group IVA
metal, preferably titanium, deposited on the device contact metallization 10 of the wafer in a blanket formation. This layer 12 is deposited at low power in . . .
-: , , 20092~7 a high pressure, high purity, argon plasma from an ultra-pure titanium target at a rate of about 60A per minute. Preferably, the titanium is deposited to a thickness of approximately 250A.
~ 5 Referring now to FIG. 3, folloS;~ing the deposition i of the layer 12, the interconnect metallization layer ~ 14 is next blanket deposited. The interconnect 3 metallization 14 is preferably aluminum-0.5% copper , (approximately 9,500A thic~). The aluminum-copper is ;~ 10 deposited at high power using a direct current ~, magnetron in a high puritv argon plasma from an ;~ ultra-pure pre-alloyed target typically aluminum-0.5 ~teight percent copper with a deposition rate of about 1,500A per minute.
~; 15 Onto said aluminum-copper interconnect metal-lization 14 is then deposited 50A of a Group IVA
metal similar to the previously deposited metal layer 12 discussed above. Deposition, composition and thickness of said layer 16 is identical to the previously deposited layer 12 (FIG. 4).
From FIG. 5, onto said metal layer 16 is then blanket deposited a suitable capping layer 18 to complete the interconnect metallurgy at this level.
The c~pping layer 18 is preferably comprised of -~ 25 aluminum-.05% copper deposited in the same manner as the conductor aluminum-.05% copper layer 14 as discussed above. The purpose of this layer is to: 1) prevent over-etch of metal layer 16; 2) lim-t the -' amount of light reflection during the subsequent '~ 30 photoresist steps, and 3) to act as a protective layer against corrosion during subsequent processing.
;' Therefore, any layer which would similarly satisfy the requirements of reducing the amount of light reflection and provide protective anodic capping j 35 during subsequent processing would be usable for this layer (e.g. pure aluminum).
.-.
' , ~ FI9-88-038 -6-., .
., .
i~ .
. . , , .. ~, ':
2~2~7 Referring now to FIG. 6, on top of metallization 18, a multilayered photoresist (20, 22 and 24) is then applied to pattern this blanket interconnect metallization. Any number of different photoresist techniques can be used. In particular, multilayered photoresists are well suited for this purpose, as well as, single-layered resists.
, ~ith a multilayered resist as shown in FIG. 6, a ,~, first resist 20 is applied to a thicknesc of approxi-~ 10 mately 1.8 micrometers. In the preferred embodiment `~ this resist is a diazo-quinone novolak photoresist.
;~ The resist 20 is baked in an oven in a nitrogen ! ambient at about 200C for 30 minutes. This resist 20 ~ serves as a sacrificial layer during subsequent metal ,j 15 reactive ion etching (RIE).
Onto said resist 20 is then deposited 200A of a silylating agent 22, such as, HMDS
~ (hexamethyldisilizane). The HMDS 22 serves as a J barrier to the cxygen reactive ion etching which is used to pattern the imaging laver resist ~4.
Onto said HMDS layer 22 is next deposited an .~3 imaging layer resist 24 to a thickness of about '~J, O ~ 9-1 ~ 2 micrometers. Similar to resist 20, imaging~' resist- 24 is a diazo-quinone novolak positive photoresist. The HMDS 22 and imaging resist layer 24 are then baked on a hot plate for 25 minutes at 85C.
The imaging layer resist 24 is then exposed for ~i the specific time required when used in conjunction with a specific exposure tool and associated mask.
The exposed image is developed using conventional developing for the required time depending on the exposure. The wafer is then rinsed and dried and the patterned top imaging layer is UV hardened by exposing it to ultraviolet light for a specific period of time, ~;î 35 typically, 5 to 10 minutes.
Following the patterning of the top imaging resist 24, the HMDS 22 and resist layer 20 are ready ;: .
.
~ FI9-88-038 -7-. , . ~ .
... .
,............................ . . . .
2~2~7 to be removed to expose the metal. The HMDS 22 and the resist 20 are removed by reactive ion etching.
This is accomplished by loading the wafer into a plasma tool and exposing the wafer to a plasma reactive to the HMDS layer 22 (e.g. CF4) and then to a different plasma (e.g. 2) reactive to resist 20. The polymer residues of the remains o~ the HMDS layer 22 and the resist 20 are then removed by dipping in a h solution of a conventional cleaning etch solution.
This reactive ion etching of the HMDS layer 22 and the resist 20, has put a lithographic mask into place for the subsequent reactive ion etching of the underlying blanket metal layers.
