CA1071511A - Silicon wafer polishing - Google Patents
Silicon wafer polishingInfo
- Publication number
- CA1071511A CA1071511A CA267,072A CA267072A CA1071511A CA 1071511 A CA1071511 A CA 1071511A CA 267072 A CA267072 A CA 267072A CA 1071511 A CA1071511 A CA 1071511A
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- CA
- Canada
- Prior art keywords
- polishing
- silicon
- composition
- therewith
- comprises applying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
SILICON WAFER POLISHING
Abstract of the Disclosure The polishing of monocrystalline silicon wafers with an aqueous composition of fine sized abrasive particles, a soluble alkali metal base such as sodium carbonate and an oxidizing agent such as sodium or potassium salt of dichloroiso-cyanuric acid (e.g. salts of halo-trizenetrione).
Abstract of the Disclosure The polishing of monocrystalline silicon wafers with an aqueous composition of fine sized abrasive particles, a soluble alkali metal base such as sodium carbonate and an oxidizing agent such as sodium or potassium salt of dichloroiso-cyanuric acid (e.g. salts of halo-trizenetrione).
Description
10,~~This invention relates to the polishing of 11 semiconductor planar substrales and more particularly j.............. .
12! to polishing compositions for silicon semiconductor 13 substrates at improved polishing rates and high degree 14 of perfection.
15 DescriptTon of the PriorlArt 16 Semiconductor devices such as integrated 17 mono1ithic circuits, diodes, passive devices, and the 18 llke, are formed by various additive techniques, such 19 as dlffusion and epitaxial growth; in the planar s~rfaces of semiconductor substrates. For such 21 semlconductor device fabrica-ion, polished stlicon 22 wafers, free of undesirable crystal defects and surface 23 imperfections is a basic requirement. Polishing and
12! to polishing compositions for silicon semiconductor 13 substrates at improved polishing rates and high degree 14 of perfection.
15 DescriptTon of the PriorlArt 16 Semiconductor devices such as integrated 17 mono1ithic circuits, diodes, passive devices, and the 18 llke, are formed by various additive techniques, such 19 as dlffusion and epitaxial growth; in the planar s~rfaces of semiconductor substrates. For such 21 semlconductor device fabrica-ion, polished stlicon 22 wafers, free of undesirable crystal defects and surface 23 imperfections is a basic requirement. Polishing and
2~ clean1ng of the wafers is normally the last process In preparation of the wafers for device fabrication.
~7~511 .
I Although the requirement for high degree 2 of polishing has heretofore existed in the semi-
~7~511 .
I Although the requirement for high degree 2 of polishing has heretofore existed in the semi-
3 conductor art, the h;gher levels of microminiaturiza-
4 . tion.of.d.eYice si~e, the perfection of surface quality of the polished wafer has become of paramount 6 importance in regard to featureless or surface fine-7 structure conditions down to an order of Angstrorn 8 units, planarity, unifor.mity and freedom of surface 9 irregularities and crystal damagc.
A review of the literature and other infor-11 mation indicates that a substantial portion of 12 commercially available silicon wafers are polished 13 with compositions comprised of silicon dioxide having 14 particle sizes in the colloidal range of 1~500 m~
(millimicrons) with particles suitable for polishing.
16 ranging in size from 10-150 m~ .. Properly sized 17 silicon dioxide compositions with nominal particle 18 sizes of 16 m~ are commercially available normally, 19 for convenience, in the form of sols and gels, such as the material marketed under the trademark "Syton"
21 by the Monsanto Com~any, "Ludox" (a silica sol~ by 22 DuPont and "Quso" (a microcrystalline silica) by 23 Philadelphia Quart~ Co. The above con-position, Syton, 24 will have a weight percent dispersion, in water, of silicon dioxide which may vary between 10 to 50 weight 26 percent, with particle sizeS having a mean diameter 27 f 30 millimicrons 1~7~5~L~
I ~irtually any type of polishing cloth, such 2 as synthetic leather, resin non-woven types, can be 3 . used with such a silicon dioxide polishing composition, 4 typical of which are Corofam and Blue Rodell~ Polishing may be effected in machines such as described in Goetz 6 et al. U. S. Patent No. 3,691,69II including modifica-7 tions thereof in accordance with the planetary conflg-8 uration of Goetz et al. shown in .the IBM Technical 9 Disc!osure Bulletin (eg. TDB), pp. 1760-61, Vol. 15, No. 6, November 1~72.
11 During polishing, wheel speeds may vary 12 from 40 to 200 rpm applied at pressures of 2-6 p5i-.
13 The slurry feed (eg. SiO2 polishing composition) is 14 usually continuous at a flow rate of not less than 10 cc per minute and the slurry may be recirculated.
16 The rate of stock removal, from t.l-e silicon wafers, 17 is approximately 0.75 mils per hour.
18- Although the foregoing produces polished i9 wafers having a high and acceptable degree of perfec-tion, the process is nevertheless relatively slow 21 with considerable time required to attain such a 22 degree of perfection. Attempts to accelerat~ such 23 polishing, as by increasing pressures or nature of .
24 abrasives (eg. size and/or hardness) can result in sub-surface damage which becomes evident in subsequent 26 device fabrication.
. . - , , ~Lo7~-5~
I Oth~r process and polishing compositions may also be found in U. S. Patents No. 2,7ll4,001, 3 No. 3,029,160, No. 3,071,1~55, No. 3,170,273, No.
~ 3,328,141~ No. 3,385,682, No. 3,429,o80, No. 3,738,881, No. 3,841,Q31 and No. 3,485,~o8.
6 SummarY of thc Inventiorl -7 It i5 an object of this invention to provide ~ a novel reagent composition for polishing silicon 9 semiconductor substrates to a high degree of perfec-t;on.
11 It is another object of this invention eo 12 provide a novel reagent composition for chemical/
13 mechanical polishing silicon wafers at enhanced polish-14 ing rates to high degrPe of perfection.
