CA1302158C - Thin film device for an ink jet printhead and process for manufacturing same - Google Patents
Thin film device for an ink jet printhead and process for manufacturing sameInfo
- Publication number
- CA1302158C CA1302158C CA000572043A CA572043A CA1302158C CA 1302158 C CA1302158 C CA 1302158C CA 000572043 A CA000572043 A CA 000572043A CA 572043 A CA572043 A CA 572043A CA 1302158 C CA1302158 C CA 1302158C
- Authority
- CA
- Canada
- Prior art keywords
- layer
- resistive
- conductive
- heater element
- define
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14088—Structure of heating means
- B41J2/14112—Resistive element
- B41J2/14129—Layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/148—Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49083—Heater type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49099—Coating resistive material on a base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
Abstract
Abstract A process for manufacturing a thin film resistor substrate useful, for example, in fabricating an ink jet printhead, wherein discontinuous strips of conductive material are initially patterned on the surface of a resistive layer. These strips are formed using a first series of masking and etching steps to define an "X"
dimension of a resistive heater element. Then, the conductive strips and resistive material therebetween are completely masked in preparation for a subsequent, second etching step used to remove the exposed portions of the resistive layer and thereby define a "Y"
dimension of the resistive heater element. These steps leave smooth contours, good step coverage and high quality bevelled edges of the thus defined conductive and resistive layers. These layers are now ready for subsequent passivation layer, barrier layer and orifice plate deposition processes to complete a thin film printhead for use in an ink jet printer.
dimension of a resistive heater element. Then, the conductive strips and resistive material therebetween are completely masked in preparation for a subsequent, second etching step used to remove the exposed portions of the resistive layer and thereby define a "Y"
dimension of the resistive heater element. These steps leave smooth contours, good step coverage and high quality bevelled edges of the thus defined conductive and resistive layers. These layers are now ready for subsequent passivation layer, barrier layer and orifice plate deposition processes to complete a thin film printhead for use in an ink jet printer.
Description
- 13~Z~
THIN FILM DEVICE FOR AN INK JET PRINTHEAD
AND PROCESS FOR MANUFACTURING SAME
Technical Field This invention relates generally to the fabrication of printheads for ink jet printers and more particularly to a new and improved thin film type printhead and related manufacturing process for a thermal ink jet (TIJ) printer.
Background Art In the manufacture and use of thin film resistor (TFR) type printheads for use in thermal ink jet printers, it is well known to employ resistive heater elements to heat ink to boiling and thus propel the ink through an overlying orifice plate during an ink jet printing operation. The resistive heater material is typically disposed on an insulating substrate, and the individual heater elements therein are dimensionally defined by conductive trace patterns which are photolithographically formed using conventional photolithographic masking, ultraviolet exposure and etching techniques well known in the art. This thin film printhead substructure is affixed to an intermediate barrier layer and outer orifice plate, and typically the internal geometry of the barrier layer will define a plurality of ink reservoirs which are situated above and aligned with a corresponding plurality of heater resistors. For a further 13~)Z~
discussion of these types of thin film printhead structures, reference may be made to the Hewlett-Packard Journal, Vol. 38, No. 5, May 1985 One conventional prior art process for defining the X-Y dimensions of these heater resistors involves first depositing successive layers of resistive and conductive material on an insulating substrate and then using a single photoresist mask to first define only the width of the conductive strips in the outer conductive pattern. This photoresist mask also serves as an etch mask for the underlying resistive layer and defines a first dimension of a resistive heater element. After etching exposed areas of the resistive area and leaving a strip of resistive material intact beneath an outer strip of conductive material, another set of masking and etching steps is used to form openings in the conductive strips to thereby establish a second dimension of the resistive heater element.
Since the first two etches in the above process use the same photoresist mask, pattern degradation occurring during the first etch step undesirably affects the quality of the second etch. Additionally, the etchant used for the bottom layer (resistive layer) attacks the freshly exposed edges of the top layer (conductor layer), giving rise to a variety of defect possibilities. The second masking and etching step which defines the second dimension of the resistive .
13~Z~
heater element as described above also suffers from a condition caused by etching the conductor layer which has undergone surface modifications. These modifications are caused by exposure to the chemicals involved in the first masking and etching step, including trace quantities of the organic residues from the photoresist material. This latter fact manifests itself in an irregular bevel quality at the resistor/conductor interface.