The metallurgy can now be reactively ion etched in a multi-step sequence. The first step is to break through any o~:ides which may exist on the top surface of the metallization. Next, most of the metal is ~; removed by reactive ion etching. An over etch is, ,~ then, performed to insure that all of the metal in the ,'~ 20 previous step has been etched away. Finally, a passivation step is performed to prevent any metal corrosion.
~ The reactive ion etch is typically performed in a ; single ~wafer tool under a low pressure. Typical plasma composition, pressure, power and time combinations, for performing the above etches in a step-by-step process can be seen from the following ' Table I. These compositions, pressures, powers and : times should be recognized by those skilled in the art as being flesigned for a specific tool under specific conditions. Any comparable times, compositions, pressure, etc., could be similarlv fabricated to insure the etch of the blanket metallization.
i:, .
'' .
: FI9-88-038 -8-; .
;~
~ ....................................... . .
.:~
., ,.:
:; :
:
2~247 Table I
i Gas Flow (cc/min) Step 1 Step 2 Step 3 Exit BCl 20 12 12 ---, 2 11 11 8 ___ ~, CHC13 5 16 16 ---'I N2 50 50 50 ---CF4 --- ___ ___ 180 ~ 2 20 -, 10 Pressure 375 375 375 0.5 Torr (milli-Torr) Power (Watts) 485 350 350 130 ~ Typical Times 15 sec2-3 min 40 sec 20 sec ~, .
;.~
With the completion of the reactive ion etch, the wafer can then be rinsed and dried.
Referring now to FIG. 7, it can be seen that the reactive ion etch of the metal removes any of the remaining imaging layer resist 24 and most of the the HMDS layer 22 leaving on the surface of the m~tal the resist 20. This resist 20 can be removed by placing ~ the wafer in an oxygen plasma for approximately 45 ! minutes. The wafer is then placed in a developer at ~l room temperature for a short period of time to remove ; any oxides that may have formed in the previous step.
The wafer is again rinsed and dried.
~ With removal of this final layer of the resist ;l 20, the metallization stack can now be annealed by placing the wafer in an oven at 400C in forming gas for 1 hour in order to form TiA13 intermetallic layers 13 and 15 on the top and the bottom of the aluminum-copper layer 14 and to allow grain growth to occur in ;~ . .
the aluminum-copper layer 14.
From FIG. 8, it can be seen that once the metallization stack has been annealed (to the ... .
:;, ~ FI9-88-038 -9-.. . . .
.~ ,' ' ' "; :
., , , , ., : :~ ':' - ' 23~247 structure of FIG. 1) a suitable insulator 26 (e.g., planar quartz or plasma-enhanced CVD oxide or an orgallic insulator such as polyimide) can be blanket deposited over the multilayered interconnect ~' structure. This insulator 26 can then be planarized ~, s and/or patterned for stud connection to the repeating interconnect layers deposited onto the base interconnect layer.
The superior performance of the interconnect metallurgy of the subject invention over that which is ,' 10 known in the prior art can be seen in the following figures. FIG. 9 is a lifetime (hours) versus weight ~ percent copper graph for the electromigration .~ characteristics of both the above-described sputtered four-layered structure and an alternative sputtered three-layer structure (Al/Cu/refractory metal/Al-Cu), , as compared to an evaporated three-layer structure , patterned by lift-off and an evaporated four-layer I, structure, patterned by RIE. From FIG. 9 it can be ;i seen that for all weight percent copper compositions, ~, 20 the sputtered interconnect metallurgies are vastly superior to the evaporated metallurgies.
Fig. 10 is a graph of the resistivity versus weight ~ percent copper for various alternative `~ embodiment metallurgies of the subject invention. The ; 25 metallurgies have been subjected to a 400C forming gas anneal wherein the plots have been taken both before and after said anneal. From the plots it can clearly be seen that the resistivity of the 0.5 weight i percent copper structures are lower than that of the ,~ 30 higher weight percent copper films. Additionally, it can also be seen that the annealed films of the four-layer structure have a lower resistivity than the , annealed films of the three-layer structure.
-I The following Table II is a further comparison of the electromigration characteristics of sputtered ` Al-0.5%Cu metallurgy after annealing with .~
~ FI9~88-038 -10-i .... .
.
. .
, ~
. . .