These and other objects are accomplished 16 in accordance with the broad aspects of this invention 17 by use of a novel polishing composition comprised of 18 an aqueous dispersion of colloidal sized polishing 19 abrasive particles (eg. 5 to 200 millimicrons) admixed with an alkali metal base, preferably the carbonates,.
21 and an oxidizing agent selected from the group consist 22 ing of sodium and potassium salts of halo derivatives ~ :
23 of isocyanuric acid, alternatively k'nown as the 24 corresponding salts of halo-trizenetriones, preFerably the correspondiny salts of dihaloisocyanuric acid.
_4_
A review of the literature and other infor-11 mation indicates that a substantial portion of 12 commercially available silicon wafers are polished 13 with compositions comprised of silicon dioxide having 14 particle sizes in the colloidal range of 1~500 m~
(millimicrons) with particles suitable for polishing.
16 ranging in size from 10-150 m~ .. Properly sized 17 silicon dioxide compositions with nominal particle 18 sizes of 16 m~ are commercially available normally, 19 for convenience, in the form of sols and gels, such as the material marketed under the trademark "Syton"
21 by the Monsanto Com~any, "Ludox" (a silica sol~ by 22 DuPont and "Quso" (a microcrystalline silica) by 23 Philadelphia Quart~ Co. The above con-position, Syton, 24 will have a weight percent dispersion, in water, of silicon dioxide which may vary between 10 to 50 weight 26 percent, with particle sizeS having a mean diameter 27 f 30 millimicrons 1~7~5~L~
I ~irtually any type of polishing cloth, such 2 as synthetic leather, resin non-woven types, can be 3 . used with such a silicon dioxide polishing composition, 4 typical of which are Corofam and Blue Rodell~ Polishing may be effected in machines such as described in Goetz 6 et al. U. S. Patent No. 3,691,69II including modifica-7 tions thereof in accordance with the planetary conflg-8 uration of Goetz et al. shown in .the IBM Technical 9 Disc!osure Bulletin (eg. TDB), pp. 1760-61, Vol. 15, No. 6, November 1~72.
11 During polishing, wheel speeds may vary 12 from 40 to 200 rpm applied at pressures of 2-6 p5i-.
13 The slurry feed (eg. SiO2 polishing composition) is 14 usually continuous at a flow rate of not less than 10 cc per minute and the slurry may be recirculated.
16 The rate of stock removal, from t.l-e silicon wafers, 17 is approximately 0.75 mils per hour.
18- Although the foregoing produces polished i9 wafers having a high and acceptable degree of perfec-tion, the process is nevertheless relatively slow 21 with considerable time required to attain such a 22 degree of perfection. Attempts to accelerat~ such 23 polishing, as by increasing pressures or nature of .
24 abrasives (eg. size and/or hardness) can result in sub-surface damage which becomes evident in subsequent 26 device fabrication.
. . - , , ~Lo7~-5~
I Oth~r process and polishing compositions may also be found in U. S. Patents No. 2,7ll4,001, 3 No. 3,029,160, No. 3,071,1~55, No. 3,170,273, No.
~ 3,328,141~ No. 3,385,682, No. 3,429,o80, No. 3,738,881, No. 3,841,Q31 and No. 3,485,~o8.
6 SummarY of thc Inventiorl -7 It i5 an object of this invention to provide ~ a novel reagent composition for polishing silicon 9 semiconductor substrates to a high degree of perfec-t;on.
11 It is another object of this invention eo 12 provide a novel reagent composition for chemical/
13 mechanical polishing silicon wafers at enhanced polish-14 ing rates to high degrPe of perfection.
These and other objects are accomplished 16 in accordance with the broad aspects of this invention 17 by use of a novel polishing composition comprised of 18 an aqueous dispersion of colloidal sized polishing 19 abrasive particles (eg. 5 to 200 millimicrons) admixed with an alkali metal base, preferably the carbonates,.
21 and an oxidizing agent selected from the group consist 22 ing of sodium and potassium salts of halo derivatives ~ :
23 of isocyanuric acid, alternatively k'nown as the 24 corresponding salts of halo-trizenetriones, preFerably the correspondiny salts of dihaloisocyanuric acid.
_4_
5~1-I Typical abrasives are cerium oxide, a1uminum 2 oxide, zirconium oxide, and the like, among which the 3 preferred abrasive is slllca (eg. silicon dioxide).
4 Preferably, the silicon substrates or wafers are polished with the compositions of this
4 Preferably, the silicon substrates or wafers are polished with the compositions of this
6 invention by tl1e free-polishing technique such as
7 il!ustrated in the aforesaid Goetz et al. patent and
8 TDB eublication. By this technique, the wafers are
9 placed in openings with circular carriers whicl1 are placed between two counter rotating polishing pads.
11 In turn, the periphery of the carrier is geared to 12 mesh between teeth of an independently rotating spindle 13 and gear teeth in a circumscribing periphery of the 14 polisher so as to impart planetary motion to the wafer carriers resulting in relat;ve motion of the carrier 16 and wafers between the rotating polishing pads. In 17 operation, the polishirlg slurry of this invention is fed 18 continuously to the surface of the polishing pads. The 19 completion of the polishing operation is followed by washing and removal of the wafers or substrates fro~
21 the polishing mechanism.
22 The foregoing and other objects, features 23 and advantages of this invention will be apparent from 24 the more particular description oF the preferred embodiments oF the invention as illustrated in the 26 accompa~,ing dr~in;s . ' , ' ,' ' ' ' .
L697~5~
I Brief Descrip~ion of_the Dra~ings 2 FIGURE 1 is a plot of the polishing rate of 3 monocrystalline silicon wafers, or substrates, in mils .
4 per hour as a functlon of the concentration of sodium carbonate in ~rams per liter, in the polishing com-6 positions o~ this invention.
7 FIGURE 2 is a plot of the polishing rate of 8 monocrystalline silicon wafers as a function of the pH
9 of various polishing compositions, including those of this invention.
11 Description of Preferred_Embodiments 12 It is to be understood that although the 13 polishing compositions of this invention have been 14 developed for and are described for the polishing of silicon substrates, such compositions can be 16 advantageously employed for the polishing of other 17 substrates and materials, parLicularly quartz an~
!8 the various glasses.
