CA1045428A - Method for producing aluminum holographic masters - Google Patents
Method for producing aluminum holographic mastersInfo
- Publication number
- CA1045428A CA1045428A CA225,126A CA225126A CA1045428A CA 1045428 A CA1045428 A CA 1045428A CA 225126 A CA225126 A CA 225126A CA 1045428 A CA1045428 A CA 1045428A
- Authority
- CA
- Canada
- Prior art keywords
- photoresist
- aluminum
- surface relief
- pattern
- interference pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 35
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000007743 anodising Methods 0.000 claims abstract description 8
- 238000002048 anodisation reaction Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000000992 sputter etching Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000003362 replicative effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/02—Details of features involved during the holographic process; Replication of holograms without interference recording
- G03H1/0276—Replicating a master hologram without interference recording
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/001—Phase modulating patterns, e.g. refractive index patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/02—Details of features involved during the holographic process; Replication of holograms without interference recording
- G03H1/024—Hologram nature or properties
- G03H1/0244—Surface relief holograms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/02—Details of features involved during the holographic process; Replication of holograms without interference recording
- G03H1/0276—Replicating a master hologram without interference recording
- G03H2001/0292—Replicating a master hologram without interference recording by masking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/02—Details of features involved during the holographic process; Replication of holograms without interference recording
- G03H1/0276—Replicating a master hologram without interference recording
- G03H2001/0296—Formation of the master hologram
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H2260/00—Recording materials or recording processes
- G03H2260/14—Photoresist
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H2260/00—Recording materials or recording processes
- G03H2260/50—Reactivity or recording processes
- G03H2260/63—Indirect etching, e.g. lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H2270/00—Substrate bearing the hologram
- G03H2270/10—Composition
- G03H2270/13—Metallic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H2270/00—Substrate bearing the hologram
- G03H2270/52—Integrated surface relief hologram without forming layer
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Holo Graphy (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- ing And Chemical Polishing (AREA)
Abstract
METHOD FOR PRODUCING ALUMINUM HOLOGRAPHIC MASTERS
ABSTRACT
A master for replicating surface relief holo-grams is prepared by depositing a photoresist on the surface of an amorphous aluminum substrate, exposing the photorosist to an interference pattern, developing the photoresist to record the interference pattern as a surface relief pattern, transferring the surface relief pattern onto the surface of the aluminum substrate, removing the remaining photoresist, and anodizing the aluminum surface. This method is particularly useful in making masters for surface relief focused image holograms whose surface dimensions are in the order of one micron or less.
ABSTRACT
A master for replicating surface relief holo-grams is prepared by depositing a photoresist on the surface of an amorphous aluminum substrate, exposing the photorosist to an interference pattern, developing the photoresist to record the interference pattern as a surface relief pattern, transferring the surface relief pattern onto the surface of the aluminum substrate, removing the remaining photoresist, and anodizing the aluminum surface. This method is particularly useful in making masters for surface relief focused image holograms whose surface dimensions are in the order of one micron or less.
Description
RCA 66,822 ~04S4Z8 1 The present invention is directed to producing a surface relief pattern. More particularly, the present invention is directed to a method for producing an improved master surface relief pattern in a substrate.
The conventional technique for forming a master of a surface relief hologram involves depositing a film of metal or hardenable material on the surface of a photoresist on which the surface relief hologram is recorded, separating the film from the photoresist surface, and backing the film with a hard material for support. U. S. Patent 3,565,978 describes such a technique.
Since the resolution for the typical surface relief hologram is on the order of 1 micron, great care must be exercised in separating the film from the photoresist to prevent damage to the surface relief pattern embossed on the film.
To be useful for embossing a holographic surface relief pattern it is necessary that the master material be hard and well adherent, have an extremely fine structure, e.g., an amorphous material, and be easily etchable. Most hard metals recrystallize very easily when deposited as a thin film on an amorphous substrate. Since the crystallite size of most recrys-tallized metals is generally of the order required for resolution of a holographic surface relief pattern it is not practical to use such metals for replication of a surface relief pattern. A soft, amorphous metal is not a good master material since it can only be used for a limited number of pressings. Thus, it is desirable to find a hard, easily etchable master material which does
The conventional technique for forming a master of a surface relief hologram involves depositing a film of metal or hardenable material on the surface of a photoresist on which the surface relief hologram is recorded, separating the film from the photoresist surface, and backing the film with a hard material for support. U. S. Patent 3,565,978 describes such a technique.