SUMMARY OF THE INVENTION
Various aspects of the invention are as follows:
A process for fabricating a thin film resistor device which comprises the steps of:
a. forming a layer of resistive material on top of a selected substrate, b. forming a layer of conductive material on top of said resistive layer, c. defining a pattern in said conductive layer including discontinuous strips of conductor which extend to each side of and define a first dimension of a resistive heater element, d. completely covering said conductive strips with a mask to leave exposed only a predetermined area of said resistive layer removed from said conductive strips, and e. removing said predetermined area of said resistive layer to thereby define a second dimension of said resistive heater element; whereby said resistive heater element is protected during the etching step used to define its second dimension.
~ 13~2~B
-4a-An ink jet printhead for an ink jet printer and having a thin film resistor substructure for receiving in succession a barrier layer and orifice plate for ejecting ink onto a pEint medium, characterized in that said thin film resistor substructure is fabricated by the process of:
a. forming a layer of resistive material on top of a selected substrate, b. forming a layer of conductive material on top of said resistive layer, c. defining a pattern in said conductive layer including discontinuous strips of conductor which extend to each side of and define a first dimension of a resistive heater element, d. completely covering said conductive strips with a mask to leave exposed only a predetermined area of said resistive layer removed from said conductive strips, and then e. removing said predetermined area of said resistive layer to thereby define a second dimension of said resistive heater element.
13t~Z158 Disclosure of Invention The general purpose of this invention is to provide a new and improved manufacturing process for fabricating thin film ink jet printheads which S eliminates the above described disadvantages of conventional prior art processing while simultaneously increasing process yields, reducing process costs, improving printhead to printhead identity of device characteristics and performance, and increasing printhead lifetime.
To accomplish this purpose, we have discovered and developed a new and improved ink jet printhead and manufacturing process therefor which includes forming a layer of resistive material on top of a selected substrate and then forming a layer of conductive material on top of the resistive layer. Then, a conductive trace pattern is completely formed in the : conductive layer and includes discontinuous strips of 13~21~
conductive material which extend to each side of and define a first dimension of a resistive heater element.
Then, these conductive strips of the conductive trace pattern are completely covered with a mask to thereby leave exposed a predetermined area of the hitherto undefined resistive material. Then, the exposed area of the resistive layer is removed, such as by etching, to thus define a second dimension of the resistive heater element and thereby leave extremely well defined and smoothly contoured side walls and edges of both the resistive material and the conductive material.
Thus, among the many advantages of this invention includes the provision of smooth, well controlled conductor edge profiles exhibiting good bevel quality which is important in thermal ink jet processing. These edge profiles provide for enhanced passivation step coverage over conductor edges, and such passivation step coverage is crucial for thermal ink jet reliability due to the substantial thermal, mechanical and chemical stresses to which these devices are subjected during a thermal ink jet printing operation. It is well documented that a smooth transition between the conductor material and the resistor material is imperative to long pen life.
In the present two-step process, the trace conductors are defined and bevels are generated in a single etch step at the first mask level. In this step only one metallic layer is affected. Since the 13~
conductor is newly formed, etching it produces uniform and smooth bevels as will be more fully described, and this feature eliminates localized edge pitting, lateral edge waviness and etch damaged photoresist residues.
Using the present process, critical conductor dimensions are more readily controllable due to the fact that only one etchant affects the conductor dimensions.
The second mask and etch step only etches the resistor layer, and in contrast to the conventional prior art 10 process, the resistor layer has no edges that lie beneath metal strips. This feature eliminates the common edge problems as described above.
The enhanced process described herein allows the creation of two distinct edge steps and thereby 15 eliminates the possibility of conductor edges overhanging the edges of the resistor layer.
Additionally, this process eliminates the constraints on selectivity of the resistor layer etchant, since this etchant can be modified and optimized independently 20 without concern about selectivity to the conductor layer material.
Using the present process, critical resistor J dimensions are more readily controllable due to the fact that only one etchant affects the resistor width, and 25 this process eliminates one etch step and the associated quench, rinse, dry and inspection steps associated therewith. In addition, the present process reduces the likelihood of process related corrosion, since the 13~ZlS8 resistor layer etchant is not allowed to inoculate the conductor surface with acid related residues. This latter action occurs with conventional prior art processing because the resistor layer etchant can penetrate through cracks formed in the photoresist mask during the previous conductor layer etch step. Thus, the overall quality and uniformity of the thin film resistor/conductor array patterning is greatly enhanced using the present inventive process.
Brief Description of the Drawings Figure 1 is an isometric view of one type of thin film substructure upon which the present pr~cess may be carried out.
Figures 2A through 2D illustrate, in four plan views, the formation of the pattern geometries for the conductive trace material and the resistive material, respectively.