19 Increased polisl-in~ rates of silicon, as high as 5 mils/hour are obtained with the polishing composi-21 tion of the invention which, in the preferred form, 22 comprise aqueous dispersed silicon dioxide colloidal 23 size particles in admixture of a water soluble alkali 24 metal base, such as sodium hydroxide and preferably sodium carbonate, and either a sodium or potassium salt 26 of dihaloisocyanuric acid, also commonly known as 27 dihalo-i-trizenetrione salts. A typical composition .
.
~L~7~L5~1 1 in accordance with this invention will comprise a 2 silica (eg. SiO2) sol, s~dium carbonate and sodium 3 dichloroisocyanurate. With ratios of the carbonate 4 to thc dichloroisocyanurate in the range of about 0.5:1 to about 3.2:1, polishing rates for silicon can ~ be obtained of about 2 mils per hour to as high as 5 7 mils per hour.
8 The components of the polishing composition 9 can be readily prepared simply by mixing and normally in lots as low as 20 liters for convenience in com-11 mercial application. Preferably, the freshly prepared 12 compositions are utilized for polishing, and if 13 previously prepared compositions are to be used, they 14 should be stored in the absence of light which tends to decompose or coagulate the pol;shing slurry, via 16 the oxidizing agent.
17 The aqueous dispersion of silicon dioxide 18 can be conveniently employed in the form of silica 19 sols and silica gels having silicon dioxide particle sizes in the range of 1 to 500 millimicrons, in weight 21 percent concentrations of 10 to 50 weight percent. A
22 convenient source of the aqueous dispersion of the 23 silicon dioxide, as employed in all the examples 24 below, is the trademarked silica sol composi~ion "Syton HT-50" commercially available ~rom the Monsanto ,,, ~' , ' :' ': ' .
~7~5~
. .
1 Company. This Syton HT 50 has a silica content of 2 about 50 weight percent with maximum particle si~e of 3 40-45 millimicrons.
4 Any standard polishing equipment is appropriate for use with the polishing compositions of this inven-6 tionj as for example that described in the said Goetz 7 et al. U. S, patent. A particularly effective free- ' 8 polisher is that described in the aforesaid Goetz et al.
9 TDB publication. This free-polisher was employed with rotation of the top plate at 60 rpm, and counter-11 rotation of the bottom plate at 63 rpm. The ~op plate 12 pressure on the bottom plate was about 5.2 psi. The 13 polishing cloth employed with the bottom plate was )4 "Blue Rodeli" commercially available from Rodell Co.
of Wilmington, Delaware. The polishing cloth employed 16 with the top plate was commercially available "BncA~' 17 sold by the Process Research Company of Pennington, 18 New Jersey.
19 Twelve e~periments, each utilizing nine 2-1/4 inch diameter monocrystalline,silicon wafers of <100>
21 'crystallographic orientation and a resistivity of 2 ohm 22 cm were polished under identical conditions of the above 23 indicated plate rotationJ pressure and slurry flow of 2~ 520 - 10 ml/min. with the exception of the slurry composition. Eight experiments were carried out with 26 the compositlons of this invention, whereas four ~7~
I experiments were done by compositions not conforming 2 to the scope of this invention for purposes of comparison 3 of polishing rates. In each of the twelve examples 4 be10w, bright shiny wafers were obtained, after polish-ing, with featureless surfaces without any film or 6 surface contamination.
7 The following table sets forth various 8 examples of solution compositions at a constant slurry 9 flow rate of 520 - 10 ml/min. at 130 ~ 5F at the ~b~ve indic~ ed p d pm~ and ~ress.r~.
' ~ ~
. .~
g .
' . , ' ' ..
. ~ .
- ' ' ' . '- ' ' ' ~' ''.
~317~S~
c~ ~ ~:
E ~ rJ o ~ Ln r_ co ~> r~ r~ r~ n . T ,_ ,_ o ~- o a~ z o C l:h ~ _ O C . ~ .
._ _ ~1 0~J' 3 3 1~ CO ~
_ ~ O. . . . . . . . . . . C) O ~ O ~ C~ ~ O ~:~ O. O O o o _ V
, ~1 ~ -- C
. ' C~ . ' O
' . Z
c r CO O ~ Il~ ~ O ~ O 1 r u- O ~ 3 3 u~
u~ ---- .
't 3 .
' ' O c _ ._ 1~ E
. . ~ o , , .
' ' c ~I) ~
, O---- E I+
~ c~ O
.' --o ~
~ ~ . ' ' .. . .
I I ~n O~-- E
L ~ rs 0~ ~
r Ql o o O O O O O O O O O O
u c cJ o o o o o o o o o ~~ Cl ~ ~
f:~ N O . '.
i ._ ._ ~D ~ ~
~: ~ ~ . ' ~ :
.~ 0 , ' ' ~' .
:~ o Z ~ . . ' ' ..
O O I . , ,;: . .
. " ,' . , .
" , V- O ~ O O o O o o o IJ~ o 1~ ' O o O ~- O U~ O U~ o L~ I~ o ~ U~
O -- tO
- ~ O -~
O ~ ' "
-- O
=~ '" ' . ' , ' .
Jv. _ . . .
''' O c O
E~ u~ ~ ..
, ~
._ _, ' ' ~ . ~ . . , , -.`.... .
.
' . , ' , - .
" , -",~ O --- . 10 ._ .
.. . . . . . .
7~5~
i It is evident frorn tlle above tab1e that the 2 polishing rate is substantially high when a mixture 3 of colloidal SiO2, Na2C03 and Na-dichloroisocyanuric 4 acid (examples 3-10) is used and low if any component is eliminat~d eg. SiO2 - Na2C03 (examples 11 and 12) or 6 SiO2 - oxidizing agent (cxample 2) is used. It is also 7 interesting to note that even though pH of the slurry 8 is high (examples 11-12) when SiO2 - Na2C03 mixture is 9 wsed, the removal rate is considerably iow. On the other hand, even though pH is similar (examples 7, 8, 9, 10-) at high Na2C03 weight levels (examples 9-10), 12 the polishing rates are different. It is thus evident 13 that for the new polishing slurry composition, it is 14 the amount of Na2C03 in polishing mixture that is con-trolling and not pH. It may further be indicated that 16 all mixtures of Na2C03, I~a-dichloroisocyanuric acid -17 colloidal SiO2 etc. tend to achieve a pH of less than 18 10 (about 9.7) after standing for some time witllout 19 influencing the polishing rates. This further rein-forces the point that the variation in polishing rates 21 is due to the arnount of base ~nd not pH.