Since the resolution for the typical surface relief hologram is on the order of 1 micron, great care must be exercised in separating the film from the photoresist to prevent damage to the surface relief pattern embossed on the film.
To be useful for embossing a holographic surface relief pattern it is necessary that the master material be hard and well adherent, have an extremely fine structure, e.g., an amorphous material, and be easily etchable. Most hard metals recrystallize very easily when deposited as a thin film on an amorphous substrate. Since the crystallite size of most recrys-tallized metals is generally of the order required for resolution of a holographic surface relief pattern it is not practical to use such metals for replication of a surface relief pattern. A soft, amorphous metal is not a good master material since it can only be used for a limited number of pressings. Thus, it is desirable to find a hard, easily etchable master material which does
-2-RCA 66,822 1 not require the care and number of processing steps used in conventional master forming techniques.
A surface relief pattern may be formed by the steps of: (a) coating a photoresist on a substrate; (b) exposing the photoresist to an interference pattern; (c) developing the interference pattern into a surface relief pattern which records the interference pattern on the surface of the photoresist; (d) transferring the surface relief pattern into the surface substrate; and (e) removing the remaining photoresist.
According to aipreferred embodiment of the invention, the substrate is aluminum, and there is performed the further step of anodizing the aluminum substrate.
In the following detailed description, reference is made to the drawing which is attached hereto and in which:
FIGURES 1-3, inclusive, illustrate the sequence for forming an anodized aluminum master for replicating a hologram.
Aluminum can be easily evaported at a very high rate and, therefore, can be deposited in an amorphous form with very small particle size. Also aluminum is easily etchable with weak acids or bases compatible with photoresist development techniques. The major disadvantage with aluminum is its softness, i.e., a 2 to 2.9 hardness on Moh's scale.
The present invention utilizes aluminum's superior qualities, i.e., etchability and amorphousness, and overcomes its major disadvantage, i.e., softness, by anodization of the aluminum surface after the surface relief pattern has been formed in the surface of the 1~54~ RCA 66,822 1 aluminum. The relief pattern etched into the aluminum remains essentially unchanged apart from a small thick-ness variation due to volume changes during anodization which can be allowed for before the anodization stage.
The steps for forming a master for replicating a surface relief hologram in an aluminum surface, as illustrated by FIGURES 1-3, are:
1) Referring now to F~ URE 1, depositing a photoresist 10, e.g., a Shiple 350 positive photoresist available from the Shipley Co., on top of an aluminum substrate 12 which itself may have been coated on a substrate 14;
2) Exposing the photoresist 10 to an interference pattern, e.g., a focused image interference pattern;
A surface relief pattern may be formed by the steps of: (a) coating a photoresist on a substrate; (b) exposing the photoresist to an interference pattern; (c) developing the interference pattern into a surface relief pattern which records the interference pattern on the surface of the photoresist; (d) transferring the surface relief pattern into the surface substrate; and (e) removing the remaining photoresist.
According to aipreferred embodiment of the invention, the substrate is aluminum, and there is performed the further step of anodizing the aluminum substrate.
In the following detailed description, reference is made to the drawing which is attached hereto and in which:
FIGURES 1-3, inclusive, illustrate the sequence for forming an anodized aluminum master for replicating a hologram.
Aluminum can be easily evaported at a very high rate and, therefore, can be deposited in an amorphous form with very small particle size. Also aluminum is easily etchable with weak acids or bases compatible with photoresist development techniques. The major disadvantage with aluminum is its softness, i.e., a 2 to 2.9 hardness on Moh's scale.
The present invention utilizes aluminum's superior qualities, i.e., etchability and amorphousness, and overcomes its major disadvantage, i.e., softness, by anodization of the aluminum surface after the surface relief pattern has been formed in the surface of the 1~54~ RCA 66,822 1 aluminum. The relief pattern etched into the aluminum remains essentially unchanged apart from a small thick-ness variation due to volume changes during anodization which can be allowed for before the anodization stage.
The steps for forming a master for replicating a surface relief hologram in an aluminum surface, as illustrated by FIGURES 1-3, are:
1) Referring now to F~ URE 1, depositing a photoresist 10, e.g., a Shiple 350 positive photoresist available from the Shipley Co., on top of an aluminum substrate 12 which itself may have been coated on a substrate 14;
2) Exposing the photoresist 10 to an interference pattern, e.g., a focused image interference pattern;
3) Referring now to FIGURE 2, developing the interference pattern into a surface relief pattern 16 recorded on the photoresist 10;
4) Referring now to FIGURE 3, transferring the surface relief pattern 16 recorded on the photoresist onto the surface 18 of the aluminum 12;
5) Removing any remaining photoresist 10; and
6) Anodizing the aluminum surface 18.