Figure 3 is a plan view replication of a photograph taken of the resistor and conductor step region of the central region of Figure 2D after the resistive strips had been defined.
Figure 4A is a cross section view taken along lines 4A- 4A of Figure 2D.
Figure 4B is a cross section view showing the addition of barrier layer material and an outer orifice plate to the substructure of Figure 4A.
13~?2:~8 Detailed Description of the Drawings Referring now to Figure 1, the thin film resistor substructure shown therein is designated generally as 10 and includes an underlying substrate 12 which will typically be glass or silicon. The substrate 12 has a layer 14, such as silicon dioxide, sio2, thereon, and this surface insulating layer 14 is utilized to provide a dielectric barrier and heat sink between the substrate 12 and an overlying resistive layer 16 which may, for example, be a tantalum aluminum alloy, TaAl. The resistive layer 16 is in turn covered by a top conductive layer 18 which may, for example, be aluminum, Al. However, the conductive layer 18 and the resistive layer 16 may both be of many materials other than the exemplary materials given above. Similarly, it is not necessary that the surface insulation layer 14 be used at all, and instead the resistive layer may be deposited directly on certain types of substrate materials with dielectric and heat transfer characteristics suitable for directly receiving the desired resistive material.
one such suitable substrate material is baria glass.
The top conductive surface layer 18 as indicated in Figure 2A is appropriately masked with strips of photoresist (not shown) using conventional photolithographic processing techniques and then exposed to a metal etchant (such as H3P04:HNO3:CH3COOH:H20 in the ratios of 16:14:1:2, respectively) to remove all unprotected regions of the aluminum conductive layer 18.
13V21~13 This step leaves intact a plurality of conductive traces 20 and 22 which define the resistor length dimension "X" as shown in Figure 2B. In this figure there are shown only two conductive traces 20 and 22, but it will be understood and appreciated by those skilled in the art that a thin film resistor type of printhead structure of the type used in TIJ printers, for example, will include a large plurality of these traces. These traces ultimately serve to define and supply current to a corresponding plurality of heater resistors 24 in the central area indicated in Figure 2B.
The structure in Figure 2~ is transferred to a photoresist masking station where a second photoresist mask 26 as indicated in Figure 2C is formed to completely cover the upper surfaces of the conductive traces 20 and 22. After this masking step is completed, the structure in Figure 2C is then immersed in another selected etchant for removing the exposed unprotected resistive layer in the upper and lower regions 28 and 30 as indicated in Figure 2C. Then the photoresist mask 26 in Figure 2C is removed using a suitable resist removal solvent to thereby leave intact the resistive material 34 in Figure 2D and having the central contoured boundaries 36 and 38 which define a second or width dimension "Y" of the heater resistor 24. Thus, the continuous strip of resistive heater material 34 underlies the conductive traces 20 and 22 and has a larger width dimension than that of these traces.
Referring now to Figure 3, the smooth contours and improved bevelled geometry 39 and 40 of the two-step resistor/conductor structure are shown in a plan view replication of a photograph taken of the horizontal resistor and conductor strips in Figure 2D. The bevelled edges 39 and 40 have a slope of about twenty (20) degrees with respect to the horizontal and a very smooth surface as a result of undergoing only a single etch step in the above described process.
Referring now to Figure 4A, this figure is a cross section view taken along lines 4A-4A of Figure 2D
and shows the smooth low angle edges 39 and 40 of the aluminum trace patterns previously described and defining a resistive heater element 41. The structure in Figure 4A will normally be transferred to an inert passivation deposition station wherein typically an initial thin layer of silicon nitride, Si3N4, is deposited on the surface of the aluminum trace material and exposed heater resistor. Thereafter, an outer protective layer of highly inert silicon carbide, SiC, is deposited on the surface of the Si3N4 to complete the composite inner surface passivation layer 42 as indicated in Figure 4B. Then, a much thicker outer barrier layer 44 is formed on the surface of the surface passivation layer 42, and the outer baxrier layer 44 may be either a polymer material such as the well known polymers RISTON and VACRE~ available from the DuPont Company of Wilmington, Delaware. Alternatively, the 13V2~
barrier layer 44 may be electroformed of nickel in the manner described in the above identified Hewlett-Packard Journal.
The thicker or outer barrier layer 44 may be defined either photolithographically using known polymer materials such as those described above, or it may be formed with known electroforming and photoresist and masking techniques using metals such as nickel and configured to include an ink reservoir region indicated as 46 in Figure 4B. Such electroforming techniques are disclosed, for example, in U. S. Patent 4,694,308 issued to C. S. Chan et al and assigned to the present assignee.