22 It is believed that the polishing mechanism 23 Is due to the rapid oxidation of silicon to SiO2 by the 24 polishing slurry component, followed by softening of SiO2 thus formed to give silica gel (Si (0II)4) which in 26 turn further absorbs the slurry cornponents and becomes 27 softer and is easily removed by the scrubbing action of . . , - ' .
- ~7~5~
.
1 the polishing slurry. The reaction mechanism is 2 believed to be as follows: .
O-Na 3 Nl IN~5t~ 2 Na2C03 ~ Si ~ 2 H20 0~ /~0 N . O Na.
CL // \ N-H
4. SlO2 ~ 2 NaHC03 + 2 NaCl ~ O , H
, SiOz ~2 ~~ Sl(~
6 The lowerin9 of polishing rates at higher 7 sodium carbonate concentrations can be attributed to 8 the formation of considerable amounts of NaC10 which 9 in turn coagulate colloidal SiO2 resulting in lower, ~' colloidal SiO2 amounts.in the slurry and hard suspended 11 particles,which can creaLe scratches on the sur~ace.
12 , It may be noted with respect to the polishing 13 compositions of this invention that they tend to 14 ; stabilize at.a pH of about 9.7 on standing for times as long as about two hours. This appears to be due 16 to the reaction of NaOH with the s~lica' particles of.
17 the polishing composition, to the extent permitted by 1~ the buffering action of NaHC03 which reduces the pH of 19 .the polishing composition to about 9.7. It ma~ be noted that although these pH stabilized compositions .
, ; ` :
~7~5~
. ~ .
1 are operative in this. invenLion, in practice Fre~hly 2 prepared polishing compositions are normally employed 3 ImmPd;ately for polishing of silicon wafers.
4 The foregoing polishing of silicon wafers was repeated (utilizing nine wafers per example) with 6 the exception of the composition chanyes note~ in the 7 table below.
, .
.. , . . ' . ' ' ' .
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- ' - ' " ' ' : :
'.
, -. .
' ' ' . ' ' ' . ' ~7~5i11 , v ,~
'~I G) E ~ ~ ~ co ~
c~ i~ o~ z a~ o ~ -- o, ~
O C V V
v ~ ._ . c - _ ~O 0 3 ~\ O ~ ~ C
o - a~ ~ o O O -- ~- E
v v~ . _ ~
3 ~ V
~- 0 0.
C ~ o L O O C~l i -- ~ .-- Ul ~,:
'' U~ _ _ _ ~`J ~ 1~ O--`
~-- E In O~
', o , .. ; . . ' V~
0 ~" ,_ . .
_ ~0 L O
~,_ ~ a.-3 ' O a) ~J
, U- L V~ o 1~ E L- 0 L
O --~ -- C~ ~ L
.-- E Ill O u~
~ o ~ .
_ V ,~ - , . . .
O ~
<o ~ . ..
.
.
.
O ~-- E
. ' .
01- ~
.n r C) O c a.) o a N O O
Z ~ . ' : \
, ~U - ' ' . . . .
E
?.o o .
i~
C
. V~ o .. ,~ ._ . .
O ~-- O ~ O -~ O o o o ., o ~ ~ _ ~" Z ~
Z ~
- _ o . ~ ,. . .
. . ~ ~ , . .
. , C~ C
_ o o E ~_~
_. ~ . .
. u~, .
~4 1~7~L51~
1 As can be seen, the foregoing shows that 2 the pH of the polishing compositions plays no 3 significant role in the polishing phenomena of thi 5 4 invention, whose objectives flow solely from the ~ ternary roles of the abrasive, base and oxidizing 6 components.
7 While the invention has been particularly 8 shown and described with reference to preferred 9 embodiments thereof, it will be understood by those skilled in the art that thc foregoing and otiler 11 changes in form and details may be made therein 12 without departing from the spirit and scopc of the 13 invention.
.. - . ~ .
.
.
.
'' ' ' ' . ~ ' . , .. ' . ' ' - .' . ' . ' ' ' ' ,' .
-~5-.
.
11 In turn, the periphery of the carrier is geared to 12 mesh between teeth of an independently rotating spindle 13 and gear teeth in a circumscribing periphery of the 14 polisher so as to impart planetary motion to the wafer carriers resulting in relat;ve motion of the carrier 16 and wafers between the rotating polishing pads. In 17 operation, the polishirlg slurry of this invention is fed 18 continuously to the surface of the polishing pads. The 19 completion of the polishing operation is followed by washing and removal of the wafers or substrates fro~
21 the polishing mechanism.
22 The foregoing and other objects, features 23 and advantages of this invention will be apparent from 24 the more particular description oF the preferred embodiments oF the invention as illustrated in the 26 accompa~,ing dr~in;s . ' , ' ,' ' ' ' .
L697~5~
I Brief Descrip~ion of_the Dra~ings 2 FIGURE 1 is a plot of the polishing rate of 3 monocrystalline silicon wafers, or substrates, in mils .
4 per hour as a functlon of the concentration of sodium carbonate in ~rams per liter, in the polishing com-6 positions o~ this invention.
7 FIGURE 2 is a plot of the polishing rate of 8 monocrystalline silicon wafers as a function of the pH
9 of various polishing compositions, including those of this invention.
11 Description of Preferred_Embodiments 12 It is to be understood that although the 13 polishing compositions of this invention have been 14 developed for and are described for the polishing of silicon substrates, such compositions can be 16 advantageously employed for the polishing of other 17 substrates and materials, parLicularly quartz an~
!8 the various glasses.