2~Q~2~7 intermetallic formation as compared to various other interConnect netallurgies.
x ., ~ TABLE II
;~ ALLOY RESISTIVITY
Q - cm) T(50%) S lhr, 400C250C,2.5E+06A/cm2 Forming Gas(Hours) Al-0.5~Cu ~Ref.~l) 3.5 9000 Al-0.5%Cu (Ref.#2) 3.4 12000 Evap (Ref. #3) 3.7 400-500 Evap (Ref. #4) 3.8 400-500 Cr/Al-4%Cu 3.0 400 Al 2.8 15 Al-0.5%Cu 2.9 50 , Al-1.2~Si-0.15%Ti 3.1 23 Al-1.2%Si (Ref.#5) 2.9 156*
. Al- 1 %Ti 6.6 2 Al-Si/Ti (Ref.#6)3.1 300*
3 * 150C, lE+06 A/cm , unpassivated 1. Sputtered 4250A Al-0.5%Cu/1500A TiA13/4250A
~` 20 Al-0.5~Cu and annealed in forming gas at 400C.
2. SputteredO700A TiA13/8500A Al-0.5%Cu/700A
TiAl /250A Al-0.5%Cu and annealed in forming gas at 4~0C.
3. Evaporated 4250A Al-0.5%Cu/1500A TiA13/4250A
;~ 25 Al-C.5~Cu and annealed in forming gas at 400C.
! O O O
~ 4. Evaporate~ 700A TiA13/8500A Al-0.5%Cu/700A
- TiAl~/250A Al-0.5%Cu and annealed in forming gas at 400C.
5. F. Fisher, Siemens Forsch-U. Entwickl-Dec. 13, 21 (1984).
~ 6. D.S. Gardner, T.L. Michalka, P.A. Flinn, T.W.
i' Barbee Jr., K.C. Saraswat & J.D. Meindl, Proc. 2nd IEEE VMIC, pp. 102-113 ~1985).
..:,.
.. ' .
. ~
:;i FI9-88-038 -11-~ .
`~:
~ ~ .
20~2~7 From the table it can be seen th~t the sputtered 0.5~ copper metallurgy provides the longest electro-migration capabilit~, with the lowest resistivity.
In general, while the corrosion resistance of bulk aluminum is greatly decreased by the addition of copper, it is known and recognized in the 2rt (see, for example, J. Zahavi, M. Rotel, H.C.W. Huang, P.A.
~ Totta, "Corrosion behavior of Al-Cu Alloy Thin Films `~ in Microelectronics." Proceeding~ of International Congress of Metallic Corrosion. Toronto, June, 1984.) that the corrosion recistance of reactive ion etched low copper containing films of aluminum (e.g., less ~¦ than 1% copper) are at least as good as bulk aluminum.
This is in contradiction to that skill in the art which recognizes that the corrosion resistance of higher percentage (above l~) copper-aluminum films significantly degrades below that of pure aluminum.
While detaile~ understanding of the mechanism of the ' performance of the subject interconnect metallurgy isnot known, several principles have been extended by the inventors to e~:plain the superior electromigration - and resistivity results as seen above.
The solubility of copper and aluminum is known to decrease from 5.65 wt.% at 548C to 0.25 wt.% at room temperature. Therefore, the 0.5~ copper film composition of the subject invention has enough copper without theta phase formation to improve both the il mechanical properties and reliability, (e.g., electro-migration properties) of the alloy over pure aluminum.
Moreover, it is recognized that there is enhanced copper uniformity in the subject films due to the fact that said films were sputtered versus the ~ non-uniformity in copper distribution as can be seen `, in the evaporated aluminum-copper films. In addition,t 35 it is also recognized that evaporation results in the~'l uneven distribution of theta particles in the .~
.
~ FI9-88-038 -12-,:~
.
~1, , ,, , ~ ~ , .. ~ ! !
"',' ,'~ . ' . ' :
: 20~247 evaporated films which uneven distribution is known to contribute to the poor mechanical corrosion and electrical properties of the prior art films. The ; superior mechanical and electrical properties of the subject metallurgy is therefore directly attributed to the enhanced copper uniformity in these films as result o~ the deposition by sputtering. Therefore, an ~ improved sputtered copper interconnect metallurgy has '~ been developed that has enhanced reliability, lower resistivity, is drv etchable, and has a superior corrosion resistance than that metallurgy as presently ,l used in the prior art. The preferred sputtered (4-layer) metallurgy exhibits lower resistivity and superior electromigration over a wider range of copper compositions than previous prior art structures.
While the invention has been particularly shown and described with reference to the preferred embodi-ments thereof, it will be understood by those skilled in the art that the foregoing and other changes in form and details may be made therein without departing from the spirit and scope of the invention.