The surface relief pattern may be linearly etched into the aluminum surface by sputter-etching as described in U.S. Patent 3,733,258, issued May 15, 1973 or by chemical etching as described in copending Canadian application "Generation of Permanent Holograms and Relief Patterns in Durable Media" by M.T. Gale and J. Kane serial No. 225,136 filed April 22, 1975. Also, a pulse width modulated surface relief structure may be developed RCA 66,822 1 in the aluminum surface using techniques described in copending Canadian application "Method for Producing Pulse Width Modulated Focused Image Holograms" by M.T. Gale and A.H. Firester serial No. 225,137 filed April 22, 1975.
The aluminum may be etched in a solution of 90 ml H3PO4, 5 ml HNO3 and 10 ml H20 at 40C. Contact in this solution for about 30 seconds with slight agitation is sufficient to etch a suitable two-level pulse width modulated diffraction grating in an aluminum surface.
It is important that the aluminum not be etched completely through to the underlying substrate. Otherwise, the pattern cannot be anodized by a wet chemical method because there is no metal left on the lower side of the pattern to carry the anodizing current. The aluminum also can be anodized thermally or in an oxygen plasma.
The present invention may be utilized in the following manner; however, it is understood that the invention is not limited to the details described therein.
a 1 ~m thick film of aluminum is evaporated onto a glass plate. The aluminum film is then coated with a 4000 A thick film of Shipley AZ 1350 photoresist a~ailable from the Shipley Co. The photoresist is baked at about 75C. for about 1 hour. The photoresist is exposed to a holographic interference pattern from a He-Cd laser. The wavelength of the laser is 4416 A; the optimum exposure is about 0.1 joule/cm2. The photoresist is developed in a Shipley AZ 303 developer available from the Shipley Co. at a 1:8 dilution in distilled water until I~(A fi6 #~2 I all ~hc resist is removcd. Thc total dcvelopmcnt timc is al)out :3 to 4 minutcs. Thc aluminum lilm is ct~llc~
l~y the Shiplcy AZ 303 devclopeI at a rate compaIal)lc to thc rate at which the developer developed i.e.~ rem~ved, thc photoresist since the Shipley AZ ~03 developer is based upon a sodium hydroxide solution which will etch aluminum. The surface relief pattern on the photo-resist is linearly transferred onto the alumin-lm surface as a rcsult of this technique. The plate is rillsed in water and dried. The etched aluminum film on the glass platc is now connected to the anode of a 12V dc power supply. The cathode is connected to a lead plate. Both plates al-C immersed in a beaker containing 0.05 M
sulfllric acid and the anodization carried cut at room temperature with slight agitation. After about 1 1/2 minutes the aluminum surface relief pattern is anodized and after about 5 minutes the unexposed aluminum is anodized.
The anodized aluminum surface has a hardness oI about 5.5 on the Moh's scale and can be used to directly rcplicate the surface relief pattern into n thermoplastic such as polyvinyl chloride. In the case of polyvinyl chloIide the optimum embossing temperatllra is about 90 C.
~0
The surface relief pattern may be linearly etched into the aluminum surface by sputter-etching as described in U.S. Patent 3,733,258, issued May 15, 1973 or by chemical etching as described in copending Canadian application "Generation of Permanent Holograms and Relief Patterns in Durable Media" by M.T. Gale and J. Kane serial No. 225,136 filed April 22, 1975. Also, a pulse width modulated surface relief structure may be developed RCA 66,822 1 in the aluminum surface using techniques described in copending Canadian application "Method for Producing Pulse Width Modulated Focused Image Holograms" by M.T. Gale and A.H. Firester serial No. 225,137 filed April 22, 1975.
The aluminum may be etched in a solution of 90 ml H3PO4, 5 ml HNO3 and 10 ml H20 at 40C. Contact in this solution for about 30 seconds with slight agitation is sufficient to etch a suitable two-level pulse width modulated diffraction grating in an aluminum surface.
It is important that the aluminum not be etched completely through to the underlying substrate. Otherwise, the pattern cannot be anodized by a wet chemical method because there is no metal left on the lower side of the pattern to carry the anodizing current. The aluminum also can be anodized thermally or in an oxygen plasma.