19 Increased polisl-in~ rates of silicon, as high as 5 mils/hour are obtained with the polishing composi-21 tion of the invention which, in the preferred form, 22 comprise aqueous dispersed silicon dioxide colloidal 23 size particles in admixture of a water soluble alkali 24 metal base, such as sodium hydroxide and preferably sodium carbonate, and either a sodium or potassium salt 26 of dihaloisocyanuric acid, also commonly known as 27 dihalo-i-trizenetrione salts. A typical composition .
.
~L~7~L5~1 1 in accordance with this invention will comprise a 2 silica (eg. SiO2) sol, s~dium carbonate and sodium 3 dichloroisocyanurate. With ratios of the carbonate 4 to thc dichloroisocyanurate in the range of about 0.5:1 to about 3.2:1, polishing rates for silicon can ~ be obtained of about 2 mils per hour to as high as 5 7 mils per hour.
8 The components of the polishing composition 9 can be readily prepared simply by mixing and normally in lots as low as 20 liters for convenience in com-11 mercial application. Preferably, the freshly prepared 12 compositions are utilized for polishing, and if 13 previously prepared compositions are to be used, they 14 should be stored in the absence of light which tends to decompose or coagulate the pol;shing slurry, via 16 the oxidizing agent.
17 The aqueous dispersion of silicon dioxide 18 can be conveniently employed in the form of silica 19 sols and silica gels having silicon dioxide particle sizes in the range of 1 to 500 millimicrons, in weight 21 percent concentrations of 10 to 50 weight percent. A
22 convenient source of the aqueous dispersion of the 23 silicon dioxide, as employed in all the examples 24 below, is the trademarked silica sol composi~ion "Syton HT-50" commercially available ~rom the Monsanto ,,, ~' , ' :' ': ' .
~7~5~
. .
1 Company. This Syton HT 50 has a silica content of 2 about 50 weight percent with maximum particle si~e of 3 40-45 millimicrons.
4 Any standard polishing equipment is appropriate for use with the polishing compositions of this inven-6 tionj as for example that described in the said Goetz 7 et al. U. S, patent. A particularly effective free- ' 8 polisher is that described in the aforesaid Goetz et al.
9 TDB publication. This free-polisher was employed with rotation of the top plate at 60 rpm, and counter-11 rotation of the bottom plate at 63 rpm. The ~op plate 12 pressure on the bottom plate was about 5.2 psi. The 13 polishing cloth employed with the bottom plate was )4 "Blue Rodeli" commercially available from Rodell Co.
of Wilmington, Delaware. The polishing cloth employed 16 with the top plate was commercially available "BncA~' 17 sold by the Process Research Company of Pennington, 18 New Jersey.
19 Twelve e~periments, each utilizing nine 2-1/4 inch diameter monocrystalline,silicon wafers of <100>
21 'crystallographic orientation and a resistivity of 2 ohm 22 cm were polished under identical conditions of the above 23 indicated plate rotationJ pressure and slurry flow of 2~ 520 - 10 ml/min. with the exception of the slurry composition. Eight experiments were carried out with 26 the compositlons of this invention, whereas four ~7~
I experiments were done by compositions not conforming 2 to the scope of this invention for purposes of comparison 3 of polishing rates. In each of the twelve examples 4 be10w, bright shiny wafers were obtained, after polish-ing, with featureless surfaces without any film or 6 surface contamination.
7 The following table sets forth various 8 examples of solution compositions at a constant slurry 9 flow rate of 520 - 10 ml/min. at 130 ~ 5F at the ~b~ve indic~ ed p d pm~ and ~ress.r~.
' ~ ~
. .~
g .
' . , ' ' ..
. ~ .
- ' ' ' . '- ' ' ' ~' ''.
~317~S~
c~ ~ ~:
E ~ rJ o ~ Ln r_ co ~> r~ r~ r~ n . T ,_ ,_ o ~- o a~ z o C l:h ~ _ O C . ~ .
._ _ ~1 0~J' 3 3 1~ CO ~
_ ~ O. . . . . . . . . . . C) O ~ O ~ C~ ~ O ~:~ O. O O o o _ V
, ~1 ~ -- C
. ' C~ . ' O
' . Z
c r CO O ~ Il~ ~ O ~ O 1 r u- O ~ 3 3 u~
u~ ---- .
't 3 .
' ' O c _ ._ 1~ E
. . ~ o , , .
' ' c ~I) ~
, O---- E I+
~ c~ O
.' --o ~
~ ~ . ' ' .. . .
I I ~n O~-- E
L ~ rs 0~ ~
r Ql o o O O O O O O O O O O
u c cJ o o o o o o o o o ~~ Cl ~ ~
f:~ N O . '.
i ._ ._ ~D ~ ~
~: ~ ~ . ' ~ :
.~ 0 , ' ' ~' .
:~ o Z ~ . . ' ' ..
O O I . , ,;: . .
. " ,' . , .
" , V- O ~ O O o O o o o IJ~ o 1~ ' O o O ~- O U~ O U~ o L~ I~ o ~ U~
O -- tO
- ~ O -~
O ~ ' "
-- O
=~ '" ' . ' , ' .
Jv. _ . . .
''' O c O
E~ u~ ~ ..
, ~
._ _, ' ' ~ . ~ . . , , -.`.... .
.
' . , ' , - .
" , -",~ O --- . 10 ._ .
.. . . . . . .
7~5~
i It is evident frorn tlle above tab1e that the 2 polishing rate is substantially high when a mixture 3 of colloidal SiO2, Na2C03 and Na-dichloroisocyanuric 4 acid (examples 3-10) is used and low if any component is eliminat~d eg. SiO2 - Na2C03 (examples 11 and 12) or 6 SiO2 - oxidizing agent (cxample 2) is used. It is also 7 interesting to note that even though pH of the slurry 8 is high (examples 11-12) when SiO2 - Na2C03 mixture is 9 wsed, the removal rate is considerably iow. On the other hand, even though pH is similar (examples 7, 8, 9, 10-) at high Na2C03 weight levels (examples 9-10), 12 the polishing rates are different. It is thus evident 13 that for the new polishing slurry composition, it is 14 the amount of Na2C03 in polishing mixture that is con-trolling and not pH. It may further be indicated that 16 all mixtures of Na2C03, I~a-dichloroisocyanuric acid -17 colloidal SiO2 etc. tend to achieve a pH of less than 18 10 (about 9.7) after standing for some time witllout 19 influencing the polishing rates. This further rein-forces the point that the variation in polishing rates 21 is due to the arnount of base ~nd not pH.