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Description of the Preferred Embodiments FIG. l is a cross-sectional view of the preferred 3 embodiment of an interconnect metallurgy structure according to the subject invention. FIG. l represents the interconnect structure after being processed through final annealing.
Referring to FIG. l, the interconnect metallurgy is seen to comprise a four-layer structure over an '~ interplanar stud connection l0 surrounded by an ~ insulator 8 to make connection to a device substrate -~ 30 6. The four-layer structure consists of a bottom-l sputtered layer 13 of an intermetallic formed by the ;l! reaction between the conductor layer 14 and ', pre-annealed surface layer 12. The layer 13 is ~, '~ FI9-88-038 -4-,~ .
20~9247 typically 700~ thick and in a preferred embodiment would comprise TiA13. Onto said sputtered intermetallic layer 13 is a sputter-deposited, low percent (< 2) weight percent copper, aluminum-copper, conductor layer 14. After annealing , the layer 14 is typically 8,500A thick and consists of a composition of 99.5~ aluminum and 0.5~ copper (aluminum-.5% copper hereafterj. On layer 14 is a second intermetallic layer 15 of the same thickness and composition as the layer 13. A layer 18 of aluminum-.5% copper or pure aluminum of approximately 100A to 500A thick is then sputter deposited to cap the structure. While this completes the structure for a single interconnect layer according to the subject invention, it should be lS recognized by those skilled in the art that said -, layers can then be repeated in a multiple level ! sequence to complete the interconnect circuit for the devices.
Referring now to FIG. 2, FIG. 2 shows a planar ~ 20 insulator 8 and contact stud 10 ~Jith a Group IVA metal --~ layer 12 sputter deposited thereon. The layer 12 is deposited by the following process. After formation of the device contact metallization 10, the semiconductor wafer would be loaded into a sputtering tool which has been pumped to a low pressure. An in-,; situ sputter clean is then performed to remove any oxide from the contact metal 10 formation on the wafer at this time. This in-situ sputter clean typically is a mild sputter clean, run, for example, at about five minutes at low power (approximately 1,000 watt) in a ~ hiah-pressure argon ambient.
; Following the sputter cleaning, the first level of metallization 12 is then deposited. This first level metallization 12 is comprised of a Group IVA
metal, preferably titanium, deposited on the device contact metallization 10 of the wafer in a blanket formation. This layer 12 is deposited at low power in . . .
-: , , 20092~7 a high pressure, high purity, argon plasma from an ultra-pure titanium target at a rate of about 60A per minute. Preferably, the titanium is deposited to a thickness of approximately 250A.
~ 5 Referring now to FIG. 3, folloS;~ing the deposition i of the layer 12, the interconnect metallization layer ~ 14 is next blanket deposited. The interconnect 3 metallization 14 is preferably aluminum-0.5% copper , (approximately 9,500A thic~). The aluminum-copper is ;~ 10 deposited at high power using a direct current ~, magnetron in a high puritv argon plasma from an ;~ ultra-pure pre-alloyed target typically aluminum-0.5 ~teight percent copper with a deposition rate of about 1,500A per minute.
~; 15 Onto said aluminum-copper interconnect metal-lization 14 is then deposited 50A of a Group IVA
metal similar to the previously deposited metal layer 12 discussed above. Deposition, composition and thickness of said layer 16 is identical to the previously deposited layer 12 (FIG. 4).
From FIG. 5, onto said metal layer 16 is then blanket deposited a suitable capping layer 18 to complete the interconnect metallurgy at this level.
The c~pping layer 18 is preferably comprised of -~ 25 aluminum-.05% copper deposited in the same manner as the conductor aluminum-.05% copper layer 14 as discussed above. The purpose of this layer is to: 1) prevent over-etch of metal layer 16; 2) lim-t the -' amount of light reflection during the subsequent '~ 30 photoresist steps, and 3) to act as a protective layer against corrosion during subsequent processing.
;' Therefore, any layer which would similarly satisfy the requirements of reducing the amount of light reflection and provide protective anodic capping j 35 during subsequent processing would be usable for this layer (e.g. pure aluminum).
.-.
' , ~ FI9-88-038 -6-., .
., .
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2~2~7 Referring now to FIG. 6, on top of metallization 18, a multilayered photoresist (20, 22 and 24) is then applied to pattern this blanket interconnect metallization. Any number of different photoresist techniques can be used. In particular, multilayered photoresists are well suited for this purpose, as well as, single-layered resists.
, ~ith a multilayered resist as shown in FIG. 6, a ,~, first resist 20 is applied to a thicknesc of approxi-~ 10 mately 1.8 micrometers. In the preferred embodiment `~ this resist is a diazo-quinone novolak photoresist.