The ink reservoir region 46 is normally aligned with the previously formed resistive heater elements 41.
The outer barrier layer 44 is in turn secured using a suitable adhesive (or using the outer barrier layer 44 as its own adjesive) to an outer orifice or nozzle plate 48 with orifices defined using known orifice forming techniques such as those described in U.S. Patent 4,694,308. These orifices will typically be defined by a plurality of convergent outer surfaces 50 which terminate at a corresponding plurality of output ink ejection orifice openings 52. The orifice plate 48 may be electroformed of nickel or it may be formed of other materials, such as plastics or other photodefinable polymers. Thus, it will be understood that the present invention is not limited by the particular materials and :13021~8 geometries of the outer barrier layer 44 and orifice plate 48 materials for the components 44 and 48 of the above described printhead.
The following table of values is given by way of example only for one printhead of the type described herein which has been actually built and successfully tested.
TABLE
. _ LAYER I THICKNESS ¦ APPROXIMATE ¦ DEPOSITION
¦ I (micrors) ¦RESISTIVITY ¦ PROCESS
Si Uafer ¦ 525 138 ohm.cm I Std. substrate 14 l l I Thermal Si02 ¦ 1.7 1U.A. I Oxidation ¦ 16 1 1 300 I TaA1 ¦ 0.1 ¦micro-ohm-cm ¦ Sputtering A1 1 0.5 Imicro-ohm-cm I Sputtering Passivation I Si3N4 ¦ 0.5 IN.A. I PECVD
Passivation SiC ¦ 0.25 ¦N.A. ¦ PECVD
. _ Barrier ~Vacrel) I 25 IN.A. I Lamiration Orifice Plate Au plated ~i I 48 I N.A. I Electroplating I
* Plasma Enhanced Chemical Vapor Deposition ** Tradename of polymer barrier material made by the DuPont Co.
THIN FILM DEVICE FOR AN INK JET PRINTHEAD
AND PROCESS FOR MANUFACTURING SAME
Technical Field This invention relates generally to the fabrication of printheads for ink jet printers and more particularly to a new and improved thin film type printhead and related manufacturing process for a thermal ink jet (TIJ) printer.
Background Art In the manufacture and use of thin film resistor (TFR) type printheads for use in thermal ink jet printers, it is well known to employ resistive heater elements to heat ink to boiling and thus propel the ink through an overlying orifice plate during an ink jet printing operation. The resistive heater material is typically disposed on an insulating substrate, and the individual heater elements therein are dimensionally defined by conductive trace patterns which are photolithographically formed using conventional photolithographic masking, ultraviolet exposure and etching techniques well known in the art. This thin film printhead substructure is affixed to an intermediate barrier layer and outer orifice plate, and typically the internal geometry of the barrier layer will define a plurality of ink reservoirs which are situated above and aligned with a corresponding plurality of heater resistors. For a further 13~)Z~
discussion of these types of thin film printhead structures, reference may be made to the Hewlett-Packard Journal, Vol. 38, No. 5, May 1985 One conventional prior art process for defining the X-Y dimensions of these heater resistors involves first depositing successive layers of resistive and conductive material on an insulating substrate and then using a single photoresist mask to first define only the width of the conductive strips in the outer conductive pattern. This photoresist mask also serves as an etch mask for the underlying resistive layer and defines a first dimension of a resistive heater element. After etching exposed areas of the resistive area and leaving a strip of resistive material intact beneath an outer strip of conductive material, another set of masking and etching steps is used to form openings in the conductive strips to thereby establish a second dimension of the resistive heater element.
Since the first two etches in the above process use the same photoresist mask, pattern degradation occurring during the first etch step undesirably affects the quality of the second etch. Additionally, the etchant used for the bottom layer (resistive layer) attacks the freshly exposed edges of the top layer (conductor layer), giving rise to a variety of defect possibilities. The second masking and etching step which defines the second dimension of the resistive .
13~Z~
heater element as described above also suffers from a condition caused by etching the conductor layer which has undergone surface modifications. These modifications are caused by exposure to the chemicals involved in the first masking and etching step, including trace quantities of the organic residues from the photoresist material. This latter fact manifests itself in an irregular bevel quality at the resistor/conductor interface.