22 It is believed that the polishing mechanism 23 Is due to the rapid oxidation of silicon to SiO2 by the 24 polishing slurry component, followed by softening of SiO2 thus formed to give silica gel (Si (0II)4) which in 26 turn further absorbs the slurry cornponents and becomes 27 softer and is easily removed by the scrubbing action of . . , - ' .
- ~7~5~
.
1 the polishing slurry. The reaction mechanism is 2 believed to be as follows: .
O-Na 3 Nl IN~5t~ 2 Na2C03 ~ Si ~ 2 H20 0~ /~0 N . O Na.
CL // \ N-H
4. SlO2 ~ 2 NaHC03 + 2 NaCl ~ O , H
, SiOz ~2 ~~ Sl(~
6 The lowerin9 of polishing rates at higher 7 sodium carbonate concentrations can be attributed to 8 the formation of considerable amounts of NaC10 which 9 in turn coagulate colloidal SiO2 resulting in lower, ~' colloidal SiO2 amounts.in the slurry and hard suspended 11 particles,which can creaLe scratches on the sur~ace.
12 , It may be noted with respect to the polishing 13 compositions of this invention that they tend to 14 ; stabilize at.a pH of about 9.7 on standing for times as long as about two hours. This appears to be due 16 to the reaction of NaOH with the s~lica' particles of.
17 the polishing composition, to the extent permitted by 1~ the buffering action of NaHC03 which reduces the pH of 19 .the polishing composition to about 9.7. It ma~ be noted that although these pH stabilized compositions .
, ; ` :
~7~5~
. ~ .
1 are operative in this. invenLion, in practice Fre~hly 2 prepared polishing compositions are normally employed 3 ImmPd;ately for polishing of silicon wafers.
4 The foregoing polishing of silicon wafers was repeated (utilizing nine wafers per example) with 6 the exception of the composition chanyes note~ in the 7 table below.
, .
.. , . . ' . ' ' ' .
~-', -- .
- ' - ' " ' ' : :
'.
, -. .
' ' ' . ' ' ' . ' ~7~5i11 , v ,~
'~I G) E ~ ~ ~ co ~
c~ i~ o~ z a~ o ~ -- o, ~
O C V V
v ~ ._ . c - _ ~O 0 3 ~\ O ~ ~ C
o - a~ ~ o O O -- ~- E
v v~ . _ ~
3 ~ V
~- 0 0.
C ~ o L O O C~l i -- ~ .-- Ul ~,:
'' U~ _ _ _ ~`J ~ 1~ O--`
~-- E In O~
', o , .. ; . . ' V~
0 ~" ,_ . .
_ ~0 L O
~,_ ~ a.-3 ' O a) ~J
, U- L V~ o 1~ E L- 0 L
O --~ -- C~ ~ L
.-- E Ill O u~
~ o ~ .
_ V ,~ - , . . .
O ~
<o ~ . ..
.
.
.
O ~-- E
. ' .
01- ~
.n r C) O c a.) o a N O O
Z ~ . ' : \
, ~U - ' ' . . . .
E
?.o o .
i~
C
. V~ o .. ,~ ._ . .
O ~-- O ~ O -~ O o o o ., o ~ ~ _ ~" Z ~
Z ~
- _ o . ~ ,. . .
. . ~ ~ , . .
. , C~ C
_ o o E ~_~
_. ~ . .
. u~, .
~4 1~7~L51~
1 As can be seen, the foregoing shows that 2 the pH of the polishing compositions plays no 3 significant role in the polishing phenomena of thi 5 4 invention, whose objectives flow solely from the ~ ternary roles of the abrasive, base and oxidizing 6 components.
7 While the invention has been particularly 8 shown and described with reference to preferred 9 embodiments thereof, it will be understood by those skilled in the art that thc foregoing and otiler 11 changes in form and details may be made therein 12 without departing from the spirit and scopc of the 13 invention.
.. - . ~ .
.
.
.
'' ' ' ' . ~ ' . , .. ' . ' ' - .' . ' . ' ' ' ' ,' .
-~5-.
.
Claims (16)
1. A reagent composition for polishing substrates comprising an aqueous mixture of silicon dioxide particles in a size range of about 5 to about 200 millimicrons, a soluble alkali metal hase and an oxidizing agent selected from the group consisting of sodium and potassium salts of dihaloisocyanuric acid, wherein the ratio of said base to said oxidizing agent is in the range of about 0.5:l to about 3.2:1, and with the ratio of silicon particles to said base in the range of about 8.5:1 to about 55.6:1.
2. The composition of claim 1 wherein said base is an alkali metal carbonate.
3.. The composition of claim 2 wherein said carbonate is a sod-ium salt thereof and said oxidizing agent is selected from the group consisting of potassium and sodium salts of dichloroisocy-anurlc acld.
4. The composition of claim 3 wherein the ratio of said carbon-ate to said oxidizing agent is in the range of 0.5:1 to 3.2:1.
5. The composition of elaim 1 wherein said particles are sel-ected from the group consisting of silica sols and silica gels.
6. The composition of claim 2 wherein said particles are sel-ected from the group consisting of silica sols and silica gels.
7. The composition of claim 3 wherein said particles are sel-ected from the group consisting of silica sol5 and silica gels.
8. The composition of claim 4 wherein said particles axe sel-ected from the group consisting of silica sols and silica gels.
9. A process for polishing crystalline silicon which comprises applying to a surface of said silicon a polishing composition of claim 1, and polishing said silicon therewith.
10. A process for polishing crystalline silicon which comprises applying to a surface of said silicon a polishing composition of claim 2, and polishing said silicon therewith.