;~ The resist 20 is baked in an oven in a nitrogen ! ambient at about 200C for 30 minutes. This resist 20 ~ serves as a sacrificial layer during subsequent metal ,j 15 reactive ion etching (RIE).
Onto said resist 20 is then deposited 200A of a silylating agent 22, such as, HMDS
~ (hexamethyldisilizane). The HMDS 22 serves as a J barrier to the cxygen reactive ion etching which is used to pattern the imaging laver resist ~4.
Onto said HMDS layer 22 is next deposited an .~3 imaging layer resist 24 to a thickness of about '~J, O ~ 9-1 ~ 2 micrometers. Similar to resist 20, imaging~' resist- 24 is a diazo-quinone novolak positive photoresist. The HMDS 22 and imaging resist layer 24 are then baked on a hot plate for 25 minutes at 85C.
The imaging layer resist 24 is then exposed for ~i the specific time required when used in conjunction with a specific exposure tool and associated mask.
The exposed image is developed using conventional developing for the required time depending on the exposure. The wafer is then rinsed and dried and the patterned top imaging layer is UV hardened by exposing it to ultraviolet light for a specific period of time, ~;î 35 typically, 5 to 10 minutes.
Following the patterning of the top imaging resist 24, the HMDS 22 and resist layer 20 are ready ;: .
.
~ FI9-88-038 -7-. , . ~ .
... .
,............................ . . . .
2~2~7 to be removed to expose the metal. The HMDS 22 and the resist 20 are removed by reactive ion etching.
This is accomplished by loading the wafer into a plasma tool and exposing the wafer to a plasma reactive to the HMDS layer 22 (e.g. CF4) and then to a different plasma (e.g. 2) reactive to resist 20. The polymer residues of the remains o~ the HMDS layer 22 and the resist 20 are then removed by dipping in a h solution of a conventional cleaning etch solution.
This reactive ion etching of the HMDS layer 22 and the resist 20, has put a lithographic mask into place for the subsequent reactive ion etching of the underlying blanket metal layers.
The metallurgy can now be reactively ion etched in a multi-step sequence. The first step is to break through any o~:ides which may exist on the top surface of the metallization. Next, most of the metal is ~; removed by reactive ion etching. An over etch is, ,~ then, performed to insure that all of the metal in the ,'~ 20 previous step has been etched away. Finally, a passivation step is performed to prevent any metal corrosion.
~ The reactive ion etch is typically performed in a ; single ~wafer tool under a low pressure. Typical plasma composition, pressure, power and time combinations, for performing the above etches in a step-by-step process can be seen from the following ' Table I. These compositions, pressures, powers and : times should be recognized by those skilled in the art as being flesigned for a specific tool under specific conditions. Any comparable times, compositions, pressure, etc., could be similarlv fabricated to insure the etch of the blanket metallization.
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2~247 Table I
i Gas Flow (cc/min) Step 1 Step 2 Step 3 Exit BCl 20 12 12 ---, 2 11 11 8 ___ ~, CHC13 5 16 16 ---'I N2 50 50 50 ---CF4 --- ___ ___ 180 ~ 2 20 -, 10 Pressure 375 375 375 0.5 Torr (milli-Torr) Power (Watts) 485 350 350 130 ~ Typical Times 15 sec2-3 min 40 sec 20 sec ~, .
;.~
With the completion of the reactive ion etch, the wafer can then be rinsed and dried.
Referring now to FIG. 7, it can be seen that the reactive ion etch of the metal removes any of the remaining imaging layer resist 24 and most of the the HMDS layer 22 leaving on the surface of the m~tal the resist 20. This resist 20 can be removed by placing ~ the wafer in an oxygen plasma for approximately 45 ! minutes. The wafer is then placed in a developer at ~l room temperature for a short period of time to remove ; any oxides that may have formed in the previous step.
The wafer is again rinsed and dried.
~ With removal of this final layer of the resist ;l 20, the metallization stack can now be annealed by placing the wafer in an oven at 400C in forming gas for 1 hour in order to form TiA13 intermetallic layers 13 and 15 on the top and the bottom of the aluminum-copper layer 14 and to allow grain growth to occur in ;~ . .
the aluminum-copper layer 14.
From FIG. 8, it can be seen that once the metallization stack has been annealed (to the ... .
:;, ~ FI9-88-038 -9-.. . . .