The present invention may be utilized in the following manner; however, it is understood that the invention is not limited to the details described therein.
a 1 ~m thick film of aluminum is evaporated onto a glass plate. The aluminum film is then coated with a 4000 A thick film of Shipley AZ 1350 photoresist a~ailable from the Shipley Co. The photoresist is baked at about 75C. for about 1 hour. The photoresist is exposed to a holographic interference pattern from a He-Cd laser. The wavelength of the laser is 4416 A; the optimum exposure is about 0.1 joule/cm2. The photoresist is developed in a Shipley AZ 303 developer available from the Shipley Co. at a 1:8 dilution in distilled water until I~(A fi6 #~2 I all ~hc resist is removcd. Thc total dcvelopmcnt timc is al)out :3 to 4 minutcs. Thc aluminum lilm is ct~llc~
l~y the Shiplcy AZ 303 devclopeI at a rate compaIal)lc to thc rate at which the developer developed i.e.~ rem~ved, thc photoresist since the Shipley AZ ~03 developer is based upon a sodium hydroxide solution which will etch aluminum. The surface relief pattern on the photo-resist is linearly transferred onto the alumin-lm surface as a rcsult of this technique. The plate is rillsed in water and dried. The etched aluminum film on the glass platc is now connected to the anode of a 12V dc power supply. The cathode is connected to a lead plate. Both plates al-C immersed in a beaker containing 0.05 M
sulfllric acid and the anodization carried cut at room temperature with slight agitation. After about 1 1/2 minutes the aluminum surface relief pattern is anodized and after about 5 minutes the unexposed aluminum is anodized.
The anodized aluminum surface has a hardness oI about 5.5 on the Moh's scale and can be used to directly rcplicate the surface relief pattern into n thermoplastic such as polyvinyl chloride. In the case of polyvinyl chloIide the optimum embossing temperatllra is about 90 C.
~0
Claims (8)
1. A method for forming a surface relief pattern comprising the steps of: (a) coating a photoresist on a substrate; (b) exposing the photoresist to an interference pattern; (c) developing a surface relief pattern which records the interference pattern on the surface of said photoresist; (d) transferring the interference pattern onto the surface of the substrate; and (e) removing the remaining photoresist;
wherein:
the substrate is aluminum; and there is included the further step of anodizing the aluminum substrate.
wherein:
the substrate is aluminum; and there is included the further step of anodizing the aluminum substrate.
2. The method of claim 1 wherein the surface and depth dimensions of the surface relief pattern are about one micron or less.
3. The method of claim 1 wherein said transfer is made by sputter-etching.
4. The method of claim 1 wherein the transfer is made by chemical etching.
5. The method of claim 1 wherein the interference pattern is a focused image interference pattern.
6. The method of claim 1 wherein the anodizing step is effected by electrochemical anodization.
7. The method of claim 1 wherein the anodizing step is effected by thermal anodization.
8. The method of claim 1 wherein the anodizing step takes place in an oxygen plasma.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US472293A US3875026A (en) | 1974-05-22 | 1974-05-22 | Method for producing aluminum holographic masters |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1045428A true CA1045428A (en) | 1979-01-02 |
Family
ID=23874914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA225,126A Expired CA1045428A (en) | 1974-05-22 | 1975-04-22 | Method for producing aluminum holographic masters |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3875026A (en) |
| JP (1) | JPS51338A (en) |
| BE (1) | BE829260A (en) |
| CA (1) | CA1045428A (en) |
| CH (1) | CH611436A5 (en) |
| DE (1) | DE2522548C3 (en) |
| FR (1) | FR2272421B1 (en) |
| GB (1) | GB1508660A (en) |
| IT (1) | IT1037347B (en) |
| NL (1) | NL7505950A (en) |
| SE (1) | SE410235B (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4045318A (en) * | 1976-07-30 | 1977-08-30 | Rca Corporation | Method of transferring a surface relief pattern from a poly(olefin sulfone) layer to a metal layer |