SUMMARY OF THE INVENTION
Various aspects of the invention are as follows:
A process for fabricating a thin film resistor device which comprises the steps of:
a. forming a layer of resistive material on top of a selected substrate, b. forming a layer of conductive material on top of said resistive layer, c. defining a pattern in said conductive layer including discontinuous strips of conductor which extend to each side of and define a first dimension of a resistive heater element, d. completely covering said conductive strips with a mask to leave exposed only a predetermined area of said resistive layer removed from said conductive strips, and e. removing said predetermined area of said resistive layer to thereby define a second dimension of said resistive heater element; whereby said resistive heater element is protected during the etching step used to define its second dimension.
~ 13~2~B
-4a-An ink jet printhead for an ink jet printer and having a thin film resistor substructure for receiving in succession a barrier layer and orifice plate for ejecting ink onto a pEint medium, characterized in that said thin film resistor substructure is fabricated by the process of:
a. forming a layer of resistive material on top of a selected substrate, b. forming a layer of conductive material on top of said resistive layer, c. defining a pattern in said conductive layer including discontinuous strips of conductor which extend to each side of and define a first dimension of a resistive heater element, d. completely covering said conductive strips with a mask to leave exposed only a predetermined area of said resistive layer removed from said conductive strips, and then e. removing said predetermined area of said resistive layer to thereby define a second dimension of said resistive heater element.
13t~Z158 Disclosure of Invention The general purpose of this invention is to provide a new and improved manufacturing process for fabricating thin film ink jet printheads which S eliminates the above described disadvantages of conventional prior art processing while simultaneously increasing process yields, reducing process costs, improving printhead to printhead identity of device characteristics and performance, and increasing printhead lifetime.
To accomplish this purpose, we have discovered and developed a new and improved ink jet printhead and manufacturing process therefor which includes forming a layer of resistive material on top of a selected substrate and then forming a layer of conductive material on top of the resistive layer. Then, a conductive trace pattern is completely formed in the : conductive layer and includes discontinuous strips of 13~21~
conductive material which extend to each side of and define a first dimension of a resistive heater element.
Then, these conductive strips of the conductive trace pattern are completely covered with a mask to thereby leave exposed a predetermined area of the hitherto undefined resistive material. Then, the exposed area of the resistive layer is removed, such as by etching, to thus define a second dimension of the resistive heater element and thereby leave extremely well defined and smoothly contoured side walls and edges of both the resistive material and the conductive material.
Thus, among the many advantages of this invention includes the provision of smooth, well controlled conductor edge profiles exhibiting good bevel quality which is important in thermal ink jet processing. These edge profiles provide for enhanced passivation step coverage over conductor edges, and such passivation step coverage is crucial for thermal ink jet reliability due to the substantial thermal, mechanical and chemical stresses to which these devices are subjected during a thermal ink jet printing operation. It is well documented that a smooth transition between the conductor material and the resistor material is imperative to long pen life.
In the present two-step process, the trace conductors are defined and bevels are generated in a single etch step at the first mask level. In this step only one metallic layer is affected. Since the 13~
conductor is newly formed, etching it produces uniform and smooth bevels as will be more fully described, and this feature eliminates localized edge pitting, lateral edge waviness and etch damaged photoresist residues.
Using the present process, critical conductor dimensions are more readily controllable due to the fact that only one etchant affects the conductor dimensions.
The second mask and etch step only etches the resistor layer, and in contrast to the conventional prior art 10 process, the resistor layer has no edges that lie beneath metal strips. This feature eliminates the common edge problems as described above.
The enhanced process described herein allows the creation of two distinct edge steps and thereby 15 eliminates the possibility of conductor edges overhanging the edges of the resistor layer.
Additionally, this process eliminates the constraints on selectivity of the resistor layer etchant, since this etchant can be modified and optimized independently 20 without concern about selectivity to the conductor layer material.
Using the present process, critical resistor J dimensions are more readily controllable due to the fact that only one etchant affects the resistor width, and 25 this process eliminates one etch step and the associated quench, rinse, dry and inspection steps associated therewith. In addition, the present process reduces the likelihood of process related corrosion, since the 13~ZlS8 resistor layer etchant is not allowed to inoculate the conductor surface with acid related residues. This latter action occurs with conventional prior art processing because the resistor layer etchant can penetrate through cracks formed in the photoresist mask during the previous conductor layer etch step. Thus, the overall quality and uniformity of the thin film resistor/conductor array patterning is greatly enhanced using the present inventive process.
Brief Description of the Drawings Figure 1 is an isometric view of one type of thin film substructure upon which the present pr~cess may be carried out.
Figures 2A through 2D illustrate, in four plan views, the formation of the pattern geometries for the conductive trace material and the resistive material, respectively.
Figure 3 is a plan view replication of a photograph taken of the resistor and conductor step region of the central region of Figure 2D after the resistive strips had been defined.