.~ ,' ' ' "; :
., , , , ., : :~ ':' - ' 23~247 structure of FIG. 1) a suitable insulator 26 (e.g., planar quartz or plasma-enhanced CVD oxide or an orgallic insulator such as polyimide) can be blanket deposited over the multilayered interconnect ~' structure. This insulator 26 can then be planarized ~, s and/or patterned for stud connection to the repeating interconnect layers deposited onto the base interconnect layer.
The superior performance of the interconnect metallurgy of the subject invention over that which is ,' 10 known in the prior art can be seen in the following figures. FIG. 9 is a lifetime (hours) versus weight ~ percent copper graph for the electromigration .~ characteristics of both the above-described sputtered four-layered structure and an alternative sputtered three-layer structure (Al/Cu/refractory metal/Al-Cu), , as compared to an evaporated three-layer structure , patterned by lift-off and an evaporated four-layer I, structure, patterned by RIE. From FIG. 9 it can be ;i seen that for all weight percent copper compositions, ~, 20 the sputtered interconnect metallurgies are vastly superior to the evaporated metallurgies.
Fig. 10 is a graph of the resistivity versus weight ~ percent copper for various alternative `~ embodiment metallurgies of the subject invention. The ; 25 metallurgies have been subjected to a 400C forming gas anneal wherein the plots have been taken both before and after said anneal. From the plots it can clearly be seen that the resistivity of the 0.5 weight i percent copper structures are lower than that of the ,~ 30 higher weight percent copper films. Additionally, it can also be seen that the annealed films of the four-layer structure have a lower resistivity than the , annealed films of the three-layer structure.
-I The following Table II is a further comparison of the electromigration characteristics of sputtered ` Al-0.5%Cu metallurgy after annealing with .~
~ FI9~88-038 -10-i .... .
.
. .
, ~
. . .
2~Q~2~7 intermetallic formation as compared to various other interConnect netallurgies.
x ., ~ TABLE II
;~ ALLOY RESISTIVITY
Q - cm) T(50%) S lhr, 400C250C,2.5E+06A/cm2 Forming Gas(Hours) Al-0.5~Cu ~Ref.~l) 3.5 9000 Al-0.5%Cu (Ref.#2) 3.4 12000 Evap (Ref. #3) 3.7 400-500 Evap (Ref. #4) 3.8 400-500 Cr/Al-4%Cu 3.0 400 Al 2.8 15 Al-0.5%Cu 2.9 50 , Al-1.2~Si-0.15%Ti 3.1 23 Al-1.2%Si (Ref.#5) 2.9 156*
. Al- 1 %Ti 6.6 2 Al-Si/Ti (Ref.#6)3.1 300*
3 * 150C, lE+06 A/cm , unpassivated 1. Sputtered 4250A Al-0.5%Cu/1500A TiA13/4250A
~` 20 Al-0.5~Cu and annealed in forming gas at 400C.
2. SputteredO700A TiA13/8500A Al-0.5%Cu/700A
TiAl /250A Al-0.5%Cu and annealed in forming gas at 4~0C.
3. Evaporated 4250A Al-0.5%Cu/1500A TiA13/4250A
;~ 25 Al-C.5~Cu and annealed in forming gas at 400C.
! O O O
~ 4. Evaporate~ 700A TiA13/8500A Al-0.5%Cu/700A
- TiAl~/250A Al-0.5%Cu and annealed in forming gas at 400C.
5. F. Fisher, Siemens Forsch-U. Entwickl-Dec. 13, 21 (1984).
~ 6. D.S. Gardner, T.L. Michalka, P.A. Flinn, T.W.
i' Barbee Jr., K.C. Saraswat & J.D. Meindl, Proc. 2nd IEEE VMIC, pp. 102-113 ~1985).
..:,.
.. ' .
. ~
:;i FI9-88-038 -11-~ .
`~:
~ ~ .
20~2~7 From the table it can be seen th~t the sputtered 0.5~ copper metallurgy provides the longest electro-migration capabilit~, with the lowest resistivity.
In general, while the corrosion resistance of bulk aluminum is greatly decreased by the addition of copper, it is known and recognized in the 2rt (see, for example, J. Zahavi, M. Rotel, H.C.W. Huang, P.A.
~ Totta, "Corrosion behavior of Al-Cu Alloy Thin Films `~ in Microelectronics." Proceeding~ of International Congress of Metallic Corrosion. Toronto, June, 1984.) that the corrosion recistance of reactive ion etched low copper containing films of aluminum (e.g., less ~¦ than 1% copper) are at least as good as bulk aluminum.