11. A process for polishing crystalline silicon which comprises applying to a surface of said silicon a polishing composition of claim 3, and polishing said silicon therewith.
12. A process for polishing crystalline silicon which comprises applying to a surface of said silicon a polishing composition of claim 4, and polishing said silicon therewith.
13. A process for polishing crystalline silicon which comprises applying to a surface of said silicon a polishing composition of claim 5, and polishing said silicon therewith.
14. A process for polishing crystalline silicon which comprises applying to a surface of said silicon a polishing composition of claim 6, and polishing said silicon therewith.
15. A process for polishing crystalline silicon which comprises applying to a surface of said silicon a polishing composition of claim 7, and polishing said silicon therewith.
16. A process for polishing crystalline silicon which comprises applying to a surface of said silicon a polishing composition of claim 8, and polishing said silicon therewith.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/638,018 US4057939A (en) | 1975-12-05 | 1975-12-05 | Silicon wafer polishing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1071511A true CA1071511A (en) | 1980-02-12 |
Family
ID=24558310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA267,072A Expired CA1071511A (en) | 1975-12-05 | 1976-12-03 | Silicon wafer polishing |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4057939A (en) |
| JP (1) | JPS5269558A (en) |
| CA (1) | CA1071511A (en) |
| DE (1) | DE2653901C2 (en) |
| FR (1) | FR2333847A1 (en) |
| GB (1) | GB1537128A (en) |
| IT (1) | IT1124778B (en) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53119371U (en) * | 1977-03-01 | 1978-09-22 | ||
| US4260396A (en) * | 1978-01-16 | 1981-04-07 | W. R. Grace & Co. | Compositions for polishing silicon and germanium |
| JPS5935429A (en) * | 1982-08-12 | 1984-02-27 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | Method of producing semiconductor wafer |
| DE3237235C2 (en) * | 1982-10-07 | 1986-07-10 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Process for polishing III-V semiconductor surfaces |
| US4435247A (en) | 1983-03-10 | 1984-03-06 | International Business Machines Corporation | Method for polishing titanium carbide |
| US4588421A (en) * | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
| US4671851A (en) * | 1985-10-28 | 1987-06-09 | International Business Machines Corporation | Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique |
| US4944836A (en) * | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
| US4735679A (en) * | 1987-03-30 | 1988-04-05 | International Business Machines Corporation | Method of improving silicon-on-insulator uniformity |
| JPH01187930A (en) * | 1988-01-22 | 1989-07-27 | Nippon Telegr & Teleph Corp <Ntt> | Abrasive powder and abrasive method |
| US5226930A (en) * | 1988-06-03 | 1993-07-13 | Monsanto Japan, Ltd. | Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same |
| EP0348757B1 (en) * | 1988-06-28 | 1995-01-04 | Mitsubishi Materials Silicon Corporation | Method for polishing a silicon wafer |
| EP0363100A3 (en) * | 1988-10-02 | 1990-05-23 | Canon Kabushiki Kaisha | Selective polishing method |
| JP2577090B2 (en) * | 1989-08-07 | 1997-01-29 | キヤノン株式会社 | Method for forming crystalline semiconductor film |
| US5139571A (en) * | 1991-04-24 | 1992-08-18 | Motorola, Inc. | Non-contaminating wafer polishing slurry |
| US5376222A (en) * | 1991-09-04 | 1994-12-27 | Fujitsu Limited | Polishing method for polycrystalline silicon |
| US5462568A (en) * | 1992-03-13 | 1995-10-31 | Ronald C. Wiand | Stone polishing composition |
| US6503414B1 (en) | 1992-04-14 | 2003-01-07 | Byelocorp Scientific, Inc. | Magnetorheological polishing devices and methods |
| US5449313A (en) * | 1992-04-14 | 1995-09-12 | Byelocorp Scientific, Inc. | Magnetorheological polishing devices and methods |
| US5264010A (en) * | 1992-04-27 | 1993-11-23 | Rodel, Inc. | Compositions and methods for polishing and planarizing surfaces |
| US5459104A (en) * | 1993-01-18 | 1995-10-17 | Mitsubishi Materials Silicon Corporation | Process for production of semiconductor substrate |
| US5318927A (en) * | 1993-04-29 | 1994-06-07 | Micron Semiconductor, Inc. | Methods of chemical-mechanical polishing insulating inorganic metal oxide materials |
| BE1007281A3 (en) * | 1993-07-12 | 1995-05-09 | Philips Electronics Nv | METHOD FOR POLISHING OF A SURFACE OF COPPER OR MAINLY COPPER CONTAINING ALLOY, SOLENOID manufacturable USING THE METHOD, RÖNTGENSTRALINGCOLLIMEREND ELEMENT AND X-RADIATION REFLECTIVE ELEMENT BOTH WITH AN UNDER THE METHOD OF POLISHED SURFACE AND POLISH SUITABLE FOR APPLICATION IN THE PROCESS. |
| US5556323A (en) * | 1994-06-30 | 1996-09-17 | Siecor Corporation | Method of polishing optical connectors |
| US5536202A (en) * | 1994-07-27 | 1996-07-16 | Texas Instruments Incorporated | Semiconductor substrate conditioning head having a plurality of geometries formed in a surface thereof for pad conditioning during chemical-mechanical polish |
| TW274625B (en) * | 1994-09-30 | 1996-04-21 | Hitachi Seisakusyo Kk | |
| US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US5860848A (en) * | 1995-06-01 | 1999-01-19 | Rodel, Inc. | Polishing silicon wafers with improved polishing slurries |
| US5795212A (en) * | 1995-10-16 | 1998-08-18 | Byelocorp Scientific, Inc. | Deterministic magnetorheological finishing |
| EP0786504A3 (en) * | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Polishing composition |