| JPS5962888A (en) * | 1982-10-04 | 1984-04-10 | Ricoh Co Ltd | Production of master hologram |
| EP0365031A3 (en) * | 1988-10-21 | 1991-04-03 | Toppan Printing Co., Ltd. | Hologram stamper, method of manufacturing the same, and method of manufacturing hologram |
| AU8282691A (en) * | 1990-07-20 | 1992-02-18 | McGrew, Steven P. | Embossing tool |
| JPH05273901A (en) * | 1992-03-27 | 1993-10-22 | Fuji Photo Optical Co Ltd | Method for dupricating reflection type hologram |
| US5604081A (en) * | 1992-08-14 | 1997-02-18 | Siemens Aktiengesellschaft | Method for producing a surface structure with reliefs |
| ES2076117B1 (en) * | 1993-10-06 | 1998-02-16 | Clemente Carmen Escandell | METHOD FOR MANUFACTURING CURVED PARTS, EVEN WIRED, OF WOOD, INSTALLATION TO CARRY IT OUT AND THE RESULTING STRUCTURE. |
| US6060220A (en) * | 1995-07-10 | 2000-05-09 | The Board Of Trustees Of The Leland Stanford Junior University | Method for producing an optical information carrier having a variable relief structure |
| US7654580B2 (en) * | 1995-11-29 | 2010-02-02 | Graphic Security Systems Corporation | Self-authenticating documents with printed or embossed hidden images |
| JP2920164B2 (en) * | 1997-01-17 | 1999-07-19 | サイマー，インコーポレーテッド | Reflective overcoat for replica gratings |
| US20040003638A1 (en) * | 1997-12-12 | 2004-01-08 | Schaefer Mark W. | Transfer of holographic images into metal sporting and fitness products |
| US7094502B2 (en) * | 1997-12-12 | 2006-08-22 | Alcon Inc. | Methods for transferring holographic images into metal surfaces |
| US5881444A (en) * | 1997-12-12 | 1999-03-16 | Aluminum Company Of America | Techniques for transferring holograms into metal surfaces |
| RU2228854C1 (en) * | 2002-10-23 | 2004-05-20 | Любомирский Андрей Виленович | Method for decorative processing of metals |
| US7674573B2 (en) * | 2006-08-08 | 2010-03-09 | Canon Kabushiki Kaisha | Method for manufacturing layered periodic structures |
| SG189354A1 (en) | 2010-10-11 | 2013-05-31 | Graphic Security Systems Corp | Method for constructing a composite image incorporating a hidden authentication image |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3290233A (en) * | 1963-10-22 | 1966-12-06 | Contemporary Res Inc | Vapor deposition process |
| US3585113A (en) * | 1965-12-23 | 1971-06-15 | Rca Corp | Process for fabricating replicating masters |
| US3666638A (en) * | 1970-04-21 | 1972-05-30 | Sidney Levine | Process for anodizing aluminum materials |
| US3733258A (en) * | 1971-02-03 | 1973-05-15 | Rca Corp | Sputter-etching technique for recording holograms or other fine-detail relief patterns in hard durable materials |
-
1974
- 1974-05-22 US US472293A patent/US3875026A/en not_active Expired - Lifetime
-
1975
- 1975-04-17 IT IT22462/75A patent/IT1037347B/en active
- 1975-04-22 CA CA225,126A patent/CA1045428A/en not_active Expired
- 1975-05-02 GB GB18552/75A patent/GB1508660A/en not_active Expired
- 1975-05-15 JP JP50058482A patent/JPS51338A/en active Granted
- 1975-05-20 BE BE156508A patent/BE829260A/en unknown
- 1975-05-21 SE SE7505781A patent/SE410235B/en unknown
- 1975-05-21 DE DE2522548A patent/DE2522548C3/en not_active Expired
- 1975-05-21 NL NL7505950A patent/NL7505950A/en not_active Application Discontinuation
- 1975-05-22 FR FR7515997A patent/FR2272421B1/fr not_active Expired
- 1975-05-22 CH CH655775A patent/CH611436A5/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2522548B2 (en) | 1978-09-14 |
| JPS5339778B2 (en) | 1978-10-23 |
| BE829260A (en) | 1975-09-15 |
| FR2272421A1 (en) | 1975-12-19 |
| GB1508660A (en) | 1978-04-26 |
| SE7505781L (en) | 1975-11-24 |
| FR2272421B1 (en) | 1978-09-08 |
| CH611436A5 (en) | 1979-05-31 |
| NL7505950A (en) | 1975-11-25 |
| IT1037347B (en) | 1979-11-10 |
| JPS51338A (en) | 1976-01-06 |
| SE410235B (en) | 1979-10-01 |
| US3875026A (en) | 1975-04-01 |
| AU8124975A (en) | 1976-11-18 |
| DE2522548A1 (en) | 1975-12-04 |
| DE2522548C3 (en) | 1979-05-03 |
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