Figure 4A is a cross section view taken along lines 4A- 4A of Figure 2D.
Figure 4B is a cross section view showing the addition of barrier layer material and an outer orifice plate to the substructure of Figure 4A.
13~?2:~8 Detailed Description of the Drawings Referring now to Figure 1, the thin film resistor substructure shown therein is designated generally as 10 and includes an underlying substrate 12 which will typically be glass or silicon. The substrate 12 has a layer 14, such as silicon dioxide, sio2, thereon, and this surface insulating layer 14 is utilized to provide a dielectric barrier and heat sink between the substrate 12 and an overlying resistive layer 16 which may, for example, be a tantalum aluminum alloy, TaAl. The resistive layer 16 is in turn covered by a top conductive layer 18 which may, for example, be aluminum, Al. However, the conductive layer 18 and the resistive layer 16 may both be of many materials other than the exemplary materials given above. Similarly, it is not necessary that the surface insulation layer 14 be used at all, and instead the resistive layer may be deposited directly on certain types of substrate materials with dielectric and heat transfer characteristics suitable for directly receiving the desired resistive material.
one such suitable substrate material is baria glass.
The top conductive surface layer 18 as indicated in Figure 2A is appropriately masked with strips of photoresist (not shown) using conventional photolithographic processing techniques and then exposed to a metal etchant (such as H3P04:HNO3:CH3COOH:H20 in the ratios of 16:14:1:2, respectively) to remove all unprotected regions of the aluminum conductive layer 18.
13V21~13 This step leaves intact a plurality of conductive traces 20 and 22 which define the resistor length dimension "X" as shown in Figure 2B. In this figure there are shown only two conductive traces 20 and 22, but it will be understood and appreciated by those skilled in the art that a thin film resistor type of printhead structure of the type used in TIJ printers, for example, will include a large plurality of these traces. These traces ultimately serve to define and supply current to a corresponding plurality of heater resistors 24 in the central area indicated in Figure 2B.
The structure in Figure 2~ is transferred to a photoresist masking station where a second photoresist mask 26 as indicated in Figure 2C is formed to completely cover the upper surfaces of the conductive traces 20 and 22. After this masking step is completed, the structure in Figure 2C is then immersed in another selected etchant for removing the exposed unprotected resistive layer in the upper and lower regions 28 and 30 as indicated in Figure 2C. Then the photoresist mask 26 in Figure 2C is removed using a suitable resist removal solvent to thereby leave intact the resistive material 34 in Figure 2D and having the central contoured boundaries 36 and 38 which define a second or width dimension "Y" of the heater resistor 24. Thus, the continuous strip of resistive heater material 34 underlies the conductive traces 20 and 22 and has a larger width dimension than that of these traces.
Referring now to Figure 3, the smooth contours and improved bevelled geometry 39 and 40 of the two-step resistor/conductor structure are shown in a plan view replication of a photograph taken of the horizontal resistor and conductor strips in Figure 2D. The bevelled edges 39 and 40 have a slope of about twenty (20) degrees with respect to the horizontal and a very smooth surface as a result of undergoing only a single etch step in the above described process.
Referring now to Figure 4A, this figure is a cross section view taken along lines 4A-4A of Figure 2D
and shows the smooth low angle edges 39 and 40 of the aluminum trace patterns previously described and defining a resistive heater element 41. The structure in Figure 4A will normally be transferred to an inert passivation deposition station wherein typically an initial thin layer of silicon nitride, Si3N4, is deposited on the surface of the aluminum trace material and exposed heater resistor. Thereafter, an outer protective layer of highly inert silicon carbide, SiC, is deposited on the surface of the Si3N4 to complete the composite inner surface passivation layer 42 as indicated in Figure 4B. Then, a much thicker outer barrier layer 44 is formed on the surface of the surface passivation layer 42, and the outer baxrier layer 44 may be either a polymer material such as the well known polymers RISTON and VACRE~ available from the DuPont Company of Wilmington, Delaware. Alternatively, the 13V2~
barrier layer 44 may be electroformed of nickel in the manner described in the above identified Hewlett-Packard Journal.
The thicker or outer barrier layer 44 may be defined either photolithographically using known polymer materials such as those described above, or it may be formed with known electroforming and photoresist and masking techniques using metals such as nickel and configured to include an ink reservoir region indicated as 46 in Figure 4B. Such electroforming techniques are disclosed, for example, in U. S. Patent 4,694,308 issued to C. S. Chan et al and assigned to the present assignee.
The ink reservoir region 46 is normally aligned with the previously formed resistive heater elements 41.