This is in contradiction to that skill in the art which recognizes that the corrosion resistance of higher percentage (above l~) copper-aluminum films significantly degrades below that of pure aluminum.
While detaile~ understanding of the mechanism of the ' performance of the subject interconnect metallurgy isnot known, several principles have been extended by the inventors to e~:plain the superior electromigration - and resistivity results as seen above.
The solubility of copper and aluminum is known to decrease from 5.65 wt.% at 548C to 0.25 wt.% at room temperature. Therefore, the 0.5~ copper film composition of the subject invention has enough copper without theta phase formation to improve both the il mechanical properties and reliability, (e.g., electro-migration properties) of the alloy over pure aluminum.
Moreover, it is recognized that there is enhanced copper uniformity in the subject films due to the fact that said films were sputtered versus the ~ non-uniformity in copper distribution as can be seen `, in the evaporated aluminum-copper films. In addition,t 35 it is also recognized that evaporation results in the~'l uneven distribution of theta particles in the .~
.
~ FI9-88-038 -12-,:~
.
~1, , ,, , ~ ~ , .. ~ ! !
"',' ,'~ . ' . ' :
: 20~247 evaporated films which uneven distribution is known to contribute to the poor mechanical corrosion and electrical properties of the prior art films. The ; superior mechanical and electrical properties of the subject metallurgy is therefore directly attributed to the enhanced copper uniformity in these films as result o~ the deposition by sputtering. Therefore, an ~ improved sputtered copper interconnect metallurgy has '~ been developed that has enhanced reliability, lower resistivity, is drv etchable, and has a superior corrosion resistance than that metallurgy as presently ,l used in the prior art. The preferred sputtered (4-layer) metallurgy exhibits lower resistivity and superior electromigration over a wider range of copper compositions than previous prior art structures.
While the invention has been particularly shown and described with reference to the preferred embodi-ments thereof, it will be understood by those skilled in the art that the foregoing and other changes in form and details may be made therein without departing from the spirit and scope of the invention.
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Claims (16)
1. A metallization structure for the interconnection of semiconductor devices on a substrate compris-ing:
a) a layer of sputter deposited aluminum-copper of greater than 0.0% and less than 2.0% copper by weight; and b) an intermetallic layer formed at the surface of said aluminum-copper layer, said intermetallic formed of a sputter-deposited Group IVA metal and aluminum of said aluminum-copper layer.
a) a layer of sputter deposited aluminum-copper of greater than 0.0% and less than 2.0% copper by weight; and b) an intermetallic layer formed at the surface of said aluminum-copper layer, said intermetallic formed of a sputter-deposited Group IVA metal and aluminum of said aluminum-copper layer.
2. A metallization structure according to Claim 1 wherein said structure comprises:
a) a first intermetallic layer;
b) a layer of sputter deposited aluminum-copper containing greater than 0.0% and less than 2.0 by weight;
c) a second intermetallic layer similar to (a) above deposited on layer (b) above; and d) a metal overlayer deposited on layer (c).
a) a first intermetallic layer;
b) a layer of sputter deposited aluminum-copper containing greater than 0.0% and less than 2.0 by weight;
c) a second intermetallic layer similar to (a) above deposited on layer (b) above; and d) a metal overlayer deposited on layer (c).
3. A metallization structure according to Claim 2 wherein said metal overlayer is selected from the group comprising aluminum, aluminum-compounds or titanium-compounds.
4. A metallization structure according to Claim 2 wherein said metal overlayer is aluminum-copper alloy containing greater than 0.0% to less than 2.0% copper by weight.
5. A metallization structure according to Claim 2 wherein said intermetallic layer is approximately 700.ANG. thick.
6. A metallization structure according to Claim 2 wherein said aluminum-copper layer is approxi-mately 8,500.ANG. thick.
7. A metallization structure according to Claim 2 wherein said metal overlayer is 100.ANG. - 500.ANG.
thick.
thick.
8. A metallization structure according to Claim 2 wherein one metal of said intermetallic layer is selected from the group comprising the Group IVA
metals of the Periodic Table.
metals of the Periodic Table.
9. A metallization structure according to Claim 1 wherein said structure comprises:
a) a first layer of sputter-deposited aluminum-copper containing greater than 0.0% and less than 2.0% copper by weight;
b) an intermetallic layer deposited on layer (a) above;
c) a second layer of the metallurgy of (a) above deposited on (b).
a) a first layer of sputter-deposited aluminum-copper containing greater than 0.0% and less than 2.0% copper by weight;
b) an intermetallic layer deposited on layer (a) above;
c) a second layer of the metallurgy of (a) above deposited on (b).