| US5743785A (en) * | 1996-04-04 | 1998-04-28 | Us Conec Ltd. | Polishing method and apparatus for preferentially etching a ferrule assembly and ferrule assembly produced thereby |
| US5769691A (en) * | 1996-06-14 | 1998-06-23 | Speedfam Corp | Methods and apparatus for the chemical mechanical planarization of electronic devices |
| KR100253083B1 (en) * | 1997-03-15 | 2000-04-15 | 윤종용 | Wax cleaning composition for removing electron wax of semiconductor wafer and method for removing electron wax using the same |
| US5891205A (en) * | 1997-08-14 | 1999-04-06 | Ekc Technology, Inc. | Chemical mechanical polishing composition |
| JP4163785B2 (en) * | 1998-04-24 | 2008-10-08 | スピードファム株式会社 | Polishing composition and polishing method |
| JPH11349925A (en) * | 1998-06-05 | 1999-12-21 | Fujimi Inc | Composition for edge polishing |
| US6723143B2 (en) * | 1998-06-11 | 2004-04-20 | Honeywell International Inc. | Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials |
| JP2000080352A (en) * | 1998-06-11 | 2000-03-21 | Allied Signal Inc | Aqueous sol of metal oxide as slurry for polishing low dielectric material |
| JP3810588B2 (en) * | 1998-06-22 | 2006-08-16 | 株式会社フジミインコーポレーテッド | Polishing composition |
| KR20000006595A (en) * | 1998-09-22 | 2000-02-07 | 유현식 | Method for manufacturing metal dielectric slurry for cmp of semiconductor devices |
| US6270395B1 (en) * | 1998-09-24 | 2001-08-07 | Alliedsignal, Inc. | Oxidizing polishing slurries for low dielectric constant materials |
| US6106368A (en) * | 1998-11-18 | 2000-08-22 | Siecor Operations, Llc | Polishing method for preferentially etching a ferrule and ferrule assembly |
| KR20000055131A (en) * | 1999-02-03 | 2000-09-05 | 유현식 | Method for preparing metaloxide slurry for semiconductor element cmp |
| JP2001118815A (en) * | 1999-10-22 | 2001-04-27 | Speedfam Co Ltd | Polishing composition for polishing semiconductor wafer edge, and polishing machining method |
| AU1457101A (en) * | 1999-10-28 | 2001-05-08 | Cabot Microelectronics Corporation | Chemical mechanical polishing compositions and systems |
| US6319096B1 (en) | 1999-11-15 | 2001-11-20 | Cabot Corporation | Composition and method for planarizing surfaces |
| US6293848B1 (en) | 1999-11-15 | 2001-09-25 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
| US6527817B1 (en) | 1999-11-15 | 2003-03-04 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
| JP4792802B2 (en) * | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Surface treatment method of group III nitride crystal |
| DE102005045338B4 (en) * | 2005-09-22 | 2009-04-02 | Siltronic Ag | Epitaxial silicon wafer and process for producing epitaxially coated silicon wafers |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2744001A (en) * | 1950-09-08 | 1956-05-01 | Rare Earths Inc | Polishing material and method of making same |
| US3029160A (en) * | 1957-10-21 | 1962-04-10 | Carborundum Co | Manufacture of abrasive coated products |
| US3071455A (en) * | 1959-04-22 | 1963-01-01 | Univis Lens Co | Polishing material |
| US3170273A (en) * | 1963-01-10 | 1965-02-23 | Monsanto Co | Process for polishing semiconductor materials |
| US3385682A (en) * | 1965-04-29 | 1968-05-28 | Sprague Electric Co | Method and reagent for surface polishing |
| US3328141A (en) * | 1966-02-28 | 1967-06-27 | Tizon Chemical Corp | Process for polishing crystalline silicon |
| US3429080A (en) * | 1966-05-02 | 1969-02-25 | Tizon Chem Corp | Composition for polishing crystalline silicon and germanium and process |
| US3552071A (en) * | 1967-10-30 | 1971-01-05 | Tizon Chemical Corp | Process for polishing crystalline silicon |
| US3485608A (en) * | 1968-01-02 | 1969-12-23 | Texas Instruments Inc | Slurry for polishing silicon slices |
| US3715842A (en) * | 1970-07-02 | 1973-02-13 | Tizon Chem Corp | Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces |
| US3841031A (en) * | 1970-10-21 | 1974-10-15 | Monsanto Co | Process for polishing thin elements |
| US3691694A (en) * | 1970-11-02 | 1972-09-19 | Ibm | Wafer polishing machine |
| BE789090A (en) * | 1971-09-22 | 1973-01-15 | Western Electric Co | SEMICONDUCTOR ATTACK METHOD AND SOLUTION |
| US3807979A (en) * | 1972-05-08 | 1974-04-30 | Philadelphia Quartz Co | Quaternary ammonium silicate for polishing silicon metal |
| DE2247067C3 (en) * | 1972-09-26 | 1979-08-09 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Use of a polishing suspension for the stain-free polishing of semiconductor surfaces |
| JPS5084988A (en) * | 1973-11-26 | 1975-07-09 | ||
| US3922393A (en) * | 1974-07-02 | 1975-11-25 | Du Pont | Process for polishing silicon and germanium semiconductor materials |
-
1975
- 1975-12-05 US US05/638,018 patent/US4057939A/en not_active Expired - Lifetime
-
1976
- 1976-10-11 FR FR7631440A patent/FR2333847A1/en active Granted
- 1976-10-26 GB GB44527/76A patent/GB1537128A/en not_active Expired
- 1976-11-11 JP JP51134743A patent/JPS5269558A/en active Granted
- 1976-11-19 IT IT29528/76A patent/IT1124778B/en active
- 1976-11-27 DE DE2653901A patent/DE2653901C2/en not_active Expired
- 1976-12-03 CA CA267,072A patent/CA1071511A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT1124778B (en) | 1986-05-14 |
| DE2653901C2 (en) | 1986-08-14 |
| JPS5320379B2 (en) | 1978-06-26 |
| US4057939A (en) | 1977-11-15 |
| DE2653901A1 (en) | 1977-06-08 |
| FR2333847A1 (en) | 1977-07-01 |
| FR2333847B1 (en) | 1978-12-22 |
| JPS5269558A (en) | 1977-06-09 |
| GB1537128A (en) | 1978-12-29 |
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