The outer barrier layer 44 is in turn secured using a suitable adhesive (or using the outer barrier layer 44 as its own adjesive) to an outer orifice or nozzle plate 48 with orifices defined using known orifice forming techniques such as those described in U.S. Patent 4,694,308. These orifices will typically be defined by a plurality of convergent outer surfaces 50 which terminate at a corresponding plurality of output ink ejection orifice openings 52. The orifice plate 48 may be electroformed of nickel or it may be formed of other materials, such as plastics or other photodefinable polymers. Thus, it will be understood that the present invention is not limited by the particular materials and :13021~8 geometries of the outer barrier layer 44 and orifice plate 48 materials for the components 44 and 48 of the above described printhead.
The following table of values is given by way of example only for one printhead of the type described herein which has been actually built and successfully tested.
TABLE
. _ LAYER I THICKNESS ¦ APPROXIMATE ¦ DEPOSITION
¦ I (micrors) ¦RESISTIVITY ¦ PROCESS
Si Uafer ¦ 525 138 ohm.cm I Std. substrate 14 l l I Thermal Si02 ¦ 1.7 1U.A. I Oxidation ¦ 16 1 1 300 I TaA1 ¦ 0.1 ¦micro-ohm-cm ¦ Sputtering A1 1 0.5 Imicro-ohm-cm I Sputtering Passivation I Si3N4 ¦ 0.5 IN.A. I PECVD
Passivation SiC ¦ 0.25 ¦N.A. ¦ PECVD
. _ Barrier ~Vacrel) I 25 IN.A. I Lamiration Orifice Plate Au plated ~i I 48 I N.A. I Electroplating I
* Plasma Enhanced Chemical Vapor Deposition ** Tradename of polymer barrier material made by the DuPont Co.
Claims (3)
1. A process for fabricating a thin film resistor device which comprises the steps of:
a. forming a layer of resistive material on top of a selected substrate, b. forming a layer of conductive material on top of said resistive layer, c. defining a pattern in said conductive layer including discontinuous strips of conductor which extend to each side of and define a first dimension of a resistive heater element, d. completely covering said conductive strips with a mask to leave exposed only a predetermined area of said resistive layer removed from said conductive strips, and e. removing said predetermined area of said resistive layer to thereby define a second dimension of said resistive heater element; whereby said resistive heater element is protected during the etching step used to define its second dimension.
a. forming a layer of resistive material on top of a selected substrate, b. forming a layer of conductive material on top of said resistive layer, c. defining a pattern in said conductive layer including discontinuous strips of conductor which extend to each side of and define a first dimension of a resistive heater element, d. completely covering said conductive strips with a mask to leave exposed only a predetermined area of said resistive layer removed from said conductive strips, and e. removing said predetermined area of said resistive layer to thereby define a second dimension of said resistive heater element; whereby said resistive heater element is protected during the etching step used to define its second dimension.
2. The process defined in claim 1 wherein an ink jet printhead is formed by first depositing a barrier layer on said device to define an ink reservoir over said resistive heater element, and then depositing an orifice plate on said barrier layer to position an orifice opening over said ink reservoir and said resistive heater element.
3. An ink jet printhead for an ink jet printer and having a thin film resistor substructure for receiving in succession a barrier layer and orifice plate for ejecting ink onto a print medium, characterized in that said thin film resistor substructure is fabricated by the process of:
a. forming a layer of resistive material on top of a selected substrate, b. forming a layer of conductive material on top of said resistive layer, c. defining a pattern in said conductive layer including discontinuous strips of conductor which extend to each side of and define a first dimension of a resistive heater element, d. completely covering said conductive strips with a mask to leave exposed only a predetermined area of said resistive layer removed from said conductive strips, and then e. removing said predetermined area of said resistive layer to thereby define a second dimension of said resistive heater element.