10. A metllization structure according to Claim 9 wherein one metal of said intermetallic layer is selected from the group comprising the Group IVA
metals of the Periodic Table.
metals of the Periodic Table.
11. A metallization structure according to Claim 9 wherein the intermetallic layer is approximately 1500.ANG. thick.
12. A metallization structure according to Claim 11 wherein the aluminum-copper layers are approximately 4,250.ANG. thick.
13. A metallization structure according to Claim 1 wherein said structure comprises:
a) a first layer of sputter deposited aluminum-copper containing 0.5% copper by weight approximately 4,250.ANG. thick, b) a layer of TiAl3 deposited on layer (a) above and approximately 1500.ANG. thick, and c) a second layer of the metallurgy of (a) above deposited on (b).
a) a first layer of sputter deposited aluminum-copper containing 0.5% copper by weight approximately 4,250.ANG. thick, b) a layer of TiAl3 deposited on layer (a) above and approximately 1500.ANG. thick, and c) a second layer of the metallurgy of (a) above deposited on (b).
14. A metallization structure according to Claim 1 wherein said structure comprises:
a) a first layer of TiAl3 approximately 700.ANG.
thick, b) a layer of sputter deposited aluminum copper containing 0.5% copper by weight deposited onto said TiAl3 and being approximately 8,500.ANG. thick, c) a second layer of the metallurgy of (a) above deposited onto said layer onto (b) above, and d) a layer of sputter deposited aluminum copper containing 0.5% copper by weight deposited on layer (c) above and being approximately 250.ANG.
thick.
a) a first layer of TiAl3 approximately 700.ANG.
thick, b) a layer of sputter deposited aluminum copper containing 0.5% copper by weight deposited onto said TiAl3 and being approximately 8,500.ANG. thick, c) a second layer of the metallurgy of (a) above deposited onto said layer onto (b) above, and d) a layer of sputter deposited aluminum copper containing 0.5% copper by weight deposited on layer (c) above and being approximately 250.ANG.
thick.
15. A method of forming a structure for connecting semiconductor devices on a substrate comprising the steps of:
a) sputter depositing a first layer of at least one of the Group IVA metals onto said substrate, b) sputter depositing onto said layer of the Group IVA metals a layer of aluminum copper of greater than 0.0% and less than 2.0% copper by weight, c) sputter depositing a second layer of the same Group IVA metal as in step a, and d) annealing the structure to form an intermetallic of the Group IVA metals and aluminum.
a) sputter depositing a first layer of at least one of the Group IVA metals onto said substrate, b) sputter depositing onto said layer of the Group IVA metals a layer of aluminum copper of greater than 0.0% and less than 2.0% copper by weight, c) sputter depositing a second layer of the same Group IVA metal as in step a, and d) annealing the structure to form an intermetallic of the Group IVA metals and aluminum.
16. A method according to Claim 15 wherein said annealed interconnect structure is patterned to connect the devices.
Applications Claiming Priority (3)
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US339,533 | 1989-04-17 | ||
US36567189A | 1989-06-13 | 1989-06-13 | |
US07/365,671 | 1989-06-13 |
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US5549428A (en) * | 1991-08-06 | 1996-08-27 | Yeatts; Ben R. | Truck bed liner anti-skid device |
US5419603A (en) * | 1993-08-16 | 1995-05-30 | Futurex Industries, Inc. | Cargo bed liner tie-down fastener enclosure |
US5673956A (en) * | 1993-10-06 | 1997-10-07 | Penda Corporation | Bedliner with floor hole engagement |
US5934730A (en) * | 1994-07-01 | 1999-08-10 | Nissan Motor Co., Ltd | Energy absorbing door panel |
US6007282A (en) * | 1994-10-11 | 1999-12-28 | Mundt; John H. | Cargo-restraining device |
US5655863A (en) * | 1994-10-11 | 1997-08-12 | Mundt; John H. | Cargo-restraining device |
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US5599055A (en) * | 1995-10-23 | 1997-02-04 | Brown; James F. | Insert for a pickup truck bed |
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-
1989
- 1989-08-24 JP JP1216169A patent/JPH0325150A/en active Pending
-
1990
- 1990-02-05 CA CA002009247A patent/CA2009247C/en not_active Expired - Lifetime
-
1991
- 1991-07-08 US US07/728,767 patent/US5131709A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5131709A (en) | 1992-07-21 |
CA2009347A1 (en) | 1990-12-13 |
JPH0325150A (en) | 1991-02-01 |
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