a. forming a layer of resistive material on top of a selected substrate, b. forming a layer of conductive material on top of said resistive layer, c. defining a pattern in said conductive layer including discontinuous strips of conductor which extend to each side of and define a first dimension of a resistive heater element, d. completely covering said conductive strips with a mask to leave exposed only a predetermined area of said resistive layer removed from said conductive strips, and then e. removing said predetermined area of said resistive layer to thereby define a second dimension of said resistive heater element.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US131,620 | 1987-12-10 | ||
| US07/131,620 US4809428A (en) | 1987-12-10 | 1987-12-10 | Thin film device for an ink jet printhead and process for the manufacturing same |
| SG141194A SG141194G (en) | 1987-12-10 | 1994-09-30 | Thin film device for an ink jet printhead and process for manufacturing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1302158C true CA1302158C (en) | 1992-06-02 |
Family
ID=26664394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000572043A Expired - Lifetime CA1302158C (en) | 1987-12-10 | 1988-07-14 | Thin film device for an ink jet printhead and process for manufacturing same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4809428A (en) |
| EP (1) | EP0320192B1 (en) |
| JP (1) | JP2783566B2 (en) |
| CA (1) | CA1302158C (en) |
| DE (1) | DE3885420T2 (en) |
| HK (1) | HK136694A (en) |
| SG (1) | SG141194G (en) |
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| US5194877A (en) * | 1991-05-24 | 1993-03-16 | Hewlett-Packard Company | Process for manufacturing thermal ink jet printheads having metal substrates and printheads manufactured thereby |
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| US5464714A (en) * | 1993-03-05 | 1995-11-07 | Canon Kabushiki Kaisha | Process for producing color filter plate and color filter plate thus produced |
| US5350616A (en) * | 1993-06-16 | 1994-09-27 | Hewlett-Packard Company | Composite orifice plate for ink jet printer and method for the manufacture thereof |
| US5598189A (en) * | 1993-09-07 | 1997-01-28 | Hewlett-Packard Company | Bipolar integrated ink jet printhead driver |
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| US6758552B1 (en) | 1995-12-06 | 2004-07-06 | Hewlett-Packard Development Company | Integrated thin-film drive head for thermal ink-jet printer |
| US5883650A (en) * | 1995-12-06 | 1999-03-16 | Hewlett-Packard Company | Thin-film printhead device for an ink-jet printer |
| US6239820B1 (en) | 1995-12-06 | 2001-05-29 | Hewlett-Packard Company | Thin-film printhead device for an ink-jet printer |
| KR100205746B1 (en) * | 1996-06-12 | 1999-07-01 | 윤종용 | Ejection apparatus and ejection method of inkjet printer |
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| RU2146621C1 (en) | 1998-11-03 | 2000-03-20 | Самсунг Электроникс Ко., Лтд | Microinjector |
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| RU2144471C1 (en) | 1998-11-03 | 2000-01-20 | Самсунг Электроникс Ко., Лтд. | Method and device for assembling of microinjector |
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| US6139131A (en) * | 1999-08-30 | 2000-10-31 | Hewlett-Packard Company | High drop generator density printhead |
| US6582062B1 (en) | 1999-10-18 | 2003-06-24 | Hewlett-Packard Development Company, L.P. | Large thermal ink jet nozzle array printhead |
| TW448108B (en) * | 1999-12-10 | 2001-08-01 | Wisertek Internat Corp | Ink jet head and its manufacturing method |
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| US7837886B2 (en) | 2007-07-26 | 2010-11-23 | Hewlett-Packard Development Company, L.P. | Heating element |
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| JPS57138961A (en) * | 1981-02-23 | 1982-08-27 | Fujitsu Ltd | Crossover formation for thermal head |
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| JPS6154954A (en) * | 1984-08-28 | 1986-03-19 | Alps Electric Co Ltd | Thermal head and manufacture thereof |
| US4695853A (en) * | 1986-12-12 | 1987-09-22 | Hewlett-Packard Company | Thin film vertical resistor devices for a thermal ink jet printhead and methods of manufacture |
-
1987
- 1987-12-10 US US07/131,620 patent/US4809428A/en not_active Expired - Lifetime
-
1988
- 1988-07-14 CA CA000572043A patent/CA1302158C/en not_active Expired - Lifetime
- 1988-12-05 EP EP88311513A patent/EP0320192B1/en not_active Expired - Lifetime
- 1988-12-05 DE DE88311513T patent/DE3885420T2/en not_active Expired - Fee Related
- 1988-12-08 JP JP63310991A patent/JP2783566B2/en not_active Expired - Fee Related
-
1994
- 1994-09-30 SG SG141194A patent/SG141194G/en unknown
- 1994-12-01 HK HK136694A patent/HK136694A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| HK136694A (en) | 1994-12-09 |
| EP0320192A3 (en) | 1990-07-25 |
| US4809428A (en) | 1989-03-07 |
| SG141194G (en) | 1995-03-17 |
| JP2783566B2 (en) | 1998-08-06 |
| EP0320192A2 (en) | 1989-06-14 |
| JPH021311A (en) | 1990-01-05 |
| DE3885420T2 (en) | 1994-05-11 |
| EP0320192B1 (en) | 1993-11-03 |
| DE3885420D1 (en) | 1993-12-09 |
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